Abstract: A charge release circuit includes a plurality of pixel circuits and at least one photosensitive control circuit, and each photosensitive control circuit is connected to at least one pixel circuit. Each pixel circuit of the at least one pixel circuit includes: a discharge circuit connected to the photosensitive control circuit, and a first capacitor connected to the discharge circuit and configured to store a display driving signal. The photosensitive control circuit is configured to control the discharge circuit to be turned on in a state where a backlight of a display device is turned off to release residual charges in the first capacitor.

Abstract: An image sensing device is provided to include a pixel region and a peripheral region located outside of the pixel region. The peripheral region includes logic circuits located to receive a pixel signals from the pixel region and configured to process the pixel signals and a capacitor located adjacent to the logic circuits. The capacitor includes an active region, a recessed structure, and a first junction. The active region includes a first impurity region and a second impurity region formed over the first impurity region. The recessed structure is at least partly disposed in the active region and including a first portion disposed in the active region and including a conductive material and a second portion surrounding the first portion and including an insulation material. The first junction is formed in the active region and spaced apart from the recessed structure by a predetermined distance.

Abstract: An image sensor includes a substrate having a pixel region and a periphery region. The image sensor further includes a first isolation structure formed in the pixel region; the first isolation structure including a first trench having a first depth. The image sensor further includes a second isolation structure formed in the periphery region; the second isolation structure including a second trench having a second depth greater than the first depth. The pixel region includes only NMOS devices and the periphery region includes both NMOS and PMOS devices.

Abstract: In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.

Abstract: A readout circuit for use in an image sensor includes a first sample and hold (SH) circuit coupled to a bitline that is coupled to a pixel array. A second SH circuit is coupled to the bitline. A bypass switch is coupled to the bitline, the first SH circuit, and the second SH circuit. An analog to digital converter (ADC) is coupled to the bypass switch. The bypass switch is configured to provide an image charge value from the pixel array to the ADC through the bitline, or through one of the first SH circuit or the second SH circuit in response to a switch select signal.

Abstract: Digital circuitry is provided that periodically reads at least one bit of digital counters associated with pixels of an image sensor. When the read bit(s) of a particular digital counter decrease between subsequent reads, then the digital circuitry increments an overflow counter associated with the particular digital counter. The value of each of the overflow counters of the digital circuitry are used with the corresponding values of the digital counters to generate pixel values for a frame (also referred to as an image).

Abstract: An image processing method is provided, wherein the image processing method includes the steps of: receiving raw image data from an image sensor, wherein the image sensor is a four-cell Bayer sensor, the raw image data includes color information of each pixel, and the color information of each pixel only corresponds to a single color; for a specific pixel to be processed, selecting a region including the specific pixel; referring to a position of the specific pixel to determine whether to flip color information within the region to generate a flipped region; and using color information of at least one portion of pixels within the region or the flipped region to perform an interpolation operation, to generate color information that the specific pixel lacks.

Abstract: A pixel circuit includes a front-end circuit, a signal storage circuit, and an output circuit. All of the front-end circuit, the signal storage circuit and the output circuit are coupled to a common floating diffusion (FD) node. The front-end circuit is arranged to generate pixel signals. The signal storage circuit is arranged to store the pixel signals generated by the front-end circuit, wherein when the pixel circuit is selected for performing a read-out operation, the pixel signals stored in the signal storage circuit are pulled up from original voltage levels to other voltage levels higher than the original voltage levels according to a voltage increment applied to a control voltage of the signal storage circuit. When the pixel circuit is selected for performing the read-out operation, the output circuit generates output signals on an output terminal according to voltage levels of the common FD node, respectively.

Abstract: The present technology relates to a solid-state imaging device that can improve the sensitivity of imaging pixels while maintaining AF properties of a focus detecting pixel. The present technology also relates to a method of manufacturing the solid-state imaging device, and an electronic apparatus. The solid-state imaging device includes: a pixel array unit including pixels; first microlenses formed in the respective pixels; a film formed to cover the first microlenses of the respective pixels; and a second microlens formed on the film of the focus detecting pixel among the pixels. The present technology can be applied to CMOS image sensors, for example.

Abstract: An amplifier includes a first capacitor connected between an input node and a floating node, a second capacitor connected between the floating node and an output node, an amplifying element connected between a power supply voltage and the output node and operating in response to a voltage level of the floating node, a current bias source connected between the output node and a ground voltage, a first reset switch connected between the floating node and an intermediate node and operating in response to a reset bias, a second reset switch connected between the intermediate node and the output node and operating in response to the reset bias, and a reset bias generator circuit that outputs the reset bias in response to a reset signal. The reset bias is one of a reset voltage of the intermediate node, the power supply voltage, and the ground voltage.

Abstract: A method of switching a control voltage of a photo sensor cell for a photo sensor includes when the photo sensor cell is switched from a turned-off state to an turned-on state, sequentially switching the control voltage to at least one first voltage provided by at least one first voltage supply, and switching the control voltage to a first target voltage provided by a first charging pump circuit; and when the photo sensor cell is switched from the turned-on state to the turned-off state, sequentially switching the control voltage to at least one second voltage provided by at least one second voltage supply or a ground voltage, and switching the control voltage to a second target voltage provided by a second charging pump circuit.

Abstract: A readout arrangement for an image sensor is configured to receive from a plurality of column leads of the image sensor in parallel a plurality of image sensor analog signals describing in an analog manner brightness values detected by the image sensor. The readout arrangement is configured to select which subset of a plurality of analog values represented by the image sensor analog signals or based on the image sensor analog signals is to be stored in an analog memory for further processing, and to cause storage of the selected analog values in the analog memory, or to store the selected analog values in the analog memory.

Abstract: Disclosed is a light receiving element including an on-chip lens, a wiring layer, and a semiconductor layer disposed between the on-chip lens and the wiring layer. The semiconductor layer includes a photodiode, a first transfer transistor that transfers electric charge generated in the photodiode to a first charge storage portion, a second transfer transistor that transfers electric charge generated in the photodiode to a second charge storage portion, and an interpixel separation portion that separates the semiconductor layers of adjacent pixels from each other, for at least part of the semiconductor layer in the depth direction. The wiring layer has at least one layer including a light blocking member. The light blocking member is disposed to overlap with the photodiode in a plan view.

Abstract: Provided is a photoelectric conversion device including a first holding portion that holds charges transferred from at least one of a first photoelectric conversion unit, a second photoelectric conversion unit, and a third photoelectric conversion unit, the first photoelectric conversion unit and the second photoelectric conversion unit are arranged adjacent to each other along a first direction, the first photoelectric conversion unit and the third photoelectric conversion unit are arranged adjacent to each other along a second direction, which is different from the first direction, and the first holding portion is arranged at a position at least partially overlapping a straight line connecting the optical center of the second photoelectric conversion unit to the optical center of the third photoelectric conversion unit.

Abstract: In one embodiment, an integrated image sensor includes an array of pixels in which each pixel includes a photosensitive area configured to integrate a luminous signal by generating electron-hole pairs so as to form a first signal representative of the number of electrons in the generated electron-hole pairs and a second signal representative of the number of holes in the generated electron-hole pairs. A first circuit portion is configured to store the first signal sheltered from light. A second circuit portion is configured to store the second signal sheltered from light. A third circuit portion is configured to read the first signal and the second signal and able to perform combination operations between the first signal and the second signal so as to generate a combined signal representative of an image, where the integrated image sensor is tailored to operate in a global shutter control mode.

Abstract: A global shutter pixel includes a first transistor and a first switch series-connected between a first node of application of a potential and an internal node of the pixel. A control terminal of the first transistor is coupled to a floating diffusion node of the pixel. At least two assemblies are coupled to the internal node, where each assembly is formed of a capacitor series-connected with a second switch coupling the capacitor to the internal node. A second transistor has a control terminal connected to the internal node and a first conduction terminal coupled to an output node of the pixel. The pixel operation is controlled to store an initialization voltage from the floating diffusion on one of the capacitors and a pixel integration voltage from the floating diffusion on another of the capacitors.

Abstract: A solid state imaging device includes a pixel array unit in which color filters of a plurality of colors are arrayed with four pixels of vertical 2 pixels×horizontal 2 pixels as a same color unit that receives light of the same color, shared pixel transistors that are commonly used by a plurality of pixels are intensively arranged in one predetermined pixel in a unit of sharing, and a color of the color filter of a pixel where the shared pixel transistors are intensively arranged is a predetermined color among the plurality of colors. The present technology can be applied, for example, to a solid state imaging device such as a back-surface irradiation type CMOS image sensor.

Abstract: An image sensor element for outputting an image signal. The image sensor element initially includes a first photoelement, the first photoelement being situated on a spatial area of a pixel on a semiconductor substrate. The image sensor element also includes a second photoelement that is doped and/or provided with a color filter in such a way that a spectral sensitivity of the first photoelement differs from a spectral sensitivity of the second photoelement. Lastly, the image sensor element includes an evaluation electronics system that is situated in the area of the pixel on the semiconductor substrate, the evaluation electronics system being situated in the area of the pixel in which the first photoelement is also implemented. The evaluation electronics system is designed to process a photoelement signal of the first photoelement and a photoelement signal of the second photoelement to form the image signal.

Abstract: A single photon avalanche diode, SPAD, comprises an active area which is arranged to generate a photon triggered avalanche current. A cover is arranged on or above the active area. The cover shields the active area from incident photons. The cover comprises a stack of at least the first and a second metal layer. At least one of the metal layers, e.g. the first metal layer, comprises an aperture. The metal layers are arranged in the stack with respect to an optical axis such as to open an effective aperture along the optical axis. By way of the effective aperture a portion of the active area is exposed to incident photons being incident along the optical axis. The effective aperture is smaller than the aperture arranged in the first metal layer.

Abstract: A solid state imaging device includes: a pixel array unit that has a plurality of pixels 2-dimensionally arranged in a matrix and a plurality of signal lines arranged along a column direction; A/D conversion units that are provided corresponding to the respective signal lines and convert an analog signal output from a pixel through the signal line into a digital signal; and a switching unit that switches or converts the analog signal output through each signal line into a digital signal using any of an A/D conversion unit provided corresponding to the signal line through which the analog signal is transmitted, and an A/D conversion unit provided corresponding to a signal line other than the signal line through which the analog signal is transmitted.

Abstract: When the amplification ratio is low and strong incident light causes a large charge, the signal retrieved from regions where the incident light is weak is also weak, but when the amplification ratio is high in regions where the incident light is weak, the signal retrieved from regions where the incident light is strong becomes saturated. Therefore, the dynamic range of the imaging unit is narrow. Provided is an imaging unit comprising an imaging section that includes a first group having one or more pixels and a second group having one or more pixels different from those of the first group; and a control section that, while a single charge accumulation is performed in the first group, causes pixel signals to be output by performing charge accumulation in the second group a number of times differing from a number of times charge accumulation is performed in the first group.

Abstract: The present disclosure relates to a solid-state imaging device and an electronic device capable of effectively preventing blooming. Provided is a solid-state imaging device including: a pixel array portion in which a plurality of pixels is two-dimensionally arranged, in which the pixels each include an in-pixel capacitance and a counter electrode of the in-pixel capacitance, the in-pixel capacitance being provided on a side opposite to a light incident surface of a photoelectric conversion element provided in a semiconductor substrate, the counter electrode being provided in the semiconductor substrate. The present disclosure can be applied to, for example, a back-illuminated CMOS image sensor.

Abstract: The present disclosure relates to image signal processor configurations. In accordance with aspects, a system includes at least one image signal processor, a first camera configured to cooperate with the image signal processor(s) to capture images of an environment around a vehicle, and a second camera configured to cooperate with the image signal processor(s) to capture images of the environment, where the second camera and the first camera are mounted to the vehicle in the same direction. The image signal processor(s) is configured to transition from capturing images of a field of view using an active image signal processor (ISP) configuration to capturing images of the field of view using a matched image signal processor (ISP) configuration which is different from the active ISP configuration. The transition includes simultaneously using the first camera and the second camera and includes simultaneously using the active ISP configuration and the matched ISP configuration.

Abstract: A method of driving a solid-state imaging device includes: setting voltage of an input node of an amplifier unit to a first voltage by using logarithmic compression to convert current generated by charges overflowing from a photoelectric conversion unit to the input node into voltage corresponding to the current, transferring charges from the photoelectric conversion unit to the input node, setting voltage of the input node to a second voltage by converting the charges into voltage corresponding to the charges, at the amplifier unit, outputting a first signal based on the first voltage and a second signal based on the second voltage, performing the logarithmic compression by using a diode connected to the input node, and acquiring, as a reference signal, an output of the amplifier unit when the input node is set to a third voltage defined in accordance with a threshold voltage of the diode.

Abstract: A solid state imaging device includes: a pixel array unit that has a plurality of pixels 2-dimensionally arranged in a matrix and a plurality of signal lines arranged along a column direction; A/D conversion units that are provided corresponding to the respective signal lines and convert an analog signal output from a pixel through the signal line into a digital signal; and a switching unit that switches or converts the analog signal output through each signal line into a digital signal using any of an A/D conversion unit provided corresponding to the signal line through which the analog signal is transmitted, and an A/D conversion unit provided corresponding to a signal line other than the signal line through which the analog signal is transmitted.

Abstract: The present disclosure relates to a solid state imaging device and an electronic device from which a holding unit for holding information in a pixel can be eliminated. When a charge distribution unit distributes a pixel signal SIG to a first ADC, a pixel signal representing only reflection light is divided for allocation. When the charge distribution unit distributes a pixel signal SIG to a second ADC, a pixel signal representing background light and reflection light (partial) is divided for allocation. When the charge distribution unit distributes a pixel signal SIG to a third ADC, a pixel signal representing background light and reflection light (the rest) is divided for allocation. During a period in which no signal is acquired, a discharge transistor functions as an overflow portion for releasing electrical charge. The present disclosure can be applied to, for example, a solid state imaging device used for an imaging device.

Abstract: An electronic device according to various embodiments of the present invention comprises an image sensor and a processor, wherein the image sensor comprises a microlens and a light-receiving sensor pixel capable of converting light having passed through the microlens into an electrical signal, the light-receiving sensor pixel comprises a first floating diffusion area and a second floating diffusion area, the light-receiving sensor pixel is set, as a first area and a second area having different sizes, in accordance with the activation of either the first floating diffusion area or the second floating diffusion area, a signal generated by the light-receiving sensor pixel can be classified and read out as a first signal corresponding to the first area and a second signal corresponding to the second area, and the processor can be set so as to: use the image sensor so as to activate the first floating diffusion area, thereby acquiring a first image of an external object; use the image sensor so as to activate the

Abstract: An imaging device includes: a first imaging cell including a first photoelectric converter that generates a first signal by photoelectric conversion, and a first signal processing circuit that is electrically connected to the first photoelectric converter and detects the first signal; and a second imaging cell including a second photoelectric converter that generates a second signal by photoelectric conversion, and a second signal processing circuit that is electrically connected to the second photoelectric converter and detects the second signal. Sensitivity of the first imaging cell is higher than sensitivity of the second imaging cell. The first signal processing circuit has a circuit configuration different from the second signal processing circuit. An operation frequency of the first signal processing circuit is different from an operation frequency of the second signal processing circuit.

Abstract: Photo receiver circuits comprising photo diode, a first amplifier, a second amplifier, and a feedback resistor are disclosed. The photo diode receives a light signal producing a photo current and the circuit produces an output voltage proportional to the photo current. In one example, the second amplifier coupled across the photo diode provides a voltage level shift between the input terminal and the output terminal, bootstrapping the parasitic capacitance out.

Abstract: A solid-state image pickup device includes: comparators; counters; and a control portion for carrying out control in such a way that in a phase of an addition mode, the two comparators and the two counters corresponding to the two pixel columns, respectively, are set as a unit, 1 is added to a second digit of one counter of the two counters when both the comparison results from the two comparators has a first logic, 1 is added to a first digit of the one counter when one of the comparison results from the two comparators has the first logic, and 1 is added to none of the first digit and the second digit of the one counter when both the comparison results from the two comparators has a second logic.

Abstract: A display panel includes a control module, and an active pixel sensor array connected to the control module. The active pixel sensor array includes multiple pixel circuits arranged in multiple rows. The pixel circuit includes: a photoelectric conversion module, a signal output terminal, a voltage control terminal, a gating module, and a pre-discharging module. The control module is configured to control the gating module in a current row to turn on, read a voltage signal outputted from the signal output terminal in the current row, generate a reference voltage signal according to the voltage signal, before the gating module in a next row is turned on, output the reference voltage signal to the voltage control terminal in the next row, and control the pre-discharging module in the next row to turn on.

Abstract: An image sensor includes a transistor, at least one storage capacitor and a voltage provider. The at least one storage capacitor is connected to the transistor. The voltage provider is electrically connected to the transistor and configured to provide an extra voltage for the at least one storage capacitor. The extra voltage is variable in response to images with different brightness. The image sensor includes the voltage provider to provide extra voltage to increase the charging capacity of the storage capacitor. The Signal-Noise-Ratio of the image sensor won't be affected and the fill factor is able to be maintained at a certain level.

Abstract: An image sensor including pixels, each pixel including a photodetector and a circuit for reading out the quantity of charges collected by the photodetector at the end of a phase of charge collection by the photodetector. The image sensor further includes, for at least one of the pixels, a detection circuit capable, at least at two different times during the phase, of detecting whether the quantity of charges collected at the time by the photodetector of the pixel exceeds a threshold and, in the case where the quantity of charges collected at the time exceeds the threshold, of storing a first signal representative of the time and of resetting the photodetector.

Abstract: A method for light-to-frequency conversion comprises generating a photocurrent by means of a photodiode and converting the photocurrent into a digital comparator output signal in a charge balancing operation depending on a first clock signal. From the digital comparator output signal an asynchronous count is determined and comprises an integer number of counts depending on the first clock signal. From the digital comparator output signal a fractional time count is determined and depends on a second clock signal. Finally, from the asynchronous count and from the fractional time count a digital output signal is calculated which is indicative of the photocurrent generated by the photodiode. The method may be carried out by an exemplary light-to-frequency converter equipped with a photodiode.

Abstract: Disclosed is an image sensor including pixels, and an analog digital converter configured to select output values of the pixels using an analog multiplexer and to simultaneously perform a convolution operation and conversion into a digital signal using a delta-sigma ADC. The size of processed data is reduced, and power consumption is reduced, and thus the image sensor is advantageously applied to a portable device.

Abstract: An image sensor includes first photodiodes sharing a first node that is connected to a first capacitor, second photodiodes sharing a second node that is connected to a second capacitor, a common transistor configured to selectively connect a third node to a pixel voltage node, the third node connected to a third capacitor, a first reset transistor that may selectively connect the first node to the third node, and a second reset transistor that may selectively connect the second node to the third node. The first reset transistor and the second reset transistor may electrically connect the first node, the second node, and the third node to each other according to an operation of the first reset transistor and the second reset transistor. The common transistor is configured to reset the third node to the pixel voltage according to an operation of the common transistor.

Abstract: A pixel circuit includes a photodiode disposed in a semiconductor material layer to accumulate image charge in response to light incident upon the photodiode. A charge collection gate is coupled to the photodiode. The charge collection gate is disposed over the photodiode to generate an inversion layer in the semiconductor material layer under the charge collection gate to collect the image charge from the photodiode. A first transfer gate is disposed proximate to the charge collection gate, wherein the first transfer gate is coupled to transfer the image charge from in the inversion layer in response to a first transfer signal.

Abstract: An imaging device comprises a first pixel. The first pixel includes a photoelectric conversion element to convert incident light into electric charge, and a first transfer element and a second transfer element to transfer the electric charge. The first transfer element is coupled between the photoelectric conversion element and the second transfer element. The first pixel includes a reset element coupled to the second transfer element, a floating diffusion, and an amplification element coupled to the floating diffusion to amplify a voltage of the floating diffusion. The floating diffusion is coupled between the second transfer element the amplification element.

Abstract: The present technique relates to a solid-state imaging device, a solid-state imaging device manufacturing method, and an electronic apparatus that are capable of providing a solid-state imaging device that can prevent generation of RTS noise due to miniaturization of amplifying transistors, and can achieve a smaller size and a higher degree of integration accordingly. A solid-state imaging device includes a photodiode as a photoelectric conversion unit, a transfer gate that reads out charges from the photodiode, a floating diffusion from which the charges of the photodiode are read by an operation of the transfer gate, and an amplifying transistor connected to the floating diffusion. More particularly, the amplifying transistor is of a fully-depleted type. Such an amplifying transistor includes an amplifier gate (gate electrode) extending in a direction perpendicular to convex strips formed by processing a surface layer of a semiconductor layer, for example.

Abstract: A time-of-flight pixel array comprises multiple pixel cells. The pixel cell comprises a light collection region, a light shielded region, and a deep trench isolation (DTI) structure that encircles the light collection region to prevent light from entering the light shielded region. Photogate in the light collection region is disposed above a photodiode to accumulate the photo-generated electrical charges. A doped region disposed near the photogate collects the attracted charges. The doped region extends to the light shielded region and transfers the collected charges to a floating diffusion through a shutter transistor also in the light shielded region. DTI or similar structures are deployed to the entire pixel array to prevent light from exchanging between different light collection regions and light from entering the light shielded regions of all pixel cells. Interference between the shielded regions of different pixel cells is also minimized.

Abstract: An image sensor includes a substrate including a pixel region and a pad region, a first conductive pad on the substrate in the pad region, a micro lens layer on the substrate in the pixel region, and a first protective pattern covering the pad region and exposing the first conductive pad. The first protective pattern and the micro lens layer include the same material, and the first protective pattern and the micro lens layer are apart from each other.

Abstract: In a photoelectric conversion apparatus, an amplification unit outputs a first amplified signal generated by amplifying a first signal using a first gain, a second amplified signal generated by amplifying the first signal using a second gain, a third amplified signal generated by amplifying a second signal using a third gain, and a fourth amplified signal generated by amplifying the second signal using a fourth gain to an analog to digital (AD) conversion unit in this order. The AD conversion unit generates first to fourth digital signals corresponding to the first to fourth amplified signals, respectively, and outputs the second digital signal and the third digital signal to an output unit prior to the first digital signal and the fourth digital signal.

Abstract: The present technology relates to a comparator circuit, a solid-state imaging apparatus, and an electronic device which enable to improve a frame rate. A comparator compares an analog signal with a reference signal, an amplification stage amplifies output of a comparing unit and has different output change speeds in normal rotation and in reverse rotation, and a switch circuit fixes an input node or an output node of the amplification stage to a predetermined voltage in a predetermined period before a comparing operation by the comparator so that the amplification stage operates in a change direction having a higher output change speed. The present technology can be applied to a comparator circuit provided to an A/D converter of a CMOS image sensor.

Abstract: A solid-state image-capturing device includes a pixel array including a plurality of pixel circuits arranged in rows and columns. Each pixel circuit includes: a photoelectric conversion element that generates an electric charge through photoelectric conversion between a bias terminal and a first node, and amplifies the electric charge according to a bias voltage applied via the bias terminal and the first node; a transfer circuit that electrically connects the first node to a second node according to a first control signal; a reset circuit that applies a reset voltage to the second node according to a second control signal; an output circuit that reads out a voltage of the second node according to a third control signal; and an analog memory that is electrically connected to the second node according to a fourth control signal.

Abstract: Disclosed are devices, systems and methods for capturing an image. In one aspect an electronic camera apparatus includes an image sensor with a plurality of pixel regions. The apparatus further includes an exposure controller. The exposure controller determines, for each of the plurality of pixel regions, a corresponding exposure duration and a corresponding exposure start time. Each pixel region begins to integrate incident light starting at the corresponding exposure start time and continues to integrate light for the corresponding exposure duration. In some example embodiments, at least two of the corresponding exposure durations or at least two of the corresponding exposure start times are different in the image.

Abstract: An image-capturing device includes: a plurality of pixels, having a plurality of first electrodes provided upon one surface of a light reception unit that receives incident light, and a plurality of second electrodes provided upon another surface of the light reception unit; and an output unit that outputs a signal generated by the light reception unit upon receipt of the incident light, the light reception unit being sandwiched between the first electrodes, to which a voltage is applied, and the second electrodes.

Abstract: Devices and methods of their fabrication for pixels or displays are disclosed. Pixels and displays having redundant subpixels are described. Subpixels are initially isolated by an unprogrammed antifuse. A subpixel is connected to the display by programming the antifuse, electrically connecting it to the pixel or display. Defective subpixels can be determined by photoluminescent testing or electroluminescent testing, or both. A redundant subpixel can replace a defective subpixel before pixel or display fabrication is complete.

Abstract: An electronic apparatus includes: an input unit that inputs data for imaging conditions for each of a plurality of imaging regions included in an image capturing unit, different imaging conditions being set for each of the imaging regions; and a recording control unit that correlates the data for imaging conditions inputted from the input unit with the imaging regions and records correlated data in a recording unit.

Abstract: The present disclosure relates to an imaging device, a driving method, and an electronic apparatus that can capture an image with a higher dynamic range. The imaging device includes a pixel region in which pixels are arranged, the pixels each including a photoelectric conversion unit that converts incident light into electric charges through electric conversion and stores the electric charges, and two or more charge storage units that store the electric charges transferred from the photoelectric conversion unit; and a drive unit that drives the pixels. The drive unit drives each pixel to cause the photoelectric conversion unit to repeatedly transfer electric charges with different exposure times to the two or more charge storage units during the light reception period of one frame. The present technology can be applied to an imaging device capable of capturing an HDR image, for example.

Abstract: Provided is an image processing apparatus including: a wide dynamic range (WDR) image sensor configured to output image frames by photographing a subject with different shutter times; and at least one processor to implement: a wide image synthesis unit configured to synthesize a WDR image based on n subchannels included in each of the image frames; a knee curve generating unit configured to generate an integral histogram of luminance levels of m×n subchannels included m image frames among the image frames, and generate a knee curve based on the integral histogram, where m and n each is an integer greater than zero; and a dynamic range transforming unit configured to reduce a dynamic range of the WDR image based on the generated knee curve.