Abstract: Provided are methods and apparatus for enabling selective push processing during design and fabrication of an integrated circuit to improve performance of selected circuits of the integrated circuit. An exemplary method includes identifying a critical portion of an integrated circuit layout that defines a functional element having a critical operating frequency requirement and designing a subcircuit in the critical portion to enable performing a speed push process to increase performance of the subcircuit. The method can also include identifying at least one of a power supply node, a clock supply node, and an interface node at a boundary between the critical portion and a portion of the integrated circuit that is outside of the critical portion. The critical portion can be designed with a power domain that is independent of the portion of the integrated circuit that is outside of the critical portion.

Abstract: A semiconductor integrated circuit includes a plurality of semiconductor chips respectively selected in response to a plurality of chip selection signals, and a chip selection signal generator configured to generate the chip selection signals in response to one first control signal for deciding whether to drive the semiconductor chips and at least one second control signal for selecting at least one semiconductor chip from among the semiconductor chips.

Abstract: An integrated circuit power consumption calculating apparatus obtains power consumption of an integrated circuit by outputting circuit component transistor connection information of each of circuit components after setting a group of transistors connected via a source terminal/drain terminal of a transistor within each cell of an integrated circuit, by outputting circuit component logic model information after extracting a logic for each of the circuit components from the circuit component transistor connection information information, by obtaining power information (circuit component power information) of each signal transition state of an input/output terminal for each of the circuit components based on the circuit component transistor connection information information, by generating signal terminal transition information with a logic simulation performed for each of the circuit components of the integrated circuit, and by obtaining power consumption in a signal transition of an input/output terminal of ea

Abstract: An apparatus comprises at least one input connection, at least one output connection, and at least one control connection, and at least one switch circuit coupled to the input, the output, and the control connections. The switch circuit passes a signal received at the input to the output when the switch circuit is activated by a control signal received at the control connection. Power to the switch circuit is provided via the control connection.

Abstract: A delay circuit includes a MOSFET and bias voltage sources. The bias voltage sources apply a voltage difference between the drain and source of the MOSFET. The bias voltage source supplies a source voltage to a source electrode of the MOSFET. The bias voltage source supplies a drain voltage to a drain electrode of the MOSFET. An input signal to be delayed is propagated through the gate of the MOSFET in the gate width direction (y-axis direction).

Abstract: A data I/O interface for an integrated circuit device includes a noise detector receiving a power supply voltage, detecting a power supply voltage noise component, and providing a clock delay control signal in response to detected power supply voltage noise component. The data I/O interface also includes a clock delay circuit providing a delayed clock signal in response to the clock delay control signal, and a data transfer circuit powered by the power supply voltage and providing output data synchronously with the delayed clock signal.

Abstract: A gate drive circuit capable of operating at high speed and with low loss without erroneously operating the switching element is provided with a small number of components and a simple and easy circuit configuration. A primary side of a transformer is connected to an output terminal of a low-side gate drive circuit, and a secondary side of the transformer is connected to a gate input side of a high-side switching element. As a positive gate drive voltage is output from the low-side drive circuit, a negative voltage is applied between the gate and source of a high-side switching element, and a gate voltage is suppressed to be equal to or lower than a threshold value. Therefore, the high-side switching element maintains a turn-off state when the low-side switching element is turned on.

Abstract: Circuits and methods for power efficient generation of supply voltages and currents in an integrated circuit by reducing the power consumption of all core analog circuit blocks by a pulsed operation mode are disclosed. In a preferred embodiment of the invention the invention has been applied to a power management chip. Pulsed Mode of Operation of ALL core analog blocks—internal LDO/s, VREF an IBIAS generators, results in significantly reduced power consumption. New circuit realizations and control algorithms to improve the ON/OFF ratio of the Pulsed Mode Operation yield in better power efficiency. Innovative circuit implementation consisting of an additional Top Up Buffer Amplifier stage ensures a fast recharge of VREF output, thus allowing shorter ON times and respectively even better power efficiency. Bypassing a low bandwidth and slow to start LDO with a fast Bypass Comparator supplies a LDO rail in Pulsed Mode of operation.

Abstract: An integrated circuit includes a saw-tooth generator including a saw tooth node configured to have a saw-tooth voltage generated thereon; and a first switch having a first end connected to the saw tooth node. The integrated circuit further includes a second switch coupled between an output node and an electrical ground, wherein the first switch and the second switch are configured to operate synchronously. A first current source is connected to the saw tooth node. A second current source is connected to the output node.

Abstract: A high-frequency switch module that significantly reduces deterioration of high-frequency characteristics and improves harmonic wave distortion characteristics includes a high-frequency switch and SAW filters mounted on a multilayer substrate. Low pass filters are provided within the multilayer substrate. The terminals of the high-frequency switch are located on the bottom surface of the semiconductor substrate. The high-frequency switch includes a high-frequency circuit ground terminal and a control circuit ground terminal, the multilayer substrate includes therein a ground electrode which is electrically connected to a top surface connection electrode to which the high-frequency circuit ground terminal is connected, and a wiring electrode electrically connected to a top surface connection electrode to which the control circuit ground terminal is connected is arranged so as to be insulated from the ground electrode.

Abstract: An NFC device configured at least in part as an integrated circuit, the integrated circuit including a controller and a plurality of capacitors. The controller is operable to control one or more of the plurality of capacitors to vary an operating parameter of the NFC device.

Abstract: A PFC module includes: a diode bridge having first and second diodes in the upper arm, and third and fourth diodes in the lower arm; and first and second switching elements for power factor correction. The first and second diodes are Schottky barrier diodes formed by using a wide bandgap semiconductor. The third and fourth diodes, and the first and second switching elements are Schottky barrier diodes and switching elements respectively formed by using silicon.

Abstract: The present invention relates to the field of integrating electronic systems that operate at mm-wave and THz frequencies. A monolithic multichip package, a carrier structure for such a package as well as manufacturing methods for manufacturing such a package and such a carrier structure are proposed to obtain a package that fully shields different functions of the mm-wave/THz system. The package is poured into place by polymerizing photo sensitive monomers. It gradually grows around and above the MMICs (Monolithically Microwave Integrated Circuit) making connection to the MMICs but recessing the high frequency areas of the chip. The proposed approach leads to functional blocks that are electromagnetically completely shielded. These units can be combined and cascaded according to system needs.

Abstract: In one example, a chip includes integrated components configured to operate in the digital domain and the analog domain. An I/O pad located on the chip is configured to provide an external device access to the integrated components. A multifunction I/O interface cell between the I/O pad and the integrated components is configured to selectively connect different combinations of the components to the same I/O pad at different times. The multifunction I/O interface cell may include a first switching device connected to ground, a second switching device connected to a reference voltage, an analog input/output buffer, and a digital input/output buffer.

Abstract: A semiconductor device is disclosed. The structure includes: a first field-effect transistor (FET); and a second FET of similar polarity to the first FET, wherein a body of the first FET is electrically coupled to a body of the second FET, and a source of the first FET is electrically coupled to a source of the second FET, such that a body voltage of the second FET controls a body voltage of the first FET.

Abstract: An integrated circuit includes an input pad configured to receive a low-speed signal and a high-speed signal, a high-speed buffer coupled to the input pad, a low-speed buffer coupled to the input pad, a strobe input unit configured to receive a strobe signal for indicating an input of the high-speed signal to the input pad, and a buffer control unit configured to control an activation of the high-speed buffer in response to the strobe signal.

Abstract: A semiconductor device that can be manufactured with reduced costs and that includes a first connecting terminal, a second connecting terminal, a third connecting terminal, and a first circuit module configured to operate in response a first signal and a second signal. When a mode signal is in a first state, the first circuit module receives the first signal from the first connecting terminal and receives the second signal from the second connecting terminal. Otherwise, when the mode signal is in a second state, the first circuit module receives the first signal from the first connecting terminal and receives the second signal from the third connecting terminal. A memory module including at least one such memory device may also be provided.

Abstract: An example embodiment relates to a semiconductor device including a semiconductor package in which a semiconductor chip is mounted on the package substrate. The semiconductor package may include a temperature measurement device and a temperature control circuit. The temperature measurement device may measure a temperature of the semiconductor package. The temperature control circuit may change an operation speed of the semiconductor package on the basis of the temperature of the semiconductor package measured by the temperature measurement device.

Abstract: A semiconductor device includes a regulator including an operational amplifier configured of a current mirror and generating the second voltage V2 from a first voltage V1; and a control circuit that generates the current control signal OVDR, makes a current that is flowed by the current mirror increase by a first transition of the current control signal OVDR, and makes the current that is flowed by the current mirror decrease by a second transition of the current control signal OVDR. The control circuit includes a slew-rate processing unit that makes a second slew rate of the current control signal OVDR related to the second transition be smaller than a first slew rate of the current control signal OVDR related to the first transition.

Abstract: The innovation teaches methods how electronic circuits can power themselves by detecting and converting the energy of electric field lines provided from the surrounding environment. The harvesting of electric field energy by using means of capacitive coupling (contactless or (in-) direct contact) to field inducing power sources replaces or reduces the need of batteries e.g. for mobile devices, medical sensors, energy efficient circuits (e.g. stand-by) or (near field-) communication devices. A wide range of applications and technical solutions from smart labels, e-ink devices, shutter glasses, or electronic sensors up to electronic devices of any kind, can use the invention's means to power (integrated) circuits microcontrollers, light emitting items (LED) or any circuit where batteries or other power sources can be replaced by the innovation.

Abstract: Design apparatuses according to the present embodiments each include a CDFG generator, a scheduler, a binder, a retention register selector, a control circuit generator, and an RTL description generator. The binder generates a data path circuit in which a hardware element is allocated to a CDFG after scheduling by the scheduler. The retention register selector detects, as a retention control step, one of the control steps which has a minimum number of latch bits from the CDFG after scheduling and selects, as a retention register, a register allocated to the detected retention control step. The control circuit generator generates a control circuit which performs an execution control of the data path circuit and causes a state to transition to the retention control step when a signal for power-off is enabled.

Abstract: Various embodiments of a three-dimensional, stacked semiconductor integrated circuit are disclosed. In one exemplary embodiment, the circuit may include a master slice, a plurality of slave slices, and a plurality of through-silicon vias for connecting the master slice to the plurality of slave slices. At least one of the plurality of through-silicon vias may be configured to transmit an operation control signal from the master slice to the plurality of slave slices. The at least one of the plurality of through-silicon vias is configured to be shared by the plurality of slave slices.

Abstract: The invention relates to a voltage regulator circuit for providing voltage to an integrated circuit chip, comprising a reference voltage generator providing a reference voltage, a pFET header device having a plurality of pFET fingers, wherein each pFET finger in the plurality of pFET fingers is adapted for providing a different pFET output voltage to the integrated circuit chip, and a pFET control device for switching the plurality of pFET fingers depending on a comparison between the reference voltage and the pFET output voltage. The voltage regulator circuit allows for dynamically switching on or of the pFET fingers based on the output of the comparison of the reference voltage and the pFET output voltage, and thus allows for dynamically switching on or off, respectively, at least partly the integrated circuit chip.

Abstract: There is provided a semiconductor device having resistance elements small in temperature dependence of the resistance value. The semiconductor device has metal resistance element layers. The metal resistance element layer includes a resistance film layer. The other metal resistance element layer includes another metal resistance film layer. The metal resistance film layer is one of titanium nitride resistance and tantalum nitride resistance. The other metal resistance film layer is the other of the titanium nitride resistance and the tantalum nitride resistance. The resistance value of titanium nitride resistance has a positive temperature coefficient. Whereas, the resistance value of tantalum nitride resistance has a negative temperature coefficient. A contact plug electrically couples the metal resistance film layer with the other metal resistance film layer.

Abstract: According to one embodiment, a semiconductor integrated circuit device includes an output circuit which includes an inverter having a first transistor and a second transistor whose current paths are series-connected between a first power supply voltage and a second power supply voltage, a first diode circuit one end of which is connected to the first power supply voltage, and the other end of which is connected to a control terminal of the first transistor, and an adjustment circuit which forms a current path for discharging a charge of the control terminal of the first transistor to the second power supply voltage when an input clock is at a first level.

Abstract: According to one embodiment, a semiconductor integrated circuit includes a first circuit, a second circuit, and a signal propagation control circuit. The first circuit is configured to have a first power supply terminal. The second circuit is configured to have a second power supply terminal independent of the first power supply terminal. The signal propagation control circuit is configured to provide a first fixed value to the second circuit for a predetermined period after power is supplied to the second circuit, and after the predetermined period, configured to control whether to transfer an output signal from the first circuit to the second circuit or provide the first fixed value to the second circuit.

Abstract: A method and device for measuring integrated circuit power supply noise and calibration of power supply noise analysis models. The method includes collecting power supply noise monitor data from an integrated circuit having one or more power supply noise monitors connected between a power supply and respective scan cells of a scan chain and one or more functional circuits connected to the scan chain by scanning a power supply noise generation pattern into the scan chain and scanning a resultant pattern out of the scan chain; converting the resultant data into actual values of selected power supply parameters; generating simulated values of the selected power supply parameters using a power supply noise simulation model based on design data of the integrated chip; comparing the actual values of the selected power supply parameters to the simulated values of the selected power supply parameters; and modifying the power supply noise simulation model based on the comparing.

Abstract: An integrated circuit device includes an I/O circuit which buffers and outputs an input signal D from a pad when an enable signal ENB is set at a second voltage level, a circuit block to which an output signal from the I/O circuit is input, and a malfunction prevention circuit which outputs to the circuit block an output signal QP of which a voltage level is set by a first power supply VDDC in a period T1 in which the signal ENB is set at a first voltage level and a period T2 including a period in which the signal ENB changes from the first voltage level to the second voltage level, and outputs to the circuit block the output signal QP corresponding to an output signal QI from the I/O circuit in a period T3 in which the signal ENB is set at the second voltage level.

Abstract: An isolated epitaxial modulation device comprises a substrate; a barrier structure formed on the substrate; an isolated epitaxial region formed above the substrate and electrically isolated from the substrate by the barrier structure; a semiconductor device, the semiconductor device located in the isolated epitaxial region; and a modulation network formed on the substrate and electrically coupled to the semiconductor device. The device also comprises a bond pad and a ground pad. The isolated epitaxial region is electrically coupled to at least one of the bond pad and the ground pad. The semiconductor device and the epitaxial modulation network are configured to modulate an input voltage.

Abstract: A large-scale integrated circuit according to the present invention includes a plurality of functional blocks for independently performing a signal processing operation, and a selection controlling circuit for generating a first control signal to select one of the plurality of functional blocks, in which the selection controlling circuit includes a control signal generating circuit for generating a second control signal for stopping the operation of its circuit, and the selection controlling circuit generates the first and the second control signals by a command from a different control circuit.

Abstract: A coupler is presented that has high-directivity and low coupling coefficient variation. The coupler includes a first trace associated with a first port and a second port. The first port is configured substantially as an input port and the second port is configured substantially as an output port. The coupler further includes a second trace associated with a third port and a fourth port. The third port is configured substantially as a coupled port and the fourth port is configured substantially as an isolated port. In addition, the coupler includes a first capacitor configured to introduce a discontinuity to induce a mismatch in the coupler.

Abstract: A mobile telephone is provided that includes a plurality of circuit blocks and adapted to cut off the supply of power source voltage to any one of the circuit blocks. The mobile telephone also includes an interblock interface circuit provided on a signal path between an elected circuit block and a branch point at which the signal path branches into different branch paths so as to connect to other circuit blocks. The interblock interface circuit includes a signal gate for preventing signal transmission from the elected circuit block to the other circuit blocks, and includes a storage unit for storing a signal right before the power cut-off.

Abstract: A structure and method for reducing the effects of chip-package resonance in an integrated circuit assembly is described. A series RLC circuit is employed to reduce the output impedance of the power delivery system at the resonance frequency.

Abstract: A device (12) supplies energy to a rapid cycling and/or rapidly cycled integrated circuit (13, 52) which includes a circuit load (17) and an internal capacity (15) connected parallel to the circuit load (17). The integrated circuit (13, 52) has a high cycle frequency (f1) especially at least in the MHz range. A supply unit (14) especially designed as a current source is directly connected to the internal capacity (15). The supply unit (14) has an internal resistance, the impedance level of which is so high at the cycle frequency (f1) that a current (ID2) supplying the circuit load (17) originates to a greater degree from the internal capacity (15) than from the supply unit (14). At least one auxiliary load, current sink or load controller is provided as an integral component of the integrated circuit and is connected to the circuit load to smooth load fluctuations.

Abstract: The disclosed integrated circuit includes a first and a second power supply wirings, a flip-flop circuit, and a switch element. The first and the second power supply wirings are connected to the common power supplies. The flip-flop circuit is required to hold the stored data even when the voltage supply from the power supplies to the integrated circuit is stopped. The flip-flop circuit is connected to the first power supply wiring. The switch element is a transistor, for example, and switches whether or not the voltage is supplied from the power supplies. The switch element is provided on the second power supply wiring.

Abstract: A semiconductor device includes a power semiconductor array including a first power semiconductor located on one end of the power semiconductor array, a second power semiconductor located on the other end and a third power semiconductor located between the first and second power semiconductors and a diode array including a first diode located on one end of the diode array, a second diode located on the other end and a third diode located between the first and second diodes. A resistance value between an emitter electrode and a collector electrode in ON state is higher at the third power semiconductor than at the first and second power semiconductors. Upon application of a voltage of not less than a rising voltage, the third diode has a higher resistance value than resistance values of the first diode and the second diode upon application of a voltage not less than a rising voltage.

Abstract: A power combiner/divider having a waveguide, a plurality of amplifiers disposed on a supporting structure, a plurality of probes, each one having a first end electrically coupled to an output of a corresponding one of the plurality of amplifiers and a second end projecting outwardly from the supporting structure and into the waveguide. The probes are disposed in a common region of the waveguide. The region has a common electric field maximum within the waveguide. A first portion of the probes proximate the sidewalls have lengths different from a second portion of the probes disposed in a region distal from the sidewalls of the waveguide. The waveguide is supported by the support structure. The power combiner is a monolithic microwave integrated circuit structure.

Abstract: This document discusses, among other things, an apparatus and method for providing temperature information. In an example, an integrated circuit apparatus can include a first resistor configured to be coupled to a first terminal of a temperature-sensitive resistance, a second resistor configured to be coupled to a second terminal of the temperature-sensitive resistance, and a temperature information circuit configured to receive a first voltage from the first terminal of the temperature-sensitive resistance and a second voltage from the second terminal of the temperature-sensitive resistance. The temperature information circuit can provide the temperature information using the first and second voltages.

Abstract: In a particular embodiment, a method includes receiving a powered device (PD) detection signal at a PD from a powered network and applying the PD detection signal to an external resistor to provide a detection signature to the powered network. Further, the method includes receiving a PD classification mark signal at the PD, applying the received PD classification mark signal to the external resistor, and selectively activating a classification mark current path in parallel with the external resistor to produce a classification mark signature.

Abstract: A structure and method for reducing the effects of chip-package resonance in an integrated circuit assembly is described. A series RLC circuit is employed to reduce the output impedance of the power delivery system at the resonance frequency.

Abstract: A semiconductor device includes a first pad, a second pad and a third pad. The first pad and the third pad are electrically connected to each other. The first pad and the second pad are used for bonding. The second pad and the third pad are used for probing. According to this structure, Small size semiconductor device having high reliability even after a probing test can be provided.

Abstract: A method of supplying voltage to a die mounted on a packaging substrate includes mounting an active portion of a voltage regulator on the packaging substrate. The method also includes coupling the active portion of the voltage regulator to at least one passive component at least partially embedded in the packaging substrate and coupling the die to the at least one passive component. Mounting the active portion of the voltage regulator includes mounting the die on the packaging substrate where the die includes the active portion of the voltage regulator.

Abstract: According to one embodiment, a high frequency semiconductor device is provided, which includes: a distribution/input matching circuit board that mounts thereon a distribution/input matching circuit and an input transmission line pattern; an input capacitor board that is arranged adjacent to the distribution/input matching circuit board, and mounts a plurality of input capacitor cells thereon; a semiconductor board that is arranged adjacent to the input capacitor board, and mounts a plurality of field effect transistor cells thereon; an output capacitor board that is arranged adjacent to the semiconductor board, and mounts a plurality of output capacitor cells thereon; and a synthesis/output matching circuit board that is arranged adjacent to the output capacitor board, and mounts thereon an output transmission line pattern and a synthesis/output matching circuit, wherein the number of active field effect transistor cells is changed by connecting and disconnecting a plurality of field effect transistor cells t

Abstract: Configuring the operational behavior of an integrated circuit. The integrated circuit (IC) comprises a plurality of configuration inputs for configuring the IC. The IC also has a memory which stores a plurality of sets of parameter values. Each parameter value of the respective set corresponds to a different operational parameter of a plurality of operational parameters. The IC includes logic which determines a first plurality of configuration values corresponding to the first plurality of configuration inputs. The logic then selects a set of parameter values from the stored plurality of sets of parameter values. The selection of parameter values is based on the first plurality of configuration values. The IC is then configured for operation according to one or more operational parameter values in the selected set of parameter values.

Abstract: A novel capacitor for use in a charge pump circuit has a substrate with a planar surface. A first electrode is in a first plane spaced apart from the planar surface. A second electrode is adjacent to and is spaced apart from the first electrode in the first plane and is capacitively coupled thereto. A third electrode is in a second plane, spaced apart from the first plane and is capacitively coupled to the first electrode. A fourth electrode is adjacent to and spaced apart from the third electrode in the second plane and is capacitively coupled to the third electrode and capacitively coupled to the second electrode. The first and fourth electrodes are electrically connected together and the second and third electrodes are electrically connected together. In addition, a cylindrical shape electrode, and a great wall electrode, and charge pump capacitor-by-pattern-filling is disclosed.

Abstract: A minute capacitance element has a high accuracy capacitance and is resistant to external noises. The minute capacitance element includes: first and second metal electrodes having respective opposite facets facing each other formed on an insulator layer to define a first gap therebetween; and a shield electrode being connectable to an externally applied potential and formed on the insulator layer within the first gap to define a slit confining a synthetic capacitance.

Abstract: A package includes a first die and a second die. The dies are connected to each other through an interface. At least one of the first and second dies includes a plurality of signal sources, wherein each source has at least one quality of service parameter associated therewith, and a plurality of queues having a different priorities. A signal from a respective one of the signal sources is allocated to one of the plurality of queues in dependence on the at least one quality of service parameter associated with the respective signal source. The interface is configured such that signals from said queues are transported from one of said first and second dies to the other of said first and second dies.

Abstract: A semiconductor integrated circuit device provided with a first circuit block BLK1, a second circuit block DRV1 and a conversion circuit MIO1 for connecting the first circuit block to the second circuit block. The first circuit block includes a first mode for applying a supply voltage and a second mode for shutting off the supply voltage. The conversion circuit is provided with a function for maintaining the potential of an input node of the second circuit block at an operation potential, thereby suppressing a penetrating current flow when the first circuit block is in the second mode. The conversion circuit (MIO1 to MIO4) are commonly used for connecting circuit blocks.

Abstract: A package includes a first die and a second die, at least one of said first and second dies being a memory. The dies are connected to each other through an interface. The interface is configured to transport both control signals and memory transactions. A sampling circuit samples the control signals before transport on the interface. The sampling circuit is controlled in dependence on at least one quality of service parameter associated with a respective control signal.

Abstract: A semiconductor apparatus having a plurality of semiconductor chips is configured in such a manner that the plurality of semiconductor chips share one or more source voltages generated in one of the plurality of semiconductor chips.