Abstract: When a signal is read from a CCD solid-state image pickup element, the CCD solid-state image pickup element is driven with at least two driving voltages so that high-speed reading is performed with generation of noise due to interference between the driving voltages reduced. The CCD solid-state image includes a charge storage section between a vertical transfer register and a horizontal transfer register. By performing the transfer of charge in the direction of columns during an effective transfer period of the transfer in the direction of rows, signal charge of one row generated by a light receiving sensor is transferred to the charge storage section, and by performing the transfer outside the effective transfer period in the transfer in the direction of the row, the signal charge of one row transferred to the charge storage section is transferred to the horizontal transfer register.

Abstract: The invention relates to an image sensor for cameras which includes a plurality of pixels arranged in lines and columns. The pixels each include a light-sensitive detector element to generate electrical charge from incident light, a transfer gate, a readout node which is charge-coupled to the detector element via the transfer gate, a converter circuit to generate a measurement signal which is proportional to a charge present in the readout node, and a reset device to reset a charge present in the readout node to a reference value. The image sensor furthermore includes a control device for the control of the transfer gate and of the of the reset device of the respective pixel. The control device is configured such that the charge generated during a single exposure procedure in the respective detector element is transferred from the detector element to the readout node in a plurality of portions. The invention furthermore relates to a method for the reading out of an image sensor.

Abstract: A pixel for detecting incident radiation (In) over a large area with high sensitivity and low power consumption. The pixel comprises a semiconductor substrate (1), covered by a thin insulating layer (2), on top of which a dendritic or arborescent gate structure (3) is arranged. The dendritic gate (3) is electrically connected at two or more contacts (C1, C2) with voltage sources, leading to the flow of a current and a position-dependent potential distribution in the gate (3). Due to the use of arborescent structures and various materials (31, 32), the pixel can be optimized for a certain application, in particular in terms of the electric field distribution, the RC time constant, the power consumption and the spectral sensitivity. Due to its compact size, the photo sensor can be arranged in linear or two-dimensional manner for the realization of line and area sensors.

Abstract: An image sensor for capturing a color image is disclosed having a two-dimensional array having first and second groups of pixels wherein pixels from the first group of pixels have narrower spectral photoresponses than pixels from the second group of pixels and wherein the first group of pixels has individual pixels that have spectral photoresponses that correspond to a set of at least two colors, with the placement of the first and second groups of pixels defining a pattern that has a minimal repeating unit including at least six pixels with at least some rows or columns of the minimal repeating unit composed only of pixels from the second group of pixels, and including ways to combine similarly positioned pixels from at least two adjacent minimal repeating units.

Abstract: A charge-coupled device image sensor includes (a) a two-dimensional array of pixels having a plurality of rows and columns, the two-dimensional array includes: (i) a plurality of gates arranged as a charge-coupled device; wherein the array further includes a plurality of charge-coupled devices that are arranged to be clocked by one or more common timing signals; (ii) a transition region, electrically connected to the array, having a first and second row of gates in which the second row is electrically mated into a plurality of first and second pairs of gates in which first pairs of gates are clocked by a first common timing signal and second pairs of gates are clocked by a second common timing signal; wherein the first row of gates are all clocked with a third common timing signal; and (b) a horizontal shift register adjacent the second row of gates for receiving charge from the second row of gates.

Abstract: To prevent such a situation that a signal from a pixel in a dark state is output at a level shifted from an originally set level to deteriorate an image quality, and to improve the image quality.

Abstract: An imaging system for use in an bar code reader for imaging a target bar code. The imaging system includes a 2D sensor array generating a series of image frames and The sensor array can be selectively operated in a rolling shutter mode of operation or a pseudo global shutter mode of operation. The imaging system further includes an imaging lens assembly to focus light from the field of view onto the sensor array and an image analysis system for analyzing the series of image frames generated by the sensor array for image brightness and, based on image brightness, operating the sensor array in a selected one of the rolling shutter mode of operation and the pseudo-global shutter mode of operation.

Abstract: The CMOS image sensor includes a plurality of photoelectric conversion elements arranged in a matrix having a plurality of rows and columns. A plurality of floating junctions are provided, each of which is arranged between one of a plurality of pairs of the photoelectric conversion elements arranged in adjacent two rows and is connected to one of the pairs of the photoelectric conversion elements, so that output signals of the pair of the photoelectric conversion elements may be transferred. Output circuits are connected to a plurality of the floating junctions arranged in the column for reading in common the output signals of the photoelectric conversion elements transferred to these flowing junctions. Output signal lines are provided for each column so as to supply output signals of the output circuits. The output circuits are arranged between the pairs of photoelectric conversion elements adjacently arranged in the row.

Abstract: An apparatus and method for generating a programmable boost signal. A first input receives at least one programming control signal. A second input receives a reference signal. The programmable boost signal generation circuit receives the programming control signal and the reference signal and generates a boost signal with at least two programmable levels based on the reference signal. The level of the boost signal is selected by the programming control signal.

Abstract: A solid-state imaging device includes at least a pixel unit, a trigger receiver, a storage controller, and a reading circuit. In the pixel unit, pixels are two-dimensionally arranged in a matrix. The trigger receiver receives a first trigger which is a pre-instruction to start charge storage in the pixels and a second trigger which is an instruction to start the charge storage. The storage controller controls the pixels so as to start and end the charge storage in the pixels of a plurality of rows at the same time after the second trigger is received. The reading circuit reads a reset signal corresponding to one frame before the charge storage is ended after the first trigger is received, and reads a captured image signal corresponding to one frame after the second trigger is received.

Abstract: Preview mode low-resolution readouts occur, and then a shutter button on a camera is pressed, which causes an image sensor cleanout operation to occur. Following the cleanout, a high-resolution readout occurs. As rows of sensor values are read, the first rows are rows corresponding to a pre-defined horizontally-extending shielded area. There are no valid area sensor elements to either side of the horizontally-extending area. Data values read from the horizontally-extending area are used to determine optical black (OB) values that are then used to adjust the valid area values read out of the image sensor in that same frame. The same OB values are used throughout the adjusting of the valid area values of the entire frame. No values from the preview readouts are used in the OB value determination, so there is a clean break between the preview mode OB level and the high-resolution capture OB level.

Abstract: The signal processing circuit of the present invention comprises a drive unit and a processing unit for picture signal. The drive unit supplies each of the shift pulses separately to the electronic shutter shift register and the readout shift register. The processing unit for picture signal designates a control start position of a digital picture signal outputted from an A/D converter and performs interpolation processing thereon along the horizontal direction and the vertical direction. The drive unit adjusts cycles of each of the shift pulses for controlling a vertical-line readout rate of the solid-state imaging device, and then intermittently reads out the analog picture signal from the solid-state imaging device. The processing unit for picture signal performs vertical-line interpolation processing in accordance with the vertical-line readout rate for extending a part of picture area of the digital picture signal.

Abstract: In a readout bus architecture having a first column, a readout means is coupled to a photodetector and configured to transfer charge from the photodetector. A select means is coupled to the photodetector and is configured to transfer charge from the photodetector. An address circuit is coupled to the first column through the select means and is configured to generate and decode an address and turn on the select means for the first column if the address matched the first column and if the address circuit received a corrected enable signal indicating that the first column is not defective. A correction circuit is coupled to the address circuit and is configured to generate the corrected enable signal indicating that the first column is not defective if the correction circuit determined that the first column is not defective.

Abstract: In a solid state image pickup apparatus with a photodetecting device and one or more thin film transistors connected to the photodetecting device formed in one pixel, a part of the photodetecting device is formed over at least a part of the thin film transistor, and the thin film transistor is constructed by a source electrode, a drain electrode, a first gate electrode, and a second gate electrode arranged on the side opposite to the first gate electrode with respect to the source electrode and the drain electrode, and the first gate electrode is connected to the second gate electrode every pixel, thereby, suppressing an adverse effect of the photodetecting device on the TFT, a leakage at turn-off TFT, variation in a threshold voltage of the TFT due to an external electric field, and accurately transferring photo carrier to a signal processing circuit.

Abstract: When a signal is read from a CCD solid-state image pickup element, the CCD solid-state image pickup element is driven with at least two driving voltages so that high-speed reading is performed with generation of noise due to interference between the driving voltages reduced. The CCD solid-state image includes a charge storage section between a vertical transfer register and a horizontal transfer register. By performing the transfer of charge in the direction of columns during an effective transfer period of the transfer in the direction of rows, signal charge of one row generated by a light receiving sensor is transferred to the charge storage section, and by performing the transfer outside the effective transfer period in the transfer in the direction of the row, the signal charge of one row transferred to the charge storage section is transferred to the horizontal transfer register.

Abstract: An image sensor generates an image signal with a differential response to image light. The image sensor has an array of photosites divided into standard photosites and non-standard photosites. A limiter provides the standard photosites with a predetermined standard response to a light exposure and the non-standard photosites with a predetermined slower response to the same light exposure. The standard photosites and nonstandard photosites both sparsely sample the array in a predetermined pattern.

Abstract: An image sensing apparatus has an image sensing device. The image sensing device includes a photoelectric conversion element that photoelectrically converts an optical image to acquire image data, and a readout control unit that reads out, in accordance with a supplied readout rule, the image data acquired by the photoelectric conversion element. The image sensing device also includes an image scaling ratio selection unit that selects the scaling ratio of the image to be output, a readout scheme selection unit that selects, in accordance with the selected image scaling ratio, the readout scheme of the image data to be read out from the photoelectric conversion element by the readout control unit, and a readout rule supply unit that supplies, to the readout control unit, a readout rule corresponding to the readout scheme selected by the readout scheme selection unit.

Abstract: A pixel section Pm,n includes a photodiode PD, a first capacitance section C1, a second capacitance section C2, and transistors T1-T6. The transistor T1 transfers the electric charge generated by the photodiode PD to the first capacitance section C1. The transistor T2 transfers the electric charge generated by the photodiode PD to the second capacitance section C2. The amplification transistor T3 outputs a voltage value corresponding to the amount of electric charge accumulated in the first capacitance section C1. The transistor T4 selectively outputs to the wiring L1,n the voltage value outputted from the amplification transistor T3. The transistors T3 and T4 constitute a source follower circuit. The transistors T5 and T6 selectively output to the wiring L2,n the electric charge accumulated in each of the first capacitance section C1 and the second capacitance section C2.

Abstract: A solid-state imaging device includes a photoelectric conversion unit 110, an analog shift register, and signal output units 131 and 132. The analog shift register is divided into a first transfer section 121 and a second transfer section 122 with a substantially central region of the analog shift register being set as a boundary. A common transfer section 123 is provided in the boundary between the first transfer section and the second transfer section. The common transfer section 123 selects, as a transfer path of signal charges transferred from the photoelectric conversion unit 110, either a first path through the first transfer section 121 or a second path through the second transfer section 122.

Abstract: A photoelectric conversion device includes a pixel array portion, signal processing portion, common readout circuit, and common signal line. The signal processing portion includes the first power line and the second power line which is formed on the opposite side to the first power line when viewed from the common signal line. The common signal line has a portion formed along the signal processing portion to transfer, to the common readout circuit, a signal supplied from the signal processing portion. A cross connection line which crosses the portion of the common signal line along the signal processing portion connects the first and second power lines.

Abstract: An image sensor generates an image signal with a differential response to image light. The image sensor has an array of photosites divided into standard photosites and non-standard photosites. A limiter provides the standard photosites with a predetermined standard response to a light exposure and the non-standard photosites with a predetermined slower response to the same light exposure. The standard photosites and nonstandard photosites both sparsely sample the array in a predetermined pattern.

Abstract: A focus detection apparatus includes an image sensor that applies photoelectric conversion to incident light and accumulates charge, a first output unit that outputs electric signals based on the charge accumulated in the image sensor through multiple channels, and a focus detection unit that detects a phase difference on the basis of the electric signals outputted from the plurality of channels.

Abstract: An image sensing apparatus has an image sensing device. The image sensing device includes a photoelectric conversion element that photoelectrically converts an optical image to acquire image data, and a readout control unit that reads out, in accordance with a supplied readout rule, the image data acquired by the photoelectric conversion element. The image sensing device also includes an image scaling ratio selection unit that selects the scaling ratio of the image to be output, a readout scheme selection unit that selects, in accordance with the selected image scaling ratio, the readout scheme of the image data to be read out from the photoelectric conversion element by the readout control unit, and a readout rule supply unit that supplies, to the readout control unit, a readout rule corresponding to the readout scheme selected by the readout scheme selection unit.

Abstract: A CCD control system is provided which can prevent CCD breakage caused by a latchup, etc. by having a function to detect two kinds of errors, Vsub error and power voltage error to prevent a latchup, etc. with placing the switching circuit in the CCD section, and the Vout signal monitoring circuit, without laying additional wiring to the CCD or making the diameter of the insertion tube larger. An electronic endoscope adopting the CCD control system is also provided which can prevent CCD breakage caused by a latchup, etc.

Abstract: A solid state imaging element comprises: a plurality of photoelectric conversion elements arranged in a two-dimensional array-shape; a plurality of first electric charge transmission sections that transmit signal electric charges detected by the photoelectric conversion elements; a plurality of second electric charge transmission sections having the same transmission stage numbers, wherein said plurality of second electric charge transmission sections corresponds to said plurality of first electric charge transmission sections respectively and comprises plural subgroups each including adjacent second electric charge transmission sections in given numbers; electric charge detection sections that detects the signal electric charge transmitted from said plurality of second electric charge transmission sections, each of the electric charge detection sections being provided for each of the plural subgroups; and a transmission control section that controls, for each of the plural subgroups, an order of transmission

Abstract: The invention proposes an image sensor comprising a picture capture matrix having N rows and K columns of image dots, a read register at the free end of the K columns. In order to improve the read speed of the matrix, the invention proposes that the horizontal transfer into the read register be continued even while the vertical signals for shifting from one row to the other are operative, without however continuing the horizontal transfer while the transfer gate between columns and horizontal register is open. The unloading time of the horizontal read register therefore overlaps the time reserved for each vertical transfer step, instead of these times being added together. The gain in time, being repeated for each row, will be all the more significant the higher the number of rows. Means are provided for limiting the effect of the column transfer switching operations on the reading of the charges at the output of the read register.

Abstract: In a solid-state image capturing device including a pixel array arranged in a row direction and a column direction orthogonal thereto, and a vertical register having a plurality of transfer electrodes which serves to read signal charges Qa, Qb, . . . generated by light receipt of each of pixels A, B, . . . and to sequentially transfer the signal charge in the column direction upon receipt of a transfer pulse, an electric potential well for a smear charge is generated and an unnecessary charge q in the vertical register is collected into the electric potential well for a smear charge before the signal charge is read from the pixels A, B, . . . onto the vertical register (a timing t707), an electric potential well for signal charge transfer is then generated and the signal charges Qa, Qb, . . . are read from the pixels A, B, . . .

Abstract: An image pickup device has a transparent insulation film formed on the primary surface of a semiconductor substrate and a solar cell formed on the insulation film. The solar cell has a transparent electrode film, a p-type conductive film, an n-type conductive film and a transparent electrode film stacked in this order from the bottom. Three photoelectric conversion films are stacked on the solar cell for sensing red, green and blue components, respectively. The solar cell is sensitive to infrared wavelengths. The image pickup device thus allows a battery cell to be reduced in volume.

Abstract: An image pickup apparatus has an image pickup device including an imaging section, in which signal charges read out from plural photosensitive cells are vertically transferred over vertical transfer paths and the transferred signal charges are in turn horizontally transferred over a horizontal transfer path, which has a branching section for assigning the transferred signal charges to plural output channels, i.e. plural horizontal transfer paths provided at the end of the horizontal transfer path. A temperature sensor for detecting the temperature of the image pickup device is provided on the imaging section, and a temperature-induced drift compensator corrects a transfer error of signal charges in the image pickup device. The compensator modifies transfer error correction based on the detected temperature. The image pickup apparatus can thus substantially reduce an assignment error even when the temperature of the image pickup device changes.

Abstract: An image-signal processing apparatus (1) designed to process the signals output from a CCD image sensor (10) that reads pixel data for one screen, line by line, divides the pixel data into a plurality of channels and outputs the pixel data thus divided. The image-signal processing apparatus (1) detects and corrects the black level of each pixel data item that the image sensor (10) has output for one channel. The image-signal processing apparatus (1) detects and corrects the gain difference between channels, which pertain to the pixel data items output from the image sensor (10). Hence, the apparatus (1) can correct the black level of each pixel data item and the gain difference between channels with high accuracy, when used in combination with an image sensor that divides pixel data into a plurality of channels.

Abstract: A pixel circuit for an image sensor uses a common reset transistor for resetting both of a photodiode node and a memory node. Respective transfer gates connect the common reset transistor to the photodiode node and to the memory node, and connect photodiode node and the memory node to each other. A source follower enabled with a row select gate provides a readout signal from the memory node. The use of the common reset transistor and the operational timing of the circuit elements improves fixed pattern noise arising from transistor feedthroughs in the pixel circuit.

Abstract: A solid-state image pickup device has a discharge gate and a discharge drain provided adjacent to a connection of a vertical CCD and a horizontal CCD so that charges accumulated for an arbitrary pixel can be completely depleted. Data can be read at an arbitrary decimation rate only by changing a drive condition of the discharge gate. An arbitrary decimation rate can be achieved and a frame rate, resolution or the like can easily changed while vertical transfer electrodes can keep the same wiring structure as in a still mode (normal reading) without making a complicated wiring structure of vertical transfer electrodes such as the prior art. Therefore, this solid-state image pickup device can achieve an arbitrary decimation rate and easily change a frame rate, resolution or the like only by changing drive conditions without making a complicated wiring structure of vertical transfer electrodes.

Abstract: A digital camera includes a shutter button. When taking a still picture of a subject in response to operation of the shutter button, a TG carries out first exposure and second exposure. The first exposure and the second exposure are simultaneously started by the suspension of outputting a charge sweep-out pulse. Elapsing a first exposure period, the TG reads a first charge out of a part of the light-receiving elements, thereby ending the first exposure. Elapsing a second exposure period, a mechanical shutter is closed thereby ending the second exposure. A second charge produced due to the second exposure is read out after completing the transfer of the first charge. The first and second charges outputted from the CCD imager are combined together by an image combining circuit.

Abstract: A method and apparatus for driving a solid state image pickup device. The method and apparatus include setting a first signal charging period and a second signal charging period for each one of a plurality of unit pixels. The second signal charging period is shorter than the first signal charging period. A first signal charge is produced during the first signal charging period and a second signal charge is produced during the second signal charging period. It is judged whether the first signal charge is saturated or not saturated. Then based on this judgment an input light amount is determined. The input light amount is determined using only the second signal charge when the first signal charge is saturated. The input light amount is determined using only the first signal charge when the first signal charge is not saturated.

Abstract: An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. A Simple Floating Gate (SFG) pixel structure could also be employed in the imager to provide a non-destructive readout and smaller pixel sizes.

Abstract: An image pickup device comprises a CCD solid-state imaging element composed of a charge accumulation section and a charge transfer section, a CCD driver for driving the imaging element, a mechanical shutter for switching between the transmitting state and shading state of the subject's image on the imaging element, and a controller for controlling the CCD driver and mechanical shutter. The controller, closes, opens and closes the mechanical shutter in that order. After having discharged charges in the first closing, the device refrains from driving the vertical transfer channel during the period that the channel is exposed to light rays and ends exposure in the presence of a charge transfer pulse. Moreover, in a low-speed shutter, the image pickup device switches to exposure end with the mechanical shutter.

Abstract: A pixel sensing subsystem (110) for a solid state image sensor includes frame timing logic (114) that produces a frame timing signal indicative of an end-of-frame time and a beginning-of-frame time and reset logic (116) that produces a reset signal for a charge accumulator of pixel sensing electronics. The reset logic (116) asserts the reset signal at least once between the end-of-frame time and the beginning-of-frame time to prevent saturation of the pixel sensing element.

Abstract: In image signal processing, the color saturation values of image signals are accumulated within each of a plurality of color saturation calculation regions by a color saturation accumulator circuit 13, and the image signals obtained in a color saturation calculation region in which the result of the color saturation value accumulation thus performed by the color saturation accumulator circuit 13 is low are accumulated for each of image signal types C1 to C4 by an image signal accumulator circuit 14. Based on the results of this accumulation performed for each of the image signal types C1 to C4, constants with which to counterbalance the amounts of light transmitted for the image signals C1 to C4 are determined and fed to a transmitted light amount corrector circuit 1.

Abstract: An image reading device including an image sensor for optically reading a document and outputting an electric signal, a period control circuit for controlling the period of a horizontal synchronizing signal in order to change a time period during which charge is stored in the image sensor, and a scanning speed control circuit for controlling the scanning speed of the document to be a speed conforming to the period of the horizontal synchronizing signal. The horizontal synchronizing signal and the scanning speed are variably set to values corresponding to an image reading mode, for example.

Abstract: Defective sweep occurs when strong light enters, i.e., a quantity of input light increases, and smear and blooming components increase during an exposure period because a quantity of unnecessary charge to be swept during a sweep-out transfer period of a first field side exceeds a quantity of charge to be handled. The inventive image pickup system solves the above-mentioned problem by setting the sweep-out transfer period of the first field side to be longer than the sweep-out transfer period of a second field in a digital still camera which controls an exposure time by using a mechanical shutter in using as an image pickup device, a solid-state image pickup device which carries out the sweep-out transfer of transferring and sweeping charges within a vertical transfer section quickly more than transfer speed in transferring the signal charges read out from a sensor section to the vertical transfer section before reading out the signal charges from the sensor section to the vertical transfer section.

Abstract: A pinned photodiode is operated without a transfer gate. This is done by forming a pinned photodiode which has a selective connection to the substrate. When the connection is turned on, the photodiode is pinned to the substrate, and kept at a specified potential. When the connection is off, the photodiode is disconnected from the substrate and hence floats. In this way, the area above the photoreceptor can be used both for a reception area and for a charge transfer area.

Abstract: An integrated circuit architecture of contact image sensor for generating bi-level images and associated method are disclosed. The architecture comprises an image sensor, an amplifier, an analyzing circuit and a comparator, in one particular embodiment, it further comprises an electrically erasable programmable read-only memory (EEPROM). The amplifier is coupled to the image sensor and receives electronic signals therefrom and further receives pairs of gain and offset from the EEPROM. The electronic signals are adjusted in the amplifier respectively and sequentially in accordance to the pairs of gain and offset. The analyzing circuit determines a dynamic threshold to the comparator that subsequently produces the bi-level images.

Abstract: A multiple-field sensor for a scanner suitable for scanning a document. The scanner includes a multiple-field sensor, an average accumulator, and a block of memory. The multiple-field sensor has a plurality of sensing lines for each color channel. Each sensing line picks up a portion of image signal from the document during scanning. The sensing lines scan the same portion of the document to produce corresponding image signals. The average accumulator averages the image signals obtained from the sensing lines of the same color channel to produce an average image signal. The block of memory is used as a storage area for image signals in general and the average image signal in particular.

Abstract: The charge of pixels in a FPA array is retrieved by propagating an optical wave through a waveguide to interact with pixel charges from the FPA. An optical detector receives an optical wave altered by the respective pixel charges as it travels. The optical wave is sensed after passing through the waveguide. In a preferred embodiment, separate waveguides interact separate optical waves with charge from FPA pixels. Information concerning the charge is obtained with separate optical waves in the separate waveguides. In a preferred example of an N×M array according to an embodiment of the invention, a complete frame of data includes only N+M data values. A direct memory is also provided, where the pixel charges are held by maintaining an electric field to the pixels making the charge retrievable by an optical wave multiple times until the electric field is removed or reduced.

Abstract: An interline transfer type solid imaging device includes a first photosensitive section, a second photosensitive section, and a vertical transfer section. The interline transfer type solid imaging device reads an image signal corresponding to a first field from the first photosensitive section, and reads an image signal corresponding to a second field from the second photosensitive section. First signal charges stored in the first photosensitive section are read into the vertical transfer section. A portion of second signal charges stored in the second photosensitive section are shifted into the first photosensitive section.

Abstract: A solid state image pickup device is provided which can reduce crosstalks between range finding photoelectric conversion elements (AF sensor) and photometry photoelectric conversion elements (AE sensor). The solid state image pickup device has an n-type epitaxial semiconductor region, a p-type first well region formed in the semiconductor region, a p-type second well region formed in the semiconductor region and electrically separated from the first well, an n-type first impurity doped region formed in the first well region and an n-type second impurity doped region formed in the second well, wherein a photometry photoelectric conversion element is formed by using the p-type first well region and n-type first impurity doped region, and a range finding photoelectric element is formed by using the p-type second well region and n-type impurity doped region.

Abstract: A programmable timing generator for a digital imaging system has a first clock generator and a second clock generator. The first clock generator includes a programmable microsequencer and generates a plurality of first clock signals in response to the microsequencer. The second programmable clock generator is responsive to the microsequencer and generates second clock signals. The first clock signals have a lower frequency than the second clock signals. In a typical implementation, the second clock signals are called horizontal clock signals, which are used for clocking rows of pixel data out of a digital image sensor, while the first clock signals are called vertical clock signals that are used for shifting pixel data one position in vertical shift registers in the digital image sensor. The horizontal or vertical clock signals can also be used to control the image capture operation of the digital sensor, with the programmable microsequencer being used to control the image capture exposure time.

Abstract: A solid-state image pickup apparatus includes a solid-state image sensor having photosensitive cells and vertical transfer paths. The cells are bidimensionally arranged for converting light incident from a subject via optics to electric charges corresponding to the light to store signal charges. The vertical transfer paths each adjoins the photosensitive cells arranged on a particular column for vertically transferring the signal charges. Before the signal charges are transferred from the cells to the vertical transfer paths, a sweep controller causes unnecessary charges on the vertical transfer paths to be swept out. The sweep controller controls a sweep transfer period necessary for the sweep transfer in dependence upon the amount of the unnecessary charges.

Abstract: A storage pixel sensor disposed on a semiconductor substrate comprises a photosensor. At least one nonlinear capacitive element is coupled to the photosensor. At least one nonlinear capacitive element is arranged to have a compressive photocharge-to-voltage gain function. An amplifier has an input coupled to the nonlinear capacitor and an output. Other, non-capacitive elements may be employed to produce a compressive photo-charge-to-voltage gain having at least one breakpoint.

Abstract: There are provided a method for driving a solid-state image pickup apparatus, a solid-state image pickup device and a camera which enables fast operation and makes applicable of the conventional algorithm in signal processings by reducing the number of samples in the horizontal and vertical directions. Three or more odd number pixels in the solid-state image pickup device (1) are made one block, signal charges of predetermined pixels being thinned out to be transferred to transfer registers (4, 7), resulting signal charges being added within the transfer registers (4, 7) so that the center of gravity of pixels (pixel center) may coincide with a pixel at the center of one block and resulting mixed charge being transferred.