Abstract: A novel semiconductor variable capacitor is presented. The semiconductor structure is simple and is based on a semiconductor variable MOS capacitor structure suitable for integrated circuits, which has at least three terminals, one of which is used to modulate the equivalent capacitor area of the MOS structure by increasing or decreasing its DC voltage with respect to another terminal of the device, in order to change the capacitance over a wide ranges of values. Furthermore, the present invention decouples the AC signal and the DC control voltage avoiding distortion and increasing the performance of the device, such as its control characteristic. The present invention is simple and only slightly dependent on the variations due to the fabrication process. It exhibits a high value of capacitance density and, if opportunely implemented, shows a linear dependence of the capacitance value with respect to the voltage of its control terminal.

Abstract: A piezoelectric actuator of the presently disclosed subject matter can include: a first actuator including a first piezoelectric driving part; and a second actuator including a second piezoelectric driving part. A central portion of the first actuator can be supported. The first actuator can be bent and deformed by applying a first driving voltage to the first piezoelectric driving part, so that both end portions of the first actuator can be displaced in a thickness direction of the first actuator. Both end portions of the second actuator can be coupled to the both end portions of the first actuator. The second actuator can be bent and deformed in the opposite direction to the first actuator by applying a second driving voltage to the second piezoelectric driving part, so that a central portion of the second actuator can be displaced in a thickness direction of the second actuator.

Abstract: A variable capacitance device that operates properly at a point along a signal line through which a high-voltage RF signal passes while reducing a necessary DC voltage includes a substrate, a beam, and lower drive electrodes. The beam is connected to the substrate through a support portion. Lower drive electrodes and the beam generate a capacitance when a DC voltage is applied, and an electrostatic force due to this capacitance deforms the beam. The lower drive electrodes face the beam and are coupled to each other through the beam. An RF signal propagates between the lower drive electrodes.

Abstract: The present invention provides a capacitive RF-MEMS device comprising a vertically integrated decoupling capacitor (14). The decoupling capacitor (14) therefore does not take extra area. Furthermore, the RF-MEMS according to the invention needs less interconnects, which also saves space and which reduces the series inductance/resistance in the RF path.

Abstract: A variable capacitance element provided with a substrate, a signal line provided on the substrate, a fixed electrode provided on the substrate, and a movable electrode. The movable electrode includes a movable portion that spans the signal line and extends to above the fixed electrode, and is movable with respect to the fixed electrode, and a fixed portion that is fixed to the fixed electrode across a dielectric layer.

Abstract: A capacitive transducer of multi-layer construction includes at least one rotor plate supported by flexible springs, A number of improvements are disclosed including a hollow rotor plate structure for reduced moving mass, buckling resistant features for the springs, improved spring anchor joint design for reduced creep and hysteresis, and material selection and matching for reduced thermal sensitivity. one embodiment allows measurement of force and/or displacement in multiple directions.

Abstract: To provide a capacitative device capable of accurately securing a capacitance value, a variable capacitative device capable of sufficiently securing a capacity variability rate, and a resonance circuit that uses the capacitative devices. A capacitative device according to the present invention includes a capacitative device body constituted of a dielectric layer and at least a pair of capacitative device electrodes that sandwich the dielectric layer and cause a desired electric field in the dielectric layer; and stress adjustment portions to adjust a stress caused in the dielectric layer of the capacitative device body.

Abstract: Embodiments of a method include forming a metal-insulator-metal (MIM) capacitor including a first electrode and a second electrode and an insulator layer between the first and second electrodes, the MIM capacitor also including a reactive layer; and altering the reactive layer to change a capacitive value of the MIM capacitor.

Abstract: A laminate type semiconductor ceramic capacitor with a varistor function is achieved which allows for an improvement in product yield while ensuring such insulation performance that can withstand practical use, and is suitable for mass production with a favorable ESD withstanding voltage. The semiconductor ceramic forming the semiconductor ceramic layers has a compounding molar ratio m between the Sr site and the Ti site of 0.990?m<1.000, has a donor element such as La present as a solid solution in crystal grains, has an acceptor element such as Mn present in a grain boundary layer in the range of 0.5 mol or less (preferably 0.3 mol to 0.5 mol) with respect to 100 mol of the Ti element, and has the crystal grains with an average grain size of 1.5 ?m or less.

Abstract: A capacitive switch for microelectromechanical systems (MEMS) comprises a topmost metal plate which extends across a bridge structure formed by a polymer layer. The polymer layer comprises poly-monochoro-para-xylene (parylene-C). The space below the polymer layer contains the second plate on a substrate. Using parylene as the primary bridge material makes the bridge of the MEMS device very flexible and requires a relatively low actuation voltage to pull the bridge down and lower power is required to control the MEMS device.

Abstract: A semiconductor device applies a hold voltage Vhold to an upper electrode of an electrostatic actuator and a ground voltage to a lower electrode. After the semiconductor device sets the voltage of the lower electrode to a test voltage Vtest, it eliminates the hold voltage Vhold from the upper electrode and places the voltage of the upper electrode in a high impedance state. The potential difference between the upper electrode and the lower electrode is set to Vhold?Vtest=Vmon. Thereafter, the voltage of the lower electrode is returned to the ground voltage. Whether the electrostatic actuator is placed in an open state or in a closed state is determined by measuring the capacitance between the electrodes based on the amount of drop of the voltage of the upper electrode due to capacitance coupling at the time.

Abstract: A micro-electromechanical device has a substrate (60), a movable element (15), a pair of electrodes (40) arranged on the substrate and on the movable element to move the movable element, and a controller (50) to supply the electrodes. To move the movable element to an intermediate position one or more pulses are applied during the movement, timed to compensate for under or over damping of the movement. This can reduce a settling delay. It can be applied to tunable RF capacitors. To control a decrease in the gap, a single pulse of a maximum supply level compensates for the inherent slowness of the device and over damping. To compensate for under damping, the pulses have a period corresponding to a resonant frequency, and comprise peaks and troughs above and below the final supply level, such that successive ones of the peaks and troughs are closer to the given supply level.

Abstract: A MEMS device includes a substrate, a fixed electrode that is provided on the substrate and allows a signal to pass therethrough, a movable electrode that is provided above the substrate in a manner to face the fixed electrode and allows a signal to pass therethrough, a driving line that is provided inside the substrate and used to apply a driving voltage to displace the movable electrode, and a resistance that is provided in a first via hole formed inside the substrate and used to cutoff a signal. The fixed electrode or the movable electrode is connected to the driving line through the first resistance.

Abstract: There is provided a method for fabricating a device, preferably for a micro electro electro mechanical system. The method includes forming a first electrode on a substrate, where the first electrode has a first sloped end at least at one end thereof; forming a sacrificial layer on the first electrode, where the sacrificial layer has a first sloped edge, the first sloped edge and the first sloped end are overlapped each other so that a thickness of the first sloped edge decreases as a thickness of the first sloped end increases; forming a first spacer on the first electrode, where the first spacer has contact with the first sloped edge; forming a beam electrode on the sacrificial layer and the first spacer; and removing the sacrificial layer after the forming the beam electrode.

Abstract: A construction system for a capacitive sensor comprises a source electrode (210), a screening element (220) with partition (221) which forms a first and a second screened chamber (220.a, 220.b), a field sensor (230), a circuit (250), a spacing member (260) with a through-duct, and a screw (270). The partition (221) is provided with a hole (224) and said spacing member (260) is positioned inside the first chamber (220.a) with the axis (260.y) of the duct arranged coaxial with the axis (224-y) of said hole (224). The same spacing member (260) is positioned between the proximal face (223) of the partition (221) and the distal face (232) of the field sensor (230) and said field sensor (230) is provided with a threaded hole (233). The head (271) of the screw (270) is arranged inside the second chamber (220.

Abstract: The invention specifically concerns a device for varying the apparent level of a capacitance, said device being characterized in that it compromises: —a dipole (1) of a type known per se, comprising a semiconductor material (4) for electronic transfer via hopping situated between a first electrode (2) and a second electrode (6), with said dipole (1) situated parallel to said capacitance (12); —a continuous voltage generator (13) electrically connected to the second electrode (6) and the first electrode (2) of the dipole (1); —and a means for varying the voltage generated by the generator (13).

Abstract: Systems including varactor devices are provided. A varactor device (400) includes a gap closing actuator (GCA) varactor (200), includes a drive comb structure (201), an output varactor structure (514) defining an output capacitance, a reference varactor structure (214) defining a reference capacitance, and a movable truss comb structure (204) interdigitating the drive comb, the output varactor, and the reference varactor structures. The truss comb structure moves along a motion axis (205) between interdigitating positions based on a bias voltage. The device also includes a feedback circuit (404) configured for modifying an input bias voltage based on the reference capacitance to produce the output bias voltage that provides a target capacitance associated with the input bias voltage at the output varactor structure.

Abstract: A variable capacitor is provided which is appropriate for suppressing fluctuation in driving voltage characteristic and for achieving a larger variation ratio of static capacitance. The variable capacitor includes a fixed electrode and a movable electrode. The fixed electrode includes a first opposing face, while the movable electrode includes a second opposing face that faces the first opposing face. The movable electrode further includes a curved portion that protrudes toward the fixed electrode. The variable capacitor also includes a dielectric pattern provided on the first opposing face.

Abstract: An embodiment of a tunable capacitor can include a plurality of capacitors connected in series where at least two capacitors of the plurality of capacitors share a common electrode where the at least two capacitors are in lateral proximity and a bias that is capable of being applied to the at least two capacitors whereby the at least two capacitors vibrate in opposite phase to each other when the bias and an RF signal is applied to the at least two capacitors.

Abstract: To suppress changes in capacitance due to displacement between electrodes opposing each other across a dielectric layer, thereby allowing stable manufacturing of a capacitance device having a desired capacitance. The capacitance device according to the present invention is of a configuration including a dielectric layer (10), a first electrode (11) formed on a predetermined surface (10a) of the dielectric layer (10), and a second electrode (12) formed on a surface (10b) on the opposite side of the dielectric layer (10) from the predetermined surface (10a). The forms of the first and second electrodes (11, 12) are set so that even in the event that the first electrode (11) is relatively displaced regarding position in a predetermined direction as to the second electrode (12), the area of the opposing-electrode region between the first electrode (11) and to the second electrode (12) is unchanged.

Abstract: A two-terminal, variable capacitance device is described that is constructed by connecting multiple MEMS devices having different actuation or “pull in” voltages in parallel.

Abstract: Provided is a variable capacitance element comprising a plurality of single capacitance elements that each include (i) a fixed electrode provided on a surface of a substrate, (ii) a floating electrode provided to be separate from the fixed electrode and facing the fixed electrode, and (iii) an actuator that moves the floating electrode closer to or farther from the fixed electrode; and a floating electrode driving section that supplies the actuators with drive power to move the floating electrodes, such that a combined capacitance of the plurality of single capacitance elements becomes a prescribed capacitance.

Abstract: Coulomb islands are charged to create Coulomb forces which are applied between a first and second substrate. The Coulomb islands are used to levitate the first substrate over the second substrate into an equilibrium position. A processing unit monitors the values of capacitors formed between the substrates to provide feedback information to maintain the first substrate in this equilibrium position. The first substrate can be an accelerometer that can be used to calculate the direction and magnitude of a deceleration. The processing unit sends the digital information to a bus coupled to a plurality of air bags. The digital information identifies the appropriate air bags that need to be enabled to minimize the impact of a crash. Vertical changes in acceleration can also be detected making this invention applicable for flight vehicles.

Abstract: According to one embodiment, a MEMS devise includes an electrode on a substrate, a movable structure which is supported in midair above the electrode by first and second anchor portions on the substrate, and moves toward the electrode, a first spring structure which connects the first anchor portion to the movable structure and uses a ductile material, and a second spring structure which connects the second anchor portion to the movable structure and uses a brittle material.

Abstract: In a method for drive controlling a micro machine device including two electrodes opposing each other and a dielectric layer sandwiched therebetween, a control voltage in a rectangular waveform in which positive and negative polarities are alternately inverted is applied between the two electrodes. A current passing through the micro machine device due to the application of the control voltage are detected with respect to positive and negative sides, and parameters related to a capacitance of the micro machine device are acquired with respect to the positive and negative sides on the basis of the detected current. The control voltage is controlled so that the parameters acquired with respect to the positive and negative sides accord with each other. Thus, variation of the capacitance between the positive side and the negative side can be suppressed in switching drive of a variable capacitance device.

Abstract: One exemplary tunable capacitive device includes a first tunable capacitive element, a first coupling capacitive element, a first coupling resistive element, and a first specific capacitive element. The first tunable capacitive element has a first node coupled to a first input voltage, and a second node. The first coupling capacitive element has a first node coupled to the second node of the first tunable capacitive element, and a second node coupled to a first connection terminal of the tunable capacitive device. The first coupling resistive element has a first node coupled to the second node of the first tunable capacitive element, and a second node coupled to a second input voltage, where the first input voltage and the second input voltage include a control voltage and a reference voltage. The first specific capacitive element is coupled between the first node and the second node of the first tunable capacitive element.

Abstract: A MEMS device comprises first and second opposing electrodes (42,46), wherein the second electrode (46) is electrically movable to vary the electrode spacing between facing first sides of the first and second electrodes. A first gas chamber (50) is provided between the electrodes, at a first pressure, and a second gas chamber (52) is provided on the second, opposite, side of the second electrode at a second pressure which is higher than the first pressure. This arrangement provides rapid switching and with damping of oscillations so that settling times are reduced.

Abstract: A memcapacitive device includes a first electrode having a first end and a second end and a second electrode. The device has a memcapacitive matrix interposed between the first electrode and the second electrode. The memcapacitive matrix has a non-linear capacitance with respect to a voltage across the first electrode and the second electrode. The memcapacitive matrix is configured to alter a signal applied on the first end by at least one of a) changing at least one of a rise-time and a fall-time of the signal and b) delaying the transmission of the signal based on the application of a programming voltage across the first electrode and the second electrode.

Abstract: A MEMS device of an aspect of the present invention including a MEMS element includes a first lower electrode provided on a substrate, a first insulator which is provided on the upper surface of the first lower electrode, and has a first thickness, and a movable first upper electrode supported by an anchor in midair above the first lower electrode, and a capacitance element includes a second lower electrode provided on the substrate, a second insulator which is provided on the upper surface of the second lower electrode, and has a second thickness, and a second upper electrode provided on the second insulator, wherein the second thickness is less than the first thickness.

Abstract: The present invention provides a variable capacitor and a control method thereof capable of responding to applications of electronic apparatus including various electronic devices and communication mobile devices. The electronic device and the communication mobile device including the variable capacitor are provided. A variable capacitor according to the invention includes a pair of electrodes formed so as to sandwich a ferroelectric material layer, in which polarization processing higher than a coercive field in hysteresis characteristics of polarization has been performed to the ferroelectric material layer, and the capacitance can be varied in accordance with a control voltage applied to the electrodes.

Abstract: A capacitance switching element includes first and second capacitors connected in series by transistors. The gates of the transistors are biased by a first signal through one set of resistors, and the sources and drains are biased by a second signal through a second set of resistors. The signals are level-shifted and may be complimentary. To turn the element ON, the first signal may be set to VDD and the second signal may be set to zero. To turn the element OFF, the first signal may be set to a multiple of VDD/2 and the second signal may be set to the multiple plus one of VDD/2. When the element is used in an oscillator tuning circuit, the voltage stress on the transistors is reduced and the transistors may be fabricated with thin oxide. The oscillator may be used in a transceiver of a cellular access terminal.

Abstract: A laminated variable capacitor including: input-output terminals for inputting an alternating-current signal and outputting an output signal; and controlling terminals for controlling a capacitance value for voltage of the input alternating-current signal; wherein a total area of external electrodes for input and output connected to said input-output terminals is larger than a total area of external electrodes for control connected to said controlling terminals, or the external electrodes for input and output connected to said input-output terminals are different in structure from the external electrodes for control connected to said controlling terminals.

Abstract: A capacitor manufacturing method provides variable capacitors whose capacitances remain stable under the influence of temperature change. Such a variable capacitor includes a fixed electrode, a movable electrode film facing the fixed electrode, and an anchor portion that provides partial connection between the fixed electrode and the movable electrode film. For making this variable capacitor, a first electrode is formed to serve as the fixed electrode. Then, an anchor portion is formed on the fixed electrode, and a sacrifice film is formed to cover the fixed electrode but partially expose the anchor portion. A second electrode is formed on the sacrifice film to serve as the movable electrode film, bonded to the anchor portion. Finally, the sacrifice film is removed.

Abstract: A method is for fabricating an integrated circuit formed from a substrate and including several metallic interconnection levels in which, in a same plane parallel to the main plane of the substrate, is a plurality of thick horizontal metallic interconnection lines, as well as one or several MIM capacitors fitted with metallic electrodes that are orthogonal to the main plane of the substrate.

Abstract: The present invention relates to a ferroelectric varactor (400) that comprises a dielectric-layer stack (408) between electrodes (406, 410). The dielectric-layer stack comprises an alternating layer sequence of at least three dielectric layers. At cc least two first dielectric layers of the dielectric-layer stack are made of a non-single-crystalline first dielectric material having a first dielectric constant, at least one second dielectric layer of the dielectric-layer stack is made of a non-single-crystalline second dielectric material with a second dielectric constant that differs from the first dielectric constant. One of the first and second dielectric materials exhibits a weaker ferroelectric hysteresis. The dielectric material with the weaker ferroelectric hysteresis makes up more than 20% of the total volume of the dielectric-layer stack.

Abstract: A MEMS tunable capacitor comprises first and second opposing capacitor electrodes (10,12), wherein the second capacitor electrode (12) is movable by a MEMS switch to vary the capacitor dielectric spacing, and thereby tune the capacitance. A tunable dielectric material (14) and a non-tunable dielectric material are in series between the first and second electrodes. The tunable dielectric material occupies a dimension gd of the electrode spacing, and the non-tunable dielectric material occupies a dimension g of the electrode spacing. A third electrode (20) faces the movable second electrode (12) for electrically controlling tunable dielectric material.

Abstract: A circuit is proposed by means of which a ceramic component having two electrodes can be provided with a uniform, but periodically alternating BIAS voltage. The component has properties dependent on the level of the BIAS voltage and, for the purpose of an increased service life, is connected to a generator for generating a BIAS voltage and to means for periodically reversing the polarity of the BIAS voltage present at the electrodes. In a method for operating the component having variable properties, a uniform BIAS voltage, the polarity of which is periodically reversed, however, is applied to the electrodes, and the service life of the component is thus increased.

Abstract: A voltage-controlled capacitor and methods for forming the same are described. A mechanical conductor membrane of the voltage-controlled capacitor is movable to and from a first position and a second position. An amount of capacitance can vary with the movement of the mechanical conductor membrane. A microelectromechanical systems (MEMS) voltage-controlled capacitor can be used in a variety of applications, such as, but not limited to, RF switches and RF attenuators.

Abstract: A capacitor manufacturing method provides variable capacitors whose capacitances remain stable under the influence of temperature change. Such a variable capacitor includes a fixed electrode, a movable electrode film facing the fixed electrode, and an anchor portion that provides partial connection between the fixed electrode and the movable electrode film. For making this variable capacitor, a first electrode is formed to serve as the fixed electrode. Then, an anchor portion is formed on the fixed electrode, and a sacrifice film is formed to cover the fixed electrode but partially expose the anchor portion. A second electrode is formed on the sacrifice film to serve as the movable electrode film, bonded to the anchor portion. Finally, the sacrifice film is removed.

Abstract: A fabrication method for parallel-plate structures and a parallel-plate structure arrangement, wherein the structures have a middle layer, grown on a substrate and disposed between top and bottom electrode layers, wherein the middle layer and the top and bottom electrode layers are deposited on a bottom substrate, and wherein the middle layer is grown first and the top and bottom electrodes are essentially deposited afterwards.

Abstract: A tunable capacitor using an electrowetting phenomenon includes a first electrode; a second electrode which is spaced apart from the first electrode and faces the first electrode; a fluidic channel which is disposed between the first electrode and the second electrode; a first insulating layer which is disposed between the first electrode and the fluidic channel; and a conductive fluid which is disposed in the fluidic channel and moves along the fluidic channel when a direct current (DC) potential difference occurs between the first and second electrodes. Accordingly, it is possible to fabricate the tunable capacitor with the simplified fabrication process, good reliability and durability, and no restriction on the tuning range.

Abstract: A method of forming an actuator and a relay using a micro-electromechanical (MEMS)-based process is disclosed. The method first forms the lower sections of a square copper coil, and then forms an actuation member that includes a core section and a horizontally adjacent floating cantilever section. The core section, which lies directly over the lower coil sections, is electrically isolated from the lower coil sections. The method next forms the side and upper sections of the coil, along with first and second electrodes that are separated by a switch gap. The first electrode lies directly over an end of the core section, while the second electrode lies directly over an end of the floating cantilever section.

Abstract: A process of manufacturing parallel-plate microstructures by integrating the microstructures in a chip using a CMOS process is provided. A MEMS variable capacitor, a tunable band-pass filter, tunable matching networks, and capacitive RF-MEME switches all having vertically movable components and are integrated into a chip.

Abstract: Micro-electro-mechanical system (MEMS) variable capacitors and actuation components and related methods are provided. A MEMS variable capacitor can include first and second feed lines extending substantially parallel to one another. Further, MEMS variable capacitors can include first and second capacitive plates being spaced apart from the first and second feed lines. The first and second capacitive plates can be separately movable with respect to at least one of the first and second feed lines for varying the capacitance between the first and second feed lines over a predetermined capacitance range.

Abstract: A tuneable capacitor arrangement for RF use has two series coupled MEMS variable capacitors (C1,C2;C4,C5,C6,C7), varied according to a control signal. The series coupling enables the capacitor to withstand a higher voltage since this is shared by the individual capacitors in a series coupled arrangement. An increase in size of electrodes for each capacitor is compensated by a reduction in size of the springs supporting movable electrodes. These springs can have a larger stiffness value since the capacitance is larger. This means shorter springs, which can also result in a reduction in problems of stiction, resistance, and slow switching. The capacitances have a fixed and a movable electrode, with the RF signal coupled to the fixed electrode to avoid the springs needing to carry an RF signal. This can reduce the problems of inductance and resistance in the springs.

Abstract: There is proved a variable capacitor that includes a substrate, a signal line disposed on a surface of the substrate for feeding a signal, a ground electrode disposed on the surface, and a movable electrode opposed the signal line and the ground electrode, the movable electrode operable to move toward and away from the signal line and the ground electrode. The movable electrode can be displaced by an electrostatic attraction between the movable electrode and the signal line and between the movable electrode and the signal line. An amount of displacement of the movable electrode varies according to an amount of the voltage which generates the electrostatic attraction.

Abstract: Aspects of a method and system for varactor linearization are provided. In this regard, a relationship between control voltage and capacitance of a variable capacitor may be controlled utilizing a plurality of bias voltages communicatively coupled to a corresponding plurality of bias terminals of said variable capacitor. The variable capacitor may comprise a plurality of two-terminal unit varactors and a first terminal of each unit varactor may be coupled to an RF terminal of the variable capacitor, a second terminal of one of the unit varactors may be coupled to the control voltage, and a second terminal of each of the remaining unit varactors may be coupled to one of the bias voltages. The bias voltages may be generated via a resistor ladder and/or via the resistive nature of a portion of semiconductor substrate. The bias voltages may linearize the relationship between the control voltage and the capacitance.

Abstract: A first insulated planar metallic surface is formed under a surface of a substrate which is orientated a first way to an edge of the substrate. A Faraday shield is formed when a second insulated planar metallic surface is juxtaposed to and segregates the first insulated planar metallic surface from the remained of the substrate. The first way can be parallel or perpendicular forming either an edge or surface Coulomb island, respectively. Both planar surfaces can be charged either by mechanical contact or induced charging, Fowler-Nordheim and ion implantation. A Coulomb force is generated between two charged Coulomb islands each located on a different substrate. In addition, these Coulomb islands can also be used as capacitors to transfer signals between the substrates. The Faraday shield can be used to increase the Coulomb force while the potential applied to the shield can alter the Coulomb force.

Abstract: Micro-electro-mechanical system (MEMS) variable capacitors and actuation components and related methods are provided. A MEMS variable capacitor can include first and second feed lines extending substantially parallel to one another. Further, MEMS variable capacitors can include first and second capacitive plates being spaced apart from the first and second feed lines. The first and second capacitive plates can be separately movable with respect to at least one of the first and second feed lines for varying the capacitance between the first and second feed lines over a predetermined capacitance range.

Abstract: The devices presented herein are capacitive sensors with single crystal silicon on all key stress points. Isolating trenches are formed by trench and refill forming dielectrically isolated conductive silicon electrodes for drive, sense and guards. For pressure sensing devices according to the invention, the pressure port is opposed to the electrical wire bond pads for ease of packaging. Dual-axis accelerometers measuring in plane acceleration and out of plane acceleration are also described. A third axis in plane is easy to achieve by duplicating and rotating the accelerometer 90 degrees about its out of plane axis Creating resonant structures, angular rate sensors, bolometers, and many other structures are possible with this process technology. Key advantages are hermeticity, vertical vias, vertical and horizontal gap capability, single crystal materials, wafer level packaging, small size, high performance and low cost.