Abstract: The present disclosure provides an active pixel sensor and a flat panel detector. The active pixel sensor includes: a light sensing device configured to convert light sensed by the light sensing device into charges and supply the charges to a floating diffusion node; an amplification sub-circuit configured to amplify a signal according to a potential at the floating diffusion node and output the amplified signal through the output terminal; an adjustment sub-circuit configured to adjust, in response to a first control signal, a conversion gain from an amount of the light sensed by the light sensing device to the potential at the floating diffusion node; and a read sub-circuit configured to transmit a voltage of the input terminal of the read sub-circuit to the output terminal of the read sub-circuit according to a scan signal provided by the scan line.

Abstract: A tunable optical filter for a detector is presented including a plate having a top side and a bottom side. The plate has material properties making it transparent to a range of optical frequencies. A transparent metasurface is proximate the top side of the plate. The transparent metasurface is configured to have a transmissive pass band and a stop band. An undercarriage support structure is proximate the bottom side of the plate. The undercarriage support is responsive to photothermal heating. The undercarriage support is configured to deform from the photothermal heating caused by an undesired signal thereby shifting the stop band in frequency toward the undesired signal to block reception of the undesired signal by the detector.

Abstract: A power supply circuit includes a switchable match, including a high voltage bus connectable to a load, a low voltage bus connectable to the load such that the load is in series between the high voltage bus and the low voltage bus, at least two capacitors having a fixed value of capacitance selectively connectable between the high voltage bus and the low voltage bus and a plurality of solid state switches equal in number to the number of capacitors having a fixed value of capacitance connectable between the high voltage bus and the low voltage bus, each switch configured and arranged to selectively connect or disconnect one of the capacitors having a fixed value of capacitance selectively connectable between the high voltage bus and the low voltage bus into electrical communication between the high voltage bus and the low voltage bus, and a variable frequency power supply including a high voltage output connection, the high voltage connection connected to the high voltage bus.

Abstract: A display device includes a window containing a glass substrate, a display panel disposed under the window, and a digitizer disposed under the display panel, wherein the digitizer includes a base film disposed under the display panel, a first conductive layer disposed under the base film, a first insulating layer disposed under the first conductive layer, a second conductive layer disposed under the first insulating layer, a second conductive layer disposed under the second conductive layer, and the second insulating layer disposed under the second conductive layer, and the window, the display panel, and the digitizer may be capable of being folded and unfolded.

Abstract: A home appliance includes an electrical equipment compartment disposed in an upper portion of the home appliance, and including an upper side that is open, an electrical equipment compartment cover to cover the open upper side of the electrical equipment compartment, and including a speaker hole, a microphone accommodating portion which protrudes upward from an upper side of the electrical equipment compartment cover and including an accommodating space and a front portion that includes microphone holes laterally spaced apart from each other and which face toward a front of the home appliance, a microphone unit including a printed circuit board (PCB) disposed in the accommodation space behind the microphone holes and including microphone chips mounted on the PCB, and a speaker unit disposed in the electrical equipment compartment to correspond to the speaker hole.

Abstract: A radio frequency (RF) switch arrangement that improves the voltage handling capacity of a stack of switching elements (e.g., field-effect transistors (FETs)). The RF switch arrangement can include a ground plane and a stack arranged in relation to the ground plane, the stack including a plurality of switching elements coupled in series with one another. The RF switch arrangement can also include a plurality of capacitive elements, each of the plurality of capacitive elements providing a capacitive path across respective terminals of a corresponding one of the plurality of switching elements.

Abstract: The present disclosure relates to a home appliance capable of being operated by speech of a user. The home appliance includes a main body forming an outer appearance, a microphone including at least one sensing portion disposed to direct to the front of the main body to detect speech of a user, and a speaker unit disposed to be spaced apart from the microphone unit by a predetermined distance.

Abstract: Three-dimensional micro devices usable as electromagnetic and magnetomechanical energy converters, as micromagnetic motors or generators, and methods for their production. The three-dimensional micro devices exhibit high efficiency even at dimensions on the microscale and below, and the method for production, as well as mass production, is simple and economical. Moreover, the three-dimensional micro devices at least include one three-dimensional device produced using roll-up technology. This three-dimensional device includes all functional and structural components for full functionality. At least one functional or structural component is an element that is at least partially freely movable at least partially within a surrounding element and is arranged such that it can be rotated at least around one of its axes.

Abstract: An auto phase control drive circuit for a gyroscope apparatus is disclosed. The gyroscope apparatus has a gyro resonator, and the circuit comprises a first circuit and a second circuit. The first circuit includes a first electrode configured to face the gyro resonator, a first amplifier configured to be electrically connected with the first electrode and output a first signal, a variable capacitor electrically connected with the first amplifier, a second electrode configured to face the gyro resonator, to receive a second signal and to be electrically connected with the variable capacitor. The second circuit is configured to be electrically connected with the first circuit and to change a capacitance of the variable capacitor of the first circuit based on the first signal and the second signal to decrease a phase difference between the first signal and the second signal.

Abstract: Systems, devices, and methods for micro-electro-mechanical system (MEMS) tunable capacitors can include a fixed actuation electrode attached to a substrate, a fixed capacitive electrode attached to the substrate, and a movable component positioned above the substrate and movable with respect to the fixed actuation electrode and the fixed capacitive electrode. The movable component can include a movable actuation electrode positioned above the fixed actuation electrode and a movable capacitive electrode positioned above the fixed capacitive electrode. At least a portion of the movable capacitive electrode can be spaced apart from the fixed capacitive electrode by a first gap, and the movable actuation electrode can be spaced apart from the fixed actuation electrode by a second gap that is larger than the first gap.

Abstract: An AC power connector for connecting an AC power supply with a device is provided. The AC power connector includes at least one first element connectable with the AC power supply and at least one second element connectable with the device, the first element and the second elements being arranged at a first distance with respect to each other for defining a capacitance, wherein the at least one first element and the at least one second element are rotatable with respect to each other, wherein the first element and the second element are configured for a transfer of an AC power between the at least one first element and the at least one second element.

Abstract: An electronic device is provided. The electronic device includes a housing, a communication circuit disposed on one side of the housing, a multi-layered printed circuit board (PCB) disposed on one side of the housing and electrically connected to the communication circuit and an antenna radiator disposed on one side of the housing or defining at least a portion of an outer surface of the housing, and is electrically connected to the communication circuit and the multi-layered printed circuit board, wherein the multi-layered printed circuit board comprises a first conductive pattern disposed in at least one of a plurality of layers thereof to form a capacitance, a second conductive pattern disposed in at least another one of the plurality of layers thereof to form an inductance and a conductive plate disposed between the at least one and the at least other one of the plurality of layers and is electrically isolated from the first conductive pattern and the second conductive pattern.

Abstract: Aspects of the present disclosure provide semiconductor variable capacitor devices. In one embodiment, a semiconductor variable capacitor includes a gate oxide layer comprising a first layer portion with a first thickness and a second layer portion with a second thickness; a first non-insulative region disposed above the gate oxide layer; a first semiconductor region disposed beneath the gate oxide layer; a second semiconductor region disposed beneath the gate oxide layer and adjacent to the first semiconductor region, wherein the second semiconductor region comprises a different doping type than the first semiconductor region a second non-insulative region coupled to the first semiconductor region; and a control terminal coupled to a control region coupled to the second semiconductor region such that a first capacitance between the first non-insulative region and the second non-insulative region is configured to be adjusted by varying a control voltage applied to the control region.

Abstract: An electrowetting display device is presented. The electrowetting display device includes a first support plate and a plurality of pixel walls over the first support plate. The plurality of pixel walls are associated with an electrowetting pixel. The display device includes a storage capacitor beneath the electrowetting pixel. The storage capacitor includes a first plate, a second plate, and a dielectric material having a variable relative permittivity. The dielectric material is disposed between the first plate and the second plate. The display device includes a controller configured to control the relative permittivity of the dielectric material to set a capacitance value of the storage capacitor. In embodiments, the dielectric material includes at least one of a transition metal dichalcogenide and a thin-film Barium Strontium Titanate (BST).

Abstract: Systems, devices, and methods for micro-electro-mechanical system (MEMS) tunable capacitors can include a fixed actuation electrode attached to a substrate, a fixed capacitive electrode attached to the substrate, and a movable component positioned above the substrate and movable with respect to the fixed actuation electrode and the fixed capacitive electrode. The movable component can include a movable actuation electrode positioned above the fixed actuation electrode and a movable capacitive electrode positioned above the fixed capacitive electrode. At least a portion of the movable capacitive electrode can be spaced apart from the fixed capacitive electrode by a first gap, and the movable actuation electrode can be spaced apart from the fixed actuation electrode by a second gap that is larger than the first gap.

Abstract: First, a three-dimensional substrate is placed such that the rear surface is oriented upward. Next, a translucent member is placed inside a recessed portion so as to cover a through-hole by bringing a first surface of the translucent member into contact with a protruding portion. Next, an element is placed on the rear surface of the three-dimensional substrate so as to cover the recessed portion. Next, a sealing resin is filled between three-dimensional substrate and the element, between the element and a second surface of the translucent member that opposes the first surface, between a side surface of the translucent member and the three-dimensional substrate, and between the first surface of the translucent member and the three-dimensional substrate. In this way, the element and the translucent member are integrated with the three-dimensional substrate.

Abstract: A variable capacitor includes a substrate; a plurality of electrodes on the substrate; a phase change material on the plurality of electrodes; and a thermo-modifying element adjacent to the phase change material, wherein the thermo-modifying element changes a temperature of the phase change material. The change in temperature of the phase change material may change a capacitance between the plurality of electrodes. The thermo-modifying element may be integrated into the substrate. The thermo-modifying element may include a heater that raises a temperature of the phase change material to change from a solid state to a liquid state. The thermo-modifying element may include a layer of metal adjacent to the substrate, and wherein when electrical current flows through the layer of metal, the layer of metal forms a resistive heater and raises a temperature of the phase change material to change from a solid state to a liquid state.

Abstract: The present provides a variable capacitance element enabling a further reduction in capacitance variation among variable capacitance elements, and provides a packaged circuit including the variable capacitance element. A variable capacitance element is configured to include an element body unit, a compensation unit, a first external terminal for signals, a second external terminal for signals, external terminals for control, and external terminals for capacitance compensation. The compensation unit has second variable-capacitance capacitor units C9 to C 11, each including a second dielectric layer formed of a ferroelectric material, and is connected to the element body unit, and has a capacitance varying according to a control voltage signal.

Abstract: A device includes a thermally deformable assembly accommodated in a cavity of the interconnection part of an integrated circuit. The assembly can bend when there is a variation in temperature, so that its free end zone is displaced vertically. The assembly can be formed in the back end of line of the integrated circuit.

Abstract: A radio frequency (RF) switch arrangement that improves the voltage handling capacity of a stack of switching elements (e.g., field-effect transistors (FETs)). The RF switch arrangement can include a ground plane and a stack arranged in relation to the ground plane, the stack including a plurality of switching elements coupled in series with one another. The RF switch arrangement can also include a plurality of capacitive elements, each of the plurality of capacitive elements providing a capacitive path across respective terminals of a corresponding one of the plurality of switching elements.

Abstract: A method, communication device, and computer program product mitigate Specific Absorption Rating (SAR) exposure to a user proximate to a communication device. The method includes an on-device measurement receiver of a communication device detecting a first signal level corresponding to power delivered to a first antenna. The method includes a controller determining a first return loss value based on a first transmit power setting and the first signal level. The method includes the controller determining whether the first return loss value differs from a baseline value by a threshold amount. In response to the controller determining that the first return loss value differs by the threshold amount, the controller causes the communication device to reduce the power delivered to the first antenna.

Abstract: There are provided PCB capacitor variable device and method. The PCB capacitor variable device includes: a PCB forming any parallel capacitor by disposing a dielectric layer between a first pattern and a second pattern; and a switch unit connected to a pattern of one of the capacitors to switch the pattern of one of the capacitors so as to control equivalent capacitance of the capacitor. According an exemplary embodiment of the present disclosure, the capacitor is implemented using the PCB pattern and the dielectric substance and therefore the miniaturization and weight lightening of the wireless communication system may be implemented. Further, according to an exemplary embodiment of the present disclosure, the capacitor may be selectively switched and therefore the optimized frequency required in the output of the amplification unit may be implemented.

Abstract: There are disclosed herein various implementations of composite semiconductor devices including a voltage protected device. In one exemplary implementation, a normally OFF composite semiconductor device comprises a normally ON III-nitride power transistor having a first output capacitance, and a low voltage (LV) device cascoded with the normally ON III-nitride power transistor to form the normally OFF composite semiconductor device, the LV device having a second output capacitance. A ratio of the first output capacitance to the second output capacitance is set based on a ratio of a drain voltage of the normally ON III-nitride power transistor to a breakdown voltage of the LV device so as to provide voltage protection for the LV device.

Abstract: A method for depositing material layers with gap variation between film deposition operations is provided. A material layer is deposited over a substrate and is performed in a plasma chamber having a bottom electrode and a top electrode. The method sets a first gap between the bottom and top electrodes and performs plasma deposition to deposit a first film of the material layer over the substrate while the first gap is set between the bottom and top electrodes. Setting a second gap between the bottom a top electrodes and performs plasma deposition to deposit a second film of the material layer over the substrate while the second gap is set between the bottom and top electrodes. The material layer is from the first and second films and the first gap is varied to the second gap to offset pre-characterized non-uniformities when depositing the first film followed by the second film.

Abstract: A switching circuit includes: an electronic switch comprising one or more diodes for switching a capacitor within an electronic variable capacitor array; a first power switch receiving a common input signal and a first voltage input; and a second power switch receiving the common input signal and a second voltage input, wherein the second voltage input is opposite in polarity to the first voltage input, and the first power switch and the second power switch asynchronously connect the first voltage input and the second voltage input, respectively, to a common output in response to the common input signal, the one or more diodes being switched according to the first voltage input or the second voltage input connected to the common output.

Abstract: The invention relates to a variable-capacitance electrical capacitor comprising a first electrode and a second electrode facing the first electrode and a zone of a dielectric material arranged between said first and second electrodes characterized in that the second electrode is formed at least on one hand of a primary electrode made of an electrically conductive material and, at least on the other, of an additional electrode comprising a state-change material, the primary electrode and the additional electrode facing the first electrode, said state-change material being arranged at least partially in contact with the primary electrode and configured to alternatively adopt a high-resistivity state wherein the additional electrode is electrically insulated from the primary electrode and a low-resistivity state wherein the additional electrode is in electrical conduction with the primary electrode so as to vary the electrically active surface area of the second electrode.

Abstract: The present invention generally relates to a MEMS DVC and a method for fabrication thereof. The MEMS DVC comprises a plate movable from a position spaced a first distance from an RF electrode and a second position spaced a second distance from the RF electrode that is less than the first distance. When in the second position, the plate is spaced from the RF electrode by a dielectric layer that has an RF plateau over the RF electrode. One or more secondary landing contacts and one or more plate bend contacts may be present as well to ensure that the plate obtains a good contact with the RF plateau and a consistent Cmax value can be obtained. On the figure PB contact is the plate bend contact, SL contact is the Second Landing contact and the PD electrode is the Pull Down electrode.

Abstract: The operating device for an electrical apparatus or a system, in particular for a vehicle component, is provided with at least one elastically mounted operating element (12), a counter-element (14), relative to which the at least one operating element (12) is movable when actuated, thereby varying the distance, namely as seen in the movement direction, and at least one capacitor (38) which comprises a first carrier body (20) with a first capacitor electrode (34) and an elastically bendable second carrier body (22), designed as a bending bar, having a first end (26) and a second end (32) opposite said first end and having a second capacitor electrode (36) opposite the first capacitor electrode (34). Connected to the first and second capacitor electrode (34, 36) is an evaluation unit (42) for determining the capacitance and/or a change in the capacitance of the at least one capacitor (38) upon actuation of the at least one operating element (12).

Abstract: An optical detector for detecting radio frequency (RF) signals, the optical detector comprising a light source and a photodetector, and an electrical circuit comprising a position dependent capacitor and a bias voltage source adapted for providing a bias voltage for biasing the position dependent capacitor, the position dependent capacitor comprising an electrode and a membrane being displaceable in reaction to RF signals incident on the membrane, the membrane being metallized, has a thickness of less than 1 ?m and a quality factor, Qm, of at least 20,000, and the distance between the membrane and the electrode being less than 10 ?m.

Abstract: A self-capacitance in-cell touch screen including a glass array substrate, thin film transistors disposed on the substrate, and pixel electrodes electrically connected with the thin film transistors, a planarizing layer between the pixel electrodes and the thin film transistors. The transparent touch control sensing electrode, a first insulation layer, a second insulation layer, and a metal connection line are disposed on the planarizing layer in sequence. The metal connection line is electrically connected to the touch control sensing electrode through via holes. The first insulation layer is between the planarizing layer and the pixel electrode, and the second insulation layer is located on the pixel electrode. The touch control sensing electrodes are common electrodes to transfer a common voltage and a touch scan signal by time-sharing during a period of displaying one frame image. A method of manufacturing self-capacitance in-cell touch screens and a liquid crystal displays is also disclosed.

Abstract: A protector with a sensor is installed on a sliding door for detecting an object by touch between two core wires in a hollow part. In a terminal part of the protector with the sensor, the core wires drawn out are connected with legs of a resistor. A primary seal is formed by grinding a surface of the hollow part of the terminal part of an extrusion molded part, positioning a ground part on a die and covering wire connection parts and a side of another end of an insert while also covering the ground part by means of injection molding. A secondary seal is formed by means of the injection molding for coating a part formed with the primary seal for forming an external shape of a product.

Abstract: In a MEMS device, the manner in which the membrane lands over the RF electrode can affect device performance. Bumps or stoppers placed over the RF electrode can be used to control the landing of the membrane and thus, the capacitance of the MEMS device. The shape and location of the bumps or stoppers can be tailored to ensure proper landing of the membrane, even when over-voltage is applied. Additionally, bumps or stoppers may be applied on the membrane itself to control the landing of the membrane on the roof or top electrode of the MEMS device.

Abstract: A tunable capacitor includes a first electrode and a second electrode, each being formed of a conductive material. The tunable capacitor further includes a third electrode between the first electrode and the second electrode, and a dielectric material interposed between the first electrode and the third electrode, and between the second electrode and the third electrode. The third electrode is movable relative to the first electrode and the second electrode by a stepper motor, to adjust and tune a capacitance of the tunable capacitor.

Abstract: High-speed high-power semiconductor devices are disclosed. In an exemplary design, a high-speed high-power semiconductor device includes a source, a drain to provide an output signal, and an active gate to receive an input signal. The semiconductor device further includes at least one field gate located between the active gate and the drain, at least one shallow trench isolation (STI) strip formed transverse to the at least one field gate, and at least one drain active strip formed parallel to, and alternating with, the at least one STI strip. The semiconductor device may be modeled by a combination of an active FET and a MOS varactor. The active gate controls the active FET, and the at least one field gate controls the MOS varactor. The semiconductor device has a low on resistance and can handle a high voltage.

Abstract: A variable capacitor includes a fixed main capacitor electrode disposed in a first metal layer overlying a substrate, a second main capacitor electrode spaced from the fixed main capacitor electrode, and a movable capacitor electrode disposed in the first metal layer adjacent the fixed main capacitor electrode. The movable capacitor electrode can be caused to be in a first position ohmically electrically connected to the fixed main capacitor electrode such that the variable capacitor has a first capacitance value or in a second position spaced from the fixed main capacitor electrode such that the variable capacitor has a second capacitance value.

Abstract: A liquid micro-electro-mechanical system (MEMS) capacitor includes a first capacitor plate, a second capacitor plate, a channel, a dielectric doped droplet, and a droplet activating module. The channel is implemented or embedded in one or more layers of a board and the dielectric doped droplet is contained in the channel. The droplet activating module operable to change the dielectric doped droplet with respect to the first and second capacitive plates, which are proximal to the channel and at a distance from each other, thereby changing a dielectric property of the liquid MEMS capacitor.

Abstract: Systems and methods are provided for fabricating a thin film capacitor involving depositing an electrode layer of conductive material on top of a substrate material, depositing a first layer of ferroelectric material on top of the substrate material using a metal organic deposition or chemical solution deposition process, depositing a second layer of ferroelectric material on top of the first layer using a high temperature sputter process and depositing a metal interconnect layer to provide electric connections to layers of the capacitor.

Abstract: An electronic device having a variable capacitance element, includes a support substrate providing physical support, a pair of anchors formed on the support substrate, and having support portions in a direction perpendicular to a surface of the substrate, a movable electrode supported by the support portions of the pair of anchors, having opposing first and second side surfaces constituting electrode surfaces, and at least partially capable of elastic deformation, a first fixed electrode supported above the support substrate, and having a first electrode surface opposing to the first side surface of the movable electrode, and a second fixed electrode supported above the support substrate, and having a second electrode surface opposing to the second side surface of the movable electrode.

Abstract: The invention relates to a varactor with an actuator, wherein the first actuator surface (2a) of the actuator is embodied on a substrate (1), and a second actuator surface (2b) is embodied on a first movable membrane (3a). In this context, the first movable membrane (3a) is arranged above an upper side (1a) of the substrate (1). A second movable membrane (2b) is arranged below a lower side (1b) of the substrate (1) facing away from the upper side (1a). The invention further relates to a varactor system made from two such varactors.

Abstract: An amplifier provides a first amplifier circuit, a second amplifier circuit, a first hybrid-coupler circuit and a termination. The hybrid-coupler circuit provides an output terminal and an insulation terminal. In this context, the termination is connected to the insulation terminal of the hybrid-coupler circuit. The termination comprises a first capacitor and/or an inductance, which is disposed directly at the insulation terminal of the hybrid-coupler circuit.

Abstract: A novel semiconductor variable capacitor is presented. The semiconductor structure is simple and is based on a semiconductor variable MOS capacitor structure suitable for integrated circuits, which has at least three terminals, one of which is used to modulate the equivalent capacitor area of the MOS structure by increasing or decreasing its DC voltage with respect to another terminal of the device, in order to change the capacitance over a wide ranges of values. Furthermore, the present invention decouples the AC signal and the DC control voltage minimizing the distortion and increasing the performance of the device, such as its control characteristic. The present invention is simple and only slightly dependent on the variations due to the fabrication process. It exhibits a high value of capacitance density and, if opportunely implemented, shows a quasi linear dependence of the capacitance value with respect to the voltage of its control terminal.

Abstract: A high-frequency device includes an antenna coil, a variable capacitance element, and an RFIC. The variable capacitance element is configured by capacitor units in each of which a ferroelectric film is sandwiched between capacitor electrodes, and a capacitance value changes according to a control voltage applied between the capacitor electrodes. A control voltage application circuit configured by a plurality of resistance elements of different resistance values, and a resistance element of the variable capacitance element unit configured to apply a control voltage to the variable capacitance element are arranged in a layered manner above the capacitor unit. Thus, a variable capacitance element and a high-frequency device that includes a control voltage application circuit eliminating problems such as distortion due to active elements and growing IC size along with complication of circuit architecture, and ensuring reliability on impact due to falling or the like, are provided.

Abstract: An electronic element includes a fixed portion, and a movable portion which is movable with respect to the fixed portion and which is provided to generate a spring force to make restoration to a predetermined position. The fixed portion is provided with a first driving electrode and a first signal electrode. The movable portion is provided with a second driving electrode and a second signal electrode. An electrostatic force is generated between the first driving electrode and the second driving electrode by a voltage applied therebetween so that the electrostatic force resists against the spring force; and the first and second driving electrodes and the first and second signal electrodes are arranged so that the electrostatic force is generated in a direction in which a spacing distance between the first and second signal electrodes is widened.

Abstract: Systems, devices, and methods for adjusting tuning settings of tunable components, such as tunable capacitors, can be configured for calibrating a tunable component. Specifically, the systems, devices and methods can measure a device response for one or more inputs to a tunable component, store a calibration code in a non-volatile memory that characterizes the device response of the tunable component, and adjust a tuning setting of the tunable component based on the calibration code to achieve a desired response of the tunable component.

Abstract: The present subject matter relates to the use of current splitting and routing techniques to distribute current uniformly among the various layers of a device to achieve a high Q-factor. Such current splitting can allow the use of relatively narrow interconnects and feeds while maintaining a high Q. Specifically, for example a micro-electromechanical systems (MEMS) device can comprise a metal layer comprising a first portion and a second portion that is electrically separated from the first portion. A first terminus can be independently connected to each of the first portion and the second portion of the metal layer, wherein the first portion defines a first path between the metal layer and the first terminus, and the second portion defines a second path between the metal layer and the first terminus.

Abstract: A highly linear, variable capacitor array constructed from multiple cells. Each cell includes a pair of passive, capacitor components connected in anti-parallel. The capacitor components may be Metal Oxide Semiconductor (MOS) capacitors. A control circuit applies bias voltages to bias voltage terminals associated with each capacitor component, to thereby control the overall capacitance of the array.

Abstract: A variable capacitor device is disclosed in which the capacitive tuning ratio and quality factor are increased to very high levels, and in which the capacitance value of the device is tuned and held to a desired value with a high level of accuracy and precision using a laser micromachining tuning process on suitably designed and fabricated capacitor devices. The tuning of the variable capacitor devices can be performed open-loop or closed-loop, depending on the precision of the eventual capacitor value needed or desired. Furthermore, the tuning to a pre-determined value can be performed before the variable capacitor device is connected to a circuit, or alternatively, the tuning to a desired value can be performed after the variable capacitor device has been connected into a circuit.

Abstract: Embodiments of a method include forming a metal-insulator-metal (MIM) capacitor including a first electrode and a second electrode and an insulator layer between the first and second electrodes, the MIM capacitor also including a reactive layer; and altering the reactive layer to change a capacitive value of the MIM capacitor.

Abstract: A varactor includes a first PTC region, which comprises a ceramic material with a positive temperature coefficient with respect to the resistance. The varactor also includes a capacitor region that includes a first electrode, a second electrode, and a first dielectric layer arranged between the first electrode and the second electrode. The first PTC region and the capacitor region are connected thermally conductively to one another. The capacitance of the capacitor region can be changed by applying a bias to the first PTC region, the capacitor region or to the first PTC region and the capacitor region.

Abstract: Logic circuit for integrated circuit comprising a variable supply voltage source, the variation of which comprises at least three successive phases, a first phase of increasing the voltage from a zero value to a nominal voltage, a second phase of maintaining the supply voltage at the nominal voltage and a third phase of reducing the supply voltage from the nominal voltage to a zero value, and at least two mechanical switches, said switches being microelectromechanical switches or nanoelectromechanical switches, and means of switching said switches.