Abstract: A piezoelectric device according to the present invention includes lead wires (12) each having one end electrically connected to a circuit pattern, and a piezoelectric oscillator (13) made of quartz and having terminals (13a) electrically connected to the other ends of the lead wires (12), wherein the terminals (13a) of the piezoelectric oscillator (13) and the lead wires (12) are respectively capacitively coupled with each other via an insulation layer (14). According to the structure, the piezoelectric device can reduce its vertical height.

Abstract: A liquid ejecting head includes a flow channel-forming substrate including a pressure-generating chamber that is in communication with a nozzle opening through which liquid is ejected; and a piezoelectric device that is provided on a surface of the flow channel-forming substrate and is configured to cause change in pressure of the pressure-generating chamber. The piezoelectric device includes a pair of electrodes constituted by a cathode and an anode, and a piezoelectric layer that is sandwiched between the pair of electrodes and is displaceably disposed. A negatively charged region is formed in a portion of the piezoelectric layer, the portion being near the cathode. A positively charged region is formed in a portion of the piezoelectric layer, the portion being near the anode.

Abstract: The invention proposes a process for the surface treatment of aluminium in order to produce an electrical contact, and a corresponding component part, wherein an oxide layer on the aluminium surface is removed, for example by etching, in a first step and, in a second step, before an oxide layer is re-formed, the surface is sealed wet-chemically with a conversion layer having metal ions of zirconium or titanium.

Abstract: A piezoelectric actuator includes external conductors formed on an outer surface of a piezoelectric component. The external conductors each include a thick-film conductor and a conductive reinforcer. The thick-film conductor is provided with a first thick-film conductor formed on the outer surface of the piezoelectric component, second thick-film conductors which are formed on part of an outer surface of the first thick-film conductor and which are in surface-contact with the outer surface of the first thick-film conductor. The conductive reinforcer is attached to outer surfaces of the second thick-film conductors.

Abstract: Bulk acoustic resonators with multi-layer electrodes for Bulk Acoustic Wave (BAW) resonator devices. Various electrode combinations are disclosed. The invention provides a better compromise at resonant frequencies from 1800 MHz to 4 GHz in terms of keff2 and resistance than state of the art solutions using either Mo, or a bilayer of Al and W.

Abstract: An under bump metal film formed on a substrate includes a diffusion-resistant barrier layer made of a platinum group metal film, and an aluminum-based stress relaxation layer formed under the diffusion-resistant barrier layer.

Abstract: An ultra-thin film electrode including at least one electrically conductive layer disposed upon an adhesive layer that is carried by a substrate.

Abstract: A piezoelectric actuator for use in a fuel injection system of an internal combustion engine, the actuator comprising a stack of ferroelectric layers; an encapsulation for protecting the stack from the ingress of liquid; and oxygenation means for providing oxygen to the ferroelectric layers, the means positioned between the encapsulation and stack. The oxygenation means is preferably impregnated in a fabric which forms a layer between the encapsulation and the stack.

Abstract: The invention relates to a method for producing a piezoelectric actuator in which a metallization paste is applied to a sintered piezoelectric stack and a flexible metal electrode is arranged on top of the paste. In a subsequent baking or firing step, a base metallic coating is formed from the metallization paste, whereby the base coating is permanently connected to the piezoelectric stack and to the flexible metal electrode. Alternatively, the metallization paste can be applied to a green body which is subsequently sintered so that a first layer of a base metallic coating is formed in the sintering step. A metallization paste is applied to the first layer in a similar manner and a flexible metal electrode is arranged thereon, whereby the metal electrode becomes fixed during a second baking step.

Abstract: A liquid ejecting head includes: a piezoelectric element having a first electrode provided above a flow path forming substrate in which pressure generation chambers are formed, a piezoelectric body layer provided so as to correspond to each pressure generation chamber, and a second electrode provided above the piezoelectric body layer, wherein the first electrode, which is formed in the region facing the region where the piezoelectric body layer is formed, includes a first electrically-conductive layer, and a second electrically-conductive layer, which is made of a material having a smaller Young's modulus than that of the first electrically-conductive layer and is formed closer to the flow path forming substrate than the first electrically-conductive layer; and the first electrode, which is formed in the region facing the region where the piezoelectric body layer is not formed, has a surface constituted of the second electrically-conductive layer.

Abstract: A stacked piezoelectric device 1 including a ceramic laminate formed by laminating piezoelectric ceramic layers and inner electrode layers alternately and a pair of side electrodes. The inner electrode layers 13 and 14 have inner electrode portions 131 and 141 and the recessed portions 132 and 142. The ceramic laminate 15 has the stress absorbing portions 11 and 12. A recessed distance of one of two of the recessed portions 132 and 142 which interleave the stress absorbing portions 11 and 12 therebetween which is located on the same side surface as the stress absorbing portion 11 or 12 is greater than the depth of the stress absorbing portion 11 and 12.

Abstract: Providing a manufacturing method of a piezoelectric element by which even if an electrode and a piezoelectric film stacked on a substrate are baked at a high temperature, the electrode does not oxidize and mutual diffusion between the substrate, the electrode and the piezoelectric film may be suppressed. The electrode is adapted as a laminated layer body which includes an electroconductive oxide layer, a mixture layer having an electroconductive oxide and electroconductive metal, and an electroconductive metal layer including the electroconductive metal from a substrate side, and the mixture layer above is adapted as a graded composition structure in which a ration of the electroconductive oxide is highest in an interface with the electroconductive oxide layer and lowest in an interface with the electroconductive metal layer.

Abstract: Methods are disclosed for manufacturing piezoelectric vibrating pieces and devices including such pieces. According to an embodiment of the method, a piezoelectric vibrating piece is produced from a piezoelectric wafer. To form the piece, a profile of the piezoelectric vibrating piece is formed in a piezoelectric wafer. A first metal film (chromium; Cr) is formed on the surface of the piezoelectric piece. The chromium film is surface-oxidized to form a film having Cr foundation layer and an oxidized surface. A second metal film (gold; Au) is formed on the oxidized surface. Then, in selected regions not destined to become electrodes, the second metal film is removed, leaving electrode patterns at designated regions of the piezoelectric vibrating piece.

Abstract: Upper adhesion layer 35 formed between piezoelectricity layer 32 and upper electrode layer 34 so as to abut on piezoelectricity layer 32 and upper electrode layer 34 is included. Upper adhesion layer 35 includes first tungsten layer 47 made of tungsten in which an ? phase and a ? phase coexist and second tungsten layer 48 made of ?-phase tungsten. First tungsten layer 47 is configured so as to abut on piezoelectricity layer 32. It is possible to obtain a piezoelectric device which is capable of improving the adhesion property of both the piezoelectricity layer and the electrode layer and reducing a basic point voltage fluctuation at the time of high-temperature operation so as to improve reliability.

Abstract: An elastic wave device has a structure that prevents cracks from being formed in a piezoelectric substrate in flip-chip bonding using a bump, that minimizes the contact resistance in a contact portion where wiring patterns are electrically connected to each other, and that improves the insertion loss.

Abstract: An insulating target material for obtaining a conductive complex oxide film represented by a general formula ABO3, the insulating target material including an oxide of an element A, an oxide of an element B, and at least one of an Si compound and a Ge compound.

Abstract: A piezoelectric planar composite apparatus to provide health monitoring of a structure and associated methods are provided. The piezoelectric planar composite apparatus includes a piezoelectric electric material layer, multiple electrodes positioned in electrical contact with the piezoelectric material layer, and multiple sets of electrode interconnect conductors each positioned in electrical contact with a different subset of the electrodes and positioned to form multiple complementary electrode patterns. Each of the complementary electrode patterns is positioned to form an electric field having an electric field axis oriented along a different physical axis from that of an electric field formed by at least one other of the complementary electrode patterns. The interconnect conductors can be distributed over several electrode interconnect conductor carrying layers to enhance formation of the different complementary electrode patterns.

Abstract: Provided are a piezoelectric vibrator and an electrode structure of the piezoelectric vibrator. The piezoelectric vibrator includes a piezoelectric material vibrating according to an electric signal, first and second electrode structures formed on the upper surface and the undersurface of the piezoelectric material, and including first to fourth layers sequentially stacked thereon, respectively. The first and third layers are formed of an alloy including Cr. The second and fourth layers are formed of Ag or an alloy including Ag.

Abstract: To provide a method of manufacturing a quartz resonator element having a small CI value, a quartz resonator element manufactured by this method, a quartz resonator, and a quartz oscillator. In a method of manufacturing a quartz resonator element in which on a surface of a plate-shaped quartz piece, a thin film-shaped electrode in order to excite the quartz piece is provided, a first metal layer that is composed of chromium and whose thickness is not less than 20 ? nor more than 45 ? is formed on the surface of the quartz piece (P4), and next, a second metal layer that is composed of gold or silver and whose thickness is not less than 500 ? nor more than 950 ? is formed on an upper surface of the first metal layer (P5), and then, the electrode made up of the first metal layer and the second metal layer is provided (P6). Thereafter, a quartz substrate on which the electrode is formed is heated at a temperature range of not less than 200° C. nor more than 400° C.

Abstract: Exemplary embodiments of the present invention are related to an apparatus and method for providing a strain tolerant electrode, comprising: an upper layer; a lower layer; with the potential for a plurality of compliant members providing electrical communication between the upper layer and the lower layer; and wherein a surface of the upper layer is in direct contact with a surface of the lower layer to provide an electrical path between the upper layer and the lower layer.

Abstract: An electronic component is disclosed, and this component includes an element with an electrode section which is formed of upper electrode (74), lower electrode (72), piezoelectric unit (70) placed between upper electrode (74) and lower electrode (72), and adhesive layer (76) layered between upper electrode (74) and piezoelectric unit (70). Piezoelectric unit (70) includes piezoelectric layer (80) made of piezoelectric material containing lead, and adhesive layer (76) includes a tungsten layer made of tungsten-based material. Piezoelectric layer (80) and the tungsten layer are layered together. The structure discussed above allows preventing a piezoelectric constant from lowering and a base-point voltage from varying. The lowering and the varying have been caused by a temperature-rise.

Abstract: An object of the present invention is to; miniaturize, increase the capacity, and reduce the price of piezoelectric components. The present invention relates to a piezoelectric component and a manufacturing method thereof, characterized in that: there are bonded and laminated at least two or more piezoelectric elements in which comb-teeth electrodes, wiring electrodes having element wirings that are arranged adjacent to the comb-teeth electrodes, and electrode terminals connected to the wiring electrodes, are formed on a principal surface of a plurality of piezoelectric substrates, while forming hollow sections between the respective piezoelectric elements; through electrodes are formed in the respective piezoelectric substrates so as to pass therethrough; the through electrodes are connected to the electrode terminals; and the piezoelectric substrates are sealed by a resin sealing layer.

Abstract: A multilayer body which includes a low-resistance metal layer having a low electrical resistance, excellent thermal resistance and low surface irregularity is provided. The multilayer body includes a substrate, and a low-resistance metal layer which is formed on the substrate and has a single-layer structure or a multilayer structure of two or more sublayers. The low-resistance metal layer includes a gold-containing layer or sublayer composed of gold and another metal.

Abstract: A surface wave sensor apparatus has a structure such that, on a first principal surface of a base substrate having first through-hole conductors, surface acoustic wave devices are bonded via thermo-compression anisotropic conductive sheets, on first principal surfaces of piezoelectric substrates of the surface acoustic wave devices, electrodes, such as IDTs, are provided, respectively. These electrodes extend toward second principal surfaces via second through-hole conductors and are provided in the piezoelectric substrates. The first through-hole conductors overlap with the second through-hole conductors with the thermo-compression anisotropic conductive sheets being disposed therebetween, respectively.

Abstract: The piezoelectric actuator comprises: a supporting substrate; a thermal stress controlling layer which is formed on the supporting substrate; and a piezoelectric body which is formed as a film onto the thermal stress controlling layer on the supporting substrate at a higher temperature than room temperature, wherein the thermal stress controlling layer reduces a film stress induced by formation of the piezoelectric body.

Abstract: A thickness shear mode (TSM) resonator is described, comprising a diamond layer. The diamond layer is preferably a high quality diamond layer with at least 90% sp3 bonding or diamond bonding. A method for manufacturing such a resonator is also described. The thickness shear mode resonator according to embodiments described herein may advantageously be used in biosensor application and in electrochemistry applications.

Abstract: A multi-layer piezoelectric element having excellent durability in which the amount of displacement does not change even after subjecting to continuous operation over a long period of time under a high voltage and a high pressure is provided. The multi-layer piezoelectric element comprises a stack formed by stacking piezoelectric layers and internal electrodes alternately one on another and external electrodes the proportion of silver contained in electrically conductive material of the internal electrode near the junction with the external electrode is higher than the proportion of silver contained in electrically conductive material of the internal electrode located inside of the stack.

Abstract: The present invention generally relates to medical devices, and more particularly to an improved medical imaging device. In one embodiment, an imaging device includes a drive shaft having proximal and distal ends received within the lumen; and an imaging transducer assembly coupled to the distal end of the drive shaft and positioned at the distal portion of the elongate member. The imaging transducer assembly includes one or more imaging transducers formed with a piezoelectric composite plate using photolithography based micromachining.

Abstract: A piezoelectric device includes: a substrate; a first conductive layer formed over the substrate, the first conductive layer including at least one buffer layer formed of a (001) preferentially oriented lanthanum-based layered perovskite compound; a piezoelectric layer formed over the first conductive layer and including a piezoelectric having a perovskite structure; and a second conductive layer electrically connected with the piezoelectric layer.

Abstract: In a piezoelectric element having a substrate, a lower electrode layered on the substrate, a piezoelectric body made of ceramic layered on top of the lower electrode and an upper electrode layered on the piezoelectric body, wherein a first metal layer is provided between the substrate and the lower electrode, a second metal layer is provided between the lower electrode and the piezoelectric body, and the first metal layer and the second metal layer are made of a metal selected from among metals of which the ionization tendency is not less than that of Cu, oxides of metals of which the ionization tendency is not less than that of Cu, and alloys of metals of which the ionization tendency is not less than that of Cu.

Abstract: Microfluidic shunt valves are disclosed having a deflectable element capable of being held in a closed position to occlude the passage of fluid between an inlet and outlet and, when not held in the closed position, the deflectable element is adapted to oscillate in response to fluid pressure pulses and thereby facilitate fluid passage through the valve. Controls for activating the deflectable element to permit fluid passage are also included.

Abstract: A piezoelectric resonator include a multi-layer top electrode. The multi-layer top electrode includes at least a top metal layer and a bottom metal layer. A top metal layer edge is recessed compared to a bottom metal layer edge allowing conformal deposition of a passivation layer. The passivation layer covers and protects the underlying layers from subsequent etching, thereby preventing etch undercut of the top electrode. In some embodiments, the multi-layer top electrode is configured as a bi-layer. In other embodiments, an extra layer is configured between the top metal layer and the bottom metal layer, for example a shunt load layer.

Abstract: An object of the present invention is to provide a piezoelectric resonator provided with a electrode on the surface of a plate piezoelectric blank, which excites the piezoelectric blank, the piezoelectric resonator being capable of suppressing deterioration of an electrode under high temperature circumstances. Another object is to provide a temperature sensor suitable for temperature measurement at high temperatures. As a concrete means for solving the problems is that the electrode includes a first metal layer, formed on the surface of the piezoelectric blank, and made of at least one kind selected from the group consisting of chromium (Cr), titanium (Ti), nickel (Ni), aluminum (Al) and copper (Cu), or having the same adhesion to the above-described piezoelectric blank as that of these metals; a second metal layer made of gold (Au) or silver (Ag) deposited on the surface of the first metal layer; and a third metal layer made of chromium (Cr) deposited on the surface of the second metal layer.

Abstract: In order to provide a surface acoustic wave device provided with a pseudo-single crystal aluminum electrode film, having excellent power durability, easy to manufacture, and possible to grow with good reproducibility, a titanium buffer film 4 and an electrode film composed of an aluminum film or an aluminum alloy film are formed on a piezoelectric substrate 2 composed of lithium tantalate or lithium niobate. The electrode film 5 comprises a pseudo-single crystal film composed of two (111) domains. Each of the <111> directions of two (111) domains tilts in the range of 0 to 10 degrees to the substrate surface, and the <11-2> directions in the respective (111) domain planes are 1 to 15 degrees apart.

Abstract: A method of fabricating a BAW piezoelectric resonator, the method comprising the steps of providing a bottom electrode and a piezoelectric layer coupled to the bottom electrode. A bottom metal layer is deposited on a top electrode on the piezoelectric layer. The bottom metal layer is patterned and etched. A top metal layer of the top electrode is deposited on the etched bottom metal layer. The top metal layer is patterned and layered such that the top metal layer completely covers the top and sides of the bottom metal layer.

Abstract: According to an exemplary embodiment, a bulk acoustic wave (BAW) resonator includes a piezoelectric layer situated between upper and lower electrodes, where each of the upper and lower electrodes are a high density metal. The BAW resonator further includes a controlled thickness region including a low density metal segment, where the low density metal segment is situated adjacent to the piezoelectric layer, and where the controlled thickness region has controlled electromechanical coupling. The controlled thickness region can provide reduced electromechanical coupling into lateral modes. The low density metal segment can extend along the perimeter of the BAW resonator.

Abstract: An IDT electrode (3) on a piezoelectric substrate (2) has an electrode including first metal layers (31a, 31b) formed of titanium or a titanium alloy, or chromium or a chromium alloy and second metal layers (32a, 32b) formed of aluminum or an aluminum alloy, copper or a copper alloy, or gold or a gold alloy, which are laminated alternately. The orientation degrees in the first metal layer (31a) that is closest to the surface of the piezoelectric substrate (2) in the first metal layers (31a, 31b) and the second metal layer (32a) that is closest to the surface of the piezoelectric substrate (2) in the second metal layers (32a, 32b) are higher than the orientation degrees in the upper metal layers. As compared with the prior art where the orientation degrees in the first metal layers (31a, 31b) and the second metal layers (32a, 32b) are not considered, the power handling capability of the IDT electrode (3) can be significantly improved.

Abstract: An actuator device includes: a layer provided on a single crystal silicon (Si) substrate, and made of silicon dioxide (SiO2); at least one buffer layer provided on the layer made of silicon dioxide (SiO2); a base layer provided on the buffer layer, and made of lanthanum nickel oxide (LNO) having the (100m) plane orientation; and a piezoelectric element. The piezoelectric element includes: a lower electrode provided on the base layer, and made of platinum (Pt) having the (100) plane orientation; a piezoelectric layer made of a ferroelectric layer whose plane orientation is the (100) orientation, the piezoelectric layer formed on the lower electrode by epitaxial growth where a crystal system of at least one kind selected from a group consisting of a tetragonal system, a monoclinic system and a rhombohedral system dominates the other crystal systems; and an upper electrode provided on the piezoelectric layer.

Abstract: A surface acoustic wave component includes a piezoelectric substrate and an electrode structure that includes multiple layers and that is on the piezoelectric substrate. A dielectric layer is above the electrode structure. The dielectric layer has an acoustic impedance Za,d. The multiple layers include a first layer system that includes at least one first layer made of a first material, which has an acoustic impedance that is less than 2Za,d. The second layer system includes at least one second layer made of a second material, which has an acoustic impedance that exceeds 2Za,d. The second layer system has a height that is between 15% and 85% of a total height of the multiple layers.

Abstract: A bulk acoustic wave resonator which has excellent elasticity and high electromechanical energy conversion efficiency. A bulk acoustic wave resonator comprises a substrate, a lower electrode formed on the substrate, an interlayer formed on the lower electrode layer, a piezoelectric layer formed on the interlayer, and an upper electrode layer formed on the piezoelectric layer.

Abstract: A ceramic member in which the metal layers with high void ratio are sufficiently sintered to lower a residue of resin is produced. The method for manufacturing a ceramic member which comprises a step of forming a stacked compact from a plurality of metallic paste layers containing a metal component M1 that are stacked one on another via ceramic green sheets, and a step of firing the stacked compact, wherein at least one of plural metallic paste layers is formed as a second metallic paste layer that has the mass percentage X higher than that of the metallic paste layer that adjoin therewith in the stacking direction and a ceramic powder is contained in the second metallic paste layer in the step of forming the stacked compact, the mass percentage X being the proportion of the metal component M1 to the total metal content in the metallic paste layer.

Abstract: In a method for producing a boundary acoustic wave device that includes a first medium, a second medium, and a third medium laminated in that order, and electrodes disposed at the interface between the first medium and the second medium, the method includes the steps of preparing a laminate including the first medium, the second medium, and the electrodes disposed at the interface between the first medium and the second medium, adjusting the thickness of the second medium after the step of preparing the laminate to regulate a frequency or the acoustic velocity of a surface acoustic wave, a pseudo-boundary acoustic wave, or a boundary acoustic wave, after the adjusting step, forming the third medium different from the second medium in terms of the acoustic velocity with which the boundary acoustic wave propagates therethrough and/or in terms of material.

Abstract: There is a need for a piezoelectric element capable of improving a productivity and a yield without impairing the piezoelectric characteristic and a method for manufacturing the same. A piezoelectric element is provided with a substrate, a first electrode film disposed on the substrate, a piezoelectric film disposed on the first electrode film, and a second electrode film disposed on the piezoelectric film. The piezoelectric film has a laminated structure composed of a plurality of crystallized piezoelectric thin films. The piezoelectric film having a predetermined thickness is formed by repeated cycles of a film formation step of forming a piezoelectric thin film and a crystallization heat treatment step of heat-treating the piezoelectric thin film to effect crystallization. In this manner, a piezoelectric film exhibiting uniform crystallinity in the film thickness direction may be produced.

Abstract: A piezoelectric thin-film resonator includes: a lower electrode that is formed on a substrate; a piezoelectric film that is formed on the lower electrode; and an upper electrode that is formed on the piezoelectric film. In the piezoelectric thin-film resonator, the upper electrode has a greater film thickness than the lower electrode.

Abstract: A piezoelectric vibrating piece having a first and a second surface at an opposing side of the first surface is comprised of an piezoelectric piece having designated coefficient of thermal expansion; a first electrode film having bigger coefficient of thermal expansion than the designated coefficient of thermal expansion and formed on the first surface; and a second electrode film having smaller coefficient of thermal expansion than the designated coefficient of thermal expansion and formed on the second surface.

Abstract: A method for manufacturing a piezoelectric element includes the steps of forming a first electrode above a substrate, forming, above the first electrode, a piezoelectric layer composed of a piezoelectric material having a perovskite structure, and forming a second electrode above the piezoelectric layer, wherein the step of forming the first electrode includes forming a layer containing nickel, and forming, above the layer containing nickel, a lanthanum nickelate layer that is oriented to a cubic (100).

Abstract: A boundary acoustic wave device includes a first medium, a second medium, and an IDT electrode disposed at an interface between the first medium and the second medium, the IDT electrode having an Au layer defining a main electrode layer, wherein a Ni layer is laminated so as to contact at least one surface of the Au layer, and a portion of Ni defining the Ni layer is diffused from the Ni layer side surface of the Au layer toward the inside of the Au layer.

Abstract: A resonator includes a substrate, and a resonating unit formed on the substrate, and having a lower electrode, a piezoelectric film, and an upper electrode. The lower electrode is formed of at least two layers to adjust a piezoelectric coupling coefficient. The lower electrode includes a first electrode layer and a second electrode layer, which have crystallographic characteristics, particularly, grain sizes or surface roughnesses Ra, different from each other, respectively. The first and the second electrode layers are formed to have a predetermined thickness ratio to each other.

Abstract: A laminate-type piezoelectric element has a ceramic laminated body obtained by alternately laminating piezoelectric layers made of a piezoelectric material and inner electrode layers having electrical conductivity. Outer electrodes are joined to side surfaces of the ceramic laminated body via an electrically conductive adhesive. The electrically conductive adhesive has buried therein mesh bodies obtained by forming a mesh by using a nonmetallic material. The mesh bodies are desirably constituted by using any one of a resin, ceramic, carbon or glass.

Abstract: A composition for ferroelectric thin film formation, comprising at least a colloidal solution containing metals serving as materials constituting a ferroelectric thin film, the colloidal solution having an average colloidal particle diameter of 1 to 100 nm, and obtaining a particle size distribution having two or more peaks; a ferroelectric thin film formed from the composition for ferroelectric thin film formation, and a liquid-jet head equipped with a piezoelectric element having the ferroelectric thin film.