Abstract: To provide a circuit with low power consumption, a semiconductor device with low power consumption, a highly reliable semiconductor device, a tire whose performance is controlled, a moving object whose performance is controlled, or a moving object with a high degree of safety. A tire provided with a semiconductor device is provided. The semiconductor device includes a circuit portion, an antenna, and a sensor element. The circuit portion includes a transistor. The transistor includes an oxide semiconductor. The sensor element is configured to measure the air pressure of the tire.

Abstract: A lighting device and system having at least one circuit, the circuit having at least two LEDs connected in series, parallel or anti-parallel configuration and at least one current limiting diode. The device or system may be driven with AC or DC power and may further include a sensor and polarity switching circuit to utilize all LEDs within the circuit when drive by DC power.

Abstract: To provide a circuit with low power consumption, a semiconductor device with low power consumption, a highly reliable semiconductor device, a tire whose performance is controlled, a moving object whose performance is controlled, or a moving object with a high degree of safety. A tire provided with a semiconductor device is provided. The semiconductor device includes a circuit portion, an antenna, and a sensor element. The circuit portion includes a transistor. The transistor includes an oxide semiconductor. The sensor element is configured to measure the air pressure of the tire.

Abstract: An object is to reduce power consumption of an analog-digital converter circuit. An analog potential obtained in a sensor or the like is held in a sample-and-hold circuit including a transistor with an extremely low off-state current. In the sample-and-hold circuit, the analog potential is held in a node which is able to hold a charge by turning off the transistor. Then, power supply to a buffer circuit or the like included in the sample-and-hold circuit is stopped to reduce power consumption. In a structure where a potential is held in each node, power consumption can be further reduced when a transistor with an extremely low off-state current is connected to a node holding a potential of a comparator, a successive approximation register, a digital-analog converter circuit, or the like, and power supply to these circuits is stopped.

Abstract: A control for an electrical consumer includes a first switching device for connecting an output for the consumer to a first potential, a second switching device for connecting the output to a second potential, a control device for activating the switching devices, a first scanning device for providing a first signal as a function of a switching state of the first switching device, a second scanning device for providing a second signal as a function of a switching state of the second switching device, and a comparator device for determining a difference in the switch-on times of the switching devices on the basis of the determined signals.

Abstract: A lighting device and system having at least one circuit, the circuit having at least two LEDs connected in series, parallel or anti-parallel configuration and at least one current limiting diode. The device or system may be driven with AC or DC power and may further include a sensor and polarity switching circuit to utilize all LEDs within the circuit when drive by DC power.

Abstract: In a half bridge circuit according to one aspect of the present disclosure, when a voltage between a first terminal and a third terminal or a voltage between the first terminal and the second terminal is greater than or equal to a threshold voltage, a current is passed from the second terminal to the third terminal or from the third terminal to the second terminal according to a polarity of the voltage between the second terminal and the third terminal. When the current is passed from the third terminal to the second terminal, the voltage between the second terminal and the third terminal changes with respect to the voltage applied between the first terminal and the third terminal within a range where the voltage between the first terminal and the third terminal is less than or equal to the threshold voltage.

Abstract: A Tx IC and an Rx IC that use different supply voltages are mounted on a circuit board and interfaced via traces of the board. The configuration of the Tx IC is such that DC decoupling is provided between the ICs while also preventing inadvertent turn-on of the ESD diodes of the Rx IC. These features make it possible to provide DC decoupling between high-performance Tx ICs that use relatively high supply voltages and Rx ICs that use relatively low supply voltages without the need for AC coupling capacitors and while also preventing ESD protection of the Rx IC from being degraded.

Abstract: An electronic component comprising a half bridge adapted for operation with an electrical load having an operating frequency is described. The half bridge comprises a first switch and a second switch each having a switching frequency, the first switch and the second switch each including a first terminal, a second terminal, and a control terminal, wherein the first terminal of the first switch and the second terminal of the second switch are both electrically connected to a node. The electronic component further includes a filter having a 3 dB roll-off frequency, the 3 dB roll-off frequency being less than the switching frequency of the switches but greater than the operating frequency of the electrical load. The first terminal of the filter is electrically coupled to the node, and the 3 dB roll-off frequency of the filter is greater than 5 kHz.

Abstract: According to an exemplary implementation, an integrated circuit (IC) includes a logic circuit monolithically formed on the IC. The logic circuit is configured to generate modulation signals for controlling power switches of a power inverter. The logic circuit generates the modulation signals based on at least one input value. The IC further includes a voltage level shifter monolithically formed on the IC. The voltage level shifter is configured to shift the modulation signals to a voltage level suitable for driving the power switches of the power inverter. The logic circuit can be a digital logic circuit and the input value can be a digital input value. The IC can also include a sense circuit monolithically formed on the IC. The sense circuit is configured to generate the input value.

Abstract: A half bridge is described with at least one transistor having a channel that is capable in a first mode of operation of blocking a substantial voltage in at least one direction, in a second mode of operation of conducting substantial current in one direction through the channel and in a third mode of operation of conducting substantial current in an opposite direction through the channel. The half bridge can have two circuits with such a transistor.

Abstract: A circuit for a phase connection of an inverter includes upper and lower bridge halves and respectively associated upper and lower bridge segments. Each bridge half has an outer switch and an inner switch connected in series. Each bridge segment has a diode and the inner switch of the associated bridge half connected in series. An output of the circuit is respectively connected to upper and lower potentials through the outer switches and is further connected to a center potential applied between the upper and lower potentials through each of the upper and lower bridge segments. Each bridge half further has a parallel power switch. The parallel switch of each bridge half is connected in parallel to the series-connected outer and inner switches of the bridge half. The output of the circuit is further respectively connected to the upper and lower potentials through the parallel switches.

Abstract: A half bridge is described with at least one transistor having a channel that is capable in a first mode of operation of blocking a substantial voltage in at least one direction, in a second mode of operation of conducting substantial current in one direction through the channel and in a third mode of operation of conducting substantial current in an opposite direction through the channel. The half bridge can have two circuits with such a transistor.

Abstract: Power switching circuits including an inductive load and a switching device are described. The switches devices can be either low-side or high-side switches. Some of the switches are transistors that are able to block voltages or prevent substantial current from flowing through the transistor when voltage is applied across the transistor.

Abstract: An electronic component comprising a half bridge adapted for operation with an electrical load having an operating frequency is described. The half bridge comprises a first switch and a second switch each having a switching frequency, the first switch and the second switch each including a first terminal, a second terminal, and a control terminal, wherein the first terminal of the first switch and the second terminal of the second switch are both electrically connected to a node. The electronic component further includes a filter having a 3 dB roll-off frequency, the 3 dB roll-off frequency being less than the switching frequency of the switches but greater than the operating frequency of the electrical load. The first terminal of the filter is electrically coupled to the node, and the 3 dB roll-off frequency of the filter is greater than 5 kHz.

Abstract: A semiconductor device includes a variable resistor that sets a resistance value as a first resistance value in an emphasis mode, and as a second resistance value smaller than the first resistance value in a de-emphasis mode, a first driver that sets an output impedance as a third resistance value in the emphasis mode, and as a fourth resistance value larger than the third resistance value in the de-emphasis mode, a second driver that sets the output impedance as a fifth resistance value in the emphasis mode, and as a sixth resistance value larger than the fifth resistance value in the de-emphasis mode, and a controller that controls conductive states of the first and second drivers according to an input signal, and switches the output impedances of the first and second drivers and the resistance value of the variable resistor between the emphasis mode and the de-emphasis mode.

Abstract: An apparatus is provided. A first switch is coupled between first and third nodes in an H-bridge. A second switch is coupled between first and fourth nodes in the H-bridge. A third switch is coupled between the second and third nodes. A fourth switch is coupled between second and fourth nodes in the H-bridge. A first source-follower is coupled to the first node of the H-bridge and the first supply rail, and the first source-follower is configured to receive a first reference signal. A second source-follower is coupled to the second node of the H-bridge and the second supply rail, and the second source-follower is configured to receive a second reference signal.

Abstract: A half bridge is described with at least one transistor having a channel that is capable in a first mode of operation of blocking a substantial voltage in at least one direction, in a second mode of operation of conducting substantial current in one direction through the channel and in a third mode of operation of conducting substantial current in an opposite direction through the channel. The half bridge can have two circuits with such a transistor.

Abstract: Power switching circuits including an inductive load and a switching device are described. The switches devices can be either low-side or high-side switches. Some of the switches are transistors that are able to block voltages or prevent substantial current from flowing through the transistor when voltage is applied across the transistor.

Abstract: The present invention relates to a DC to AC inverter comprising a plurality of voltage controlled switching devices, where one or more of the voltage controlled switching devices is driven by a drive circuit comprising: a bridge switching circuit (59), a transformer (28) with a primary winding (29) and a secondary-winding (30), a transition selection circuit (60) coupled to a control terminal of a respective voltage controlled switching device (40) of the inverter, at least one inductance (37) that forms at least one resonant circuit with the input capacitance (41) of the control terminal, wherein the bridge switching circuit (59) can be operated to generate drive pulses via the selection circuit (60) to operate the respective voltage controlled switching device (40).

Abstract: A half bridge is described with at least one transistor having a channel that is capable in a first mode of operation of blocking a substantial voltage in at least one direction, in a second mode of operation of conducting substantial current in one direction through the channel and in a third mode of operation of conducting substantial current in an opposite direction through the channel. The half bridge can have two circuits with such a transistor.

Abstract: Power switching circuits including an inductive load and a switching device are described. The switches devices can be either low-side or high-side switches. Some of the switches are transistors that are able to block voltages or prevent substantial current from flowing through the transistor when voltage is applied across the transistor.

Abstract: A circuit for a phase connection of an inverter includes upper and lower bridge halves and respectively associated upper and lower bridge segments. Each bridge half has an outer switch and an inner switch connected in series. Each bridge segment has a diode and the inner switch of the associated bridge half connected in series. An output of the circuit is respectively connected to upper and lower potentials through the outer switches and is further connected to a center potential applied between the upper and lower potentials through each of the upper and lower bridge segments. Each bridge half further has a parallel power switch. The parallel switch of each bridge half is connected in parallel to the series-connected outer and inner switches of the bridge half. The output of the circuit is further respectively connected to the upper and lower potentials through the parallel switches.

Abstract: Gate drivers for wide bandgap (e.g., >2 eV) semiconductor junction field effect transistors (JFETs) capable of operating in high ambient temperature environments are described. The wide bandgap (WBG) semiconductor devices include silicon carbide (SiC) and gallium nitride (GaN) devices. The driver can be a non-inverting gate driver which has an input, an output, a first reference line for receiving a first supply voltage, a second reference line for receiving a second supply voltage, a ground terminal, and six Junction Field-Effect Transistors (JFETs) wherein the first JFET and the second JFET form a first inverting buffer, the third JFET and the fourth JFET form a second inverting buffer, and the fifth JFET and the sixth JFET form a totem pole which can be used to drive a high temperature power SiC JFET. An inverting gate driver is also described.

Abstract: A low-side off-detection signal compares the gate signal of a low-side transistor with a predetermined first level to generate a low-side off-detection signal indicating that the low-side transistor is off. The low-side detection transistor is of the same type as the low-side transistor, with the source connected to the ground terminal, and the gate receiving the low-side transistor gate signal. A first resistor is arranged between the drain of the low-side detection transistor and the power supply terminal. A first bypass circuit is arranged in parallel with the first resistor, and is configured to switch to the conduction state when a control signal is a level which instructs the low-side transistor to switch off, and to switch to the cut-off state when the control signal level instructs the low-side transistor to switch on. The drain signal of the low-side detection transistor is output as the low-side off-detection signal.

Abstract: A method for rendering a half-bridge circuit containing normally on switches such as junction field effect transistors (JFETs) inherently safe from uncontrolled current flow is described. The switches can be made from silicon carbide or from silicon. The methods described herein allow for the use of better performing normally on switches in place of normally off switches in integrated power modules thereby improving the efficiency, size, weight, and cost of the integrated power modules. As described herein, a power supply can be added to the gate driver circuitry. The power supply can be self starting and self oscillating while being capable of deriving all of its source energy from the terminals supplying electrical potential to the normally on switch through the gate driver. The terminal characteristics of the normally on switch can then be coordinated to the input-to-output characteristics of the power supply.

Abstract: A PWM mode for turning on and off two output transistors by an output of a high impedance circuit and a constant voltage mode for controlling voltages at two output terminals by an output of an op amp are provided. Then, the two modes are switched by a switching signal.

Abstract: A transistor driver includes an inductor coupled to a gate terminal of a transistor and a switching circuit coupled to the inductor and configured to charge a capacitance at a gate terminal of the transistor from a source via the inductor responsive to a first state of a control input, to block discharge of the charged capacitance responsive to a voltage at the gate terminal and to return charge from the charged capacitance to the source responsive to transition of the control input to a second state. The switching circuit may include a switch coupled in series with the inductor and the source and configured to conduct responsive to transition of the control input to the first state and a rectifier coupled in series with the inductor and the source and configured to block discharge of the charged capacitance responsive to the voltage at the gate terminal.

Abstract: Techniques to generate boosted multi-level switched output voltages from a boosted multi-level Class D amplifier. The amplifier may include a multi-level H-bridge, which may include pairs of transistor switches coupled to a first, second, and third supply potential. The second supply potential may be a boosted representation of the first supply potential. The amplifier may receive an input signal, and from the input signal may generate pulse-modulated control signals to control the switching for the transistor switches of the multi-level H-bridge. The amplifier may generate the boosted multi-level switched output voltages from output nodes of the multi-level H-bridge.

Abstract: A method and an arrangement are provided for balancing the switching transient behavior of parallel connected power semiconductor components. The method includes providing a switch signal to the parallel connected power semiconductor components for changing the state of the components, forming control signals for each of the parallel connected components from the switch signal, and determining, during the change of state of the power semiconductor component, the voltage induced to an inductance in the main current path of the component in each of the parallel connected components. The method also includes comparing each of the induced voltages with a predetermined threshold voltage, measuring time differences between the time instants at which the induced voltages crosses the threshold voltage, and modifying one or more of the control signals on the basis of the measured time differences in the respective following state change for balancing the switching transient behavior.

Abstract: Malfunction attributable to an induced electromotive force such as a back electromotive force or a regenerative braking force of an inductive load in a load driving device is prevented. When an on-state current flows in an output transistor, a second transistor applies a supply voltage applied to a source of the output transistor to a back gate of the first transistor. On the other hand, when a negative current flows in the output transistor in a direction opposite to that of the on-state current, the second transistor applies a supply voltage applied to a drain of the output transistor to the back gate of the first transistor.

Abstract: In one embodiment, the invention comprises a MOSFET comprising individual MOSFET cells. Each cell comprises a U-shaped well (228) (P type) and two parallel sources (260) (N type) formed within the well. A plurality of source rungs (262) (doped N) connect sources (260) at multiple locations. Regions between two rungs (262) comprise a body (252) (P type). These features are formed on an N-type epitaxial layer (220), which is formed on an N-type substrate (216). A contact (290) extends across and contacts a plurality of source rungs (262) and bodies (252). Gate oxide and a gate contact overlie a leg of a first well and a leg of a second adjacent well, inverting the conductivity responsive to a gate voltage. A MOSFET comprises a plurality of these cells to attain a desired low channel resistance. The cell regions are formed using self-alignment techniques at several states of the fabrication process.

Abstract: Power switching circuits including an inductive load and a switching device are described. The switches devices can be either low-side or high-side switches. Some of the switches are transistors that are able to block voltages or prevent substantial current from flowing through the transistor when voltage is applied across the transistor.

Abstract: A semiconductor device includes a first conductive type first transistor, a first conductive type second transistor, a first power supply pad arranged between the first transistor and the second transistor and supplying a first potential, a second conductive type third transistor, a second conductive type fourth transistor, a second power supply pad arranged between the third transistor and the fourth transistor and supplying a second potential, a first output pad arranged between the first transistor and the third transistor, and a second output pad arranged between the second transistor and the fourth transistor, in which a direction in which a line connecting the first power supply pad with the second power supply pad extends is perpendicular to a direction in which a line connecting the first output pad with the second output pad extends.

Abstract: A power transistor is arranged between an output terminal and a power supply terminal. A pre-driver includes a high-side transistor and a low-side transistor connected in series between the power supply terminal and a second terminal, and the ON/OFF operations of which are controlled in a complementary manner according to a control signal. The electric potential at a connection node between the two transistors is output to a control terminal of the power transistor. A constant voltage circuit stabilizes the second terminal to a predetermined voltage. An output transistor for the constant voltage circuit is provided between the second terminal and the ground terminal. A differential amplifier adjusts the voltage applied to the control terminal of the output transistor such that the electric potential at the second terminal approaches a predetermined target value. A feedback capacitor is provided between the second terminal and the control terminal of the output transistor.

Abstract: Provided is a physical quantity sensor capable of improving physical quantity detection precision thereof. The physical quantity sensor includes a bridge resistance type physical quantity detection element for generating a voltage based on a bias current and a physical quantity, a current supply circuit for supplying the bias current to the physical quantity detection element, and a leakage current control circuit for causing leakage currents flowing when switches of the current supply circuit are in an off state to flow into a ground terminal.

Abstract: The invention relates to an apparatus and method for driving high-side switching devices in an H-Bridge circuit. The apparatus includes first and second N-Channel high-side switching devices. Each of the high-side switching devices is associated with, and is selectively driven by, a driver circuit. Each of the driver circuits is associated with, and is powered from, a bootstrap capacitor. The apparatus further includes a cross-couple circuit that is arranged to charge each of the bootstrap capacitors based, at least in part, on whether the low-side switching device that is associated with the other bootstrap capacitor is open or closed.

Abstract: It is possible to reliably prevent two switching elements comprising a half-bridge circuit from turning ON simultaneously even when two pulse signals allowing both the two switching elements to turn ON are input thereto. A first drive signal is allowed to be output from a first output terminal 4 to a P-type MOSFET 10 based on a first pulse signal and a second pulse signal, and a second drive signal is allowed to be output from a second output terminal 5 to an N-type MOSFET 11 that operates as a second switching element based on the first pulse signal and the second pulse signal, and a protecting circuit 20 is configured to allow at least one of the P-type MOSFET 10 and the N-type MOSFET 11 to turn OFF.

Abstract: A low-side off-detection signal compares the gate signal of a low-side transistor with a predetermined first level to generate a low-side off-detection signal indicating that the low-side transistor is off. The low-side detection transistor is of the same type as the low-side transistor, with the source connected to the ground terminal, and the gate receiving the low-side transistor gate signal. A first resistor is arranged between the drain of the low-side detection transistor and the power supply terminal. A first bypass circuit is arranged in parallel with the first resistor, and is configured to switch to the conduction state when a control signal is a level which instructs the low-side transistor to switch off, and to switch to the cut-off state when the control signal level instructs the low-side transistor to switch on. The drain signal of the low-side detection transistor is output as the low-side off-detection signal.

Abstract: Gate drivers for wide bandgap (e.g., >2 eV) semiconductor junction field effect transistors (JFETs) capable of operating in high ambient temperature environments are described. The wide bandgap (WBG) semiconductor devices include silicon carbide (SiC) and gallium nitride (GaN) devices. The driver can be a non-inverting gate driver which has an input, an output, a first reference line for receiving a first supply voltage, a second reference line for receiving a second supply voltage, a ground terminal, and six Junction Field-Effect Transistors (JFETs) wherein the first JFET and the second JFET form a first inverting buffer, the third JFET and the fourth JFET form a second inverting buffer, and the fifth JFET and the sixth JFET form a totem pole which can be used to drive a high temperature power SiC JFET. An inverting gate driver is also described.

Abstract: A half bridge is described with at least one transistor having a channel that is capable in a first mode of operation of blocking a substantial voltage in at least one direction, in a second mode of operation of conducting substantial current in one direction through the channel and in a third mode of operation of conducting substantial current in an opposite direction through the channel. The half bridge can have two circuits with such a transistor.

Abstract: A method for rendering a half-bridge circuit containing normally on switches such as junction field effect transistors (JFETs) inherently safe from uncontrolled current flow is described. The switches can be made from silicon carbide or from silicon. The methods described herein allow for the use of better performing normally on switches in place of normally off switches in integrated power modules thereby improving the efficiency, size, weight, and cost of the integrated power modules. As described herein, a power supply can be added to the gate driver circuitry. The power supply can be self starting and self oscillating while being capable of deriving all of its source energy from the terminals supplying electrical potential to the normally on switch through the gate driver. The terminal characteristics of the normally on switch can then be coordinated to the input-to-output characteristics of the power supply.

Abstract: In accordance with the present invention, there is provided a circuit and method for providing a switchable strong pulldown for a power FET in an off state to avoid inadvertent or false turn ons. A strong pulldown is provided to the gate of a power FET to avoid inadvertent turn on during output swings. In other cases, the gate of the power FET is pulled down weakly to reduce EMI and voltage noise in the circuit. In a particular exemplary embodiment, the present invention provides a circuit and method for obtaining a strong pulldown on the gate of a power FET in an off state, while providing a weak pulldown during turn on to turn off transitions. The invention avoids false turn ons during fast output transitions while maintaining relatively high EMI protection.

Abstract: A method for controlling a vertical type MOSFET in a bridge circuit is provided to reduce diode power loss and improve a reverse recovery characteristic. The method includes controlling a forward voltage of a built-in diode of the vertical type MOSFET to be a first forward voltage by setting a gate voltage of the vertical MOSFET to a first gate voltage, so that the vertical type MOSFET is switched into a first off mode; and controlling the forward voltage of the built-in diode of the vertical type MOSFET to be a second forward voltage by setting the gate voltage of the vertical MOSFET to a second gate voltage, so that the vertical type MOSFET is switched into a second off mode.

Abstract: A high current end power stage comprises at least four power transistors, two electrical supply lines and a safety fuse. The at least four power transistors have each a diode which is blocked during normal operation of the respective power transistor. The two electrical supply lines couple the at least four power transistors with a supply potential and a reference potential such that two of the at least four power transistors are connected electrically between the supply potential and the reference potential. The safety fuse is connected in series to the at least four power transistors in at least one of the two electrical supply lines. The at least one safety fuse can be triggered by a current which flows through the diode of the at least four power transistors, said diode being then arranged in the direction of conduction, when the supply potential and reference potential are exchanged.

Abstract: A low power differential signaling transmitter includes a switchable current source apparatus and a differential signaling generator coupled to the switchable current source apparatus. The switchable current source apparatus receives a first input voltage and a second input voltage, and generates a plurality of reference currents according to the first input voltage and the second input voltage. The differential signaling generator includes a plurality of first transistors, a plurality of second transistors, a first output voltage terminal and a second output voltage terminal. The on or off states of the first transistors and the second transistors are controlled by the reference currents. The first output voltage terminal outputs a first output voltage, and the second output voltage terminal outputs a second output voltage. The first output voltage and the second output voltage are determined according to the on or off states of the first and second transistors.

Abstract: A method for rendering a half-bridge circuit containing normally on switches such as junction field effect transistors (JFETS) inherently safe from uncontrolled current flow is described. The switches can be made from silicon carbide or from silicon. The methods described herein allow for the use of better performing normally on switches in place of normally off switches in integrated power modules thereby improving the efficiency, size, weight, and cost of the integrated power modules. As described herein, a power supply can be added to the gate driver circuitry. The power supply can be self starting and self oscillating while being capable of deriving all of its source energy from the terminals supplying electrical potential to the normally on switch through the gate driver. The terminal characteristics of the normally on switch can then be coordinated to the input-to-output characteristics of the power supply.

Abstract: A driving device and driving method for controlling electric power to a load is provided. The driving device controls switching operations of switching elements by setting a first duration in which electric power is supplied to the load and by setting a second duration in which the load is floated without electric power. The driving device feeds back an output signal outputted from output terminals of the load, receives an input signal, and compares the fed back output signal with the input signal to detect an error. The driving device also generates an error suppression signal to correct the detected error and controls the switching operation of the switching elements based on the error suppression signal.

Abstract: A system for controlling an electronic driver for a nebuliser or aerosol, the system comprising: an H-bridge driver for connection around a membrane to be driven; a voltage source for applying a voltage to the H-bridge driver; a feedback loop from the H-bridge to a phase shift oscillator, the output of which enters the H-bridge driver; wherein the H-bridge driver includes at least one sense resistor for detecting the phase angle between the applied voltage to the H-bridge driver and the applied current.

Abstract: A method for rendering a half-bridge circuit containing normally on switches such as junction field effect transistors (JFETs) inherently safe from uncontrolled current flow is described. The switches can be made from silicon carbide or from silicon. The methods described herein allow for the use of better performing normally on switches in place of normally off switches in integrated power modules thereby improving the efficiency, size, weight, and cost of the integrated power modules. As described herein, a power supply can be added to the gate driver circuitry. The power supply can be self starting and self oscillating while being capable of deriving all of its source energy from the terminals supplying electrical potential to the normally on switch through the gate driver. The terminal characteristics of the normally on switch can then be coordinated to the input-to-output characteristics of the power supply.