Abstract: An exposure apparatus includes a projection optical system for projecting an exposure pattern, onto an object to be exposed, and a measuring apparatus for measuring, as an interference fringe, optical performance of the projection optical system, wherein the measuring apparatus includes an optical element having opposing first and second surfaces, wherein the first surface has a first measurement pattern, and the second surface has a second measurement pattern and is closer to the projection optical system than the first measurement pattern, and wherein the measuring apparatus introduces light into the projection optical system via first and second measurement patterns.

Abstract: Focus monitoring for a photolithographic applications is provided by illuminating a photoresist layer with a light beam transmitted through a first binary mask to define a circuit pattern on an underlying substrate and then illuminating the photoresist layer with an unbalanced off-axis light beam transmitted through a second binary mask. The second mask contains a shifting feature configuration in one portion, while another portion blocks light transmission to the chip design area of the photoresist. After development of the photoresist layer, the pattern formed by illumination of the second mask can be compared with a predefined reference feature on the photoresist layer to determine whether a shift, if any, is within acceptable focus limits.

Abstract: Methods, systems and apparatus for monitoring the state of a reticle by providing a reticle having a device exposure region in an imaging tool, defining one or more image fields across the device exposure region, and transmitting energy through the device exposure region. A detector detects the energy in the image field(s) at one or more testing intervals and a system control generates a transmission profile of average energy transmissions for each image field. Using this transmission profile, the state of the reticle is then determined at each testing interval followed by taking action based on the reticle state. The state of the reticle identifies whether the device exposure region has been deleteriously degraded, and as such, the reticle is no longer suitable for use. This is accomplished by determining if any average energy transmission of any image field across the reticle exceeds an allowable energy transmission threshold.

Abstract: An amount is flare is measured by a method including steps of applying a photosensitive material to a substrate; exposing a part of the photosensitive material using a mask including a transmitting section which has no pattern so that the part of the photosensitive material varies in thickness; and measuring an amount of flare based on a distribution of film amounts of the photosensitive material remaining in a first region corresponding to the transmitting section and on a second region other than the first region after the step of exposing.

Abstract: An illumination optical system for microlithography is used to guide an illumination light bundle from a radiation source to an object field in an object plane. A field facet mirror has a plurality of field facets to predetermine defined illumination conditions in the object field. A following optical system is arranged downstream of the field facet mirror to transfer the illumination light into the object field. The following optical system has a pupil facet mirror with a plurality of pupil facets. Some of the field facets are divided into individual mirrors, which predetermine individual mirror illumination channels. The latter illuminate object field portions, which are smaller than the object field. At least some of the individual mirrors are configured as individual correction mirrors.

Abstract: A projection objective having a number of adjustable optical elements is optimized with respect to a number of aberrations by specifying a set of parameters describing imaging properties of the objective, each parameter in the set having an absolute value at each of a plurality of field points in an image plane of the projection objective. At least one of the optical elements is adjusted such that for each of the parameters in the set, the field maximum of its absolute value is minimized.

Abstract: A method for determining intensity distribution in the focal plane of a projection exposure arrangement, in which a large aperture imaging system is emulated and a light from a sample is represented on a local resolution detector by an emulation imaging system. A device for carrying out the method and emulated devices are also described. The invention makes it possible to improve a reproduction quality since the system apodisation is taken into consideration. The inventive method includes determining the integrated amplitude distribution in an output pupil, combining the integrated amplitude distribution with a predetermined apodization correction and calculating a corrected apodization image according to the modified amplitude distribution.

Abstract: Provided are a reflective reticle chuck, a reflective illumination system including the chuck, a method of controlling the flatness of a reflective reticle using the chuck, and a method of manufacturing a semiconductor device using the chuck. The reflective reticle chuck includes a fixed portion and a mobile portion that together provide a securing surface for the reflective reticle. The mobile portion may alter a height of the securing surface relative to the fixed portion.

Abstract: An exposure apparatus includes a projection optical system, an original stage having a first reference mark, a substrate stage, and a measurement instrument configured to measure first image properties of a mark formed on the original with the projection optical system, via the original and the projection optical system. The measurement instrument is also configured to measure the properties of a second image with the projection optical system of the first reference mark, via the reference mark and the projection optical system. The exposure apparatus also includes a calculating unit for calculating a first heat change coefficient due to the projection optical system and a second heat change coefficient due to the original, with relation to the properties of images formed by the projection optical system.

Abstract: The disclosure relates to a method for modifying a polarization distribution in a microlithographic projection exposure apparatus, and to a microlithographic projection exposure apparatus. The projection exposure apparatus has an illumination device and a projection objective. The illumination device has an optical axis and a correction arrangement having a lambda/4 plate arranged rotatably about the optical axis and/or a lambda/2 plate arranged rotatably about the optical axis. The method includes determining a polarization distribution in a predetermined plane of the projection exposure apparatus, and rotating the lambda/4 plate and/or the lambda/2 plate about the optical axis so that a local variation of the polarization distribution is reduced after rotation in comparison with the state before the rotating.

Abstract: A system and method are used to compensate for distortions or aberrations in an image formed in a projection system. Pattern data is generated corresponding to features to be formed on a substrate. At least one of aberrations and distortions of a projection optical system are measured. The pattern data is altered based on the measuring step. The altered pattern data is transmitted to a patterning device to control individually controllable elements coupled to the patterning device. Non uniformities in one or both of a field and pupil of an illumination system can also be measured and used to alter the pattern data.

Abstract: An exposure apparatus comprises an illumination optical system configured to illuminate a reticle with a light beam from a light source, a projection optical system configured to project a pattern of the reticle onto a substrate, a measurement unit configured to measure a light quantity distribution in an exposure area on an image plane of the projection optical system, and a detection unit configured to detect an existence of a foreign particle in the illumination optical system and the projection optical system based on the light quantity distribution measured by the measurement unit.

Abstract: An optical assembly supported in an arrangement, especially in an objective or in an illuminating or exposure system, in the interior of a housing comprising at least one optical element, especially a lens, a mirror, or an aperture, wherein the at least one element is influenceable by at least one manipulator is characterized in that the at least one manipulator is arranged either outside of the housing or in a holding means that is separated entirely or to a large extent by the help of a decoupling means, and that there is provided an effective coupling between the manipulator and the element to be influenced by the manipulator in the interior of the arrangement.

Abstract: Projection objective, projection exposure apparatuses and related systems and components are disclosed.

Abstract: An exposure apparatus exposes a substrate by projecting a pattern image onto the substrate via a projection optical system and a liquid. The exposure apparatus includes a liquid supply device which supplies liquid onto the substrate from above the substrate through a first and second supply ports disposed in a vicinity of a projection area onto which the pattern image is projected, and a liquid recovery device which recovers liquid on the substrate from above the substrate through an inside recovery port disposed outside the first and second supply ports and an outside the second recovery port disposed outside the inside recovery port.

Abstract: An immersion lithography method includes forming a resist layer on a substrate to be processed, performing immersion lithography in a state where liquid is locally interposed between the resist layer on the substrate and an optical system of an exposure apparatus, while the substrate and the optical system are relatively moved. In the immersion lithography, multiple exposures are performed for exposure regions in a portion of a surface of the substrate close to a rim of the substrate, and exposures of number of times smaller than the number of exposures of the multiple exposures are performed for exposure regions located inside the exposure regions.

Abstract: The invention relates to a lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate, wherein said apparatus is operable to measure higher-order distortions and/or image plane deviations of the patterning device, said apparatus comprising: a device for transmission image detection; and a processor configured and arranged to model higher-order distortions of the patterning device using signals received from the device for transmission image detection; wherein said patterning device has a main imaging field, and a perimeter and said apparatus is operable to model said higher-order distortions using signals resultant from alignment structures comprised in said perimeter and/or in the imaging field.

Abstract: An exposure apparatus includes a first measurement device, a second measurement device, and a controller. The first measurement device measures the position of a substrate stage in the optical axis direction when the substrate stage is scanned in the first direction. The second measurement device measures the surface positions of the substrate in the optical axis direction at a plurality of measurement points on one straight line extending in the second direction on the substrate. The controller controls the second measurement device to measure at least one identical region on the substrate at different measurement points of the plurality of measurement points both before and after the substrate stage moves in steps in the second direction, and calculates a measurement error of the first measurement device attributed to the driving of the substrate stage in the second direction based on the measurement result obtained by the second measurement device.

Abstract: A method for synchronizing a plurality of series coupled nodes is described. A master trigger is transmitted through the plurality of series coupled local nodes in a downstream direction from a first node to a last node and retransmitted through the plurality of series coupled nodes in an upstream direction from the last node to the first node. Then, a local synchronization time is calculated at each of the plurality of series coupled nodes based on a differential measurement between the arrival of the master trigger in the downstream direction and the upstream direction. Operations in the local nodes may be synchronized based on the local synchronization time.

Abstract: An apparatus for moving a spherical mirror in which at least three actuators move the spherical mirror, at least five position sensors sense the position of the spherical mirror, and a controller calculates coordinates of a center of curvature of the spherical mirror with three-degrees-of-freedom, based on positions sensed by the at least five position sensors. The controller controls driving of the at least three actuators in accordance with a difference between the calculated coordinates and predetermined coordinates, so that the center of curvature of the spherical mirror is held fixed to the predetermined coordinates.

Abstract: Embodiments relate to compensating for lens heating, lithographic projection system and photo mask. Accordingly, lens heating is compensated by providing a layout pattern including a regular pattern being arranged substantially symmetrical in a first region and a sub-resolution pattern including a plurality of sub-resolution structural elements, wherein the sub-resolution pattern in a second region, so as to minimize non-homogenous lens heating of a projection apparatus in case of a lithographic projection.

Abstract: An exposure apparatus includes a projection optical system for projecting light from a reticle onto a substrate, and exposes a shot region of the substrate to radiant energy via the reticle and the projection optical system. The exposure apparatus comprises a substrate stage configured to hold the substrate and to be moved, a console configured to set a valid area inside the shot region, a measuring device configured to measure a position of a surface of the substrate in a direction parallel to an optical axis of the projection optical system, and a controller configured to control a position of the substrate stage based on the position of the surface measured by the measuring device at a measurement point in the valid area set by the console, the measurement point being determined in accordance with a position of the substrate relative to the measuring device.

Abstract: Ellipticity in an illumination beam may be corrected by measuring an ellipticity of the illumination beam and substantially eliminating the ellipticity using a light attenuating filter at a defocus position of the illumination beam, wherein the light attenuating filter has a two-dimensional pattern that compensates for ellipticity variations in the illumination beam. The light attenuating filter may stand alone, or the filter may be combined with a uniformity correction system, such that it corrects both uniformity and ellipticity. In one embodiment, the light attenuating filter is printed with an assembly of microscopic dots according to the two-dimensional pattern.

Abstract: According to certain embodiments, systems comprising an energy source; at least one conjugate mask; a magnification device; and a fabrication material; wherein the at least one conjugate mask is disposed between the energy source and the magnification device; and wherein the fabrication material is disposed operable to the magnification device. According to other embodiments, methods and composition employing such systems.

Abstract: A microlithographic projection exposure apparatus comprises a projection objective which images an object onto an image plane and has a lens with a curved surface. In the projection objective there is a liquid or solid medium which directly adjoins the curved surface over a region which is usable for imaging the object. The projection exposure apparatus also has an adjustable manipulator for reducing an image field curvature which is caused by heating of the medium during the projection operation.

Abstract: Positional information (an estimate value in which a linear component of positional deviation amount is corrected) of each shot on a wafer is calculated by a statistical computation using actual measurement values of positional information of a plurality of sample shots on the wafer (step 488). And, a variation amount of a non-linear component of positional deviation amount is calculated at predetermined intervals with respect to each of a plurality of measurement shots including the sample shots (step 496), and judgment is made about the necessity of update of correction information based on magnitude of the calculated variation amount of a non-linear component of each measurement shot area (step 498). Therefore, comparing with the case when actual values of positional information of all shots on the wafer are obtained at least once in each lot in order to update a correction value, the number of shots subject to positional information measurement and the measurement time can be reduced without fail.

Abstract: The invention relates to a device manufacturing method comprising identifying a substrate to be processed, performing a manufacturing step of a patterned layer on the substrate, and storing a substrate process history for the substrate. The history may comprise a correction map comprising position errors caused by the manufacturing step. Identifying the substrate may be done by reading an identification sign present on the substrate or by reading an identification code of a lot comprising the substrate and determining a sequence number of the substrate in the lot. Alignment of the substrate with respect to a patterning device of a lithographic apparatus may be corrected using information of the substrate process history. Alternatively or additionally, measured overlay errors may be corrected per substrate using information of the substrate process history.

Abstract: An exposure apparatus for exposing a substrate to light during an exposure period. A projection optical system projects light from a pattern of a reticle onto the substrate. The projection optical system includes at least one optical element driven to adjust aberration of the projection optical system. A first calculator calculates compensation data based on a temporal characteristic of heat influence, which represents a change in aberration due to heat influence of the exposure in the projection optical system in accordance with (i) an elapsed time of a non-exposure period from a time when the exposure period shifts to a non-exposure period, and (ii) exposure period data which represents the time when the exposure period shifts to the non-exposure period.

Abstract: An illumination apparatus for illuminating a surface (M) to be irradiated with illumination light emitted from a light source (2) comprises a reflection type fly-eye optical systems (12, 14) disposed between the light source (2) and the surface (M) to be irradiated and constituted by a plurality of reflection partial optical systems for wavefront-dividing a light beam from the light source (2) and superposing divided portions of the light beam onto each other on the surface (M) to be irradiated and a reflection type optical system (10) disposed between the light source (2) and the reflection type fly-eye optical systems (12, 14) for guiding the illumination light to the reflection type fly-eye optical systems (12, 14). The reflection type optical system (10) has a reflecting surface at least partly constructed by a diffusing surface.

Abstract: An alignment method of mask patterns includes forming a first layer by transferring a first mask pattern onto a wafer, forming a second layer by transferring a second mask pattern onto the first layer, and particularly a first alignment step, forming the first layer, which performs alignment for minimizing offset between a center position of the wafer and a center position of the first mask pattern and a residual rotation error between the wafer and the first mask pattern and additional alignment for compensating an amount of possible deviation of superposition of the second layer pattern on the first layer pattern, and a second alignment step, forming the second layer, which performs only alignment for minimizing offset between a center position of the first layer pattern and a center position of the second mask pattern and a residual rotation error between the first layer pattern and the second mask pattern.

Abstract: An electron beam lithography method is provided for sequentially irradiating an electron beam deflected by a deflector on a shot-by-shot basis to draw a pattern on a surface of a sample mounted on a stage. This method includes the step of irradiating the electron beam on the sample surface as a combination of shots each irradiated in one of rectangular or square regions having the same area and different shapes, in order to draw a correction pattern. This method also includes the steps of correcting the shape of the electron beam based on the drawn correction pattern, and drawing a pattern using the shape-corrected electron beam.

Abstract: The invention relates to a method -for improving the imaging properties of a micro lithography projection objective (50), wherein the projection objective has a plurality of lenses (L1, L2, L3, L4, L5, L6, L7, L8) between an object plane and an image plane, a first lens of the plurality of lenses being assigned a first manipulator (ml, Mn) for actively deforming the lens, the first lens being deformed for at least partially correcting an aberration, at least one second lens of the plurality of lenses furthermore being assigned at least one second manipulator, and the second lens being deformed in addition to the first lens. Furthermore, a method is described for selecting at least one lens of a plurality of lenses of a projection objective as actively deformable element, and a projection objective.

Abstract: In a method for improving imaging properties of an illumination system or a projection objective of a microlithographic projection exposure apparatus, which comprises an optical element having a surface, the shape of the surface is measured directly at various points. To this end, a measuring beam is directed on the points, and the reflected or refracted beam is measured, e.g. using an interferometer. Based on deviations of the measured shape from a target shape, corrective measures are derived so that the imaging errors of the optical system are improved. The corrective measures may comprise a change in the position or the shape of the optical element being analyzed, or another optical element of the optical system. The target shape of the surface may, for example, be determined so that the optical element at least partially corrects imaging errors caused by other optical elements.

Abstract: An exposure method has acquiring first OPE (Optical Proximity Effect) error corresponding to a first and second transcriptional pattern portions formed by transcribing a first and second pattern portions of a mask pattern onto a substrate with an exposure apparatus, computing a first correction amount of an exposure condition, the first correction amount reducing the first OPE error, computing a best focus difference between the first transcriptional pattern portion and the second transcriptional pattern portion transcribed with the exposure apparatus to which the first correction amount is imparted, computing a second correction amount of a projection optical system of the exposure apparatus, the second correction amount reducing the best focus difference, acquiring second OPE error corresponding to the first and second transcriptional pattern portions transcribed with the exposure apparatus to which the first and second correction amounts are imparted, and performing exposure processing with the exposure ap

Abstract: A projection objective is disclosed. The projection objective can include a plurality of optical elements arranged to image a pattern from an object field in an object surface of the projection objective to an image field in an image surface of the projection objective with electromagnetic operating radiation from a wavelength band around an operating wavelength ?. The plurality of optical elements can include an optical correction plate that includes a body comprising a material transparent to the operating radiation, the body having a first optical surface, a second optical surface, a plate normal substantially perpendicular to the first and second optical surfaces, and a thickness profile defined as a distance between the first and second optical surfaces measured parallel to the plate normal. The first optical surface can have a non-rotationally symmetric aspheric first surface profile with a first peak-to-valley value PV1>?.

Abstract: The present invention is directed towards a method for determining deformation parameters that a patterned device would undergo to minimize dimensional variations between a recorded pattern thereon and a reference pattern, the method including, inter alia, comparing spatial variation between features of the recorded pattern with respect to corresponding features of the reference pattern; and determining deformation forces to apply to the patterned device to attenuate the dimensional variations, with the forces having predetermined constraints, wherein a summation of a magnitude of the forces is substantially zero and a summation of moment of the forces is substantially zero.

Abstract: A projection optical system of the present invention includes an optical element group that includes optical elements, and a controller that drives at least one of the first optical elements. The optical element group includes aspheric surfaces having a complementary relationship with each other and are arranged so that the aspheric surfaces face each other. The controller changes a relative position between the optical elements in a first direction and a second direction orthogonal to the first direction to control optical performances of the projection optical system corresponding to each of the first direction and the second direction.

Abstract: An exposure apparatus for exposing a wafer to light through a pattern of a mask. The apparatus includes a projection optical system configured to project the pattern onto the wafer, a first barometer configured to measure pressure of an atmosphere in the apparatus, a second barometer configured to measure the pressure at a speed higher than that at which the first barometer measures the pressure, a calibration unit configured to calibrate an output of the second barometer based on an output of the first barometer, and an aberration correction unit configured to correct aberration of the projection optical system based on the calibrated output.

Abstract: Patterning provided by a lithographic apparatus is optically corrected for focus errors that would result from a topology of a substrate being patterned. Focus control is provided in a cross-scan direction by bending a reticle about a scan axis based on a mapped topology of the substrate. The bending can be updated from field to field as the reticle is scanned. The bending may be unidirectional (e.g., down only), but an optical compensation element (e.g., a lens or mirror polished to a cylindrical shape or a transparent plate or mirror bent by a force actuator to a cylindrical shape) can be included in order to introduce either positive or negative curvature (or no curvature) to the beam wavefront, thereby simplifying the mechatronics of the bender.

Abstract: An apparatus which projects a pattern of an original onto a substrate by a projection optical system within a chamber to expose the substrate, comprises a measurement unit which performs measurement to calculate a deformation amount of the original, and a controller which calculates a predicted deformation amount of the original and corrects a projection magnification of the projection optical system so as to correct the predicted deformation amount, based on information representing a relationship between the deformation amount with reference to a shape of the original at a certain temperature and a time for which the original receives exposure light, a deformation amount of the original before exposure determined based on a measurement value obtained by measuring, by the measurement unit, the deformation amount of the original loaded into the chamber and unused for exposure, and the time for which the original receives the exposure light.

Abstract: The disclosure relates to a projection exposure system for microlithography, which includes at least one optical system that has at least one optical element with at least two aspherical surfaces essentially arranged rigidly relative to each other.

Abstract: A lithographic apparatus is disclosed that includes a first gas shower configured to supply a first gas flow to an interior space of the apparatus, and a second gas shower configured to supply a second gas flow to the interior space of the apparatus, the gas showers configured to direct the first gas flow and the second gas flow at least partly towards each other. Also, a method for conditioning an interior space of a device manufacturing apparatus is provided that includes supplying a first conditioned gas flow and a second conditioned gas flow to the interior space, such that the first conditioned gas flow and the second conditioned gas flow are at least partly directed to each other.

Abstract: Plate-image-inspection RIP data CD2, CD3 are prepared using the same RIP processing conditions from two print image data prepared in different steps of the prepress process, and inspection results are obtained by comparing these data CD2, CD3. Plate-image-inspection RIP data CD2, CD3 can be prepared in several methods: (1) a method for RIP processing respective non-RIP data using standard RIP processing conditions; (2) a method for respectively converting two RIP data to standard RIP processing conditions; and (3) a method for converting one of two RIP data such that it conforms to the RIP processing conditions of the other.

Abstract: An apparatus comprises a controller configured to generate a first list of measurement points arranged symmetrically with respect to a center of a shot region along a direction of scanning at a predetermined pitch, and a control by the controller includes a first control which causes a measurement device to measure a position of a surface with respect to each measurement point included in the first list, and a second control which causes the measurement device to measure the position with respect to each measurement point included in a second list obtained by excluding, from the first list, at least one of a measurement point with respect to which measurement is performed last in a first shot region and a measurement point with respect to which measurement is performed first in a second shot region next to the first shot region.

Abstract: A projection exposure apparatus includes an optical element, and projects a pattern formed on a first object onto a second object to be exposed through a projection optical system for correcting imaging characteristics by controlling the optical element. The projection exposure apparatus includes: a displacement measurement unit configured to measure a displacement of the optical element; a storage unit configured to store a measurement criterion of the displacement measurement unit; an imaging characteristics measurement unit configured to measure imaging characteristics of the projection optical system; and a calibration unit configured to calibrate the measurement criterion based on a result of measurement by the imaging characteristics measurement unit.

Abstract: A mask for a lithographic apparatus is disclosed, the mask having a patterned region bearing a pattern to be transferred onto a substrate and a border surrounding the patterned region, wherein at least part of the border has a plurality of elements, the dimensions of the elements being such that, during use, they would not be resolved at the substrate. Also, a lithographic apparatus is disclosed, the apparatus having a projection system, a substrate table arranged to hold a substrate, and a patterning device having a patterned region which bears a pattern to be transferred using a radiation beam via the projection system onto the substrate, at least part of a border surrounding the patterned region comprising a plurality of elements arranged to direct radiation onto the substrate, the dimensions of the elements such that, during use, they are not resolved at the substrate.

Abstract: A substrate support system for process tools, such as lithography tools, comprises a configuration in which a local height level adjustment may be accomplished. Thus, upon detecting a non-allowable height level, the corresponding portion of the substrate support surface may be re-adjusted. Hence, the focus conditions of advanced exposure processes may be significantly enhanced, thereby providing superior process results and also increasing tool utilization.

Abstract: The invention provides a method for correcting thermally-induced field deformations of a lithographically exposed substrate. First, a model is provided to predict thermally-induced field deformation information of a plurality of fields of the substrate. The pre-specified exposure information used to configure an exposure of the fields is then modified based on the thermally-induced deformation information as predicted by the model. Finally a pattern is exposed onto the fields in accordance with the pre-specified exposure information as modified. The predicting of thermally-induced field deformation information by the model includes predicting of deformation effects of selected points on the substrate. It is based on a time-decaying characteristic as energy is transported across substrate; and a distance between the selected points and an edge of the substrate.

Abstract: The invention provides a method for correcting thermally-induced field deformations of a lithographically exposed substrate. First, a model is provided to predict thermally-induced field deformation information of a plurality of fields of the substrate. The pre-specified exposure information used to configure an exposure of the fields is then modified based on the thermally-induced deformation information as predicted by the model. Finally a pattern is exposed onto the fields in accordance with the pre-specified exposure information as modified. The predicting of thermally-induced field deformation information by the model includes predicting of deformation effects of selected points on the substrate. It is based on a time-decaying characteristic as energy is transported across substrate; and a distance between the selected points and an edge of the substrate.

Abstract: A method of manufacturing an integrated circuit (IC) for driving a flexible display includes depositing a pattern of spatially non-repetitive features in a first layer on a flexible substrate, said pattern of spatially non-repetitive features not substantially regularly repeating in both of two orthogonal directions (x,y) in the plane of the substrate; depositing a pattern of spatially repetitive features in a second layer on said first layer; aligning said second layer and said first layer so as to allow electrical coupling between said non-repetitive features and said repetitive features, wherein distortion compensation is applied during deposition of said repetitive features to enable said alignment.