Abstract: An optical system is presented for use in measuring in patterned structures having vias. The optical system comprises an illumination channel for propagating illuminated light onto the structure being measured; a detection channel for collecting light returned from the illuminated structure to a detection unit; and an attenuation assembly accommodated in the illumination and detection channels and being configured and operable for selectively attenuating light propagating along the detection channel, the attenuation creating a predetermined condition for the selectively attenuated light, said predetermined condition being defined by a predetermined ratio between a first light portion corresponding to a dark field condition and a second light portion corresponding to a bright field condition in said selectively attenuated light, detected selectively attenuated light being therefore indicative of at least one parameter of the via being illuminated.

Abstract: A contribution to a wafer level critical dimension distribution from a scanner of a lithography system can be determined based on measured wafer level critical dimension uniformity distribution and a contribution to the wafer level critical dimension distribution from a photo mask. Light transmission (104) across the photo mask (162) can be measured, a transmittance variation distribution of the photo mask can be determined, and the contribution to the wafer level critical dimension distribution from the photo mask (162) can be determined (132) based on the transmittance variation distribution of the photo mask.

Abstract: A surface scanning wafer inspection system with independently adjustable scan pitch and associated methods of operation are presented. The scan pitch may be adjusted independently from an illumination area on the surface of a wafer. In some embodiments, scan pitch is adjusted while the illumination area remains constant. For example, defect sensitivity is adjusted by adjusting the rate of translation of a wafer relative to the rate of rotation of the wafer without additional optical adjustments. In some examples, the scan pitch is adjusted to achieve a desired defect sensitivity over an entire wafer. In other examples, the scan pitch is adjusted during wafer inspection to optimize defect sensitivity and throughput. In other examples, the scan pitch is adjusted to maximize defect sensitivity within the damage limit of a wafer under inspection.

Abstract: A system, that includes a hybrid sensor that comprises: a monochromatic portion that is arranged to obtain a monochromatic image of a first area of an object; a multiple-color portion that is arranged to obtain a multi-colored image of a second area of the object; wherein the monochromatic portion comprises monochromatic sensing elements that sense radiation of a same frequency band; wherein the multiple-color portion comprises color sensing elements of different types, wherein different types of color sensing elements are associated with different frequency bands.

Abstract: A surface inspection apparatus includes a blocking unit included in a subsequent processing unit that groups data items into having an arbitrary number of data items. The subsequent processing unit acquires a data item from each of the blocks. The blocking unit changes, in accordance with an instruction transmitted from a state monitoring unit, the number of data items to be blocked. A threshold processing unit acquires data items from the blocking unit that have values larger than a threshold, and transmits the data items to a memory. The state monitoring unit monitors an available capacity of the memory. When the state monitoring unit detects a reduction in the available capacity of the memory, it causes the blocking unit to increase the number of data items to be blocked into each of the blocks so that data does not overflow from the memory.

Abstract: An inspection apparatus comprising, a Rochon prism configured to branch the light transmitted through a half-wave plate, a first sensor and a second sensor for acquiring an optical image of a pattern of the sample, the branched light being incident to the first sensor and the second sensor, a light quantity acquisition unit configured to acquire a light quantity ratio (1:A) of the second sensor to the first sensor using the optical image, and to obtain an angle ? of the half-wave plate such that the light quantity ratio becomes A:1, an angle controller configured to receive information on the angle ? from the light quantity acquisition unit to control an angle of the half-wave plate, a light source controller configured to control a light quantity of the light source such that each of the light quantity values becomes a target value.

Abstract: A foreign substance detection method includes: judging the presence/absence of a foreign substance by measuring a surface condition of a substrate; measuring a surface condition of a second substrate different from the substrate upon replacing the substrate on the chuck with the second substrate, when it is judged in the judging that a foreign substance exists; and determining whether an adhering location of the foreign substance determined to exist in the judging is the substrate, based on a measurement result obtained in the measurement.

Abstract: A method of inspecting defects of a sample on a movable table includes a first step for, on a basis of position information of the defects which is previously detected by an other inspection system, driving the table so that the defects come into a viewing field of an optical microscope having a focus which is adjusted, a second step for re-detecting the defects to obtain a first detection result, a third step for correcting the position information of defects on a basis of position information of the re-detected defects, and a fourth step for reviewing the defects whose position information is corrected to obtain a second detection result. At the second step, re-detecting is performed using reflection light or scattered light from the sample which passes an optical filter which includes a light shielding portion and a light transmitting portion.

Abstract: According to one embodiment, an inspecting apparatus is provided with a contact position obtaining unit and an inspection status determining unit. The contact position obtaining unit obtains, by using an inspection result of whether there is a particle on an inspection surface of a holding object and coordinate information of a convex portion in an electrostatic chuck holding mechanism, a contact position of the inspection surface with the convex portion. The inspection status determining unit determines whether a size of the particle adhering to a contact region with the convex portion of the inspection surface is within an allowable range by using a first determining criterion value and determines whether the size of the particle adhering to a non-contact region with the convex portion of the inspection surface is within an allowable range by using a second determining criterion value larger than the first determining criterion value.

Abstract: An invention being applied is a defect detecting apparatus that has: an illuminating optical system with a laser light source for irradiating a sample on whose surface a pattern is formed with light; a detecting optical system with a sensor for detecting light generated from the sample illuminated by the illuminating optical system; and a signal processing unit that extracts a defect from an image based on the light detected by the detecting optical system, in which an amplification rate of the sensor is dynamically changed during a time when the light is detected by the detecting optical system.

Abstract: A particulate contamination measurement method and apparatus are discussed. The method, for example, comprises pressing a measurement surface (5) of a polyurethane elastomer (2) against a surface (7) to be 2 measured, removing the polyurethane elastomer from the surface without leaving residues, then using an optical apparatus (11) to detect particles (8) which have been removed by the polyurethane elastomer from the surface and which have become attached to the polyurethane elastomer.

Abstract: Disclosed are methods and apparatus for performing inspection or metrology of a semiconductor device. The apparatus includes a plurality of laser diode arrays that are configurable to provide an incident beam having different wavelength ranges. At least some of the laser diode arrays form two dimensional stacks that have different wavelength ranges from each other. The apparatus also includes optics for directing the incident beam towards the sample, a detector for generating an output signal or image based on an output beam emanating from the sample in response to the incident beam, and optics for directing the output beam towards the detector. The apparatus further includes a controller for configuring the laser diode arrays to provide the incident beam at the different wavelength ranges and detecting defects or characterizing a feature of the sample based on the output signal or image.

Abstract: The disclosed device, which, using an electron microscope or the like, minutely observes defects detected by an optical appearance-inspecting device or an optical defect-inspecting device, can reliably insert a defect to be observed into the field of an electron microscope or the like, and can be a device of a smaller scale. The electron microscope, which observes defects detected by an optical appearance-inspecting device or by an optical defect-inspecting device, has a configuration wherein an optical microscope that re-detects defects is incorporated, and a spatial filter and a distribution polarization element are inserted at the pupil plane when making dark-field observations using this optical microscope.

Abstract: The invention may be embodied in a time delay integration (TDI) based sensor wafer inspection system that introduces controlled blur into the sampled image to suppress high spectral frequencies and thereby mitigate the occurrence of aliasing in the sampled image. Image blur may be introduced in the scan direction by desynchronizing the image motion (scan rate) from the charge transfer rate within the TDI sensor (sample clock rate). The scan rate may be desynchronized from the TDI sample clock rate by altering the speed of wafer movement, the sample clock rate, or the magnification of the imaging optics. Image blur may be introduced in the cross-scan direction by imparting a small alignment difference between the direction of image motion (image scan direction) and the direction that charges transfer within the TDI sensor (sensor direction).

Abstract: To increase the illumination efficiency by facilitating the change of the incident angle of illumination light with a narrow illumination width according to an inspection object and enabling an illumination region to be effectively irradiated with light, provided is a defect inspection method for obliquely irradiating a sample mounted on a table that is moving continuously in one direction with illumination light, collecting scattered light from the sample obliquely irradiated with the illumination light, detecting an image of the surface of the sample formed by the scattered light, processing a signal obtained by detecting the image formed by the scattered light, and extracting a defect candidate, wherein the oblique irradiation of the light is implemented by linearly collecting light emitted from a light source, and obliquely projecting the collected light onto the surface of the sample, thereby illuminating a linear region on the surface of the sample.

Abstract: A defect inspection method includes: illuminating an area on surface of a specimen as a test object under a specified illumination condition; scanning a specimen to translate and rotate the specimen; detecting scattering lights to separate each of scattering lights scattered in different directions from the illuminated area on the specimen into pixels to be detected according to a scan direction at the scanning a specimen and a direction approximately orthogonal to the scan direction; and processing to perform an addition process on each of scattering lights that are detected at the step and scatter approximately in the same direction from approximately the same area of the specimen, determine presence or absence of a defect based on scattering light treated by the addition process, and compute a size of the determined defect using at least one of the scattering lights corresponding to the determined defect.

Abstract: A method and apparatus are disclosed for providing image data for generating an image of a region of a target object. The method includes the steps of providing incident radiation, focusing the radiation downstream or upstream of a target object and via at least one detector located downstream of a focusing element, detecting an intensity of radiation scattered by the target object at an observation plane offset from a back focal plane associated with the focusing element.

Abstract: In one embodiment, a semiconductor target for detecting overlay error between two or more successive layers of a substrate or between two or more separately generated patterns on a single layer of a substrate is disclosed. The target comprises at least a plurality of a plurality of first grating structures having a course pitch that is resolvable by an inspection tool and a plurality of second grating structures positioned relative to the first grating structures. The second grating structures have a fine pitch that is smaller than the course pitch, and the first and second grating structures are both formed in two or more successive layers of a substrate or between two or more separately generated patterns on a single layer of a substrate. The first and second gratings have feature dimensions that all comply with a predefined design rules specification.

Abstract: When the intensity of scattering light from a defect on a sample becomes very low according to the diameter of the defect, the dark noise from a sensor device itself accounts which a large proportion of the detected signal outputted from the sensor and thus it is difficult to detect minute defects. Furthermore, since a laser light source is pulsed into oscillation, pulse components from the laser light source are superimposed on the detected signal outputted from the sensor, and therefore it is difficult to detect defects with high accuracy.

Abstract: A scatterometry tool including an illumination source for directing a light beam into a first optical beam shaping and positioning element at an illumination pupil plane of the tool where the light beam is modulated and directed to an objective lens system having a high numerical aperture. The objective receiving the modulated light beam and directing it onto a target to generate a scattering signal. The objective lens collects the scattering signal and directs it to a second optical beam shaping and positioning element at a collection pupil plane where the signal is modulated and then directed to detectors for receiving and processing the signal to determine surface characteristics of the target.

Abstract: This invention implements reduction in the amount of background-scattered light from a semiconductor wafer surface and highly sensitive inspection, without increasing the number of detectors. A surface inspection apparatus that detects defects on the surface of an object (semiconductor wafer surface) to be inspected, by irradiating the surface of the object with a beam of light such as laser light and detecting the light reflected or scattered from the surface; wherein a widely apertured lens with an optical Fourier transform function is disposed between the object to be inspected and a detector, a filter variable in position as well in aperture diameter is provided on a Fourier transform plane, and background-scattered light from the semiconductor wafer surface is effectively blocked, whereby only a signal from a defect such as a foreign substance is detected.

Abstract: Disclosed are methods and apparatus for performing inspection or metrology of a semiconductor device. The apparatus includes a plurality of laser diode arrays that are configurable to provide an incident beam having different wavelength ranges. The apparatus also includes optics for directing the incident beam towards the sample, a detector for generating an output signal or image based on an output beam emanating from the sample in response to the incident beam, and optics for directing the output beam towards the detector. The apparatus further includes a controller for configuring the laser diode arrays to provide the incident beam at the different wavelength ranges and detecting defects or characterizing a feature of the sample based on the output signal or image.

Abstract: Detection of periodically repeating nanovoids is indicative of levels of substrate contamination and may aid in reduction of contaminants on substrates. Systems and methods for detecting nanovoids, in addition to, systems and methods for cleaning and/or maintaining cleanliness of substrates are described.

Abstract: The field of view of an objective lens is divided into two areas, and a transmission image of a photomask and a composite image obtained by optically synthesizing a transmission image and a reflection image of the photomask are picked up in parallel. A drop image generated at an edge portion of a pattern portion in the composite image is deleted by limiter processing or masking processing, or is deleted by using primary-differentiated signals of a composite image signal and a transmission image signal.

Abstract: A surface scanning wafer inspection system with independently adjustable scan pitch and associated methods of operation are presented. The scan pitch may be adjusted independently from an illumination area on the surface of a wafer. In some embodiments, scan pitch is adjusted while the illumination area remains constant. For example, defect sensitivity is adjusted by adjusting the rate of translation of a wafer relative to the rate of rotation of the wafer without additional optical adjustments. In some examples, the scan pitch is adjusted to achieve a desired defect sensitivity over an entire wafer. In other examples, the scan pitch is adjusted during wafer inspection to optimize defect sensitivity and throughput. In other examples, the scan pitch is adjusted to maximize defect sensitivity within the damage limit of a wafer under inspection.

Abstract: To effectively utilize the polarization property of an inspection subject for obtaining higher inspection sensitivity, for the polarization of lighting, it is necessary to observe differences in the reflection, diffraction, and scattered light from the inspection subject because of polarization by applying light having the same elevation angle and wavelength in the same direction but different polarization. According to conventional techniques, a plurality of measurements by changing polarizations is required to cause a prolonged inspection time period that is an important specification of inspection apparatuses.

Abstract: A method for 3-dimensional vision inspection of objects, such as microelectronic components, which have protrusions as features to be inspected, such as input/output contact balls, is disclosed. The method comprises the steps of determining interior and exterior parameters of a stereo camera system, forming a rectified stereo camera system with a rectified camera coordinate system from the parameters of the stereo cameras determined above. A pair of images of the object having a plurality of co-planar protrusions on one surface is captured by the stereo cameras system and is transformed into the rectified coordinate system to form a pair of rectified images. Conjugate points of each protrusion are then determined in the rectified images for the measurement of its location, co-planarity and height. Various configurations of the apparatus for capturing the images and processing the image data are also disclosed.

Abstract: The field of view of an objective lens is divided into two areas, and a transmission image of a photomask and a composite image obtained by optically synthesizing a transmission image and a reflection image of the photomask are picked up in parallel. A drop image generated at an edge portion of a pattern portion in the composite image is deleted by limiter processing or masking processing, or is deleted by using primary-differentiated signals of a composite image signal and a transmission image signal.

Abstract: Various metrology systems and methods for high aspect ratio and large lateral dimension structures are provided. One method includes directing light to one or more structures formed on a wafer. The light includes ultraviolet light, visible light, and infrared light. The one or more structures include at least one high aspect ratio structure or at least one large lateral dimension structure. The method also includes generating output responsive to light from the one or more structures due to the light directed to the one or more structures. In addition, the method includes determining one or more characteristics of the one or more structures using the output.

Abstract: Disclosed is a visual inspection apparatus for a glass substrate of a liquid crystal display, comprising an inspection platform and at least two slide rails. The glass substrate for inspection is fixedly located on an inspection platform main body. The slide rails are installed at two adjacent sides of the main body leastwise. Length directions of the slide rails are parallel with a level of the main body. The lengths of the two adjacent slide rails are mutually perpendicular; the visual inspection apparatus further comprises a coordinate reader. The coordinate reader is slidably jointed to the slide rails and employed to cross above the level of the main body to form a locating point. An inspector reads a coordinate of the locating point to acquire a corresponding coordinate of the glass substrate. The present invention also provides an inspection method for a glass substrate of a liquid crystal display.

Abstract: A method of thermally treating a wafer includes loading a wafer into a process chamber having one or more regions of uniform temperature gradient and one or more regions of non-uniform temperature gradient. A defect is detected in the wafer. The wafer is aligned to position the defect within one of the one or more regions of uniform temperature gradient. A rapid thermal process is performed on the wafer in the process chamber while the defect is positioned within one of the one or more regions of uniform temperature gradient.

Abstract: A surface defect inspection apparatus includes a light source that emits light to a first position on a surface of a target at an angle inclined with respect to the surface of the target, a first photodetector that detects first reflected light of the light from the light source, the first reflected light being reflected at the first position, a second photodetector that detects second reflected light of the light from the light source, the second reflected light being reflected at a second position, the second position being closer to the light source than the first position and being separated from the surface of the target by a given distance, and a determining unit that determines whether or not foreign matter is present on the surface of the target on a basis of detection results obtained from the first photodetector and the second photodetector.

Abstract: A beam deflection device including an aluminum disc containing a plurality of lasers, each laser projecting a laser beam substantially along one of the ‘X’, ‘Y’, and ‘Z’ axes of a structural beam to which the device is attached. Wiring is attached to each of the plurality of lasers to provide power and transmit data. Passageways are provided in the solid disc to route the wiring to the exterior. A suction cup on a surface of the device allows it to be attached to the beam by pressing the device against a flat surface area of the beam.

Abstract: An optical inspector includes a radiating source, a time varying beam reflector, a telecentric scan lens, a first waveplate, a second waveplate, a polarizing beam splitter, and a detector. The radiating source irradiates the first waveplate with a linearly polarized source beam generating a circularly polarized source beam, which irradiates a first position of on the time varying beam reflector. The time varying beam reflector directs the source beam to the telecentric scan lens, which in turn directs the source beam to a transparent sample. The reflected radiation from the transparent sample is directed via the telecentric lens and the time varying beam reflector to the second waveplate, which converts circularly polarized reflected radiation to linearly polarized reflected radiation including radiation that is vertically polarized and radiation that is horizontally polarized.

Abstract: An optical inspector includes a radiating source, a time varying beam reflector, a telecentric scan lens, a separating mirror, and a first and second detector. The radiating source is configured to irradiate a first position on the time varying beam reflector with a source beam. The time varying beam reflector directs the source beam to the telecentric scan lens, which in turn directs the source beam to a sample. The telecentric scan lens directs specular reflection and near specular scattered radiation to the time varying beam reflector. The specular reflection is directed by the separating mirror to the first detector. The near specular scattered radiation is not reflected by the separating mirror and propagates to the second detector. In response, the optical inspector determines the total reflectivity, the surface slope, or the near specular scattered radiation intensity of the sample.

Abstract: A system to detect and classify defects on a surface of a substrate. A first targeting assembly directs radiation in a first beam onto the substrate. A first collecting assembly collects first radiation specularly reflected from the substrate and produces first signals, a second collecting assembly collects first radiation scattered from the surface of the substrate by defects and not micro-roughness and produces second signals, and a third collecting assembly collects first radiation scattered from the surface of the substrate by defects and micro-roughness and produces third signals. A second targeting assembly directs radiation in a second beam onto the substrate. A fourth collecting assembly collects second radiation scattered from the substrate and produces fourth signals. A processor receives the first, second, third, and fourth signals.

Abstract: Device for inspecting defects in semiconductor wafers, comprising a member for detecting surface defects using variations in the slope of a surface of the wafer, a member for detecting surface defects using variations in the light intensity reflected by a surface of the wafer, at a plurality of points, a member for detecting light intensity scattered by the surface of the wafer, a light source, and a detecting and classifying mechanism connected upstream of said detecting members.

Abstract: In one embodiment, a surface inspection system comprises a radiation source that emits a broadband radiation beam, a radiation directing assembly to target radiation onto a surface of an object, the radiation directing assembly comprising a radiation collection assembly to collect radiation reflected from the surface of the object, the radiation collection assembly comprising at least one multi-chip detector array assembly positioned within a field of view of the inspection system.

Abstract: A method of inspecting defects and a device inspecting defects of detecting defects at high sensitivity and high capture efficiency even on various patterns existing on a wafer. In the device of inspecting defects, an illumination optical system is formed of two systems of a coherent illumination of a laser 5 and an incoherent illumination of LEDs 6a, 6b, 6c and 6d, and light paths are divided in a detecting system corresponding to respective illumination light, spatial modulation elements 55a and 55b are arranged to detecting light paths, respectively, scattered light inhibiting sensitivity is shielded by the spatial modulating elements 55a and 55b, scattered light transmitted through the spatial modulation elements 55a and 55b is detected by image sensors 90a and 90b arranged to respective light paths, and images detected by these two image sensors 90a and 90b are subjected to a comparison processing, thereby determining a defect candidate.

Abstract: Proposed is a defect inspection method whereby: illuminating light having a substantially uniform illumination intensity distribution in one direction of a sample surface irradiated on the sample surface; multiple scattered light components, which are output in multiple independent directions, are detected among the scattered light from the sample surface and multiple corresponding scattered light detection signals are obtained; at least one of the multiple scattered light detection signals is processed and the presence of defects is determined; at least one of the multiple scattered light detection signals that correspond to each of the points determined by the processing as a defect is processed and the dimensions of the defect are determined; and the position and dimensions of the defect on the sample surface, at each of the points determined as a defect, are displayed.

Abstract: An optical inspector includes a radiating source, a time varying beam reflector, a telecentric scan lens, a separating minor, and a first and second detector. The radiating source is configured to irradiate a first position on the time varying beam reflector with a source beam. The time varying beam reflector directs the source beam to the telecentric scan lens, which in turn directs the source beam to a sample. The telecentric scan lens directs specular reflection and near specular scattered radiation to the time varying beam reflector. The specular reflection is directed by the separating mirror to the first detector. The near specular scattered radiation is not reflected by the separating minor and propagates to the second detector. In response, the optical inspector determines the total reflectivity, the surface slope, or the near specular scattered radiation intensity of the sample.

Abstract: A pattern inspection apparatus in accordance with one aspect of the present invention includes a laser light source configured to emit a laser light, an integrator lens configured to input the laser light, and form a light source group by dividing the laser light inputted, a scattering plate, arranged at a front side of an incident surface of the integrator lens, configured to scatter the laser light which is to enter the integrator lens, and an inspection unit configured to inspect a defect of a pattern on an inspection target object where a plurality of figure patterns are formed, by using the laser light having passed through the integrator lens as an illumination light.

Abstract: The disclosure is directed to a system and method of managing illumination energy applied to illuminated portions of a scanned wafer to mitigate illumination-induced damage without unnecessarily compromising SNR of an inspection system. The wafer may be rotated at a selected spin frequency for scanning wafer defects utilizing the inspection system. Illumination energy may be varied over at least one scanned region of the wafer as a function of radial distance of an illuminated portion from the center of the wafer and the selected spin frequency of the wafer. Illumination energy may be further applied constantly over one or more scanned regions of the wafer beyond a selected distance from the center of the wafer.

Abstract: An inspection system (9) includes an idler wheel (61) that is coupled to a fabrication system (8) and is in contact with a backing layer (65) of an applied material (64), A rotation sensor (63) monitors the idler wheel (61) and generates a rotational signal. A controller (24) is coupled to the rotation sensor (63) and determines a characteristic of one or more flaws and FOD (19) on a composite structure (12) in response to the rotation signal.

Abstract: A luminous flux branching element includes a transparent base member arranged diagonally to an optical axis and having an incidence plane and an emission plane parallel to each other. Incident light from the incidence plane is split into a main luminous flux emitted from an emission position on the emission plane and a branched luminous flux emitted from a branch position apart from the emission position and having a smaller light quantity than of the main luminous flux. A reflecting member is arranged on the incidence plane to cause the incidence plane to reflect reflected light from the emission plane. A non-coat region in which antireflection-treatment is not performed is formed in a region of the emission plane where the incident light from the incidence plane is reached, and antireflection-treatment is performed in the emission plane excluding the non-coat region and the incidence plane.

Abstract: A surface defect inspection apparatus and method is provided which illuminates a plurality of beams set to different intensity values to a sample. Scattered light from the plurality of beams is detected and processed to analyze the surface defects.

Abstract: An aspect of the invention provides a defect inspection apparatus being able to accurately inspect a micro foreign matter or defect at a high speed for an inspection target substrate in which a repetitive pattern and a non-repetitive pattern are mixed. In a foreign matter anti-adhesive means 180, a transparent plate 187 is placed on a placement table 34 through a frame 185. In the foreign matter anti-adhesive means 180, a shaft 181 which is rotatably supported by two columnar supports 184 fixed onto a base 186 is coupled to a motor 182 by a coupling 183. The shaft 181 is inserted into a part of a frame 185 between the two columnar supports 184 such that the frame 185 and the transparent plate 187 are turnable about the shaft 181. Therefore, the whole of the frame 185 is opened and closed in a Z-direction about the shaft 181, and a wafer 1 on the placement table 34 can be covered with the frame 185 and the transparent plate 187.

Abstract: Substrate inspection apparatus, in which the acquisition of the inspection data for a defect and the acquisition of the focus data of the objective lens are performed in parallel, includes an autofocus apparatus for controlling position of the objective lens along its optical axis. The autofocus apparatus includes a focus error detection unit and a focus control signal generation unit for generating a focus control signal for controlling the position of the objective lens for each scan line using a focus data signal composed of an objective position signal or the objective position signal to which a focus error signal is added. When “i” is assumed as a positive integer and “m” is as a natural number, the focus data signal which was acquired during the scanning period of i-th scan line is used to produce the focus control signal used to scan the (i+2m)-th scan line.

Abstract: The three dimensional (3-D) locations of splices in pre-preg tows placed by an automatic fiber placement machine to form a laminated composite structure are mapped to allow visualization of alignment patterns in the splices.

Abstract: A method and equipment which includes an illustrated-spot illumination-distribution data table for storing an illumination distribution within an illustrated spot and which calculates a coordinate position for a particle or a defect and the diameter of the particle on the basis of detection light intensity data about the particle or defect and the illustrated-spot illumination-distribution data table. Thus, even when the illumination distribution within the illustrated spot based on an actual illumination optical system is not a Gaussian distribution, the calculation of the particle diameter of the detected particle or defect and the calculation of a coordinate position on the surface of an object to be inspected can be attained with an increased accuracy.