Multilayer Patents (Class 310/364)
  • Patent number: 6657366
    Abstract: A surface acoustic wave element includes multilayer electrodes having much higher electric power durability compared to conventional surface acoustic wave elements. The multilayer electrodes are prepared by forming, on a piezoelectric substrate, a Ti base electrode film that improves the orientation characteristics of the multilayer electrodes, an Al-type electrode film, an electrode film having a diffusive material that can easily diffuse into the grain boundary of the Al electrode film, and then an Al electrode film, in this order.
    Type: Grant
    Filed: September 22, 2001
    Date of Patent: December 2, 2003
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Masanobu Watanabe, Kazuhiro Inoue
  • Patent number: 6620287
    Abstract: A method of manufacturing a fiber assembly, the method comprising: (a) providing a plurality of layers, each layer comprising sintered fibers of piezoelectric material aligned substantially parallel; (b) laminating the plurality of layers; and (c) applying a matrix material to the laminated layers to affix the layers and form a fiber assembly.
    Type: Grant
    Filed: April 12, 2001
    Date of Patent: September 16, 2003
    Inventor: Richard B. Cass
  • Publication number: 20030168624
    Abstract: A piezoelectric ceramic material having the molar composition Pb(1+c)−x−(3/2a)−1/2(x·b)A1xA2a (Zry(1−x−b−x·z)Ti(1−y)(1−x·b−x·w))(B1bB2zB3w)xO3 is described
    Type: Application
    Filed: January 9, 2003
    Publication date: September 11, 2003
    Inventors: Marianne Hammer, Marc Kuehlein, Horst Boeder
  • Publication number: 20030155844
    Abstract: A surface acoustic wave (SAW) device comprises a piezoelectric substrate, at least one alloy layer made of aluminum (Al) and copper (Cu), at least one oxide layer, and at least one metal layer made of a metal other than Al, wherein the alloy layer, oxide layer, and metal layers are laminated one upon another.
    Type: Application
    Filed: September 26, 2002
    Publication date: August 21, 2003
    Inventor: Kenichi Anasako
  • Patent number: 6604266
    Abstract: A method for manufacturing a piezoelectric component in which a resonating portion on a piezoelectric substrate is provided with a deposit that is sensitive to radiation in a range of wavelengths from 350 to 2000 nm so as to have portions thereof trimmed away to form indentations therein without burning the deposit to avoid generating heat that is injurious to the piezoelectric component and substrate. A laser beam in the frequency range of 350 to 2000 nm is then caused to impinge on the deposit to cause the formation of trimmed indentations without substrate damaging heat in a controlled manner to adjust the resonance frequency of the piezoelectric component.
    Type: Grant
    Filed: June 27, 2000
    Date of Patent: August 12, 2003
    Assignee: TDK Corporation
    Inventors: Seiichi Tajima, Takahito Kiriyama
  • Publication number: 20030137223
    Abstract: A method of bonding a piezoelectric element and an electrode, including the steps of forming a first coating of a material selected from the group consisting of Au, Al, Zn, Cu, and Sn on a bonding surface of the piezoelectric element, and forming a second coating of a material selected from the group consisting of Au, Al, Zn, Cu, and Sn on a bonding surface of the electrode. The combination of the materials of the first and second coatings is preferably Au/Au, Au/Al, Zn/Cu, or Sn/Cu. The method further includes the step of bringing the first and second coatings into close contact with each other and heating them under pressure to form a metallic bond or intermetallic compound between the first and second coatings, thereby bonding the piezoelectric element and the electrode.
    Type: Application
    Filed: January 21, 2003
    Publication date: July 24, 2003
    Applicant: Fujitsu Limited
    Inventors: Masayuki Kitajima, Yutaka Noda, Seiichi Shimoura, Toru Okada, Masanao Fujii, Kenji Iketaki, Hidehiko Kobayashi, Masakazu Takesue, Keiichi Yamamoto, Hisao Tanaka
  • Patent number: 6580198
    Abstract: A surface acoustic wave device includes a piezoelectric substrate having Al or Al alloy electrodes formed on a surface of the substrate, a metal oxide film provided on the substrate and the electrodes. The metal oxide film is formed by a process including depositing a metal thin film having a thickness sufficiently thin so that the deposited metal thin film is discontinuous including voids, and oxidizing the discontinuous metal thin film, and the metal oxide film includes a continuous portion without voids covering the electrodes.
    Type: Grant
    Filed: June 4, 2001
    Date of Patent: June 17, 2003
    Assignee: TDK Corporation
    Inventors: Masahiro Nakano, Michiyuki Nakazawa, Katsuo Sato
  • Patent number: 6570300
    Abstract: A bending transducer has a piezoelectret carried on a substrate of electrically insulating material. An electrically conductive coating, such as a foil, a grid foil, a grid mesh, or mutually parallel strips, connects the inner electrode of the piezoelectret to the substrate and forms electrical contact with the inner electrode at a number of points. The bending transducer is particularly suited for driving a drafting, weaving or knitting machine in the textile industry.
    Type: Grant
    Filed: November 23, 1998
    Date of Patent: May 27, 2003
    Assignee: Siemens Aktiengesellschaft
    Inventors: Michael Riedel, Hans-Jürgen Sestak
  • Patent number: 6552475
    Abstract: A surface acoustic wave device includes a surface acoustic wave substrate having two IDT electrodes including wiring electrode portions made of aluminum disposed thereon. First, second and third metal films are laminated on each of the wiring electrode portions. The first metal film has superior bondability to aluminum, and the third metal film has superior bondability to bumps. In addition, the second metal film has an ability to suppress the diffusion of the metal defining the first metal film.
    Type: Grant
    Filed: June 27, 2001
    Date of Patent: April 22, 2003
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Yoshitsugu Hori, Yuji Kimura, Kazunobu Shimoe, Shigeto Taga, Toshiyuki Fuyutsume
  • Patent number: 6548943
    Abstract: A method of producing a BAW device with reduced spurious resonance, wherein the device comprises a top electrode, a bottom electrode and a piezoelectric layer therebetween. A frame-like structure is formed on top of the top electrode for suppressing the spurious resonances. The frame-like structure is produced in a self-aligning fashion in that the frame-like structure is used to define the top electrode area. Furthermore, it is preferred that the frame-like structure is made of a different material from the top electrode. The frame-like structure is caused to fuse with the contacting part of the top electrode to form an alloy. An etching mask is then used to cover at least part of the frame-like structure and the entire top electrode surrounded by the frame-like structure for etching. An etching medium is used to remove the unreacted portion of the top electrode outside the frame-like structure.
    Type: Grant
    Filed: April 12, 2001
    Date of Patent: April 15, 2003
    Assignee: Nokia Mobile Phones Ltd.
    Inventors: Jyrki Kaitila, Juha Ellä
  • Patent number: 6548942
    Abstract: An acoustic reflector (48) is applied over a thin-film piezoelectric resonator (41, 61) which is supported on a semiconductor or semiconductor-compatible substrate (42, 62) of a microelectronic device (40, 60), enabling an encapsulant (49) to be applied over the reflector-covered resonator without acoustically damping the resonator. In one embodiment, alternating high and low acoustic impedance layers (51, 53 . . . 55) of one-quarter wavelength thicknesses constructively reflect the resonating wavelength to make an encapsulant in the form of an inexpensive plastic molding compound appear as a “clamping” surface to a resonator (41) peripherally supported over an opening (43) on a silicon substrate (42). In another embodiment, an encapsulant- and reflector-covered resonator (61) is mechanically supported above a second reflector (68) which eliminates the need for peripheral support, making substrate (68) also appear as a clamping surface.
    Type: Grant
    Filed: May 15, 2000
    Date of Patent: April 15, 2003
    Assignee: Texas Instruments Incorporated
    Inventor: Carl M. Panasik
  • Patent number: 6545388
    Abstract: A surface acoustic wave device includes interdigital transducer (IDT) electrode and reflectors disposed on a piezoelectric substrate. Each of the IDT electrode and the reflectors has a multi-layer film structure including at least one layer (high specific gravity metal component containing layer) including as a major component a metal with a specific gravity of at least about 15 and having a film-thickness of at least about 10 nm, and at least one layer (low specific gravity metal component containing layer) including as a major component a metal with a specific gravity of up to about 10 and a volume resistivity as a bulk value (at about 20° C.) of up to about 10×10−8 &OHgr;·M, and having a film-thickness of at least about 10 nm.
    Type: Grant
    Filed: July 17, 2001
    Date of Patent: April 8, 2003
    Assignee: Murata Manufacturing Co., Ltd.
    Inventor: Takashi Iwamoto
  • Patent number: 6545395
    Abstract: A tube-shaped piezoelectric conversion element and a method of fabricating a tube-shaped piezoelectric conversion element are provided. The piezoelectric conversion element is formed either with two electroded piezoelectric sheet elements (two-layer type) rolled up in a tube-shaped member or with a single piezoelectric sheet element (single-layer type) electroded on two opposing surfaces and folded near its center and rolled up in a tube shaped member. A non-electrode surface portion without electrode material disposed thereon is provided on at least one electroded surface of at least one piezoelectric sheet element at an end of the piezoelectric sheet element in a direction intersecting a tube-axis direction. At lease one non-electrode surface portion may also be provided on a piezoelectric sheet element in a region encompassing the fold of single-layer type device. Short circuiting between electrode layers is thereby substantially avoided at ends of the piezoelectric sheet elements or in the fold region.
    Type: Grant
    Filed: February 2, 2001
    Date of Patent: April 8, 2003
    Assignee: Minolta Co., Ltd.
    Inventors: Naoki Matsui, Hiroji Katsuragi
  • Patent number: 6541898
    Abstract: A method of bonding a piezoelectric element and an electrode, including the steps of forming a first coating of a material selected from the group consisting of Au, Al, Zn, Cu, and Sn on a bonding surface of the piezoelectric element, and forming a second coating of a material selected from the group consisting of Au, Al, Zn, Cu, and Sn on a bonding surface of the electrode. The combination of the materials of the first and second coatings is preferably Au/Au, Au/Al, Zn/Cu, or Sn/Cu. The method further includes the step of bringing the first and second coatings into close contact with each other and heating them under pressure to form a metallic bond or intermetallic compound between the first and second coatings, thereby bonding the piezoelectric element and the electrode.
    Type: Grant
    Filed: March 30, 2001
    Date of Patent: April 1, 2003
    Assignee: Fujitsu Limited
    Inventors: Masayuki Kitajima, Yutaka Noda, Seiichi Shimoura, Toru Okada, Masanao Fujii, Kenji Iketaki, Hidehiko Kobayashi, Masakazu Takesue, Keiichi Yamamoto, Hisao Tanaka
  • Patent number: 6515558
    Abstract: A filter and a method for fabricating a filter comprising a thin film bulk acoustic wave resonator (FBAR), the FBAR including a plurality of layers of different materials deposited on top of each other and oh top of a substrate, the FBAR including a piezolayer sandwiched between a top electrode on the side of the piezolayer facing away from the substrate, and a bottom electrode on the side of the piezolayer facing the substrate, the FBAR further including an acoustic mirror made from a number of layers of different materials selected to provide in combination high reflectivity of sound energy, the method comprising the step of forming the bottom electrode from a material having a small acoustic impedance.
    Type: Grant
    Filed: November 6, 2000
    Date of Patent: February 4, 2003
    Assignee: Nokia Mobile Phones Ltd
    Inventor: Markku Antero Ylilammi
  • Patent number: 6515402
    Abstract: The invention relates to an array of ultrasound transducers which each comprise a substrate (1), a membrane (2), a first electrode (4), a piezoelectric layer (5), and a second electrode (6), wherein the substrate (1) comprises at least one opening (3) which adjoins the membrane (2) at one side, while the piezoelectric layer (5) has a high piezoelectric coupling coefficient k and is textured. The invention further relates to an ultrasound transducer and to a method of manufacturing an array of ultrasound transducers.
    Type: Grant
    Filed: January 24, 2001
    Date of Patent: February 4, 2003
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Mareike Klee, Tilman Schlenker, Olaf Dannappel, Hans-Peter Loebl, Georg Schmitz, John Fraser
  • Publication number: 20030020376
    Abstract: A surface acoustic wave device includes a surface acoustic wave element, a packaging case, and a packaging electrode. The surface acoustic wave element has a piezoelectric substrate, an interdigital transducer, an electrode pad, an intermediate electrode, an upper electrode, and a bump electrode. The intermediate electrode is preferably made of NiCr including about 30 weight percent of Cr. The electrode pad and upper electrode are made of Al. The bump electrode is press-bonded to the packaging electrode with an ultrasonic wave or heat applied to the bump electrode. The resulting surface acoustic wave device has excellent characteristics and the surface acoustic wave element is not removed or peeled from the packaging case during a drop test.
    Type: Application
    Filed: July 26, 2002
    Publication date: January 30, 2003
    Inventors: Kenji Sakaguchi, Masanobu Watanabe, Mitsushi Takatori
  • Patent number: 6507140
    Abstract: A piezoelectric actuator, for example for actuating a mechanical component, is proposed, which has a multilayered structure of piezoelectric layers and internal electrodes (2, 3) disposed between them. As a conductive surface, a first external electrode (6) is affixed to a respective side surface and is contacted by the respective internal electrodes (2, 3), and a second net-like or woven cloth-like external electrode (7) is disposed on the first external electrode (6). In the regions of the piezoelectric layers, which have respective internal electrodes (2, 3) that are respectively contacted on opposite sides from one another, there is a passive zone (10) without an internal electrode layer. The ceramic piezoelectric material—at least in the passive zone (10)—and the material of the second external electrode (7) have almost the same thermal expansion coefficient, by means of which the influence of mechanical stresses in the piezoelectric actuator can be reduced.
    Type: Grant
    Filed: April 18, 2001
    Date of Patent: January 14, 2003
    Assignee: Robert Bosch GmbH
    Inventors: Rudolf Heinz, Alexander Hedrich
  • Publication number: 20030006863
    Abstract: A surface acoustic wave device includes a surface acoustic wave element and a sealing member for sealing the surface acoustic wave element. The surface acoustic wave element has a piezoelectric substrate and an electrode provided on the piezoelectric substrate. The sealing ember is made of a resin or glass. The electrode has an electrode layer made of Al or an Al alloy and includes crystals having a twin structure.
    Type: Application
    Filed: June 25, 2002
    Publication date: January 9, 2003
    Inventor: Kazuhiro Inoue
  • Patent number: 6486591
    Abstract: A surface acoustic wave device comprising a substrate having a piezoelectric function on a surface thereof, and an electrode film having a four-layer structure comprising, from underneath, a first layer comprising Ti, a second layer comprising Al or an Al alloy, a third layer comprising an intermetallic compound, a silicide or a CuAl2, and a fourth layer comprising Al or an Al alloy on the substrate.
    Type: Grant
    Filed: June 21, 2001
    Date of Patent: November 26, 2002
    Assignees: Fujitsu Media Devices Limited, Fujitsu Limited
    Inventor: Tokihiro Nishihara
  • Patent number: 6484119
    Abstract: There is provided an input device which is small, has good productivity, is inexpensive, and can be surface-mounted. In an input device of the present invention, a plurality of terminals of a metal material connected to deflection detecting elements are connected in a substrate portion of an operation member, and the terminal allows the input device to be surface-mounted on a print board. It is thus possible to provide the input device which is inexpensive and small without using a conventional, large flexible substrate.
    Type: Grant
    Filed: May 17, 2001
    Date of Patent: November 19, 2002
    Assignee: Alps Electric Co., Ltd.
    Inventors: Kazuo Kaneo, Toshio Ogawa, Katsuhiko Tochihara, Ryoichi Maeda, Hirofumi Okumura
  • Publication number: 20020158552
    Abstract: A laminated piezo-electric device comprising a pole-like laminate formed by alternately laminating piezo-electric layers and electrode layers in the direction of height, and a pair of outer electrode plates formed on the different side surfaces of said pole-like laminate, said two electrode layers neighboring each other with said the piezo-electric layer sandwiched therebetween being electrically connected at their side surfaces to the outer electrode plates which are different from each other, wherein flexible protruded electrically conducting terminals are provided on the side surfaces of said pole-like laminate on where the outer electrodes are arranged, said flexible protruded electrically conducting terminals extending along the side surfaces of the electrode layers and are capable of following the stretching and contraction of said pole-like laminate in the direction of height thereof, and the electrode layers being joined to said outer electrode plates via said protruded electrically conducting termina
    Type: Application
    Filed: February 25, 2002
    Publication date: October 31, 2002
    Inventors: Shigenobu Nakamura, Koki Ashida
  • Patent number: 6472954
    Abstract: In an array of acoustic resonators, the effective coupling coefficient of first and second filters are individually tailored in order to achieve desired frequency responses. In a duplexer embodiment, the effective coupling coefficient of a transmit band-pass filter is lower than the effective coupling coefficient of a receive band-pass filter of the same duplexer. In one embodiment, the tailoring of the coefficients is achieved by varying the ratio of the thickness of a piezoelectric layer to the total thickness of electrode layers. For example, the total thickness of the electrode layers of the transmit filter may be in the range of 1.2 to 2.8 times the total thickness of the electrode layers of the receive filter. In another embodiment, the coefficient tailoring is achieved by forming a capacitor in parallel with an acoustic resonator within the filter for which the effective coupling coefficient is to be degraded.
    Type: Grant
    Filed: April 23, 2001
    Date of Patent: October 29, 2002
    Assignee: Agilent Technologies, Inc.
    Inventors: Richard C. Ruby, Paul Bradley, Domingo Figueredo, John D. Larson, III, Yury Oshmyansky
  • Publication number: 20020149300
    Abstract: A method of producing a bulk acoustic wave device with reduced spurious resonance, wherein the device comprises a top electrode, a bottom electrode and a piezoelectric layer therebetween. A frame-like structure is formed on top of the top electrode for tuning the device by suppressing the spurious resonances. The frame-like structure is produced in a self-aligning fashion in that the frame-like structure is used to define the top electrode area. Furthermore, it is preferred that the frame-like structure is made of a different material from the top electrode. The frame-like structure is caused to fuse with the contacting part of the top electrode to form an alloy. An etching mask is then used to cover at least part of the frame-like structure and the entire top electrode surrounded by the frame-like structure for etching. An etching medium is used to remove the unreacted portion of the top electrode outside the frame-like structure.
    Type: Application
    Filed: April 12, 2001
    Publication date: October 17, 2002
    Inventors: Jyrki Kaitila, Juha Ella
  • Publication number: 20020140321
    Abstract: An electroactive bender actuator includes one or more electroactive layers disposed at least in part between pairs of spaced electrode layers. At least a portion of the outer surface of the actuator is coated with a coating material in order to enhance the performance of the actuator, reduce the likelihood of electrical shorting between the electrode layers and improve wear resistance. The coating may be applied to the actuator by a vapor deposition, spraying or dipping process. Masking may be used to leave a selected area of the actuator outer surface uncoated.
    Type: Application
    Filed: March 27, 2001
    Publication date: October 3, 2002
    Inventor: Larry G. Waterfield
  • Patent number: 6452311
    Abstract: The invention provides a piezoelectric device having a structure which resists impact from the exterior and which can enhance electrical conductance between an electrode side of a package base and a piezoelectric resonator element. A piezoelectric device having a structure in which a piezoelectric resonator element is bonded to electrodes provided on a package base, includes underlying exposed electrodes as mounting electrodes which are provided on the package base and on which the piezoelectric resonator element is mounted; and gold-plated electrodes which are provided on the package base and to which a driving voltage is carried via conduction paths; in which the underlying exposed electrodes and the gold-plated electrodes are connected to each other with conductive adhesives provided therebetween, and the piezoelectric resonator element is bonded to the underlying exposed electrodes with silicone-based conductive adhesives provided therebetween.
    Type: Grant
    Filed: August 21, 2001
    Date of Patent: September 17, 2002
    Assignee: Seiko Epson Corporation
    Inventor: Satoshi Serizawa
  • Patent number: 6452312
    Abstract: This invention provides a piezoelectric laminate body that limits, to a minimum, the difference of the quantity of displacement occurring in the boundary between an electrode center portion of a unit laminate body and its alternate electrode portions upon the application of an electric field, by improving a laminate structure of alternate electrode structure type unit laminate bodies. Each piezoelectric device sheet 11a of the unit laminate bodies 10a constituting this piezoelectric laminate body integrally includes a device sheet portion 11c and each lug portion 11d, 11f, and is made of a piezoelectric ceramic material. An electrode layer 11b is so formed as to extend to the surface of the device sheet portion 11c and the surface of the lug portion 11e. Among the laminate sheets 11, the electrode layer 11b of a lower laminate sheet 11 overlaps with the back of an upper laminate sheet 11.
    Type: Grant
    Filed: August 17, 2000
    Date of Patent: September 17, 2002
    Assignees: Denso Corporation, Nippon Soken, Inc.
    Inventors: Kenichi Hanaki, Eturo Yasuda, Naochika Nunogaki
  • Publication number: 20020089266
    Abstract: In the case of external electrodes on piezoceramic multilayer actuators that are applied in a conventional manner to the multilayer actuators, severe tensile stresses act on the insulating region underneath the basic metallization during operation. Since said insulation region forms a homogeneous unit together with the basic metallization and the joining layer, the latter breaks down when the tensile strength of the weakest member is exceeded and cracks are formed. The cracks extending in an uncontrolled manner through the insulating region are very critical since they reduce the insulation spacing and considerably increase the probability of an actuator failure due to flashovers.
    Type: Application
    Filed: November 1, 2001
    Publication date: July 11, 2002
    Inventors: Rainer Bindig, Hans-Jurgen Schreiner
  • Patent number: 6417603
    Abstract: Disclosed is a piezoelectric transformer provided with node point recognition patterns for visually indicating respective node points, at which external electrical connection of input and output electrodes is made, thereby allowing the external electrical connection of the input and output electrodes to be easily achieved in a manual wire soldering process, while allowing the wire soldering process to be automatically carried out irrespective of the size of the piezoelectric transformer. The piezoelectric transformer, which includes a piezoelectric member, an input electrode, an output electrode, and a ground electrode, the electrodes being printed on the piezoelectric member, further includes a plurality of node point recognition patterns extending radially about the center of each of the electrodes while being spaced apart from the center of the electrode by a desired radial distance.
    Type: Grant
    Filed: December 11, 2001
    Date of Patent: July 9, 2002
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Jong-Sun Kim, Nak-Cheol Sung
  • Publication number: 20020074904
    Abstract: A surface acoustic wave element includes multilayer electrodes having much higher electric power durability compared to conventional surface acoustic wave elements. The multilayer electrodes are prepared by forming, on a piezoelectric substrate, a Ti base electrode film that improves the orientation characteristics of the multilayer electrodes, an Al-type electrode film, an electrode film having a diffusive material that can easily diffuse into the grain boundary of the Al electrode film, and then an Al electrode film, in this order.
    Type: Application
    Filed: September 22, 2001
    Publication date: June 20, 2002
    Inventors: Masanobu Watanabe, Kazuhiro Inoue
  • Patent number: 6407486
    Abstract: An object of the invention is to provide a SAW device having an electrode film on a lithium tantalate substrate having a cut angle approximate to 36 degree rotated Y cut, the electrode film including an aluminum single crystal film having improved power durability. The SAW device has interdigital electrodes on a substrate. The substrate is constructed of a 38 to 44 degree rotated Y cut lithium tantalate single crystal, each interdigital electrode includes a titanium film and an aluminum film formed thereon, and the aluminum film is a single crystal film which develops only spots on selected area electron diffraction analysis.
    Type: Grant
    Filed: October 26, 2000
    Date of Patent: June 18, 2002
    Assignee: TDK Corporation
    Inventors: Noritoshi Kimura, Masahiro Nakano, Katsuo Sato
  • Patent number: 6404110
    Abstract: A surface acoustic wave element includes a surface acoustic wave substrate, an interdigital transducer electrode provided on the surface acoustic wave substrate and a lead electrode provided on the surface acoustic wave substrate. The lead electrode is connected to the interdigital transducer electrode. The surface acoustic wave element further includes a bump electrode provided on a portion of the lead electrodes. The bump electrode includes a first electrode structure and a second electrode structure. The first electrode structure has a top surface and is arranged in contact with the lead electrode, and the second electrode structure covers a portion of the top surface of the first electrode structure such that the remaining portion of the top surface of the first electrode structure is exposed along an entire periphery of the top surface of the first electrode structure.
    Type: Grant
    Filed: May 8, 1998
    Date of Patent: June 11, 2002
    Assignee: Murata Manufacturing Co., LTD
    Inventors: Koji Nakashima, Hideya Morishita, Hiromichi Yamada
  • Patent number: 6404101
    Abstract: A surface acoustic wave device is arranged such that surface acoustic wave energy is trapped substantially perpendicularly to the surface acoustic wave propagation direction. At least one interdigital transducer having a plurality of electrode fingers and first and second bus bar electrodes is located on a piezoelectric substrate on which a surface acoustic wave is excited, and has an anisotropy index &ggr; of less than about −1 in the propagation direction. The electrode fingers each have a film thickness of not less than about 0.04 &lgr; in which &lgr; is the wavelength of the surface acoustic wave. At least a portion of the first and second bus bar electrodes have a thickness that is larger than that of each electrode finger.
    Type: Grant
    Filed: September 17, 2001
    Date of Patent: June 11, 2002
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Norio Taniguchi, Toshiaki Takata, Tatsurou Nagai, Shuji Yamato
  • Publication number: 20020063497
    Abstract: A thin film resonator and method includes a first electrode (110) and a second electrode (112) substantially parallel to the first electrode (110). An intermediate layer (120) is disposed between and coupled to the first and second electrode (110, 112). The intermediate layer (120) includes a first piezoelectric layer (122), a second piezoelectric layer (124), and a spacer layer (130) disposed between the first and second piezoelectric layers (122, 124). The spacer layer (130) has an acoustic impedance substantially the same as the first and second piezoelectric layers (122, 124) and is formed of a disparate material.
    Type: Application
    Filed: January 18, 2000
    Publication date: May 30, 2002
    Inventor: Carl M. Panasik
  • Publication number: 20020053860
    Abstract: A stacked piezoelectric device having high durability and a method of fabrication thereof facilitating easy control of the process of fabrication, comprising a piezoelectric stack (10) having a first side electrode (11) and a second side electrode (12), piezoelectric layers (131, 132) and internal electrode layers (141, 142) having substantially the same area, internal electrode layers (141, 142) having ends thereof exposed to the side (101) of the stack (10), the first side electrode (11) including first insulative portions (111) formed at the ends of alternate ones of the internal electrode layers (141) and a first conductive portion (121) formed over the first insulative portions (111), a second side electrode (12) being similarly configured to form insulative portions (112) at the other ends, the first and second insulative portions (111, 112) being formed of an insulative resin, while the first and second conductive portions (112, 122) being formed of a conductive resin.
    Type: Application
    Filed: November 2, 2001
    Publication date: May 9, 2002
    Inventors: Shinya Mitarai, Masayuki Kobayashi, Atsushi Murai, Akio Sugiura, Kazuhide Sato, Isao Mizuno
  • Patent number: 6377138
    Abstract: A surface acoustic wave filter element and a method of producing the same. The element is constructed in a manner such that a conductive film, which constitutes a plurality of electrode fingers, a bus bar connecting the electrode fingers in common, an electrode pad connected to the bus bar, etc., is formed on a piezoelectric substrate. When using the surface acoustic wave filter element with this arrangement in a high-frequency band, the thickness of the conductive film and the line width of electrodes are reduced, so that the mechanical strength is a critical problem. According to the present invention, therefore, the conductive film has a two-layer structure, including a layer containing tantalum and aluminum and a metallic layer of aluminum or an alloy consisting mainly of aluminum formed thereon, for example. The composition ratio between tantalum and aluminum is set so that the tantalum content ranges from 39% to 75% (atomic percentage).
    Type: Grant
    Filed: June 4, 1999
    Date of Patent: April 23, 2002
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Toshiyuki Takagi, Hitoshi Chiyoma, Naoki Akahori, Yasuo Ebata, Minoru Kawase, Masayoshi Koshino, Kaoru Sakinada
  • Publication number: 20020043901
    Abstract: A multilayer-type piezoelectric actuator having a multilayer piezoelectric unit which is capable of enduring the extension of contraction thereof to prevent the disconnection of external electrodes. The multilayer piezoelectric unit (2) includes a plurality of piezoelectric plates (21) of a piezoelectric material and a plurality of internal electrodes (22) of a conductive material arranged in alternate layers. The external electrodes (3) are arranged on the side surfaces (23), respectively, of the multilayer piezoelectric unit (2) and electrically connected to a plurality of the internal electrodes (22). The external electrodes (3) are each configured of an electrode base (31) arranged in contact with a corresponding side surface (23) of the multilayer piezoelectric unit (2), a tabular metal net conductor (32) arranged on the electrode base (31), and a plurality of conductive adhesives (33) for partially bonding the electrode base (31) and the tabular metal net conductor (32).
    Type: Application
    Filed: December 27, 2001
    Publication date: April 18, 2002
    Inventors: Noriaki Kihara, Toshihiko Ito, Haruo Isioka, Atsushi Murai
  • Publication number: 20020043900
    Abstract: Disclosed is a piezoelectric transformer provided with node point recognition patterns for visually indicating respective node points, at which external electrical connection of input and output electrodes is made, thereby allowing the external electrical connection of the input and output electrodes to be easily achieved in a manual wire soldering process, while allowing the wire soldering process to be automatically carried out irrespective of the size of the piezoelectric transformer. The piezoelectric transformer, which includes a piezoelectric member, an input electrode, an output electrode, and a ground electrode, the electrodes being printed on the piezoelectric member, further includes a plurality of node point recognition patterns extending radially about the center of each of the electrodes while being spaced apart from the center of the electrode by a desired radial distance.
    Type: Application
    Filed: December 11, 2001
    Publication date: April 18, 2002
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Jong-Sun Kim, Nak-Cheol Sung
  • Publication number: 20020043889
    Abstract: A method for producing a surface acoustic wave device includes the steps of forming a resist pattern corresponding to an interdigital electrodes transducer onto a piezoelectric substrate; forming a first electrode layer comprising elemental Ti or a Ti-based alloy onto the piezoelectric substrate and the resist pattern R; forming a second electrode layer which comprises elemental Cu or an Al-based alloy containing at least 2% by weight of Cu (this layer may have a multilayered structure) onto the first electrode layer; and removing both the resist pattern R and unnecessary parts, if any, of the first electrode layer 31 and the second electrode layer to simultaneously pattern the first electrode layer and the second electrode layer. A surface acoustic wave device is constructed according to the above method.
    Type: Application
    Filed: December 26, 2001
    Publication date: April 18, 2002
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Kazuhiro Inoue, Masanobu Watanabe
  • Patent number: 6369491
    Abstract: A surface acoustic wave device includes a piezoelectric plate and at least one interdigital electrode provided on the piezoelectric plate. The interdigital electrode includes a first metallic thin film and a second metallic thin film laminated on the first metallic thin film and containing tantalum as a principal component, and at least a portion of the tantalum of the second metallic thin film is &agr;-tantalum.
    Type: Grant
    Filed: August 31, 2000
    Date of Patent: April 9, 2002
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Masatoshi Nakagawa, Makoto Tose, Yoshihiro Koshido, Michio Kadota, Toshimaro Yoneda, Takeshi Nakao
  • Patent number: 6369490
    Abstract: An electronic element includes a substrate with electrode pads provided thereon. Intermediate electrodes include base electrodes on the bottom surface of the intermediate electrodes, and the bottom surface of the intermediate electrodes are disposed on the electrode pads. Bump electrodes are provided on the intermediate electrodes and include a metal having a melting point of about 450° C. or more. Further, the base electrodes include a metallic material that can reduce orientation of the intermediate electrodes.
    Type: Grant
    Filed: April 10, 2000
    Date of Patent: April 9, 2002
    Assignee: Murata Manufacturing Co., LTD
    Inventor: Shigeto Taga
  • Publication number: 20020038990
    Abstract: The present invention includes a method of fabricating a piezoelectric composite device comprising steps of (a) disposing a first layer of electrically non-conductive film over the first layer of tape; (b) disposing a first electrically conductive lead over the first layer of electrically non-conductive film; (c) disposing a piezoelectric wafer over the first electrically conductive lead and the first layer of electrically non-conductive film; (d) disposing a second electrically conductive lead over the piezoelectric wafer; (e) disposing a second electrically non-conductive film over the second electrically conductive lead and the wafer, wherein the layers of electrically non-conductive film, the electrically conductive leads, and the wafer form a laminate assembly; and (f) consolidating the laminate assembly at a predetermined temperature and pressure.
    Type: Application
    Filed: August 17, 2001
    Publication date: April 4, 2002
    Applicant: National Aeronautics and Space Administration
    Inventors: Garnett C. Horner, John Edward Teter, William Eugene Robbins, Benjamin M. Copeland
  • Publication number: 20020038989
    Abstract: An acoustic resonator includes a ferromagnetic compensator which at least partially offsets temperature-induced effects introduced by an electrode-piezoelectric stack. The compensator has a positive temperature coefficient of frequency, while the stack has a negative temperature coefficient of frequency. By properly selecting the thickness of the compensator, temperature-induced effects on resonance may be neutralized. Alternatively, the thickness can be selected to provide a target positive or negative composite temperature coefficient of frequency. In the preferred embodiment, the compensator is formed of a nickel-iron alloy, with the most preferred embodiment being one in which the alloy is approximately 35% nickel and approximately 65% iron. In order to prevent undue electromagnetic losses in the ferromagnetic compensator, a metallic flashing layer may be added to at least partially enclose the compensator.
    Type: Application
    Filed: November 8, 2001
    Publication date: April 4, 2002
    Inventor: John Dwight Larson
  • Publication number: 20020024271
    Abstract: A surface acoustic wave device includes a surface acoustic wave substrate having two IDT electrodes including wiring electrode portions made of aluminum disposed thereon. First, second and third metal films are laminated on each of the wiring electrode portions. The first metal film has superior bondability to aluminum, and the third metal film has superior bondability to bumps. In addition, the second metal film has an ability to suppress the diffusion of the metal defining the first metal film.
    Type: Application
    Filed: June 27, 2001
    Publication date: February 28, 2002
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Yoshitsugu Hori, Yuji Kimura, Kazunobu Shimoe, Shigeto Taga, Toshiyuki Fuyutsume
  • Patent number: 6346763
    Abstract: A high output stacked type piezoelectric transformer is disclosed, in which the capacitance values of input and output are increased, and the oscillation speed is lowered, to realize a high output, and to lower the heat release temperature. The high output stacked piezoelectric transformer includes a first piezoelectric element and a first input electrode formed upon the first piezoelectric element. A first output electrode is provided electrically isolated from the first input electrode. A ground electrode is formed on the bottom of the first piezoelectric element, and a second piezoelectric element is formed under the ground electrode. A second input electrode is formed on the bottom of the second piezoelectric element, and a second output electrode is electrically isolated from the second input electrode.
    Type: Grant
    Filed: June 23, 2000
    Date of Patent: February 12, 2002
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventor: Yangho Moon
  • Publication number: 20020008446
    Abstract: The present invention is a method for adjusting the resonant frequency of a mechanical resonator whose frequency is dependent on the overall resonator thickness. Alternating selective etching is used to remove distinct adjustment layers from a top electrode. One of the electrodes is structured with a plurality of stacked adjustment layers, each of which has distinct etching properties from any adjacent adjustment layers. Also as part of the same invention is a resonator structure in which at least one electrode has a plurality of stacked layers of a material having different etching properties from any adjacent adjustment layers, and each layer has a thickness corresponding to a calculated frequency increment in the resonant frequency of the resonator.
    Type: Application
    Filed: September 24, 2001
    Publication date: January 24, 2002
    Inventors: Bradley Paul Barber, Yiu-Huen Wong
  • Patent number: 6339276
    Abstract: The present invention is a method for adjusting the resonant frequency of a mechanical resonator whose frequency is dependent on the overall resonator thickness. Alternating selective etching is used to remove distinct adjustment layers from a top electrode. One of the electrodes is structured with a plurality of stacked adjustment layers, each of which has distinct etching properties from any adjacent adjustment layers. Also as part of the same invention is a resonator structure in which at least one electrode has a plurality of stacked layers of a material having different etching properties from any adjacent adjustment layers, and each layer has a thickness corresponding to a calculated frequency increment in the resonant frequency of the resonator.
    Type: Grant
    Filed: November 1, 1999
    Date of Patent: January 15, 2002
    Assignee: Agere Systems Guardian Corp.
    Inventors: Bradley Paul Barber, Yiu-Huen Wong
  • Publication number: 20010054859
    Abstract: A piezoelectric ceramic body includes a multiplicity of insulating layers, arranged one on top of the other, made of a piezoactive ceramic material, the insulating layers being separated from each other at least in areas by internal electrodes, of which at least one has a silver-containing material at least in areas. The material of the silver-containing internal electrode furthermore has a component reducing or inhibiting the diffusion of silver from the internal electrodes into an insulating layer, in particular a ceramic component on the basis of a PZT ceramic.
    Type: Application
    Filed: February 12, 2001
    Publication date: December 27, 2001
    Inventors: Marianne Hammer, Friederike Lindner, Petra Kuschel
  • Publication number: 20010052736
    Abstract: A surface acoustic wave device which utilizes excitation of a shear horizontal wave includes a piezoelectric substrate and an interdigital transducer provided on the piezoelectric substrate. The interdigital transducer includes at least three metal layers containing at least one first layer made of a metal with a density of approximately 15 g/cm3 or more as a major component and at least one second layer made of a metal with a density of about 12 g/cm3 or less. The volume of the first layer being in the range from about 20% to about 95% of the total volume of the interdigital transducer or the reflector.
    Type: Application
    Filed: May 3, 2001
    Publication date: December 20, 2001
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Takashi Iwamoto, Yoshihiro Koshido
  • Patent number: RE38278
    Abstract: This invention relates to a surface acoustic wave device and a production process thereof. An electrode is formed by alternately laminating a film of an aluminum alloy containing at least copper added thereto and a copper film on a piezoelectric substrate. While the particle size of the multi-layered electrode materials in kept small, the occurrence of voids in the film is prevented and life time of the surface acoustic wave device is elongated.
    Type: Grant
    Filed: April 5, 1999
    Date of Patent: October 21, 2003
    Assignee: Fujitsu Limited
    Inventors: Yoshio Satoh, Osamu Ikata, Hidema Uchishiba, Takashi Matsuda, Tokihiro Nishihara, Mitsuo Takamatsu, Hajime Taniguchi