Abstract: The N channel field effect transistor (NFET) of the inverting output stage of a LSDL gate is split into a large NFET and a small NFET. The large NFET is coupled to a feedforward pulse so that it is turned ON only when the inverting output is a logic one. When the inverting output is a logic one, another inverting stage turns ON if the dynamic node evaluates to a logic zero. The dynamic node is inverted and coupled to the large NFET on the inverting output stage thus quickly pulling the inverting output to a logic zero. The small NFET is turned ON as a keeper device through the normal logic path. If the inverting data output is a logic zero the feedforward pulse is not generated. By making the largest NFET a pulsed device the other FETs are reduced in size resulting in leakage and switching power savings.

Abstract: A domino logic circuit is configured to reduce power consumption. In a first embodiment, a sleep switch grounds the dynamic node during sleep mode. In a second embodiment, a low-swing circuit at the output reduces the output and keeper transistor gate voltage swings. A third embodiment combines those two techniques.

Abstract: A NULL convention-threshold gate receives a plurality of inputs, each having an asserted state and a NULL state. The threshold gate switches its output to an asserted state when the number of asserted inputs exceeds a threshold number. The threshold gate switches its output to the NULL state only after all inputs have returned to NULL. Signal states may be implemented as distinct current levels.

Abstract: An integrated device having a pad receiving, in a standard operative condition, an input signal having a first value and, in a test operative condition, a test voltage having a second value higher than the first value; an input stage connected to the pad and including an electronic component having a first terminal connected to the pad; a third-level detecting stage connected to the pad and supplying a logic third-level signal having a first level in presence of the input signal and a second level in presence of the test voltage; and a selector connected to a second terminal of the electronic component and structured to connect the second terminal to a reference potential in the presence of the first logic level of the third-level signal and to a biasing voltage higher than the reference potential and lower than the second value in the presence of the second logic level of the third-level signal.

Abstract: LSDL logic is provided with circuitry that has logic controls to provide two modes of operation. The half latch and the PFET that normally forms the keeper function on the dynamic node are modified. The inverter function of the series connected PFET and NFET have their corresponding positive and negative power supply terminals coupled to logic gates. In this way, the inverter may be turned ON so that the half latch functions as a keeper or it may be turned OFF to remove it from operating at all in the mode where the LSDL logic circuit needs to operate with a fast pulse clock. Likewise, the positive supply voltage may be removed while allowing the NFET device to operate to turn ON the PFET pull-up device for burn-in operation.

Abstract: A latchless dynamic asynchronous digital pipeline circuit provides decoupled control of pull-up and pull-down. Using two decoupled input, a stage is driven through three distinct phases in sequence: evaluate, isolate and precharge. In the isolate phase, a stage holds its outputs stable irrespective of any changes at its inputs. Adjacent pipeline stages are capable of storing distinct data items without spacers.

Abstract: Clocked half-rail differential logic circuits with single-rail logic and sense amplifier of the invention do not include complementary logic elements. According to the invention, the complementary logic function of the prior art is replaced by a single transistor appropriately sized to provide the complementary output. In addition, the clocked half-rail differential logic circuits are activated by a delayed clock and include a sense amplifier circuit that is triggered by a second delayed clock. The addition of the sense amplifier circuit, and second delayed clock signal, allows the sense amplifier circuit to act as the driver and therefore there is no need for increasing the size of the differential logic block to provide a driver function.

Abstract: A logic circuit section comprises a plurality of first transistors of a first conductivity type and a plurality of second transistors of a second conductivity type, and is controlled according to an input signal. A third transistor of the first conductivity type supplies power to the logic circuit section. A fourth transistor of the second conductivity type is connected to the output terminal of the logic circuit section, and sets a level at the output terminal when the logic circuit section does not operate. The first and second transistors are controlled by a first control signal, and the third transistor is controlled by a second control signal different from the first control signal.

Abstract: A bulk input differential logic circuit. The circuit outputs a large signal high enough to assert a logic High and Low by variations of the threshold voltage controlled by the bulk input signal and amplification of the sense amplifier. A boost circuit is disposed on the bulk input terminal, which may receive multiple bulk input signals. This makes it possible to use fewer circuit elements and smaller circuit area for a complicated logic operation.

Abstract: A driver structure for an I/O buffer circuit is disclosed. The driver structure includes a pre-push-pull driver and a post-push-pull driver. A delay circuit along is connected in series between the input signals of the pre-push-pull driver and the post-push-pull driver. After a delay time following a transition of the input signal, the circuit operation of the post-push-pull driver is turned off before the amplitude of the output signal reaches its maximum overshooting. This changes the output conductivity to inhibit the overshooting in the output signal, preventing power bounce and ground bounce at the receiving end.

Abstract: In order to provide a semiconductor device having a means for operating normally even when the amplitude of a signal voltage is smaller than the amplitude of a power source voltage, a correcting means is provided before a digital circuit to be operated normally. As for a signal outputted from the correcting means, when a transistor in the objective digital circuit is required to be turned OFF, the correcting means outputs a corresponding signal, namely a first power source potential. At this time, the transistor is turned OFF. On the other hand, when the transistor is required to be turned ON, the correcting means outputs a first input potential. Consequently, the objective digital circuit is turned OFF when it is required to be in an OFF state while turned ON when it is required to be in an ON state. Thereby, the objective digital circuit can be normally operated.

Abstract: Disclosed is a semiconductor integrated circuit realizing improved operating speed, reduced power consumption in an active mode, reduced power consumption in a standby mode, and reduced area of a chip. A first logic gate using a first pair of potentials VDDL, VSSL having a relatively small potential difference as an operation power source and a second logic gate using a second pair of potentials VDDH, VSSH having a relatively large potential difference as an operation power source commonly use substrate potentials VBP, VBN of MIS transistors. The second logic gate has a relatively high driving capability, and the first logic gate can operate on relatively low power. The MIS transistor has a threshold voltage which increases by a reverse substrate bias and decreases by a forward substrate bias. By commonly using the substrate potential, even in the case where different substrate bias states are generated at both of the logic gates, MOS transistors of the logic gates can be formed in the common well region.

Abstract: A semiconductor integrated circuit including a logic circuit is disclosed, in which the decoder area can be reduced and which has an effect of reduction of the whole chip size. Among the MOS FETs included in the logic circuit, those other than a MOS FET for supplying electric charges via an output terminal have threshold voltage values lower than the threshold voltage value of the MOS FET for supplying electric charges. The direction of the gate width of each MOS FET is perpendicular to the direction along which word lines extend in the memory cell areas, and all of the MOS FETs are aligned in a direction perpendicular to the direction along which the word lines extend.

Abstract: A flip-flop circuit that includes a set of three p-channel connectors connected in parallel between a supply voltage (Vdd) and a first control node. The circuit further includes three n-channel transistors connected in series between the first control node and Vss. The first control node controls the gate of a p-channel transistor connected between Vdd and an output node. A set of n-channel transistors is connected between the output node and ground. The gates of these transistors are controlled by the clock signal, a delayed clock signal, and an inverted copy of the data signal, which is provided, via a control inverter, to a second control node. The first control node drives the output node to a first state and the second control node drives the output node to a second state. The first and second control nodes are preferably decoupled.

Abstract: An intregrated circuit includes at least one I/O buffer. This buffer includes a first supply logic portion, connectable to a core voltage supply and an I/O voltage supply, and a second I/O buffer portion adapted to receive an activation signal from the first supply logic portion. The first supply logic portion is modified to act to prevent the output of an activation signal until the core voltage is supplied to the integrated circuit.

Abstract: The present invention is an apparatus and method for eliminating parasitic bipolar transistor action in a Silicon on Insulator (SOI) Metal Oxide Semiconductor (MOS) device. In accordance with the invention a SOI electronic device and an active discharging device coupled to said SOI electronic device is provided to deactivate the parasitic bipolar transistor. The parasitic bipolar transistor action is deactivated by controlling the conduction of an active discharging device, said active discharging device being coupled to said SOI device.

Abstract: A circuit and method for accelerating bus line communication in an integrated circuit is disclosed. High speed transmission of signals along a bus line is achieved by driving a series of bus line segments with their own bi-directional bus amplification circuits. Because each bus line segment has less capacitive loading than longer non-segmented bus lines, voltage reversal, or data inversion of a pair of complementary lines of a bus line segment is accomplished at high speed. Each bi-directional bus amplification circuit includes a precharge circuit for precharging each complementary pair of lines to known logic levels, and a drive circuit for changing the logic level of each line.

Abstract: The SOI dynamic logic circuits comprises series and parallel pull-down networks (260) that comprise MOS transistors configured in series or parallel. Each pull down network comprises at least one PMOS transistor (270).

Abstract: A variable keeper strength based process-compensated dynamic circuit and method provides a robust digital way to overcome the intrinsic parameter variation present in manufactured dies. Using a process-compensated dynamic circuit, the wide robustness and delay distribution becomes narrower which improves performance without sacrificing worst-case robustness. The strength of the keeper is programmed depending on the amount of die leakage. The keeper will have an optimal strength for the best and worst case leakage, allowing better performance with improved worst-case robustness.

Abstract: A new CMOS dynamic logic family is based on parallel dynamic logic concept, avoiding stacked evaluation transistors. The basic configuration for the logic family is a pair of clock transistors including a NMOS and a PMOS transistor having parallel logic transistors connected between the NMOS and PMOS clock transistors. The parallel-connected transistors have gates for logic inputs and an output originating from one of a commonly connected source or drain. The family may provide NOR, NAND, OR, and AND. The family also includes BUF and INV. The BUF logic gate is realized with opposing NMOS and PMOS and an INV, while the INV uses either a single NMOS or PMOS transistor in place of the parallel-connected transistors. A speed enhanced skewed static logic gate is also provided. The speed enhanced gate uses a plurality of PMOS transistors and a plurality of NMOS transistors matched and joined as a plurality of separate gate inputs.

Abstract: A dynamic logic circuit (30). The dynamic logic circuit comprises a precharge node (30PN) to be precharged to a precharge voltage (VDD) during a precharge phase and a conditional discharge path (30L, 30DT) connected to the precharge node. The conditional discharge path is operable, during an evaluate phase, to conditionally couple the precharge node to a voltage different than the precharge voltage. The dynamic logic circuit also comprises an output (OUT3) for providing a signal in response to a state at the precharge node. Lastly, the dynamic logic circuit comprises voltage maintaining circuitry (30KT1, 30KT2), coupled to the output, for coupling the precharge voltage to the precharge node during a portion of an instance of the evaluate phase when the conditional discharge path is not enabled during the instance of the evaluate phase.

Abstract: A logic circuit employs a shunt peaked technique to enhance the switching speed of the circuit without an increase in power dissipation. A differential logic gate implements a digital circuit function. The shunt peaked logic circuit includes two resistive and two inductive elements. For each differential output line, a resistive element is coupled in series to an inductive element so as to couple the circuit power supply voltage to a differential output line. Under this configuration, the bandwidth of the logic circuit is increased without an increase in power consumption. The logic circuit may be implemented using CML or ECL logic.

Abstract: A bi-direction voltage level translating switch that connects a higher voltage circuit to a lower voltage circuit without using a direction signal disclosed. The drive circuit for the gate of an MOS switch acts to clamp the lower voltage side of the translating switch limiting the lower voltage to a level compatible with the lower voltage circuitry connected to the lower voltage side. A pull up circuit is connected to the higher voltage side of the switch and further defines a threshold lower than the lower voltage. When the signal reaches the threshold the pull up circuit pull the higher voltage side up to the higher voltage. Again the drive on the gate of the switch prevents that higher voltage from reaching the lower voltage side. When the lower voltage side drives, through an on switch, the higher voltage side low, the pull up circuit is designed to be overcome by the lower voltage drive circuitry so that the higher voltage side goes low.

Abstract: A surfing pipelined logic circuit has a timing system which provides a timing signal sequentially to each of a plurality of logic blocks. The logic blocks are connected in a series and may have a linear configuration or a ring configuration. Each of the logic blocks has a latency which is variable in response to the timing signal. When the timing signal is not present, the latency is longer than a timing delay which occurs between the timing system applying the timing signal to the logic block and the timing signal applying the logic signal to a next one of the logic blocks. When the timing signal is present, the latency is shorter than the timing delay. The timing system may comprise a timing path carrying timing signals. The timing path may have a number of nodes connected to control inputs of corresponding ones of the logic blocks.

Abstract: Clocked half-rail differential logic circuits with single-rail logic and sense amplifier of the invention do not include complementary logic elements. According to the invention, the complementary logic function of the prior art is replaced by a single transistor appropriately sized to provide the complementary output. In addition, the clocked half-rail differential logic circuits are activated by a delayed clock and include a sense amplifier circuit that is triggered by a second delayed clock. The addition of the sense amplifier circuit, and second delayed clock signal, allows the sense amplifier circuit to act as the driver and therefore there is no need for increasing the size of the differential logic block to provide a driver function.

Abstract: The present invention provides a fault-tolerant inverter circuit, comprising a signal input point for receiving the input signals. A first inverter, the input end of the first inverter connects to the signal input point. A second inverter, the input end of the second inverter connects to the output end of the first inverter. A third inverter, the input end of the third inverter connects to the output end of the second inverter. A signal output point, and it is used to connect the output end of the third inverter. A first conducting wire, the two ends of which connect respectively to the signal input point of the first inverter and the output end of the second inverter. A second conducting wire, the two ends of which connect respectively to the outputting end of the first inverter and the signal output point. Therefore, the fault-tolerant inverter of the present invention provides fault-tolerance when an opening occurs in any conducting wire or transistor.

Abstract: Clocked half-rail differential logic circuits with sense amplifier and shut-off are activated by a delayed clock and include a sense amplifier circuit that is triggered by a second delayed clock and a shut-off device. The addition of the sense amplifier circuit, and second delayed clock signal allows the sense amplifier circuit to act as the driver and therefore there is no need for increasing the size of the differential logic network to provide a driver function. The addition of the shut-off device provides a half-rail differential logic circuit with shut-off that does not experience the large or “dip” experienced by prior art half-rail differential logic circuits and is therefore more power efficient.

Abstract: Clocked full-rail differential logic circuits with shut-off include a shut-off device. The addition of the shut-off device provides a full-rail differential logic circuit with shut-off that does not experience the “dip” experienced by prior art full-rail differential logic circuits and is therefore more power efficient. In addition, the present invention provides a full-rail differential logic circuit with shut-off that is more resistant to noise than prior art full-rail differential logic circuits.

Abstract: A method and apparatus that dynamically control an amount of offset current generated by a keeper device are provided. Further, a method and apparatus that use a temperature-controlled keeper device to dynamically optimize an evaluation performance of a dynamic circuit are provided. In particular, when IC temperature is relatively high, i.e., there is increased current leakage in the dynamic circuit, an amount of offset current output by the temperature-controlled keeper may be increased, thereby preventing a dynamic node of the dynamic circuit from being discharged, or otherwise adversely affected, by the increased current leakage. Alternatively, when the IC temperature is relatively low, i.e., there is decreased current leakage in the dynamic circuit, the amount of offset current output by the temperature-controlled keeper may be decreased, thereby ensuring that the offset current is not so large that it severely degrades the evaluation performance.

Abstract: The semiconductor integrated circuit of this invention includes a first transistor for setting a first node at a first logic level in accordance with a clock signal; an input circuit for setting the first node at a second logic level in accordance with an input signal; a second transistor for setting a second node at the first logic level when the first node is at the first logic level; a resistor device connected between the first node and the second node; a first driving transistor for receiving, as an input, potential of the second node and controlling whether or not an output node is set at the first logic level; and a second driving transistor for receiving, as an input, a signal at a logic level identical to the logic level of the first node and controlling whether or not the output node is set at the second logic level.

Abstract: A reverse biasing logic circuit is disclosed for limiting standby leakage electric current losses during circuit operation. The circuit includes a logic function circuit having one or more logic transistors that receive an input and perform a logic function operation to generate an output. A power source transistor connects to the logic function circuit and receives a control signal that changes node voltages of the one or more logic transistors between an active mode and a standby mode. During the standby mode, the power source transistor causes reverse biasing of at least one of the one or more logic transistors which prevents a leakage electric current flow between the power source transistor and the one or more logic transistors.

Abstract: A method and apparatus that dynamically control an amount of offset current generated by a keeper device are provided. Further, a method and apparatus that use a temperature-controlled keeper device to dynamically optimize an evaluation performance of a dynamic circuit are provided. In particular, when IC temperature is relatively high, i.e., there is increased current leakage in the dynamic circuit, an amount of offset current output by the temperature-controlled keeper may be increased, thereby preventing a dynamic node of the dynamic circuit from being discharged, or otherwise adversely affected, by the increased current leakage. Alternatively, when the IC temperature is relatively low, i.e., there is decreased current leakage in the dynamic circuit, the amount of offset current output by the temperature-controlled keeper may be decreased, thereby ensuring that the offset current is not so large that it severely degrades the evaluation performance.

Abstract: The voltage translator uses a PMOS transistor connected to a positive voltage source and a wordline, an NMOS transistor connected to a voltage source lower than the earth potential and a wordline as output stages, and has a PMOS transistor having a feedback function which is connected to the positive voltage source and an NMOS transistor having a feedback function which is connected to a voltage source lower than the earth potential. In the voltage translator, not only the positive voltage but a voltage lower than the earth potential as well is supplied to a selected wordline.

Abstract: The present invention is directed to simplify a circuit for fixing an output logic of a logic gate while suppressing a subthreshold current. A logic circuit has an n-channel type first transistor capable of interrupting power supply to a logic gate in accordance with an input control signal, and a p-channel type second transistor capable of fixing an output node of the logic gate to a high level interlockingly with the power supply interrupting operation by the first transistor, and a threshold of the first transistor is set to be higher than that of a transistor as a component of the logic gate. Means for interrupting the power supply to the logic gate is realized by the first transistor, and means for fixing an output node of the logic gate to the high level is realized by the second transistor, thereby simplifying the circuit for fixing the output logic of the logic gate while suppressing a subthreshold current.

Abstract: There is provided a semiconductor integrated circuit, a logic operation circuit and a flip flop capable of operating at a high speed and having a leak electric current reduced. In a semiconductor integrated circuit according to the present invention, only a gate circuit on a critical path is constituted by an MT gate cell obtained by combining transistors having a low threshold voltage with transistors having a high threshold voltage, and any other gate circuit is constituted by a transistor having a high threshold voltage. Consequently, the gate circuit on the critical path can be operated at a high speed, and the overall leak electric current can be suppressed, thereby reducing the consumption power.

Abstract: Clocked full-rail differential logic circuits with sense amplifier and single-rail logic are activated by a delayed clock and include a sense amplifier circuit that is triggered by a second delayed clock. In Addition, according to the invention, the complementary logic function of the prior art is replaced by a single transistor appropriately sized to provide the complementary output. Consequently, the clocked full-rail differential logic circuits with sense amplifier and single-rail logic of the invention are smaller, less complex and are capable of operating efficiently under heavy load conditions without the increased size and the significant reduction in speed associated with prior art full-rail differential logic circuits.

Abstract: A latching dynamic logic structure is disclosed including a static logic interface, a dynamic logic gate, and a static latch. The static logic interface receives a data signal, a select signal, and a clock signal, and produces a first intermediate signal such that when the select signal is active, the first intermediate signal is dependent upon the data signal for a period of time following a clock signal transition. The dynamic logic gate discharges a dynamic node following the clock signal transition dependent upon the first intermediate signal. The static latch produces an output signal assuming one of two logic levels following the clock signal transition, and assuming the other logic level in the event the dynamic node is discharged. A scan-testing-enabled version of the latching dynamic logic structure is described, as is an integrated circuit including the latching dynamic logic structure.

Abstract: An inverter circuit includes an input end receiving an input signal having a low level and a high level, wherein the low level is greater than zero, a P-channel metal-oxide-semiconductor (PMOS) transistor having a gate electrode coupled to the input end and a source electrode coupled to a voltage source, a first N-channel metal-oxide-semiconductor (NMOS) transistor having a drain electrode coupled to a drain electrode of the PMOS transistor to serve as an output end, and a source electrode thereof coupled to ground, and a voltage drop device coupled to the gate electrode of the first NMOS transistor and the input end to provide a voltage drop from the input end to the gate electrode of the first NMOS transistor, thereby eliminating a current leakage of the first NMOS transistor at the low level of the input signal.

Abstract: Clocked half-rail differential logic circuits with single-rail logic of the invention do not include complementary logic elements. According to the invention, the complementary logic function of the prior art is replaced by a single transistor appropriately sized to provide the complementary output OUTBAR. Consequently, clocked half-rail differential logic circuits with single-rail logic of the invention use less power and, therefore, generate less heat, require less space, and are simpler in design so that they are more flexible, more space efficient and more reliable than prior art half-rail differential logic circuits.

Abstract: A pseudo-NMOS circuit includes a load PFET electrically connected between a power supply and an output node, and an NFET circuit having a plurality of inputs connected between the output node and ground. A feedback PFET is electrically connected between the power supply and the output node, in parallel with the load PFET, and is controlled by a signal at the output node of the pseudo-NMOS circuit.

Abstract: A first clock stage in a circuit utilizes a second stage clock for triggering the falling edge of a first clock stage output. The output will not reset until both the first clock is low and the second clock are high due to the addition of the second clock signal. This is accomplished by adding a transistor and inverter to the first stage. The drain of a P-type FET is connected to source of the P-FET being controlled by the first clock through its gate. The additional P-FET is controlled by an inverted second clock signal. The clock signal is inverted by an inverter connected to the gate of the additional P-FET. Stability is provided to the first stage by creating a full keeper, which holds the output from the logic device in the first stage. A pair of transistors are connected by their drains to the output of the logic device. The transistors are controlled by an inverter, which is connected to the pairs' bases, wherein the inverter receives the output from the logic device.

Abstract: A driver including boost circuitry for reducing tri-state delay. Boost circuitry includes boost legs (32) and (34) having boost delay chains (38) and (40), respectively. Subcircuits (35) and (39) may include a series of inverters or other devices to delay a tri-state enable signal (EN2) or (EN2BAR) for a predetermined amount of time substantially equivalent to the time it takes for a first signal (A2) to travel from input pin A to PAD. Transient current provides a boost by discharging or charging output nodes (G1) and (G2), respectively. Boost legs (32) and (34) remain on for the length of time it takes for enable signal (EN2) or (EN2BAR) to travel through subcircuits (35) and (39). The boost increases the rate of transition of output nodes (G1) and (G2) thereby reducing the delay of tri-state signal (EN2).

Abstract: A semiconductor integrated circuit that is well-balanced between increased operating speed and de creased power consumption caused by a leakage current. The gate cells of the circuit comprised of low threshold voltage MOSs are used for logic gates provided with three or more inputs, and gate cells comprised of high threshold voltage MOSs are generally used for logic gates provided with one or two inputs, sometimes on a case-by-case basis.

Abstract: A MOSFET logic circuit for performing a logic AND operation is presented including three transistors, wherein at least two input signals are provided to the circuit and an output signal indicative of an AND operation performed on a first and second input signal of the at least two input signals is output from the circuit. In another embodiment, a MOSFET true and complement signal generating signal is presented including at least one MOSFET inverter logic circuit, and first and second MOSFET AND logic circuits, wherein each of the first and second AND logic circuits includes three transistors. The true and complement signal generating circuit receives first and second input signals and outputs a true signal and a complement signal indicative of the first input signal.

Abstract: A semiconductor integrated circuit device is composed of logic gates each provided with at least two MOS transistors. The logic gates are connected to a first potential point and a second potential point. The semiconductor integrated circuit device includes a current control device connected between the logic gate and the first potential point and/or between the logic gate and the second potential point for controlling a value of a current flowing in the logic gate depending on an operating state of the logic gate. The circuit can be used in devices that cycle in operation between high and low power consumption modes, such as microprocessors that have both an operation mode and a low power back-up or sleep mode used for power reduction.

Abstract: Clocked full-rail differential logic circuits with sense amplifier and shut-off are activated by a delayed clock and include a sense amplifier circuit that is triggered by a second delayed clock and a shut-off device. The addition of the sense amplifier circuit, and second delayed clock signal allows the sense amplifier circuit to act as the driver and therefore there is no need for increasing the size of the differential logic network to provide a driver function. The addition of the shut-off device provides a full-rail differential logic circuit with shut-off that does not experience the large “dip” experienced by prior art full-rail differential logic circuits and is therefore more power efficient.

Abstract: In a circuit simulation step, a cell transistor level net list is input, the slew of an input signal waveform and the magnitude of a load capacitance connected to a cell output terminal are varied for each cell, to perform a circuit simulation of each cell for obtaining an output signal waveform. Next, in a dependence table generation step, the dependence of the output signal waveform slew upon the input slew rate and the load capacitance is calculated for each cell, the dependence thus calculated is compared with a predetermined threshold level, and according to the dependence level, a delay calculation expression with consideration taken to the delay of signal propagation between the cell input and output terminals and another without such consideration are selectively used. Accordingly, the delay times of the cells forming a semiconductor integrated circuit can be calculated at high accuracy and at high processing speed.

Abstract: A flip-flop circuit that includes a set of three p-channel connectors connected in parallel between a supply voltage (Vdd) and a first control node. The circuit further includes three n-channel transistors connected in series between the first control node and Vss. The first control node controls the gate of a p-channel transistor connected between Vdd and an output node. A set of n-channel transistors is connected between the output node and ground. The gates of these transistors are controlled by the clock signal, a delayed clock signal, and an inverted copy of the data signal, which is provided, via a control inverter, to a second control node. The first control node drives the output node to a first state and the second control node drives the output node to a second state. The first and second control nodes are preferably decoupled.

Abstract: An improved high-speed domino logic circuit uses two delayed clock signals, CLKD and CLKDBAR, and three transistors to introduce a transition delay time. According to the invention, the delayed clock signals are used in conjunction with the three added transistors to avoid the contest or “fight” between a first node and the keeper transistor in the event of a path to ground being created through the logic block portion of improved high-speed domino logic circuit. The improved high-speed domino logic circuits of the invention, in contrast to prior art domino logic circuits, can be designed to have high noise immunity and increased speed. In addition, since according to the invention, only three new transistors are required, the modification of the invention is space efficient and readily incorporated into existing designs.

Abstract: A technique to individually adjust noise immunity of each input of a dynamic circuit including parallel or series-parallel pull-down network includes identifying precharge nodes of the dynamic circuit that require a reduction of noise. The technique further includes identifying NMOS transistor drains connected to respective precharge nodes, and creating a pull-up network of PMOS transistors for the identified precharge nodes. After creating a pull-up network of PMOS transistors, the technique includes arranging the order of the PMOS transistors corresponding to the respective precharge nodes to improve noise immunity and performance of the dynamic circuit. After arranging the order of the PMOS transistors, the technique can further include sizing the PMOS transistors to achieve the required reduction of noise for the precharge nodes.