Abstract: An assembly comprises a plurality of laterally spaced front blocks, a magnetic post coupling each of the front blocks to a common back bar, and a common front bar magnetically coupled to the back bar. A write gap spacer is positioned between the front bar and each of the plurality of front blocks, and a write gap element comprising write gaps couples the front bar to each front block across the write gap spacer. A coil is configured to generate magnetic flux in each magnetic post, and the front blocks are configured to direct the magnetic flux across the write gaps.

Abstract: A process (and the structure resulting therefrom) is described for manufacturing a magnetic write head in which there is no physical interface between the first and second trailing shields. This is achieved by laying down a sacrificial layer which is patterned to extend inwards towards the top yoke whereby the dimensions and shapes of the shields are defined.

Abstract: A thin-film magnetic head includes a first magnetic layer, a flat, spiral-shaped coil, a toroidal-shaped insulating layer covering the coil, and a second magnetic layer touching the insulating layer and disposed to sandwich part of the coil between itself and the first magnetic layer. The second magnetic layer has a recessed portion that enters a space inside the insulating layer. In the recessed portion, the bottom surface of the second magnetic layer includes a first flat portion a part of which touches the top surface of the first magnetic layer, while the top surface of the second magnetic layer includes a second flat portion located in the space and substantially parallel to the first flat portion. In a cross section that divides each of the first and second magnetic layers into two equal portions, the second flat portion is 0.

Abstract: A method for fabricating a magnetic write head with a coil with a high aspect ratio using a Chemical Vapor Deposition process such as Atomic Layer Deposition (ALD), High Speed ALD, Plasma Enhanced ALD (PEALD), Plasma Enhanced Chemical Vapor Deposition (PECVD) or Low Pressure Chemical Vapor Deposition (LPCVD) to form encapsulating films over the coils without voids is disclosed. Materials which can be used for encapsulation include Al2O3, SiO2, AlN, Ta2O5, HfO2, ZrO2, and YtO3. The use of an ultra-conformal deposition process allows the pitch of the coils to be smaller than it is possible in the prior art. The method also allows materials with a smaller coefficient of thermal expansion than hardbake photoresist to be used with resulting improvements in thermal protrusion characteristics.

Abstract: A method and apparatus for forming a high conductance, high aspect ratio structure in a single low temperature copper chemical vapor deposition step. A trench for a winding of a coil is formed by forming a first length of the trench in the insulation layer. The first length of the trench forms a first portion of the winding of the coil in a confined area proximate a yoke region. A second length of trench is formed in the insulation layer extending away from the first length of the trench and the yoke region. The second length of trench includes parallel trenches for forming a second portion of the winding in a nonconfined area. A metal is deposited into the first length of the trench and the second length of the trench to form the first and second portions of the winding of the coil.