Abstract: A fast current generating element in a current generating unit, used by the present invention, provides a large current for accelerating the switching of transistor switches when the transistor switches are switched. The fast current generating element includes a capacitor to provide a large differential current when a voltage level transiently changes during the switching of the transistor switches. Therefore, a transient response time of a signal transformer is shortened.

Abstract: A high-voltage selecting circuit generates an output voltage with no voltage drop by means of an auxiliary NMOS transistor turning on the corresponding selecting PMOS transistor of the high-voltage selecting circuit when the voltage levels of a first input voltage and a second input voltage are equal. In addition, when one of the first input voltage and the second input voltage is higher than the other one, the high-voltage selecting circuit avoids the leakage current by means of an auxiliary PMOS transistor turning off the corresponding selecting PMOS transistor of the high-voltage selecting circuit. In this way, the high-voltage selecting circuit can correctly generate the output voltage according to the first input voltage and the second input voltage, and avoid the leakage current at the same time.

Abstract: A voltage level shifter and a semiconductor device having the same are presented. The voltage level shifter includes a swing width transformer and a power supply controller. The swing width transformer receives an input signal that ranges between a first level power voltage and a ground voltage and is configured to generate a signal that ranges between a second level power voltage and that of the ground voltage. The power supply controller is configured to control power supply to the swing width transformer in response to an enable signal activated in an active mode.

Abstract: An integrated circuit structure includes a latch having a first output node and a second output node complementary to each other. A first pre-charge transistor has a source-drain path coupled between a positive power supply node and the first output node. A second pre-charge transistor has a source-drain path coupled between the positive power supply node and the second output node. The integrated circuit structure further includes a delay-inverter coupled between a signal input node and inputs of a first NMOS transistor and a second NMOS transistor in the latch. The delay-inverter is configured to allow one of the first pre-charge transistor and the second pre-charge transistor to pre-charge a respective one of the first output node and the second output node before an input signal at the signal input node arrives at a gate of a respective one of the first NMOS transistor and the second NMOS transistor.

Abstract: Hardened programmable logic devices are provided with programmable circuitry. The programmable circuitry may be hardwired to implement a custom logic circuit. Generic fabrication masks may be used to form the programmable circuitry and may be used in manufacturing a product family of hardened programmable logic devices, each of which may implement a different custom logic circuit. Custom fabrication masks may be used to hardwire the programmable circuitry to implement a specific custom logic circuit. The programmable circuitry may be hardwired in such a way that signal timing characteristics of a hardened programmable logic device that implements a custom logic circuit may match the signal timing characteristics of a programmable logic device that implements the same custom logic circuit using configuration data.

Abstract: A level shifter circuit suitable for high voltage applications with shoot-through current isolation is presented. The level shifter receives a first enable signal and receives an input voltage at a first node and supplies an output voltage at a second node. The circuit provides the output voltage from the input voltage in response to the first enable signal being asserted and sets the output node to a low voltage value when the first enable signal is de-asserted. The level shifting circuit includes a depletion type NMOS transistor, having a gate connected to the output node, and a PMOS transistor, having a gate connected to the first enable signal. It also includes a first resistive element that is distinct from the NMOS and PMOS transistors. The NMOS transistor, the PMOS transistor and the first resistive elements are connected in series between the first and second nodes, with the NMOS transistor being connected to the first node.

Abstract: A level converter circuit is provided for converting an input signal of a digital signal having a first signal level into an output signal having a second signal level higher than the first signal level. An amplifier circuit amplifies the input signal and outputs an amplified output signal, and a current generator circuit generates a control current corresponding to an operating current flowing through the amplifier circuit upon change of the signal level of the input signal. A current detector circuit detects the generated control current, and controls the operating current of the amplifier circuit to correspond to the detected control current. The current generator circuit includes series-connected first and second nMOS transistors as inserted between the current detector circuit and the ground. The first nMOS transistor operates responsive to the input signal, and the second nMOS transistor operates responsive to an inverted signal of the input signal.

Abstract: An RESURF region is formed so as to surround a high-potential logic region with an isolation region interposed therebetween, in which a sense resistance and a first logic circuit which are applied with a high potential are formed in high-potential logic region. On the outside of RESURF region, a second logic circuit region is formed, which is applied with the driving voltage level required for driving a second logic circuit with respect to the ground potential. In RESURF region, a drain electrode of a field-effect transistor is formed along the inner periphery, and a source electrode is formed along the outer periphery. Furthermore, a polysilicon resistance connected to sense resistance is formed in the shape of a spiral from the inner peripheral side toward the outer peripheral side.

Abstract: A cascoded level shifter for receiving an input signal in a low voltage range and for generating an output signal in a high voltage range is disclosed.

Abstract: A method and apparatus are disclosed to control one or more input output (I/O) pads. An input signal is translated to an output signal having a desired logic level using a first latch loop. The state of the first latch loop is maintained by a second latch loop, integrated with the first latch loop, when a latching indication is received. The integration between the first latch loop and the second latch loop is such that the second latch loop creates an input-output connection if transmission gates in the second latch loop are conductive, and disables the input-output connection if the transmission gates are not conductive.

Abstract: A level shift circuit includes a first resistor with one end connected to GND, a first transistor with a drain and a gate connected to the other end of the first resistor, and a source connected to a first power supply, a second transistor with a source connected to the first power supply, and a gate connected to the drain and the gate of the first transistor, a second resistor with one end connected to a drain of the second transistor, a third transistor with a source connected to the other end of the second resistor, and a gate connected to an input terminal, a first current source connected between a second power supply and a drain of the third transistor; and a fourth transistor connected between an output terminal and the first power supply with a gate connected to the drain of the second transistor.

Abstract: Implementations to mitigating side effects of impedance transformation circuits are described. In particular, mitigation circuitry may be coupled to a high impedance circuit to minimize or eliminate non-linear output of the high impedance circuit in order to provide a well-defined bias voltage to the input of a buffer or amplifier device coupled to a capacitive sensor. Additionally, the mitigation circuitry may be coupled to the high impedance circuit to reduce or eliminate rectifying effects of the high impedance circuit. Accordingly, a bias voltage can be utilized to provide a stable operating point of the buffer or amplifier device via a high impedance circuit utilizing one or more impedance transformations.

Abstract: In a level conversion circuit, two P channel MOS transistors form a current mirror circuit. When an input signal rises from the “L” level to the “H” level, an N channel MOS transistor connected to a drain of one P channel MOS transistor is brought out of conduction to prevent a leak current from flowing through two P channel MOS transistors, which decreases a power consumption. In addition, when the input signal rises from the “L” level to the “H” level, a P channel MOS transistor connected to a drain of the other P channel MOS transistor is brought into conduction to fix a potential of a node of the drain of the other P channel MOS transistor to the “H” level, which prevents the potential of the node from becoming unstable.

Abstract: In a semiconductor device having a terminal connected to an internal portion, a termination circuit for providing on-die termination for the terminal of the device. The termination circuit comprises a plurality of transistors, including at least one NMOS transistor and at least one PMOS transistor, connected between the terminal and a power supply; and control circuitry for driving a gate of each of NMOS transistor with a corresponding NMOS gate voltage and for driving a gate of each PMOS transistor with a corresponding PMOS gate voltage, the control circuitry being configured to control the NMOS and PMOS gate voltages so as to place the transistors in an ohmic region of operation when on-die termination is enabled. The power supply supplies a voltage that is less than each said NMOS gate voltage and greater than each said PMOS gate voltage.

Abstract: An integrated circuit includes multiple power domains. Supply current switch circuits (SCSCs) are distributed across each power domain. When a signal is present on a control node within a SCSC, the SCSC couples a local supply bus of the power domain to a global supply bus. An enable signal path extends through the SCSCs so that an enable signal can be propagated down a chain of SCSCs from control node to control node, thereby turning the SCSCs on one by one. When the domain is to be powered up, a control circuit asserts an enable signal that propagates down a first chain of SCSCs. After a programmable amount of time, the control circuit asserts a second enable signal that propagates down a second chain. By spreading the turning on of SCSCs over time, large currents that would otherwise be associated with coupling the local and global buses together are avoided.

Abstract: An output stage includes a system input and a system output, a first transistor having a first control input and a first controlled path, and a second transistor having a second control input and a second controlled path. The second controlled path is in series with the first controlled path and the system output. A first current-controlled voltage source has an input that is electrically connected to the system input. The first current-controlled voltage source has an output that is electrically connected to the first control input of the first transistor. A second current-controlled voltage source has an input that is electrically connected to the system input. The second current-controlled voltage source has an output that is electrically connected to the second control input of the second transistor.

Abstract: A level shifting circuit having an input and an output where the level shifting circuit is configured to receive a logical high level having a first voltage level at the input and to output a logical high level having a second voltage level at the output where the second voltage level is higher than the first voltage level. Level shifting circuit embodiments having two or more parallel coupled depletion mode transistors coupled to a high voltage source and further coupled to the output by an enhancement mode transistor, and an additional transistor coupled between a first signal and the output of the level shifting circuit where the first signal has the same logic level of the input are disclosed.

Abstract: A boot strap driver including a fast differential level shifter are disclosed. The fast differential level shifter may include a first differential amplifier differentially amplifying a pulse width modulation signal and an inverted pulse width modulation signal and outputting a first differential amplification voltage and a second differential amplification voltage based on the amplified result. The fast differential level shifter may also include a second differential amplifier differentially amplifying the first differential amplification voltage and the second differential amplification voltage, and shifting the differential amplification voltages to voltages having an output range between a first voltage and a second voltage based on the amplified result.

Abstract: The present invention provides a display device which can achieve the high breakdown voltage proof property, the enhancement of reliability or the expansion of the designing/process tolerance of transistors by the improvement of a circuit. A display device includes a plurality of pixels and a drive circuit which drives the plurality of pixels.

Abstract: A system having an input and output buffer includes a dynamic driver reference generator to generate dynamic driver reference signals based on a data signal and an IO buffer supply voltage, a level shifter to generate level shifted signals based, in part, on the dynamic driver reference signals, and a driver having at least one stress transistor. The driver dynamically adjusts a voltage across the stress transistor based on at least one of dynamic driver reference signals, the level shifted signals, and a current state of an IO pad.

Abstract: A logic circuit includes a logic gate unit, an inverter, and a switching circuit. The logic gate unit receives a power supply voltage and an input signal to output a first signal. The inverter receives the first signal to output a second signal. The switching circuit provides one of first and second power supply voltages as the power supply voltage of the logic gate unit in response to the first and second signals. The first power supply voltage and the second power supply voltage have different voltage levels, thus enabling stable level shifting.

Abstract: A level shifter receives an input signal of either a first lower voltage or a first upper voltage which form a voltage pair, and level-shifts the input signal to output an output signal of either a second lower voltage or a second upper voltage. An SR flip-flop generates an output signal which is switched to the second upper voltage upon receiving a positive edge via its set terminal, and is switched to the second lower voltage upon receiving a positive edge via its reset terminal. An AND gate generates the logical AND of a feedback signal having the inverted logical level of the output signal of the SR flip-flop and the input signal, which is output to the set terminal of the SR flip-flop. A NOR gate generates the logical NOR of the feedback signal and the input signal, which is output to the reset terminal of the SR flip-flop.

Abstract: A level shifter circuit includes an input circuit, an inverter, a pull-up circuit, and a pull-down circuit. The input circuit generates a pull-up signal in response to an input signal using charge from a supply voltage. The inverter inverts the input signal to generate a pull-down signal. The inverter comprises complementary transistors that receive charge from the supply voltage. The pull-up circuit pulls a level shifted output signal of the level shifter circuit to the supply voltage in response to the pull-up signal. The pull-down circuit pulls the level shifted output signal to a low voltage in response to the pull-down signal.

Abstract: An interface of the present invention includes a first inverter circuit that inverts a logic level of an input signal given to an external input terminal and outputs the inverted logic level, a second inverter circuit that outputs a potential in which a logic level of an output signal of the first inverter circuit is inverted, that is, a potential higher or lower than a logic of an input signal applied to the first inverter circuit by the amount of a predetermined potential, and a feedback path that positive feedbacks an output signal of the second inverter circuit to the external input terminal. The interface circuit of the invention positive-feedbacks a potential of the output signal of the second inverter circuit and shifts the potential of the external input terminal in a floating state to an H or L level potential.

Abstract: Apparatus and methods efficiently provide compatibility between CMOS integrated circuits and voltage levels that are different from that typically used by modern integrated circuits. For example, backwards compatibility can be desirable. Older signaling interfaces operate at different voltage levels than modern CMOS integrated circuits and conventional circuits to interface with these other signaling interfaces exhibit relatively high power consumption. In the context of a transmitter with a P-type substrate, an output driver is embodied in a deep N-well with retrograde P-wells and is biased with voltage biases that can float with respect to the VDD and VSS supplies provided to the CMOS integrated circuit. In the context of a receiver with a P-type substrate, a portion of a receiver is embodied in a deep N-well and biased with floating voltage biases such that the receiver is compatible with signaling received from a signaling technology with disparate voltage levels.

Abstract: A thin-film logic circuit, which can be fabricated entirely of TFTs of the same conductivity type, includes a logic stage connected to a supply voltage and a level shifter connected to a wider voltage range provided by the supply voltage and ground. The logic circuit produces output signals with full rail-to-rail signal range from ground to the supply voltage and can implement or include a basic logic component such as an inverter, a NAND gate, or a NOR gate or more complicated circuits in which many basic logic components are cascaded together. Such logic circuits can be fabricated directly on flexible structures or large areas such as in flat panel displays.

Abstract: An apparatus is provided that uses a first level shifter for performing a voltage shift of a low level input signal of a first voltage domain to a high level output signal of a second voltage domain. The first level shifter comprises a storing element in the second voltage domain, an input stage coupled to the storing element for providing a signal state to be stored in the storing element and a feedback loop from an output of the storing element to the input stage for controlling the input stage in response to a transition of a high level output signal of the storing element.

Abstract: Integrated circuits such as programmable logic devices are provided with hotsocket detection circuitry. The hotsocket detection circuitry monitors signals on data pins and power supply voltages. If the data pins become active before the power supply voltages have reached appropriate levels, a hotsocket condition is identified. When a hotsocket condition is identified, driver circuitry on the integrated circuit can be disabled by a hotsocket signal. The integrated circuit may include multiple blocks of input-output circuitry, each of which includes a local hotsocket circuit that uses global hotsocket and power-on-reset signals in disabling input-output circuitry in that input-output block. A power supply circuit in each input-output block may ensure that the local hotsocket circuit in that input-output block is powered.

Abstract: Provided is a complementary metal oxide semiconductor (CMOS) input buffer circuit that is capable of lower voltage operation with lower current consumption. The CMOS input buffer circuit includes: a depletion type NMOS transistor including a drain connected to a power supply terminal (VDD), and a gate connected to an output terminal; a PMOS transistor including a source connected to a source of the depletion type NMOS transistor, a drain connected to the output terminal, and a gate connected to an input terminal; and an NMOS transistor including a source connected to a reference terminal (GND), a gate connected to the input terminal, and a drain connected to the output terminal.

Abstract: Circuit blocks and respectively convert high-voltage logic signals in which two logical values are expressed by a first signal potential and a second signal potential into low-voltage logic signals in which the two logical values are expressed by a third signal potential at least as large as the first signal potential and a fourth signal potential that is the third signal potential to which a positive voltage has been added and which is no greater than the second signal potential, and outputs the converted logic signals. The transistors in the circuit block are of the form of replacing the respective transistors of the circuit block with elements of opposite polarity, so that when the third signal potential is changed and operation of one of the circuit blocks and becomes difficult, the other operates normally. Consequently, stable level conversion can be accomplished.

Abstract: Power supply regulation. A power supply regulation system includes a transistor through which power is carried. The system also includes a switch connected to a gate of the transistor. Further, the system includes a transmission gate responsive to an input signal to apply a first signal level causing the transistor to enter an ON state in which the transistor carries full power, to apply a second signal level causing the transistor to enter an OFF state in which the transistor carries no power and to apply a third signal level causing the transistor to enter an INTERMEDIATE state in which the amount of power the transistor carries is controlled by the switch.

Abstract: In one embodiment, a semiconductor circuit for coupling a first node to a second node includes a first transistor having a first terminal coupled to the first node, a second terminal coupled to the second node, and a control terminal coupled to a control node. The circuit also includes a level shifting circuit having a series diode for coupling a bulk terminal of the first transistor to the control node, and a supply coupling circuit coupled between a first power supply node and the control node.

Abstract: An input/output circuit includes an I/O node connected to a pull up and pull down circuit having a pull up and pull down transistors. Data is sent and received at through the I/O node. A level shifter provides voltages including a supply voltage and a high voltage higher than the supply voltage. A signal control circuit controls the voltage level applied to the pull up and pull down circuit. During a data input mode, data is received at the I/O node and the pull up transistor is biased at the high voltage to cut off the pull up transistor. During a data output mode, data is output at the I/O node and the pull down transistor pulls down the I/O node to ground when the output data is low, and the pull up transistor is activated when the output data is high.

Abstract: A level-shifting circuit with reduced shoot-through current includes an output circuit comprising high-voltage devices with a pull-up circuit configured for pulling up a voltage on an output signal to a high voltage responsive to a high-side control signal. The output circuit may also include a pull-down circuit configured for pulling down the voltage on the output signal to a low voltage in responsive to a low-side control signal. The level-shifting circuit can also include a high-side inverting buffer operably coupled between an edge-controlled signal and the high-side control signal, and a low-side buffer configured for driving the low-side control signal responsive to an input signal. The level-shifting circuit may also include an edge-control buffer operably coupled between the input signal and the high-side inverting buffer and configured to generate the edge-controlled signal with a slow rise time relative to a fall time.

Abstract: According to one embodiment, a level conversion circuit includes an intermediate voltage generating portion to generate an intermediate voltage between a first voltage and a second voltage upon receiving the first voltage and the second voltage higher than the first voltage. A buffer portion operates on the intermediate voltage upon receiving a first signal and an inverted first signal of a first amplitude corresponding to the first voltage. The buffer portion outputs a second signal and an inverted second signal having a second amplitude corresponding to the intermediate voltage. A level shift portion operates on the second voltage upon receiving the second signal and the inverted second signal, and outputs a third signal and an inverted third signal having a third amplitude corresponding to the second voltage.

Abstract: An edge rate suppression circuit arrangement is provided for operation with an open drain bus. The circuit arrangement includes a variable resistive circuit having an input for receiving a variable voltage signal and an output coupled to the open drain bus, and a control circuit configured to operate the variable resistive circuit. The control circuit operates the variable resistive circuit in respective high and low resistance states in response to the variable voltage signal.

Abstract: An embodiment of a low-to-high-level voltage translator is proposed. This translator translates the low voltage swing signals for the core into high voltage swing signals of the I/O blocks. This translator may be particularly useful for high-speed application where the difference between the core and the I/O supply voltage is very large, e.g., the core is working at 0.8V and the I/O is working at 3.6V or higher without little or no static power dissipation. The proposed translator may give improved transition times and propagation delays as compared to conventional translators. The proposed translator may also use less hardware in comparison to other such translators.

Abstract: A level shifter configured to generate an output voltage having a shifted voltage level relative to an input voltage, the level shifter includes a first gain module having a first resistance, the first gain module to generate a first voltage based on the input voltage and the first resistance. A load module having a second resistance, the load module to generate a second voltage based on the first voltage and the second resistance. A second gain module having a third resistance, the second gain module to generate a third voltage based on one of the second voltage and the third resistance or the first voltage and the third resistance; and an output driver to output the output voltage having the shifted voltage level based on the third voltage.

Abstract: One embodiment of the invention includes a level-shifter circuit. The circuit comprises a control stage that steers a current from one of a first control node and a second control node to the other of the first control node and the second control node based on an input signal to set a first initial voltage at the first control node and a second initial voltage at the second control node, the input signal having logic-high and logic-low voltage magnitudes that occupy a low voltage domain. The circuit also includes a logic driver that is coupled to the second control node and is referenced in a high voltage domain. The logic driver can be configured to provide an output signal having logic-high and logic-low voltage magnitudes that occupy the high voltage domain based on the second initial voltage.

Abstract: A level shifter circuit includes first and second transistors coupled in series and third and fourth transistors coupled in series. The fourth transistor is coupled to a first node between the first and the second transistors. The level shifter circuit also includes fifth and sixth transistors coupled in series and seventh and eighth transistors coupled in series. The eighth transistor is coupled to a second node between the fifth and the sixth transistors. The second and the eighth transistors receive a first input signal at control inputs. The fourth and the sixth transistors receive a second input signal at control inputs. The second input signal is inverted relative to the first input signal.

Abstract: A design method places power gates or switch cells using unoccupied locations of logic cell rows. Two types of such switch cells, filler switches and sealer switches, may be provided using the unoccupied locations. In one embodiment, virtual ground voltage references to the logic cells are routed to their associated switch cells. Because conventional standard cell design and placement techniques achieve only a placement density or utilization between 70-80% (i.e., unoccupied space constitutes between 20 to 30% of the available space in each row of logic cells), by placing the power gate cells in the unoccupied space, the method does not increase the silicon real estate requirement even though the power gate cells are introduced into the design. Optimization techniques may be applied to achieve proper sizing and distribution of power gate cells, so as to avoid a performance penalty due to the power gate cells.

Abstract: Capacitive node isolation circuitry in an integrated circuit eliminates the creation of hot spots (stored charge) on high capacitive nodes during a test of electrostatic discharge (ESD) protection circuitry of the integrated circuit or during any ESD event occurring while the integrated circuit is in a standby mode. The isolation circuitry includes a standby mode logic circuit responsive to a standby mode signal received at one of its inputs and provides an output signal to a gate of an active switching device located in a path between an external pin of the integrated circuit and the internal high capacitive node. The output signal keeps the active switching device turned off for the duration of the ESD test or ESD event. The standby mode logic circuit transparently passes an input logic signal to the active switching device whenever the integrated circuit is in a normal operating mode.

Abstract: A level shift circuit and a semiconductor device are configured to prevent failure and malfunction even when an excessive negative voltage or ESD surge are applied to a high-voltage power supply terminal. The level shift circuit includes a level shift resistor, a current-limiting resistor connected in series to the level shift resistor, and an n-channel MOSFET, with its drain connected to the current-limiting resistor. An output of the level-up circuit is obtained from the positioned between the level shift resistor and the current-limiting resistor. By providing the current-limiting resistor, the current that flows due to an excessive negative voltage or ESD surge is suppressed to prevent the level shift circuit from failing or malfunctioning.

Abstract: An integrated circuit output driver is provided that exhibits improved performance and signal integrity. In one embodiment, circuitry for producing an oscillatory output signal having a peak voltage of V volts uses MOS transistor circuitry transistors of which are designed for a maximum port-to-port voltage of substantially less than V volts. A first inverter chain is coupled to an input signal to produce a predriver output signal. A second inverter chain of multiple of inverters including a first inverter produces a driver output signal. Circuitry is provided for AC-coupling the predriver output signal to the second inverter chain, it being configured to translate the predriver output signal to a higher voltage range to produce a translated predriver output signal.

Abstract: An apparatus and method for testing level shifter threshold voltages on an integrated circuit includes one or more level shifter modules each including a number of level shifter circuits. Each level shifter circuit may be coupled to a first and a second voltage supply. Each level shifter circuit may also receive an input signal that is referenced to the first voltage supply, and to generate an output signal that is referenced to the second voltage supply. In addition, each level shifter module may include detection logic that may detect an output value of each of the level shifter circuits. The control circuit may be configured to iteratively change the voltage output from one of the voltage supplies, and maintaining a voltage on the other voltage supply while the input signal is provided to the level shifter circuits. The detection logic may capture the output value upon each change in voltage.

Abstract: A receiver particularly suited for an M-BUS is described. During transmission, the receiver is disabled. After each transmission, nodes and states in the receiver are set to prepare the receiver to receive a signal. Once data is sensed, a feedback loop clips the input signal to the receiver to limit the swing of the input signal. The line of the power supply at the lower potential is modulated, rather than modulating the line at the higher potential, for the transmission of data.

Abstract: Method and apparatus are provided for buffering a data signal to a low voltage logic device. A circuit for buffering the data signal to the low voltage logic device includes an output buffer and an N-type transistor. The output buffer has an input and an output, where the input is configured to receive the data signal. The output buffer is configured to produce an output signal based on the data signal, and the output signal has a maximum potential. The N-type transistor has a source coupled to the output, a drain configured to couple to the low voltage logic device, and a gate configured to receive a bias potential, where the bias potential is greater than the maximum potential.

Abstract: The invention relates to a CMOS input circuit for receiving low-swing input signals, which is an alternative to the CMOS input circuits as known from the prior art.

Abstract: A mixed-voltage buffer circuit coupled between a first circuit operative at a first power supply voltage and a second circuit operative at a second power supply voltage. The buffer circuit is connectable to the second power supply voltage and a third power supply voltage and includes an input circuit coupled to the first circuit through a first node and to the second circuit through a second node. The input circuit includes a first part coupled to the first node and an inverter coupled to the second node. The first part provides a signal having a voltage level approximately equal to the third power supply voltage to the inverter in response to a first signal on the first node, and provides a signal having a voltage level approximately equal to the second power supply voltage to the inverter in response to a second signal on the first node.

Abstract: A circuit receives an input signal characterized by a first pair of rail voltages and generates in response thereto an output signal characterized by a second pair of rail voltages. The circuit comprises first and second transistors coupled in series between a high reference voltage and a low reference voltage. The input signal drives a control lead of the second transistor. The logical inverse of the input signal drives a control lead of a third transistor, which couples a charge source to the control lead of the first transistor in response thereto in order to turn off the first transistor. The charge source can be either a voltage source or a charged capacitive node. Of importance, the third transistor does not have to overcome contention with other transistors to turn off said first transistor.