Discharge Device Load With Fluent Material Supply To The Discharge Space Patents (Class 315/111.01)
  • Patent number: 7557362
    Abstract: Ion sources and methods for generating an ion beam with a controllable ion current density distribution. The ion source includes a discharge chamber and an electromagnet adapted to generate a magnetic field for changing a density distribution of the plasma inside the discharge chamber and, thereby, to change the ion current density distribution.
    Type: Grant
    Filed: February 26, 2007
    Date of Patent: July 7, 2009
    Assignee: Veeco Instruments Inc.
    Inventors: Rustam Yevtukhov, Alan V. Hayes, Viktor Kanarov, Boris L. Druz
  • Publication number: 20090096380
    Abstract: A system for producing energetic particles including a housing containing an anode and a cathode, wherein the anode is connected to a voltage supply and the cathode is one of a cathode containing an oxide layer and a cathode in the presence of oxygen, said cathode is grounded; a vacuum source connected to the housing for providing a reduced pressure in the housing; and a supply of at least one gas connected to the housing for introducing the at least one gas into the housing containing deuterium and oxygen.
    Type: Application
    Filed: October 12, 2007
    Publication date: April 16, 2009
    Inventors: Brian Scanlan, Edmund Storms
  • Publication number: 20090058303
    Abstract: A device for coupling ionization energy into an ion or electron source, which is excited inductively or inductively-capacitively is provided. The device includes: a discharge vessel for a gas, which is to be ionized; a coupling coil, which is wound around the discharge vessel and feeds in a high frequency energy, which is required for plasma excitation; a coupling capacitor, which is electrically coupled to the coupling coil; a high frequency generator, which is electrically coupled to the coupling coil. The high frequency generator forms, together with the at least one coupling capacitor, a resonant circuit. The high frequency generator includes a PLL controller for automatic impedance matching of the resonant circuit, so that the resonant circuit can be driven at a resonant frequency.
    Type: Application
    Filed: July 30, 2008
    Publication date: March 5, 2009
    Applicant: ASTRIUM GMBH
    Inventors: Werner Kadrnoschka, Anton Lebeda, Rainer Killinger, Johann Mueller, Stefan Weis
  • Patent number: 7498586
    Abstract: A gridless ion source operates from a control system (201) that generates an anode voltage (215) comprising a mains rectified signal such that the anode voltage modulates between a first voltage above a threshold and a second voltage below the threshold. The mains rectified signal is provided by transformer (210) receiving a mains input (211). The output of the transformer (213) is rectified by a bridge rectifier (214). In preferred embodiments, the threshold is an ionization threshold such that the ion current is initiated and extinguished in every cycle.
    Type: Grant
    Filed: August 13, 2004
    Date of Patent: March 3, 2009
    Assignee: Saintech Pty, Ltd.
    Inventors: Wayne Sainty, William Vince Waller
  • Patent number: 7479645
    Abstract: An extreme UV radiation producing device in which adhesion of solid tin in the vacuum pump of an evacuation device is restricted, so that the maintenance period and the replacement period of the pump is prolonged is achieved by the provision of a treatment unit between a radiation source chamber and the evacuation device. The treatment device has a hydrogen radical producing part in which tin and/or a tin compound in the evacuated gas from the radiation source chamber is/are made into a tin hydride; and a heat treatment part in which the tin hydride is thermally decomposed and in which the tin produced liquefied and separated from the evacuated gas. The liquid tin is fed into a collecting/storage vessel and the evacuated gas from which the tin and/or a tin compound has been removed fed to the evacuation device.
    Type: Grant
    Filed: July 21, 2006
    Date of Patent: January 20, 2009
    Assignee: Ushiodenki Kabushiki Kaisha
    Inventors: Hironobu Yabuta, Taku Sumitomo
  • Patent number: 7435980
    Abstract: An electron beam irradiation device having an electron beam generating unit R, an irradiation chamber E for irradiating an electron beam to a irradiated object F, and an oxygen cutoff section S for blowing inert gas N on an upstream side of the irradiated chamber. The oxygen cutoff section is designed so that a gap Ws between partitions across the irradiated object is smaller than a gap We between the partitions across the irradiated object in the irradiation chamber (Ws<We). The gap Ws is made uniform, or almost uniform, throughout the entire area of the oxygen cutoff section, and a blowing slit 55 for blowing the inert gas to the processing surface of the irradiated object is provided on a partition with no projection nor recess involved.
    Type: Grant
    Filed: March 9, 2005
    Date of Patent: October 14, 2008
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventor: Seitaro Nakao
  • Publication number: 20080197779
    Abstract: A method, apparatus, and system are described for an ionic wind generator. The ionic wind generator may have a first electrode that is elevated off a surface of a device that the ionic wind generator is intended to cool. A first surface of the first electrode is in contact with a first surface of a first post that elevates the first electrode off the surface of the device that the ionic wind generator is intended to cool. The ionic wind generator causes a generation of ions that are then drawn through an interstitial atmosphere from the first electrode to a second electrode to affect a velocity of local flow over the surface of the device between the first electrode and the second electrode.
    Type: Application
    Filed: February 16, 2007
    Publication date: August 21, 2008
    Inventors: Timothy Scott Fisher, Suresh V. Garimella, David Batten Go, Rajiv K. Mongia
  • Patent number: 7323821
    Abstract: A device generates and/or influences electromagnetic radiation from a plasma, for the lithographic production of semiconductor elements. For example, the device generates and/or reflects EUV-radiation for EUV-lithography. In a first example, a magnetic means (10) generates at least one inhomogeneous magnetic field (11) and is provided as means for the targeted screening of at least one surface of the device (1; 5; 12) and/or another component (5; 12) from the charge carriers in the plasma (3).
    Type: Grant
    Filed: November 30, 2005
    Date of Patent: January 29, 2008
    Assignee: Qimonda AG
    Inventors: Siegfried Schwarzl, Stefan Wurm
  • Publication number: 20070296342
    Abstract: A compact Marx-type generator capable of producing high voltage pulses into low impedance loads. A parallel switch and distributed capacitance topology produce a coaxial-like conduction through the Marx-like circuit, resulting in a low source impedance. The parallel switching topology also lends itself to high repetition rates. Without loss of generality the device may be used, for example, as a source for vacuum diode loads, such as in flash radiography and high power microwaves.
    Type: Application
    Filed: June 12, 2006
    Publication date: December 27, 2007
    Applicant: APPLIED PHYSICAL ELECTRONICS, L.C.
    Inventor: Jonathan R. Mayes
  • Patent number: 7298092
    Abstract: A novel plasma reactor is provided that includes a discharge chamber with dimensional characteristics and configuration of dielectric and electrodes that optimize efficiency based on the characteristics of the corona discharge streamers generated. Upon application of a pulsed high voltage potential, the discharge chamber enables formation of plasma where surface streamers play a greater role in the overall energy density of the discharge chamber than gas streamers. The formation of gas streamers is constrained. Because surface streamers have a higher energy density, the present invention is able to achieve improved energy efficiency while preserving effectiveness for gas treatment.
    Type: Grant
    Filed: September 28, 2005
    Date of Patent: November 20, 2007
    Assignee: Old Dominion University Research Foundation
    Inventors: Muhammad Arif Malik, Karl J. Schoenbach
  • Patent number: 7230256
    Abstract: An ion doping system includes a chamber 11, an exhausting section 13 for exhausting gases from the chamber, an ion source 12 provided for the chamber, and an accelerating section 23 for extracting the ions, generated in the ion source 12, from the ion source 12 and accelerating the ions toward a target. The ion source 12 includes an inlet port 14 to introduce a gas including a dopant element, a filament 15 emitting thermo electrons, and an anode electrode 17 to produce an arc discharge between the filament and itself. The ion source 12 decomposes the gas through the arc discharge, thereby generating ions including the dopant element. The ion doping system controls the arc discharge such that a constant amount of arc current flows between the filament and the anode electrode.
    Type: Grant
    Filed: May 31, 2004
    Date of Patent: June 12, 2007
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Ken Nakanishi, Hiroshi Aichi
  • Patent number: 7201851
    Abstract: An etching processing apparatus 1 has a transfer chamber 2, a plurality of processing chambers 3 and 4, and a plurality of cassette chambers 7 and 8. Inside the transfer chamber 2, a transfer mechanism 14 is provided. A control device 17 pauses the operation of the vacuum pump 16 after closing an opening/closing valve 15 of a vacuum evacuating mechanism, which vacuum evacuates the transfer chamber 2 in which the transfer mechanism 14 is provided, when the operation of the transfer mechanism 14 is paused for a predetermined time or longer. Accordingly, conservation of energy becomes possible without causing decrease of productivity.
    Type: Grant
    Filed: October 27, 2005
    Date of Patent: April 10, 2007
    Assignees: Tokyo Electron Limited, Kabushiki Kaisha Toshiba
    Inventors: Toshihiko Kitoku, Shinji Niwa, Toshiki Hosaka, Takashi Kitazawa, Atsuo Sanda, Yoshitaka Sato
  • Patent number: 7196337
    Abstract: This invention relates to an apparatus for processing particles. The apparatus comprises a particle source having an exist aperture; an extraction electrode located at the exist aperture; an acceleration electrode adjacent to the extraction electrode; a processing compartment adjacent to the acceleration electrode; and a deceleration electrode located adjacent to the processing compartment. The invention also relates to methods of processing particles and to particles processed by the apparatus and methods of the invention.
    Type: Grant
    Filed: April 22, 2004
    Date of Patent: March 27, 2007
    Assignee: Cabot Microelectronics Corporation
    Inventor: David G. Mikolas
  • Patent number: 7192505
    Abstract: There is provided by this invention a wafer probe for measuring plasma and surface characteristics in plasma processing environment that utilizes integrated sensors on a wafer substrate. A microprocessor mounted on the substrate receives input signals from the integrated sensors to process, store, and transmit the data. A wireless communication transceiver receives the data from the microprocessor and transmits information outside of the plasma processing system to a computer that collects the data during plasma processing. The integrated sensors may be dual floating Langmuir probes, temperature measuring devices, resonant beam gas sensors, or hall magnetic sensors. There is also provided a self-contained power source that utilizes the plasma for power that is comprised of a topographically dependent charging device or a charging structure that utilizes stacked capacitors.
    Type: Grant
    Filed: September 27, 2004
    Date of Patent: March 20, 2007
    Assignee: Advanced Plasma, Inc.
    Inventors: Gregory A. Roche, Leonard J. Mahoney, Daniel C. Carter, Steven J. Roberts
  • Patent number: 7164236
    Abstract: A method and apparatus for generating and controlling a plasma (130) formed in a capacitively coupled plasma system (100) having a plasma electrode (140) and a bias electrode in the form of a workpiece support member (170), wherein the plasma electrode is unitary and has multiple regions (Ri) defined by a plurality of RF power feed lines (156) and the RF power delivered thereto. The electrode regions may also be defined as electrode segments (420) separated by insulators (426). A set of process parameters A={n, ?i, ?i, Pi, S; Li} is defined; wherein n is the number of RF feed lines connected to the electrode upper surface at locations Li, ?i is the on-time of the RF power for the ith RF feed line, ?i is the phase of the ith RF feed line relative to a select one of the other RF feed lines, Pi is the RF power delivered to the electrode through the ith RF feed line at location Li, and S is the sequencing of RF power to the electrode through the RF feed lines.
    Type: Grant
    Filed: March 5, 2004
    Date of Patent: January 16, 2007
    Assignee: Tokyo Electron Limited
    Inventors: Andrej S. Mitrovic, Eric J. Strang, Murray D. Sirkis, Bill H. Quon, Richard Parsons, Yuji Tsukamoto
  • Patent number: 7138767
    Abstract: A SWP source includes an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma. A cover plate coupled to the plasma surface of the EM wave launcher protects the EM wave launcher from the plasma.
    Type: Grant
    Filed: September 30, 2004
    Date of Patent: November 21, 2006
    Assignee: Tokyo Electron Limited
    Inventors: Lee Chen, Caiz Hong Tian, Naoki Matsumoto
  • Patent number: 7075095
    Abstract: A multistage plasma accelerator system includes at least one intermediate electrode between the plasma chamber between electrodes that include each other. An especially good efficiency can be achieved by way of an uneven distribution of potential to the potential stages formed by the plurality of electrodes having a high potential gradient of the last stage, when the plasma beam emerges, and by a special shape of the magnetic field prevailing in the plasma chamber of the last stage.
    Type: Grant
    Filed: October 30, 2002
    Date of Patent: July 11, 2006
    Assignee: Thales Electron Devices GmbH
    Inventors: Günter Kornfeld, Gregory Coustou, Gregory Emsellem
  • Patent number: 7000565
    Abstract: A plasma surface treatment system for irradiating a surface of a substrate to be treated with a nitrogen plasma excited by a high-frequency electric field to introduce nitrogen into the surface of the substrate comprises a pulse modulator for pulse modulation of the high-frequency electric field. By applying the high-frequency electric field in a pulsed form, it is possible to realize a nitriding by which the peak of nitrogen concentration is located at a shallower position and a desired nitrogen concentration can be obtained.
    Type: Grant
    Filed: March 17, 2004
    Date of Patent: February 21, 2006
    Assignee: Sony Corporation
    Inventors: Seiichi Fukuda, Seiji Samukawa
  • Patent number: 6998626
    Abstract: This invention relates to a method of producing a dopant gas species containing a required dopant element for implanting in a target and to an ion source for implementing such a method. In particular, although not exclusively, this invention relates to producing dopant ions for implanting in semiconductor wafers using an ion implanter. The present invention provides a method of producing a dopant gas species containing a required dopant element for implanting in a target, the method comprising: exposing a source mass of the element to gaseous bromine and element react to form a reactant product, and ionising the reactant product to produce ions of the dopant gas species.
    Type: Grant
    Filed: December 20, 2004
    Date of Patent: February 14, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Geoffrey Ryding, Shu Satoh
  • Patent number: 6998785
    Abstract: Plasma discharge sources for generating emissions in the VUV, EUV and X-ray spectral regions. Embodiments can include running a current through liquid jet streams within space to initiate plasma discharges. Additional embodiments can include liquid droplets within the space to initiate plasma discharges. One embodiment can form a substantially cylindrical plasma sheath. Another embodiment can form a substantially conical plasma sheath. Another embodiment can form bright spherical light emission from a cross-over of linear expanding plasmas. All the embodiments can generate light emitting plasmas within a space by applying voltage to electrodes adjacent to the space. All the radiative emissions are characteristic of the materials comprising the liquid jet streams or liquid droplets.
    Type: Grant
    Filed: July 12, 2002
    Date of Patent: February 14, 2006
    Assignee: University of Central Florida Research Foundation, Inc.
    Inventors: William T. Silfvast, Martin C. Richardson
  • Patent number: 6987364
    Abstract: A cold-cathode closed-drift ion source includes an anode, a cathode and a power supply. In certain example embodiments, neither the positive nor negative terminals of the power supply are connected to ground, and the anode and cathode are also not connected to ground. Thus, the ion source operates in a floating mode. As a result, the likelihood of formation of a problematic secondary circuit from the source to the power supply through the walls can be reduced and/or eliminated (or suppressed). Therefore, the chance of drawing a net positive charge from the ion source which induces a positive charge on dielectric or other surfaces proximate the wall(s) can be suppressed and/or reduced.
    Type: Grant
    Filed: September 3, 2004
    Date of Patent: January 17, 2006
    Assignee: Guardian Industries Corp.
    Inventor: Rudolph Hugo Petrmichl
  • Patent number: 6984941
    Abstract: A usable 13.5 nm radiation source in which Sn is the radiation substance, in which rapid transport with good reproducibility is possible up to the plasma generation site and in which formation of detrimental “debris” and coagulation of the vapor are suppressed as much as possible is achieved using emission of Sn ions in that SnH4 is supplied continuously or intermittently to the heating/ excitation part, is subjected to discharge heating and excitation or laser irradiation heating and excitation, and thus, is converted into a plasma from which extreme UV light with a main wavelength of 13.5 nm is emitted.
    Type: Grant
    Filed: March 5, 2004
    Date of Patent: January 10, 2006
    Assignee: Ushiodenki Kabushiki Kaisha
    Inventors: Tatumi Hiramoto, Kazuaki Hota
  • Patent number: 6963162
    Abstract: A gas distributor for an ion source includes a plate having a recess and a series of apertures spaced radially outward from the recess. The apertures define paths for the flow of a gas through the plate, and the gas distributor further includes a sacrificial element that is separate from the plate and that is receivable and seats within the recess. The sacrificial element forms an area of the gas distributor that is subjected to erosive forces during normal operations of the ion source, and therefore, prevents erosion of the surface of the plate. The sacrificial element is removable from the plate and replaceable with another sacrificial element during a procedure which neither requires the plate to be removed from the ion source nor the ion source to be disassembled.
    Type: Grant
    Filed: June 12, 2003
    Date of Patent: November 8, 2005
    Assignee: Dontech Inc.
    Inventor: Dominick Centurioni
  • Patent number: 6955054
    Abstract: The invention relates to thermal physics, in particular to a method and apparatus for cooling a working medium and a method for generating microwave radiation. The object is to reduce the power consumed in the cooling process and in the conversion of electric power into electromagnetic radiation energy. A working medium, molecules of which exhibit a stable dipole moment, is placed into a closed working zone of electrical field effect, the electric field having an intensity satisfying the condition: ?E>107 D V/m where: ? is the dipole moment of the working medium molecules, in Debyes (D), E is the electric field intensity, in V/m; and passage of electric current is prevented through the closed working zone. In generation of microwave radiation, exit of the microwave radiation is provided from the closed working zone of electric field effect, and heat is removed through absorption of the microwave radiation by an external coolant.
    Type: Grant
    Filed: February 15, 2002
    Date of Patent: October 18, 2005
    Inventor: Yury Eduardovich Zevatsky
  • Patent number: 6929712
    Abstract: A high-frequency current detector of a plasma processing apparatus detects a high-frequency current produced when high-frequency power in the range that does not cause generation of plasma in a chamber is supplied from a high-frequency power supply source to the chamber. The high-frequency current detector outputs the detected high-frequency current to a computer. The computer compares the high-frequency current received from the high-frequency current detector with a reference high-frequency current. When the received high-frequency current matches the reference high-frequency current, the computer determines that the process performance is normal. Otherwise, the computer determines that the process performance is abnormal. In this way, high-frequency characteristics specific to the apparatus are detected and the process performance are evaluated based on the detected high-frequency characteristics.
    Type: Grant
    Filed: September 6, 2002
    Date of Patent: August 16, 2005
    Assignee: Renesas Technology Corp.
    Inventors: Minoru Hanazaki, Keiichi Sugahara, Toshihiko Noguchi, Toshio Komemura, Masakazu Taki, Mutumi Tuda, Kenji Shintani
  • Patent number: 6870320
    Abstract: The present invention relates to a device for electron beam pulse formation and amplification comprising an electron beam axis (5) for microstructuring and amplifying current pulses. Such a device is especially suitable for pulse frequencies of from 100 to 400 MHz and power amplifications of several megawatts. The device can be used especially for ion beam acceleration, the device being arranged directly in an ion accelerator tank (1) having a central container axis (2) for guiding and accelerating a pulsed ion beam (3) in the container axis (2). The electron beam pulse formation and amplification device (4) is arranged with its electron beam axis (5) transverse and offset relative to the container axis (2) and comprises outside the ion accelerator tank (1) device components for microstructuring the electron beam (14) and, inside the container, comprises device components for output coupling of the electron beam to the consumer, which, in a preferred embodiment, is the ion beam (3) itself.
    Type: Grant
    Filed: July 20, 2001
    Date of Patent: March 22, 2005
    Assignee: Gesellschaft fuer Schwerionenforschung GmbH
    Inventors: Ulrich Ratzinger, Serguej Minaev, Stefan Setzer
  • Patent number: 6852969
    Abstract: A glow discharge spectroscopy (GDS) source operates at atmospheric pressure. One of the discharge electrodes of the device is formed by an electrolytic solution 27 containing the analyte specimen. The passage of electrical current (either electrons or positive ions) across the solution/gas phase interface causes local heating and the volatilization of the analyte species. Collisions in the discharge region immediately above the surface of the solution results in optical emission and ionization that are characteristic of the analyte elements. As such, these analyte elements can be identified and quantified by optical emission spectroscopy (OES) or mass spectrometry (MS). The device uses the analyte solution as either the cathode or anode. Operating parameters depend on the electrolyte concentration (i.e. solution conductivity) and the gap 35 between the solution surface and the counter electrode.
    Type: Grant
    Filed: August 7, 2003
    Date of Patent: February 8, 2005
    Assignee: Clemson University
    Inventors: R. Kenneth Marcus, W. Clay Davis
  • Patent number: 6815900
    Abstract: The invention is directed to a radiation source for generating extreme ultraviolet (EUV) radiation based on a hot, dense plasma generated by gas discharge.
    Type: Grant
    Filed: December 19, 2003
    Date of Patent: November 9, 2004
    Assignee: Xtreme technologies GbmH
    Inventors: Imtiaz Ahmad, Juergen Kleinschmidt, Guido Schriever, Uwe Stamm, Sven Goetze
  • Patent number: 6784620
    Abstract: A low/band/high pass filter includes first and second plasmas, each with a path for the flow of electromagnetic energy at frequencies above the plasma frequency. A path for the flow of electromagnetic energy is coupled to the second port of the first plasma and to a first port of the second plasma. The plasma frequency of the second plasma is greater than that of the first plasma. Energy below the plasma frequency of the first plasma is reflected from the first port of the first plasma, and energy above the plasma frequency of the second plasma propagates to the second plasma. That energy above the plasma frequency of the first plasma but below the plasma frequency of the second plasma reflects from the second plasma and is coupled out of the system. That energy at a frequency above the second plasma frequency propagates through the second plasma.
    Type: Grant
    Filed: March 10, 2003
    Date of Patent: August 31, 2004
    Assignee: Lockheed Martin Corporation
    Inventor: Christopher Wayne Peters
  • Patent number: 6765216
    Abstract: A method and device are presented for producing an intensive flow of atoms from an input flow of a molecular gas. Effects of ignition of a gas discharge of a complex type and dissociation of the gas molecules by electron impact in a discharge cell are utilized. The flow of atoms is output from the discharge cell through at least one emitting aperture. The complex gas discharge is composed of a main discharge and two auxiliary discharges of different types ignited in substantially coinciding zones of the discharge cell. The main discharge is an arc Penning discharge ignited in the vicinity of at least one emitting aperture. The first auxiliary discharge is a magnetron discharge with heated cathode, and the second auxiliary discharge is either a Penning discharge, or a Penning discharge with hollow cathode. The dissociation of the gas molecules is thereby carried out in the complex discharge and results in creation of the flow of hot and thermally atoms.
    Type: Grant
    Filed: March 4, 2002
    Date of Patent: July 20, 2004
    Assignee: Atomic Hydrogen Technologies Ltd.
    Inventors: Valery A. Kagadei, Dmitry I. Proskurovsky
  • Patent number: 6734446
    Abstract: There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.
    Type: Grant
    Filed: October 25, 2000
    Date of Patent: May 11, 2004
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toshiji Hamatani, Koichiro Tanaka
  • Publication number: 20040083971
    Abstract: The invention in one embodiment is realized in a plasma reactor for processing a semiconductor workpiece. The reactor includes a vacuum chamber having a side wall and a ceiling, a workpiece support pedestal within the chamber and generally facing the ceiling, a gas inlet capable of supplying a process gas into the chamber and a solenoidal interleaved parallel conductor coil antenna overlying the ceiling and including a first plurality conductors wound about an axis of symmetry generally perpendicular to the ceiling in respective concentric helical solenoids of at least nearly uniform lateral displacements from the axis of symmetry, each helical solenoid being offset from the other helical solenoids in a direction parallel to the axis of symmetry. An RF plasma source power supply is connected across each of the plural conductors.
    Type: Application
    Filed: October 29, 2003
    Publication date: May 6, 2004
    Applicant: Applied Materials, Inc.
    Inventors: John Holland, Valentin N. Todorow, Michael Barnes
  • Patent number: 6727654
    Abstract: The invention provides a plasma processing apparatus, in which the uniformity of the plasma density can be improved, and the electron temperature can be kept low. A vacuum vessel 21 for generating a plasma includes an upper vessel 22 that is dome-shaped and formed in one seamless piece, and a lower vessel 23 fastened tightly on a lower aperture portion 24 of the upper vessel 22 with a sealing member. The plasma processing apparatus is provided with a supply port 26 for supplying gas to the vacuum vessel 21 and an exhaust port 34 for exhausting gas. An electrode 29 for applying high-frequency power to ionize the gas is provided not in the vacuum vessel 21 but in ring-shape outside the vacuum vessel 21. On the outer side of this tubular electrode 29, a pair of tubular magnets 30 are provided, which form magnetic force lines that intersect perpendicularly with the electric field.
    Type: Grant
    Filed: January 10, 2001
    Date of Patent: April 27, 2004
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Unryu Ogawa, Takayuki Sato
  • Patent number: 6717133
    Abstract: A method and apparatus for generating electrical fields within the ion flight path of a mass spectrometer are provided. Gratings having a planar array of parallel conductive strands and electrically connected to a voltage source are placed in the ion flight path so that at least a portion of the conductive strands traverses the flight path. The gratings may be arranged within the ion flight path so that the conductive strands of each of the gratings are aligned behind the conductive strands of a first grating, with respect to the ion flight path, thus providing high ion transmission.
    Type: Grant
    Filed: June 13, 2001
    Date of Patent: April 6, 2004
    Assignee: Agilent Technologies, Inc.
    Inventor: Gangqiang Li
  • Patent number: 6710333
    Abstract: A process for modification of a surface structure by exposing the surface to a flow of neutral atomic or molecular gaseous medium excited to metastable level which is produced in a process of blowing a working gaseous medium through a discharge gap filled with plasma generated from this working gaseous medium.
    Type: Grant
    Filed: January 27, 2003
    Date of Patent: March 23, 2004
    Assignee: Wintek Corporation
    Inventor: Evgeny V. Shun'ko
  • Publication number: 20040042151
    Abstract: An improved method for charging ultrafine particles in coronas (e.g., unipolar or bipolar corona discharges) by exposing the particles to X-ray irradiation. Experimental tests have verified that positive corona in the presence of X-ray irradiation results in maximum or optimum charging efficiency, followed by a negative corona in the presence of X-ray irradiation, X-ray radiation only (without corona), negative corona only (without X-ray irradiation), and finally positive corona only (without X-ray irradiation). This method and system is particularly well suited for use with bioaerosol particles wherein exposure to the corona discharge and X-ray irradiation serves to both capture and inactivate the bioaerosol particles using a single device.
    Type: Application
    Filed: August 30, 2002
    Publication date: March 4, 2004
    Inventors: Pratim Biswas, Norikazu Namiki, Pramod Kulkarni
  • Publication number: 20030213559
    Abstract: A method for controlling a plasma used for materials processing includes generating a power for forming an electronegative plasma, detecting a signal that is related to a parameter of the plasma, and modulating the power generated in response to the signal. Modulation of the power causes a reduction in an instability of the parameter of the plasma. An apparatus for controlling a materials processing electronegative plasma includes a signal detector for detecting a signal that is related to a parameter of the plasma, and a power modulator for causing a modulation of the power for forming the plasma in response to the signal.
    Type: Application
    Filed: May 20, 2002
    Publication date: November 20, 2003
    Applicant: Applied Science and Technology, Inc.
    Inventor: Daniel Goodman
  • Patent number: 6635883
    Abstract: Incorporating the use of a permanent magnet within a GCIB apparatus to separate undesirable monomer ions from a gas cluster ion beam to facilitate improved processing of workpieces. In an alternate embodiment, the effect of the permanent magnet may be controlled by the use of an electrical coil. The above system eliminates problems related to power consumption and heat generation.
    Type: Grant
    Filed: December 1, 2000
    Date of Patent: October 21, 2003
    Assignee: Epion Corporation
    Inventors: Richard P. Torti, Jerald P. Dykstra
  • Patent number: 6608446
    Abstract: A radio frequency (RF) probe head apparatus is provided for measuring voltage and current of an RF signal in a sampled transmission line. The probe head apparatus includes a conductive housing, a bus inside the conductive housing, a pair of connectors mounted on the conductive housing and configured to pass an RF signal into and out of the housing via the bus, a voltage pick-up board within the housing, and a current pickup board within the housing. The voltage pickup board has an analog processor responsive to an electric field around the bus to produce a first DC output indicative of a root-mean-square (RMS) value of the electric field. The current pick-up board has a second analog processor responsive to a magnetic field around the bus to produce a second DC output indicative of an RMS value of the magnetic field.
    Type: Grant
    Filed: February 25, 2002
    Date of Patent: August 19, 2003
    Assignee: ENI Technology, Inc.
    Inventor: David J. Coumou
  • Patent number: 6603268
    Abstract: Ozone output in ion wind devices using one or more emitters (10) and an array of collectors (20) (accelerators) may be reduced through catalytic conversion of the produced ozone back to oxygen by using various materials placed in or downstream from the airflow, such as a manganese dioxide coating on the accelerator substrate elements. Precious metal or activated carbon coatings may also be used for the purpose of converting ozone to oxygen.
    Type: Grant
    Filed: June 21, 2002
    Date of Patent: August 5, 2003
    Assignee: Zenion Industries, Inc.
    Inventor: Jim L. Lee
  • Publication number: 20030057844
    Abstract: A system and method for maintaining a plasma in a plasma region, by supplying RF power at a fundamental frequency to the plasma region together with a gas in order to create an RF electromagnetic field which interacts with the gas to create a plasma that contains electromagnetic energy components at frequencies that are harmonics of the fundamental frequency. The components at frequencies that are harmonics of the fundamental frequency are removed from the plasma by placing a body of an RF absorber material in energy receiving communication with the plasma, the body having a frequency dependent attenuation characteristic such that the body attenuates electrical energy at frequencies higher than the fundamental frequency more strongly than energy at the fundamental frequency.
    Type: Application
    Filed: August 14, 2002
    Publication date: March 27, 2003
    Inventors: Thomas H. Windhorn, Andrej S. Mitrovic, Wayne L. Johnson
  • Patent number: 6518693
    Abstract: A method and apparatus for using a magnetic field generated by a thruster magnet to control electron current emitted by a cathode assembly. The magnetic field reduces leakage current drawn by an inactive anode by producing a magnetic field in proximity to the inactive anode. This magnetic field increases the impedance to the anode for electron current which is produced in the cathode assembly. This reduction in leakage current reduces the amount of electron current produced by the cathode assembly. This control system can be implemented by connecting all thruster anodes and cathodes in parallel to an anode power supply.
    Type: Grant
    Filed: November 10, 1999
    Date of Patent: February 11, 2003
    Assignee: Aerojet-General Corporation
    Inventors: Steven D. Meyer, David Q. King
  • Patent number: 6515238
    Abstract: An analytical balance that includes a balance scale, a wind guard encircling the balance scale, and an apparatus for generating an ionized stream of air for dissipating electrostatic charges of goods to be weighed. The apparatus for generating an ionized stream of air includes a blower that draws in air from the weighing space into at least one boundary surface of the weighing space. The blower also recycles the air back into the weighing space via at least one exhaust opening at another point. In this manner, highly effective dissipation of electrostatic charges is possible, and the stream of air can be conducted so that it exerts scarcely any vertical forces on the goods to be weighed. The analytical balance is very user-friendly in operation. Additionally, the apparatus for generating an ionized stream of air is preferably structured to be an easily installed optional component of the analytical balance.
    Type: Grant
    Filed: November 8, 2000
    Date of Patent: February 4, 2003
    Assignee: Sartorius Aktiengesellschaft
    Inventors: Joerg-Peter Martens, Heinrich Feldotte, Steffen Hirche, Eduard Bierich, Guenter Boetcher
  • Publication number: 20020180364
    Abstract: The present invention relates to a device for electron beam pulse formation and amplification comprising an electron beam axis (5) for microstructuring and amplifying current pulses. Such a device is especially suitable for pulse frequencies of from 100 to 400 MHz and power amplifications of several megawatts. The device can be used especially for ion beam acceleration, the device being arranged directly in an ion accelerator tank (1) having a central container axis (2) for guiding and accelerating a pulsed ion beam (3) in the container axis (2). The electron beam pulse formation and amplification device (4) is arranged with its electron beam axis (5) transverse and offset relative to the container axis (2) and comprises outside the ion accelerator tank (1) device components for microstructuring the electron beam (14) and, inside the container, comprises device components for output coupling of the electron beam to the consumer, which, in a preferred embodiment, is the ion beam (3) itself.
    Type: Application
    Filed: June 25, 2002
    Publication date: December 5, 2002
    Inventors: Ulrich Ratzinger, Serguej Minaev, Stefan Setzer
  • Publication number: 20020163313
    Abstract: The present invention provides a pulse power system for extreme ultraviolet and x-ray light sources. The pulse power system produces electrical pulses of at least 12 J at pulse repetition rates of at least 2000 Hz. The system is extremely reliable and has design lifetime substantially in excess of 10 billion pulses. The system includes a charging capacitor bank, a fast charger for charging the charging capacitor bank in time periods of less than 0.5 seconds. A voltage control circuit is provided for controlling the charging voltage capacitor to within less than 0.5 percent of desired values. The system includes a magnetic compression circuit for creating, compressing in duration and amplifying voltage pulses. A trigger circuit discharges the charging capacitor bank into the pulse compression circuit so as to produce EUV or x-ray light pulses with a timing accuracy of less than 10 ns.
    Type: Application
    Filed: April 10, 2002
    Publication date: November 7, 2002
    Inventors: Richard M. Ness, Igor V. Fomenkov, William N. Partlo
  • Patent number: 6448714
    Abstract: In a spark gap switch 12 of a pulse generating circuit 2 of a plasma generator T, an intermediate electrode 15, which is not connected to any electrical source, is disposed at a nearly middle position between a first spherical electrode 13 and a second spherical electrode 15 so as to hold respective spark gaps to the both spherical electrodes 13, 14. Further, in the spark gap switch 12, switching operation is performed between the both spherical electrodes 13, 14 by causing two-stage spark discharge in the first spark gap between the first spherical electrode 13 and the intermediate electrode 15, and in the second spark gap between the intermediate electrode 15 and the second spherical electrode 14. Thus, in the spark gap switch 12, pulse voltage of high voltage and high frequency is stably generated for a long time, and further the spark gap switch 12 may be made compact.
    Type: Grant
    Filed: December 2, 1999
    Date of Patent: September 10, 2002
    Assignee: Nippon Paint Co., Ltd.
    Inventor: Kensuke Akutsu
  • Patent number: 6445134
    Abstract: A plasma pinch having an inner/outer coaxial tube arrangement, which nested tube arrangement yields a higher-performance pinchlamp than is capable with a single-tube configuration. Further, each tube contains a separate gas, the inner tube filled with Argon, and the outer tube filled with Helium. The inner/outer coaxial tube arrangement of the present invention facilitates the use of an inner tube to contain a volume of Argon gas as the working gas. The outer tube is coaxial with the inner tube, surrounding the inner tube with contained Helium gas. The configuration of an outer tube filled with Helium presents external pressures to the inner tube. The contained Helium gas in the outer tube, among other things, compresses and supports the walls of the inner tube, enabling the inner tube to be smaller in diameter than prior art plasma chambers, which chambers would shatter if made with as small a diameter as the present inner tube.
    Type: Grant
    Filed: November 30, 2000
    Date of Patent: September 3, 2002
    Assignee: Environmental Surface Technologies
    Inventor: John F. Asmus
  • Patent number: 6441569
    Abstract: A particle accelerator for inducing contained particle collisions. The particle accelerator includes two hollow dees of electrically conductive material which are separated and electrically insulated from each other. The dees are located between the poles of a strong magnet which generates a magnetic field through top and bottom sides of the dees. In addition, the dees are connected to an oscillator for providing an alternating voltage between the dees. The dees are located within a chamber containing a gas and/or vapor provided at a measurable pressure. Ions are accelerated in essentially spiral paths within the dees, and follow paths which may be both concentric and non-concentric with the dees whereby collisions are produced between accelerated ions and gas or vapor atoms contained within the chamber, as well as between pairs of accelerated ions following different paths.
    Type: Grant
    Filed: December 9, 1999
    Date of Patent: August 27, 2002
    Inventor: Edward F. Janzow
  • Publication number: 20020070673
    Abstract: An ionizing rod comprising a core having an outer surface with a plurality of ionizing points disposed along the outer surface of the core. The plurality of ionizing points are sufficiently dense upon the core surface such that air between the plurality of ionizing points and an object is sufficiently ionized to remove static charge from the object. The core material can be electrically conductive, insulative, or static dissipative. The methods to attach the ionizing points to the core include a pullover sleeve, made of fibers including ionizing points, and glue to adhere either fibers in electrical communication or not in electrical communication depending on whether conductive or non-conductive adhesive are employed. Alternative embodiments include a means for the ionizing charged particles to travel to ground or electrically charged and a grip.
    Type: Application
    Filed: May 15, 2001
    Publication date: June 13, 2002
    Inventor: William J. Larkin
  • Patent number: 6396211
    Abstract: A microwave discharge-type electrostatic accelerator propulsion device is provided that features a simplified system configuration, and accordingly, high reliability and low fabrication costs. A discharge chamber is formed by side walls that are made of an insulating material. An upstream acceleration electrode and a ring-shaped downstream acceleration electrode, which are supplied with power by an acceleration power supply, are provided upstream and downstream of the discharge chamber, respectively.
    Type: Grant
    Filed: July 14, 2000
    Date of Patent: May 28, 2002
    Assignee: Advanced Technology Institute, Ltd.
    Inventor: Shin Satori