Abstract: In one example, an apparatus includes an array of pixel cells and a peripheral circuit. Each pixel cell of the array of pixel cells includes: a memory to store pixel-level programming data and measurement data, and light measurement circuits configured to, based on the pixel-level programming data from the control memory, perform a light measurement operation to generate the measurement data, and to store the measurement data at the data memory. The peripheral circuit is configured to: receive a pixel array programming map including pixel-level programming data targeted at each pixel cell; extract the pixel-level programming data from the pixel array programming map; and transmit the pixel-level programming data to each pixel cell of the array of pixel cells for storage at the memory of the each pixel cell and to individually control the light measurement operation and a generation of the measurement data at the each pixel cell.

Abstract: Organic light-emitting display substrates and methods of preparing the same, and organic light-emitting display apparatuses are provided. An organic light-emitting display substrate includes a display area and opening areas in the display area.

Abstract: In some examples, a sensor apparatus comprises: a pixel cell configured to generate a voltages, the pixel cell including a photodiode configured to generate charge in response to incoming light, and a charge storage device to convert the charge to a voltage; an integrated circuit configured to: determine a first captured voltage converted by the charge storage device during a first time period; compare the first captured voltage to a threshold voltage value; and in response to determining that the first captured voltage meets or exceeds the threshold voltage value: determine first time data corresponding to the first time period; and prevent the charge storage device from further generating a charge; and an analog-to-digital converter (ADC) configured to generate a digital pixel value based on the first captured voltage, and a memory to store the digital pixel value and the first time data.

Abstract: Provided is an image sensor including a color separating lens array. The image sensor includes a sensor substrate including a plurality of first photosensitive cells and a plurality of second photosensitive cells configured to sense light, and a color separating lens array including a plurality of first regions respectively corresponding to the plurality of first photosensitive cells and each including a first fine structure, and a plurality of second regions respectively corresponding to the plurality of second photosensitive cells and each including a second fine structure that is different from the first fine structure, wherein, among incident light incident on the color separating lens array, light of a first wavelength and light of a second wavelength are branched into different directions and focused on the first photosensitive cells and the second photosensitive cells.

Abstract: Higher-speed image recognition processing can be implemented. A light receiving device according to an embodiment includes: a plurality of first filters (130) each transmitting an edge component in a predetermined direction in an incident image; a plurality of second filters (150) each transmitting light of a predetermined wavelength band in incident light; and a plurality of photoelectric conversion elements (PD) each photoelectrically converting light transmitted through one of the plurality of convolution filters and one of the plurality of color filters.

Abstract: A focus detection device includes: an imaging unit having a first and second pixel each of which receives light transmitted through an optical system and outputs signal used for focus detection, and a third pixel which receives light transmitted through the optical system and outputs signal used for image generation; an input unit to which information regarding the optical system is input; a selection unit that selects one of the first and second pixel based on the information to the input unit; a readout unit that reads out the signal from one of the first and second pixel based on a selection result at a timing different from reading out the signal from the third pixel to be read out; and a focus detection unit that performs the focus detection based on at least one of the signals of the first and second pixel read out by the readout unit.

Abstract: An image sensor includes a plurality of pixels. Each pixel includes a photoelectric conversion portion, a reset gate for controlling removal of a charge accumulated in the photoelectric conversion portion, a charge accumulation portion, an accumulation gate for controlling a transfer of the charge from the photoelectric conversion portion to the charge accumulation portion, and a readout gate for controlling readout of the charge from the charge accumulation portion. The reset gate removes the charge generated in the photoelectric conversion portion by excitation light. The accumulation gate transfers the charge generated in the photoelectric conversion portion by fluorescence to the charge accumulation portion. The readout gate performs control for reading out the charge after the charge transfer is performed n times. The number n of the charge transfers is set for each pixel.

Abstract: A photoelectric conversion apparatus includes a first substrate including a pixel array including a plurality of pixels, a second substrate layered on the first substrate and including an AD conversion portion including a plurality of AD conversion circuits configured to convert a signal output from the first substrate into a digital signal, wherein the second substrate further includes a plurality of signal processing units including a first signal processing unit and a second signal processing unit both configured to perform machine learning processing, wherein each of a plurality of sets includes a plurality of AD conversion circuits that differ between the plurality of sets, wherein the first signal processing unit is arranged to correspond to one of the plurality of sets, and wherein the second signal processing unit is arranged to correspond to another one of the plurality of sets.

Abstract: A photoelectric conversion device including a pixel configured to output a signal in response to incidence of a photon includes a first measurement unit configured to measure the signal output from the pixel, a second measurement unit configured to measure time until the signal measured by the first measurement unit reaches a first threshold, a first storage unit configured to store, as a first time, a result of the measurement by the second measurement unit at a first time point, a comparison unit configured to compare the first time stored in the first storage unit and a second time measured by the second measurement unit at a second time point later than the first time point, and an output unit configured to output a signal corresponding to a result of the comparison by the comparison unit.

Abstract: An image sensor includes a pixel array including a plurality of pixels arranged in a first direction and a second direction. Each pixel of the plurality of pixels includes a plurality of photodiodes disposed adjacent to one another in at least one of the first direction and the second direction. The image sensor further includes a control logic configured to generate image data by obtaining pixel signals from the plurality of pixels, and read a pixel voltage corresponding to charges generated by two or more of the plurality of photodiodes included in one of the plurality of pixels, at substantially the same time.

Abstract: An image sensor comprises: a plurality of microlenses; and a pixel region including, with respect to each of the plurality of microlenses, a plurality of first sensitivity regions formed at first depth from a light incident surface, a plurality of second sensitivity regions formed at second depth which is deeper than the first depth, and a plurality of connection portions that electrically connect the plurality of first regions and the plurality of second regions in different combinations.

Abstract: A Lens and Camera Testing Method, Apparatus, and System have been disclosed. In one implementation a lens and camera combination is mounted on a gimbal and is tilted at a remote polygon target.

Abstract: Provided is an image sensing apparatus including an image sensor including a pixel array configured to output a raw image having a Bayer pattern, and an analog end configured to perform an analog binning process on groups of pixels of same colors included in same columns of each of a plurality of sub-kernels corresponding to a first green pixel, a red pixel, a blue pixel, and a second green pixel, and output median values for different colors, and a digital signal processor configured to perform a digital binning process on the median values for the different colors included in different columns of each of the plurality of sub-kernels, and output a binned image.

Abstract: Provided is an image sensor including a pixel array formed by arranging pixels, which generate an electrical signal in response to light; a memory for storing a register value of the image sensor; and a sensor controller for configuring the register value, wherein the register value includes information for defining a region to be processed in the pixel array, and when a change request for changing at least one of a position and a size of the region to be processed is received, the sensor controller provides a register modification command for adjusting the register value so as to correspond to the change request to the image sensor or the memory.

Abstract: A chip scale package structure is provided. The chip scale package structure includes an image sensor chip and a chip. The image sensor chip includes a first redistribution layer including a conductive wire and a conductive pad formed on the conductive wire, wherein the conductive pad is exposed from the surface of the first redistribution layer. The chip includes a plurality of through silicon via (TSV) and a second redistribution layer including a conductive wire and a conductive pad formed on the conductive wire, wherein the conductive pad is exposed from the surface of the second redistribution layer. The area of the chip is smaller than that of the image sensor chip. The second redistribution layer of the chip bonds to the first redistribution layer of the image sensor chip.

Abstract: To shorten time required for AD conversion when a solid-state imaging element that detects presence or absence of an address event further captures image data. In a detection block, a first pixel that generates a first analog signal by photoelectric conversion and a second pixel that generates a second analog signal by photoelectric conversion are arrayed. A first analog-digital converter converts the first analog signal into a digital signal on the basis of whether or not a change amount of an incident light amount of the detection block exceeds a predetermined threshold. A second analog-digital converter converts the second analog signal into a digital signal on the basis of whether or not the change amount exceeds the threshold.

Abstract: An image sensor comprises: a plurality of microlenses; and a pixel region including, with respect to each of the plurality of microlenses, a plurality of first sensitivity regions formed at first depth from a light incident surface, a plurality of second sensitivity regions formed at second depth which is deeper than the first depth, and a plurality of connection portions that electrically connect the plurality of first regions and the plurality of second regions in different combinations.

Abstract: An image processing apparatus includes a measurement area setting unit that sets a measurement area in an input image, a small image setting unit that sets a small image in the input image based on the measurement area, a first estimation unit that estimates a flow distribution of a target in the small image, and a second estimation unit that estimates the number of targets to pass through the measurement area based on the flow distribution in the small image.

Abstract: Provided is an imaging device that includes a plurality of pixels, a memory unit, a memory control unit, and a bus interface. Each of the memory unit, the plurality of pixels, the memory control unit, and the bus interface is in any one of a plurality of semiconductor substrates. The plurality of pixels performs photoelectric conversion. The memory unit stores image data generated on the basis of a result of the photoelectric conversion. The memory control unit performs a read operation on the basis of first internal address information. The read operation is for reading, from the memory unit, image data corresponding to the first internal address information among pieces of the image data. The bus interface performs communication for first address information with an external device, supplies the memory control unit with the first internal address information, and transmits the read image data to the external device.

Abstract: Image plane phase difference pixels that can handle incident light at two or more chief ray angles are realized. A solid-state imaging device includes a pixel, the pixel including a microlens that condenses light from a subject, a photoelectric conversion unit that receives the subject light condensed by the microlens to generate an electrical signal according to an amount of received light, and a light shielding portion provided between the photoelectric conversion unit and the microlens. The light shielding portion includes an edge portion formed across over a light receiving surface of the photoelectric conversion unit, and the edge portion includes a first edge portion and a second edge portion at positions different from each other both in a first direction corresponding to an up and down direction of an output image and a second direction corresponding to a left and right direction of the output image.

Abstract: The present disclosure relates to noninvasive methods, devices, and systems for measuring various blood constituents or analytes, such as glucose. In an embodiment, a light source comprises LEDs and super-luminescent LEDs. The light source emits light at at least wavelengths of about 1610 nm, about 1640 nm, and about 1665 nm. In an embodiment, the detector comprises a plurality of photodetectors arranged in a special geometry comprising one of a substantially linear substantially equal spaced geometry, a substantially linear substantially non-equal spaced geometry, and a substantially grid geometry.

Abstract: A device includes a first lens. The device also includes a first polarized image sensor coupled with the first lens and configured to capture, from a first perspective, a first set of image data in a plurality of polarization orientations. The device also includes a second lens disposed apart from the first lens. The device further includes a second polarized image sensor coupled with the second lens and configured to capture, from a second perspective different from the first perspective, a second set of image data in the plurality of polarization orientations.

Abstract: An image sensor includes: a photoelectric conversion unit that photoelectrically converts incident light and generates a charge; and an A/D conversion unit that converts the analog signal generated due to charge generated by the photoelectric conversion unit into a digital signal, wherein: the A/D conversion unit includes a comparison unit that compares the analog signal with a reference signal and a first circuit layer including a first capacitor for generating the reference signal and a second circuit layer laminated to the first circuit layer and including with a second capacitor for generating the reference signal.

Abstract: A pixel circuit for a ultra-low power image sensor, including: an integration node, on which a photodiode current is integrated, a comparator arranged to compare a voltage at the integration node with a reference voltage, a n+1 bits digital memory, a writing pulse signal generator arranged to generate a writing pulse signal, on the basis of the comparator output voltage and on the voltage at a memory node, the start of the pulse triggering the writing of the digital word in the n-bits digital memory part. The comparator includes a switch in series with a current source and arranged to be commanded by the voltage at the memory node so that the switch is open at the end of the pulse, so as to drastically limit the consumption of static power of the pixel circuit during the integration phase.

Abstract: An electronic device includes a test voltage generation circuit to generate a test voltage as a function of a regulator voltage, and a switching circuit to receive the test voltage and an image pixel output signal, and to pass the test voltage as output when in a test mode. A comparison circuit receives the output from the switching circuit and an analog to digital conversion signal, and asserts a counter reset signal when the output from the switching circuit and the analog to digital conversion signal are equal in voltage. A counter begins counting at a beginning of each test cycle within the test mode, stops counting upon assertion of the counter rest signal, and outputs its count upon stopping counting. The count is proportional to the test voltage when in the test mode.

Abstract: An AD conversion circuit with reduced comparator noise is disclosed. In one example, a solid-state image capturing device includes at least three stacked substrates, in which for each pixel block, a first substrate includes a photoelectric conversion unit that generates electric charges according to incident light, a transfer transistor, and a floating diffusion, a second substrate includes one comparator that compares a signal according to a voltage of the floating diffusion with a reference signal, a third substrate includes a code generation circuit that generates a code of a counter, a storage unit that stores the code, and a timing control circuit that controls a timing of storing the code in the storage unit, and the solid-state image capturing device further includes a pixel array in which a plurality of the pixel blocks is arranged.

Abstract: Row-by-row pixel read-out is executed concurrently within respective clusters of pixels of a pixel array, alternating the between descending and ascending progressions in the intra-cluster row readout sequence to reduce temporal skew between neighboring pixel rows in adjacent clusters.

Abstract: A time-of-flight device comprises a pixel array including an array of pixel circuits, wherein a column of the array includes: a first pixel circuit including a first photodiode, a first capacitor and a second capacitor coupled to the first photodiode, and a second pixel circuit including a second photodiode, a third capacitor and a fourth capacitor coupled to the second photodiode, a first signal line coupled to the first capacitor, a second signal line coupled to the second capacitor, a third signal line coupled to the third capacitor, a fourth signal line coupled to the fourth capacitor, a first switch circuitry, a second switch circuitry, a first comparator coupled to the first signal line and the third signal line through the first switch circuitry, and a second comparator coupled to the second signal line and the fourth signal line through the second switch circuitry.

Abstract: The present invention provides a solid-state imaging device and a camera system capable of recording a still image without using a recording medium. Each pixel P of an image sensor is provided with a photodiode, a transfer transistor, a reset transistor, and an amplifying transistor, as well as a memory element that has functions of a select transistor. The memory element has a structure integrating a drain side select transistor, a source side select transistor, and a memory transistor. By applying a program voltage to a memory gate electrode as a gate voltage, the memory transistor stores charge of an amount corresponding to an amount of light received by the photodiode in a charge storage layer.

Abstract: The invention discloses a global shutter CMOS image sensor. Each pixel unit of the global shutter CMOS image sensor includes a photo diode, a storage region and a first reset region, wherein the photo diode includes a first photosensitive doped region; a gate structure of a first transfer transistor is formed between the storage region and the first photosensitive doped region; a gate structure of a global shutter transistor is formed between the first reset region and the first photosensitive doped region; and inhomogeneous potentials are formed in the first photosensitive doped region through a doping structure. According to the invention, photo-induced carriers in the PDs of the pixel units, especially photo-induced carriers in the PDs of large pixel units, can be simultaneously and completely transferred to the storage region and the first reset region, and the overall performance of the device is improved.

Abstract: An imaging device includes a pixel circuit configured to generate an analog signal; an amplification circuit including a feedback capacitor and its reset switching element; a sample and hold circuit for the amplified analog signal; an A/D conversion circuit for the analog signal held in the sample and hold circuit; a memory circuit configured to store the digital signal; a reading circuit configured to read the digital signal stored in the memory circuit; and a control circuit configured to perform a rise and a fall of the control signal such that the rise and the fall do not overlap a conversion period of the analog signal by the A/D conversion circuit and do not overlap a reading period of the digital signal by the reading circuit, when the switching element is off during a sampling period of the analog signal.

Abstract: An apparatus includes an image sensor including a first substrate and a second substrate that are stacked one on top of another, the first substrate having a pixel array in which pixel blocks each including a plurality of pixels for performing photoelectric conversion are disposed in matrix, the second substrate having a circuit array in which a plurality of signal processing units that process signals based on the photoelectric conversion are disposed in matrix; obtaining means for obtaining an image signal from the image sensor; and driving control means for controlling driving for obtaining the image signal from the image sensor.

Abstract: An imager that includes a pixel array with a plurality of columns having rows of pixels and with each pixel having a plurality of photodiodes and a common readout circuit that stores respective accumulation voltages from each of the plurality of photodiodes. The imager further includes row driver circuitry that controls the pixel array for pixel addressing and readout, with the row driver circuitry including a plurality of shift registers, and an image sensor controller that controls the plurality of shift registers to address the rows of pixels in the pixel array. Moreover, the row driver circuitry dynamically upward and downward shifts control signals to the pixel array, such that two rows of pixels in a single column of the pixel array are addressed during a single row time.

Abstract: The present disclosure relates to a solid-state imaging device and an electronic device which efficiently capture incident light to improve sensitivity while maintaining the effect of suppressing noise generation. A memory is located on a side opposite from a light receiving surface and formed in the same substrate of Si as a photoelectric conversion element. The substrate including Si is defined by digging the Si deep from the light receiving surface, at a position where the memory is formed, and a bottom light-shielding film is formed at a bottom portion of the defined hole. The present disclosure is applicable to, for example, a stacked and back-illuminated solid-state imaging device.

Abstract: An imaging device includes a semiconductor substrate that includes a first impurity region having n-type conductivity; a photoelectric converter that is electrically connected to the first impurity region and that converts light into charges; a capacitor that includes a first terminal and a second terminal, the first terminal being electrically connected to the first impurity region; and a voltage supply circuit electrically connected to the second terminal. The voltage supply circuit is configured to generate a first voltage and a second voltage different from the first voltage. The first impurity region accumulates positive charges generated by the photoelectric converter.

Abstract: The present disclosure relates to a solid state image sensor and electronic equipment that enable degradation in image quality of a captured image to be suppressed even if any pixel in a pixel array is configured as a functional pixel for obtaining desired information in order to obtain information different from a normal image. In a plurality of pixels constituting subblocks provided in an RGB Bayer array constituting a block which is a set of color units, normal pixels that capture a normal image are arranged longitudinally and laterally symmetrically within the subblock, and functional pixels for obtaining desired information other than capturing an image are arranged at the remaining positions. The present disclosure can be applied to a solid state image sensor.

Abstract: This document describes techniques for color correction using a sensor to reduce color distortions of a camera under a display of a computing device. A correction module of the computing device may determine a color correction used to improve content captured by a camera utilizing, in part, a sensor (e.g., a camera, ambient light sensor, and so forth) positioned underneath the display. The sensor may detect ambient light over time that is modified as it travels through the display, producing color distortions. The sensor may also detect a composite light over time that includes calibration light emitted by the display and ambient light. The correction module may compare the ambient light and composite light to determine the color correction usable to improve both the content captured by the camera and a user experience.

Abstract: CMOS sensors and methods of forming the same are disclosed. The CMOS sensor includes a semiconductor substrate, a plurality of dielectric patterns, a first conductive element and a second conductive element. The semiconductor substrate has a pixel region and a circuit region. The dielectric patterns are disposed between the first portion and the second portion, wherein top surfaces of the plurality of dielectric patterns are lower than top surfaces of the first and second portions. The first conductive element is disposed below the plurality of dielectric patterns. The second conductive element inserts between the plurality of dielectric patterns to electrically connect the first conductive element.

Abstract: An image signal processor is provided. The image signal processor includes a white balancing block which performs white balancing on a raw RGB image of a Bayer pattern received from an image sensor on a kernel basis or in a kernel unit, a green generation block which performs cross-binning on white-balanced G pixel to generate a first green pixel, and adds a high-frequency component to which a preset weight is applied to generate a binned green pixel, a red-blue generation block which generates a U pixel and a V pixel indicating directionality, on the basis of the binned green pixel, a white-balanced R pixel, and a white-balanced B pixel, and merges the binned green pixel to each of the U pixel and the V pixel to generate a binned red pixel and a binned blue pixel and an inverse white balancing block which performs an inverse white balancing on the binned red pixel, the binned green pixel, and the binned blue pixel to output a final binning image.

Abstract: A solid-state imaging device including a plurality of two-dimensionally arranged pixels is provided. The pixels each include a light receiving circuit that senses incident light having arrived at the light receiving element in a light exposure period, a counter circuit that counts the number of arrivals of the incident light based on the light reception signal from the light receiving circuit, a comparison circuit that outputs a comparison signal according to the count from the counter circuit, and a storage circuit that stores a time signal as a distance signal when the comparison signal from the comparison circuit is ON. Transistors included in the light receiving circuit, the counter circuit, the comparison circuit, and the storage circuit have the same conductivity type.

Abstract: A solid-state imaging device includes a first detection pixel and a second detection pixel, each of the first detection pixel and the second detection pixel including a transfer transistor and an amplifier transistor connected to the transfer transistor via a first node, a voltage supply unit that supplies a predetermined voltage, and a connection switch connected between the voltage supply unit and a second node at which the transfer transistor of the first detection pixel and the transfer transistor of the second detection pixel are connected.

Abstract: Provided is an analog-to-digital (AD) conversion device including: a comparator configured to compare an input analog signal and a reference signal; a plurality of first bit-memories configured to hold a digital signal including a plurality of bits generated based on a result of comparison performed by the comparator, each of the plurality of first bit-memories holding a bit signal of a corresponding one bit among the plurality of bits of the digital signal; an output circuit to which the bit signal output from each of the plurality of first bit-memories is commonly input; a transmission line configured to transmit the bit signal output from the output circuit; and a first scanning circuit configured to sequentially select, from the plurality of first bit-memories, a first bit-memory that outputs the bit signal to the output circuit.

Abstract: An image sensor including a semiconductor substrate, a plurality of color filters, a plurality of first lenses and a second lens is provided. The semiconductor substrate includes a plurality of sensing pixels arranged in array, and each of the plurality of sensing pixels respectively includes a plurality of image sensing units and a plurality of phase detection units. The color filters at least cover the plurality of image sensing units. The first lenses are disposed on the plurality of color filters. Each of the plurality of first lenses respectively covers one of the plurality of image sensing units. The second lens is disposed on the plurality of color filters and the second lens covers the plurality of phase detection units.

Abstract: A first region includes first transfer column regions distributed in a first direction. A second region includes second transfer column regions distributed in the first direction. The second region is positioned downstream of the first region in a charge transfer direction. Lengths in a second direction of the first transfer column regions are equal. Lengths in the second direction of the second transfer column regions are longer than the length of the first transfer column region, and increase as the second transfer column region is positioned downstream in the charge transfer direction. A third region is disposed to correspond to the first region and extends along the first direction. A fourth region is disposed to correspond to the second region and extends such that an interval between the fourth region and a pixel region increases in response to a change in the lengths of the second transfer column regions.

Abstract: Pixels, a charge storage element, a comparison signal generator that generates comparison signals, and a first analog-to-digital converter circuit that performs analog-to-digital conversion are included. The comparison signal generator generates the comparison signals such that a waveform having a voltage value that ranges from an upper limit to a lower limit and that has linearity and continuity is formed by connecting waveforms of the comparison signals to each other.

Abstract: According to some examples, an instrument for scanning a specimen on a specimen holder. The instrument includes a scanning stage for supporting the specimen, and a detector having a plurality of pixels. The scanning stage and the detector are movable relative to each other to move the specimen in a scan direction during a scan. At least some of the pixels of the detector are operable to collect light from different depths inside the specimen during the scan and generate corresponding image data. The instrument also includes a processor operable to perform MSIA on the image data to generate a 3D image of the specimen.

Abstract: An image sensor has an array of pixel blocks, and each pixel block having associated shutter transistors with each coupled to transfer an image signal comprising a charge dependent on light exposure of a selected pixel onto an image storage capacitor of a plurality of image storage capacitors associated with the pixel block, the image storage capacitors of the pixel block configured to be read through a differential amplifier into an analog to digital converter. The differential amplifier of each pixel block receives a second input from a single reset-sampling capacitor associated with the pixel block. The single reset-sampling capacitor is loaded when the pixels of the pixel block are reset.

Abstract: A pixel includes a photosensitive circuit, a sense node, a first transistor and a first capacitor. A first electrode of the first capacitor is connected to a control terminal of the first transistor. A second electrode of the first capacitor is to a node of application of a first control signal.

Abstract: An image sensor includes a pixel array including a first pixel and a second pixel which are connected to a first column line, and a row driver configured to control a read operation of the second pixel. A voltage of the first column line is determined based on a higher voltage among a voltage of a floating diffusion node of the first pixel and a voltage of a floating diffusion node of the second pixel during the read operation of the second pixel.

Abstract: Provided is a photoelectric conversion device including: a pixel configured to generate a first signal in accordance with an incident light by photoelectric conversion; an amplifier unit configured to amplify the first signal to output a second signal; and a comparator unit configured to compare a voltage of the second signal with a voltage of a reference signal. A slope of the ramp waveform included in the reference signal can be switched between a first slope ? and a second slope ?, the reference voltage used for determining a setting of a gain in the amplifier unit or the comparator unit can be switched between a first reference voltage Vref1 corresponding to the first slope ? and a second reference voltage Vref2 corresponding to the second slope ?, and ?/??Vref1/Vref2 is satisfied.