Abstract: An image sensing device includes a pixel array configured to include a plurality of pixel groups consecutively arranged in row and column directions. Each of the pixel groups includes a plurality of unit pixels and each unit pixel includes a photoelectric conversion element structured to generate photocharges through a conversion of incident light. Each pixel group outputs a first pixel signal corresponding to photocharges generated by a single unit pixel and a second pixel signal corresponding to a sum of photocharges generated by two or more unit pixels.

Abstract: The present technology relates to an imaging element that can reduce noise. The imaging element includes: a photoelectric conversion element; a first amplification element that amplifies a signal from the photoelectric conversion element; a second amplification element that amplifies an output from the first amplification element; an offset element provided between the first amplification element and the second amplification element; a first reset element that resets the first amplification element; and a second reset element that resets the second amplification element. The offset element is a capacitor. A charge is accumulated in the offset element via a feedback loop of an output from the second amplification element, and an offset bias is generated. The present technology can be applied to an imaging element.

Abstract: To further capture an image in a solid-state image sensor that detects an address event. The solid-state image sensor includes a photoelectric conversion element, a charge accumulation unit, a transfer transistor, a detection unit, and a connection transistor. The photoelectric conversion element generates a charge by photoelectric conversion. The charge accumulation unit accumulates the charge and generates a voltage according to an amount of the charge. The transfer transistor transfers the charge from the photoelectric conversion element to the charge accumulation unit. The detection unit detects whether or not a change amount of a photocurrent according to the amount of the charge exceeds a predetermined threshold. The connection transistor connects the charge accumulation unit and the detection unit to cause the photocurrent to flow.

Abstract: An image sensor may include an array of image pixels arranged in rows and columns. Each column of pixels may be coupled to current source transistors and capacitance cancellation circuitry. The capacitance cancellation circuitry may include capacitors, a common source amplifier transistor, an autozero switch, a switch for selectively deactivating at least one of the capacitors during sample-and-hold reset and sample-and-hold signal operations.

Abstract: An image sensor element includes a transfer transistor TX, a LOFIC select transistor LF, a photodiode PD, and a first overflow path OFP. The transfer transistor TX outputs a readout signal from a first end. The LOFIC select transistor LF includes a first end connected to a second end of the transfer transistor TX, and a second end connected to a capacitor. The photodiode PD is connected in common to a third end of the transfer transistor and a third end of the LOFIC select transistor LF. The first overflow path OFP is formed between the photodiode PD and a second end of the LOFIC select transistor LF. Each of the transfer transistor TX and the LOFIC select transistor LF is configured with a vertical gate transistor.

Abstract: A conversion apparatus includes a conversion unit, a first transistor configured to receive a charge in the conversion unit at a gate thereof, a second transistor connected to the gate, a signal line configured such that a signal is output from the first transistor thereto, a third transistor provided in a path between the signal line and the first transistor, a first line configured to supply a potential for turning off the second transistor, a second line configured to supply a potential for turning off the third transistor that is a common potential also used as the potential for turning off the second transistor, and an isolator connected to the first line and the second line.

Abstract: A technique is presented for quantizing pixels of an image using Sigma Delta quantization. In one aspect, pixel values for an image are segmented into columns of pixel values; and for each column in the matrix, pixel values of a given column are quantized using sigma delta modulation. The pixel values in a given column are preferably quantized as a whole, thereby minimizing accumulated quantization error from a starting pixel value in the given column to a current pixel value in the given column. In another aspect, the pixels of an image are quantized using a 2D generalization of Sigma Delta modulation.

Abstract: An imaging device according to an embodiment of the present disclosure includes a pixel array including a plurality of pixels, a scanning control section that controls scanning of the plurality of pixels, and a readout control section that controls reading of the plurality of pixels. The imaging device further includes a first waveform generation part that generates a plurality of control signals for controlling of at least one of the scanning control section or the readout control section, a second waveform generation part that generates a plurality of reference signals, and a failure detection section that detects a failure of the first waveform generation part or the second waveform generation part on a basis of comparison between the plurality of control signals and the plurality of reference signals.

Abstract: There is provided a pixel circuit capable of outputting time difference data or image data, and including a first temporal circuit and a second temporal circuit. The first temporal circuit is used to store detected light energy of a first interval and a second interval as the time difference data. The second temporal circuit is used to store detected light energy of the second interval as the image data. The pixel circuit is used to output a pulse width signal corresponding to the time difference data or the image data in different operating modes.

Abstract: An image sensor is provided to include an active region which comprises: a floating diffusion region; a transfer transistor gate region; transistor active regions; and a well-tap region. The transfer transistor gate region may have a diagonal bar shape to isolate the floating diffusion region in a first corner of the active region. The well-tap region may be positioned between the transfer transistor gate region and the transistor active regions, and isolate the transfer transistor gate region from the transistor active regions.

Abstract: To suppress entrance of incident light into a charge holding section in a pixel to prevent a reduction in image quality. An imaging device includes a pixel array. The pixel array includes a plurality of pixels each including a photoelectric converter that generates a charge depending on incident light, a charge holding section that holds the generated charge, and a charge transfer section that transfers the generated charge to the charge holding section, each of the plurality of pixels generating an image signal depending on the held charge. The charge holding section or the charge transfer section in each of the plurality of pixels is arranged close to an optical center of the pixel array with respect to the incident light.

Abstract: In a solid-state imaging element in which AD conversion using a reference signal is performed, power consumption of a circuit that generates the reference signal is reduced. A pixel section outputs a pixel signal based on the light amount of incident light. A reference signal supply section generates a first reference signal and a second reference signal. A comparison section includes a first differential pair transistor to which the pixel signal and a signal based on the first reference signal are inputted and a second differential pair transistor to which the second reference signal is inputted. A counter section performs counting on the basis of a signal from the comparison section.

Abstract: An image sensor includes: a first and a second pixel, each of which includes a first photoelectric conversion unit that photoelectrically converts light that has passed through a micro lens and generates a first charge, a second photoelectric conversion unit that photoelectrically converts light that has passed through the micro lens and generates a second charge, an accumulation unit that accumulates at least one of the first charge and the second charge, a first transfer unit that transfers the first charge to the accumulation unit, and a second transfer unit that transfers the second charge to the accumulation unit; and a control unit that outputs, to the first transfer unit of the first pixel and to the second transfer unit of the second pixel, a signal that causes the first charge of the first pixel and the second charge of the second pixel to be transferred to their accumulation units.

Abstract: There is provided a pixel circuit for performing analog operation including a photodiode, a first temporal circuit, a second temporal circuit and an operation circuit. Within a first interval, the photodiode detects first light energy to be stored in the first temporal circuit. Within a second interval, the photodiode detects second light energy to be stored in the second temporal circuit. Within an operation interval, the first temporal circuit outputs a first detection signal having a first pulse width according to the first light energy and outputs a second detection signal having a second pulse width according to the second light energy for being calculated by the operation circuit.

Abstract: An image sensing device includes a photoelectric conversion element configured to generate photocharges in response to incident light, a floating diffusion configured to temporarily store the photocharges generated by the photoelectric conversion element, and a transfer gate configured to transmit the photocharges generated by the photoelectric conversion element to the floating diffusion region. The transfer gate includes a main transfer gate disposed to overlap a center section of the photoelectric conversion element and configured to operate in response to a first transmission signal, and a sub transfer gate disposed to overlap a boundary region of the photoelectric conversion element and configured to operate in response to a second potential level different from the first potential level.

Abstract: A photoelectric conversion apparatus includes a second substrate including a signal processing circuit configured to perform signal processing using machine learning on a signal output from the first substrate. The second substrate is disposed on the first substrate in a multilayer structure. The signal processing circuit is so disposed to overlap with a pixel array but not overlap with a light-shielded pixel area as seen in a plan view.

Abstract: An imaging apparatus is provided in which signals from a plurality of pixels are output to signal output lines during a predetermined reading period, a first reading mode and a second reading mode where analog-to-digital (AD) conversion circuits perform AD conversion on the signals are included, and the reading period includes a first period from when the signals from the pixels are output to the signal output lines to when the AD conversion circuits start AD conversion on the signals a predetermined time later, and a second period where the AD conversion circuits perform the AD conversion on the signals from the pixels, the reading period is equal between the first and second reading modes, and lengths of the first and second periods are different from each other.

Abstract: An imaging apparatus includes: an imaging unit that has a pixel region in which a plurality of pixels is arranged and reads and outputs a pixel signal from the pixels included in the pixel region; a unit-of-readout controller that controls a unit of readout set as a part of the pixel region; a first unit-of-readout setting unit that sets a first unit of readout that is used for reading out the pixel signal from the pixel region for a recognition process that has learned training data for each of the units of readout; a second unit-of-readout setting unit that sets a second unit of readout that is used for reading out the pixel signal from the pixel region so as to output the pixel signal to a subsequent stage; and a mediation unit that performs mediation between the first unit of readout and the second unit of readout.

Abstract: Provided is a solid-state imaging device, including a first electrode formed on a semiconductor layer, a photoelectric conversion layer formed on the first electrode, a second electrode formed on the photoelectric conversion layer, and a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated. A voltage of the third electrode is controlled to a voltage corresponding to a detection result which can contribute to control of discharge of charges or assist for transfer of charges. The detection results corresponds to one of light or temperature and the voltage of third electrode is controlled according to an output of a frame image obtained before exposure.

Abstract: A depth camera assembly is used to obtain depth information describing a local area. The depth camera assembly includes a sensor having a plurality of pixels. Some or all of the pixels are divided into groups that are coupled to respective multi-purpose time-to-digital converters. Each multi-purpose time-to-digital converter comprises an oscillator and a counter. Each pixel in a group is associated with a multiplexer that is configured to select between inputs coupled to the pixel, the oscillator, or a counter associated with a different pixel. The multiplexer outputs the signal to the counter for the time-to-digital converter associated with the pixel. A time-of-flight measurement is taken during a first portion of an image frame. During a second portion of the image frame, the sensor may be used as an intensity counter. During a third portion of the image frame, the depth sensor may be calibrated.

Abstract: A photoelectric conversion apparatus that includes a pixel region having photoelectric conversion elements includes a semiconductor layer having first and second surfaces, and the photoelectric conversion elements are disposed between the first and second surfaces. With a virtual plane extending along the second surface between the first and second surfaces being a third plane, the pixel region includes an element isolating portion constituted by an insulator disposed closer to the first surface than the third plane, and first and second isolating portions constituted by grooves provided in the semiconductor layer to pass through the third plane. The first isolating portion overlaps the element isolating portion in a normal direction to the third plane. An end of the second isolating portion on a side on the first surface is closer to the second surface than an end of the first isolating portion on a side on the first surface is.

Abstract: A pixel array uses two sets of pixels to provide accurate exposure control. One set of pixels provide continuous output signals for automatic light control (ALC) as the other set integrates and captures an image. ALC pixels allow monitoring of multiple pixels of an array to obtain sample data indicating the amount of light reaching the array, while allowing the other pixels to provide proper image data. A small percentage of the pixels in an array is replaced with ALC pixels and the array has two reset lines for each row; one line controls the reset for the image capture pixels while the other line controls the reset for the ALC pixels. In the columns, at least one extra control signal is used for the sampling of the reset level for the ALC pixels, which happens later than the sampling of the reset level for the image capture pixels.

Abstract: Advanced processing is performed in a chip. A stacked light-receiving sensor according to an embodiment includes a first substrate (100, 200, 300) and a second substrate (120, 320) bonded to the first substrate. The first substrate includes a pixel array (101) in which a plurality of unit pixels are arranged in a two-dimensional matrix. The second substrate includes a converter (17) configured to convert an analog pixel signal output from the pixel array to digital image data and a processing unit (15) configured to perform a process based on a neural network calculation model for data based on the image data. At least a part of the converter is arranged on a first side in the second substrate. The processing unit is arranged on a second side opposite to the first side in the second substrate.

Abstract: A solid-state imaging device according to an embodiment includes a photoelectric conversion unit, a charge transfer unit configured to transfer a charge accumulated in the photoelectric conversion unit, a first charge modulation unit to which the charge is transferred from the photoelectric conversion unit by the charge transfer unit, a second charge modulation unit, a charge accumulation unit configured to accumulate a charge overflowing from the photoelectric conversion unit during an accumulation period, a modulation switching unit configured to couple or divide the first charge modulation unit and the second charge modulation unit, and a capacitance connection unit configured to couple or divide the second charge modulation unit and the charge accumulation unit, in which, in a state of the first charge modulation unit alone and a state where the first charge modulation unit and the second charge modulation unit are coupled by the modulation switching unit, the charge accumulated in the photoelectric conve

Abstract: An object is to provide a pixel structure of a display device including a photosensor which prevents changes in an output of the photosensor and a decrease in imaging quality. The display device has a pixel layout structure in which a shielding wire is disposed between an FD and an imaging signal line (a PR line, a TX line, or an SE line) or between the FD and an image-display signal line in order to reduce or eliminate parasitic capacitance between the FD and a signal line for the purpose of suppressing changes in the potential of the FD. An imaging power supply line, image-display power supply line, a GND line, a common line, or the like whose potential is fixed, such as a common potential line, is used as a shielding wire.

Abstract: An image sensing system includes a camera module and an application processor. The camera module includes: an image sensor including a pixel array, the pixel array including color filters having a first pattern, the image sensor being configured to sense light incident on the pixel array to generate a first pattern image signal having the first pattern; a first converter configured to convert the first pattern image signal into a second pattern image signal having a second pattern different from the first pattern; and a second converter configured to convert the second pattern image signal into a third pattern image signal having a third pattern different from the first pattern and the second pattern. The application processor is configured to perform image processing on the third pattern image signal.

Abstract: In accordance with some embodiments, systems, methods and media for high dynamic range quanta burst imaging are provided. In some embodiments, the system comprises: an image sensor comprising single photon detectors in an array; a processor programmed to: generate a sequence of binary images representing a scene; divide the sequence of binary images into blocks; generate block-sum images from the blocks; determine alignments between the block-sum images and a reference block-sum image; warp the sequence of binary images based on the alignments; generate warped block-sum images using warped binary images; merge the warped block-sum images; display a final image of the scene based on the merged warped block-sum images.

Abstract: A semiconductor device includes first to N-th voltage output circuits each outputting an output voltage and outputs a feedback voltage having a voltage value corresponding to the output voltage, and a differential circuit including first to N-th primary side transistors to which N feedback voltages are input and that individually flow first to N-th currents through a first node, a secondary side transistor that flows a reference current corresponding to a reference voltage through the first node, and a current mirror circuit as an active load. The current mirror circuit includes first to N-th primary side load transistors individually coupled in cascade to the first to N-th primary side transistors, a secondary side load transistor coupled in cascade to the secondary side transistor and generates a voltage at a connection point between the secondary side transistor and the secondary side load transistor as a control voltage.

Abstract: A solid-state imaging device includes: a plurality of pixel cells arranged in a matrix. In the solid-state imaging device, each of the plurality of pixel cells includes: a photoelectric converter that generates charge by photoelectric conversion, and holds a potential according to an amount of the charge generated; an initializer that initializes the potential of the photoelectric converter; a comparison section that compares the potential of the photoelectric converter and a predetermined reference signal, and causes the initializer to perform initialization when the potential of the photoelectric converter and the predetermined reference signal match; and a counter that counts a total number of times of initialization performed by the initializer, and outputs a signal corresponding to the total number of times as a first signal indicating an intensity of incident light.

Abstract: A Light Detection and Ranging (LIDAR) system integrated in a vehicle includes a LIDAR transmitter configured to transmit laser beams into a field of view, the field of view having a center of projection, and the LIDAR transmitter including a laser to generate the laser beams transmitted into the field of view. The LIDAR system further includes a LIDAR receiver including at least one photodetector configured to receive a reflected light beam and generate electrical signals based on the reflected light beam. The LIDAR system further includes a controller configured to receive feedback information and modify a center of projection of the field of view in a vertical direction based on the feedback information.

Abstract: An image sensor includes a plurality of pixels that is arranged in a matrix and each of which outputs a signal in response to incident light, wherein readout of data can be performed with respect to the plurality of pixels, and simultaneous readout of data of a plurality of columns of pixels can be performed, and at least one pixel of the plurality of columns of pixels to be read simultaneously can be read for phase detection with respect to each of divided sub-pixels. The image sensor is configured to, with n rows as a readout unit where n is an integer of 2 or more, perform readout for at least one sub-pixel of at least one pixel in one readout cycle within the readout unit, perform readout for each pixel including phase detection readout for the other sub-pixel of the at least one pixel in which the at least one sub-pixel has been read in the one readout cycle, in another readout cycle within the readout unit, and end the readout for the readout unit with the n+1 readout cycles.

Abstract: A first circuit constituting a plurality of first circuit in a first direction, which stores a signal output from a pixel having a photoelectric conversion unit; a first control unit to which the plurality of first circuits are connected and outputs a first signal for outputting signals stored in the plurality of first circuits; a readout unit that reads out the signal output from the first circuit; a plurality of second circuits that are connected to the first control unit, a plurality of sets of the plurality of second circuits in the first direction; and a second control unit that controls a readout of the signal by the readout unit. The first control unit outputs a second signal to the plurality of second circuits together with the first signal; and the second control unit controls the readout of the signal by the readout unit, based on the second signal.

Abstract: A scanning system includes a scanning structure configured to rotate about at least one first scanning axis; a driver configured to drive the scanning structure about the at least one first scanning axis and detect a position of the scanning structure with respect to the at least one first scanning axis during movement of the scanning structure; a segmented pixel sensor including a plurality of sub-pixel elements arranged in a pixel area; and a controller configured to selectively activate and deactivate the plurality of sub-pixel elements into at least one active cluster and at least one deactivated cluster to form at least one active pixel from the at least one active cluster, receive first position information from the driver indicating the detected position of the scanning structure, and dynamically change a clustering of activated sub-pixel elements and a clustering of deactivated sub-pixel elements based on the first position information.

Abstract: A radiation detector having a plurality of pixels is provided. A respective one of the plurality of pixels includes a base substrate; a thin film transistor on the base substrate; an insulating layer on a side of the thin film transistor away from the base substrate; a photosensor on a side of the insulating layer away from the base substrate; a passivation layer on a side of the photosensor away from the base substrate; a scintillation layer on a side of the passivation layer away from the base substrate; and a reflective layer on a side of the scintillation layer away from the base substrate. The photosensor includes a first polarity layer in direct contact with the passivation layer. All sides of the first polarity layer other than a side internal to the photosensor are entirely in direct contact with the passivation layer.

Abstract: An image sensor having a shield including, for example, a metal, is above an electrical charge storage element in a pixel region to block light incident toward the electrical charge storage element, thereby making it possible to reduce or prevent reading a charge value including leakage charge introduced to the electrical charge storage element, and thus adversely affecting an image result.

Abstract: A detection device includes a sensor area in which a plurality of detection elements each comprising a photoelectric conversion element are arranged in a detection region, a drive circuit configured to supply a plurality of drive signals to the detection elements, and a detection circuit configured to process a detection signal output from each of the detection elements.

Abstract: An image sensing device includes a pixel array including a plurality of unit pixels consecutively arranged and structured to generate an electrical signal in response to incident light by performing photoelectric conversion of the incident light. The unit pixels are isolated from each other by first device isolation structures. Each of the unit pixels includes a photoelectric conversion element structured to generate photocharges by performing photoelectric conversion of the incident light, a floating diffusion region structured to receive the photocharges, a transfer transistor structured to transfer the photocharges generated by the photoelectric conversion element to the floating diffusion region, and a well tap region structured to apply a bias voltage to a well region. The well tap region is disposed at a center portion of a corresponding unit pixel.

Abstract: Embodiments of a hybrid imaging sensor that optimizes a pixel array area on a substrate using a stacking scheme for placement of related circuitry with minimal vertical interconnects between stacked substrates and associated features are disclosed. Embodiments of maximized pixel array size/die size (area optimization) are disclosed, and an optimized imaging sensor providing improved image quality, improved functionality, and improved form factors for specific applications common to the industry of digital imaging are also disclosed.

Abstract: An example method includes using a plurality of switches corresponding to a plurality of capacitors to select a first set of capacitors for charging at a first time. Charging the first set of capacitors corresponds to sampling from a first set of adjacent light detectors. The method includes using the plurality of switches to select a second set of capacitors from the plurality of capacitors for discharging at a second time. The method includes using a sampling switch to sample an output of the second set of capacitors as they discharge. The output of the second set of capacitors corresponds to the first set of adjacent light detectors. The method includes determining, based on sampling the output of the second set of capacitors, a collective intensity of light received by the first set of adjacent light detectors.

Abstract: A fingerprint sensing device including a plurality of pixel blocks is provided. The pixel blocks are arranged in an array. Each of the pixel blocks includes a conversion gain. At least two of the conversion gains are different, and the pixel block located in a central location of the array has a minimum conversion gain.

Abstract: A solid-state image sensor includes a pixel array section including a plurality of unit pixels each having a photoelectric conversion unit, the plurality of unit pixels being arranged in a matrix, a constant current source circuit unit having a constant current source connected to each of vertical signal lines provided in association with column arrangement of the pixel array section; and a control unit configured to control the constant current source circuit unit. The constant current source includes a plurality of transistors. The control unit switches, in a case where the plurality of transistors constituting the constant current source is regarded as one transistor having a gate width and a gate length being equivalent to each other, a ratio between the gate width and the gate length of the plurality of transistors on the basis of illumination in image-capturing environment.

Abstract: An image sensor includes a pixel including a reset circuit and a floating diffusion node, and outputting a pixel signal that is generated based on a voltage at the floating diffusion node, the pixel signal including a reset output that is generated based on the voltage at the floating diffusion node being reset by the reset circuit. The image sensor further includes a sampler sampling the output pixel signal to generate a sampling signal having a time interval corresponding to a magnitude of the output pixel signal, and a counter counting the generated sampling signal, based on a counter clock, to generate a counting value corresponding to the time interval of the sampling signal. The sampler samples the reset output of the output pixel signal n times to generate first to n-th reset sampling signals, where n is an integer of 2 or more.

Abstract: A solid-state image capturing element includes a pair of first floating diffusion layers arranged in a direction perpendicular to a predetermined direction and a pair of second floating diffusion layers arranged in the perpendicular direction and adjacent to the pair of first floating diffusion layers in the predetermined direction. The element includes a first connection circuit configured to select at least one of the pair of first floating diffusion layers and to connect the selected first floating diffusion layer to a predetermined first wire; a second connection circuit configured to select at least one of the pair of second floating diffusion layers and to connect the selected second floating diffusion layer to the first wire; and an output circuit configured to output a signal according to an amount of charge of at least one of the pair of first floating diffusion layers or the pair of second floating diffusion layers.

Abstract: Various aspects of the present disclosure generally relate to a sensor module. In some aspects, an image sensor module may include an array of photon sensors configured to output a first set of signals corresponding to a set of photon sensors of the array of photon sensors. The set of photon sensors may include a row of photon sensors, or a column of photon sensors, of the array of photon sensors. The image sensor module may include a plurality of data selector components configured to receive the first set of signals and output a second set of signals corresponding to a subset of the set of photon sensors.

Abstract: A photoelectric conversion apparatus includes a light receiving circuit configured to convert light into an electrical signal, a readout circuit configured to read out an analog signal corresponding to the electrical signal, a ?? A/D converter configured to convert the analog signal into a digital signal, and a control circuit configured to change a gain of the photoelectric conversion apparatus in accordance with a change of a driving mode of the photoelectric conversion apparatus. The analog signal read out by the readout circuit is an analog current signal. The readout circuit includes a variable resistor on a signal path for supplying the analog current signal to the ?? A/D converter. The control circuit changes the gain of the photoelectric conversion apparatus by changing a resistance value of the variable resistor.

Abstract: Disclosed are a solid-state imaging apparatus, a signal processing method of a solid-state imaging apparatus, and an electronic device, which are capable of correcting uneven sensitivities generated by multiple factors in a broad area and realizing the higher-precision image quality. A correction circuit 710 weight a sensitivity Pi corresponding to a pixel signal of each pixel related to correction in a pixel unit PU that is the correction target and a sensitivity Pi corresponding to a pixel signal of each pixel related to correction in at least one same color pixel unit PU and adjacent to the pixel unit PU that is the correction target by a weighting coefficient Wi. Consequently, the correction coefficient ? is calculated by dividing a sum of the weighted sensitivities by a total number n of pixels related to correction.

Abstract: Some image sensors include pixels with capacitors. The capacitor may be used to store charge in the imaging pixel before readout. The capacitor may be a metal-insulator-metal (MIM) capacitor that is susceptible to dielectric relaxation. Dielectric relaxation may cause lag in the signal on the capacitor that impacts the signal on the capacitor during sampling. The image sensor may include dielectric relaxation correction circuitry that leverages the linear relationship between voltage stress and lag signal to correct for dielectric relaxation. The image sensor may include shielded pixels that operate with a similar timing scheme as the imaging pixels in the active array. Measured lag signals from the shielded pixels may be used to correct imaging data.

Abstract: A photoelectric conversion device comprising: a plurality of effective pixels and a plurality of light shielded pixels which are arranged respectively in a plurality of rows and a plurality of columns; and a signal processing circuit, wherein in a period during which pixel signals are output from first light shielded pixels which are first-row light shielded pixels to a first vertical output line, pixel signals are output from second light shielded pixels which are second-row light shielded pixels to a second vertical output line, and the signal processing circuit corrects effective pixel signals output from the effective pixels by using a correction signal obtained by performing filtering processing on pixel signals from the first light shielded pixels and on the pixel signals from the second light shielded pixels.

Abstract: The present technology relates to an imaging element that can reduce noise. The imaging element includes: a photoelectric conversion element; a first amplification element that amplifies a signal from the photoelectric conversion element; a second amplification element that amplifies an output from the first amplification element; an offset element provided between the first amplification element and the second amplification element; a first reset element that resets the first amplification element; and a second reset element that resets the second amplification element. The offset element is a capacitor. A charge is accumulated in the offset element via a feedback loop of an output from the second amplification element, and an offset bias is generated. The present technology can be applied to an imaging element.

Abstract: A focus detection device includes: an imaging unit having a first and second pixel each of which receives light transmitted through an optical system and outputs signal used for focus detection, and a third pixel which receives light transmitted through the optical system and outputs signal used for image generation; an input unit to which information regarding the optical system is input; a selection unit that selects one of the first and second pixel based on the information to the input unit; a readout unit that reads out the signal from one of the first and second pixel based on a selection result at a timing different from reading out the signal from the third pixel to be read out; and a focus detection unit that performs the focus detection based on at least one of the signals of the first and second pixel read out by the readout unit.