Abstract: Activation of an external sensor coupled to an electronic device will change the frequency of a low power oscillator in the electronic device that runs during a low power sleep mode of the electronic device. When a change in frequency of the low power oscillator is detected, the electronic device will wake-up from the low power sleep mode. In addition, when a change in frequency from an external frequency source is detected, the electronic device will wake-up from the low power sleep mode.

Abstract: To reduce the consumption current of the backup power supply of an absolute multi-revolution encoder thereby to elongate the life time of the backup power supply. Magnetic field detection elements (310) and (320) detect a magnetic material member (11) formed at a rotary disc (1). An A pulse generation portion (31) and a B pulse generation portion (32) generate an A pulse a and a B pulse b which phases differ by 90 degrees to each other. The B pulse generation portion (32) is supplied with the power from a backup power supply for a predetermined time period necessary for detecting the level of the B pulse from a time point of the edge of the A pulse.

Abstract: A leakage current prevention circuit for preventing a power source from being affected by leakage current includes a first transistor, and a second transistor. A gate of the first transistor receives a control signal and a source of the first transistor is grounded. A gate of the second transistor is connected to a drain of the first transistor, a drain of the second transistor is electrically connected to the power source, and a source of the second transistor is connected to a pull-up circuit which is connected to a chipset. When the chipset receives a drive signal, the control signal controls status of the first and second transistors so that the power source provides voltage to the pull-up circuit for the drive signal.

Abstract: A method of reducing power consumption while maintaining performance characteristics and avoiding costly over-design of a high-speed communication link embedded in an SOC is provided. The method includes synthesizing the communication link at a reduced voltage to determine and isolate circuitry that is supply-voltage-critical from circuitry that is non-supply-voltage-critical. The supply-voltage-critical circuitry contains components that may not operate at the reduced voltage without degrading the performance characteristics of the communication link. A non-reduced voltage is used to drive the supply-voltage-critical circuitry while the reduced voltage is used to drive the non-supply-voltage-critical circuitry. The reduced voltage is generated using a voltage regulator embedded in the communication link.

Abstract: An apparatus and method for maintaining a state during a power load change. The apparatus of one embodiment includes a voltage controller coupled to receive a signal from a detector of current change. The detector of current change in this embodiment is coupled to detect change in the current level at a microprocessor and signal a voltage controller of such change, which in turn causes a change in the voltage supplied to the microprocessor. An embodiment of the method comprises using a current detector in detecting current change in a microprocessor, determining according to the current change the power level that is needed to be maintained and increasing the voltage level for a predetermined amount of time to compensate for (any) voltage droop. In an alternative embodiment, a change in power is determined before the change occurs and as such determines the power level needed at the microprocessor.

Abstract: The present invention provides an integrated circuit capable of reducing a leak current and reliably holding data therein in a standby mode. A potential higher than a potential of a second source line is supplied to a first source line. A potential lower than a potential of a first ground line is supplied to a second ground line. A virtual source line and a virtual ground line are respectively connected to the second source line and the first ground line by switches in an operation mode and float thereby in the standby mode. Substrates of MOS transistors are respectively connected to the second source line and the first ground line by switches in the operation mode and connected to the first source line and the second ground line thereby in the standby mode. A gate circuit transmits an output signal of a data non-holding circuit to a data holding circuit in the operation mode and fixes an input signal of the data holding circuit in the standby mode.

Abstract: A voltage supply control circuit is arranged between a true ground voltage and a pseudo ground line. In an active mode, first and second control signals are at the “H” and “L” levels, respectively. In response to this, a first switch is turned on so that a first node is electrically coupled to a power supply voltage, and attains the “H” level. Further, a second switch is turned on to couple electrically the ground voltage to a second node. In a standby mode, the first and second control signals are at the “L” and “H” levels, respectively. In response to this, a third switch is turned on to couple electrically the first and second nodes together. Since the power supply voltage was electrically coupled to the first node according to the turn-on of the first switch in the active mode, the path of the control signal including the first node to the switch has accumulated charged charges.

Abstract: A processing device includes a Phase Locked Loop (PLL) system with an adjustable power supply designed to track the power supply provided to one or more of the cores in the processor device. The PLL no longer operates at a fixed voltage level that is held constant and independent from the requested core frequency or the core digital voltage, but rather the power supply to the phase locked loop is adjusted along with the main power supply to the processor core.

Abstract: This patent specification describes a backflow prevention circuit which includes a first switch configured to conduct or to shut down a current path from an input terminal to an output terminal, a logic circuit configured to binarize an input voltage at the input terminal based on an output voltage at the output terminal and to output a binary signal and a shutdown circuit configured to cause the first switch to shut down independently of a switching control signal in accordance with the binary signal output from the logic circuit. The switching control signal performs a switching control of the first switch. The logic circuit outputs a shutdown signal to shut down independently of the switching control signal when the input voltage becomes smaller than the output voltage.

Abstract: An internal voltage generator is disclosed. The internal voltage generator may include a comparator for controlling a voltage of a first node in response to a voltage difference between a reference voltage and an internal voltage, an internal voltage driving portion connected between a driving node and an internal voltage node to apply the internal voltage to the internal voltage node in response to a voltage level of the first node, and/or a leakage current interrupting portion to apply an external voltage to the first node to deactivate the internal voltage driving portion and to interrupt the external voltage applied to the driving node to interrupt a leakage current.

Abstract: A power management circuit is provided for controlling power dissipation in at least one combinational logic circuit. The power management circuit includes a detector operative to receive at least a first input signal to the combinational logic circuit and to detect a transition of the first input signal between a first logic state and a second logic state. The detector generates a control signal indicative of whether or not a transition of the first input signal has occurred.

Abstract: Embodiments of a dynamic leakage control circuit for use with graphics processor circuitry are described. The dynamic leakage control circuit selectively enables back biasing of the transistors comprising the graphics processor circuits during particular modes of operation. The back biasing levels are controlled by two separate power rails. A first power rail is coupled to an existing power supply and the second power rail is coupled to a separate adjustable voltage regulator. A separate voltage regulator may also be provided for the first power rail. A hardware-based state machine or software process is programmed to detect the occurrence of one or more modes of operation and adjust the voltage regulators for the first and second power rails to either enable or disable the back biasing state of the circuit, or alter the threshold voltage of the circuit within a specified voltage range.

Abstract: A semiconductor device chip, semiconductor device system, and a method. One embodiment provides a semiconductor device chip including a device for determining whether the semiconductor device chip is to be placed in a current saving operating mode.

Abstract: A receiver for receiving a switched signal on a communication line (1), such as a LIN bus, the signal varying between first and second voltage levels (sup, ground). The receiver comprises a comparator (31, 54) responsive to the relative values of the received signal voltage level (Vlin) and an input reference voltage level (Vsup). The comparator (31, 54) comprises a current generator (40, 41) selectively operatble when the recieved signal is asserted to produce an input current (Iin) which is a function of the received signal voltage level (Vlin) and a reference current (Isup) which is a function of the input reference voltage level (Vsup), and output means (28, 32, 31; 55, 56) responsive to the relative values of the input current (Iin) and the reference current (Isup). The output means (28, 32, 31; 56) is supplied with power at a voltage (VDD) substantially lower than the difference between the first and second voltage levels (Vsup, ground).

Abstract: In a bias voltage generating circuit for outputting through switching over a plurality of bias voltages and standby voltages provided for the respective bias voltages, a voltage return unit is provided for each bias voltage, and charges stored in the voltage return unit are supplied before power ON starts so that the bias voltage is approximated to a predetermined voltage. A drive controller drives the voltage return unit and a standby voltage generator, and a period of driving control is arbitrarily set by a register.

Abstract: A charge recycling integrated circuit and a method for integrated circuit charge recycling. In one aspect, a charge storage collector is interposed between a high voltage supply or a low voltage supply and a function block of the integrated circuit. The charge collector is operable to selectively store a charge dissipated in the function block when the logic circuitry of the function block switches between a high voltage value and a low voltage value. The dissipated charge resulting from the switching in the logic circuitry of the function block is selectively stored to the charge collector and the charge collector selectively returns the charge stored on the charge collector to the high voltage supply, the low voltage supply or to another node in the integrated circuit as appropriate.

Abstract: Disclosed is a circuit configured to apply a supply voltage to a switching element (e.g., a transistor). The circuit includes a latch and a processor. The latch is configured to sample a voltage of an output signal of the switching element, and the processor is configured to generate a power adjustment signal to adjust the supply voltage based on the voltage sampled by the latch.

Abstract: A logical battery partitioning approach is disclosed. In one embodiment, a power management system in a portable computing device having a plurality of subsystems can include: (i) a battery coupled to a plurality of subsystems; (ii) a first battery variable provided to a first subsystem to indicate a characteristic of a first logical battery partition; and (iii) a second battery variable provided to a second subsystem to indicate a characteristic of a second logical battery partition. A battery variable can include an accessibility control, or a percent of battery power available, for example.

Abstract: A power gated semiconductor integrated circuit comprises: (1) logic circuit to be power gated, said logic circuit having a virtual ground rail; (2) footer device disposed between said virtual ground rail and a ground rail for reducing power consumption of said logic circuit; and (3) virtual rail voltage clamp disposed electrically in parallel with said footer device for limiting the voltage at the virtual ground rail, the virtual rail voltage clamp comprising at least one NFET. A total of Nf NFETs are connected to the virtual ground rail of the integrated circuit for use as both virtual rail voltage clamps and footer devices. A quantity of Nmax-VC NFETs are scanned and perform the function of voltage clamps and the remaining (Nf?Nmax-VC) NFETs perform power gating. Manufacturing variability immunity and tuning of the variability immunity is achieved by adjusting the quantity Nmax-VC based upon testing of the manufactured integrated circuit.

Abstract: An input circuit includes an input signal transmission circuit configured to output a first transmission signal at a first output node in response to an input signal at an input node, and a Schmitt trigger inverter configured to output a second transmission signal at a second output node in response to the first transmission signal. The input signal transmission circuit includes a voltage drop element connected to the input node and configured to provide a voltage drop between the input node and a transistor having a gate to which a first supply voltage is applied.

Abstract: A semiconductor integrated circuit device for fast and low power operations, comprising a plurality of circuit blocks of a chip, each of which has a plurality of states with different power consumption values. A power management circuit determines the state of each of the circuit blocks so as not to exceed a maximum power consumption value of the semiconductor integrated circuit device by considering the power consumption of each circuit block and by each state transition in each circuit block. The maximum power consumption value may be preset or adjustable after fabrication.

Abstract: In some embodiments, an array of sleep transistors is provided, wherein a combination of said transistors may be enabled during an active mode to reduce leakage depending on the leakage characteristics of a chip or associated chip.

Abstract: Methods and apparatuses to decrease power consumption and reduce leakage current of integrated circuits are disclosed. New leakage power saving techniques for various types of integrated circuits, including cache memory circuits, are discussed. Embodiments comprise methods and apparatuses to reduce power consumption in integrated circuits by using virtual voltage rails, or virtual power rails, to supply power to integrated circuit loads. The methods and apparatuses generally involve using one or two virtual power control devices to “head” and “foot”, or sandwich, the integrated circuit loads from firm power supply rails. In these method embodiments, one or more elements sense the voltage of the virtual power rails, or nodes, and make adjustments to control the voltage at certain “virtual” voltage potentials. While controlling the voltage in this manner, the virtual power control devices may serve to restrict unnecessary current flow through the integrated circuit loads.

Abstract: A semiconductor device operates in an active mode or a standby mode, and includes a substrate-potential power source line supplying a substrate potential which is higher in a standby mode than in an active mode, and a source-potential power source line supplying a source potential which is lower in a standby mode than in an active mode. During a mode shift from the standby mode to the active mode, a potential equalizing transistor is turned ON to pass a current flowing from the substrate-potential power source line to the source-potential power source line, to reduce the time length needed for shifting from the standby mode to the active mode.

Abstract: A power-up/power-down detecting circuit may include a power detecting circuit, a selecting circuit, and a determining circuit. The power detecting circuit may generate a plurality of detection signals based on a plurality of sensing signals corresponding to currents flowing through a plurality of function blocks. The selecting circuit may generate a plurality of selection signals. The determining circuit may generate a power-up completion signal and a power-down completion signal. A semiconductor device having the power-up/power-down detecting circuit may determine in real time the power-up time and the power-down time.

Abstract: In the present invention an apparatus and method for providing compensation against temperature, process and supply voltage variation in MOS circuits has been proposed. The invention provides a change in process, temperature and voltage detection circuit, which controls the body bias and the drive of the devices in the CMOS circuit. The detection circuit is independent of any input or internal signal of the CMOS circuit to be controlled.

Abstract: Power consumption may be reduced through the use of power gating in which power is removed from circuit blocks or portions of circuit blocks in order to reduce leakage current. One embodiment uses a modified state retention flip-flop capable of retaining state when power is removed or partially removed from the circuit. Another embodiment uses a modified state retention buffer capable of retaining state when power is removed or partially removed from the circuit. The state retention flip-flop and buffer may be used to allow for state retention while still reducing leakage current. Also disclosed are various methods of reducing power and retaining state using, for example, the state retention flip-flops and buffers. For example, software, hardware, or a combination of software and hardware methods may be used to enter a deep sleep or idle mode while retaining state.

Abstract: Provided is a semiconductor device that can secure a current consumption characteristic and an operating speed characteristic under a low power voltage environment. The semiconductor device is divided into a plurality of regions depending on the current consumption characteristics. Considering the current consumption characteristics of the corresponding regions, the ground voltage or the negative voltage is supplied as the base voltage. For example, in the memory region or the logic region, which exhibits the single transient low current characteristic, the negative voltage is supplied as the base voltage. On the contrary, in the output driver circuit region, the DLL or the PLL, which exhibits the high current characteristics, the ground voltage is supplied as the base voltage. In this case, the operating speed characteristic can be secured even under the low power supply environment without decreasing the threshold voltage of the transistor.

Abstract: Implementations are presented herein that relate to a circuit arrangement and a method of operating a circuit arrangement.

Abstract: A semiconductor integrated circuit device for fast and low power operations, comprising a plurality of circuit blocks of a chip, each of which has a plurality of states with different power consumption values. A power management circuit determines the state of each of the circuit blocks so as not to exceed a maximum power consumption value of the semiconductor integrated circuit device by considering the power consumption of each circuit block and by each state transition in each circuit block. The maximum power consumption value may be preset or adjustable after fabrication.

Abstract: A leakage current prevention circuit for preventing a power source from being affected by leakage current includes a first transistor, and a second transistor. A gate of the first transistor receives a control signal and a source of the first transistor is grounded. A gate of the second transistor is connected to a drain of the first transistor, a drain of the second transistor is electrically connected to the power source, and a source of the second transistor is connected to a pull-up circuit which is connected to a chipset. When the chipset receives a drive signal, the control signal controls status of the first and second transistors so that the power source provides voltage to the pull-up circuit for the drive signal.

Abstract: A semiconductor integrated circuit has: a first functional block connected to a first power line and a second power line; a second functional block connected to the first power line and the second power line; and a power switch provided between the first power line and the first functional block and configured to cut off electrical connection between the first power line and the first functional block at a time of a standby mode. The first functional block, the second functional block and the power switch include a first MIS transistor, a second MIS transistor and a third MIS transistor, respectively. The first to third MIS transistors are of the same conductivity type. A threshold voltage of the third MIS transistor is lower than that of the second MIS transistor.

Abstract: An integrated circuit includes a functional circuit module operating at a voltage range between a first voltage level and a second voltage level lower than the first voltage level. A power supply switch module, coupled between the functional circuit module and one or more power supplies, is controlled by one or more controlling biases of voltage levels outside the voltage range between the first and second voltage levels for more fully turning on and off the power supply switch module than biases that are within the range between the first and second voltage levels do.

Abstract: A semiconductor device for improving an operation speed of a data input buffer includes: a plurality of data input buffers each for detecting a logic level of an input data by comparing the input data with a reference voltage to output the detected signal as an internal data signal; and a base voltage driving unit for driving a base power supply terminal of each data input buffer with one of a ground voltage and a negative boosted voltage according to an operation mode.

Abstract: An apparatus and method for automatically transitioning the operation of an electronic device to a reduced power consumption state if an input reference clock signal is stopped or no longer synchronized (locked) with the operation of the electronic device. The electronic device is automatically returned to a normal operating/power consumption state if the reference clock is restarted. Mixed analog and digital electronic components are employed to handle the transition of the electronic device between reduced and normal power consumption states. These components can include a phase frequency detector and a lost_lock detection circuit. The lost_lock detection circuit is typically connected to the output of phase frequency detector and outputs a lost_lock signal if the reference clock signal has stopped or lost_lock with a feedback clock signal.

Abstract: A semiconductor integrated circuit includes a pump circuit configured to raise an external power supply voltage to generate a stepped-up voltage, and a detector circuit configured to detect the stepped-up voltage generated by the pump circuit to control activation/deactivation of the pump circuit, wherein the detector circuit includes a differential amplifier configured to compare the stepped-up voltage with a reference voltage, and a current control circuit configured to control an amount of a bias current running through the differential amplifier in response to the activation/deactivation of the pump circuit.

Abstract: Disclosed is a semiconductor apparatus adapted to reduce the inflow of current from an external input terminal in a power saving mode. A mode decision circuit 11 outputs to an interruption circuit 10 and a floating prohibiting circuit 15 a mode signal indicating whether operation of the semiconductor apparatus is power saving mode or regular operating mode. When the mode signal indicates the power saving mode, the interruption circuit 10 is rendered non-conductive to disconnect an external input terminal 13 on one hand and an input capacitance adjustment capacitor 12 and an initial stage input circuit 14 on the other hand from each other. The floating prohibiting circuit 15 also sets the voltage at an input end of the initial stage input circuit 14 at a preset voltage level.

Abstract: An electronic system comprises a plurality of circuit paths. Each path in the plurality of circuit paths is coupled to receive a system voltage from a voltage supply. The system further comprises a first circuit for providing a first value indicating a first potential capability of operational speed of at least one path in the plurality of circuit paths and a second circuit for providing a second value for indicating a second potential capability of operational speed of the at least one path in the plurality of circuit paths. The system further comprises circuitry for adjusting the system voltage, as provided by the voltage supply, in response to a relation between the first value and the second value.

Abstract: A power (voltage) switching circuit in a semiconductor memory device, capable of reducing leakage current in a standby mode of operation and shortening the wake-up time when a standby mode is switched to an operation mode. The power (voltage) switching circuit comprises a first power switch, a second power switch, and a third power switch operatively connected to at least one bitline in a memory cell array, configured to selectively output, as a cell power voltage, a dynamically selected one of a first power supply voltage, a second power supply voltage, and a third power supply voltage, respectively in response to a first, second or third applied switch control signals. The second power supply voltage being higher than the first power supply voltage and, the third power supply voltage being lower than the first power supply voltage.

Abstract: A semiconductor chip may include an internal circuit, at least one power gating transistor, a system manager, and/or at least one current regulator. The at least one power gating transistor may be configured to switch a supply of at least one drive voltage into the internal circuit. The system manager may be configured to generate a control signal corresponding to an activation state of the internal circuit. At least one current regulator may be configured to control an amount of a current flowing through the at least one power gating transistor in response to the control signal.

Abstract: A semiconductor device may include a logic circuit and one or more power gating transistor switches. The logic circuit may be connected between a power voltage and a ground voltage, and may perform one or more logic operations. The one or more power gating transistor switches may include a plurality of power gating transistors and poly resistors, and may switch application of the power voltage to the logic circuit according to an active mode, a sleep mode, or active and sleep modes of the logic circuit. The one or more power gating transistor switches may use the poly resistors to sequentially apply the power voltage to the logic circuit, to sequentially block the application of the power voltage to the logic circuit, or to sequentially apply the power voltage to the logic circuit and to sequentially block the application of the power voltage to the logic circuit.

Abstract: In general, in one aspect, the disclosure describes a programmable power gating circuit that includes a reference voltage generator to generate a reference voltage and a voltage selector, coupled between a voltage source and active circuitry, to gate application of the voltage source to the active circuitry and provide a certain voltage to the active circuitry when the active circuitry is in a reduced capacity mode. The certain voltage is based on the reference voltage.

Abstract: A semiconductor integrated circuit of the invention comprises an internal power supply voltage down circuit which steps down a first external power supply voltage to produce an internal power supply voltage, an input circuit to which the internal power supply voltage is supplied, an internal circuit to which the first external power supply voltage is supplied and which is connected to the input circuit, and an output circuit to which a second external power supply voltage differing from the first external power supply voltage is supplied and which is connected to the internal circuit. The second external power supply voltage is separated from the first external power supply voltage and is lower than the first external power supply voltage.

Abstract: Disclosed is a voltage regulator capable of reducing a set-up time. A driver is connected between a power supply terminal and the output terminal, and supplies a power supply voltage to the output terminal in response to a signal of a control node. A first signal generator provides a first signal to the control node when a voltage of the output terminal is lower than the target voltage. A second signal generator provides a second signal to the control node for a predetermined period of time when the voltage of the output terminal becomes higher than a detection voltage while the first signal generator is providing the first signal to the control node.

Abstract: A semiconductor integrated circuit includes a logic circuit, a first and second switching device and an equalizer. The logic circuit includes a first circuit connected between a power supply voltage and a ground voltage supply line, and a second circuit connected between a power supply voltage supply line and a ground voltage. The first and second switching devices are connected between the power supply voltage and the power supply voltage supply line and between the ground voltage and the ground voltage supply line, respectively. The equalizer is connected between the power supply voltage supply line and the ground voltage supply line, and configured to adjust voltages of the power supply voltage supply line and the ground voltage supply line to be the same during a standby operation.

Abstract: A semiconductor device includes a current mirror circuit having a plurality of transistors; a current source configured to supply a constant reference current to the current mirror circuit through a node; and a compensating circuit configured to supply a compensation current to the node to compensate for at least a part of gate leakage currents of the plurality of transistors. The compensating circuit may supply the compensation current equal to a summation of the gate leakage currents.

Abstract: A device for adaptively controlling a voltage supplied to circuitry in close proximity to the device, comprising a processing module and a first tracking element coupled to the processing module. The first tracking element produces a first value indicative of a first estimated speed associated with the circuitry. The device also comprises a second tracking element coupled to the processing module. The second tracking element produces a second value indicative of a second estimated speed associated with the circuitry. The processing module compares each of the first and second values to respective target values and causes a voltage output to be adjusted based on the comparisons. The first and second tracking elements comprise a plurality of transistors, at least some of the transistors selectively provided with a transistor bias voltage to adjust transistor speed.

Abstract: A supply voltage switching circuit for a computer includes a chipset, a first transistor, a second transistor, and a third transistor. The chipset includes a first MOSFET and a second MOSFET. A 5V system voltage and a 5V standby voltage are respectively inputted to sources of the first MOSFET and the second MOSFET. Gates of the first MOSFET and the second MOSFET are respectively coupled to collectors of the second transistor and the third transistor. A base of the first transistor is coupled to a terminal for receiving a control signal from the computer. The 5V standby voltage is inputted to a collector of the first transistor. Bases of the second transistor and the third transistor are coupled to the collector of the first transistor. A 12V system voltage and the 5V standby voltage are respectively inputted to collectors of the second transistor and the third transistor.

Abstract: A semiconductor device of the invention comprises a logic circuit to which a power supply voltage, a sub-power supply voltage lower than the power supply voltage, a ground voltage and a sub-ground voltage higher than the ground voltage are supplied; a main power supply line supplying the power supply voltage; and a main ground line supplying the ground voltage. A unit circuit constituting the logic circuit includes first to third PMOS transistors and first to third PMOS transistors. The third PMOS transistor is connected between sources of the first and second PMOS transistors, the main power supply line is connected to its one node, and the sub-power supply voltage is generated at its other node. The third NMOS transistor is connected between sources of the first and second NMOS transistors, the main ground line is connected to its one node, and the sub-ground voltage is generated at its other node.

Abstract: An apparatus includes a substrate, a target timing circuit, a leakage timing circuit, and a control unit. The target timing circuit and the leakage timing circuits are formed on the substrate. The target timing circuit has a target timing circuit frequency related to a target frequency. The leakage timing circuit has a leakage timing circuit frequency related to a leakage current. The control unit maintains a substantially constant ratio between the target timing circuit frequency and the leakage timing circuit frequency. A method includes generating a first signal related to a target circuit frequency, generating a second signal related to a leakage current, and adjusting a control signal applied to a substrate to maintain a substantially constant frequency ratio between a first signal and the second signal.