Abstract: A hybrid integrated circuit in a wafer level package for an implantable medical device includes one or more passive component windings formed, at least in part, along one or more routing layers of the package. The windings may be primary and secondary windings of a transformer, wherein all or part of a magnetic core thereof is embedded in a component layer of the wafer level package. If the core includes a part bonded to a surface of the package, that part of the core may be E-shaped with legs extending into the routing layers, and, in some cases, through the routing layers. Routing layers may be formed on both sides of the component layer to accommodate the transformer windings, in some instances.

Abstract: Various systems and methods utilizing a digitally controlled oscillator having frequency steps that increase in magnitude as a target output clock frequency increases are described. An integrated circuit in accordance with the disclosure includes a plurality of first transistor units fixedly coupled to an input voltage and a plurality of second transistor units switchably coupled to the first transistor units. An output coupled to the plurality of second transistor units and the plurality of first transistor units conveys an output signal having a frequency dependent on which select ones of the second transistor units are enabled. The plurality of second transistor units include a first switchable transistor unit having a transistor of a first width, a second switchable transistor unit having a transistor of a second width greater than the first width, and a third switchable transistor unit having a transistor of a third width greater than the second width.

Abstract: A self-healing monolithic integrated includes an electronic circuit having a plurality of transistors. At least one sensor is disposed within and electrically coupled to the electronic circuit and configured to sense a performance metric of the electronic circuit. A plurality of actuators is disposed within the circuit. Each actuator of the plurality of actuators has electrically coupled to it a control terminal. The plurality of actuators is configured to perform a selected one of, electrically coupling at least one transistor of the plurality of transistors into the electronic circuit and electrically de-coupling at least one transistor of the plurality of transistors, in response to operation of one of the control terminals to improve the performance metric.

Abstract: A programmable device, having an analog component coupled with an analog bus and a digital component coupled with a digital bus together with a set of IO pads, each of which capable of being coupled to a bus line of one segment of the analog bus as well as to at least one digital bus line, and where the analog bus is capable of being used to connect a pair of the IO pads to each other.

Abstract: A diode-switch logic circuit of the present invention is configured such that: at least one of paths between a common input-output terminal and respective individual input-output terminals is caused to become a conducting state; control voltages of control terminals are respectively applied to gates of path switching FET stages; logic synthesis voltages of the control voltages of the control terminals are respectively applied to gates of shunt FET stages; and each of the logic synthesis voltages is generated by a logical product of a logical negation of the control voltage applied to one shunt FET stage and a logical sum of the control voltages respectively applied to the remaining shunt FET stages.

Abstract: Described herein is an integrated circuit which comprises: a first buffer, with positive trans-conductance, to drive a first signal with first phase; and a second buffer, with negative trans-conductance, to drive a second signal with second phase, wherein the first buffer and the second buffer are cross-coupled to one another.

Abstract: Provided is an integrated circuit (IC) having a stacked structure. The IC includes: a first IC having a power input terminal to which a power supply voltage is applied; and a second IC having a power input terminal connected to a ground terminal of the first IC, having a central node formed as the power input terminal of the second IC and the ground terminal of the first IC are connected to each other and to which a voltage is applied, and having a ground terminal connected to a ground source, wherein the power supply voltage is divided into first and second voltages that are respectively applied to the first and second ICs.

Abstract: A system of interconnected chips comprising a multi-chip module (MCM) includes a first processor chip, a graphics processing cluster (GPC) chip, and an MCM package configured to include the first processor chip, the GPC chip, and an interconnect circuit. The first processor chip is configured to include a first ground-referenced single-ended signaling interface circuit. A first set of electrical traces fabricated within the MCM package and configured to couple the first single-ended signaling interface circuit to the interconnect circuit. The GPC chip is configured to include a second single-ended signaling interface circuit and to execute shader programs. A second set of electrical traces fabricated within the MCM package and configured to couple the second single-ended signaling interface circuit to the interconnect circuit. In one embodiment, each single-ended signaling interface advantageously implements ground-referenced single-ended signaling.

Abstract: A system of interconnected chips comprising a multi-chip module (MCM) includes a first processor chip, a second processor chip, and an MCM package configured to include the first processor chip, the second processor chip, and an interconnect circuit. The first processor chip is configured to include a first ground-referenced single-ended signaling (GRS) interface circuit. A first set of electrical traces fabricated within the MCM package and configured to couple the first GRS interface circuit to the interconnect circuit. The second processor chip is configured to include a second GRS interface circuit. A second set of electrical traces fabricated within the MCM package and configured to coupled the second GRS interface circuit to the interconnect circuit.

Abstract: The semiconductor device includes a plurality of first flat plates containing a material that absorbs an electromagnetic wave at a high frequency. Any of the first flat plates is disposed above the first connecting wire, and any other of the first flat plates is disposed above the second connecting wire.

Abstract: A stack package having a plurality of stacked chips includes first voltage dropping units respectively formed in the plurality of chips, the first voltage dropping units are electrically coupled by a first line; second voltage dropping units respectively formed in the plurality of chips, the second dropping units are electrically coupled by a second line; first signal generation units respectively formed in the plurality of chips, each of the first signal generation units is connected to an output node of the first voltage dropping units, respectively; and second signal generation units respectively formed in the plurality of chips, each of the second signal generation units is connected to an input node of the second voltage dropping units, respectively.

Abstract: A semiconductor integrated circuit includes a logic circuit having a plurality of operation modes, a power source circuit that generates a power source voltage to be supplied to the logic circuit, a power source wiring that couples the power source circuit and the logic circuit, and a charge control block that holds charges for controlling the voltage of the power source wiring. The power source circuit generates a first power source voltage for causing the logic circuit to operate in a computing mode and a second power source voltage for causing the logic circuit to operate in a sleep mode. The charge control block includes a capacitor, a first switch, and a voltage supply unit that supplies the second power source voltage or a third power source voltage lower than the second power source voltage, to the capacitor.

Abstract: A Schottky diode having a current leakage protection structure includes a Schottky diode unit, a first isolation portion and a second isolation portion. The Schottky diode unit is defined in a substrate and includes a metalized anode, an active region having dopants of first conductive type, a cathode and at least one isolation structure. The first isolation portion having dopants of second conductive type is formed between substrate and active region, and the first isolation portion includes a first well disposed beneath active region, and a first guard ring surrounding active region and connecting to the first well. The second isolation portion having dopants of first conductive type is formed between substrate and the first isolation portion, and the second isolation portion includes a second well disposed beneath the first well, and a second guard ring surrounding the first guard ring and connecting to the second well.

Abstract: A first instance and a second instance of an oscillating circuit are each formed as part of an integrated circuit and are used to monitor degradation over time of one or more portions of the integrated circuit. The first instance of the oscillating circuit is configured to be coupled to a power source during normal operation of the integrated circuit and the second instance is configured to be decoupled from the power source. Over the lifetime of the integrated circuit, the first instance undergoes degradation from use while the second instance of the oscillating circuit remains unpowered, therefore experiencing essentially no use-related degradation. During a testing operation, the second instance can be used as a reference circuit that accurately quantifies use-related degradation of the first instance of the oscillating circuit and, by extension, one or more portions of the integrated circuit.

Abstract: A semiconductor device includes a first transistor connected to an internal voltage terminal and a first node at which a first resistance unit is connected. The first resistance unit includes a resistor connected between the first node and a node from which a monitoring voltage is provided for controlling the first transistor. This resistance unit also includes a first resistance adjustment unit connected in parallel with the first resistor. Also included is a second resistance unit having a third resistor connected between the monitor node and a second node which is connected to a ground potential and a second resistance adjustment unit connected in parallel with the third resistor. A comparator comparing the monitor node voltage to a reference is provided with an output terminal connected the first transistor. Also included is a control circuit to control the resistance adjustment units.

Abstract: Three dimensional integrated circuits including semiconductive organic materials are described. In some embodiments, the three dimensional integrated circuits include one or more electronic components that include a semiconductive region formed of one or more semiconductive organic materials. The electronic components of the three dimensional integrated circuits may also include insulating regions formed from organic insulating materials, and conductive regions form from conductive materials. The three dimensional integrated circuits may be formed by an additive manufacturing process such as three dimensional printing. Apparatus and methods for producing and testing three dimensional integrated circuits are also described.

Abstract: This invention discloses a double Through Silicon Via (TSV) structure, including a first die unit, a first signal path, a second signal path, a receiving unit and a second die unit. The first and the second signal paths respectively include a driving unit and a TSV unit. Each driving unit includes a first end, a second end and a third end. The invention divides the signal paths of the conventional double TSV into two different signal paths by two driving units and the receiving unit having OR gate or NOR gate, to avoid generating the problem of signal degradation from the TSV unit with short defect. The invention further disposes a first switch unit, a second switch unit, a first exchange unit, a second exchange unit, a first VDD keeper and a second VDD keeper, to avoid generating the problems of open defect and leakage current.

Abstract: An apparatus and method are disclosed for providing test mode contact pad reconfigurations that expose individual internal functional modules or block groups in an integrated circuit for testing and for monitoring. A plurality of switches between each functional module switches between passing internal signals among the blocks and passing in/out signals external to the block when one or more contact pads are strapped to input a pre-determined value. Another set of switches between the functional modules and input/output contact pads switch between functional inputs to and from the functional modules and monitored signals or input/output test signals according to the selected mode of operation.

Abstract: The interposer 30 is disposed on an upper surface of the stacked structure 24 formed by stacking a plurality of a DRAM chip 20 and a plurality of a flash memory chip 22. Thus down-size of an entire device is accomplished. A boost converter having an inductor is used as a voltage boost circuit 40. Thus down-size of the entire device is accomplished.

Abstract: A reconfigurable integrated circuit (IC) has IC interface terminals including circuit input terminals and circuit output terminals. A bypass controller and bypass circuitry are coupled to each other, and to at least one of the circuit input terminals and at least one of the circuit output terminals. A processing circuit has multiple circuit modules coupled to the bypass circuitry. The processing circuit is coupled to at least one of the circuit input terminals and at least one of the circuit output terminals. In operation the bypass controller controls the bypass circuitry to selectively couple at least one pair of the IC interface terminals together, the pair including one of the circuit input terminals and one of the circuit output terminals. When the pair of IC interface terminals are coupled together, at least one of the circuit modules is selectively de-coupled from the pair of the IC terminals.

Abstract: A logic signal isolator comprising a transformer having a primary winding and a secondary winding; a transmitter circuit which drives said primary winding in response to a received logic signal, such that in response to a first type of edge in the logic signal, a signal of a first predetermined type is supplied to the primary winding and in response to a second type of edge in the logic signal, a signal of a second predetermined type is supplied to said primary winding, the primary winding and the transmitter being referenced to a first ground; and the secondary winding being referenced to a second ground which is galvanically isolated from the first ground and said secondary winding supplying to a receiver circuit signals received in correspondence to the signals provided to the primary winding, the receiver reconstructing the received logic signal from the received signals.

Abstract: A printed circuit board includes multiple receiving components for respectively receiving control signals and a transmitting component coupled to the receiving component through multiple leads. Given that the lengths of the leads may be different to each other, the control unit generates the control signals to the leads according to the information about the leads, and firstly delivers at least one of the control signals to the corresponding receiving component(s), and then delivers the remaining control signals to the receiving components after a predetermined time. Furthermore, a method for controlling a signal sequence for the printed circuit board includes generating multiple control signals depending on the information about leads and delivering at least one of the control signals to the corresponding receiving component and delivering the remaining control signals to the remaining receiving components after the predetermined time.

Abstract: An integrated circuit comprising: a first core circuit configured to operate at a first clock rate for carrying out a first range of tasks; and a second core circuit configured to operate in a first mode and a second mode, the second core circuit being configured to operate at a second clock rate for carrying out a second range of tasks in the second mode and being configured to operate in the second mode when the first core circuit carries out the first range of tasks, the second clock rate being greater than the first clock rate.

Abstract: Disclosed is a semiconductor device that suppresses stress-induced resistance value changes. The semiconductor device includes a resistance correction circuit. The resistance correction circuit includes a first resistor whose stress-resistance value relationship is a first relationship, a second resistor whose stress-resistance value relationship is a second relationship, and a correction section that controls the resistance value of a correction target resistor. The correction section detects the difference between the resistance value of the first resistor and the resistance value of the second resistor and corrects, in accordance with the result of detection, the resistance value of the correction target resistor.

Abstract: Among other things, an inductor comprising a conductive trace and a method for forming the inductor are provided. The inductor comprises a magnetic structure, such as a ferrite core. A molding material, such as a dielectric, is formed around the magnetic structure. A conductive trace, comprising one or more conductive pillars interconnected by one or more upper interconnects and one or more lower interconnects, is formed around the magnetic structure to form the inductor. The conductive trace allows physical limitations associated with winding a wire to be avoided, and thus allows the inductor to be smaller than wire wound inductors. In one example, the inductor is formed within an integrated circuit package comprising an active device, such as an integrated circuit. In this way, the inductor can be connected to the integrated circuit within the integrated circuit package.

Abstract: An integrated circuit comprising a plurality of metal programmable revision identification (MPRI) cells, wherein each MPRI cell further comprises a plurality of metal layers, a plurality of vias and an output.

Abstract: A wide bandwidth resonant clock distribution comprises a clock grid configured to distribute a clock signal to a plurality of components of an integrated circuit, at least one inductor, at least one tunable resistance switch, and a capacitor network. The inductor, tunable resistance switch, and capacitor network are connected between the clock grid and a reference voltage. The at least one tunable resistance switch is programmable to dynamically switch the at least one inductor in or out of the clock distribution to effect at least one resonant mode of operation or a non-resonant mode of operation based on a frequency of the clock signal.

Abstract: For multi-level interconnect metallization, each metal level maintains a parallel line arrangement within a region, and the lines of each adjacent metal level are orthogonal or otherwise cross with one another. Vertical shunting among levels for routing in different directions employs short paddles that stay within the parallel scheme, and multiple paddles within a region at the same metal level can be co-linear. Parallel lines in the same metal level can be rotated with respect to one another in adjacent regions, for example to better interface with driver circuitry with orthogonal orientations in the different regions.

Abstract: Through silicon vias (TSVs) in a stacked multi-die integrated circuit package are controlled to assume different connection configurations as desired during field operation of the package in its normal mission mode. TSV connections may be reconfigured to connect an affected die in a manner different from, for example, a factory default connection of that die. TSV connections to the inputs and/or outputs of a die's native circuitry may be changed. A die may be disconnected altogether from an interface that interconnects dice in the stack, or a die that was originally disconnected from such an interface may be connected to the interface.

Abstract: A near-field RF communicator which is operable to perform a polling process to initiate communication with another near-field RF communicator in near-field range, wherein the near-field communicator is configured to perform a detection process, having a lower energy requirement than a polling process, to determine whether a near-field RF communicator is present in near-field range, and to perform the polling process in the event that the detection process indicates that a near-field RF communicator is present in near-field range.

Abstract: An integrated circuit includes a node coupled between a terminal of the integrated circuit and a transmitter circuit. The integrated circuit includes a switch circuit coupled between the node and a receiver circuit. The switch circuit includes a bias circuit coupled to the node. The bias circuit is configured to provide a first bias voltage to the node in response to an indication of a transmit mode of the terminal. The bias circuit is configured to provide a second bias voltage to the node in response to an indication of a receive mode of the terminal. The switch circuit may include a plurality of n-type devices coupled in series. Each of the plurality of n-type devices may include a triple-well, doubly-floating n-type device. The plurality of n-type devices may include a resistively-biased bulk terminal and a resistively-biased n-well.

Abstract: Disclosed here is a semiconductor integrated circuit device configured to suppress a voltage drop over the route for transmitting voltages from a power cut-off switch to a power cut-off region without lowering the degree of freedom in routing signal wires in that region. The semiconductor integrated circuit device includes a semiconductor chip in which the power cut-off switch and power cut-off region are provided. A reduction in the number of wiring channels in the power-cut off region is avoided by locating the power cut-off switch outside the power cut-off region. Over the substrate, a substrate-side feed line is formed to transmit a power-supply voltage from the semiconductor chip to outside thereof via the power cut-off switch, before introducing the voltage again into the chip to feed the power cut-off region, thus suppressing the voltage drop between the power cut-off switch and the power cut-off region.

Abstract: A voltage controlled oscillator (VCO) core for cancelling a supply noise is described. The VCO core includes an input node that receives the supply noise. The VCO core also includes a noise path coupled to the input node. The VCO core additionally includes a cancellation path coupled to the input node and the noise path. The cancellation path includes a programmable gain circuit coupled with a first terminal of a varactor. The supply noise passes through the programmable gain circuit to produce a cancellation noise.

Abstract: Methods and apparatus are disclosed for wirelessly communicating among integrated circuits and/or functional modules within the integrated circuits. A semiconductor device fabrication operation uses a predetermined sequence of photographic and/or chemical processing steps to form one or more functional modules onto a semiconductor substrate. The functional modules are coupled to an integrated waveguide that is formed onto the semiconductor substrate and/or attached thereto to form an integrated circuit. The functional modules communicate with each other as well as to other integrated circuits using a multiple access transmission scheme via the integrated waveguide. One or more integrated circuits may be coupled to an integrated circuit carrier to form Multichip Module. The Multichip Module may be coupled to a semiconductor package to form a packaged integrated circuit.

Abstract: This invention discloses a double Through Silicon Via (TSV) structure, including a first die unit, a first signal path, a second signal path, a receiving unit and a second die unit. The first and the second signal paths respectively include a driving unit and a TSV unit. Each driving unit includes a first end, a second end and a third end. The invention divides the signal paths of the conventional double TSV into two different signal paths by two driving units and the receiving unit having OR gate or NOR gate, to avoid generating the problem of signal degradation from the TSV unit with short defect. The invention further disposes a first switch unit, a second switch unit, a first exchange unit, a second exchange unit, a first VDD keeper and a second VDD keeper, to avoid generating the problems of open defect and leakage current.

Abstract: Presented systems and methods facilitate efficient reset operation. In one embodiment, a system comprises a core domain portion an I/O domain portion and a core reset I/O by-pass component. The core domain portion is configured to operate at a nominal core domain voltage level. The I/O domain portion configured to operate at a nominal I/O domain voltage level. The core reset I/O by-pass component configured to forward a reset indication to the core domain independent of the I/O domain. In one exemplary implementation the core reset I/O by-pass component is operable to receive an input reset indication at a high domain voltage level and to convert the input reset indication to a core reset signal that is less than or substantially equal to the nominal core domain voltage, wherein the high domain is voltage higher than the core domain voltage level.

Abstract: A monolithic integrated circuit (IC) chip containing a plurality of transistors, including: a substrate; a first transistor on the substrate; and a second transistor integrally formed on the substrate with the first transistor, the second transistor having a different structure than the first transistor, wherein the first transistor includes a first material system and the second transistor includes a second material system different from the first material system. The monolithic IC chip may further include a third transistor integrally formed on the substrate with the first and second transistors. The first transistor may include gallium nitride (GaN) and the second and third transistors may include silicon carbide (SiC).

Abstract: Described embodiments provide a delay cell for a complementary metal oxide semiconductor integrated circuit. The delay cell includes a delay stage to provide an output signal having a programmable delay through the delay cell. The delay cell has a selectable delay value from a plurality of delay values and a selectable output skew value from a plurality of output skew values, where the cell size and terminal layout of the delay cell are relatively uniform for the plurality of delay values and the plurality of output skew values. The delay stage includes M parallel-coupled inverter stages of stacked PMOS transistors and stacked NMOS transistors. The stacked transistors have configurable source-drain connections between a drain and a source of each transistor, wherein the selectable delay value corresponds to a configuration of the configurable source-drain connections to adjust a delay value of each of the M inverter stages and an output skew value of the delay cell.

Abstract: A monolithic integrated circuit (IC) chip containing a plurality of transistors, including: a substrate; a first transistor on the substrate; and a second transistor integrally formed on the substrate with the first transistor, the second transistor having a different structure than the first transistor, wherein the first transistor includes a first material system and the second transistor includes a second material system different from the first material system. The monolithic IC chip may further include a third transistor integrally formed on the substrate with the first and second transistors. The first transistor may include gallium nitride (GaN) and the second and third transistors may include silicon carbide (SiC).

Abstract: The present invention is directed to monolithic integrated circuits incorporating an oscillator element that are particularly suited for use in timing applications. The oscillator element includes a resonator element having a piezoelectric material disposed between a pair of electrodes. The oscillator element also includes an acoustic confinement structure that may be disposed on either side of the resonator element. The acoustic confinement element includes alternating sets of low and high acoustic impedance materials. A temperature compensation layer may be disposed between the piezoelectric material and at least one of the electrodes. The oscillator element is monolithically integrated with an integrated circuit element through an interconnection. The oscillator element and the integrated circuit element may be fabricated sequentially or concurrently.

Abstract: A vertical Hall sensor circuit includes an arrangement comprising a vertical Hall effect region of a first doping type, formed within a semiconductor substrate and having a stress dependency with respect to a Hall effect-related electrical characteristic. The vertical Hall sensor circuit further includes a stress compensation circuit which comprises at least one of a lateral resistor arrangement and a vertical resistor arrangement for generating a stress-dependent lateral resistor arrangement signal based on a reference signal provided to the stress compensation circuit, and for generating a stress-dependent vertical resistor arrangement signal based on the reference signal, respectively. The vertical Hall sensor circuit further includes a first circuit for providing a first signal to the arrangement based on at least one of the stress-dependent lateral resistor arrangement signal and the stress-dependent vertical resistor arrangement signal.

Abstract: A serial data transmission system, includes a transmitting terminal for transmitting a data, a receiving terminal for receiving the data transmitted by the transmitting terminal, a first connecting capacitor connected between the transmitting terminal and the receiving terminal, and a second connecting capacitor connected between the transmitting terminal and the receiving terminal, wherein the transmitting terminal comprises a transmitting terminal driver unit and an amplitude detection unit connected with the transmitting terminal driver unit, the transmitting terminal driver unit outputs a pair of differential signals, the amplitude detection unit detects an amplitude variation of the differential signals output by the transmitting terminal driver unit, and outputs an indication signal indicating whether the transmitting terminal and the receiving terminal are properly connected with each other. A serial data transmission method is further provided.

Abstract: Described herein is an integrated circuit which comprises: a first buffer, with positive trans-conductance, to drive a first signal with first phase; and a second buffer, with negative trans-conductance, to drive a second signal with second phase, wherein the first buffer and the second buffer are cross-coupled to one another.

Abstract: An integrated circuit (IC) includes a plurality of pads adapted to send or receive signals, and a plurality of mixed signal interface blocks, each of which is coupled to a corresponding pad in the plurality of pads. Furthermore, each mixed signal interface block in the plurality of mixed signal interface blocks is adapted to be configurable to provide selected functionality independently of the other mixed signal interface blocks.

Abstract: A switch control circuit has a first terminal, a second terminal, a third terminal, a serial-parallel converter, a selector, a driver circuit and a tri-state buffer. The serial-parallel converter converts a serial switching control signal inputted from the third terminal into first parallel switching control signals when the first terminal is at a first power-supply potential. The selector selects either the first parallel switching control signals converted by the serial-parallel converter or second parallel switching control signals inputted into the second and third terminals, depending on the potential of the first terminal. The driver circuit converts potential levels of the first parallel switching control signals or the second parallel switching control signals selected by the selector and generates parallel switching control signals with potential levels capable of switching a switch circuit.

Abstract: In accordance with an embodiment, a method of testing an integrated circuit, includes receiving a supply voltage on the integrated circuit via a first input pin, providing power to circuits disposed on the integrated circuit via the first input pin, comparing the supply voltage to an internally generated voltage, generating a digital output value based on the comparing, and applying the digital output value to a pin of the integrated circuit.

Abstract: A reconfigurable integrated circuit (IC) has IC interface terminals including circuit input terminals and circuit output terminals. A bypass controller and bypass circuitry are coupled to each other, and to at least one of the circuit input terminals and at least one of the circuit output terminals. A processing circuit has multiple circuit modules coupled to the bypass circuitry. The processing circuit is coupled to at least one of the circuit input terminals and at least one of the circuit output terminals. In operation the bypass controller controls the bypass circuitry to selectively couple at least one pair of the IC interface terminals together, the pair including one of the circuit input terminals and one of the circuit output terminals. When the pair of IC interface terminals are coupled together, at least one of the circuit modules is selectively de-coupled from the pair of the IC terminals.

Abstract: Certain semiconductor processes provide for the use of multiple different types of transistors with different threshold voltages in a single IC. It can be shown that in certain ones of these semiconductor processes, the speed at which high threshold transistors can operate at decreases with decreasing temperature. Thus, the overall processing speed of an IC that implements high threshold transistors is often limited by the lowest temperature at which the IC is designed (or guaranteed) to properly function. Embodiments of a system and method that overcome this deficiency by “pre-heating” the IC (or at least portions of the IC that implement the high threshold transistors) such that the IC can operate at a frequency (once pre-heated) higher than what would otherwise be possible for a given, minimum temperature at which the IC is designed (or guaranteed) to properly function at are provided.

Abstract: There is provided a clock distribution network for synchronizing global clock signals within a 3D chip stack having two or more strata. The clock distribution network includes a plurality of clock distribution circuits, each being arranged on a respective one of the two or more strata for providing the global clock signals to various chip locations. Each of the plurality of clock distribution circuits includes a resonant circuit for providing stratum-to-stratum coupling for the clock distribution network. The resonant circuit includes at least one capacitor and at least one inductor.

Abstract: A semiconductor device for battery control includes a CPU, a first bus coupled to the CPU, a second bus not coupled to the CPU, and a protective function circuit for protecting a battery from stress applied thereto. The semiconductor device also includes a non-volatile memory storing trimming data, a trimming circuit to perform trimming required to allow the protective function circuit to exert a protective function, and a bus control circuit capable of selectively coupling the first bus and the second bus to the non-volatile memory. The semiconductor device further includes a transfer logic circuit which causes, by making the bus control circuit select the second bus, a trimming data transfer path leading from the non-volatile memory to the trimming circuit to be formed and the trimming data stored in the non-volatile memory to be transferred to the trimming circuit without involving the CPU.