Abstract: Apparatus, systems, devices and methods for providing an orthogonal frequency coding technique for surface acoustic wave sensors incorporating the use of multiple parallel acoustic tracks to provide increased coding by phase shifting and delaying a code sequence. The surface acoustic wave sensor includes parallel tracks with multiple reflectors with differing delay offsets to form a complex code sequence. The reflectors may be uniform, but alternatively could include fingers withdrawn, have reflector position modulation, differing frequencies or be spatially weighted.

Abstract: An integrated package provides contactless communication through a coupling mechanism embedded in the package. Package types include Surface Mount Technology (SMT), Low Temperature Co-fired Ceramic (LTCC) technology, and dual-in-line integrated circuit pressed ceramic packages generally. The package can include an acoustic wave device (AWD) sensor such as a surface acoustic wave (SAW) device or a bulk acoustic wave (BAW) device. Coupling includes inductive and capacitive effects through plates, loops, spirals, and coils. Coil inductance and SAW capacitance can be parallel resonant at the desired SAW resonance with the coil impedance higher than the SAW impedance, minimizing load-pull effects.

Abstract: A multi-channel surface acoustic wave (SAW) filter includes a voltage controlled velocity tunable piezoelectric substrate, an input transducer fabricated on the substrate, and an output transducer fabricated on the substrate. The input transducer further includes multiple input sub-transducers that are electrically and physically connected in parallel. The output transducer further includes multiple output sub-transducers that are electrically and physically connected in parallel. Corresponding pairs of input sub-transducers and output sub-transducers form multiple parallel channels for SAW propagation. The input transducer produces a voltage controlled tunable COMB frequency response that is combined with a voltage controlled tunable COMB frequency response produced by the output transducer to produce a SAW filter voltage controlled tunable frequency response.

Abstract: An electrical component with a filter circuit is specified that includes a first bandstop filter and a second bandstop filter. The first bandstop filter includes at least one resonator operating with acoustic waves and has a first stop band. The second bandstop filter includes LC elements and has a second stop band that lies at least one octave higher than the first stop band.

Abstract: Some embodiments of the invention provide a filter having at least one first filter, each first filter being a band-reject type filter having a first set of filter parameters that are a function of a first material used to fabricate the at least one first filter, and at least one second filter, each second filter having a second set of filter parameters that are a function of a second material used to fabricate the at least one second filter, each second filter being one of a band-reject type filter and a band pass type filter. The at least one first filter and the at least one second filter are then cascaded together to form the filter. The first material and the second material are different materials. The cascaded filter has a new third set of filter parameters that are a function of both the first material and the second material. Other embodiments of the invention include a method for fabricating the filter and a method of filtering using such a cascaded filter.

Abstract: A boundary acoustic wave device includes a piezoelectric substrate having an upper surface in which grooves are provided, IDT electrodes which are at least partially embedded in the grooves in the upper surface of the piezoelectric substrate in a thickness direction of the IDT electrodes, and first and second dielectric layers stacked on the upper surface of the piezoelectric substrate. The second dielectric layer has an acoustic velocity greater than that of the first dielectric layer.

Abstract: To provide a communication apparatus and a SAW device wherein the steepness in the vicinity of the outside of the lower frequencies of a passband can be improved. On a piezoelectric board 100, a SAW element 11 is formed which has first to fifth IDT electrodes 1-5 and reflector electrodes 6,7 with first to fourth electrode-finger narrow-pitch portions N1-N4 being formed in the respective ones of adjoining portions of the respective first to fifth IDT electrodes 1-5. An unbalanced signal terminal 8 and balanced signal terminals 9,10 are connected to the SAW element 11.

Abstract: A longitudinally coupled resonator boundary acoustic wave filter device includes a piezoelectric substrate made of LiNbO3 having a principal plane obtained by rotating the Y-axis through about 15 degrees +?10 degrees, a dielectric substrate made of silicon oxide and laminated on the piezoelectric substrate, and an electrode structure arranged at a boundary between the piezoelectric substrate and the dielectric substrate. The electrode structure includes a plurality of IDTs arranged in a direction in which a boundary acoustic wave propagates, and reflectors, wherein where in each of the plurality of IDTs, the overlap width of electrode fingers is W and the interval of electrode fingers is P, W/P is in a range of about 20 to about 45.

Abstract: An acoustic wave filter device having a balanced-to-unbalanced conversion function, in which the signal balance between a pair of balanced terminals is improved, has, on a piezoelectric substrate, one end of at least one longitudinally coupled resonator type acoustic wave filter and one end of at least one second longitudinally coupled resonator type acoustic wave filter among the rest of acoustic wave filters are commonly connected and connected to an unbalanced terminal, and the other ends of the longitudinally coupled resonator type acoustic wave filters are electrically connected to first and second balanced terminals, respectively, and in which a propagation direction of an acoustic wave in the longitudinally coupled resonator type acoustic wave filter and a propagation direction of an acoustic wave in the second longitudinally coupled resonator type acoustic filter are different from each other.

Abstract: An acoustic wave duplexer has a satisfactory isolation characteristic between a reception acoustic wave filter chip and a transmission acoustic wave filter chip, and includes a reception surface acoustic wave filter chip and a transmission surface acoustic wave filter chip mounted on a substrate. The substrate includes first and second balanced terminals and a common terminal. At least one of the transmission surface acoustic wave filter chip and the reception surface acoustic wave filter chip is a balanced filter unit that includes, as an input terminal or an output terminal, a first balanced signal terminal and a second balanced signal terminal. The acoustic wave duplexer further includes a first interconnection arranged to connect the balanced filter unit and the first balanced terminal and a second interconnection arranged to connect the balanced filter unit and the second balanced terminal. The first and second interconnections intersect with each other while being insulated from each other.

Abstract: In an antenna duplexer including a high band side filter, a low band side filter, and a phase shifter in a low pass configuration inserted between the high band side filter and an antenna port and taking phase matching of both filters, a resonance inductor resonating with a capacitor on the antenna port side is provided to obtain a attenuation characteristic in an optional band in an out-of-pass band of both filters by the resonance. For instance, the maximum attenuation is held at twice of the center frequency fL of a pass band of the low band side filter. The LC resonance circuit configuration can be desirably modified into a configuration such that a resonance capacitor is provided to an inductor in a phase shifter having a high band side filter configuration.

Abstract: A surface acoustic wave device includes a supporting substrate, a LiTaO3 piezoelectric substrate joined on the supporting substrate, which has a normal line direction on a main surface thereof in a direction rotated 43° to 53° from a Y axis to a Z axis direction about an X axis, and an electrode pattern formed on the piezoelectric substrate.

Abstract: A band pass filter includes partial filters, each of which has a pass band. Pass bands of different ones of the partial filters have center frequencies that are different. A partial filter with a lowest center frequency has a pass band with a first low-frequency edge and a first high-frequency edge. The first low-frequency edge is steeper than first high-frequency edge. A partial filter with a highest center frequency has a pass band with a second low-frequency edge and a second high-frequency edge. The second high-frequency edge is steeper than the second low-frequency edge.

Abstract: Apparatus and method for providing high density component assemblies, such as electromechanical or electro-optical assemblies.

Abstract: A component working with guided bulk acoustic waves is disclosed with at least one substrate and a layer system that is connected to this substrate and suitable for wave propagation. The layer system includes a metallization layer, a first dielectric layer, and a second dielectric layer. The velocity of the acoustic wave is greater in the second dielectric layer than in the first dielectric layer. At least one of the dielectric layers contains TeO2.

Abstract: A filter includes a first filter that is connected between an input node and an output node and is a surface acoustic wave filter, and a second filter that is provided between the input node and the output node and is connected in parallel with the first filter. The first filter has a total number N1 of pairs of electrode fingers of interdigital transducers and the second filter having a total number N2 of pairs of electrode fingers of interdigital transducers, in which N1 is greater than N2.

Abstract: A contactless SAW based torque and temperature sensor includes three SAW resonators 2, 3, 4 mounted on a common substrate 1 made of Y+34° cut of quartz. The first SAW 2 has its principle axis inclined at +45° to the X-axis of the substrate, which, in use, is either aligned with the longitudinal axis of a device whose torque is to be measured or is perpendicular thereto, and the second SAW 3 has its principle axis inclined at 135 degrees to the X-axis of the substrate. The third SAW 4 is positioned with its principle axis inclined at an angle, preferably in the range of 0 to 30 degrees, to the principle axis of both the first 2 and second 3 resonators so that none of the SAWs are parallel, the third SAW 4 enabling temperature measurements to be taken.

Abstract: A radio filter has a band pass filter for passing a desired band of signal frequencies and a band stop filter for reducing the passing of a band of undesired signal frequencies. The filter comprises an input terminal, an output terminal, and a filter having a multiple of transmission lines arranged between said input and output terminal which filters input signals through said input terminal to pass signals of a given frequency band. A ground is connected to said transmission lines at first ends of said multiple of transmission lines and acoustic impedance elements are connected between said ground layer and second ends of said multiple transmission lines for providing a stop band filter function of the input signals, and whereby the input signal after band pass filtering and stop band filtering is provided at said output terminal.

Abstract: A surface acoustic wave device is disclosed. The surface acoustic wave device includes: a substrate having a plane surface; multiple first electrodes formed on the plane surface of the substrate; and multiple second electrodes formed on the plane surface of the substrate. Each of the first and second electrodes has a predetermined closed ring shape. The first and second electrodes are concentric. The second electrodes are located radially inside or radially outside of the first electrodes.

Abstract: A surface acoustic wave device includes a piezoelectric substrate, at least one interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and an insulator layer to improve a temperature characteristic arranged so as to cover the IDT electrode. When a surface of the insulator layer is classified into a first surface region under which the IDT electrode is positioned and a second surface region under which no IDT electrode is positioned, the surface of the insulator layer in at least one portion of the second surface region is higher than the surface of the insulator layer from the piezoelectric substrate in at least one portion of the first surface region by at least about 0.001?, where the wavelength of an acoustic wave is ?.

Abstract: An SAW device includes: a piezoelectric substrate 1; a first and a second SAW elements 2, 3 having three or more odd-number IDT electrodes 4-9 and reflector electrodes 10-13 arranged on the piezoelectric substrate 1; lines 16 which cascade-connect the first and the second SAW elements 2, 3; a first unbalanced signal terminal 14 connected to the IDT electrodes 4, 6 arranged at the both ends of the first SAW elements 2; and a second unbalanced signal terminal 15 connected to the IDT electrodes 7, 9 arranged at the both ends of the second SAW element 3. In each of the first and the second SAW elements 2, 3, one bus bar electrode 17 of each of center IDT electrodes 5, 8 is split into two, and non-split bus bar electrodes 18, 19 of at least one center IDT electrode of the first and the second SAW elements 2, 3 are connected to a reference potential electrode and the lines 16 are made to be balanced signal lines.

Abstract: An acoustic wave device includes a piezoelectric substrate, interdigital electrodes arranged on the piezoelectric substrate, a first dielectric element arranged between the interdigital electrodes, a second dielectric element that covers the interdigital electrodes and the first dielectric element, and an adjustment element that has been formed on the first dielectric element. The adjustment element has been formed from a material whose specific gravity is greater than that of the first dielectric element and that of the second dielectric element.

Abstract: A surface acoustic wave device comprises a surface acoustic wave element, including: a piezoelectric substrate, a first interdigital transducer unit having a first interdigital transducer and a second interdigital transducer formed on the piezoelectric substrate, and a second interdigital transducer unit having a third interdigital transducer and a fourth interdigital transducer formed on the piezoelectric substrate; a first terminal electrically coupled to the first interdigital transducer; a second terminal electrically coupled to the second interdigital transducer; a first variable resistor electrically coupling the first terminal to the third interdigital transducer; a second variable resistor electrically coupling the first terminal to the fourth interdigital transducer; a third variable resistor electrically coupling the second terminal to the third interdigital transducer; and a fourth variable resistor electrically coupling the second terminal to the fourth interdigital transducer.

Abstract: An antenna sharing device has a common signal terminal pair, a first terminal pair, a second terminal pair, a first filter, a second filter, a first inductor element, second inductor elements, third inductor elements. The second and third inductor elements have a plurality of inductor elements, respectively. An inductor element closest to the first terminal pair among the inductor elements included in the second inductor elements and an inductor element closest to the second terminal pair among the third inductor elements are arranged further away from the first inductor element than the other inductor elements included in the second and third inductor elements, or formed on a substrate different from a substrate on which the first inductor element is formed, or formed opposite to the first inductor element by sandwiching a shielding pattern.

Abstract: Band reject filters are disclosed. A band reject filter includes a first acoustic resonator and a second acoustic resonator, each of which has either shunt resonators adapted to resonate substantially at respective resonance frequencies defining a rejection frequency band or series resonators adapted to anti-resonate substantially at respective anti-resonance frequencies defining the rejection frequency band. These resonators are connected through a phase shifter which imparts an impedance phase shift of approximately 45° to 135°. Exemplary applications of the band reject filters disclosed herein include implementation as an inter-stage band reject filter for a base station power amplifier for a wireless communication system, as a radio frequency band reject filter in a duplexer for a wireless communication terminal, and in a low noise amplifier input stage.

Abstract: An elastic wave filter of a resonator type includes at least one IDT electrode arranged so as to contact the piezoelectric substance. The elastic wave filter is arranged such that an elastic wave in a main propagation mode for obtaining target frequency characteristics and an elastic wave in a sub-propagation mode propagate, the elastic wave being capable of propagating simultaneously with the elastic wave in the main propagation mode, an electromechanical coefficient K2 of the elastic wave in the sub-propagation mode is in the range from about 0.1% to about one third of an electromechanical coefficient K2 of the elastic wave in the main propagation mode, and a sound velocity of the elastic wave in the sub-propagation mode differs from a sound velocity of the elastic wave in the main propagation mode.

Abstract: In a high frequency device, resonators (IDT capacitors) that function as capacitors are included in a lumped constant balun included in a filter or duplexer, and furthermore, the resonance frequency of the IDT capacitors is set higher than the passband frequency of the filter. This improves the capacitor Q value, thus enabling the realization of a low-loss balance filter.

Abstract: A first acoustic wave device includes a second acoustic wave device. The second acoustic wave device includes a substrate made of a piezoelectric material, a pair of interdigital electrodes formed on the substrate, each of the intergidital electrodes including a plurality of electrode fingers, and a adjustment medium. The adjustment medium includes at least a single layer and is formed on at least a part of the pair of the intergidital electrodes. The adjustment medium further includes a thick portion and a thin portion being null or thinner than the thick portion, an area of the thick portion opposed to a region being determined according to a predetermined characteristic value, the area including the intergital electrodes and a plurality of spaces between the electrode fingers adjacent each other.

Abstract: A composite substrate 10 includes: a piezoelectric substrate 12 capable of transmitting an elastic wave and composed of lithium tantalate (LT); a silicon support substrate 14 that is bonded to the rear surface of the piezoelectric substrate in the (111) plane; and an adhesive layer 16 bonding the substrates 12 and 14 to each other.

Abstract: A film bulk acoustic resonator includes a substrate; an acoustic reflector portion formed on the substrate; and an acoustic resonator portion including a lower electrode, a piezoelectric film, and an upper electrode which are sequentially stacked on the acoustic reflector portion, An uppermost layer of the acoustic reflector portion which is in contact with the acoustic resonator portion has a root-mean-square roughness of approximately 1 nm or less.

Abstract: An elastic wave filter includes two longitudinally coupled resonator type elastic wave filter elements that are cascade connected with each other, each longitudinally coupled resonator type elastic wave filter element including three IDTs (interdigital transducers) arranged on a piezoelectric substrate in a transmitting direction of an elastic wave. In at least one of the longitudinally coupled resonator type elastic wave filter elements, electrode fingers of the IDTs that are cascade connected are arranged at a pitch that is smaller than a pitch of electrode fingers of the remaining IDT. The adverse effect of a parasitic capacitance in cascade connected wires disposed between the longitudinally coupled resonator type elastic wave filter elements is reduced so as to improve impedance matching of a cascade connected portion and to improve the VSWR characteristics of input-output terminals of the elastic wave filter.

Abstract: An intelligent packaging system utilizing acoustic wave devices includes an electronic module, a SAW ID, various passive SAW sensors and a printed antenna. The passive SAW sensors include a SAW pressure sensor, a SAW temperature sensor and one or more SAW chemical sensors for monitoring physical parameters of a package content. The electronic module generally includes a printed large area distributed electrical circuit, an impedance transformer and a SAW transponder for realizing passive wireless monitoring of the structural integrity of the package. A separate power harvesting antenna and/or a separate dual band antenna can generate radio frequency (RF) power for biasing components associated with the electronic module.

Abstract: An apparatus in one example comprises an insulating piezoelectric layer, a base electrode along a first side of the insulating piezoelectric layer, and at least one gradient electrode along a second side of the insulating piezoelectric layer. The at least one gradient electrode is configured to provide a voltage gradient across an aperture of a surface acoustic wave (SAW) filter. The base electrode and the at least one gradient electrode are configured to provide a voltage bias across the insulating piezoelectric layer. The voltage bias comprises a gradient based on the voltage gradient across the aperture of the SAW filter. The base electrode and the at least one gradient electrode are configured to control at least one frequency characteristic of the SAW filter based on the voltage bias across the insulating piezoelectric layer.

Abstract: A duplexer includes an antenna terminal, a first filter connected to the antenna terminal, a second filter that has a passband at a high-frequency side of the first filter and is connected to the antenna terminal, and a resonance circuit that is connected between the second filter and the antenna terminal and includes a first inductor and a first capacitor connected in parallel. Assuming that a passband frequency of the first filter ranges from f1Low to f1High (f1Low˜f1High) and a passband frequency ranges from f2Low to f2High (f2Low˜f2High), the resonator has a resonance frequency fr satisfying: fr=(f2Low˜f2High)±(f1Low˜f1High), or fr=2(f1Low˜f1High)±(f2Low˜f2High).

Abstract: Programmable SAW filter module are provided to overcome undesirable drawbacks, limitations and shortcomings associated with “in-line” SAW filters, such as insertion loss, propagation loss and strong signal capture effects. The programmable SAW filter modules remove the SAW structure from the primary signal path, adding signal gain to drive the splitter and using the SAW portion of the circuit as a programmable impedance element. The programmable SAW filter module includes an amplifier, an impedance, a surface acoustic wave propagation element, a splitter, input and output IDT electrodes, input and output interdigitated transducers, means for gain control and a combiner to combine or sum the signals received from the output IDT electrodes and form an output signal. The input and output IDT's are fully integrated circuits comprising the power splitter and power combiner functions, the phase shift, and gain functions.

Abstract: A surface acoustic wave device includes a substrate including lithium niobate; a IDT being provided on an upper surface of the substrate and including a plurality of electrode fingers; and a protective film covering the IDT and having an uneven shape on an upper surface thereof. When a pitch width of one pitch of the IDT is p, a width of one of the electrode fingers is p1, a width between the electrode fingers is p2, and a thickness of the IDT is h, following relations are satisfied, p1+p2=p, and h/(2×p)?4.5%. With this configuration, an appropriate reflection characteristic is realized, and the surface acoustic wave device having excellent temperature coefficient of frequency and electrical characteristic can be obtained.

Abstract: An IDT produces a SAW when excited by a single electrical pulse and can be fabricated to embody a code, which code provides for a passive autocorrelation of a SAW input to the IDT and thereby lends itself to further application as a signal generator in a communication device. However, internal dimensions of IDTs are inversely proportional to operating frequency, such that high frequency IDTs present significant manufacturing difficulties. Fabrication of IDTs for high frequency applications is simplified by exploiting a harmonic frequency SAW generated by IDTs. An IDT may therefore be designed according to fundamental frequency internal dimension criteria but can operate at a multiple of the fundamental frequency, thereby providing much higher frequency operation than conventional SAW systems. Operation of a second harmonic SAW system at 2.4 GHz based on a fundamental frequency of 1.2 GHz is contemplated.

Abstract: An acoustic wave device includes first and second 3-IDT acoustic wave filters provided on a piezoelectric substrate. A second IDT in the first acoustic wave filter is electrically connected to a second IDT in the second acoustic wave filter and a third IDT in the first acoustic wave filter is electrically connected to a third IDT in the second acoustic wave filter to cascade the first acoustic wave filter with the second acoustic wave filter. An acoustic wave resonator is connected to a first IDT in the first acoustic wave filter. In the acoustic wave device, NA/NB is in a range from about 2.6 to about 3.5 and fB/fa is in a range from about 0.995 to about 1.010.

Abstract: A filter includes a parallel resonator having first comb electrodes provided on a piezoelectric substrate and a first dielectric film that covers the first comb electrodes, and a series resonator having second comb electrodes provided on the piezoelectric substrate and a second dielectric film covers the second comb electrodes and is made of a material identical to that of the first dielectric film. The first dielectric film has a different thickness from that of the second dielectric film.

Abstract: An electrical circuit that includes an electric four-terminal network is disclosed. The electric four-terminal network includes a first electrical port with a first terminal and a second terminal and a second electrical port with a first terminal and a second terminal. The electrical circuit also includes a first shunt branch between the second terminal of first electrical port and ground.

Abstract: A duplexer includes a piezoelectric substrate, a transmitting filter, and a receiving filter. A transmitting filter includes a ladder filter having a first resonator group which has one or more resonators in one or more series arms and one or more resonators in one or more parallel arms. A receiving filter has a passband higher than that of the transmitting filter, and includes a second resonator group which has one or more resonators in one or more series arms and one or more resonators in one or more parallel arms. A node connects both the transmitting filter and the receiving filter. The receive-side closest resonator closest to the node in the parallel arm is closer to the node than a resonator which is closest to the node in the series arm, and a resonance frequency of the receive-side closest resonator is lower than the passband of the transmitting filter.

Abstract: There is provided a filter including a first resonator, a second resonator in which an excitation efficiency is reduced more than the first resonator, and an inductor connected in parallel with the second resonator.

Abstract: A transversal filter operates using surface acoustic waves and has a piezoelectric substrate and an acoustic track that is arranged on the substrate and in which a first transducer and a second transducer are arranged. Each transducer has electrode fingers. A function, which characterizes the weighting of the overlap length of electrode fingers of different polarity in the second transducer, has a half main lobe and at least one side lobe. The amplitude of the lobes decreases monotonally in a direction that points to the first transducer.

Abstract: According to some embodiments, a pre-poled, single-domain body of a ferroelectric crystalline material such as lithium tantalate or lithium niobate is electrically reduced by applying a voltage across the body in a non-oxidizing environment while the body is heated to a process temperature below its Curie temperature. The voltage generates an electric field along the polar axis of the body. Electrodes may be formed on the body surface by applying an acetate-based silver paint. Exemplary methods allow achieving electrical conductivity values of 10?11 to 10?9 Siemens/cm.

Abstract: A proposed spread spectrum signal receiver includes a radio front-end unit and a processing unit. The radio front-end unit, in turn, has an antenna, a digitizing circuit and a primary buffer unit. The antenna is adapted to receive radio signals (SHF) from a plurality of signal sources, and the digitizing circuit is adapted to downconvert and filter the received signals (SHF), and generate sample values (SBP-D) thereof. The primary buffer unit is adapted to temporarily store the sample values (SBP-D) from the digitizing circuit and allow the processing unit to read out a first set of stored sample values (SBP-D) contemporaneously with the storing of a second set of sample values (SBP-D) in the primary buffer unit. The processing unit is adapted to receive the sample values (SBP-D) from the primary buffer unit, and based thereon, produce position/time related data (DPT).

Abstract: A method of manufacturing an acoustic wave device includes: forming a conductive pattern on a wafer made of a piezoelectric substrate having an acoustic wave element, the conductive pattern including a first conductive pattern being continuously formed on a cutting region for individuating the wafer, a second conductive pattern being formed on an electrode region where a plated electrode is to be formed and being connected to the acoustic wave element and a third conductive pattern connecting the first conductive pattern and the second pattern; forming an insulating layer on the wafer so as to have an opening on the second conductive pattern; forming the plated electrode on the second conductive pattern by providing an electrical current to the second conductive pattern via the first conductive pattern and the third conductive pattern; and cutting off and individuating the wafer along the cutting region.

Abstract: A surface acoustic wave device includes a base portion that surrounds a surface acoustic wave element and is made of a resin, and a cap portion that is adhered onto the base portion so that a cavity sealing the surface acoustic wave element is formed, and is made of a resin. At least one of an adhering face of the base portion and an adhering face of the cap portion adhering the base portion and the cap portion is subjected to a grain finish or a dull finish. A convex portion is provided inside of the adhering face that is of one of the base portion and the cap portion adhered to the other.

Abstract: In an elastic wave device including an input side electrode and an output side electrode being a resonant single-phase unidirectional transducers (RSPUDT) provided with respective pairs of bus bars opposing to each other on a piezoelectric substrate and a number of excitation electrode fingers extending in a comb-teeth shape so as to respectively cross each other from the respective bus bars, the elastic waves are repeatedly reflected and amplified between the central part of the input side electrode and the central part of the output side electrode along the direction of extension of the respective bus bars by the excitation electrode fingers of the input side electrode and the output side excitation electrode, the elastic wave device includes a damper at least on either one of the input side bus bar or the output side bus bar in an area between the central part of the input side electrode in the direction of movement of the elastic waves and the central part of the output side electrode in the direction of

Abstract: A surface acoustic wave device has a duty that is greater than about 0.5, attenuation outside the pass band is increased, and an undesirable spurious response is effectively suppressed. The surface acoustic wave device includes an LiNbO3 substrate having Euler angles (0°±5°, ?±5°, 0°±10°), an electrode that is provided on the LiNbO3 substrate and that includes an IDT electrode primarily made of Cu, a first silicon oxide film that is provided in an area other than an area in which the electrode is arranged so as to have a thickness substantially equal to that of the electrode, and a second silicon oxide film that is arranged so as to cover the electrode and the first silicon oxide film, wherein the surface acoustic wave device utilizes an SH wave, wherein a duty D of the IDT electrode 3 is at least about 0.52, and ? of the Euler angles (0°±5, ?+5°, 0°±10°) is set so as to fall within a range that satisfies the following Inequality (1A) or (1B): (1) When 0.52?D?0.6, ?10×D+92.5?100×C???37.5×D2?57.75×D+104.

Abstract: A surface acoustic wave device includes: a quartz substrate; and at least a single-type IDT electrode provided on a surface of the quartz substrate for exciting a Rayleigh surface acoustic wave in the upper limit mode of the surface acoustic wave stop band with the following relationships satisfied; ?=0°, 110°???140°, and 38°?|?|?44°, when the quartz substrate cut angles and the surface acoustic wave propagation direction are represented by Euler angles (?, ?, ?), and wherein the electrode thickness relative to wavelength set such that H/??0.1796?3?0.4303?2+0.2071?+0.0682, with the thickness of the IDT electrode defined as H, the width of an electrode IDT finger defined as d, the pitch between the electrode fingers of the IDT electrode as P, the wavelength of the surface acoustic wave as ?, and where ?=d/P.