Abstract: An automated optical double-sided inspection apparatus includes a first image-capturing portion, a second image-capturing portion, a platform, a first light-blocking portion, a second light-blocking portion, and a processing portion. The platform carries an external object. When the processing portion operates in a first capturing mode, the second light-blocking portion blocks visible light from passing therethrough, while the first light-blocking portion allows visible light to pass therethrough, so that the first image-capturing portion shoots a first side of the external object through the first light-blocking portion to obtain a first image.

Abstract: A visual inspection apparatus includes a stage on which a FCBGA type semiconductor package having a lid is placed, a camera located above the stage, a coaxial illumination device located between the camera and the stage, an oblique illumination device located between the camera and the stage, and a control device. The control device is configured to irradiate the FCBGA type semiconductor package with illumination lights by the coaxial illumination device and the oblique illumination device, capture the FCBGA type semiconductor package by the camera to obtain the captured image, integrate a number of pixels of a predetermined pixel value by a binarization process of the captured image to obtain a determination value, and compare the determination value with a predetermined value to determine a non-defective product or a defective product.

Abstract: A system for differentiating particulate contamination from defects on a surface of a specimen includes an illumination source configured to illuminate the specimen with a light at a predetermined angle relative to the surface of the specimen, an image recording device configured to capture the light reflected from the surface of the specimen in a sensor image, and an evaluation unit configured to receive deflectometry or phase-shifted deflectometry (PSD) image data and dust channel image data from the image recording device, correlate the PSD image data and dust channel image data, and separately output first result information and second result information, the first result information including defect identification information and defect location information and the second result information including contamination identification information and contamination location information.

Abstract: A method of detecting an abnormal growth of graphene includes: preparing an inspection target having a graphene film formed on a substrate by CVD; receiving light from the graphene film by using a dark field optical system; and inspecting the received light, thereby detecting the abnormal growth of the graphene.

Abstract: An object of the invention is to provide a defect inspection device capable of correcting image forming position deviation due to displacement of a sample surface in a Z direction while enabling image forming detection from a direction not orthogonal to a longitudinal direction of illumination. The defect inspection device according to the invention is configured to determine on which lens in a lens array scattered light is incident according to a detection elevation angle of the scattered light from a sample, and an image position of the scattered light having a small elevation angle is corrected more than an image position of the scattered light having a large elevation angle.

Abstract: According to an embodiment, an inspection apparatus includes: a stage; an illumination optical system; an imaging optical system including a sensor that detects a focal position; a detection circuit configured to detect a focal position signal of the light; a setting circuit configured to set a first focus offset value of a first region based on a result obtained by shifting, in an advancement direction of the stage, coordinate data of first focal position data generated based on a result obtained by optically scanning the first region; and a control circuit configured to control a height position of the stage based on the focal position signal and the first focus offset value.

Abstract: Micro device optical inspection and repairing equipment adopting an adhesion device is provided. The micro device optical inspection and repairing equipment includes a carrying stage, an optical inspection module and at least one adhesion device. The optical inspection module is arranged corresponding to the carrying stage so as to capture image information and obtain a position coordinate from the image information. The adhesion device includes a main body and an adhesive portion. The adhesive portion is connected to the main body. The adhesion device can move to a target position of the carrying stage according to the position coordinate. The main body is adapted to drive the adhesive portion to move to the target position along a moving axis. An optical inspection and repairing method adopting the micro device optical inspection and repairing equipment is also provided.

Abstract: Apparatus and methods for determining wafer characters are disclosed. In one example, an apparatus is disclosed. The apparatus includes: a processing tool configured to process a semiconductor wafer; a device configured to read an optical character disposed on the semiconductor wafer while the semiconductor wafer is located at the apparatus for wafer fabrication; and a controller configured to determine whether the optical character matches a predetermined character corresponding to the semiconductor wafer based on the optical character read in real-time at the apparatus.

Abstract: Embodiments of the present disclosure generally relate to optical device fabrication. In particular, embodiments described herein relate to a method of forming a plurality of optical devices. In one embodiment, a method includes dicing a plurality of optical device lenses from a substrate, disposing the plurality of optical device lenses on a carrier, and performing at least one process on the plurality of optical device lenses to form a plurality of optical devices, each optical device having a plurality of optical device structures.

Abstract: A method for high throughput defect detection, the method may include (i) performing, using first detection channels, a simultaneous inspection process through a segmented pupil plane that comprises multiple pupil plane segments to select one or more pupil plane segments of interest out of multiple pupil plane segments; (ii) configuring one or more configurable filters related to second detection channels to pass radiation received from the one or more pupil plane segment of interest and to block radiation received from one or more non-of-interest pupil plane segments; and (iii) performing, using the second detection channels, a partially masked pupil plane inspection process.

Abstract: According to one embodiment, a defect management apparatus includes a processor. The processor acquires first information and second information, the first information including first defect positions relating to defects detected with a first device for an inspection target and corresponding first labels indicating classifications of the defects, the second information including second defect positions relating to defects detected with a second device for the inspection target. The processor determines a first defect position corresponding to a second defect position as a corresponding defect position. The processor diverts the first label corresponding to the corresponding defect position as a second label of the second defect position.

Abstract: Nondestructive characterization of crystalline wafers is provided, including defect detection, identification, and counting. Certain aspects relate to development of nondestructive, high fidelity defect characterization and/or dislocation counting methods based on deep neural networks. Certain aspects relate to nondestructive methods for defect characterization of silicon carbide (SiC) wafers. By subjecting SiC wafers to nondestructive defect characterization, SiC wafers in their final state may be characterized and subsequently used for device fabrication, vastly reducing the expense of the characterization process. Nondestructive defect characterization also allows for increased sampling and improved feedback loops between crystalline growth process development and subsequent device production.

Abstract: A method of copper hillock detecting includes the following steps. A testkey structure is disposed on a substrate, wherein the testkey structure includes a lower metallization layer, an upper metallization layer, and a dielectric layer between the lower metallization layer and the upper metallization layer. A force voltage difference is applied to the lower metallization layer and the upper metallization layer under a test temperature and stress time. A changed sensing voltage difference to the lower metallization layer and the upper metallization layer is detected for detecting copper hillock.

Abstract: A semiconductor device inspection method includes: performing a first inspection irradiation on at least one portion in an area to be inspected; outputting first information indicating presence or absence of a defective portion in an entire of the area to be inspected, based on the first inspection irradiation; when it is determined that a second inspection irradiation is to be performed, performing the inspection irradiation on at least one portion in the area to be inspected of the semiconductor device to which the test signal is being input, the portion of the second inspection irradiation is different from the portion of the first inspection irradiation; and outputting second information indicating presence or absence of a defective portion in the entire of the area to be inspected, based on the second inspection irradiation.

Abstract: Some embodiments of the present disclosure relate to a processing tool. The tool includes a housing enclosing a processing chamber, and an input/output port configured to pass a wafer through the housing into and out of the processing chamber. A back-side macro-inspection system is arranged within the processing chamber and is configured to image a back side of the wafer. A front-side macro-inspection system is arranged within the processing chamber and is configured to image a front side of the wafer according to a first image resolution. A front-side micro-inspection system is arranged within the processing chamber and is configured to image the front side of the wafer according to a second image resolution which is higher than the first image resolution.

Abstract: A dark field metrology device includes an objective lens arrangement and a zeroth order block to block zeroth order radiation. The objective lens arrangement directs illumination onto a specimen to be measured and collects scattered radiation from the specimen, the scattered radiation including zeroth order radiation and higher order diffracted radiation. The dark field metrology device is operable to perform an illumination scan to scan illumination over at least two different subsets of the maximum range of illumination angles; and simultaneously perform a detection scan which scans the zeroth order block and/or the scattered radiation with respect to each other over a corresponding subset of the maximum range of detection angles during at least part of the illumination scan.

Abstract: Methods and apparatus bonding chiplets to substrates are provided herein. In some embodiments, a multi-chamber processing tool for processing a substrate includes: an equipment front end module (EFEM) having one or more loadports for receiving one or more types of substrates; and a plurality of automation modules coupled to each other and having a first automation module coupled to the EFEM, wherein each of the plurality of automation modules include a transfer chamber and one or more process chambers coupled to the transfer chamber, wherein the transfer chamber includes a buffer configured to hold a plurality of the one or more types of substrates, and wherein the transfer chamber includes a transfer robot configured to transfer the one or more types of substrates between the buffer, the one or more process chambers, and a buffer disposed in an adjacent automation module of the plurality of automation modules.

Abstract: Methods and apparatus for bonding chiplets to substrates are provided herein. In some embodiments, a multi-chamber processing tool for processing substrates, includes: a first equipment front end module (EFEM) having one or more loadports for receiving one or more types of substrates, a second EFEM having one or more loadports; and a plurality of atmospheric modular mainframes (AMMs) coupled to each other and having a first AMM coupled to the first EFEM and a last AMM coupled to the second EFEM, wherein each of the plurality of AMMs include a transfer chamber and one or more process chambers coupled to the transfer chamber, wherein the transfer chamber includes a buffer, and wherein the transfer chamber includes a transfer robot, the one or more process chambers, and a buffer disposed in an adjacent AMM of the plurality of AMMs.

Abstract: A detection method includes: determining process data of a new process; according to the process data of the new process, detecting, by a first production system, whether a wafer carrier type of the new process matches an acceptable level of a corresponding process step or not and whether the new process matches a flag of the corresponding process step or not; if not, determining that the process data does not pass the detection and outputting first detection information; or if the wafer carrier type of the new process matches the acceptable level of the corresponding process step and the new process matches the flag of the corresponding process step, detecting, by a second production system, if the second production system detects a mismatch, determining that the process data does not pass the detection and outputting second detection information.

Abstract: There are provided systems and methods of obtaining a segmented image of a semiconductor specimen, the image comprising first structural elements, obtaining a reference image of the semiconductor specimen, the reference image being based on design data and comprising second structural elements, determining, for at least one pair of elements including a first structural element and a corresponding second structural element, data Dspat informative of a spatial transformation required in order to match the elements of the pair in accordance with a matching criterion, and determining at least one of data informative of a defect in the first structural element and data informative of edge roughness of the first structural element using at least Dspat.

Abstract: In an embodiment, a system includes: a broadband light source; a wafer with a first side facing the broadband light source; a first light sensor configured to detect reflected light from the broadband light source emanating from the first side; a second light sensor configured to detect emergent light emanating from a second side of the wafer opposite the first side, wherein the emergent light originates from the broadband light source; and a detector module configured to analyze the reflected light and the emergent light to identify wafer defects.

Abstract: Provided is a display apparatus that superimposes an image on an observation target, and the display apparatus includes a display unit and a display controller. The display unit displays an object image. The display controller adjusts a display position of the object image in a display region of the display unit in a horizontal direction on a pixel line basis.

Abstract: An arrangement of one or more micro cameras are used in conjunction with computer controlled illumination to create a high-throughput microscope able to operate without the need of expensive scanning stages. A single unit contains a plurality of sensors, lenses tiled in such a way to cover a significant fraction of the desired field of view in a digital single acquisition. Mechanical stages and patterned illumination can then be used in conjunction with the system to enhanced the imaged depth of field, or create an acquisition stack to enhance the information acquired. Multiple units can be combined to obtain images of a single sample from different angles. The absence of mechanical stages makes the imaging system ideal for use in scenarios that require the sample to be in a climate and/or environmentally controlled chamber.

Abstract: A document processing apparatus including a processor configured to receive data including plural document sets each made up of predetermined plural pages; classify the data into sets; and in a case where the data includes an unclassified page, display a candidate for a set to which the unclassified page belongs.

Abstract: Embodiments may include methods, systems, and apparatuses for care area based swath speed for throughput and sensitivity improvement. A method may comprise receiving scan region of a die. The scan region of the die may have a first care area at a controller configured to control an inspection tool, wherein the inspection tool includes a stage having the die disposed thereon. The method may then include scanning a first portion of the scan region at a fast feed rate and the first care area at a slow feed rate. Scanning may include emitting particles in a particle beam toward the die resulting an incidence on the die. Emitting may be performed using a particle emitter. Scanning may then include detecting a portion of particles reflected from the incidence. Detecting may be performed using a detector. Scanning may then include changing a position of the stage relative to the incidence.

Abstract: Surface inspection apparatus includes stage for holding substrate, light source, scanning optical system for scanning light from the light source along first direction for plural times, stage scanning mechanism for scanning the stage in second direction intersecting with the first direction, and detector for detect scattered light from the substrate Inspection target region of the substrate is scanned by the light from the light source by an operation of the scanning optical system and the stage scanning mechanism. Chromatic aberration of the scanning optical system is corrected to fall within predetermined wavelength range. Fluctuation range of wavelength of the light from the light source is determined based on variation in total lighting time of the light source in scanning period of each light scanning operation along the first direction. The fluctuation range falls within the predetermined wavelength range.

Abstract: An image acquiring method, an image acquiring apparatus and a wafer inspection apparatus are disclosed. A line scan camera is disposed above a transfer path of a wafer to continuously acquire partial images having a predetermined size by imaging a scan area including a portion of the transfer path, and the partial images are stored in an image storage unit. A partial image including a predetermined feature point among the partial images is detected by an image analysis unit, and an image merging unit merges a predetermined number of partial images including the detected partial image to acquire an entire image of the wafer. An image inspection unit analyzes the entire image of the wafer to detect defects in the wafer.

Abstract: Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are possible where the amplifier is configured to operate in at least an active mode and a standby mode. Circuital arrangements can reduce bias circuit and stacked transistors standby current during operation in the standby mode and to reduce impedance presented to the gates of the stacked transistors during operation in the active mode while maintaining voltage compliance of the stacked transistors during both modes of operation.

Abstract: Provided are a device and a method for monitoring substrates to determine a processed state of the substrates and inspecting presence of abnormality in the processed substrates. A device for inspecting substrates includes a substrate mounting part moving relative to the substrate and for mounting a substrate, a measurement part for monitoring the substrate, a control part configured to control a movement path of the measurement part so that at least some regions are monitored from positions different from each other with respect to a plurality of substrates, and an analysis part configured to determine presence of abnormality from monitoring information about the plurality of substrates.

Abstract: Various embodiments of systems and methods for calibrating wafer inspection system modules are disclosed herein. More specifically, the present disclosure provides various embodiments of systems and methods to calibrate the multiple spectral band values obtained from a substrate by a camera system included within a WIS module. In one embodiment, multiple spectral band values are red, green, and blue (RGB) values. As described in more detail below, the calibration methods disclosed herein may use a test wafer having a predetermined pattern of thickness changes or color changes to generate multiple spectral band offset values. The multiple spectral band offset values can be applied to the multiple spectral band values obtained from the substrate to generate calibrated RGB values, which compensate for spectral responsivity differences between camera systems included within a plurality of WIS modules.

Abstract: An apparatus for inspecting plate-like bodies to inspect a side surface of a plate-like body with sheeted coating materials on a top side and bottom side of the plate-like body, is provided. The apparatus includes at least one light emitting unit configured to irradiate the side surface of the plate-like body with light. The apparatus includes at least one light receiving unit configured to receive light reflected with respect to the side surface of the plate-like body. The apparatus includes a conveying unit configured to move at least one among the light emitting unit and the plate-like body and to vary a position of the light on the side surface of the plate-like body, emitted by the light emitting unit.

Abstract: A method of inspection or metrology of four sides of a sample is disclosed. The method includes providing samples in a carrier at a first side of an imaging tool and moving the samples from the carrier to the imaging tool via a pick-and-place stage assembly. The method includes imaging first and second sides of the samples via first and second channels of the imaging tool and returning the samples to the carrier. The method includes rotating the carrier by 90 degrees and translating the carrier to an opposite side of the imaging tool and moving the samples individually from the carrier to the imaging tool. The method includes imaging a third and fourth side of the sample via the first and second channel of the imaging tool and returning the one or more samples from the imaging tool to the carrier.

Abstract: An exhaust stream monitoring system for a photolithography track of an IC fabrication process comprises a reaction chamber including a housing, an inflow port and an outflow port, the housing containing a thermal plate for heating a semiconductor process wafer for a predetermined amount of time. An influent pipe coupled to the inflow port supplies a photoresist adhesion promoter in a gaseous form to the reaction chamber. An effluent pipe coupled to the outflow port is operative to remove byproducts from the reaction chamber as an exhaust stream. At least one gas sensor manifold assembly is coupled to the effluent pipe for monitoring the exhaust stream from the reaction chamber to detect presence of one or more byproducts of a reaction between the photoresist adhesion promoter and the semiconductor process wafer.

Abstract: An apparatus for testing an edge portion of a substrate, includes a first illumination source configured to irradiate light to an end portion of the edge portion of the substrate; a second illumination source configured to irradiate light to a lower portion of the edge portion; a third illumination source configured to irradiate light to an upper portion of the edge portion; and first to third photographing portions, respectively corresponding to the first to third illumination sources, wherein the first illumination source comprises a C-shaped cross-section and comprises a first curved surface facing the end portion of the edge portion, the second illumination source comprises a half C-shaped cross-section and comprises a second curved surface facing the lower portion of the edge portion, and the third illumination source comprises a half C-shaped cross-section and comprises a third curved surface facing the upper portion of the edge portion.

Abstract: A substrate defect inspection method includes: irradiating a target substrate with an EUV beam from an EUV illumination source by using a first focusing optical system; guiding a scattered reflected beam, but no specularly-reflected beam, among beams reflected from the target substrate to a light receiving surface of a sensor by using a second focusing optical system; and determining that a defect is present at an irradiation spot of the target substrate with the EUV beam when an intensity of the received scattered reflected beam exceeds a predetermined threshold; the method further including, before the irradiation of the target substrate with the EUV beam: a reflectance acquisition step of acquiring a reflectance of the target substrate to the EUV beam; and a threshold computation step of setting the predetermined threshold based on the reflectance acquired in the reflectance acquisition step.

Abstract: An inspection apparatus including an image generation device which generates a second image corresponding to a first image, and a defect detection device which detects a defect in the second image. Each of the first and second image includes partial regions each including pixels. The defect detection device is configured to estimate a first value indicating a position difference between the first and second image for each of the partial regions, based on a luminance difference between the first and second image, estimate a second value indicating a reliability of the first value for each of the partial regions, and estimate a position difference between the first and second image for each of the pixels, based on the first and second value estimated for each of the partial regions.

Abstract: A method including performing a simulation to evaluate a plurality of metrology targets and/or a plurality of metrology recipes used to measure a metrology target, identifying one or more metrology targets and/or metrology recipes from the evaluated plurality of metrology targets and/or metrology recipes, receiving measurement data of the one or more identified metrology targets and/or metrology recipes, and using the measurement data to tune a metrology target parameter or metrology recipe parameter.

Abstract: An inspection apparatus for inspecting an object such as a pellicle for use in an EUV lithographic apparatus, the inspection apparatus including: a vacuum chamber; a load lock forming an interface between the vacuum chamber and an ambient environment; and a stage apparatus configured to receive the object from the load lock and displace the object inside the vacuum chamber, wherein the vacuum chamber includes a first parking position and a second parking position for temporarily storing the object.

Abstract: A method and a system for obtaining information from a sample. The system may include (i) a spatial filter that includes a blocking element and an aperture; (ii) an illumination unit; and (iii) an optical unit that includes an optical objective assembly. The illumination unit may be configured to illuminate the optical objective assembly with oblique radiation. The optical objective assembly may be configured to (a) focus the oblique radiation onto the sample, (b) collect radiation from the sample to provide collected radiation, and (c) reflect the oblique radiation to provide back reflected radiation. The optical unit may be configured to (a) focus the collected radiation to provide focused collected radiation, (b) direct the focused collection radiation towards the aperture, (c) focus the back reflected radiation to provide focused back reflected radiation, and (d) direct the focused back reflected radiation towards the blocking element.

Abstract: A defect displaying method is provided in the disclosure. The method comprises acquiring defect group information from an image of a wafer, wherein the defect group information includes a set of correlations between a plurality of defects identified from the image and one or more corresponding assigned defect types and displaying at least some of the plurality of defects according to their corresponding assigned defect types.

Abstract: A photomultiplier tube (PMT) detector assembly includes a PMT and an analog PMT detector circuit. The PMT includes a photocathode configured to emit an initial set of photoelectrons in response to an absorption of photons. The PMT includes a dynode chain with a plurality of dynodes. The dynode chain is configured to receive the initial set of photoelectrons, generate at least one amplified set of photoelectrons, and direct the at least one amplified set of photoelectrons. The PMT includes an anode configured to receive the at least one amplified set of photoelectrons, with a digitized image being generated based on a measurement of the final amplified set of photoelectrons. The digitized image is corrected by applying an output of the signal measured by the analog PMT detector circuit to the digitized image.

Abstract: A method for removing a foreign substance according to an embodiment includes: a step of preparing a Fabry-Perot interference filter in which a gap is formed between a portion of a first laminate at least including a first mirror portion and a portion of a second laminate at least including a second mirror portion facing each other so that a distance between the first mirror portion and the second mirror portion facing each other varies by an electrostatic force; a step of detecting a foreign substance adhering to a surface of the second laminate; and a step of blowing air in which an airflow peak position is adjusted on the basis of a position of the detected foreign substance onto the surface of the second laminate and thereby removing the foreign substance from the surface of the second laminate.

Abstract: The present invention provides a method and apparatus for analyzing a semiconductor wafer for analyzing a defect distribution pattern on a semiconductor wafer to be tested. The method comprises: obtaining a defect distribution map of the semiconductor wafer to be tested, the defect distribution map indicating a defect distribution within a surface of the semiconductor wafer to be tested; establishing a three-dimensional model to be tested according to the defect distribution map, wherein an XY plane of the three-dimensional model to be tested corresponds to the surface of the semiconductor wafer to be tested, and a Z-axis of the three-dimensional model to be tested corresponds to the number of defects in each grid unit in the XY plane.

Abstract: A view system (100A, 100B) for a vehicle (1) has at least one image capture unit (10A, 10B) for capturing image data of an area around the vehicle (1), wherein the image capture unit (10A, 10B) has an image sensor (11A, 11B) and an optical element (12A, 12B), at least one image processing unit (20A, 20B) for processing the image data captured by the image capture unit, and at least one light source (40, 40.1, 40.2) for illuminating the optical element (12A, 12B). The view system is configured to highlight the recognizability of a foreign particle (S, T), which is located on the optical element (12A, 12B), on the image sensor (11A, 11B) of the image capture unit (10A, 10B) by means of the illumination of the optical element (12A, 12B).

Abstract: A method for machine learning enhanced optical-based screening for in-line wafer testing includes receiving optical spectra data for a wafer-under-test by performing scatterometry on the wafer-under-test, performing predictive model screening by applying a predictive model based on the optical spectra data, determining whether a device associated with the wafer-under-test is defective based on the predictive model screening, and if the device is determined to be defective, dynamically modifying a yield map associated with the wafer-under-test, including reassigning at least one die.

Abstract: A device and a method for simultaneously inspecting defects of a surface and a subsurface of an optical element are provided. Combined with laser-induced ultrasound and laser scattering inspection technologies, through generating acoustic sound waves on the surface and the subsurface of the optical element to be tested by lasers, a static light scattering effect of subsurface defects under modulation of the acoustic sound wave is observed and analyzed; through analyzing amplitude and phase changes of scattered light intensity and reflected light intensity, inspection for the defects of the surface and the subsurface of the optical element is realized. The present invention can be applied in quality inspection of precise optical elements, especially in finished product inspection of ultra-precise optical elements having strict requirements on the subsurface defects.

Abstract: A surface defect measuring apparatus and method by microscopic scattering polarization imaging is provided. The apparatus mainly comprises a laser, a first converging lens, a rotary diffuser, a second converging lens, a diaphragm, a third converging lens, a pinhole, a fourth converging lens, a polarizer, a half-wave plate, a polarizing beam splitter, an X-Y translation stage, a sample, a microscope lens, a quarter-wave plate, a micro-polarizer array, a camera and a computer. The micro-polarizer array is adopted to realize real-time microscopic scattering polarization imaging of the surface defects; a polarization-degree image is calculated to improve the sensitivity for detecting the surface defects of the ultra-smooth element, and the effective detection of the surface defects of a high-reflective coating element is also realized, and the requirement for rapid detection of the surface defects of a meter-scale large-aperture ultra-smooth element can be met.

Abstract: A system for processing a substrate is provided. The system includes a process chamber including one or more sidewalls enclosing a processing region; and a substrate support. The system further includes a passageway connected to the process chamber; and a first particle detector disposed at a first location along the passageway. The first particle detector includes an energy source configured to emit a first beam; one or more optical devices configured to direct the first beam along one or more paths, where the one or more paths extend through at least a portion of the passageway. The first particle detector further includes a first energy detector disposed at a location other than on the one or more paths. The system further includes a controller configured to communicate with the first particle detector, wherein the controller is configured to identify a fault based on signals received from the first particle detector.

Abstract: An apparatus, a method and a computer program product for defect detection in work pieces is disclosed. At least one light source is provided and the light source generates an illumination light of a wavelength range at which the work piece is transparent. A camera images the light from at least one face of the work piece on a detector of the camera by means of a lens. A stage is used for moving the work piece and for imaging the at least one face of the semiconductor device completely with the camera. The computer program product is disposed on a non-transitory, computer readable medium for defect detection in work pieces. A computer is used to execute the various process steps and to control the various means of the apparatus.

Abstract: A method of detecting a presence of foreign material in a ply is disclosed. A source of foreign material is marked with a fluorescent indicator. The source of foreign material is separated from the ply. An illumination source is provided for illuminating the ply at a different wavelength than the fluorescent indicator fluoresces so that the ply reflects light at a different wavelength. A sensor detects illumination of the ply and fluorescent indicator included in the foreign material disposed upon the ply. Differences in light reflected from the ply and fluorescence of the indicator disposed in the foreign material are detected thereby identifying existence of the foreign material in the ply.