Abstract: A semiconductor failure analysis device includes an analysis part that analyzes a failure place in a semiconductor device; a marking part that irradiates the semiconductor device with laser light; a device arrangement part in which a wafer chuck, which holds the semiconductor device and on which an alignment target is provided, moves relative to the analysis part and the marking part; and a control part that outputs commands. The control part moves the wafer chuck to a position at which the analysis part is capable of taking an image of the alignment target, then outputs an alignment command that causes the marking part to be aligned with the analysis part with the alignment target as a reference, and irradiates the semiconductor device with laser light in a state in which a positional relationship between the marking part and the analysis part is maintained.

Abstract: An apparatus for testing a wafer or chip comprising a photonic integrated circuit comprises: an electrical signal interface module comprising an array of movable conducting structures; a photonic signal interface module attached to the electrical signal interface module, the photonic signal interface module comprising one or more optical fiber interfaces, and a first set of grating couplers arranged over at least a first plane of the photonic signal interface module; and one or more electrical signal connections between the electrical signal interface module and the photonic signal interface module.

Abstract: A phased array LiDAR transmitting chip of multi-layer materials includes: a first material structure layer and an SOI silicon waveguide structure layer, a rear end of the first material structure layer and a front end of the SOI silicon waveguide structure layer form a coupling connection structure. The first material structure layer includes an input coupler and a beam splitter. The input coupler is optically connected to the beam splitter. The beam splitter is optically connected to the SOI silicon waveguide structure layer through the coupling connection structure. The input coupler couples input light to the chip. The beam splitter split a light wave coupled to the chip. The coupling connection structure couples each split light wave to a silicon waveguide in the SOI silicon waveguide structure layer. A non-linear refractive index of a first material in the first material structure layer is lower than that of a silicon material.

Abstract: There is provided an optical waveguide constituted by a core made of a semiconductor and formed on a substrate. A grating coupler is provided at one end of the optical waveguide. Further, a reflecting portion formed on the optical waveguide by being optically coupled to the optical waveguide is provided at the other end of the optical waveguide. The optical waveguide constituted by the core includes a light intensity modulation unit that modulates an intensity of guided light in the optical waveguide. The light intensity modulation unit is constituted by a variable optical attenuator.

Abstract: A device for reactive power compensation in a high-voltage network. A high-voltage connection is provided for each phase of the high-voltage network. Each high-voltage connection is connected to a first high-voltage winding surrounding a first core portion and to a second high-voltage winding surrounding a second core portion. The core portions are part of a closed magnetic circuit. Low-voltage ends of each high-voltage winding can be connected to at least one saturation switching branch which is configured to saturate the core portions and has actuatable power semiconductor switches, which are actuated by a control unit. Each saturation switching branch has at least one two-pole submodule with a bridge circuit having power semiconductor switches and a DC voltage source. Depending on the actuation of the power semiconductor switches, the DC voltage source can either be connected in series to at least one high-voltage winding or can be bridged.

Abstract: The present invention provides a semiconductor film layer inspection apparatus (10) for detecting the electrical characteristics of a semiconductor film layer (30) formed on one surface of a substrate (20) and including an oxide semiconductor layer (31), and a detection unit used therein. The apparatus includes a base unit (40), a detection unit (200) and a carrier generator (300 300a and 300b). The detection unit (200) includes: a detection probe pin (230) and a detection probe module (202). The detection probe pin (230) includes a detection probe pin body (231) and a detection probe pin contactor unit (233). The detection probe pin contactor unit at least partially forms a plurality of independently detectable and operable segmented pin contactor unit blocks.

Abstract: Example embodiments relate to controlling detection time in photodetectors. An example embodiment includes a device. The device includes a substrate. The device also includes a photodetector coupled to the substrate. The photodetector is arranged to detect light emitted from a light source that irradiates a top surface of the device. A depth of the substrate is at most 100 times a diffusion length of a minority carrier within the substrate so as to mitigate dark current arising from minority carriers photoexcited in the substrate based on the light emitted from the light source.

Abstract: An electro-optical circuit board can provide probe card functionality. The electro-optical circuit board includes at least one electrical conductor track and at least one optical beam path.

Abstract: In an inspection apparatus for inspecting an inspection target device formed on an inspection object, the inspection target device is a back-illuminated imaging device into which light is incident from a rear surface opposite to a side of a wiring layer. The inspection apparatus includes a stage having the inspection object placed such that the inspection object faces the rear surface. The stage includes a light transmitter made of a light-transmissive material. The inspection object is placed on the light transmitter below which a light illuminator is disposed. The light illuminator includes a flat light guide plate having a facing surface facing the inspection object. A light source is provided laterally outside the light guide plate configured to diffuse light emitted from the light source incident from a side end surface of the light guide plate, and to emit the light as planar light from the facing surface.

Abstract: A structure and method for the wafer level testing of interposer-based photonic integrated circuits is described that includes the formation of an upturned mirror structure and the method of utilizing the interposer-based mirror structure for electrical and optical testing of optoelectrical circuits that include emitting components such as lasers, detecting components such as photodetectors, and both emitting and detecting components. Electrical activation of the optoelectrical emitting or sending devices and the subsequent detection and measurement of the optical signals in detecting or receiving devices provides information on the operability or functionality of the PIC on the die at the wafer level, prior to die separation or singulation, using the electrical and optical components of the PIC circuit.

Abstract: A method for the testing of optoelectronic chips which are arranged on a wafer and have electrical interfaces in the form of contact pads and optical interfaces which are arranged to be fixed relative thereto in the form of optical deflection elements, e.g., grating couplers, with a specific coupling angle. The wafer is adjusted in three adjustment steps with one of the chips relative to a contacting module such that the electrical interfaces of the chip and contacting module contact one another, and the optical interfaces of the chip and contacting module occupy a maximum position of the optical coupling.

Abstract: Methods and apparatus for pre-treating semiconductor wafers before edge trimming to enhance wafer edge quality prior to thinning the semiconductor wafers from an initial thickness, and increasing yield post-thinning of the pre-treated, edge trimmed semiconductor wafers. An apparatus includes a stage configured to receive one of a device wafer or a carrier wafer having a device wafer mounted thereto thereon, a laser tool located above the stage and oriented to direct a laser beam downwardly toward the stage, and a vertically movable blade rotatable about a horizontal axis along a radius from a vertical axis at a center of the device wafer and positionable proximate to and radially inward of an outer periphery of the device wafer.

Abstract: Example embodiments relate to controlling detection time in photodetectors. An example embodiment includes a device. The device includes a substrate. The device also includes a photodetector coupled to the substrate. The photodetector is arranged to detect light emitted from a light source that irradiates a top surface of the device. A depth of the substrate is at most 100 times a diffusion length of a minority carrier within the substrate so as to mitigate dark current arising from minority carriers photoexcited in the substrate based on the light emitted from the light source.

Abstract: An inspection apparatus includes a stage on which a substrate is placed, a cooler, a probe card, a light irradiator and a controller. The cooler cools the substrate placed on the stage. The probe card has probes to be in contact with the substrate to supply electric power. The light irradiator irradiates light to an upper surface of the substrate, opposite to a bottom surface of the substrate placed on the stage. Further, the controller controls the light irradiator.

Abstract: An inspection apparatus for inspecting a backside irradiation type imaging device formed on an inspection object includes: a stage on which the inspection object is mounted such that the stage faces a rear surface of the backside irradiation type imaging device, wherein the stage includes: a transmitter including a flat plate formed of a light transmitting material, and configured to mount the inspection object on the transmitter; and a light emitter disposed at a location facing the inspection object with the transmitter interposed between the light emitter and the inspection object, and configured to emit light toward the transmitter, and wherein the transmitter transmits the light from the light emitter while diffusing the light.

Abstract: The present invention suggests an electrical connection device having a noise blocking and damage preventing structure by comprising: a receptacle consisting of a plurality of conductive terminals and a plurality of conductive members; and a connector comprising a plurality of connector terminals corresponding to the plurality of conductive terminals.

Abstract: The present invention discloses a method for detecting open phase of a startup/standby transformer based on optical CT. A startup/standby transformer in a power plant is in a no-load condition for a long time as a standby power supply. Once a single-phase open phase fault occurs, there is no significant change in the voltage phasor and voltage sequence component of each side. If not found in time, the defect may pose a great threat to the safe operation of the power plant. In the present invention, the optical CT is used to detect a three-phase current of the high-voltage side of the startup/standby transformer. If the current satisfies an open phase criterion, it is determined that an open phase fault occurs, and then, an alarm signal is given after a delay and an operator is informed to handle the fault in time. Therefore, the operation reliability of the startup/standby transformer system in the power plant is enhanced.

Abstract: A first light source is directed at an outer surface of a workpiece in an inspection module. The light from the first light source that is reflected from the outer surface of the workpiece is directed to the camera via a first pathway. The light from the first light source transmitted through the workpiece is directed to the camera via a second pathway. A second light source is directed at the outer surface of the workpiece 180° from that of the first light source. The light from the second light source that is reflected from the outer surface of the workpiece is directed to the camera via the second pathway. The light from the second light source transmitted through the workpiece is directed to the camera via the first pathway.

Abstract: A Scanning Time-Resolved Emission (S-TRE) microscope or system includes an optical system configured to collect light from emissions of light generated by a device under test (DUT). A scanning system is configured to permit the emissions of light to be collected from positions across the DUT in accordance with a scan pattern. A timing photodetector is configured to detect a single photon or photons of the emissions of light from the particular positions across the DUT such that the emissions of light are correlated to the positions to create a time-dependent map of the emissions of light across the DUT. The scanning system is configured to update the time-dependent map of the emissions based on combinations of the emissions of light at certain locations.

Abstract: There are provided a system and a method of use thereof for executing a manufacturing process. For example, a method can include executing, by a system configured to drive the manufacturing process, a set of manufacturing functions based on a digital model of a first part. The method can include fetching, by the system, from an in-field scoring system, performance data relating to a second part. The method can further include constructing the digital model based on the performance data relating to the second part. The method can further include generating, based on the digital model, a forecast representative of a performance of the first part and generating the set of manufacturing functions based on the digital model and the forecast. The method further includes manufacturing the first part according to the set of manufacturing functions.

Abstract: A method for photoluminescence measurement of a sample that includes a front face and a rear face linked by a contour, the sample resting, via the rear face of same, on a receiving face of an active base. The sample also includes a first region partially delimited by the contour and that emits a photoluminescence signal of an intensity, referred to as the first intensity, that is lower at any point to the average intensity of the photoluminescence signal of the sample, referred to as the reference intensity, the active base emitting a photoluminescence signal of an intensity, referred to as the secondary intensity, that is at least equal to the reference intensity. The active base includes an edge that is set apart from the contour by an overlap distance and that delimits, with said contour, a peripheral section of the active base.

Abstract: The present invention provides an electrically isolated acquisition of a measurement signal by means of a measurement probe. For this purpose, a probe arrangement is provided with a probe head for electrically measuring a signal. The probe head is coupled to a probe coupler via optical links. In particular, optical links are used for power supply of the probe head and for forwarding optical signals corresponding to the measured electrical signal.

Abstract: An optical testing circuit on a wafer includes an optical input configured to receive an optical test signal and photodetectors configured to generate corresponding electrical signals in response to optical processing of the optical test signal through the optical testing circuit. The electrical signals are simultaneously sensed by a probe circuit and then processed. In one process, test data from the electrical signals is simultaneously generated at each step of a sweep in wavelength of the optical test signal and output in response to a step change. In another process, the electrical signals are sequentially selected and the sweep in wavelength of the optical test signal is performed for each selected electrical signal to generate the test data.

Abstract: A battery connection unit includes a first branch with a first branch switch adapted to connect a first battery to at least one of a second battery and a vehicle load; and a second branch with a second branch switch connected in parallel with the first branch. A first measurement switch is connected between the first branch and a storage element to enable/disable charging. A second measurement switch is connected between the second branch and the storage element. A processor is programmed to: disable at least one of the first branch and the second branch; enable at least one of the first measurement switch and the second measurement switch to charge the storage element with leakage current; and generate an output signal indicative of a switch fault in response to a storage element voltage associated with the leakage current exceeding a reference voltage within a predetermined time period.

Abstract: A reflectometer for allowing a test of a device. The reflectometer comprises a source of pulsed radiation, a first photoconductive element configured to output a pulse in response to irradiation from the pulsed source, a second photoconductive element configured to receive a pulse, a transmission line arrangement configured to direct the pulse from the first photoconductive element to the device under test and to direct the pulse reflected from the device under test to the second photoconductive element, and a termination resistance provided for the transmission line configured to match the impedance of the transmission line.

Abstract: An LED wafer, an LED wafer detection device and an LED wafer detection method are provided. The LED wafer includes a wafer base, a plurality of LED chips, a plurality of positive test circuit layers, a plurality negative test circuit layers, a plurality of positive test contacts, and a plurality of negative test contacts. Each LED chip has a positive contact and a negative contact respectively electrically connected to the corresponding positive test circuit layer and the corresponding negative test circuit layer. The positive test contacts are respectively electrically connected to the positive test circuit layers, and the negative test contacts are respectively electrically connected to the negative test circuit layers. Whereby, when inputting an electric current into the positive test contacts, and then outputting the electric current from the negative test contacts, each LED chip is excited to generate a light source.

Abstract: Methods and apparatus (100) for profiling a beam of a light emitting semiconductor device. The apparatus comprises a light emitting semiconductor device (102) comprising an active region (108) formed on a substrate (104) and configured to generate light when a suitable electrical current is applied to contacts on an upper surface of the device and a light emitting surface (110) defined by a lower surface of the substrate opposite the contacts. The apparatus further comprises a transmission medium (112) comprising a first surface (114) in contact with at least part of the light emitting surface of the semiconductor device and a diffusion surface (116), opposite the first surface, and configured to diffuse light emitted from the micro-LED and transmitted through the transmission medium.

Abstract: A method for characterizing an integrated circuit that selecting at least two devices from an integrated circuit for measuring light emission, wherein each of the at least two devices have experienced a different level of stress, applying power to the integrated circuit, and measuring the light emission from the at least two devices. The method also includes comparing the light emission that is measured from the at least two devices, wherein a difference between the light emission that is measured from the at least two devices greater than a predetermined ratio indicates that at least one of the devices from the at least two devices has a below specification performance.

Abstract: Methods and systems for discovery of defects of interest (DOI) buried within three dimensional semiconductor structures and recipe optimization are described herein. The volume of a semiconductor wafer subject to defect discovery and verification is reduced by storing images associated with a subset of the total depth of the semiconductor structures under measurement. Image patches associated with defect locations at one or more focus planes or focus ranges are recorded. The number of optical modes under consideration is reduced based on any of a comparison of one or more measured wafer level defect signatures and one or more expected wafer level defect signatures, measured defect signal to noise ratio, and defects verified without de-processing. Furthermore, verified defects and recorded images are employed to train a nuisance filter and optimize the measurement recipe. The trained nuisance filter is applied to defect images to select the optimal optical mode for production.

Abstract: An image generating device is an apparatus for acquiring an image which shows a direction of an electric current flowing through a semiconductor device. The image generating device comprises a signal application unit configured to apply a stimulation signal to the semiconductor device, a magnetic detection unit configured to output a detection signal based on a magnetism generated by an application of the stimulation signal, and an image generation unit configured to generate phase image data comprising a phase component which indicates a phase difference based on the phase difference between the detection signal and a reference signal which is generated based on the stimulation signal and generate an electric current direction image which shows the direction of the electric current based on the phase image data.

Abstract: In accordance with an embodiment of the present invention, an optical switch includes a photoconductor body including a first edge and an opposite second edge, a first end and an opposite second end. The first edge is configured to receive an electrical input signal and the second edge is configured to deliver an electrical output signal. The photoconductor body is configured to have an electrically ON state that is activated by an optical signal and an electrically OFF state that is activated by an absence of the optical signal. A direction from the first end to the second end defines a longitudinal direction. The direction from the first edge to the second edge defines a first direction that is orthogonal to the longitudinal direction. A first dimension between the first edge and the second edge along the first direction decreases from the first end to the second end.

Abstract: A method includes loading the semiconductor structure on a stage; providing a detector disposed above the semiconductor structure and the stage; applying a voltage to the semiconductor structure; identifying a portion of the semiconductor structure at a temperature substantially greater than a predetermined threshold by the detector; rotating the stage and recording a rotation of the stage after identifying the portion of the semiconductor structure; and deriving a position of the portion of the semiconductor structure based upon the rotation of the stage.

Abstract: A three-dimensional measurement apparatus includes: projecting means for projecting, onto a measurement target, patterned light having a two-dimensionally coded pattern in which a plurality of types of words each having a different two-dimensional structure and being distinguishable from each other are two-dimensionally arranged; capturing means for capturing the measurement target onto which the patterned light is projected; and calculating means for calculating a three-dimensional position of a target pixel of the image from an image captured by the capturing means, and the two-dimensionally coded pattern is two-fold symmetrical. The two-dimensionally coded pattern is a pattern in which a predetermined word is repeated in the column direction for each column.

Abstract: A system and method for assessing performance of a plurality of perovskite optoelectronic devices are disclosed. The system comprises a chamber, a light source, a switch board for allowing selection of a device among a plurality of devices in the chamber for measurement; a DC voltage supply for applying voltage to the device, a source/measure unit (SMU) for measuring current of the device; and a computer implemented with a software program including computer executable instructions to control at least the SMU, the DC voltage supply, the switch board, and the light source. The computer-implemented method for the performance assessment by using the system includes obtaining at least one of first current-versus-voltage (I-V) data according to a first procedure and second I-V data according to a second procedure for analyzing hysteresis behavior of the device.

Abstract: A reader suitable for reading data from a printed memory device attached to a curved surface includes a flexible wiring assembly that can be repositioned from a first position having a first profile into a second position having a second profile. In the first position, electrical contacts of the reader do not electrically couple with contact pads of the printed memory device, while in the second position the electrical contacts of the reader electrically couple to the contact pads of the printed memory. In one implementation, the flexible wiring assembly includes a flexible underlayer that supports the plurality of electrical contacts. In another implementation, the flexible wiring assembly includes a rigid first portion and a rigid second portion that pivot about a pivot point.

Abstract: A method for fabricating a semiconductor structure includes when a chip under test releases an ESD current, detecting position information of photons emitted from the chip under test due to releasing of the ESD current; acquiring an image of an ESD path based on the detected position information of the photons; and determining whether the ESD path corresponding to the chip under test is normal based on the image of the ESD path and a layout image of the chip under test.

Abstract: Provided is a battery monitoring device for a battery including a plurality of battery stacks. The battery monitoring device includes a plurality of monitoring modules, a power supply device, and a determination module. The power supply device includes a plurality of first power lines, a first switch, a first capacitor, a second power line, a plurality of second switches, and a plurality of second capacitors. The determination module is configured to determine a state of power supply from the power supply device to the monitoring modules. Each of the first power lines includes a first positive electrode line and a first negative electrode line, and is connected to the monitoring modules so as to supply power to the monitoring modules. The second power line includes a second positive electrode line and a second negative electrode line, and is configured to receive a predetermined amount of power.

Abstract: Various approaches to can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation.

Abstract: The invention achieves uniform image quality for every transfer regardless of a moisture content on a surface of a paper sheet when a plurality of transfer processes is to be made on a single paper. A copier (1A) is provided with a optical sensor (20) which includes at least one light source, illuminates a paper sheet (P) with light, receives the light reflected from the paper sheet (P), and measures the received light intensity. Before each of a plurality of transfer processes, the copier (1A) calculates a moisture content on a surface of the paper sheet (P) from the light intensity measured by the optical sensor (20), and sets a transfer condition of a transfer device (15) based on the calculated moisture content on the surface of the paper sheet (P).

Abstract: An infrared (IR) emitter projects a spherical IR pattern. The IR emitter may include one or more IR lasers to produce two IR laser beams, two beam expanders, two diffraction screens to each produce diffracted radiation, a top wide angle lens, and a bottom wide angle lens. The wide angle lenses may each receive diffracted radiation from a respective one of the diffractions screens and may emit a spherical IR pattern including a plurality of longitudinal lines, each longitudinal line including a first portion of the spherical IR pattern emitted from the top wide angle lens and a second portion of the spherical IR pattern from the bottom wide angle lens. The IR emitter may be part of an object detection system in an aerial vehicle.

Abstract: A system for characterizing a semiconductor sample is disclosed. The system comprises a measurement subsystem, a data analysis subsystem, and a statistical analysis subsystem coupled to each other via an interconnection. The measurement subsystem excites a semiconductor sample by shining light on one or more points in the semiconductor sample to generate electron hole pairs, which creates a change in conductivity of the semiconductor sample. The measurement subsystem measures one or more voltage decay curves corresponding to the one or more points in the semiconductor sample based on the changes in conductivity, and transmits the measured voltage decay curves to the data analysis subsystem. The data analysis subsystem extracts one or more normalized decay curves from the transmitted measured voltage decay curves, which the data analysis subsystem then transmits to the statistical analysis subsystem. The statistical analysis subsystem analyzes the transmitted normalized decay curves.

Abstract: Semiconductor metrology systems based on directing radiation on a wafer, detecting second harmonic generated (SHG) radiation from the wafer and correlating the second harmonic generated (SHG) signal to one or more electrical properties of the wafer are disclosed. The disclosure also includes parsing the SHG signal to remove contribution to the SHG signal from one or more material properties of the sample such as thickness. Systems and methods described herein include machine learning methodologies to automatically classify obtained SHG signal data from the wafer based on an electrical property of the wafer.

Abstract: A system for atomic force microscopy in which a sharp electrode tip of an flexing probe cantilever is positioned closely adjacent a sample being probed for its electrical characteristics. An optical beam irradiates a portion of the sample surrounding the probe tips and is modulated at a radio or lower modulation frequency. In one embodiment, a reference microwave signal is incident to the electrode tip. Microwave circuitry receives a microwave signal from the probe tip, which may be the reflection of the incident signal. Electronic circuitry processes the received signal with reference to the modulation frequency to produce one or more demodulated signals indicative of the electronic or atomic properties of the sample. Alternatively, the optical beam is pulsed and the demodulated signal is analyzed for its temporal characteristics. The beam may non-linearly produce the microwave signal. Two source lasers may have optical frequencies differing by the microwave frequency.

Abstract: This disclosure provides techniques for assessing quality of a deposited film layer of an organic light emitting diode (“OLED”) device. An image is captured and filtered to identify a deposited layer that is to be analyzed. Image data representing this layer can be optionally converted to brightness (grayscale) data. A gradient function is then applied to emphasize discontinuities in the deposited layer. Discontinuities are then compared to one or more thresholds and used to ascertain quality of the deposited layer, with optional remedial measures then being applied. The disclosed techniques can be applied in situ, to quickly identify potential defects such as delamination before ensuing manufacturing steps are applied. In optional embodiments, remedial measures can be taken dependent on whether defects are determined to exist.

Abstract: Methods and systems using low temperature thermo-luminescence to measure donor ionization energies in luminescence semiconductors are described.

Abstract: Automated test equipment capable of performing a high-speed test of semiconductor devices is presented. The automated test equipment apparatus comprises a computer system comprising a tester processor, wherein the tester processor is communicatively coupled to a plurality of FPGA components. Each of the plurality of FPGA components is coupled to a memory module and comprises: an upstream port operable to receive commands and data from the tester processor; a downstream port operable to communicate with a respective DUT from a plurality of DUTs; and a plurality of hardware accelerator circuits, wherein each of the accelerator circuits is configured to communicate with one of the plurality of DUTs. Each of the plurality of hardware accelerator circuits comprises a pattern generator circuit configurable to automatically generate test pattern data and a comparator circuit configured to compare data.

Abstract: An image generation apparatus is an image generation apparatus that generates an image based on measurement light from the semiconductor device, and the image generation apparatus includes an optical sensor that detects the measurement light, an optical sensor power supply that applies a constant voltage to the optical sensor to supply a current to the optical sensor, a current detector that generates a pattern signal according to magnitude of the current supplied to the optical sensor by the optical sensor power supply, and a control device that generates a pattern image based on the pattern signal.

Abstract: A reflectometer for allowing a test of a device, the reflectometer comprising: a source of pulsed radiation; a first photoconductive element configured to output a pulse in response to irradiation from said pulsed source; a second photoconductive element configured to receive a pulse; a transmission line arrangement configured to direct the pulse from the first photoconductive element to the device under test and to direct the pulse reflected from the device under test to the second photoconductive element; and a termination resistance provided for said transmission line configured to match the impedance of the transmission line.

Abstract: There is provided a technique for easily inspecting the modification state of a film in a semiconductor substrate. A modification processing device modifies a film by irradiating a semiconductor substrate with pulsed light emitted from a light irradiation part. The modification processing device includes an electromagnetic wave detection part for detecting an electromagnetic wave pulse including a millimeter wave or a terahertz wave radiated from the semiconductor substrate in response to the irradiation with the pulsed light. The modification processing device further includes a modification determination part for determining the modification state, based on the intensity of the electromagnetic wave pulse.

Abstract: The present application discloses an array substrate having a plurality of semiconductor elements and a plurality of test electrodes. Each of the plurality of semiconductor elements comprises a plurality of terminals, each of which is electrically connected to a different test electrode. At least one of the plurality of test electrodes is electrically connected to at least two different semiconductor elements.