Electrical Patents (Class 361/281)
  • Patent number: 10534466
    Abstract: A pressure sensor may be provided that includes: an electrode; a drive unit which applies a drive signal to the electrode; a sensing unit which receives, through the electrode, a reception signal including information on a capacitance which is between the electrode and a reference potential layer and is changed according to a relative distance between the electrode and the reference potential layer spaced from the electrode; and a first impedance between the drive unit and the electrode, and a second impedance between the sensing unit and the electrode.
    Type: Grant
    Filed: May 10, 2016
    Date of Patent: January 14, 2020
    Assignee: HIDEEP INC.
    Inventors: Jongsik Kim, Bonkee Kim, Seyeob Kim, Sunyoung Kwon
  • Patent number: 10332687
    Abstract: A tunable capacitor that incorporates teachings of the subject disclosure may include: a substrate; a first dielectric layer over the substrate; a plurality of bias lines encapsulated between the substrate and the tunable dielectric layer; a first metal layer over the tunable dielectric layer (wherein the first metal layer has a plurality of first gaps); an upper bias layer over the first metal layer (herein each of a plurality of portions of the upper bias layer extend through a respective one of the plurality of first gaps to come into contact with the first dielectric layer, and wherein at least a second gap is disposed in the upper bias layer); and a second metal layer (wherein a portion of the second metal layer extends through the second gap to come into contact with the first metal layer). Other embodiments are disclosed.
    Type: Grant
    Filed: October 23, 2017
    Date of Patent: June 25, 2019
    Assignee: BlackBerry Limited
    Inventors: Marina Zelner, Andrew Vladimir Claude Cervin
  • Patent number: 10183857
    Abstract: In one embodiment, a MEMS sensor includes a first fixed electrode in a first layer, a cavity defined above the first fixed electrode, a membrane extending over the cavity, a first movable electrode defined in the membrane and located substantially directly above the first fixed electrode, and a second movable electrode defined at least partially within the membrane and located at least partially directly above the cavity.
    Type: Grant
    Filed: August 19, 2013
    Date of Patent: January 22, 2019
    Assignee: Robert Bosch GmbH
    Inventors: Andrew Graham, Ando Feyh, Bernhard Gehl
  • Patent number: 9391214
    Abstract: A MOS varactor structure comprising a semiconductor body having a well region and a plurality of gate electrodes and a plurality of cathode electrodes arranged over the well region, wherein the gate electrodes comprise elongate pads, and the plurality of cathode contacts are connected by a cathode connection pattern, the cathode connection pattern comprising a plurality of arms, each of the plurality of arms arranged to extend over a part of a respective gate electrode pad.
    Type: Grant
    Filed: March 2, 2015
    Date of Patent: July 12, 2016
    Assignee: NXP B.V.
    Inventors: Olivier Tesson, Mathieu Perin, Laure Rolland du Roscoat
  • Patent number: 9373447
    Abstract: Utilizing a variable capacitor for RF and microwave applications provides for multiple levels of intra-cavity routing that advantageously reduce capacitive coupling. The variable capacitor includes a bond pad that has a plurality of cells electrically coupled thereto. Each of the plurality of cells has a plurality of MEMS devices therein. The MEMS devices share a common RF electrode, one or more ground electrodes and one or more control electrodes. The RF electrode, ground electrodes and control electrodes are all arranged parallel to each other within the cells. The RF electrode is electrically connected to the one or more bond pads using a different level of electrical routing metal.
    Type: Grant
    Filed: August 17, 2012
    Date of Patent: June 21, 2016
    Assignee: CAVENDISH KINETICS, INC.
    Inventors: Roberto Gaddi, Robertus Petrus Van Kampen, Richard L. Knipe, Anartz Unamuno
  • Patent number: 9036327
    Abstract: An electronic element includes a fixed portion, and a movable portion which is movable with respect to the fixed portion and which is provided to generate a spring force to make restoration to a predetermined position. The fixed portion is provided with a first driving electrode and a first signal electrode. The movable portion is provided with a second driving electrode and a second signal electrode. An electrostatic force is generated between the first driving electrode and the second driving electrode by a voltage applied therebetween so that the electrostatic force resists against the spring force; and the first and second driving electrodes and the first and second signal electrodes are arranged so that the electrostatic force is generated in a direction in which a spacing distance between the first and second signal electrodes is widened.
    Type: Grant
    Filed: April 17, 2013
    Date of Patent: May 19, 2015
    Assignee: Nikon Corporation
    Inventors: Hiroshi Konishi, Junji Suzuki
  • Patent number: 9019687
    Abstract: The present subject matter relates to the use of current splitting and routing techniques to distribute current uniformly among the various layers of a device to achieve a high Q-factor. Such current splitting can allow the use of relatively narrow interconnects and feeds while maintaining a high Q. Specifically, for example a micro-electromechanical systems (MEMS) device can comprise a metal layer comprising a first portion and a second portion that is electrically separated from the first portion. A first terminus can be independently connected to each of the first portion and the second portion of the metal layer, wherein the first portion defines a first path between the metal layer and the first terminus, and the second portion defines a second path between the metal layer and the first terminus.
    Type: Grant
    Filed: June 7, 2012
    Date of Patent: April 28, 2015
    Assignee: Wispry, Inc.
    Inventors: Arthur S. Morris, III, Saravana Natarajan, Dana DeReus
  • Patent number: 9019007
    Abstract: A highly linear, variable capacitor array constructed from multiple cells. Each cell includes a pair of passive, capacitor components connected in anti-parallel. The capacitor components may be Metal Oxide Semiconductor (MOS) capacitors. A control circuit applies bias voltages to bias voltage terminals associated with each capacitor component, to thereby control the overall capacitance of the array.
    Type: Grant
    Filed: August 30, 2013
    Date of Patent: April 28, 2015
    Assignee: Newlans, Inc.
    Inventors: Dev V. Gupta, Zhiguo Lai
  • Patent number: 8988849
    Abstract: A varactor includes a first PTC region, which comprises a ceramic material with a positive temperature coefficient with respect to the resistance. The varactor also includes a capacitor region that includes a first electrode, a second electrode, and a first dielectric layer arranged between the first electrode and the second electrode. The first PTC region and the capacitor region are connected thermally conductively to one another. The capacitance of the capacitor region can be changed by applying a bias to the first PTC region, the capacitor region or to the first PTC region and the capacitor region.
    Type: Grant
    Filed: December 21, 2010
    Date of Patent: March 24, 2015
    Assignee: EPCOS AG
    Inventor: Andrea Testino
  • Patent number: 8973250
    Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. The method of forming a MEMS structure includes forming a wiring layer on a substrate comprising actuator electrodes and a contact electrode. The method further includes forming a MEMS beam above the wiring layer. The method further includes forming at least one spring attached to at least one end of the MEMS beam. The method further includes forming an array of mini-bumps between the wiring layer and the MEMS beam.
    Type: Grant
    Filed: June 20, 2011
    Date of Patent: March 10, 2015
    Assignee: International Business Machines Corporation
    Inventors: Christopher V. Jahnes, Anthony K. Stamper
  • Publication number: 20150061072
    Abstract: A variable capacitance semiconductor structure is disclosed. Embodiments include a capacitor having three plates, a top plate, a middle plate, and a bottom plate. The top plate serves as a positive plate. The middle and bottom plates serve as ground plates for the capacitor. A switching circuit selects between the middle plate and the bottom plate for use as the ground plate of the capacitor. The middle plate is slotted, allowing electric fields to penetrate through the middle plate to the bottom plate. The slots prevent the electric fields from terminating at the middle plate. A different capacitance value can be selected, depending on whether the middle plate or bottom plate is selected as the ground plate. Logic circuitry is configured to control the selection of plates to achieve a variety of capacitance values.
    Type: Application
    Filed: September 5, 2013
    Publication date: March 5, 2015
    Applicant: International Business Machines Corporation
    Inventors: Shyam Parthasarathy, Ananth Sundaram, Balaji Swaminathan
  • Patent number: 8922974
    Abstract: Tunable MEMS resonators having adjustable resonance frequency and capable of handling large signals are described. In one exemplary design, a tunable MEMS resonator includes (i) a first part having a cavity and a post and (ii) a second part mated to the first part and including a movable layer located under the post. Each part may be covered with a metal layer on the surface facing the other part. The movable plate may be mechanically moved by a DC voltage to vary the resonance frequency of the MEMS resonator. The cavity may have a rectangular or circular shape and may be empty or filled with a dielectric material. The post may be positioned in the middle of the cavity. The movable plate may be attached to the second part (i) via an anchor and operated as a cantilever or (ii) via two anchors and operated as a bridge.
    Type: Grant
    Filed: January 28, 2013
    Date of Patent: December 30, 2014
    Assignee: QUALCOMM Incorporated
    Inventors: Je-Hsiung Lan, Evgeni P Gousev, Wenyue Zhang, Manish Kothari, Sang-June Park
  • Publication number: 20140355172
    Abstract: A highly linear, variable capacitor array constructed from multiple cells. Each cell includes a pair of passive, capacitor components connected in anti-parallel. The capacitor components may be Metal Oxide Semiconductor (MOS) capacitors. A control circuit applies bias voltages to bias voltage terminals associated with each capacitor component, to thereby control the overall capacitance of the array.
    Type: Application
    Filed: August 30, 2013
    Publication date: December 4, 2014
    Applicant: NewIans, Inc.
    Inventors: Dev V. Gupta, Zhiguo Lai
  • Patent number: 8890543
    Abstract: A MEMS tunable capacitor comprises first and second opposing capacitor electrodes, wherein the second capacitor electrode is movable by a MEMS switch to vary the capacitor dielectric spacing, and thereby tune the capacitance. A tunable dielectric material and a non-tunable dielectric material are in series between the first and second electrodes. The tunable dielectric material occupies a dimension gd of the electrode spacing, and the non-tunable dielectric material occupies a dimension g of the electrode spacing. A third electrode faces the movable second electrode for electrically controlling tunable dielectric material. A controller is adapted to vary the capacitor dielectric spacing for a first continuous range of adjustment of the capacitance of the MEMS capacitor, and to tune the dielectric material for a second continuous range of adjustment of the capacitance of the MEMS capacitor, thereby to provide a continuous analogue range of adjustment including the first and second ranges.
    Type: Grant
    Filed: June 9, 2008
    Date of Patent: November 18, 2014
    Assignee: NXP B.V.
    Inventors: Peter G. Steeneken, Klaus Reimann
  • Publication number: 20140319653
    Abstract: An integrated circuit includes a substrate. A fixed main capacitor electrode is disposed in a metal layer overlying the substrate. A second main capacitor electrode is disposed in a metal layer and spaced from the fixed main capacitor electrode. A movable capacitor electrode is disposed adjacent the fixed main capacitor electrode. The movable capacitor electrode is switchable between a first configuration in which the movable capacitor electrode and fixed main capacitor electrode are mutually spaced out in such a manner as to form an auxiliary capacitor electrically connected to the main capacitor. In a second configuration, the movable capacitor electrode and the fixed main capacitor electrode are in electrical contact in such a manner as to give a second capacitive value.
    Type: Application
    Filed: April 29, 2014
    Publication date: October 30, 2014
    Applicant: STMICROELECTRONICS (ROUSSET) SAS
    Inventors: Pascal Fornara, Christian Rivero
  • Patent number: 8854792
    Abstract: An electrical contactor for use in a high voltage bus utilizes two capacitor plates and a dielectric element movable in a gap between the plates under a charging voltage applied to the plates. The dielectric element is biased to a contactor off, or open, position by a biasing element, such as a spring. Once activated, the contactor remains closed under the influence of the charging voltage across the capacitor plates, yet does not draw a current during this state. The contactor may be released by a controllable discharge circuit placed across the capacitor plates.
    Type: Grant
    Filed: September 17, 2012
    Date of Patent: October 7, 2014
    Assignee: Chrysler Group LLC
    Inventor: Adam Timmons
  • Publication number: 20140247097
    Abstract: To suppress changes in capacitance due to displacement between electrodes opposing each other across a dielectric layer, thereby allowing stable manufacturing of a capacitance device having a desired capacitance. The capacitance device according to the present invention is of a configuration including a dielectric layer (10), a first electrode (11) formed on a predetermined surface (10a) of the dielectric layer (10), and a second electrode (12) formed on a surface (10b) on the opposite side of the dielectric layer (10) from the predetermined surface (10a). The forms of the first and second electrodes (11, 12) are set so that even in the event that the first electrode (11) is relatively displaced regarding position in a predetermined direction as to the second electrode (12), the area of the opposing-electrode region between the first electrode (11) and to the second electrode (12) is unchanged.
    Type: Application
    Filed: April 11, 2014
    Publication date: September 4, 2014
    Applicant: DEXERIALS CORPORATION
    Inventors: Masayoshi KANNO, Toshiaki YOKOTA, Kazutaka HABU, Makoto WATANABE, Noritaka SATO
  • Publication number: 20140240894
    Abstract: In accordance with the present disclosure, one embodiment of a fractal variable capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure, wherein the capacitor body has an upper first metal plate with a fractal shape separated by a vertical distance from a lower first metal plate with a complementary fractal shape; and a substrate above which the capacitor body is suspended.
    Type: Application
    Filed: August 21, 2012
    Publication date: August 28, 2014
    Inventors: Amro M. Elshurafa, Ahmed Gomaa Ahmed Radwan, Ahmed A. Emira, Khaled Nabil Salama
  • Publication number: 20140225793
    Abstract: A high-frequency device includes an antenna coil, a variable capacitance element, and an RFIC. The variable capacitance element is configured by capacitor units in each of which a ferroelectric film is sandwiched between capacitor electrodes, and a capacitance value changes according to a control voltage applied between the capacitor electrodes. A control voltage application circuit configured by a plurality of resistance elements of different resistance values, and a resistance element of the variable capacitance element unit configured to apply a control voltage to the variable capacitance element are arranged in a layered manner above the capacitor unit. Thus, a variable capacitance element and a high-frequency device that includes a control voltage application circuit eliminating problems such as distortion due to active elements and growing IC size along with complication of circuit architecture, and ensuring reliability on impact due to falling or the like, are provided.
    Type: Application
    Filed: April 18, 2014
    Publication date: August 14, 2014
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Nobuo IKEMOTO, Toshiyuki NAKAISO, Katsumi TANIGUCHI, Naoki GOUCHI, Naoto IKEDA
  • Publication number: 20140218839
    Abstract: The present invention generally relates to a variable capacitor for RF and microwave applications. The variable capacitor includes a bond pad that has a plurality of cells electrically coupled thereto. Each of the plurality of cells has a plurality of MEMS devices therein. The MEMS devices share a common RF electrode, one or more ground electrodes and one or more control electrodes. The RF electrode, ground electrodes and control electrodes are all arranged parallel to each other within the cells. The RF electrode is electrically connected to the one or more bond pads using a different level of electrical routing metal.
    Type: Application
    Filed: August 17, 2012
    Publication date: August 7, 2014
    Applicant: CAVENDISH KINETICS INC.
    Inventors: Roberto Gaddi, Robertus Petrus Van Kampen, Richard L. Knipe, Anartz Unamuno
  • Publication number: 20140185181
    Abstract: A tunable capacitor includes a substrate, a movable member, a first capacitive plate, a second capacitive plate, a third capacitive plate and a set of electrode plates. The movable member is disposed on the substrate. The movable member is adapted for moving away or toward the substrate to have a first position and a second position, respectively. The first capacitive plate is disposed on the movable member and faces the substrate. The second capacitive plate and the third capacitive plate are disposed on the substrate and face the first capacitive plate. The set of electrode plates, disposed on the substrate, faces the at least one movable member. The set of electrode plates, driven by an electrical voltage, generates electrostatic force causing the movable member to be drawn from the first position to the second position thereof to correspondingly adjust capacitance between the capacitive plates.
    Type: Application
    Filed: May 10, 2013
    Publication date: July 3, 2014
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventor: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
  • Patent number: 8767373
    Abstract: The invention relates to electronic device having an operation temperature range, wherein the electronic device comprises a tunable capacitor (CST) comprising a first electrode (BE), a second electrode (TE), and a dielectric (FEL) arranged between the first electrode (BE) and the second electrode (TE). The dielectric (FEL) comprises dielectric material (FEL) having a value of a relative dielectric constant (?r) varying at least within the operation temperature range. The electronic device further comprises a temperature varying means (RES) being thermally coupled to the tunable capacitor for providing a temperature of the dielectric (FEL) causing a predetermined capacitance of the tunable capacitor (CST). The invention, which relies on the idea of varying temperature to vary a capacitance of a capacitor stack, provides an alternative tunable capacitor type for the known types.
    Type: Grant
    Filed: April 29, 2009
    Date of Patent: July 1, 2014
    Assignee: NXP, B.V.
    Inventors: Yukiko Furukawa, Klaus Reimann, Friso Jacobus Jedema, Markus Petrus Josephus Tiggelman, Aarnoud Laurens Roest
  • Publication number: 20140139968
    Abstract: A variable capacity composite component has structures connecting four variable capacitors, for example, to signal terminals in series with bias application terminals of opposite polarities facing each other, connecting a power supply terminal to the bias+ sides of the first and second variable capacitors via a first bias resistance, and also to the bias+ sides of the third and fourth variable capacitors via a second bias resistance, connecting a grounding terminal to the bias? side of the first variable capacitor via a third bias resistance, also to the bias? sides of the second and third variable capacitors via a fourth bias resistance, and also to the bias? sides of the fourth variable capacitor via a fifth bias resistance, and setting the value of the first, second, and fourth bias resistances to one-half the value of the third and fifth bias resistances.
    Type: Application
    Filed: November 15, 2013
    Publication date: May 22, 2014
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Tomokazu IKENAGA, Daiki ISHII
  • Publication number: 20140043718
    Abstract: The disclosure concerns a method for etching a PVD deposited barium strontium titanate layer, wherein a non-ionic surfactant at a concentration between 0.1 and 1 percent is added to an acid etching solution.
    Type: Application
    Filed: October 17, 2013
    Publication date: February 13, 2014
    Inventors: Vincent Caro, Davide Rodilosso
  • Publication number: 20140036406
    Abstract: A varactor comprises a substrate having sets of gate units each having parallel gate strips. The gate units are located such that the gate strips of neighbouring gate units are oriented transverse to each other. An electrically conducting gate connection layer comprises gate connection units comprising parallel gate connection strips located over the gate strips, and a cathode connection frame around each of the gate connection units. A first electrically conductive anode layer comprises first layer anode strips located parallel to the gate connection strips and connected to alternate gate connection strips, and a first anode connection frame connected to the anode strips. A second electrically conductive anode layer comprises anode strips located parallel to the gate connection strips and connected to opposite alternate gate connection strips, and a second anode connection frame connected to the second layer anode strips.
    Type: Application
    Filed: July 29, 2013
    Publication date: February 6, 2014
    Applicant: NXP B.V.
    Inventors: Olivier Tesson, Laure Rolland du Roscoat
  • Patent number: 8627566
    Abstract: A ceramic header configured to form a portion of an electronic device package includes a mounting portion configured to provide a mounting surface for an electronic device. In addition, the ceramic header includes one or more conductive input-output connectors operable to provide electrical connections from a first surface of the ceramic header to a second surface of the ceramic header. The ceramic header also includes one or more thermally polished surfaces.
    Type: Grant
    Filed: April 1, 2010
    Date of Patent: January 14, 2014
    Assignee: Texas Instruments Incorporated
    Inventors: Moody K. Forgey, Mark A. Kressley
  • Publication number: 20140009862
    Abstract: Tunable MEMS resonators having adjustable resonance frequency and capable of handling large signals are described. In one exemplary design, a tunable MEMS resonator includes (i) a first part having a cavity and a post and (ii) a second part mated to the first part and including a movable layer located under the post. Each part may be covered with a metal layer on the surface facing the other part. The movable plate may be mechanically moved by a DC voltage to vary the resonance frequency of the MEMS resonator. The cavity may have a rectangular or circular shape and may be empty or filled with a dielectric material. The post may be positioned in the middle of the cavity. The movable plate may be attached to the second part (i) via an anchor and operated as a cantilever or (ii) via two anchors and operated as a bridge.
    Type: Application
    Filed: January 28, 2013
    Publication date: January 9, 2014
    Applicant: Qualcomm Incorporated
    Inventor: Qualcomm Incorporated
  • Publication number: 20140002948
    Abstract: Disclosed is a MEMS variable capacitor including: a first electrode; a second electrode spaced apart from the first electrode; a third electrode floating above the first electrode; and an actuator including a fourth electrode facing the second electrode, a connector connecting the third electrode and the fourth electrode, and a support supporting a portion of the connector, wherein the third electrode and the connector are integrally formed with each other, and wherein a capacitance is changed by applying a voltage to the second electrode and by adjusting a gap between the first electrode and the third electrode.
    Type: Application
    Filed: June 25, 2013
    Publication date: January 2, 2014
    Inventors: Jun Bo YOON, Chang Hoon HAN, Dong Hoon CHOI, Hyun Ho YANG
  • Publication number: 20130342285
    Abstract: A variable capacitance element includes a piezoelectric substrate, a buffer layer located on the piezoelectric substrate with an orientation, a dielectric layer located on the buffer layer and having a relative dielectric constant that varies in accordance with an applied voltage, and a first electrode and a second electrode arranged to apply an electric field to the dielectric layer.
    Type: Application
    Filed: August 22, 2013
    Publication date: December 26, 2013
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Michio KADOTA, Ivoyl P. KOUTSAROFF, Tetsuya KIMURA, Hikari TOCHISHITA
  • Publication number: 20130286534
    Abstract: According to one embodiment, a variable-capacitor device includes a first MEMS variable-capacitor element, and a second MEMS variable-capacitor element including one end series-connected to one end of the first MEMS variable-capacitor element. In a down-state, a first capacitance value of the first MEMS variable-capacitor element differs from a second capacitance value of the second MEMS variable-capacitor element.
    Type: Application
    Filed: March 15, 2013
    Publication date: October 31, 2013
    Inventors: Tamio IKEHASHI, Hiroaki YAMAZAKI
  • Patent number: 8570705
    Abstract: The present subject matter relates to MEMS tunable capacitors and methods for operating such capacitors. The tunable capacitor can feature a primary stationary actuator electrode on a substrate, a secondary stationary actuator electrode on the substrate, a stationary RF signal capacitor plate electrode on the substrate, a sprung cantilever disposed over the substrate, a beam anchor connecting a first end of the sprung cantilever to the substrate, and one or more elastic springs or other biasing members connecting a second end of the sprung cantilever to the substrate, the second end being located distally from the first end. The spring cantilever can be movable between an OFF state defined by the potential difference between the stationary and moveable actuator electrodes being zero, and an ON state defined by a non-zero potential difference between the stationary and moveable actuator electrodes.
    Type: Grant
    Filed: January 14, 2011
    Date of Patent: October 29, 2013
    Assignee: Wispry, Inc.
    Inventor: Dana DeReus
  • Patent number: 8503157
    Abstract: Provided is a MEMS device that includes first and second lower electrodes on a substrate. The MEMS device also includes a first driving electrode forming a capacitance element having a first capacitance between the first lower electrode and the first driving electrode, a second driving electrode forming a capacitance element having a second capacitance between the second lower electrode and the second driving electrode, and an upper electrode supported in midair above the driving electrodes. The upper electrode moves toward the driving electrodes and has a variable third capacitance between the first driving electrode and the upper electrode and a variable fourth capacitance between the second driving electrode and the upper electrode.
    Type: Grant
    Filed: September 16, 2010
    Date of Patent: August 6, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Tamio Ikehashi
  • Publication number: 20130170092
    Abstract: A variable capacitance device includes a substrate, a beam portion, lower drive electrodes and upper drive electrodes. The beam portion is made of an insulating material and is connected to the substrate via an anchor portion. In the lower drive electrode and the upper drive electrode, electrostatic attraction generated by the application of a DC voltage continuously changes. In the lower drive electrodes and the upper drive electrode, electrostatic capacitance generated by the application of an RF signal between the electrodes on both sides continuously changes in accordance with the deformation of the beam portion due to the electrostatic attraction. The beam portion includes an inner circumferential portion including the upper drive electrode, an outer circumferential portion including the upper drive electrode, and ladder portions sandwiched by the inner circumferential portion and the outer circumferential portion. The beam portion has a cross-sectional area that is reduced by the ladder portions.
    Type: Application
    Filed: June 28, 2012
    Publication date: July 4, 2013
    Applicant: MURATA MANUFACTURING CO., LTD.
    Inventor: Keiichi UMEDA
  • Patent number: 8467169
    Abstract: An embodiment of the present disclosure provides a method to reduce acoustic vibration in a multilayered capacitor stimulated by a radio frequency signal by placing a first capacitor layer adjacent to second capacitor layer sharing a common electrode such that the acoustic vibration is reduced by applying one or more anti-acoustic vibration bias voltages to the multilayered capacitor. Other embodiments are disclosed.
    Type: Grant
    Filed: August 8, 2007
    Date of Patent: June 18, 2013
    Assignee: Research In Motion RF, Inc.
    Inventors: James Oakes, James Martin, Andrey Kozyrev, Alexandr Prudan
  • Patent number: 8441773
    Abstract: Driving is made possible in a moving range equivalent to or wider than the conventional range, with a driving voltage having a range smaller than a pull-in voltage. An electronic element includes a fixed portion provided with a first driving electrode and a first signal electrode, and a movable portion provided with a second driving electrode and a second signal electrode, movable with respect to the fixed portion and provided to generate a spring force to make restoration to a predetermined position. An electrostatic force is generated between the first and second driving electrodes by a voltage applied therebetween so that the electrostatic force resists against the spring force; and the first and second driving electrodes and the first and second signal electrodes are arranged so that the electrostatic force is generated in a direction in which a spacing distance between the first and second signal electrodes is widened.
    Type: Grant
    Filed: March 27, 2009
    Date of Patent: May 14, 2013
    Assignee: Nikon Corporation
    Inventors: Hiroshi Konishi, Junji Suzuki
  • Publication number: 20130107416
    Abstract: Embodiments of a method include forming a metal-insulator-metal (MIM) capacitor including a first electrode and a second electrode and an insulator layer between the first and second electrodes, the MIM capacitor also including a reactive layer; and altering the reactive layer to change a capacitive value of the MIM capacitor.
    Type: Application
    Filed: December 17, 2012
    Publication date: May 2, 2013
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventor: INTERNATIONAL BUSINESS MACHINES CORPORATION
  • Patent number: 8429809
    Abstract: A method for manufacturing a mirror device is presented. The method includes forming a mirror from a first substrate and forming a hinge/support structure from a second substrate. The hinge/support structure is formed with a recessed region and a torsional hinge region. The mirror is attached to the hinge/support structure at the recessed region. Further, a driver system is employed to cause the mirror to pivot about the torsional hinge region.
    Type: Grant
    Filed: January 10, 2012
    Date of Patent: April 30, 2013
    Assignee: Texas Instruments Incorporated
    Inventor: John W. Orcutt
  • Publication number: 20130100065
    Abstract: This disclosure provides systems, methods and apparatus for electromechanical systems variable capacitance devices. In one aspect, an electromechanical systems variable capacitance device includes a substrate with a bottom bias electrode on the substrate. A first radio frequency electrode above the bottom bias electrode defines a first air gap. A non-planarized first dielectric layer is between the bottom bias electrode and the first radio frequency electrode. A metal layer above the first radio frequency electrode defines a second air gap. The metal layer includes a top bias electrode and a second radio frequency electrode.
    Type: Application
    Filed: October 21, 2011
    Publication date: April 25, 2013
    Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.
    Inventors: Daniel FELNHOFER, Wenyue ZHANG, Je-Hsuing LAN
  • Publication number: 20130063857
    Abstract: Disclosed herein is an MEMS variable capacitor and its driving method, the MEMS variable capacitor including, a first electrode, a second electrode floating over the first electrode upper part, a fixed electrode separated at the second electrode side surface, and a drifting electrode placed between the second electrode and the fixed electrode, connected to the second electrode, and physically contacting the fixed electrode by a voltage applied to the fixed electrode.
    Type: Application
    Filed: May 27, 2011
    Publication date: March 14, 2013
    Applicants: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, LG INNOTEK CO., LTD.
    Inventors: Chang Wook Kim, Dong Chan Park, Ju Young Song, Sang Hun Lee, Sung Bae Cho, Hyun Ho Yang, Jun Bo Yoon, Dong Hoon Choi, Chang Hoon Han
  • Patent number: 8385045
    Abstract: A variable capacitor and a control method thereof capable of responding to applications of electronic apparatuses including various electronic devices and communication mobile devices. The variable capacitor includes a pair of electrodes formed so as to sandwich a ferroelectric material layer, in which polarization processing higher than a coercive field in hysteresis characteristics of polarization has been performed to the ferroelectric material layer, and the capacitance can be varied in accordance with a control voltage applied to the electrodes.
    Type: Grant
    Filed: February 12, 2009
    Date of Patent: February 26, 2013
    Assignee: Sony Corporation
    Inventors: Kazutaka Habu, Masayoshi Kanno, Toshiaki Yokota, Makoto Watanabe
  • Patent number: 8379364
    Abstract: A construction system for a capacitive sensor comprises a source electrode (210), a screening element (220) with partition (221) which forms a first and a second screened chamber (220.a, 220.b), a field sensor (230), a circuit (250), a spacing member (260) with a through-duct, and a screw (270). The partition (221) is provided with a hole (224) and said spacing member (260) is positioned inside the first chamber (220.a) with the axis (260.y) of the duct arranged coaxial with the axis (224-y) of said hole (224). The same spacing member (260) is positioned between the proximal face (223) of the partition (221) and the distal face (232) of the field sensor (230) and said field sensor (230) is provided with a threaded hole (233). The head (271) of the screw (270) is arranged inside the second chamber (220.
    Type: Grant
    Filed: October 1, 2009
    Date of Patent: February 19, 2013
    Assignee: Green Seas Ventures, Ldt.
    Inventor: Lorenzo Peretto
  • Patent number: 8373522
    Abstract: Systems including varactor devices are provided. A varactor device (400) includes a gap closing actuator (GCA) varactor (200), includes a drive comb structure (201), an output varactor structure (514) defining an output capacitance, a reference varactor structure (214) defining a reference capacitance, and a movable truss comb structure (204) interdigitating the drive comb, the output varactor, and the reference varactor structures. The truss comb structure moves along a motion axis (205) between interdigitating positions based on a bias voltage. The device also includes a feedback circuit (404) configured for modifying an input bias voltage based on the reference capacitance to produce the output bias voltage that provides a target capacitance associated with the input bias voltage at the output varactor structure.
    Type: Grant
    Filed: February 3, 2010
    Date of Patent: February 12, 2013
    Assignee: Harris Corporation
    Inventor: John E. Rogers
  • Patent number: 8363380
    Abstract: MEMS varactors capable of handling large signals and/or achieving a high capacitance tuning range are described. In an exemplary design, a MEMS varactor includes (i) a first bottom plate electrically coupled to a first terminal receiving an input signal, (ii) a second bottom plate electrically coupled to a second terminal receiving a DC voltage, and (iii) a top plate formed over the first and second bottom plates and electrically coupled to a third terminal. The DC voltage causes the top plate to mechanically move and vary the capacitance observed by the input signal. In another exemplary design, a MEMS varactor includes first, second and third plates formed on over one another and electrically coupled to first, second and third terminals, respectively. First and second DC voltages may be applied to the first and third terminals, respectively. An input signal may be passed between the first and second terminals.
    Type: Grant
    Filed: May 28, 2009
    Date of Patent: January 29, 2013
    Assignee: Qualcomm Incorporated
    Inventors: Je-Hsiung Lan, Evgeni P. Gousev, Wenyue Zhang, Manish Kothari, Sang-June Park
  • Publication number: 20130003253
    Abstract: A varactor includes a first PTC region, which comprises a ceramic material with a positive temperature coefficient with respect to the resistance. The varactor also includes a capacitor region that includes a first electrode, a second electrode, and a first dielectric layer arranged between the first electrode and the second electrode. The first PTC region and the capacitor region are connected thermally conductively to one another. The capacitance of the capacitor region can be changed by applying a bias to the first PTC region, the capacitor region or to the first PTC region and the capacitor region.
    Type: Application
    Filed: December 21, 2010
    Publication date: January 3, 2013
    Applicant: EPCOS AG
    Inventor: Andrea Testino
  • Publication number: 20130003254
    Abstract: A crystalline perovskite crystalline composite paraelectric material includes nano-regions containing rich N3? anions dispersed in a nano-grain sized matrix of crystalline oxide perovskite material, wherein (ABO3-?)?-(ABO3-?-?N?)1-?. A represents a divalent element, B represents a tetravalent element, ? satisfies 0.005???1.0, 1-? satisfies 0.05?1-??0.9, and 1-? is an area ratio between the regions containing rich N3? anions and the matrix of remaining oxide perovskite material.
    Type: Application
    Filed: September 14, 2012
    Publication date: January 3, 2013
    Applicant: MURATA MANUFACTURING CO., LTD.
    Inventors: Ivoyl KOUTSAROFF, Shinichi HIGAI, Akira ANDO
  • Patent number: 8339764
    Abstract: A MEMS device comprises first and second opposing electrodes (42,46), wherein the second electrode (46) is electrically movable to vary the electrode spacing between facing first sides of the first and second electrodes. A first gas chamber (50) is provided between the electrodes, at a first pressure, and a second gas chamber (52) is provided on the second, opposite, side of the second electrode at a second pressure which is higher than the first pressure. This arrangement provides rapid switching and with damping of oscillations so that settling times are reduced.
    Type: Grant
    Filed: May 7, 2009
    Date of Patent: December 25, 2012
    Assignee: NXP B.V.
    Inventors: Peter G. Steeneken, Hilco Suy, Martijn Goossens
  • Publication number: 20120281336
    Abstract: A novel semiconductor variable capacitor is presented. The semiconductor structure is simple and is based on a semiconductor variable MOS capacitor structure suitable for integrated circuits, which has at least three terminals, one of which is used to modulate the equivalent capacitor area of the MOS structure by increasing or decreasing its DC voltage with respect to another terminal of the device, in order to change the capacitance over a wide ranges of values. Furthermore, the present invention decouples the AC signal and the DC control voltage avoiding distortion and increasing the performance of the device, such as its control characteristic. The present invention is simple and only slightly dependent on the variations due to the fabrication process. It exhibits a high value of capacitance density and, if opportunely implemented, shows a linear dependence of the capacitance value with respect to the voltage of its control terminal.
    Type: Application
    Filed: May 5, 2011
    Publication date: November 8, 2012
    Inventors: Fabio Alessio Marino, Paolo Menegoli
  • Publication number: 20120250130
    Abstract: A piezoelectric actuator of the presently disclosed subject matter can include: a first actuator including a first piezoelectric driving part; and a second actuator including a second piezoelectric driving part. A central portion of the first actuator can be supported. The first actuator can be bent and deformed by applying a first driving voltage to the first piezoelectric driving part, so that both end portions of the first actuator can be displaced in a thickness direction of the first actuator. Both end portions of the second actuator can be coupled to the both end portions of the first actuator. The second actuator can be bent and deformed in the opposite direction to the first actuator by applying a second driving voltage to the second piezoelectric driving part, so that a central portion of the second actuator can be displaced in a thickness direction of the second actuator.
    Type: Application
    Filed: March 29, 2012
    Publication date: October 4, 2012
    Inventor: Takayuki NAONO
  • Publication number: 20120206857
    Abstract: A variable capacitance device that operates properly at a point along a signal line through which a high-voltage RF signal passes while reducing a necessary DC voltage includes a substrate, a beam, and lower drive electrodes. The beam is connected to the substrate through a support portion. Lower drive electrodes and the beam generate a capacitance when a DC voltage is applied, and an electrostatic force due to this capacitance deforms the beam. The lower drive electrodes face the beam and are coupled to each other through the beam. An RF signal propagates between the lower drive electrodes.
    Type: Application
    Filed: April 23, 2012
    Publication date: August 16, 2012
    Applicant: MURATA MANUFACTURING CO., LTD.
    Inventors: Keiichi UMEDA, Teruhisa SHIBAHARA, Hiroshi YAMADA
  • Patent number: 8238074
    Abstract: The present invention provides a capacitive RF-MEMS device comprising a vertically integrated decoupling capacitor (14). The decoupling capacitor (14) therefore does not take extra area. Furthermore, the RF-MEMS according to the invention needs less interconnects, which also saves space and which reduces the series inductance/resistance in the RF path.
    Type: Grant
    Filed: April 21, 2006
    Date of Patent: August 7, 2012
    Assignee: EPCOS AG
    Inventor: Peter Gerard Steeneken