Abstract: There is provided a reflective image-forming optical system which is applicable to an exposure apparatus using, for example, EUV light and which is capable of increasing numerical aperture while enabling optical path separation of light fluxes. In a reflective imaging optical system (6) forming an image of a first plane (4) onto a second plane (7), the numerical aperture on a side of the second plane with respect to a first direction (X direction) on the second plane is greater than 1.1 times a numerical aperture on the side of the second plane with respect to a second direction (Y direction) crossing the first direction on the second plane. The reflecting imaging optical system has an aperture stop (AS) defining the numerical aperture on the side of the second plane, and the aperture stop has an elliptic-shaped opening of which size in a major axis direction (X direction) is greater than 1.1 times that in a minor axis direction (Y direction).

Abstract: A method of operating an illumination system of a microlithographic projection exposure apparatus is provided. A set of illumination parameters that describe properties of a light bundle which converges at a point on a mask to be illuminated by the illumination system is first determined. Optical elements whose optical effect on the illumination parameters can be modified as a function of control commands are furthermore determined, as well as sensitivities with which the illumination parameters react to an adjustment of the optical elements, induced by the control commands. The control commands are then determined while taking the previously determined sensitivities into account, such that deviations of the illumination parameters from predetermined target illumination parameters satisfy a predetermined minimization criterion. These control commands are applied to the optical elements, before the mask is illuminated.

Abstract: A facet mirror for an illumination optical unit for projection lithography has a plurality of used facets, which in each case reflect an illumination light partial beam. The facet mirror has at least one change subunit having a plurality of change facets arranged jointly on a facet carrier, which change facets can be positioned alternatively at the used location of exactly one used facet. This results in a facet mirror with which different illumination geometries or illumination settings can be set operationally reliably and stably.

Abstract: A method for improving a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus, the method including: calculating a discrete pupil profile based on a desired pupil profile; selecting a discrete change to the discrete pupil profile; and applying the selected discrete change to the discrete pupil profile. The methods according to various embodiments disclosed herein may reduce the computational cost of discrete optimization from O(an) to O(n) wherein a is constant and n is the number of knobs that can generate discrete change in the pupil profile.

Abstract: An illumination system of a micro-lithographic projection exposure apparatus is provided, which is configured to illuminate a mask positioned in a mask plane. The system includes a pupil shaping optical subsystem and illuminator optics that illuminate a beam deflecting component. For determining a property of the beam deflecting component, an intensity distribution in a system pupil surface of the illumination system is determined. Then the property of the beam deflecting component is determined such that the intensity distribution produced by the pupil shaping subsystem in the system pupil surface approximates the intensity distribution determined before. At least one of the following aberrations are taken into account in this determination: (i) an aberration produced by the illuminator optics; (ii) an aberration produced by the pupil shaping optical subsystem; (iii) an aberration produced by an optical element arranged between the system pupil surface and the mask plane.

Abstract: A method for manufacturing a semi-conducting material including a layer of nitride of a group 13 element comprising active areas for manufacturing electronic components, and inactive areas, the active and inactive areas extending on a front face of the layer of nitride, the method comprising steps consisting of: using a mask comprising a plurality of apertures each defining an active area pattern on the initial substrate, growing the layer of nitride, receiving a theoretical pattern pitch corresponding to a desired distance between two adjacent active area patterns on the front face of the layer of nitride, calculating at least one mask pitch different from the theoretical pattern pitch for compensating shifts in the active area patterns, the mask pitch corresponding to a distance between two adjacent apertures of the protective mask.

Abstract: An optical element for transmitting radiation includes: a first surface region surrounding an optically used area of the optical element; and a second surface region that adjoins the first surface region. A circumferential edge is formed between the first and second surface regions. The optical element further includes a one-piece film which covers the first surface region, the edge and the second surface region. The film includes a hydrophobic material at least on its side facing away from the first and the second surface regions. An optical assembly includes at least one such optical element. A method produces such an optical element.

Abstract: Provided is an imprint apparatus that applies a resin to several locations on a substrate, brings the resin and a mold into contact, and transfers a contoured pattern formed in the mold to the resin, comprising: a controller that sets a principal axis direction according to the contoured pattern and determines the application positions of the resin based on the principal axis direction that has been set such that the distances between resin drops that have been applied so as to be separated in the principal axis direction is larger than the distances between resin drops that have been applied so as to be separated in a direction that is perpendicular to the principal axis direction; and a dispenser that applies the resin based on the application position that has been determined.

Abstract: A pattern irradiation apparatus includes a light source unit, an objective that irradiates a sample plane with light emitted from the light source unit, a spatial light modulator of a phase modulation type that is arranged at a position conjugate with a pupil position of the objective and that modulates a phase of the light emitted from the light source unit, a light blocking member that is arranged in an optical path between the spatial light modulator and the objective and that is configured to block 0-order light generated by the spatial light modulator, and a control device that makes a correspondence between a focusing position of the 0-order light generated by the spatial light modulator and a position of the light blocking member.

Abstract: An optical member driving apparatus includes an optical member for changing an optical path, a plurality of actuators each having a movable member which is controlled to move in one direction, a plurality of connecting members which connect edge portions of the optical member positioned on two axes orthogonal to each other and the movable members of the plurality of actuators, respectively, a position detector for detecting a moving amount of the movable member of each actuator and outputting a detection signal indicating the moving amount, and a controller for controlling movement of the movable member of each actuator based on the detection signal from the position detector so as to keep an intersection point of the two axes at constant position.

Abstract: The disclosure relates to an optical device for a lithography system, including an optical element, a supporting frame supporting the optical element, a sensor frame mechanically decoupled from the supporting frame, wherein a gap is provided between the supporting frame and the sensor frame, and a sensor assembly designed to determine a width of the gap in a contactless manner. The sensor assembly has a contact element and a contact surface. The contact element is designed to contact the contact surface to limit relative motion of the supporting frame relative to the sensor frame.

Abstract: Methods and related equipment for dynamic on-axis in-situ interferometry where the reference surface is positioned in an vacuum chamber. The systems use a wavelength shifting, or a phase shifting interferometer that allows the freedom to eliminate the need to step the cavity length physically with the reference surface, allowing the reference surface to be placed inside the vacuum chamber.

Abstract: A method for producing an optical element includes: providing a substrate (102), applying a layer system (103), wherein an optically effective surface (101) is formed and wherein the layer system has a layer (104) that is thermally deformable for manipulating the geometric shape of the optically effective surface, and applying a temperature field to the optical element while at least regionally heating the thermally deformable layer to above a specified operating temperature of the optical system. The thermally deformable layer is configured such that a deformation that is induced when the temperature field is applied is at least partially maintained after the optical element has cooled. Also disclosed is an optical element (400) that has an optically effective surface (401), a substrate (402), and a layer system (403) that has a reflection layer system (406), which includes a shape-memory alloy.

Abstract: A projection optical unit images an object field in an image field. The projection optical unit includes a plurality of mirrors guides imaging light from the object field to the image field. At least two of the mirrors are arranged directly behind one another in the beam path of the imaging light for grazing incidence with an angle of incidence of the imaging light which is greater than 60°. This results in an imaging optical unit that can exhibit a well-corrected imageable field with, at the same time, a high imaging light throughput.

Abstract: Aspects are generally directed to a compact anamorphic objective lens assembly. In one example, the objective lens assembly includes a first anamorphic lens group including a first cylindrical lens having a surface optically powered in a first dimension and a second cylindrical lens having a surface optically powered in a second dimension orthogonal to the first dimension, the first anamorphic lens group being positioned to receive visible light along an optical path, a second anamorphic lens group positioned along the optical path to receive the visible light from the first anamorphic lens group, the second anamorphic lens group including a third cylindrical lens having a surface optically powered in the first dimension and a fourth cylindrical lens having a surface optically powered in the second dimension, and an aperture stop centered along the optical path and interposed between the first and second anamorphic lens groups.

Abstract: An illumination optical assembly for a projection exposure apparatus includes a first facet element having a multiplicity of first facets, which are formed in each case by a multiplicity of displaceable individual mirrors, and a second facet element having a multiplicity of second facets. The displacement positions of the individual mirrors of the first facets are chosen in each case in so that, in the case of a predefined intensity distribution of an illumination radiation in an intermediate focus, the illumination radiation in the region of the facets of the second facet element has an intensity distribution with a maximum which is at most equal to a predefined maximum intensity or which is greater than a mean value of the intensity distribution by at most a predefined factor or absolute value.

Abstract: There is provided an illumination method for illuminating an illumination objective surface by using a light from a light source. The illumination method includes setting control amount for controlling a plurality of optical elements, to control a state of an incident light coming into each of the plurality of optical elements, the plurality of optical elements being arranged in parallel and being capable of controlling the state of the incident light; illuminating the illumination objective surface with the light from the light source via the plurality of optical elements; monitoring integrated energy of the light from the light source; and correcting the control amount for the plurality of optical elements on the basis of a result of the monitoring of the integrated energy.

Abstract: Emitter width of an LD is set greater than a diameter, of a core, in an entrance end surface of an optical fiber. An optical system provided between the LD and the optical fiber causes a diameter, of laser beam, in the entrance end surface of the optical fiber to become smaller than the diameter, of the core, in the entrance end surface of the optical fiber. The LD is configured so that a beam parameter product of the laser beam emitted from the LD shows a local minimal value which changes in accordance with the emitter width of the LD, and which is equal to or smaller than a beam parameter product of the optical fiber. The emitter width of the LD is set so that the beam parameter product of the laser beam emitted from the LD is equal to or smaller than that of the optical fiber.

Abstract: The disclosure provides an arrangement for an optical device including a component of the optical device and a support structure supporting the component. The support structure includes at least one locking device connected to the component and including a first fixation device and an associated second fixation device. The first fixation device and the second fixation device are adapted to be, in a movable state, movable with respect to each other along a first degree of freedom and a second degree of freedom into a final position. The first fixation device and the second fixation device are further adapted to be, in a locked state, fixed in the final position by at least one locking device contacting the first fixation device and the second fixation device.

Abstract: There is disclosed a method of measuring a process parameter for a manufacturing process involving lithography. In a disclosed arrangement the method comprises performing first and second measurements of overlay error in a region on a substrate, and obtaining a measure of the process parameter based on the first and second measurements of overlay error. The first measurement of overlay error is designed to be more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount.

Abstract: A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). The lithographic apparatus has an inspection apparatus with an illumination system that utilizes illuminating radiation with a wavelength of 2-40 nm. The illumination system includes an optical element that splits the illuminating radiation into a first and a second illuminating radiation and induces a time delay to the first or the second illuminating radiation. A detector detects the radiation that has been scattered by a target structure. The inspection apparatus has a processing unit operable to control a time delay between the first scattered radiation and the second scattered radiation so as to optimize a property of the combined first and second scattered radiation.

Abstract: A mirror, in particular for a microlithographic projection exposure apparatus has an optically effective surface, wherein the mirror has a reflectivity of at least 0.5 for electromagnetic radiation which has a prescribed working wavelength and impinges on the optically effective surface at an angle of incidence based on the respective surface normal of at least 65°, wherein the mirror has at least one layer (160, 170, 320) which comprises a compound of an element of the second period and an element of the 4d transition group, wherein the mirror has a protective layer (430, 530, 630, 730) arranged on top in the direction of the optically effective surface, wherein the material of the layer (420, 510, 620, 705) arranged in each case underneath the protective layer in the direction of the optically effective surface has a lower absorption than the material of the protective layer (430, 530, 630, 730).

Abstract: The present invention provides a determination method of determining a first prediction formula for predicting a fluctuation in optical characteristics of a projection optical system while a substrate is exposed on a first exposure condition, the method comprising obtaining a correlation coefficient between the first exposure condition and a second exposure condition corresponding to a second prediction formula for predicting the fluctuation in the optical characteristics, determining, when the correlation coefficient falls within an allowable range, the first prediction formula based on the second prediction formula without actually measuring the fluctuation in the optical characteristics, and determining, when the correlation coefficient falls outside the allowable range, the first prediction formula based on a result of actually measuring the fluctuation in the optical characteristics.

Abstract: A pulsed light generating method for generating a pulsed light by cutting out a laser light outputted from a laser light source with an intensity modulation type electro optic modulator, wherein: the electro optic modulator is driven by use of a drive signal that changes a voltage applied to the electro optic modulator between a voltage lower than a reference voltage and a voltage higher than the reference voltage, the reference voltage being a voltage applied to the electro optic modulator at which a transmittance of the laser light transmitting through the electro optic modulator is local maximum.

Abstract: A system and method of determining data representing a mapping of optical signals described by image data of a reflecting surface of a structure to a three-dimensional surface geometry of the reflecting surface is provided. At least first, second and third light sources are provided, comprising a broadband point light source, a spectrally variable point light source and a movable linear broadband light source, respectively. First, second and third images are acquired, corresponding to each light source. Surface geometry data describing a three-dimensional surface geometry of the reflecting surface is acquired. Based on the image data and the surface geometry data, reflecting surface mapping data describing a mapping between the reflections described by the first image data, second image data and third image data, and the three-dimensional surface geometry of the reflecting surface is determined.

Abstract: The disclosure relates to a method and an arrangement for actuating an element in a system for microlithography. According to an aspect in at least one degree of freedom an actuator force is exerted on the element via at least two actuator components. The actuator components are driven independently of one another for generating the actuator force. Driving is effected so that a thermal power introduced into the system on account of the generation of the actuator force by the actuator components deviates from a predefined constant value by not more than 20%.

Abstract: An external facility is used to control positioning of multiple displaceable mirror elements of a multi-mirror arrangement. The external facility is to a multi-mirror arrangement via a data channel having a bandwidth of at least 1 kHz per controlled degree of freedom of displacement.

Abstract: An illumination optical unit for EUV projection lithography illuminates an object field, in which an object to be imaged is arrangeable. A first facet mirror of the illumination optical generates secondary light sources as images of an upstream light source. The first facet mirror includes mirrors which include a mirror surface smaller than 2 mm×2 mm. The first facet mirror is a distance |g| from the light source. The illumination optical unit includes a second facet mirror. The two facet mirrors are a distance b? from each other. The individual mirrors of the first facet mirror have a focal length f in a plane of incidence of the illumination light on the individual mirrors such that [0.1 b?g/(g?b?)]<f<[10 b?g/(g?b?)].

Abstract: Multi-beam pattern generators employing processors to vary delivered dose of writing beams according to photoresist thicknesses, and associated methods are disclosed. A pattern generator may write a pattern upon a substrate having a photoresist which is sensitive to the writing beams. The pattern may be written in respective writing cycles when the writing beams write at least a portion of the pattern at writing pixel locations. A beam actuator of the pattern generator may independently direct the writing beams to the writing pixels to deliver respective pixel doses during each writing cycle. Pixel doses delivered may be adjusted according to a thickness of the photoresist at various writing pixel locations according to one or more approaches, using one or more of: actuator dwell times, emitted pulse duration, emitted pulse frequency, and emitted pulse intensity. In this manner, additional dimensional control is provided for substrates having variable photoresist thicknesses.

Abstract: An illumination optical assembly for projection lithography serves for illuminating an object field, in which an object to be imaged is arrangeable. The object field has a scan length along an object displacement direction. The illumination optical assembly has two facet mirrors for the reflective guidance of illumination light towards the object field. Second facets of the second facet mirror serve for guiding a respective illumination light partial beam into the object field. The second facet mirror is a pupil distance from a pupil plane of the illumination optical assembly that is closest adjacent to the second facet mirror. The second facets are arranged in a grid, wherein at least one grid constant of the grid is predefined by the pupil distance and by the scan length. This results in an illumination optical assembly which achieves an illumination of predefined pupil sections that is relatively homogeneous.

Abstract: An extreme ultraviolet lithography (EUVL) system is disclosed. The system includes an extreme ultraviolet (EUV) mask with three states having respective reflection coefficient is r1, r2 and r3, wherein r3 is a pre-specified value that is a function of r1 and r2. The system also includes a nearly on-axis illumination (ONI) with partial coherence ? less than 0.3 to expose the EUV mask to produce diffracted light and non-diffracted light. The system further includes a projection optics box (PUB) to remove a portion of the non-diffracted light and to collect and direct the diffracted light and the remaining non-diffracted light to expose a target.

Abstract: A facet mirror is to be used as a bundle-guiding optical component in a projection exposure apparatus for microlithography. The facet mirror has a plurality of separate mirrors. For individual deflection of incident illumination light, the separate mirrors are in each case connected to an actuator in such a way that they are separately tiltable about at least one tilt axis. A control device, which is connected to the actuators, is configured in such a way that a given grouping of the separate mirrors can be grouped into separate mirror groups that include in each case at least two separate mirrors. The result is a facet mirror which, when installed in the projection exposure apparatus, increases the variability for setting various illumination geometries of an object field to be illuminated by the projection exposure apparatus. Various embodiments of separate mirrors for forming the facet mirrors are described.

Abstract: A photolithography method includes producing, from an optical source, a pulsed light beam; and scanning the pulsed light beam across a substrate of a lithography exposure apparatus to expose the substrate with the pulsed light beam including exposing each sub-area of the substrate with the pulsed light beam. A sub-area is a portion of a total area of the substrate. For each sub-area of the substrate, a lithography performance parameter associated with the sub-area of the substrate is received; the received lithography performance parameter is analyzed, and, based on the analysis, a first spectral feature of the pulsed light beam is modified and a second spectral feature of the pulsed light beam is maintained.

Abstract: The laser system may include a delay circuit unit, first and second trigger-correction units, and a clock generator. The delay circuit unit may receive a trigger signal, output a first delay signal obtained by delaying the trigger signal by a first delay time, and output a second delay signal obtained by delaying the trigger signal by a second delay time. The first trigger-correction unit may receive the first delay signal and output a first switch signal obtained by delaying the first delay signal by a first correction time. The second trigger-correction unit may receive the second delay signal and output a second switch signal obtained by delaying the second delay signal by a second correction time. The clock generator may generate a clock signal that is common to the delay circuit unit and the first and second trigger-correction units.

Abstract: An illumination optical unit for EUV projection lithography serves to illuminate an object field with illumination light. A transmission optical unit images field facets in a manner superposed on one another into the object field via illumination channels, which each have assigned to them one of the field facets and one pupil facet of a pupil facet mirror. The superposition optical unit has at least two mirrors for grazing incidence, downstream of the pupil facet mirror. The mirrors for grazing incidence produce an illumination angle bandwidth of an illumination light overall beam, composed of the illumination channels, in the object field. The bandwith is smaller for a plane of incidence parallel to the object displacement direction than for a plane perpendicular thereto. The result can be an illumination optical unit, by which a projection optical unit can be adapted to a configuration of an EUV light source for the illumination light.

Abstract: A radiation collector comprising a first collector segment comprising a plurality of grazing incidence reflector shells configured to direct radiation to converge in a first location at a distance from the radiation collector, a second collector segment comprising a plurality of grazing incidence reflector shells configured to direct radiation to converge in a second location at said distance from the radiation collector, wherein the first location and the second location are separated from one another.

Abstract: A method for production line monitoring during semiconductor device fabrication includes acquiring a plurality of inspection results from a plurality of reference samples with an inspection sub-system. The method includes storing the acquired inspection results and geometric pattern codes for each of the reference samples in a database. The method includes acquiring an additional inspection result from an additional sample, where the additional inspection result includes an additional set of geometric pattern codes for identifying each defect identified within the additional inspection result from the additional sample. The method also includes correlating the set of geometric pattern codes of the additional sample with the geometric pattern codes from the reference set of samples to identify at least one of one or more new patterns or one or more patterns displaying a frequency of occurrence above a selected threshold.

Abstract: Disclosed is a method of determining a correction for measured values of radiation diffracted from a target comprising a plurality of periodic structures, subsequent to measurement of the target using measurement radiation defining a measurement field. The correction acts to correct for measurement field location dependence in the measured values. The method comprises performing a first and second measurements of the periodic structures; and determining a correction from said first measurement and said second measurement. The first measurement is performed with said target being in a normal measurement location with respect to the measurement field. The second measurement is performed with the periodic structure in a shifted location with respect to the measurement field, said shifted location comprising the location of another of said periodic structures when said target is in said normal measurement location with respect to the measurement field.

Abstract: A print head includes: a mounting board; a light source portion that includes a plurality of light emitting elements provided on one surface of the mounting board; a drive member that is provided on other surface of the mounting board so as to generate a lighting signal and drive the light source portion; and a first temperature detector that is provided on the mounting board, and at least one second temperature detector that is provided at a farther position on the mounting board from the drive member than the first temperature detector; and the drive member includes: a light emitting unit that generates the lighting signal based on a temperature detected by the first temperature detector and a temperature detected by the second temperature detector; and an optical unit that forms an image of light emitted from the light emitting unit.

Abstract: An object of the present invention is to provide an evaluation condition setting method and an evaluation condition setting apparatus of a semiconductor device which can select an appropriate evaluation pattern for exposure condition management with high accuracy. In order to solve the object, the present invention proposes an evaluation condition setting method or an evaluation condition setting apparatus which excludes a pattern corresponding to a process window chart defining a process window range smaller than a predetermined process window range from a measurement target, in a plurality of the process window charts which are obtained based on scanning of a charged particle beam with respect to another pattern formed on a sample.

Abstract: An illumination optical unit for EUV projection lithography includes a field facet mirror and a pupil facet mirror. A correction control device, which is used for the controlled displacement of at least some field facets that are usable as correction field facets, which are signal connected to displacement actuators, is embodied so that a correction displacement path for the correction field facets is so large that a respective correction illumination channel is cut off at the margin by the correction pupil facet so that the illumination light partial beam is not transferred in the entirety thereof from the correction pupil facet into the object field.

Abstract: A lithography system includes an optical source configured to emit a pulsed light beam; a lithography apparatus including an optical system, the optical system being positioned to receive the pulsed light beam from the optical source at a first side of the optical system and to emit the pulsed light beam at a second side of the optical system; and a control system coupled to the optical source and the optical lithography apparatus, the control system configured to: receive an indication of an amount of energy in the pulsed light beam at the second side of the optical system, determine an energy error, access an initial control sequence, the initial control sequence being associated with the optical source, determine a second control sequence based on the determined energy error and the initial control sequence, and apply the second control sequence to the optical source.

Abstract: An optical apparatus includes an interchange mechanism and an optical assembly of an illumination system or a projection objective. At least one of the plurality of optical elements of the optical assembly is selected from among a plurality of ones selectable from the interchange mechanism which facilitates exchange of one for another in the beam path. To reduce transmission of vibration from the interchange mechanism to the optical assembly, the interchange mechanism is mounted on a structure which is substantially dynamically decoupled from the housing, and a selected selectable optical element is located at an operating position at which it is separate from the interchange mechanism.

Abstract: A microlithography projection exposure apparatus includes a projection lens at least one manipulator to change an optical effect of at least one optical element of the projection lens, and a travel establishing device for generating a travel command for the at least one manipulator.

Abstract: A method for measuring an angularly resolved intensity distribution in a reticle plane (24) of a projection exposure apparatus (10). The apparatus includes an illumination system (16), irradiating a reticle (22) arranged in the reticle plane (24) and having a first pupil plane (20). All planes of the projection exposure apparatus which are conjugate thereto are further pupil planes, and the reticle plane (24) and all planes which are conjugate thereto are field planes. The method includes: arranging a spatially resolving detection module (44) in the region of one of the field planes (24, 30) such that the detection module is at a smaller distance from this field plane than from the closest pupil plane (20), radiating electromagnetic radiation (21) onto an optical module (42) from the illumination system, and determining an angularly resolved intensity distribution of the radiation from a signal recorded by the detection module.

Abstract: An MgF2 optical thin film is formed on an optical surface of a base material. The MgF2 optical thin film includes MgF2 particles and an amorphous silicon oxide-based binder which exists on the surfaces of the MgF2 particles and between the MgF2 particles. Owing to this amorphous silicon oxide-based binder, the optical thin film can have high mechanical strength and high adhesion to the base material, while having excellent environment resistance and a lower refractive index.

Abstract: Methods and calibrations modules are provided, for calibrating a pupil center in scatterometry overlay measurements. The calibration comprises calculating fluctuations from a first statistical figure of merit such as an average of an overlay signal per pixel at the pupil and significantly reducing, for example minimizing, the fluctuations with respect to a second statistical figure of merit thereof, such as a pupil weighted variance of the fluctuations.

Abstract: A microlithographic projection exposure apparatus includes: a projection lens for imaging mask structures via an exposure radiation including at least one optical element and at least one manipulator; a read-in device for reading in application-specific structure information defining at least one property of an angular distribution of the exposure radiation upon entering the projection lens; and a travel establishing device for establishing a travel command defining a change to be made in an optical effect of the at least one optical element by manipulation of a property of the optical element via the at least one manipulator along a travel. The travel establishing device is configured to establish the travel command in an at least two-stage optimization.

Abstract: An illumination system of a microlithographic projection exposure apparatus includes a pupil forming unit directing light on a spatial light modulator that transmits or reflects impinging light in a spatially resolved manner. An objective images a light exit surface of the spatial light modulator on light entrance facets of an optical integrator so that an image of an object area on the light exit surface completely coincides with one of the light entrance facets. The pupil forming unit and the spatial light modulator are controlled so that the object area is completely illuminated by the pupil forming unit and projection light associated with a point in the object area is at least partially and variably prevented from impinging on the one of the light entrance facets.

Abstract: The present invention determines property of a target (30) on a substrate (W), such as a grating on a wafer. An inspection apparatus has an illumination source (702, 710) with two or more illumination beams (716, 716?, 716?, 716??) in the pupil plane of a high numerical aperture objective lens (L3). The substrate and target are illuminated via the objective lens from different angles of incidence with respect to the plane of the substrate. In the case of four illumination beams, a quad wedge optical device (QW) is used to separately redirect diffraction orders of radiation scattered from the substrate and separates diffraction orders from the two or more illumination beams. For example four 0th diffraction orders are separated for four incident directions. After capture in multimode fibers (MF), spectrometers (S1-S4) are used to measure the intensity of the separately redirected 0th diffraction orders as a function of wavelength. This may then be used in determining a property of a target.