Abstract: An exposure apparatus includes a measuring member disposed in a substrate stage for holding the substrate, at a side of a surface holding the substrate of a substrate stage, an auxiliary member disposed at a side of the surface of the substrate stage, with a gap with the measuring member, and a sealing member contacting a surface of the auxiliary member, disposed to cover the gap, and for suppressing penetration of the liquid locating on a surface of the measuring member, or the surface of the auxiliary member into the gap, and wherein the sealing member has a shape forming a space where a part of the surface of the measuring member contacts gas, while the liquid is on the surface of the measuring member and the liquid contacts an edge of the sealing member.

Abstract: An image forming apparatus is provided in which, in receiving a job and processing an image, a central processing unit (CPU) that can be cooled by a cooling unit to which electric power is supplied from a power supply unit controls a printing unit. The CPU, after a power state of the image forming apparatus is shifted to a second power state lower in power consumption than a first power state, recognizes that a receiving unit has received a job for returning from the second power state to the first power state. Then, the CPU performs adjustment such that start timing for supplying electric power from the power supply unit to the cooling unit is delayed.

Abstract: A lithographic projection apparatus includes a support structure configured to hold a patterning device, the patterning device configured to pattern a beam of radiation according to a desired pattern; a substrate table configured to hold a substrate; a projection system configured to project the patterned beam onto a target portion of the substrate; a liquid supply system configured to provide liquid to a space between the projection system and the substrate; and a shutter configured to isolate the space from the substrate or a space to be occupied by a substrate.

Abstract: A liquid immersion device that has an mixing mechanism that mixes and dissolves a predetermined substance for adjusting specific resistance of the liquid, which is supplied onto a liquid repellent film on the surface of an object (member) of a projection optical system placed on the light emitting side of projection optical system, and an liquid immersion area is formed by supplying the liquid in which the predetermined liquid is dissolved onto the liquid repellent film.

Abstract: An immersion liquid confinement apparatus confines an immersion liquid in an immersion area that includes a gap between a projection system and an object of exposure in an immersion lithography system. The apparatus also recovers the immersion liquid from the immersion area. The apparatus includes an aperture through which a patterned image is projected, an outlet, a first chamber into which the immersion liquid is recovered through the outlet, and a second chamber into which the immersion liquid is recovered through a porous member from the first chamber. The porous member has a first surface contacting the first chamber and a second surface contacting the second chamber. A vertical position of a first portion of the first surface is different from a vertical position of a second portion of the first surface.

Abstract: An exposure method comprises a calculation step of calculating a correction amount of a correction unit which corrects a change in imaging characteristics of a projection optical system based on at least one of parameters including a numerical aperture and effective light source of an illumination optical system, a numerical aperture of the projection optical system, and a size and pitch of a pattern, and an amount of change in environment condition in the projection optical system; and a correction step of making the correction unit operate in accordance with the correction amount calculated in the calculation step.

Abstract: A lithographic apparatus includes a first table to support a substrate; a second table, not being configured to support a substrate, including a sensor unit to sense a property of a patterned beam of radiation from a projection system, the second table to move under the projection system when the first table is moved out from under the projection system during a substrate exchange, the first and second tables being independently movable from each other; and a liquid supply system to supply a liquid to a space between the projection system and the substrate, the first table, and/or the second table, wherein the second table is configured to provide a confining surface at a bottom of a liquid confinement structure when the first table is removed from under the projection system so as to prevent the liquid from leaking out into the remainder of the lithographic apparatus.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: An apparatus and method provide fluid for immersion lithography. A nozzle member that can move in a direction, is arranged to encircle a space under the optical element. The nozzle member can have an input to supply the immersion liquid to the space under the optical element during the exposure, and an output to remove the immersion liquid from a gap between the nozzle member and the wafer during the exposure. Immersion liquid can be supplied at a first rate to the space from a first portion of the nozzle member and at a second rate to the space from a second portion during the exposure. A wafer substrate is exposed by light through the immersion liquid.

Abstract: A liquid immersion exposure apparatus in which a substrate is exposed with an exposure beam, includes a projection optical system by which the substrate is exposed to the exposure beam, a first inlet disposed at a first position, which is capable of supplying a first liquid to a space adjacent to a bottom surface of the projection optical system, and a second inlet disposed at a second position which is different from the first position, the second inlet being capable of supplying a second liquid that is different from the first liquid to the space.

Abstract: A method of projecting a pattern from a patterning device onto a substrate using a projection system, the method including using an optical phase adjustment apparatus in the projection system to apply a phase modification to radiation which has been diffracted from an assist feature of the pattern, the phase modification acting to reduce the size of an assist feature image exposed in resist on the substrate or prevent printing of the assist feature image in the resist on the substrate, while maintaining a contribution of the assist feature image to an image enhancement of a functional feature of the pattern.

Abstract: An exposure apparatus and method exposes a substrate via a projection optical system and a liquid supplied to an immersion area below the projection optical system. First and second movable members move below the projection optical system. The first movable member has a mount area that mounts a substrate located in a hole of an upper surface of the first movable member. The upper surface outside the hole can maintain at least a part of the immersion area outside the substrate mounted in the hole. A drive system drives the first and second movable members to move the first and second movable members below the projection optical system relative to the liquid immersion region to replace one member positioned below the projection optical system with the other member such that the liquid immersion area is maintained below the projection optical system.

Abstract: An apparatus for fabricating a substrate includes a chamber providing a space in which processes are performed, a contaminant measurement substrate including a base material configured to collect contaminants, and laser marks on the base material and defining coordinates of the base material, a first stage disposed inside the chamber, and upon which the contaminant measurement substrate is seated during collection of the contaminants of the chamber, a second stage disposed outside the chamber, and upon which the contaminant measurement substrate is seated during measurement of the contaminants of the chamber collected on the contaminant measurement substrate, and a contaminant measurement light source disposed on an upper portion of the second stage and configured to irradiate the contaminant measurement substrate seated on the second stage with light during the measurement of the contaminants of the chamber collected on the contaminant measurement substrate.

Abstract: A shape defect in a transfer pattern formed over the major surface of a substrate is prevented by using an immersion exposure method. When exposure light is radiated onto a resist, immersion water is held in a first immersion area between each of the lower surfaces of an optical element of a projection optical system and a nozzle portion, and a resist; and when a focus, optical system alignment, or the like, is regulated, the immersion water is held in a second immersion area between each of the lower surfaces of the optical element of the projection optical system and the nozzle portion, and the upper surface of a measurement stage. A transverse spread of the immersion water held in the first immersion area is made smaller than that of the immersion water held in the second immersion area.

Abstract: The exposure apparatus includes a purge member that includes a humidifier that humidifies supplied gas; a first regulator that regulates a flow rate of first gas which passes through the humidifier; a second regulator that regulates a flow rate of second gas which does not pass through the humidifier; a variable instrument that varies a humidifying performance of the humidifier; a sensor; and a controller. Here, the controller controls the first and the second regulators to adjust a flow rate ratio of the first gas and the second gas on the basis of the humidity of the humidified gas detected by the sensor and a pre-set target humidity, and controls the variable instrument to keep the flow rate of the first gas constant on the basis of an amount of operation of the first regulator and an amount of pre-set target operation.

Abstract: A fluid handling structure for a lithographic apparatus is disclosed, the fluid handling structure successively has, at a boundary from a space configured to contain immersion fluid to a region external to the fluid handling structure: an elongate opening or a plurality of openings arranged in a first line that, in use, are directed towards a substrate and/or a substrate table configured to support the substrate; a gas knife device having an elongate aperture in a second line; and an elongate opening or a plurality of openings adjacent the gas knife device.

Abstract: An exposure apparatus which prevents the damage due to the liquid having flowed out from spreading and enables satisfactory performances of the exposure processes and the measurement processes is provided. An exposure apparatus (EX) includes a movable table (PT), a base member (41) having an upper surface (41A) that guides the movement of the table (PT), and a detecting device (60) that detects whether there is a liquid on the upper surface (41A) of the base member (41).

Abstract: New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials having a water contact angle that can be changed by treatment with base and/or one or more materials that comprise fluorinated photoacid-labile groups and/or one or more materials that comprise acidic groups spaced from a polymer backbone. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Abstract: Described herein is a method for simulating a three-dimensional spatial intensity distribution of radiation formed within a resist layer on a substrate resulting from an incident radiation, the method comprising: calculating an incoherent sum of forward propagating radiation in the resist layer and backward propagating radiation in the resist layer; calculating an interference of the forward propagating radiation in the resist layer and the backward propagating radiation in the resist layer; and calculating the three-dimensional spatial intensity distribution of radiation from the incoherent sum and the interference.

Abstract: Embodiments of a drain in a lithographic projection apparatus are described that have, for example, a feature which reduces inflow of gas into the drain during a period when no liquid is present in the drain. In one example, a passive liquid removal mechanism is provided such that the pressure of gas in the drain is equal to the ambient gas pressure and in another embodiment a flap is provided to close off a chamber during times when no liquid needs removing.

Abstract: A fluid handling structure for a lithographic apparatus, the fluid handling structure having, at a boundary from a space configured to contain immersion fluid to a region external to the fluid handling structure: a meniscus pinning feature to resist passage of immersion fluid in a radially outward direction from the space; and a plurality of gas supply openings in a linear array at least partly surrounding and radially outward of the one or more meniscus pinning features, wherein the plurality of gas supply openings in a linear array are of a similar or the same size.

Abstract: A projection optical system including a unity magnification reflecting optical system which forms an intermediate image of an object positioned on an object plane. The reflecting optical system includes a first mirror which reflects light emitted from the object plane, an optical system which reflects the light from the first mirror, and a second mirror which reflects the light from the optical system toward a forming position of the intermediate image. The first mirror, the second mirror and the optical system are positioned so as to satisfy a condition in which a distance between a position of reflection of the light on the second mirror and the forming position of the intermediate image is smaller than a distance between a position of reflection of the light on the first mirror and the object plane.

Abstract: An immersion lithographic apparatus is disclosed that includes a fluid handling system configured to confine immersion liquid to a localized space between a final element of a projection system and a substrate and/or table and a gas supplying device configured to supply gas with a solubility in immersion liquid of greater than 5×10?3 mol/kg at 20° C. and 1 atm total pressure to an area adjacent the space.

Abstract: An immersion lithographic apparatus has adaptations to prevent or reduce bubble formation in one or more gaps in the substrate table by preventing bubbles escaping from the gap into the beam path and/or extracting bubbles that may form in the gap.

Abstract: In one embodiment of the present invention, there is provided a gas gauge for use in a vacuum environment having a measurement gas flow channel. The gas gauge may comprise a measurement nozzle in the measurement gas flow channel. The measurement nozzle may be configured to operate at a sonically choked flow condition of a volumetric flow being sourced from a gas supply coupled to the measurement gas flow channel. The gas gauge may further comprise a pressure sensor operatively coupled to the measurement gas flow channel downstream from the sonically choked flow condition of the volumetric flow to measure a differential pressure of the volumetric flow for providing an indication of a gap between a distal end of the measurement nozzle and a target surface proximal thereto.

Abstract: A liquid immersion member forms a liquid immersion space between the member and a movable object such that an optical path of exposure light is filled with liquid. The liquid immersion member includes: a first plate that is disposed at least partially around the optical path; a second plate that is disposed at least partially around the optical path, and has an upper surface, opposed to at least a part of a lower surface of the first plate, and a lower surface which can be opposed to the object; and a collection port that is disposed outside the first plate with respect to the optical path, can be at least partially opposed to the object, and collects at least some of the liquid from a first space, which the upper surface of the second plate faces, and a second space which the lower surface of the second plate faces.

Abstract: A seal between a table and a component in a lithographic apparatus is disclosed. The seal bridges a gap between the component and the table when the component is in a position relative to the table. The component is moveable, in use, relative to the table and in an embodiment is attached to the table. The seal may be integral with the component or the table.

Abstract: Liquid is supplied to a space between the projection system of a lithographic apparatus and a substrate. A flow of gas towards a vacuum inlet prevents the humid gas from escaping to other parts of the lithographic apparatus. This may help to protect intricate parts of the lithographic apparatus from being damaged by the presence of humid gas.

Abstract: A lithographic apparatus includes a projection system configured to project a patterned radiation beam onto a target portion of a substrate. The projection system has a final element. The apparatus also includes a barrier member surrounding a space between the projection system and, in use, the substrate, to define in part with the final element a reservoir for liquid. The barrier member is spaced from the final element to define a gap therebetween. The apparatus further includes a deformable seal between a radially outer surface of the final element and a radially outer surface of the barrier member. The deformable seal is configured to substantially prevent a gas from flowing past the seal towards or away from the reservoir of liquid.

Abstract: An immersion lithography apparatus that includes a substrate holder on which a substrate is held, a projection system having a final optical element and that projects an exposure beam onto the substrate through an immersion liquid, and a liquid confinement member having an aperture through which the exposure beam is projected, a lower surface including a non-fluid removal area surrounding the aperture, and a liquid recovery outlet from which the immersion liquid is recovered, also includes a movable member. The movable member is movable relative to the liquid confinement member in a substantially horizontal direction, and has an opening through which the exposure beam is projected. The movable member has upper and lower surfaces that surround the opening, and is movable while a portion of the upper surface faces the non-fluid removal area in the lower surface of the liquid confinement member.

Abstract: A lithographic projection apparatus is disclosed that includes a table, a shutter member, a fluid handling structure, and a fluid extraction system. The fluid handling structure may be configured to supply and confine liquid between a projection system and (i) a substrate, or (ii) the table, or (iii) a surface of the shutter member, or (iv) a combination selected from (i)-(iii). The surface of the shutter member may adjoin and be co-planar with a surface of the table. The surfaces of the shutter member and the table may be spaced apart by a gap. The fluid extraction system may be configured to remove liquid from the gap.

Abstract: Chucks for mounting and retaining semiconductor wafers during processing are described, particularly suited for wafer processing involving total immersion of the wafer-chuck structure in a liquid. Chuck structures are disclosed for preventing or hindering processing chemicals from contacting and contaminating large portions of the underside of the wafer undergoing processing, limiting such chemical contact to readily cleaned, relatively small annular regions on the periphery of the wafer. Embodiments include structures with supplemental gas flows on the underside of the wafer as well as the creation of gas/liquid meniscusci to prevent chemical penetration of the wafer's underside. Methods of processing semiconductor wafers employing such chucks are also described.

Abstract: A microlithographic projection exposure apparatus comprises a projection objective which images an object onto an image plane and has a lens with a curved surface. In the projection objective there is a liquid or solid medium which directly adjoins the curved surface over a region which is usable for imaging the object. The projection exposure apparatus also has an adjustable manipulator for reducing an image field curvature which is caused by heating of the medium during the projection operation.

Abstract: An exposure apparatus that includes a projection optical system, and exposes a substrate to light via the projection optical system and a liquid that is supplied between the projection optical system and the substrate. A plurality of recovery ports recover the liquid supplied between the projection optical system and the substrate, and are discretely arranged between vertices on each side of a polygon and at each of the vertices of the polygon. A chamber, connected to the plurality of recovery ports, receives the liquid. A pump attracts the liquid via the plurality of recovery ports and the chamber. A pressure difference between the pump and each of the recovery ports positioned at the vertices, among the plurality of recovery ports, is less than a pressure difference between the pump and each of the recovery ports positioned between the vertices, among the plurality of recovery ports.

Abstract: An immersion lithographic apparatus is cleaned by use of a cleaning liquid consisting essentially of ultra-pure water and (a) a mixture of hydrogen peroxide and ozone, or (b) hydrogen peroxide at a concentration of up to 5%, or (c) ozone at a concentration of up to 50 ppm, or (d) oxygen at concentration of up to 10 ppm, or (e) any combination selected from (a)-(d).

Abstract: A model-based tuning method for tuning a first lithography system utilizing a reference lithography system, each of which has tunable parameters for controlling imaging performance. The method includes the steps of defining a test pattern and an imaging model; imaging the test pattern utilizing the reference lithography system and measuring the imaging results; imaging the test pattern utilizing the first lithography system and measuring the imaging results; calibrating the imaging model utilizing the imaging results corresponding to the reference lithography system, where the calibrated imaging model has a first set of parameter values; tuning the calibrated imaging model utilizing the imaging results corresponding to the first lithography system, where the tuned calibrated model has a second set of parameter values; and adjusting the parameters of the first lithography system based on a difference between the first set of parameter values and the second set of parameter values.

Abstract: An immersion lithographic apparatus has adaptations to prevent or reduce bubble formation in one or more gaps in the substrate table by preventing bubbles escaping from the gap into the beam path and/or extracting bubbles that may form in the gap.

Abstract: A temperature sensing probe including a temperature sensor in an elongate housing wherein the elongate housing of the probe is elongate in a first direction and the elongate housing is comprised of a material which has a thermal conductivity of at least 500 W/mK at 20° C. in at least one direction.

Abstract: An optical arrangement in an optical system, such as a microlithographic projection exposure apparatus, includes: at least one heat-emitting subsystem which emits heat during the operation of the optical system; a first heat shield which is arranged such that it at least partly absorbs the heat emitted by the heat-emitting subsystem; a first cooling device which is in mechanical contact with the first heat shield and is designed to dissipate heat from the first heat shield; and a second heat shield which at least partly absorbs heat emitted by the first heat shield. The second heat shield is in mechanical contact with a cooling device that dissipates heat from the second heat shield.

Abstract: An optical module includes a chamber capable of being evacuated and a mirror in the chamber. The mirror includes a plurality of individual mirrors. Each individual mirror includes: a mirror body including a reflection face; a support structure; and a thermally conductive portion that mechanically connects the support structure to the mirror body. For at least one individual mirror, the thermally conductive portion includes a plurality of thermally conductive strips arranged radially, adjacent thermally conductive strips being separated from each other, and each of the plurality of thermally conductive strips connecting the mirror body to the support structure. For at least one individual mirror, an actuator is associated with the mirror body, the actuator being configured to displace the mirror body relative to the support structure in at least one degree of freedom.

Abstract: A sample, which has a mesa portion having a pattern thereon, is placed on a Z table. Light is irradiated to the mesa portion through an optical system and light reflected by the mesa portion is received to measure a height of the mesa portion. A height map of the mesa portion is created based on a height of a corner position. A height using the height map is corrected based on a deviation of a measured value from a target value, and a temporal variation of a focal position of light irradiated to the mesa portion. An optical image of the pattern is obtained based on the corrected height of the mesa portion. The optical image is compared with a reference image and a defect is determined when a difference value between the optical image and the reference image is more than a predetermined threshold value.

Abstract: A lithographic apparatus and device manufacturing method makes use of a liquid confined in a reservoir between the projection system and the substrate. Bubbles forming in the liquid from dissolved atmospheric gases or from out-gassing from apparatus elements exposed to the liquid are detected and/or removed so that they do not interfere with exposure and lead to printing defects on the substrate. Detection may be carried out by measuring the frequency dependence of ultrasonic attenuation in the liquid and bubble removal may be implemented by degassing and pressurizing the liquid, isolating the liquid from the atmosphere, using liquids of low surface tension, providing a continuous flow of liquid through the imaging field, and/or phase shifting ultrasonic standing-wave node patterns.

Abstract: An electrical field is applied through an extreme ultraviolet (EUV) photoresist layer along a direction perpendicular to an interface between the EUV photoresist layer and an underlying layer. Secondary electrons and thermal electrons are accelerated along the direction of the electrical field, and travel with directionality before interacting with the photoresist material for a chemical reaction. The directionality increases the efficiency of electron photoacid capture, reducing the required EUV dose for exposure. Furthermore, this directionality reduces lateral diffusion of the secondary and thermal electrons, and thereby reduces blurring of the image and improves the image resolution of feature edges formed in the EUV photoresist layer. The electrical field may be generated by applying a direct current (DC) and/or alternating current (AC) bias voltage across an electrostatic chuck and a conductive plate placed over the EUV photoresist layer with a hole for passing the EUV radiation through.

Abstract: Asymmetric heating and/or thermal expansion of a reticle or an image field is reduced. Embodiments include exposing a wafer with an actual image field (including a pattern for a chip layer) on a multilayer reticle, and performing a dummy exposure with another image field of the reticle. Other embodiments include exposing a wafer with a reticle area including both the actual and one or more other image fields of a multilayer reticle, sacrificing any die on the wafer that is exposed with substantial illumination with an image field other than the actual image field. Further embodiments include dummy exposures or enlargement of the illuminated reticle area of a single layer reticle with variation in pattern density between regions of the image field. Further embodiments include changing the image field geometry of a multilayer or single layer reticle.

Abstract: In a lithographic projection apparatus, a structure surrounds a space between the projection system and a substrate table of the lithographic projection apparatus. A gas seal is formed between said structure and the surface of said substrate to contain liquid in the space.

Abstract: A sensor for sensing contamination in an application system is disclosed. In one aspect, the sensor comprises a capping layer. The sensor is adapted to cause a first reflectivity change upon initial formation of a first contamination layer on the capping layer when the sensor is provided in the system. The first reflectivity change is larger than an average reflectivity change upon formation of a thicker contamination layer on the capping layer and larger than an average reflectivity change upon formation of an equal contamination on the actual mirrors of the optics of the system.

Abstract: An immersion lithographic apparatus has adaptations to prevent or reduce bubble formation in one or more gaps in the substrate table by preventing bubbles escaping from the gap into the beam path and/or extracting bubbles that may form in the gap.

Abstract: An exposure apparatus is provided which can supply and collect a liquid in a prescribed state, and that can suppress degradation of a pattern image projected onto a substrate. The exposure apparatus is provided with a nozzle member having a supply outlet that supplies a liquid and a collection inlet that collects a liquid, and a vibration isolating mechanism that supports the nozzle member and vibrationally isolates the nozzle member from a lower side step part of a main column.

Abstract: An optical element unit includes a first optical element module and a sealing arrangement. The first optical element module occupies a first module space and includes a first module component of a first component type and an associated second module component of a second component type. The first component type is optical elements and the second component type being different from the first component type. The sealing arrangement separates the first module space into a first space and a second space and substantially pre-vents, at least in a first direction, the intrusion of substances from one of the first space and the second space into the other one of the first space and the second space. The first module component at least partially contacts the first space and, at least in its area optically used, not contacting the second space. The second module component at least partially contacts the second space.

Abstract: A stage assembly (10) that includes (i) a stage (14) that retains a device (26); (ii) a reaction assembly (18) that is spaced apart from the stage (14); (iii) a stage mover (16) that moves the stage (14), the stage mover (16) including a magnet array (38) that is coupled to the stage (14) and a conductor array (36) that is coupled to the reaction assembly (18); (iv) a temperature adjuster (20); and (v) a control system (22) that selectively controls the temperature adjuster (20). The conductor array (36) includes a set of first zone conductor units (250), and a set of second zone conductor units (252). The temperature adjuster (20) independently adjusts the temperature of the set of first zone conductor units (250), and the set of second zone conductor units (252).