Abstract: Before a signal charge from a photodiode 1 is transferred to a signal charge accumulating portion 3 by a scanning circuit 20, a reset transistor 4 is turned on for a prescribed period to reset the voltage of the signal charge accumulating portion 3 in a state in which the voltage of a read signal line 7 is retained at a first voltage (Vg) by lowering the drain side voltage of an amplifying transistor 5. Subsequently, by raising the drain side voltage of the amplifying transistor 5 by a scanning circuit 20 to make the read signal line 7 have a second voltage (Vrst) higher than the first voltage (Vg), the voltage of the signal charge accumulating portion 3 is made higher than a voltage immediately after resetting. Then, the transfer transistor 2 is turned on to transfer the signal charge from the photodiode 1 to the signal charge accumulating portion 3.

Abstract: An improved monolithic solid state imager comprises plural sub-arrays of respectively different kinds of pixels, an optional filter mosaic comprising color filters and clear elements, and circuitry to process the output of the pixels. The different kinds of pixels respond to respectively different spectral ranges. Advantageously the different kinds of pixels can be chosen from: 1) SWIR pixels responsive to short wavelength infrared (SWIR) in the range of approximately 800-1800 nm; 2) regular pixels responsive to visible and NIR radiation (400-1000 nm) and wideband pixels responsive to visible, NIR and SWIR radiation.

Abstract: An imaging system may include an image sensor array and column randomizing multiplexers. The imaging system may include a data output circuit and image readout circuitry such as analog amplifiers, analog-to-digital converters, and memory circuits. The column randomizing multiplexers may include a first column randomizing multiplexer between the image sensor array and at least some of the image readout circuitry. The first column randomizing multiplexer may randomly connect columns of the image sensor array to the image readout circuitry. The connections made by the first column randomizing multiplexer may be randomized as each row of the image sensor array is read out. The column randomizing multiplexers may include a second column randomizing multiplexer between at least some of the image readout circuitry and the data output circuit. The second column randomizing multiplexer may reorder image data for the image readout circuitry.

Abstract: An image sensor for electronic cameras includes a plurality of pixels arranged in rows and columns, wherein at least one common column is associated with a plurality of pixels of a column. Each pixel includes a light-sensitive detector element to produce an electric charge from incident light, a selection device to connect the detector element directly or indirectly to the associated column line and at least one switching device. The image sensor furthermore has a control device for controlling the selection device and the at least one switching device of the respective pixel. The control device is designed such that the selection device of a first pixel is activated within a time period in which the at least one switching device is activated in a second pixel with which the same column line is associated.

Abstract: An imaging device has pixels being disposed two-dimensionally, in matrix, a plurality of vertical signal lines each coupled to a plurality of the pixels in a column direction, a column amplifier amplifying an optical signal and a reset signal, and a holding part holding each of the optical signal and the reset signal. The imaging device is provided with a first clip driving circuit which is disposed between the vertical signal lines and the column amplifier and clips a signal out of a predetermined voltage, a first clip voltage generation circuit which gives a clip voltage to the first clip driving circuit, a second clip driving circuit which is disposed between the column amplifier and the holding part and clips a signal out of a predetermined voltage, and a second clip voltage generation circuit which gives a clip voltage to the second clip driving circuit.

Abstract: An image sensor has a per-column ADC arrangement including first and second capacitors for correlated double sampling, and a comparator circuit. The capacitors are continuously connected to, respectively, the analog pixel signal and a ramp signal without use of a hold operation. The comparator circuit comprises a differential amplifier having one input connected to the junction of the two capacitors and another input connected to a reference signal. The reference signal is preferably sampled and held from a reference voltage. The use of a differential amplifier as first stage of the comparator addresses problems arising from ground voltage bounce when a large pixel array images a scene with low contrast.

Abstract: A solid-state image pickup apparatus includes a reading unit having a plurality of pixels connected thereto, holding signals from the pixels, and a control unit capable of controlling operations of the pixels and reading unit. The control unit controls the pixels and reading unit in a first operation mode without addition, in a second operation mode in which signals from aa of the pixels are added, aa being an integer greater than one, and in a third operation mode in which signals from bb of the pixels are added, bb being an integer greater than aa. The reading unit includes a holding unit having a capacitance value of C, and the holding unit includes a first capacitor having a capacitance value of C/bb and a second capacitor having a capacitance value of C/p, p being a common multiple of aa and bb.

Abstract: An image sensor controls the gain of a pixel signal on a pixel-by-pixel basis and extends a dynamic range while maintaining a S/N ratio at a favorable level. A column unit in an image sensor is independently detects a level of each pixel signal and independently sets a gain for level of the signal. A photoelectric converting region unit has pixels arranged two-dimensionally with a vertical signal line for each pixel column to output each pixel signal. The column unit is on an output side of the vertical signal line. The column unit for each pixel column has a pixel signal level detecting circuit, a programmable gain control, a sample and hold (S/H) circuit. Gain correction is performed according to a result of a detected level of the pixel signal.

Abstract: Methods and apparatus are provided for performing multiple correlated double sampling (CDS) operations on an imaging pixel, and in some cases on an array of imaging pixels, during a single integration cycle of the pixel(s). The multiple CDS operations may produce multiple CDS values, which may be processed in combination to produce a resulting value substantially free of various types of noise. The CDS operations may be performed using a CDS circuit including a single-ended charge amplifier having an input capacitor. The charge amplifier may also include a variable capacitance providing a variable gain. The variable capacitance may be provided by a feedback capacitor.

Abstract: A compressive imaging system for optimizing dynamic range during the acquisition of compressed images. A light modulator modulates incident light with spatial patterns to produced modulated light. A light sensing device generates an electrical signal representing intensity of the modulated light over time. The system amplifies a difference between the electrical signal and an adjustable baseline voltage and captures samples of the amplified signal. The adjustable baseline voltage is set to be approximately equal to the average value of the electrical signal. A compressive imaging system for identifying and correcting hot spot(s) in the incident light field. Search patterns are sent to the light modulator and the corresponding samples of the electrical signal are analyzed. Once the hot spot is located, the light modulating elements corresponding to the hot spot may be turned off or their duty cycle may be reduced.

Abstract: An image shooting device includes: an image shooting part formed of a pixel array and a reading control part in which the pixel array includes a plurality of pixels arranged in a matrix form, each of the pixels having a photoelectric conversion part, a transfer transistor, an amplifying transistor, and a reset transistor, and the reading control part performs reading by switching a first reading control in which the reset transistor is controlled to be turned off before exposure to read the pixel signal from a part of rows of the pixel array and a second reading control in which the pixel signal is read from the pixel array after the exposure; and a correcting part correcting the pixel signal read through the second reading control based on the pixel signal read through the first reading control.

Abstract: A solid-state image capturing apparatus includes a pixel array in which a plurality of pixels are arranged in a matrix, where each of the pixels includes: a photodiode for obtaining a signal charge by a photoelectric conversion of an incident light; and an amplifying transistor for the signal charge obtained at the photodiode, and where the amplifying transistor is configured in such a manner that a gate area of the amplifying transistor is defined to be larger than a gate area of other transistors that configure the pixel.

Abstract: An image sensor includes a data formatter and a transformer. The data formatter divides N-bit data into K-bit units with N and K being natural numbers and with K<N. The transformer is configured to generate an output signal having a respective signal level selected from at least three possible levels depending on each K-bit unit received from the data formatter for high speed operation of the transformer and the data formatter.

Abstract: A horizontal scanning period is divided into n parts (n is a natural number), so that horizontal scanning can be performed (n×y) times in one frame period. That is, n signals can be outputted from each pixel, and storage times of the n signals are different from one another. Then, since a signal suited to the intensity of light irradiated to each pixel can be selected, information of an object can be accurately read.

Abstract: An apparatus includes pixels each having a transistor that transfers a charge of a photoelectric conversion unit, an amplification unit that receives the transferred charge, a scanning unit that supplies, to the transistor, a conductive pulse, a non-conductive pulse, and an intermediate-level pulse having a peak value between the conductive pulse and the non-conductive pulse, a generating unit that generates an image signal using a signal based on a charge transferred in response to the conductive and intermediate-level pulses, and a control unit that changes at least one of a pulse width of the intermediate-level pulse and the peak value in accordance with information on the detected temperature. The conductive and intermediate-level pulses are supplied to the transistor during a light shielding period of the photoelectric conversion unit.

Abstract: According to one embodiment, a pixel outputs a photoelectrically converted signal. A reference ramp generating circuit generates a first ramp wave and a second ramp wave having a step width smaller than that of the first ramp wave. A column ADC circuit performs switching between the first ramp wave and the second ramp wave on the basis of the signal level of the signal from the pixel, compares the ramp wave with the signal level, and detects a signal component of the pixel by CDS.

Abstract: A solid-state imaging apparatus includes a pixel array in which a plurality of pixels are arranged, wherein the pixel array has a region formed from one of an electrical conductor and a semiconductor to which a fixed electric potential is supplied, each pixel includes a photoelectric converter, a charge-voltage converter which converts charges generated by the photoelectric converter into a voltage, and an amplification unit which amplifies a signal generated by the charge-voltage converter by a positive gain and outputs the amplified signal to an output line, and the output line comprising a shielding portion arranged to shield at least part of the charge-voltage converter with respect to the region.

Abstract: A solid-state image capturing apparatus has a plurality of light receiving sections for performing photoelectric conversion on incident light to generate a signal charge, a charge transfer section provided along a light receiving section arranged in a column direction among the plurality of light receiving sections, for transferring signal charges generated in the light receiving section arranged in the column direction to a predetermined direction, and at least two layers of charge transfer electrodes provided on the charge transfer section via an insulation film, where a plane view width readable from the light receiving section is 50% to the whole edge of the edge of the light receiving section on the charge transfer section side.

Abstract: An image sensor circuit comprises at least one pixel cell for providing an output signal which is variable according to illumination of said pixel cell between a maximum and a minimum level, an analogue-to-digital converter for converting output signals from said pixel cell into digital data, and an offset signal source for providing an offset signal having a level between said maximum and minimum levels. The analogue-to-digital converter is fully differential and is connected to said pixel cell and to said offset signal source.

Abstract: A bus driver having one or more feedback paths between a column amplifier and a pixel bus in an image sensor is described.

Abstract: A solid-state imaging device 1 according to an embodiment of the present invention, in a solid-state imaging device for which M pixel units P(1) to P(16) for performing photoelectrical conversion are arrayed, includes N holding units H(1) to H(4) (N is smaller than M) that sequentially hold output signals from different pixel units out of the M pixel units P(1) to P(16), and an amplifying section 30 that sequentially amplifies output signals from the N holding units H(1) to H(4).

Abstract: In a solid-state image pickup apparatus having a pixel array unit composed by two-dimensionally arranging pixels for detecting a physical quantity in a row-column manner, pixel signals of a plurality of systems having different sensitivities are read from the pixel array unit in an analog manner, the pixel signals of the plurality of systems are amplified at respective basis amplification rates when a gain setting of the analog pixel signals is lower than a predetermined gain, and a pixel signal of at least one system having a high sensitivity among the plurality of systems is amplified at a plurality of amplification rates including an amplification rate higher than a basis amplification rate of the system having the high sensitivity when the gain setting is equal to or higher than the predetermined gain.

Abstract: An image pickup apparatus capable of improving a conversion speed of column parallel A/D converters, while preventing a gradation representation of image pickup signals from becoming rough. The image pickup apparatus includes a CMOS sensor having A/D converters provided on output sides of column amplifiers for respective columns of two-dimensionally arranged pixels. The A/D converters have a first operation mode in which they operate with a first number of conversion bits and at a first conversion speed and a second operation mode in which they operate with a second number of conversion bits and at a second conversion speed. A signal processing circuit adds together plural pieces of two-dimensionally arranged pixel data output from the A/D converter that operate in the second operation mode, thereby expanding the number of gradation bits of the pixel data from the second number of conversion bits.

Abstract: Embodiments of the present invention provide a correlated double sampling (CDS) circuit and a CMOS image sensor unit using the CDS circuit. The CDS circuit shifts levels of sampled sensing signal and reset signal with equal amounts. Thus a voltage difference of the sampled sensing signal and the reset signal remains unchanged, and their levels may fall within a linear input range by adjusting their levels. Compared to a conventional CDS circuit, a gain of the CDS circuit provided by the embodiment of the present invention is not reduced, and thus a design complexity of a rear circuit thereof is lower, and an induced noise is relatively low. Furthermore, the CMOS image sensor unit using the CDS circuit provided by the embodiment also has these advantages.

Abstract: A solid-state image pickup device has signal lines to which photoreceiving elements are connected; a clamp circuit that has clamp capacitors where one terminal is connected to the signal lines and the other terminals are short-circuited, has a switch for applying a reference voltage to the other terminals by the clamping operation, and adds signals from the plurality of elements provided in the row direction along with the clamping operation; adding means (switches and capacitors) which is connected to the other terminals, adds addition signals of the respective element rows outputted from the other terminals, and adds the signals of the plurality of elements provided in the column direction; an amplifier connected to the that means; a switch for resetting the amplifier's input side; and circuit means (switches and capacitors) for outputting an offset of and the signal from the amplifier.

Abstract: According to one embodiment, a solid-state imaging device includes a pixel array unit where pixels are disposed in a matrix and a column amplifying circuit that is disposed at an end of the pixel array unit and amplifies a unit signal of a unit pixel read from each pixel with at least first and second amplification factors, and outputs a plurality of amplified signals.

Abstract: A solid-state imaging device 1 according to an embodiment of the invention includes: pixel units P(x, y) each of which includes a photoelectric conversion element and an amplifying unit for a pixel unit and which are two-dimensionally arranged; at least one row of optical black units Pob(x, y) each of which includes a photoelectric conversion element, an amplifying unit for a pixel unit, and a light shielding film that covers the photoelectric conversion element, the photoelectric conversion element and the amplifying unit for a pixel unit being the same as those of the pixel unit P(x, y); and at least one row of optical gray units Pog(x, y) each of which includes an amplifying unit for a pixel unit which is the same as that of the pixel unit and to which a reference voltage is input. The value of the reference voltage is less than the value of the output signal from the photoelectric conversion element in a saturated state.

Abstract: An imaging apparatus comprises: a plurality of memory capacitors for holding signals output from pixels; and a plurality of first switches for respectively connecting the memory capacitors to a common signal line, wherein each of the plurality of memory capacitors includes a terminal connected to the corresponding first switch and supplied with the corresponding signal output from the corresponding pixel, and another terminal supplied with a reference potential, a reference potential supplying unit supplies a first reference potential during a period in which the plurality of memory capacitors hold the signals, and supplies a second reference potential having a potential difference from a potential of the common signal line before turning-on of the first switch, the potential difference being larger than that of the first reference potential, during a period in which the first switches are turned on.

Abstract: A solid-state image pickup device which has means of adding signals from plural pixels, which achieves a high S/N and a pickup device suitable for both static and moving image pickup. The device has a pixel unit having plural pixels arranged two-dimensionally and outputting pixel signals derived by photoelectric conversion, and has a first mode reading a pixel signal every pixel, and a second mode adding and reading a plurality of pixel signals, having a variable gain column amplifier for performing readout at different gains in the first mode and second mode. The device has plural output lines where signals from plural pixels arranged in one line are outputted respectively, and at least one amplifier is connected to each of the plurality of output lines. Gain at time of second mode readout is higher than gain at time of first mode readout.

Abstract: A column A/D converter includes two column A/D converting elements. Each of the column A/D converting elements is operable to divide a pixel signal read out from a pixel array into two blocks i.e. an upper block constituted of upper two bit data, and a lower block constituted of lower two bit data, and sequentially perform A/D conversion with respect to the blocks in the unit of one horizontal scanning period. A controller causes each of the column A/D converting elements to concurrently perform A/D conversion with respect to different blocks of pixel signals at different rows.

Abstract: A solid-state imaging device includes a pixel unit in which unit pixels are arrayed, a complementary-signal generating unit that generates two kinds of complementary signals having complementarity with each other on the basis of analog pixel signals read out from the respective unit pixels in the pixel unit, two kinds of complementary signal lines on which the two kinds of complementary signals are transmitted, a horizontal scanning unit that transfers each of the two kinds of complementary signals on the complementary signal lines, and a differential amplifying unit that receives the signals on the two kinds of complementary signal lines with differential inputs and compares the signals.

Abstract: In an auto-focusing (AF) sensor, it has been difficult to realize high-speed auto focusing and high-accuracy, auto focusing without increasing the scale of a circuit. In the present invention, a common buffer unit is provided for a plurality of memory cell units that are provided in each unit pixel.

Abstract: A solid-state image sensor includes: a plurality of pixels, each having a photodiode, a floating diffusion, a transfer transistor, a reset transistor, and an amplifying transistor; vertical signal lines 31 for receiving signals from the plurality of pixels; sampling capacitors 62; circuits 78 for comparing a voltage on a corresponding one of the vertical signal lines 31 with a reference voltage to determine whether the voltage on the corresponding vertical signal line 31 is higher or lower than the reference voltage; and clip circuits 79 for outputting a clip voltage Vclip to a corresponding one of the sampling capacitors 62 based on the output of a corresponding one of the circuits 78. A voltage on each vertical signal line in the state where the signal accumulated in a corresponding photodiode has been transferred to a corresponding floating diffusion, can be used as a comparison voltage of each column.

Abstract: A liquid crystal display includes: a display with an array substrate having scanning and data lines and an IC chip driving liquid crystal, and a color filter substrate; a light-detector having an optical sensor integrated in the display detecting external light; a detection circuit connected via sensor laid-around lines connecting to light-detector lines; an illuminator illuminating the display panel; and a controller controlling the illuminator based on the detection circuit's output. The data lines are distributed to the chip-mounting area and have terminals at an end for connecting to IC chip bump terminals. Leader lines distribute from the terminals toward the chip-mounting area and have inspection terminals at their ends. Sensor inspection lines connect at one end to the sensor laid-around lines and extend at the other end to the chip-mounting area. Sensor detection terminals are formed at the other end of the sensor inspection lines.

Abstract: In a conventional image pickup apparatus, a plurality of reset methods for resetting a photodiode cannot be set. A row selection unit is provided with a first storage unit for storing an address of a read row, a second storage unit for storing an address of a shutter row, and further a third storage unit for storing an address of a row in which potential of photodiode is fixed.

Abstract: Provided is a dual sampling/pixel gain amplifier (CDS/PxGA) circuit with a shared amplifier, and more particularly, to a dual CDS/PxGA circuit for adjusting a gain of an amplifier based on capacitance. The dual CDS/PxGA circuit comprises: a first sampler for sampling a reset level and a data level of a first pixel; a second sampler for sampling a reset level and a data level of a second pixel; and an operational amplifier for receiving sampling values from the first and second samplers, calculating output signals of the first and second pixels using the sampling values, and amplifying the calculated output signals. Thus, it is possible to reduce a speed of an operational amplifier by using the dual CDS/PxGA structure, reduce power consumption by sharing the operational amplifier, and obtain a variable gain of a wide range by adjusting capacitance using a capacitor array.

Abstract: An solid state image pickup device including a plurality of photoelectric conversion regions (PD1, PD2) for generating carriers by photoelectric conversions to accumulate the generated carriers, an amplifying unit for amplifying the carriers, being commonly provided to at least two photoelectric conversion regions, a first and a second transfer units (Tx-MOS1, Tx-MOS2) for transferring the carriers accumulated in the first and the second photoelectric conversion regions, respectively, a first and a second carrier accumulating units (Cs1, Cs2) for accumulating the carriers flowing out from the first and the second photoelectric conversion regions through a first and a second fixed potential barriers, respectively, and a third and a fourth transfer units (Cs-MOS1, Cs-MOS2) for transferring the carriers accumulated in the first and the second carrier accumulating units to the amplifying unit, respectively.

Abstract: A solid-state imaging device of a three-transistor pixel configuration having no selection transistor has a problem of a non-selection hot carrier white point, which is specific to this apparatus. A bias current during a non-reading period of pixels is made to flow to a pixel associated with an immediately previous selection pixel, for example, the immediately previous selection pixel itself. As a result, dark current only for one line occurs in each pixel, and the dark current for one line itself can be reduced markedly. Consequently, defective pixels due to non-selection hot carrier white points can be virtually eliminated.

Abstract: The solid-state imaging device includes a plurality of pixel units arranged in rows and columns. Each of the pixel units includes: a photodiode that generates a signal voltage corresponding to an intensity of light received; and an amplifier transistor which amplifies the signal voltage in response to a flow of an operating current, and outputs the amplified signal voltage to a column signal line that is provided for each of pixel columns. The solid-state imaging device includes current correction circuits each of which is provided for a corresponding one of the pixel columns and causes a correction current to flow between a power supply line and a grounding line. The correction current fluctuates in an opposite direction to a fluctuation of the operating current flowing into the grounding line from the power supply line via the amplifier element.

Abstract: An amplifier is provided. The amplifier includes a differential amplifier including a tail, a current mirror connected between output terminals of the differential amplifier and a power line receiving a supply voltage, and a first switching circuit for connecting and disconnecting one of the output terminals of the differential amplifier to and from the tail in response to a first switching signal.

Abstract: A solid-state imaging apparatus of the present invention including: a pixel section having pixels two-dimensionally disposed in a row and column directions each containing a photoelectric conversion section and an amplification section for amplifying and outputting as pixel signal an output of the photoelectric conversion section; a first scanning section for selecting rows to be read of the pixel section; a noise suppressing section for effecting noise suppression of the pixel signals; a second scanning section for causing pixel signals having gone through the noise suppressing section to be outputted from a plurality of horizontal signal lines; and a control section having a plurality of drive modes to be set, different in the number of the horizontal signal lines from which the pixel signals are outputted, and, when a drive mode is set, changing in accordance with the set drive mode the manner of connection of a function device within the noise suppressing section associated with the horizontal signal line

Abstract: According to one embodiment, a pixel includes a first amplifier transistor for amplifying a photoelectrically converted signal, a vertical signal line transmits the signal read from the pixel in a vertical direction, and a second amplifier transistor forms a differential pair with the first amplifier transistor and amplifies the signal read by the vertical signal line through the first amplifier transistor.

Abstract: This invention improves linearity of a solid-state image pickup device beyond that of the prior art source follower to improve image quality. The image pickup device has plural pixels disposed in an array. Each pixel includes: a photodiode (PD); a transfer transistor (Tr1); a floating diffusion (FD); and an amplification transistor (Tr4). A compensating circuit has an amplifier (AP) receiving the output of the amplification transistor (Tr4), and a compensating transistor (M2) matched to the pixel amplification transistor (Tr4). Compensation is provided using negative feedback in the amplifier (AP).

Abstract: A solid-imaging device including an output unit of the FDA type and capable of generating accurate image signals and consuming less power is provided which includes: photoelectric conversion elements; a vertical CCD unit vertically transferring signal charges converted by the photoelectric conversion elements; a front-stage horizontal CCD unit horizontally transferring the signal charges, according to 4-phase drive signals having a 50% duty cycle; a rear-stage horizontal CCD unit disposed between the front-stage horizontal CCD unit and the output unit and horizontally transferring, according to 2-phase drive signals, the signal charges horizontally transferred from the front-stage horizontal CCD unit; a horizontal driver circuit generating the 4-phase drive signals; and a vertical/horizontal driver circuit generating the 2-phase drive signals, wherein the voltage amplitude of the 4-phase drive signals is smaller than the voltage amplitude of the 2-phase drive signals.

Abstract: It is an object of the present invention to provide a solid-state imaging device capable of prevent image defects from appearing in an outputted image while suppressing increase in a layout area with a simple circuit structure and is an MOS solid-state imaging device. The MOS solid-state imaging device includes pixels which outputs signals corresponding to intensity of incident light, vertical signal lines which are respectively provided to columns of the pixels and each of which transmits the signals from said pixels in a column direction, and column amplifier circuits that amplify the signals from the pixels and are respectively connected to the vertical signal lines, and each of the column amplifier circuits includes a voltage clipping circuit includes a voltage clipping circuit which limits a maximum output voltage of said column amplifier circuit.

Abstract: When a middle voltage within a withstanding voltage of a transistor from a first voltage VL as a low voltage of a source voltage and a second voltage VH as a high voltage of the source voltage is represented by VM and a third voltage within the withstanding voltage of a transistor from the second voltage VH or the first voltage VL is represented by VS or VD, a driving circuit includes: a first transistor whose source electrode is connected to a node of the middle voltage VM; a second transistor whose source electrode is connected to the drain electrode of the first transistor and whose drain electrode is connected to an output terminal; and a controller applying a signal having an amplitude of a difference between the voltages VL and VH to the gate electrode of the first transistor and applying a signal having an amplitude of a difference between the voltages VS and VH or between the voltages VL and VD to the gate electrode of the second transistor.

Abstract: A solid-state imaging apparatus is provided that including a plurality of amplifiers each one amplifying a signal from each one of a plurality of pixels. The amplifier including first and second field effect transistors, gate electrodes of which are connected to the same voltage node (VBL); and a first wiring connected between the voltage node and the gate electrodes of the first and second field effect transistors. The first and second field effect transistors are arranged in a direction perpendicular to a direction in which the plurality of amplifiers is arranged. Material of the first wiring has a resistivity smaller than that of the gate electrodes of the first and second field effect transistors.

Abstract: A solid-state imaging device includes: a CMOS image sensor including a plurality of pixels disposed in an array and each including a light reception element, a discharging unit, a charge accumulation section, a transfer unit, a reset unit, an amplification unit, and a selection unit; and a control unit adapted to generate a selection pulse for rendering the selection unit operative to control operation of the CMOS image sensor.

Abstract: A solid-state imaging device includes a pixel array section which includes a plurality of pixels arranged in a two-dimensional manner, and a vertical scanning circuit which successively performs selection and scanning for a plurality of rows of the pixel array section. Each of the pixels includes a photoelectric conversion element, a transfer transistor which transfers a signal charge of the photoelectric conversion element to a detecting section, a reset transistor which sets a voltage of the detecting section to a voltage of a power supply terminal, and an amplifying transistor which amplifies and reads a signal charge of the detecting section. A first voltage which is lower than a power supply voltage is applied to the detecting section, in a charge-storage period of the photoelectric conversion element.

Abstract: Disclosed herein is a solid-state image taking device including a pixel section and a scan driving section wherein on each pixel column included in the pixel area determined in advance to serve as a pixel column having the unit pixels laid out in the scan direction, the opto-electric conversion section and the electric-charge holding section are laid out alternately and repeatedly, and on each of the pixel columns in the pixel area determined in advance, two the electric-charge holding sections of two adjacent ones of the unit pixels are laid out disproportionately toward one side of the scan direction with respect to the optical-path limiting section or the opto-electric conversion section.