Abstract: A solid-state imaging apparatus includes: pixels arranged in a two-dimensional matrix; a signal line connected to the pixels; and the mechanical shutter for shielding the pixels. The pixel includes: a photoelectric conversion unit generating a signal by photoelectric conversion; a reset unit resetting a signal of the photoelectric conversion unit; and a selecting unit for switching between a selecting state and a non-selecting state. The reset unit terminates the reset operation at different timing for each row of the pixels, thereby starting the charge accumulation period in the photoelectric conversion unit. The mechanical shutter shields the photoelectric conversion unit, thereby terminating the charge accumulation period.

Abstract: A booster circuit includes: an output terminal; a reference voltage generating section that generates a boosting reference voltage; a charge pump section that boosts the reference voltage and outputs the boosted reference voltage from the output terminal; and an output-terminal voltage holding section that holds the output terminal at a voltage of a high level at a standby time. The charge pump section includes an input node, at least one boosting node, at least one reference node, at least one boosting capacitor, and a plurality of switching transistors that are provided between the input node and the at least one boosting node, between a boosting node at a last stage and the output terminal, between the input node and the reference node, and between a reference potential and a reference node, and are switched on or off by a switch signal.

Abstract: In an image pickup device with A/D converters at each column signal line, improvements in the A/D conversion speed and accuracy in image sensors having A/D converters are achieved. In an image pickup device wherein sensing elements are arranged in a matrix and A/D converters are arranged for each column signal line, the A/D converter first retains in its memory unit as an initial value an electric signal corresponding to the signal of the sensing element which is an analog signal, then initiates charge or discharge of the memory unit at a rate corresponding to the size of an input fixed signal, measures the time period from either the charge start time or the discharge start time until the memory unit electric signal becomes equal to the reference signal, and then recognizes the measured time period as a digital value.

Abstract: A solid-state image pickup device includes a plurality of light sensing sections; a plurality of vertical transfer registers configured to transfer signal charge of the plurality of light sensing sections in the vertical direction; a horizontal transfer register configured to transfer the signal charge in the horizontal direction; a floating gate amplifier that is placed at an output side of the horizontal transfer register; a floating diffusion amplifier that is placed in a horizontal transfer register which is provided at a stage subsequent to the floating gate amplifier; and an overflow drain mechanism that is placed in the horizontal transfer register between the floating gate amplifier and the floating diffusion amplifier.

Abstract: A device for controlling an image sensor including at least one photosensitive cell including a photodiode capable of discharging into a sense node via a first MOS transistor, the sense node being connected to the gate of a second MOS transistor having its source connected to a processing system. The device includes a bias circuit capable of increasing the voltage of the source during the discharge of the photodiode into the sense node.

Abstract: An imaging module includes a matrix of detector elements formed on a single semiconductor substrate and configured to output electrical signals in response to optical radiation that is incident on the detector elements. A filter layer is disposed over the detector elements and includes multiple filter zones overlying different, respective, convex regions of the matrix and having different, respective passbands.

Abstract: An apparatus for acquiring an i-bit digital code by a first stage AD conversion and a j-bit digital code by a second stage AD conversion includes a comparing unit which compares a reference signal and an analog signal in the first stage AD conversion; and an amplifying unit for outputting an amplified residual signal acquired by amplifying a difference between the analog signal and an analog signal corresponding to the i-bit digital code. The comparing unit compares the amplified residual signal and the reference signal in the second stage AD conversion.

Abstract: A DA converter includes: an analog signal output section that generates an output current and a non-output current according to a value of a digital input signal in response to a gain control signal supplied to adjust gain, and that outputs an analog signal produced by current-voltage conversion of the output current and causes the non-output current to flow to a reference potential; a gain control signal generating section that generates a gain current and a non-select current according to a value of a digital gain control signal, and that generates the gain control signal by current-voltage conversion of the gain current and supplies the gain control signal to the analog signal output section; and a correction current generating section that generates, based on the non-select current of the gain control signal generating section, a correction current that complements an amount of current fluctuation due to changes in gain settings in the gain control signal generating section, and that causes the correction

Abstract: An imaging device includes pixels arranged in a two-dimensional form and each having a photoelectric conversion part converting light into an electric signal, a plurality of vertical signal lines coupled, in a column direction, to the pixels arranged in the column direction and receiving the electric signal read from each of the pixels, a first constant current generator provided on each of the vertical signal lines, a column amplifier having a second constant current generator and amplifying the electric signal read to the vertical signal line, and a constant voltage generator provided on each of the vertical signal lines and being coupled to a first contact of the first constant current generator and a second contact of the second constant current generator included in the column amplifier.

Abstract: The invention relates to an image sensor for electronic cameras, having a plurality of light-sensitive pixels for the generation of at least one signal proportional to exposure, wherein the pixels are coupled to a read-out circuit having at least one amplifier and configured to amplify the at least one signal of a respective pixel with different amplification factors to generate differently amplified signals for the at least one signal of a respective pixel, wherein the read-out circuit has at least one output to output at least some of the differently amplified signals as output signals.

Abstract: A solid-state imaging device includes a unit cell, a first power supply which supplies a drain voltage to the amplifying transistor, and a second power supply which supplies a drain voltage to the reset transistor. The unit cell includes a photodiode which accumulates a signal charge obtained by photoelectric conversion of incident light, an amplifying transistor which has a control electrode capacitively coupled to a vertical signal line, and which amplifies the signal charge outputted from the photodiode and outputs the amplified signal charge to the vertical signal line, and a reset transistor which resets a voltage at the control electrode of the amplifying transistor.

Abstract: A comparator includes: a signal input terminal; a capacitor connected between the signal input terminal and a signal line; and a switching transistor for calibration which is turned on/off to periodically charge the capacitor with a voltage difference between a signal voltage and an operating point of the comparator, wherein an on-resistance of the switching transistor which is turned on when performing the charging is dynamically controlled by a control pulse having a limited amplitude.

Abstract: A CMOS image sensor includes an image pixel array, a dark pixel array, data bit liens, reference bit lines, a driver, comparators, and analog-to-digital converter (“ADC”) circuits. The image pixel array generates analog image signals in response to incident light. The dark pixel array generates analog black reference signals for analog black level calibration of the analog image signals. In one embodiment, the data bit lines each coupled to a different column of image pixels of the image pixel array and the reference bit lines each coupled to a different column of black reference pixels within the dark pixel array. The driver is coupled to the reference bit lines to drive an analog black reference signal. The comparators each couple to one of the data bit lines and each coupled to an output of the driver and offset the analog image signals with the analog black reference signals in an analog domain. The ADC circuits each coupled to an output of a comparator.

Abstract: A physical quantity distribution detecting apparatus includes a sensor array in which a plurality of unit sensors for sensing physical quantity are two-dimensionally arranged in a matrix; and an analog-to-digital conversion unit that includes a plurality of comparators for comparing an analog signal read from the unit sensor with a reference signal, the analog-to-digital conversion unit converting a digital signal by measuring a period of time or measuring a signal corresponding to the period of time of each comparison output of the plurality of comparators. Each of the plurality of comparators includes at least one capacitor element connected between a signal line and a constant-voltage line.

Abstract: A solid-state image pickup device includes a plurality of pixels arranged in rows and columns on a semiconductor substrate. A photoelectric converter of each pixel includes a photoelectric conversion film between a pixel electrode and a transparent electrode. An amplifier transistor has a gate connected to the pixel electrode, and a reset transistor has a source connected to the pixel electrode. The solid-state image pickup device performs: hard reset operation in which a first reset voltage is applied to the drain of the reset transistor, and then the reset transistor is turned on; and soft reset operation in which a second reset voltage which has a higher level than the first reset voltage is applied to the drain of the reset transistor, and then a pulse in a negative direction is applied to the source of the reset transistor via a capacitor.

Abstract: An electronic device may have an image sensor for capturing digital image data of a scene. The image sensor may have an array of image sensor pixels. The image sensor pixels may have photosensitive elements for capturing image data signals. The image data signal from each photosensitive element may be conveyed to an output line associated with a column of the array using a source-follower transistor. The source-follower transistors may be provided with a current bias using current source coupled to each output line. The current source may include a configurable current source transistor that has multiple branches that can be selectively switched into use to adjust transconductance and drain saturation voltage characteristics for the current source. Gate structures in the configurable current source transistor may be supplied with a reference voltage from an adjustable voltage reference circuit.

Abstract: An image pickup device may include an image pickup unit in which unit pixels having photoelectric conversion elements are arranged, the unit pixels outputting pixel signals, a reference signal generation unit, a comparison unit that includes a differential amplifier unit and a reset unit, the differential amplifier unit comparing a voltage of the first input terminal to a voltage of the second input terminal, a measurement unit that measures a comparison time of the comparison unit from a comparison start to a comparison end, and a change unit that changes the voltage of the first input terminal so that a voltage difference between the first input terminal and the second input terminal is set to a voltage at which a comparison operation by the comparison unit is ensured after a reset operation by the reset unit.

Abstract: An imaging apparatus includes a pixel unit, an amplifying transistor, and a control unit. The pixel unit includes a first photoelectric conversion unit generating a first charge based on incident light of a first color, a second photoelectric conversion unit generating a second charge based on incident light of the first color, and a third photoelectric conversion unit generating a third charge based on incident light of a second color. The amplifying transistor is provided in common to the first to third photoelectric conversion units, and outputs a signal based on the first, second, and third charges generated by the first, second, and third photoelectric conversion units, respectively. The control unit sets the pixel unit to a selected state or a non-selected state according to an electric potential of a control terminal of the amplifying transistor.

Abstract: A solid-state imaging device and a camera system are disclosed. The solid-state imaging device includes a pixel unit and a pixel signal readout circuit. The pixel signal readout circuit includes a plurality of comparators disposed to correspond to a pixel column array, and a plurality of counters. Each counter includes a first amplifier, a second amplifier, and a mirror circuit to from a current mirror in parallel with the second amplifier. The first amplifier includes differential transistors, initializing switches connected between gates and collectors of the differential transistors, and first and second capacitors connected to each of the gates of the differential transistors. The second amplifier includes an initializing switch and a third capacitor. The mirror circuit includes a gate input transistor whose gate is inputted with a voltage sampled by the first amplifier or a voltage sampled by the second amplifier.

Abstract: An image sensor may include an image pixel array. The image sensor may be provided with automatic conversion gain selection on a pixel-by-pixel basis to produce a high-dynamic-range image. Each image pixel may include a capacitor and a conversion gain transistor coupled in series between a power supply line and a floating diffusion node. The conversion gain transistor may be coupled to a control line through a gating transistor. The gating transistor may have a gate connected to a row select line. The image pixel may have an output line that is coupled to a column amplifier and a comparator. The column amplifier may generate a difference voltage based on reset and image signals. The comparator may compare the difference voltage with a predetermined threshold to determine whether to place the selected pixel in a high or low conversion gain mode.

Abstract: The objective of this invention is to provide a solid-state imaging device and drive method with which sampling before the output values from pixels have reached a constant value can be avoided.

Abstract: By providing dummy pixels separately from effective pixels, the total number of pixel rows is equalized with the number of horizontal sync signals included in one frame interval (which is called an “HD number”). A period during which a reset signal for an electronic shuttering operation is being supplied to an arbitrary pixel row overlaps with a period during which another pixel row is selected to perform a readout operation thereon. Thus, it is possible to suppress a variation in reset potential among effective pixels.

Abstract: An image sensor includes a pixel array having vertical signal lines, each interconnected to one of columns of the pixel array, and a column processor including a unit readout circuit provided for each of sets of a predetermined number of columns. The unit readout circuit includes input switches, each connected to a corresponding one of the vertical signal lines and being sequentially turned on and off, an input capacitor having one end commonly connected to the input switches, a reference switch for selectively providing a reference voltage to the input capacitor, an operational amplifier connected to the other end of the input capacitor, a reset switch for selectively providing a short-circuit between input and output ends of the operational amplifier, and a feedback circuit provided for each of the columns and including a feedback switch and a feedback capacitor connected in series between the two ends of the operational amplifier.

Abstract: A signal chain for an image sensor is disclosed. The signal chain includes photo sensing elements, pixel readout circuits, and an amplifier. Each pixel readout circuit receives a charge-induced signal and a reset signal from one of the photo sensing elements. The readout circuit computes a difference signal between the charge-induced signal and said reset signal. The difference signal is measured with respect to a reference signal. The amplifier is coupled to the pixel readout circuits, and configured to supply the reference signal during computation of the difference signal. Further, the amplifier amplifies the difference signal when the computation is done.

Abstract: The present invention relates to an imaging device, a drive control method, and a program configured to be capable of making sensitivity ratios constant and improving a S/N ratio. When a storage period of pixels (G pixels) with a green filter as a reference does not exceed a predetermined threshold value, an adjustment of the sensitivity ratio by gains by color is performed. When the storage period of the pixels with a green filter is larger than the predetermined threshold value, the storage periods of the pixels with a red filter (R pixels) and the pixels with a blue filter (B pixels) are calculated from the set sensitivity ratios, and if the calculated values do not exceed a maximum setting value, the adjustment of the sensitivity ratios by the storage periods by color is performed. In contrast, if the calculated storage period is larger than the maximum setting value, the adjustment of the sensitivity ratio is performed by combining the storage period by color and the gains by color.

Abstract: A sensor array, including: a plurality of pixels; first and second video lines; and a plurality of intermediate circuits. Each intermediate circuit is electrically connected to a respective pixel from the plurality of pixels and electrically connected to both the first and second video lines. A method for modifying resolution of a sensor array, the array including first and second video lines, a plurality of pixels, and a plurality of intermediate circuits; and, including: electrically connecting each intermediate circuit to a respective pixel and to the first and second video lines; for a first mode, transmitting a signal from a pixel in the plurality of pixels to the first video line via a respective intermediate circuit from the plurality of intermediate circuits; and for a second mode, transmitting a signal from the pixel to the second video line via the respective intermediate circuit from the plurality of intermediate circuits.

Abstract: A solid state imaging device includes shared amplification transistors and reset transistors arranged, for example, in a checkered pattern so that centroid of photo diodes 2 of the same colors are arranged substantially at an identical pitch. As a result, the resolution of the solid state imaging device can be maintained without considering irregularities of the incident light for each unit pixel.

Abstract: A solid-state imaging apparatus includes a reference signal generating circuit for supplying, commonly to the plurality of A/D conversion circuits, at least two reference signals of which signal levels change toward different directions of electric potential, and the A/D conversion circuit includes an amplifier; an input capacitor having one terminal receiving the analog signal and the reference signal supplied from the reference signal generating circuit, and the other terminal connected to one input terminal of the amplifier; a feedback capacitor connected between the one input terminal and an output terminal of the amplifier; a comparator for comparing, with a comparing level, an output from the output terminal of the amplifier; and a connection capacitor having one terminal connected to the output terminal of the amplifier, and the other terminal connected to one input terminal of the comparator.

Abstract: An image sensor includes a horizontal shift register electrically connected to a pixel array for receiving charge packets from the pixel array. A non-destructive sense node is connected to an output of the horizontal shift register. A charge directing switch is electrically connected to the non-destructive sense node. The charge directing switch includes two outputs. A charge multiplying horizontal shift register is electrically connected to one output of the charge directing switch. A discharging element is connected to the other output of the charge directing switch.

Abstract: An image sensor includes a horizontal shift register electrically connected to a pixel array for receiving charge packets from the pixel array. A non-destructive sense node is connected to an output of the horizontal shift register. A charge directing switch is electrically connected to the non-destructive sense node. The charge directing switch includes two outputs. A charge multiplying horizontal shift register is electrically connected to one output of the charge directing switch. A bypass horizontal shift register or an amplifier can be connected to the other output of the charge directing switch.

Abstract: An image sensor includes a horizontal shift register electrically connected to a pixel array for receiving charge packets from the pixel array. A non-destructive sense node is connected to an output of the horizontal shift register. A charge directing switch is electrically connected to the non-destructive sense node. The charge directing switch includes two outputs. A charge multiplying horizontal shift register is electrically connected to one output of the charge directing switch. A bypass horizontal shift register or an amplifier can be connected to the other output of the charge directing switch.

Abstract: To provide a floating diffusion (FD) for converting accumulated electric charges to a voltage signal and a transistor in which a gate terminal is connected to the FD and a source terminal is connected to an output signal line. When the FD is reset, a power supply voltage is applied to the FD for a predetermined period to set a voltage of the output signal line as a first voltage, and thereafter, the set voltage of the output signal line is set as a second voltage higher than the first voltage.

Abstract: An image sensing apparatus comprises: a pixel array; a selection unit which selects a readout region in the pixel array; and a readout unit which reads out a signal from the readout region, wherein in thinning-out readout, the readout unit reads out signals from a first readout region corresponding to the whole pixel array at a first pixel density in a first frame period and reads out signals from a second readout region corresponding to a part of the pixel array at a second pixel density in a second frame period, the second pixel density being higher than the first pixel density, and in thinning-out readout, the selection unit causes pixels in the first readout region to perform a charge accumulation operation for a first accumulation period and causes pixels in the second readout region to perform the charge accumulation operation for a second accumulation period.

Abstract: An image-pickup apparatus including a detector comprising a detecting unit and a reading circuit, the detecting unit including pixels, each of which including a conversion element, the reading circuit which includes a connecting unit that is electrically connected to a signal wire transferring an electric signal and that electrically connects the signal wire to a node, and which performs a reading operation to output the electric signal from the pixel. A control unit controls an operation of the reading circuit, and a sensing unit senses the end of radiation irradiation based on an output of the reading circuit, which is acquired during the period of an accumulation operation of the detector. The control unit starts establishing the electrical connection between the signal wire and the node through the connecting unit based on the sensed irradiation end, and retains the electrical connection until the start of the reading operation.

Abstract: An image sensor for electronic cameras includes a plurality of light sensitive pixels arranged in rows and columns for generating exposure proportional signals, wherein the pixels of a respective column are coupled to at least one respective column read-out circuit via at least one respective column line, and wherein the respective column read-out circuit includes at least two column amplifiers which are connected in parallel, and includes a control device for controlling a read-out process of an image, wherein the read-out process for the respective pixel includes at least one read-out cycle. The gain factor of at least one of the two column amplifiers of the respective column read-out circuit is adjustable.

Abstract: In accordance with an exemplary embodiment of the present invention, a method is provided to form an image using an active pixel sensor imager (108). The method includes placing an active pixel sensor (202) in electrical contact with a column readout line (204), placing a sample-and-hold capacitor into electrical contact with the column readout line, and placing the sample-and-hold capacitor (314 or 320) in electrical contact with an input capacitor (324 or 334) on an amplifier (222). All of the input capacitor (324 or 334), the sample-and-hold capacitor (314 or 320), and the active pixel sensor (202) are in electrical contact for an overlapping period of time. A differential output (228) from the amplifier (222) is digitized, and used to form an image.

Abstract: In order to provide a photoelectric conversion apparatus, which is an apparatus excellent in reading speed, high S/N, high tone level, and low cost, the photoelectric conversion apparatus has a photoelectric conversion circuit section comprising a plurality of photoelectric conversion elements, switching elements, matrix signal wires, and gate drive wires arranged on a same substrate in order to output parallel signals, a driving circuit section for applying a driving signal to the gate drive wire, and a reading circuit section for converting the parallel signals transferred through the matrix signal wires to serial signals to output them, wherein the reading circuit section comprises at least one analog operational amplifier connected with each of the matrix signal wires, transfer switches for transferring output signals from the respective matrix signal wires, output through each amplifier, reading capacitors, and reading switches for successively reading the signals out of the reading capacitors in the for

Abstract: A solid-state image pickup device comprises for each pixel a photoelectric converter PD, an input terminal FD of a signal amplifier and a transfer switch TX for transferring an optical signal from the photoelectric converter to the input terminal. The device additionally comprises means for resetting the photoelectric converter by opening the transfer switch TX under a condition of holding the voltage of the input terminal FD to a fixed high level before storing the optical signal in the photoelectric converter PD. With this arrangement, any residual electric charge in the photoelectric converter can be eliminated without paying the cost of reducing the manufacturing yield and degrading the chip performance.

Abstract: A video camera (100) for transmitting image data from an image pickup device to an image processing device with reduced electric power includes a C-MOS image sensor (110) that reads captured image data on the basis of a reference clock CLK0, a frequency multiplying circuit (121) that generates a high-speed clock CLK1, a rearranging circuit (122) that transposes the captured image data into bit data sequences, a data output section (120) that causes each data transmitter (124) to sequentially transmit a corresponding bit data sequence to the outside on the basis of the high-speed clock CLK1, and a system controller (400) that drives data transmitters (124), the number of which is proportional to a transmission speed.

Abstract: An image sensing device comprises a readout unit, an output amplifier, and a horizontal scanning unit, wherein the horizontal scanning unit scans a plurality of column signal holding circuits in a plurality of holding blocks in the readout unit in a direction along a row, in each holding block, a first operation in which the signal held in a first holding unit is transferred to a second holding unit via a transfer switch is performed, and subsequently, a second operation in which the signal held in the second holding unit is transferred to the output amplifier, and a third operation in which a signal output from a pixel is read out to the first holding unit are performed in parallel, and the second operation and the first operation are performed in parallel between different holding blocks in the plurality of holding blocks.

Abstract: It is a principle object of the present invention to reduce a voltage drop of a common power supply wiring in a plurality of amplification circuits to suppress crosstalk generated in other signal output lines.

Abstract: A solid-state imaging apparatus has a plurality of pixels arranged linearly along columns of N, a plurality of clamping capacitors each arranged corresponding to each column of the pixels, for accumulating the charge amplified by an amplifying unit in the pixel, and a common node arranged corresponding to each set including the clamping capacitors of L (L is equal to or larger than 2, and a divisor of N), and connectable to each set including the clamping capacitors of L. A plurality of pixel selection switches are connected between the clamping capacitor and the common node, and a clamping unit clamps the common nodes to a reference potential. In addition, a sampling and holding circuit connects to the common nodes through the clamping unit, and samples and holds a charge corresponding to a charge of the common node.

Abstract: A photoelectric conversion apparatus comprises: a plurality of pixels; a signal line; a holding block; an output unit; and a control unit, wherein the control unit selectively operates the holding block in a first mode or a second mode, the first mode being a mode in which a first signal is held in a first holding unit and then transferred from the first holding unit to a second holding unit via a first impedance conversion unit, and in which a second signal is held in a third holding unit and then transferred from the third holding unit to a fourth holding unit via a second impedance conversion unit, and the second mode being a mode in which the first signal is transferred to the second holding unit via the first impedance conversion unit and the second signal is transferred to the fourth holding unit via the first impedance conversion unit.

Abstract: A photoelectric conversion device includes a pixel unit including a photoelectric converter, an amplifier arranged on the output side of the pixel unit, an output unit arranged on the output side of the amplifier, a first restriction circuit, and a second restriction circuit. The first restriction circuit restricts, between the amplifier and the output unit, a noise level read out from the pixel unit via the amplifier in reading out the noise level from the pixel unit. The second restriction circuit restricts, between the photoelectric converter and the amplifier, a noise level to be provided to the amplifier in reading out the noise level from the pixel unit.

Abstract: An image sensor, in particular a CMOS image sensor, for electronic cameras having a plurality of light-sensitive pixels which are arranged in rows and columns and whose signals are conducted via a plurality of column lines to column amplifiers, with a column amplifier being associated with each column line. At least one further column amplifier which is simultaneously also associated with at least one other column line is associated with the respective column line. A switching device switches the respective column line selectively to one of the associated column amplifiers.

Abstract: A solid-state imaging device and a camera system are disclosed. The solid-state imaging device includes a pixel unit and a pixel signal readout circuit. The pixel signal readout circuit includes a plurality of comparators disposed to correspond to a pixel column array, and a plurality of counters. Each counter includes a first amplifier, a second amplifier, and a mirror circuit to from a current mirror in parallel with the second amplifier. The first amplifier includes differential transistors, initializing switches connected between gates and collectors of the differential transistors, and first and second capacitors connected to each of the gates of the differential transistors. The second amplifier includes an initializing switch and a third capacitor. The mirror circuit includes a gate input transistor whose gate is inputted with a voltage sampled by the first amplifier or a voltage sampled by the second amplifier.

Abstract: A CMOS image sensor has a pixel array provided with a plurality of unit pixels arranged in a matrix shape of rows and columns. Each of the unit pixel includes a photocharge generation means for generating photocharges by absorbing an external light; and a sensing node for receiving the photocharges transferred from the photocharge generation means, wherein the sensing node of the unit pixel in a previous scan line is shared with a sensing node of a unit pixel in a current scan line in response to a line select signal of the current line.

Abstract: A high dynamic range solid-state image pickup device is provided with a plurality of unit cells, which convert light into signal charges and accumulate the signal charges. The unit cells are arranged by rows and columns for outputting a signal voltage corresponding to the signal charges. A selector and a read transistor set an accumulation time period for accumulating the signal charges in the unit cells to a first period and a second period different from each other. The row selector and a vertical selection transistor select a row. Sampling capacitors (210a, 210b) are connected to the unit cell of each column. A pulse generator and sampling transistors select an arbitrary sampling capacitor from the sampling capacitors. The pulse generator and the sampling transistors perform selection so as to accumulate the signal voltage corresponding to the signal charges accumulated during the first period and the second period in the sampling capacitors, respectively.

Abstract: A readout system with enhanced dynamic range for an image sensor is constructed with a pixel circuit and a readout circuit. The pixel circuit includes at least a first amplifier with a first gain and a second amplifier with a second gain for amplifying signals from the image sensor. The readout circuit includes at least a first readout sub-circuit and a second readout sub-circuit for corresponding reading output of the first amplifier and output of the second amplifier respectively.

Abstract: A binning circuit and method for an image sensor is disclosed. A column amplifier (CA) is first reset, and thus generates a CA reset signal. A capacitor and a switch network are coupled between an output of the image sensor and an input of the column amplifier. A correlated double sampling (CDS) circuit controllably receives the output of the column amplifier. The switch network is controlled in a way such that an image signal of a first group of the image sensor is transmitted and stored in the CDS circuit, and an image signal of a second group is then added to the stored image signal of the first group.