Abstract: A capacitor (10) with a variable capacitance, includes at least one electrode (11) and at least one counter-electrode (12) situated opposite the electrode at a variable distance (13) therefrom. The capacitor is characterized in that a dielectric shaped part (15) with a dielectric molding compound for evening out a surface roughness (113) of the electrode surface is arranged inside the space between the electrode and the counter-electrode on one of the electrode surfaces (111) of at least one of the electrodes. The method for producing the capacitor includes the following steps: a) providing the electrode of the capacitor; b) applying a dielectric molding compound to the surface of the electrode so that the electrode surface is shaped by the molding compound, and; c) transforming the dielectric molding compound into the shaped part thereby evening out the surface roughness of the electrode surface.

Abstract: A capacitive switch for microelectromechanical systems (MEMS) comprises a topmost metal plate which extends across a bridge structure formed by a polymer layer. The polymer layer comprises poly-monochoro-para-xylene (parylene-C). The space below the polymer layer contains the second plate on a substrate. Using parylene as the primary bridge material makes the bridge of the MEMS device very flexible and requires a relatively low actuation voltage to pull the bridge down and lower power is required to control the MEMS device.

Abstract: An embodiment of the present invention is an apparatus, comprising a stack of at least three ferroelectric layers with a top side and bottom side of each of the ferroelectric layers contacting an electrode layer, wherein the ferroelectric layers and the electrode layers form a substantially periodic structure in the direction normal to said ferroelectric and electrode layers and wherein an acoustic characteristic impedance and thickness of each layer are selected to realize an acoustic bandgap over a desired frequency band for the purpose of improving device Q.

Abstract: A variable capacitor device is disclosed in which the capacitive tuning ratio and quality factor are increased to very high levels, and in which the capacitance value of the device is tuned and held to a desired value with a high level of accuracy and precision using a laser micromachining tuning process on suitably designed and fabricated capacitor devices. The tuning of the variable capacitor devices can be performed open-loop or closed-loop, depending on the precision of the eventual capacitor value needed or desired. Furthermore, the tuning to a pre-determined value can be performed before the variable capacitor device is connected to a circuit, or alternatively, the tuning to a desired value can be performed after the variable capacitor device has been connected into a circuit.

Abstract: A method of forming an actuator and a relay using a micro-electromechanical (MEMS)-based process is disclosed. The method first forms the lower sections of a square copper coil, and then forms a magnetic core member. The magnetic core member, which lies directly over the lower coil sections, is electrically isolated from the lower coil sections. The method next forms the side and upper sections of the coil, followed by the formation of an overlying cantilevered magnetic flexible member. Switch electrodes, which are separated by a switch gap, can be formed on the magnetic core member and the magnetic flexible member, and closed and opened in response to the electromagnetic field that arises in response to a current in the coil.

Abstract: A micro-electromechanical device has a substrate (60), a movable element (15), a pair of electrodes (40) arranged on the substrate and on the movable element to move the movable element, and a controller (50) to supply the electrodes. To move the movable element to an intermediate position one or more pulses are applied during the movement, timed to compensate for under or over damping of the movement. This can reduce a settling delay. It can be applied to tunable RF capacitors. To control a decrease in the gap, a single pulse of a maximum supply level compensates for the inherent slowness of the device and over damping. To compensate for under damping, the pulses have a period corresponding to a resonant frequency, and comprise peaks and troughs above and below the final supply level, such that successive ones of the peaks and troughs are closer to the given supply level.

Abstract: A capacitor with a multilayer structure on a ceramic or crystalline substrate is proposed that comprises at least one lower and one upper electrode as well as a tunable dielectric arranged therebetween in which resonant oscillation modes of bulk acoustic waves can be propagated, wherein, by suitable selection regarding material and thickness and a suitable number of layers in the multilayer structure, the latter is tuned such that the resonant frequencies of the oscillation modes lie outside of band ranges used in mobile telephones. Circuits with tunable capacitors that find multiple uses inside terminal devices for mobile communication are additionally proposed.

Abstract: Tuning devices and methods are disclosed. One of the devices comprises a metal structure connected with artificial dielectric elements, and variable capacitance devices. Each variable capacitance device is connected with a respective artificial dielectric element and with a control signal. Control of the variation of the capacitance allows the desired tuning. Another device comprises metallic structures connected with artificial dielectric elements and switches connected between the artificial dielectric elements. Turning ON and OFF the switches allows the capacitance between artificial dielectric elements to be varied and a signal guided by the metallic structures to be tuned.

Abstract: A method of driving a parallel-plate variable micro-electromechanical capacitor includes establishing a first charge differential across first and second conductive plates of a variable capacitor in which the first and second conductive plates are separated by a variable gap distance, isolating the first and second plates for a first duration, decreasing the charge differential to a second charge differential which is less than the first charge differential and in which the second charge differential corresponds to a second value of the variable gap distance.

Abstract: A process for fabricating a MEMS device comprises the steps of depositing and patterning on one side of a wafer a layer of material having a preselected electrical resistivity; bonding a substrate to the one side of the wafer using an adhesive bonding agent, the substrate overlying the patterned layer of material; selectively removing portions of the wafer from the side opposite the one side to define stationary and movable MEMS elements; and selectively removing the adhesive bonding agent to release the movable MEMS element, at least a portion of the layer of material being disposed so as to be attached to the movable MEMS element.

Abstract: A capacitive transducer of multi-layer construction includes two rotor plates supported by flexible springs, the plates being spaced apart and rigidly connected by a stem. One rotor plate my be used as either a pickup electrode or a grounded target electrode for determining position, displacement, or load force. The second rotor plate may be used for electrostatic actuation without interfering with or destroying circuitry associated with the first rotor plate. A number of improvements are disclosed including a hollow rotor plate structure for reduced moving mass, buckling resistant features for the springs, improved spring anchor joint design for reduced creep and hysteresis, and material selection and matching for reduced thermal sensitivity.

Abstract: The present invention relates to an electrically controllable/tunable microwave device comprising a ferroelectric substrate with a variable dielectric permitivity and conducting electrodes, arranged on said substrate, and the capacitance of which depends on applied voltage C/V), the microwave device comprises at least two sections or parts of the substrate/electrodes for each of which different electrical field strengths are generated upon voltage application. Said generated electrical field strengths are controlled by means of the design of the device and/or the voltage application such that the slope (dC(dV) of the voltage dependence of the capacitance (C(V) of the microwave device can be controlled.

Abstract: A variable capacitance capacitor has a plurality of variable capacitance elements, using a thin-film dielectric layer whose dielectric constant varies with voltage application, connected in series with one another between the high-frequency signal input and output terminals. The first bias lines belonging to a high-potential side and the second bias lines belonging to a low-potential side, in terms of voltage application, are connected, alternately, to electrodes of the variable capacitance elements connected one another and electrodes in the array of the series-connected variable capacitance elements connected respectively to the input terminal and the output terminal.

Abstract: A capacitive humidity sensor includes a detection portion and a reference portion. The detection portion includes detection electrodes and a moisture sensitive film. The reference portion includes reference electrodes and a moisture permeation film as a capacitance adjusting film. The capacitive humidity sensor detects humidity by converting a capacitance difference between a capacitance of the detection electrodes and a capacitance of the reference electrodes to an electric signal by using a capacitance-voltage conversion circuit. The moisture permeation film reduces offset voltage of the capacitive humidity sensor. Thus, an offset compensation circuit or the like is not required.

Abstract: A MEMS micro-capacitor having a variable capacity is disclosed. The MEMS micro-capacitor has at least one fixed electrode (3) positioned on one surface of a substrate (1); bending means with respect to the surface of the substrate including at least one moveable electrode (5) located opposite the fixed electrode (3); a layer of solid dielectric material interposed between the fixed electrode and the moveable electrode; and means (5, 6 and 7) for applying a bending force to the bending means. The bending force is intended to move the moveable electrode (5) with respect to the fixed electrode (3) in order to obtain, between these electrodes, a capacity that varies according to the applied bending force. The bending means are designed to clamp the layer of dielectric material between the moveable electrode and the fixed electrode so as to obtain a variable surface of the clamped layer of dielectric material.

Abstract: Tunable capacitors (10, 20, 30, 40) have a dielectric material (16, 26, 36, 42) between electrodes, which dielectric material comprises an insulating material (17, 27, 37, 42) and electrically conductive material, (18, 28, 38, 48) e.g., conductive nanoparticulates, dispersed therein. In certain cases, enhanced tune-ability is achieved when the dielectric material comprises elongated nanoparticulates (38). Further enhanced tune-ability may be achieved by aligning elongated particulates in an electrode-to-electrode direction. Nanoparticulates may be produced by heating passivated nanoparticulates. Passivated nanoparticulates may be covalently bound within a polymeric matrix. High bias potential device structures can be formed with preferential mobilities.

Abstract: Electrically tunable electromagnetic bandgap (“TEBG”) structures using a ferroelectric thin film on a semiconductor substrate, tunable devices that include such a TEBG structure, such as a monolithic microwave integrated circuit (“MMIC”), and a method producing such a TEBG structure are disclosed. The present invention provides a semiconductive substrate having an oxide layer, a first conductive layer positioned on the oxide layer, a ferroelectric layer covering the first conductive layer, and a second conductive layer positioned on a surface of the tunable ferroelectric layer. The use of the ferroelectric layer, which have a DC electric field dependent permittivity, enables a small size, tunable EBG structure.

Abstract: A variable capacitance element includes a coplanar line or signal conduction and a movable body, which are vertically displaced through a supporting bar and which are provided on a substrate. A movable electrode is provided between a first driving electrode and second and third driving electrodes which are movable electrodes. Voltage is applied between the movable electrodes, such that one of the movable electrodes is pressed against the coplanar line through a dielectric film. Thus, high frequency signals conducting through the coplanar line are shut off. When voltage is applied between the other electrodes, the movable electrode and the dielectric film are moved apart from the coplanar line. Thus, high frequency signals are conducted through the coplanar line.

Abstract: A variable capacitor. The variable capacitor has a movable capacitor electrode including a major surface and a fixed capacitor electrode including a major surface. The major surface of the fixed capacitor electrode is opposite the major surface of the movable capacitor electrode and is separated therefrom by a gap. The major surface of the movable capacitor electrode includes a rigidity-increasing feature. The rigidity-increasing feature further provides a capacitance-increasing topography and reduces snap-together of the capacitor electrodes.

Abstract: A variable capacitor includes a stator and a rotor rotatably supported by a cover relative to the stator. The stator includes a first stator electrode of two or more layers and a second stator electrode of two or more layers in the interior of a dielectric substrate. The first stator electrode is connected to a first external electrode and the second stator electrode is connected to a second external electrode. The rotor includes a rotor electrode of two pieces opposing the stator electrodes, and capacitances are defined in the areas of overlap of the rotor electrode and stator electrodes. The capacitances are adjustable to extremely small levels.

Abstract: A variable capacitor is provided such that it is possible to make nonlinear distortion small and use at high power handling capability, and such that a variable rate of capacitance is not influenced by a high-frequency voltage substantially. A variable capacitor is used by changing capacitance through application across electrodes of direct current voltage and high-frequency voltage. When an effective voltage value of high-frequency voltage is within a range of voltage values of direct current voltage, there is substantially no fluctuation caused by application of high-frequency voltage with respect to a change of capacitance caused by application of direct current. Since it is possible to decrease susceptibility to the high-frequency voltage of the variable capacitor, it is possible to obtain a variable capacitor such that nonlinear distortion is small and power handling capability is high.

Abstract: A charge-dissipation structure is formed within the dielectric of an electrostatically driven device, such as a micro-electro-mechanical systems (“MEMS”) device, by ion implantation. Electrical and other properties of the charge-dissipation structure may be controlled by selection of the species, energy, and dose of implanted ions. With appropriate properties, such a charge-dissipation structure can reduce the effect on device operation of mobile charges in or on the dielectric.

Abstract: A tunable element in the microwave frequency range is described that may include one or more tunable elements that are directly digitally controlled by a digital bus connecting a digital control circuit to each controlled element. In particular, each digital signal is filtered by a digital isolation technique so that the signal reaches the tunable elements with very low noise. The low noise digital signals are then converted to analog control voltages. The direct D/A conversion is accomplished by a special D/A converter which is manufactured as an integral part of a substrate. This D/A converter in accordance with the invention may consist of a resistor ladder or a directly digitally controlled capacitor. The direct digitally controlled capacitor may be a cantilevered type capacitor having multiple separate electrodes or sub-plates representing binary bits that may be used to control the capacitor.

Abstract: An exemplary embodiment of the present invention described and shown in the specification and drawings is a transceiver with a receiver, a transmitter, a local oscillator (LO) generator, a controller, and a self-testing unit. All of these components can be packaged for integration into a single IC including components such as filters and inductors. The controller for adaptive programming and calibration of the receiver, transmitter and LO generator. The self-testing unit generates is used to determine the gain, frequency characteristics, selectivity, noise floor, and distortion behavior of the receiver, transmitter and LO generator. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or the meaning of the claims.

Abstract: A variable capacitor device using MEMS or micromachining techniques wherein thin-films of materials are deposited, patterned and etched to form movable micromechanical elements on the surface of a substrate composed of either semiconductor, glass, metal, or ceramic material. In one embodiment of the present invention to achieve higher frequency performance as well as other benefits, the substrate is comprised of Low-Temperature Co-Fired Ceramics (LTCC). The variable capacitor is an electrostatically actuated micromechanical device and if fabricated on a LTCC multi-layered substrate material has continuous electrical connections through the layers. The same LTCC substrate material can also be used to enclose the device by selectively removing a portion of the upper substrate so as to form a cavity. The two substrates are then bonded together to enclose and protect the variable capacitor.

Abstract: A charge control circuit for controlling a micro-electromechanical device having a variable capacitance is disclosed. In one embodiment, a charge storage device is configured to store a charge amount. A switch circuit is configured to control the variable capacitance of the micro-electromechanical device by sharing the charge amount between the charge storage device and the micro-electromechanical device to equalize the charge storage device and the micro-electromechanical device to a same voltage.

Abstract: A variable capacitance element includes a coplanar line or signal conduction and a movable body, which are vertically displaced through a supporting bar and which are provided on a substrate. A movable electrode is provided between a first driving electrode and second and third driving electrodes which are movable electrodes. Voltage is applied between the movable electrodes, such that one of the movable electrodes is pressed against the coplanar line through a dielectric film. Thus, high frequency signals conducting through the coplanar line are shut off. When voltage is applied between the other electrodes, the movable electrode and the dielectric film are moved apart from the coplanar line. Thus, high frequency signals are conducted through the coplanar line.

Abstract: First and second varactors are disposed on a surface of a P-type substrate. The first varactor includes an N well disposed in the surface of the P-type substrate, a gate insulator disposed on the N well, and an N-type polysilicon layer disposed on the gate insulator. The second varactor includes an N well disposed in the surface of the P-type substrate, a gate insulator disposed on the N well, and a P-type polysilicon layer disposed on the gate insulator. The N-type polysilicon layer and P-type polysilicon layer are connected to a gate terminal. The N wells are connected to an SD terminal via P+ diffusion layers. The N-type polysilicon layer and P-type polysilicon layer have different work functions.

Abstract: An exemplary embodiment of the present invention described and shown in the specification and drawings is a transceiver with a receiver, a transmitter, a local oscillator (LO) generator, a controller, and a self-testing unit. All of these components can be packaged for integration into a single IC including components such as filters and inductors. The controller for adaptive programming and calibration of the receiver, transmitter and LO generator. The self-testing unit generates is used to determine the gain, frequency characteristics, selectivity, noise floor, and distortion behavior of the receiver, transmitter and LO generator. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or the meaning of the claims.

Abstract: A capacitor includes first and second electrodes and a quasi 1D dielectric material disposed between the electrodes. The dielectric material has a charge or spin density wave state.

Abstract: A semiconductor torsional micro-electromechanical (MEM) switch is described having a conductive movable control electrode; an insulated semiconductor torsion beam attached to the movable control electrode, the insulated torsion beam and the movable control electrode being parallel to each other; and a movable contact attached to the insulated torsion beam, wherein the combination of the insulated torsion beam and the control electrode is perpendicular to the movable contact. The torsional MEM switch is characterized by having its control electrodes substantially perpendicular to the switching electrodes. The MEM switch may also include multiple controls to activate the device to form a single-pole, single-throw switch or a multiple-pole, multiple-throw switch. The method of fabricating the torsional MEM switch is fully compatible with the CMOS manufacturing process.

Abstract: A sensor, in particular a humidity sensor, comprises a measuring layer (4), the dielectric properties of which depend on a parameter to be measured, e.g. of the humidity of the environmental air. Electrodes (2, 3) are arranged on a substrate (1) side by side for capacitively measuring the measuring layer (1). A protective layer (8) of a non-oxidizing material, in particular a layer of silicon oxide or gold, is arranged between the electrodes (2, 3) and the measuring layer (4). This layer prevents an oxidation of the electrodes (2, 3) and increases the live time and reliability of the sensor.

Abstract: A microelectro-mechanical device which includes a fixed electrode formed on a substrate, the fixed electrode including a transparent, high resistance layer, and a moveable electrode formed with an anisotropic stress in a predetermined direction and disposed adjacent the fixed electrode. The device includes first and second electrically conductive regions which are isolated from one another by the fixed electrode. The moveable electrode moves to cover the fixed electrode and to electrically couple to the second conductive region, thus electrically coupling the first and second conductive regions, in response to a potential being applied across the fixed and moveable electrodes. The fixed electrode is transparent to electromagnetic signals or waves and the moveable electrode impedes or allows transmission of electromagnetic signals or waves.

Abstract: An electrostatic actuator with an intrinsic stress gradient is provided. The electrostatic actuator comprises an electrode and an electrostatically actuated beam fixed at one end relative to the electrode. The electrostatically actuated beam further includes a metal layer made substantially of a single metal with an induced stress gradient therein. The stress gradient in the metal layer determines the initial curvature of the beam. Upon electrostatic actuation of the beam, the beam is deflected from its initial curvature relative to the electrode. In one embodiment, the electrostatically actuated beam is used as a top movable electrode of an electrostatically actuated variable capacitor. The capacitance of the electrostatically actuated capacitor is changed upon electrostatic actuation of the beam.

Abstract: A method of fabricating and the structure of a micro-electromechanical switch (MEMS) device provided with self-aligned spacers or bumps is described. The spacers are designed to have an optimum size and to be positioned such that they act as a detent mechanism for the switch to minimize problems caused by stiction. The spacers are fabricated using standard semiconductor techniques typically used for the manufacture of CMOS devices. The present method of fabricating these spacers requires no added depositions, no extra lithography steps, and no additional etching.

Abstract: A capacitor having a bottom plate, a top plate and a support connected to the center portion of the top plate for positioning the top plate over the bottom plate and separated therefrom by a gap. The outer portion of the top plate moves relative to the bottom plate when a potential is applied between the plates. The outer portion may be connected to the center portion of the top plate by springs such that the movement of the top plate relative to the bottom plate is accommodated by bending at least one of the springs. The capacitor may also include an insulating layer between the top and bottom plates disposed so as to prevent the top plate from shorting to the bottom plate. A spacer for setting the minimum distance between the outer portion of the top plate and the bottom plate may also be included.

Abstract: Reservoir volume in a drug delivery device is sensed by providing a capacitor, the capacitance of which varies with bellows position or, alternatively, with the amount of propellant liquid absorbed in a dielectric material. In one embodiment, a capacitance is provided between a surface of the bellows, which acts as a first capacitor plate, and a conductive surface disposed proximate the bellows, which acts as a second capacitor plate. As the bellows moves from its extended full position to its collapsed empty position, the area of overlap, and therefore the capacitance between the first and second plates varies from a maximum value to a minimum value. In another embodiment, a variable capacitor is provided with an absorbent material. The absorbent material absorbs the liquid phase of the propellant in the pump housing and acts as a dielectric between two stationary conductive plates provided in the housing. The amount of liquid propellant absorbed in the absorbent material varies with the reservoir volume.

Abstract: A capacitive device includes a substrate (110), a first electrode (130, 140, 1220) located over the substrate and a second electrode (170, 1070, 1071, 1250) located over the first electrode, movable relative to the first electrode, and capacitively coupled to the first electrode. The device further includes a first control electrode (120, 150, 1210) located over the substrate and a second control electrode (160, 180, 1060, 1061, 1080, 1081, 1240) located over the first control electrode, movable relative to the first control electrode, and capacitively coupled to the first control electrode. The first and second control electrodes actuate the second electrode toward the first electrode.

Abstract: A micro electro-mechanical systems device having variable capacitance is controllable over the full dynamic range and not subject to the “snap effect” common in the prior art. The device features an electrostatic driver (120) having a driver capacitor of fixed capacitance (121) in series with a second driver capacitor of variable capacitance (126). A MEMS variable capacitor (130) is controlled by applying an actuation voltage potential to the electrostatic driver (120). The electrostatic driver (120) and MEMS variable capacitor (130) are integrated in a single, monolithic device.

Abstract: An electronic device (1), e.g. a mobile telephone having a front cover (6) and a capacitive proximity sensor, comprising: a first electrode (9; 27) and a second electrode (8; 21, 20), said first electrode having a large face (11, 12, 13; 29); and detector means connected to the first electrode (9, 27) and the second electrode (8, 21, 20) for detecting the capacitance of the first electrode relatively to the second electrode and for providing a control signal (Vprox) responsive to the capacitance. The large face (11, 12, 13; 29) of the first electrode is inclined relative to the front cover (6).

Abstract: An electrically tunable device, particularly for microwaves, includes a carrier substrate, conductors, and at least one tunable ferroelectric layer. Between the conductors and the tunable ferroelectric layer, a buffer layer including a thin film structure having a non-ferroelectric material is arranged.

Abstract: A voltage tunable dielectric varactor includes a substrate having a first dielectric constant and having generally a planar surface, first and second electrodes positioned on the generally planar surface of the substrate, the first and second electrodes being separated to form a first gap therebetween; a tunable dielectric layer positioned on the first and second electrodes and in the first gap, the tunable dielectric layer having a second dielectric constant greater than the first dielectric constant; and third and fourth electrodes positioned on a surface of the tunable dielectric layer opposite the first and second electrodes, the third and fourth electrodes being separated to form a second gap therebetween.

Abstract: A MEMS (Micro Electro Mechanical System) electrostatically operated high voltage variable controlled capacitor device is provided. This device can store high energy over a wide range while using relatively low electrostatic operating voltages. The MEMS device comprises a microelectronic substrate, a substrate signal electrode, and one or more substrate control electrodes. The MEMS device also includes a moveable composite overlying the substrate, having a composite signal electrode, one or more composite control electrodes, and a biasing element. In cross-section, the moveable composite comprises at least one electrode layer and, in most instances, a biasing layer. In length, the moveable composite comprises a fixed portion attached to the underlying substrate and a distal portion moveable with respect to the substrate electrode. The distal and/or medial portions of the moveable composite are biased in position when no electrostatic force is applied.

Abstract: The invention relates to a metallization for a film capacitor, wherein a dielectric capacitor film provided with a metallic coating is wound into a capacitor element in the running direction of the capacitor film, whereby the coating is provided with a segmentation.

Abstract: A tunable capacitor having low loss and a corresponding high Q is provided. The tunable capacitor includes first and second substrates having first and second capacitor plates disposed, respectively, thereon. The capacitor plates may include a high temperature superconductor material. A MEMS actuator, that is either driven by electrostatic force, heat or both, operably contacts the second substrate so that once the actuator is engaged it responds by displacing the second substrate, thereby varying the capacitance between said first capacitor plate and said second capacitor plate. As such, the capacitance can be controlled based upon the relative spacing between the first and second capacitor plates. The MEMS actuator may either be operably attached to the second substrate or detached, yet supporting, the second substrate.

Abstract: A microelectro-mechanical device which includes a fixed electrode formed on a substrate, the fixed electrode including a transparent, high resistance layer, and a moveable electrode formed with an anisotropic stress in a predetermined direction and disposed adjacent the fixed electrode. The device includes first and second electrically conductive regions which are isolated from one another by the fixed electrode. The moveable electrode moves to cover the fixed electrode and to electrically couple to the second conductive region, thus electrically coupling the first and second conductive regions, in response to a potential being applied across the fixed and moveable electrodes. The fixed electrode is transparent to electromagnetic signals or waves and the moveable electrode impedes or allows transmission of electromagnetic signals or waves.

Abstract: An impedance matching device includes a variable capacitor constituted by a non-linear dielectric thin film and an upper electrode disposed on a lower electrode formed on a substrate. The non-linear dielectric thin film is formed by a deposition, screen-printing, electroplating, or other technique, and changes its relative dielectric constant according to applied voltage. Therefore, the capacity of the variable capacitor is controlled and the impedance is matched, by simply controlling the applied voltage across the non-linear dielectric thin film. Consequently, the arrangement makes it possible to cut down the impedance matching device in size and cost, compared to an arrangement incorporating a capacitor and a coil for adjustment, effects a much simpler matching operation, and facilitates a manufacturing process.

Abstract: A high Q MEMS capacitor that can be continuously tuned with a large tuning ratio or reversibly trimmed using an electrostatic force. The tunable capacitor has a master/slave structure in which a control voltage is applied to the master (control) capacitor to set the capacitance of the slave (signal) capacitor to which an RF signal is applied via a suspended mechanical coupler. The master-slave structure reduces tuning error by reducing the signal capacitor's surface area and increasing its spring constant, and may eliminate the need for discrete blocking inductors by electrically isolating the control and signal capacitors. The trimmable capacitor provides an electrostatic actuator that selectively engages a stopper with teeth on a tunable capacitor structure to fix the trimmed capacitance.

Abstract: A fluid property sensor includes a substrate having a first electrode thereon, and a flexible member adjacent the substrate and the first electrode wherein the flexible member includes a second electrode. A signal generator generates a predetermined electrical signal across the first and second electrodes so that an electrostatic force is generated between the first and second electrodes and so that said flexible member deflects a predetermined distance. A measuring circuit measures an interval of time between the generation of the predetermined electrical signal and the deflection of the flexible member to the predetermined distance and determines a property of a fluid adjacent the flexible member based on the interval of time. For example, the sensor can be used to determine a viscosity of the fluid. Alternately, the fluid can be a compressible gas, and the sensor can be used to determine a pressure of the gas. Related methods are also discussed.

Abstract: The present invention provides a method and apparatus for maintaining application integrity in a hot, disconnected network environment. The present invention provides a system having a computer subsystem with a processor executing application programs in an operating system environment. The system also includes a network and a connection to connect the network to the computer system. A notification mechanism detects when the network resources are no longer connected and permits continued use of the computer subsystem while it remains disconnected from the network.