Abstract: An electric double layer capacitor including at least one pair of polarizable electrodes connected to current collectors, a separator made of ion-permeable but electron-insulating material interposed between the electrodes in each pair of electrodes, and a liquid electrolyte. According to the invention the electrodes include a layer of carbon particles having a narrow distribution of nanopores therein, the pore sizes of the nanopores being adapted to fit the ion sizes of the electrolyte. The invention also relates to a method of manufacturing such a supercapacitor.

Abstract: A dielectric ceramic has a ceramic structure of crystal grains and grain boundaries between the crystal grains. The crystal grains are of a main component represented by the formula ABO3 and an additive containing a rare earth element wherein A is at least one of barium, calcium, and strontium, barium being an essential element, and B is at least one of titanium, zirconium, and hafnium, titanium being an essential element. The average rare earth element concentration in the interior of the crystal grains is about 50% or less the average rare earth element concentration at the grain boundaries. Furthermore, about 20% to 70% of the crystal grains have a rare earth element concentration in the center of the crystal grain of at least about {fraction (1/50)} the maximum rare earth element concentration in a region extending inward from the surface by a distance corresponding to about 5% of the diameter of the crystal grain.

Abstract: In a process for manufacturing a dielectric capacitor, an IrO2 film, an Ir film, an amorphous film, and a Pt film-are sequentially made on a Si substrate. The SBT film may comprise BixSryTa2.0Oz, where the atomic composition ratio maybe within the range of 0≦Sr/Ti≦1.0, 0≦Ba/Ti≦1.0. The Pt film, the amorphous film, the Ir film, and the IrO2 film formed into a dielectric capacitor and the amorphous film is annealed to change its amorphous phase to a crystal phase of a perovskite type crystalline structure and thereby obtain the SBT film. The process may include a lower electrode made from an organic metal source material selected from a group consisting of Bi(C6H5)3, Bi(o-C7H7)3, Bi(O-C2H5)3, Bi(O-iC3H7)3, Bi(O- tC4H9)3, Bi(O-tC5H11)3, Sr(THD)2, Sr(THD)2 tetraglyme, Sr(Me5C5)2·2THF, Ti(i-OC3H7)4, TiO(THD)2, Ti(THD)2(i-OC3H7)2, Ta(i-OC3H7)5, Ta(iOC3H7)4THD, Nb(i-OC3H7)5, Nb(i- OC3H7)4THD.

Abstract: A dielectric layer comprises lanthanum, aluminum and oxygen and is formed between two conductors or a conductor and substrate. In one embodiment, the dielectric layer is graded with respect to the lanthanum or aluminum. In another embodiment, an insulating layer is formed between the conductor or substrate and the dielectric layer. The dielectric layer can be formed by atomic layer chemical vapor deposition, physical vapor deposition, organometallic chemical vapor deposition or pulsed laser deposition.

Abstract: A capacitor structure is formed on a substrate member having one or more via holes therein. Metallization portions within the via holes of the substrate member form part of the plates of the capacitor.

Abstract: A dielectric ceramic compact is provided which can decrease loss and heat generation under high frequency and high voltage or large current conditions, which exhibits a stable insulating resistance by AC or DC loading, and which can form a laminated ceramic capacitor using nickel or the like as an internal electrode material. The reduction-resistant dielectric ceramic compact is formed of an auxiliary sintering agent and a solid solution containing barium titanate as a primary component represented by the formula ABO3+aR+bM, where R is a compound containing an element such as La, and M is a compound containing an element such as Mn. In addition, 1.000<A/B≦1.035, 0.005≦a≦0.12, and 0.005≦b≦0.12. Furthermore, in the ceramic, the crystalline axis ratio c/a obtained by x-ray diffraction in a temperature range of −25° C. or above satisfies 1.000≦c/a≦1.

Abstract: A multilayer ceramic capacitor comprises dielectric ceramic layers and conductive layers, the dielectric ceramic layers including core-shell structured ceramic particles. The ceramic particles disposed nearer to the conductive layers have shell portions having thickness larger than those of the ceramic particles disposed farther from the conductive layers.

Abstract: A dielectric ceramic composition includes sintered ceramic grains having a core-shell structure, wherein smaller than or equal to 50% of the grains have a domain width of twin less than 20 nm; 30% to 70% of the grains have a domain width of twin in the range from 20 nm to 50 nm; less than or equal to 50% of the grains have a domain width of twin greater than 50 nm or have no twin. A ceramic capacitor includes more than one internal electrode and one or more dielectric layers composed of a dielectric ceramic composition, each of the dielectric layers being sandwiched between two neighboring internal electrodes.

Abstract: A multiplayer ceramic electronic device comprises an element body constituted by dielectric layers and internal electrode layers alternately stacked. A carbon amount in the element body after firing is not less than 1 ppm and not more than 100 ppm (preferably not less than 2 ppm and not more than 50 ppm, further preferably not less than 3 ppm and not more than 15 ppm). The relationship of the carbon amount in the element body after firing and transverse strength of the electronic device satisfies a formula F=A*ln X+B (ln is natural logarithm) where 23≦A≦28, B=350 to 400, F: transverse strength (MPa) and X: carbon amount (ppm) contained in element body.

Abstract: The invention relates to a multiple-component unit in which at least two passive components have been realized one above the other. A multiple-component unit thus comprises at least one resistor and at least one capacitor, or at least two capacitors. This space-saving construction allows for a miniaturization of circuits. A further miniaturization can be achieved in that the multiple-component units are not manufactured as discrete components, but are integrated into ICs.

Abstract: A method for configuring a bypass capacitor for use in conjunction with an integrated circuit device is disclosed. In an exemplary embodiment of the invention, the method includes selecting mechanical dimensions for the bypass capacitor, the mechanical dimensions causing the bypass capacitor to exhibit electrical losses at a clock frequency of the integrated circuit device. The bypass capacitor preferably includes a ferroelectric dielectric material. In addition, the selection of mechanical dimensions for the bypass capacitor determines a mechanical resonance frequency for the bypass capacitor, with the mechanical resonance frequency corresponding to the clock frequency.

Abstract: A dielectric ceramic composition includes sintered ceramic grains having a core-shell structure, wherein smaller than or equal to 50% of the grains have a domain width of twin less than 20 nm; 30% to 70% of the grains have a domain width of twin in the range from 20 nm to 50 nm; less than or equal to 50% of the grains have a domain width of twin greater than 50 nm or have no twin. A ceramic capacitor includes more than one internal electrode and one or more dielectric layers composed of a dielectric ceramic composition, each of the dielectric layers being sandwiched between two neighboring internal electrodes.

Abstract: The present invention relates to a thin film capacitor device having a copper wiring layer, a dielectric layer, and a barrier layer interposed between the wiring layer and the dielectric layer. The barrier layer has the function of preventing diffusion of copper of the wiring layer. The thin film capacitor device may also include an insulating substrate, a planarizing layer, an adhesion layer, and an intermediate layer. The present invention may also relate to a printed circuit substrate having the described thin film capacitor device built therein as a capacitor.

Abstract: A dielectric ceramic material containing BaTiO3 as a primary component and a rare earth element as an additional component, wherein the material satisfies the relation 0.7≦M/N so as to make the density of the rare earth metal uniform between crystal grains, and the material satisfies the relation 0.8≦L/M so as to make the density of the rare earth metal uniform in a crystal grain. In these relations, M represents the number of crystal grains satisfying the relation 0.5≦Di/D; N represents the number of crystal grains constituting the ceramic material; and L represents the number of crystal grains satisfying the relations 0.5≦Di/D and Si/Di≦0.3, wherein Di represents the mean density of the rare earth element in an arbitrary crystal grain i, D represents the mean density of the rare earth element in the entirety of the ceramic material, and Si represents the standard deviation of the density of the rare earth element in the crystal grain i.

Abstract: A multilayer ceramic capacitor comprises a sintered ceramic compact including primary crystalline phases and secondary phases. The primary crystalline phases mainly contain CaTiO3 and CaZrO3. The secondary phases mainly contain Si and Ca. The amount of Ca in the secondary phase is about 30 mol % or less.

Abstract: A sorting method of monolithic ceramic capacitors in which high reliable sorting can be efficiently achieved based on measuring an insulating resistance involves first performing a burn-in process, which applies not less than double of the rated voltage at the maximum working temperature to a monolithic ceramic capacitor. Thereafter, a high temperature insulation resistance measuring process, which involves measuring an insulation resistance while applying not less than the rated voltage at a temperature of not less than 70° C. to the monolithic ceramic capacitor, is performed so that monolithic ceramic capacitors having abnormal insulation resistances are eliminated. Preferably, the direction of applied voltage in the burn-in process agrees with the direction of applied voltage in the high temperature insulation resistance measuring process.

Abstract: A dielectric ceramic compact is provided which can be obtained by sintering at a low temperature of 1000° C. or less, can be obtained by co-sintering a dielectric ceramic composition with a metal having superior electrical conductivity, such as Ag, and has a high relative dielectric constant, a high Q and a small temperature coefficient of dielectric properties. The dielectric ceramic composition combines an xBaO-yTiO2-zReO3/2 ceramic composition and a glass composition; wherein 8≦x≦18, 52.5≦y≦65, 20≦z≦40, in which x, y, and z represent mole percent, x+y+z=100 and Re indicates a rare earth element, and the glass composition comprises about 10 to 25 wt % of SiO2, about 10 to 40 wt % of B2O3, about 25 to 55 wt % of MgO, 0 to about 20 wt % of ZnO, 0 to about 15 wt % of Al2O3, about 0.5 to 10 wt % of Li2O and 0 to about 10 wt % of RO in which R is at least one selected from the group consisting of Ba, Sr and Ca.

Abstract: A dielectric ceramic composition contains 100% by weight of main component composed of about 35 to 55% by weight of SrTiO3, about 10 to 35% by weight of PbTiO3, about 5 to 12% by weight of CaTiO3, about 8 to 25% by weight of Bi2O3 and about 5 to 13% by weight of TiO2, and about 0.02 to 0.5% by weight of MnO, about 0.05 to 2% by weight of an oxide of at least one element selected from the group consisting of La, Ce, Nd, Pr, Sm, Dy, Er and Y, and about 0.02 to 0.8% by weight of CuO. The dielectric ceramic composition can provide a capacitor which exhibits a low loss and a high dielectric constant, and which can be used in the high frequency region, thereby permitting the advance in miniaturization of the capacitor.

Abstract: An oxide dielectric film (7) is formed of barium strontium titanate to have a thickness of 300 to 600 Å, and a first platinum layer (81) is deposited thereon by, e.g., sputtering at a temperature not higher than 250° C. to have a thickness of 250 to 500 Å. Further, a second platinum layer (82) is deposited on the first platinum layer (81) by, e.g., sputtering at a temperature of 250 to 500° C. to have a thickness of 250 to 500 Å. Since the first platinum layer (81) has less grain boundary and is hard to connect to that of the second platinum layer (82), with less grain boundary diffusion caused, even if a hydrogen sintering of an aluminum interconnection layer (11) is performed, reduction species are unlikely to reach the oxide dielectric film (7) through the grain boundary. That suppresses deterioration of the oxide dielectric film (7) to avoid an increase of leak current therein.

Abstract: Dielectric ceramic includes dielectric ceramic grains having BaTiO3 as a major component thereof, a portion of the dielectric ceramic grains having a ferroelectric core and a paraelectric shell into which Mg and a rare earth element are diffused. The shell being located at least on a part of a surface of the core, wherein the shell includes at least two shell portions having different components diffused thereinto. The shell portions can be radially disposed on one another or be in direct contact with the surface of the core.

Abstract: The present invention provides an electrode material for capacitors, capable of ensuring a large capacitance per unit weight without worsening the leakage current property, and a capacitor using the material. The present invention also provides an electrode material for capacitors, obtained by reacting a tantalum metal and/or a niobium metal or an alloy thereof having an oxide film on the surface thereof with an alkali solution to form a tantalic acid compound and/or a niobic acid compound on the surface thereof. Furthermore, the present invention provides a capacitor using the electrode material.

Abstract: A capacitive energy storage device for use at cryogenic temperatures is provided including first and second electrode layers having a layer of dielectric material there between. The electrode layers include an electrically conductive material having a formula selected from YBa2Cu3Ox and Bi2Ca2Sr2Cu3Oy. A method of storing electrical charge in a capacitive energy storage device is also provided.

Abstract: The present invention provides a dielectric ceramic composition whose electrostatic capacity has an excellently low temperature dependence; which can be fired in a reducing atmosphere; and which is advantageously used in a laminated ceramic capacitor having an internal electrode formed of a base metal such as nickel or nickel alloy. The dielectric ceramic composition is represented by the following formula: {Ba1-xCaxO}mTiO2+&agr;MgO+&bgr;MnO, wherein 0.001≦&agr;≦0.05; 0.001≦&bgr;≦0.025; 1.000<m≦1.035; and 0.02≦x≦0.15.

Abstract: A dielectric composition containing at least calcium titanate, strontium titanate, and barium titanate, wherein at least the molar ratios of composition of the three are such that the molar ratio of composition (P) of calcium titanate is 0.5 to 0.85, the molar ratio of composition (Q) of strontium titanate is 0.05 to 0.4, and the molar ratio of composition (R) of barium titanate is 0.1 to 0.2 (where, P+Q+R=1).

Abstract: A dielectric ceramic composition comprising a main component of composed mainly of barium titanate, a first subcomponent including at least one compound selected from MgO, CaO, BaO, SrO and Cr2O3, a second subcomponent containing silicone oxide as a main composition, a third subcomponent including at least one compound selected from V2O5, MoO3, and WO3, a fourth subcomponent including an oxide of R1 (where R1 is at least one element selected from Sc, Er, Tm, Yb, and Lu), and a fifth subcomponent including CaZrO3 or CaO+ZrO2, wherein the ratios of the subcomponents to 100 moles of the main component of composed mainly of barium titanate are the first subcomponent of 0.1 to 3 moles, the second subcomponent of 2 to 10 moles, the third subcomponent of 0.01 to 0.5 moles, the fourth subcomponent of 0.5 to 7 moles (where the number of moles of the fourth subcomponent is the ratio of R1 alone), and the fifth subcomponent of 0<fifth subcomponent≦5 moles.

Abstract: A nonreducing dielectric contains a main-component having a perovskite crystal phase and satisfying the formula (Ca1-a-b-cSraBabMgc)m(Zr1-w-x-y-zTiwMnxNiyHfz)O3 and a compound oxide represented by the formulae (Si, T)O2—MO—XO and (Si, T)O2—(Mn, M′)O—Al2O3. The ratio of the intensity of the maximum peak of a crystal phase not of the perovskite crystal phase to the intensity of the maximum peak assigned to the perovskite crystal phase appearing at 2&thgr;=25 to 35° is about 5% or less in a CuK&agr; X-ray diffraction pattern.

Abstract: A monolithic capacitor including a sintered body formed from a TiO2-containing reduction-resistant dielectric ceramic material; a plurality of internal electrodes which are formed inside the sintered body, the electrodes being formed of a base metal; and first and second external electrodes which are formed on the sintered body, the internal electrodes being electrically connected to the external electrodes; wherein the amount of Ti contained in a secondary phase of the sintered body is about 2 wt. % or less as TiO2. A process for producing the monolithic capacitor of the present invention is also disclosed.

Abstract: A dielectric ceramic composition comprises 100 parts by weight of a primary constituent, about 0.1 to 25 parts by weight of a first secondary constituent comprising a SiO2-based glass not containing lead oxide, and about 20 parts by weight or less of a second secondary constituent comprising manganese oxide (MnO). The primary constituent is represented by the formula x(Ba&agr;Ca&bgr;Sr&ggr;)O-y[(TiO2)1−m(ZrO2)m]-zRe2O3 wherein x+y+z=100 on a molar basis, &agr;+&bgr;+&ggr;=1, 0≦&bgr;+&ggr;≦0.8, 0<m<0.15, and Re is at least one rare earth element. The mole fraction (x, y, z) of (Ba&agr;Ca&bgr;Sr&ggr;)O, (TiO2)1−m(ZrO2)m, and Re2O3 lies within a range surrounded by points in a ternary diagram, depending on the content of the ceramic capacitors. The dielectric ceramic composition can be sintered at low temperatures and exhibits a high specific dielectric constant and a high Q value.

Abstract: A dielectric ceramic which exhibits small variation in dielectric constant, allows use of a base metal, can be fired in a reducing atmosphere and which is suitable for constituting a dielectric ceramic layer for, e.g., a laminated ceramic capacitor is obtained by firing barium titanate powder in which the c-axis/a-axis ratio in the perovskite structure is about 1.000 or more and less than about 1.003 and the amount of OH groups in the crystal lattice is about 2.0 wt. % or less. The barium titanate powder starting material preferably has a maximum particle size of about 0.3 &mgr;m or less and an average particle size of about 0.05-0.15 &mgr;m. Each particle of the barium titanate powder preferably comprises a low-crystallinity portion and a high-crystallinity portion, the diameter of the low-crystallinity portion being about 0.5 times or more the particle size of the powder.

Abstract: A ceramic electronic component comprising external electrodes having first electrode layers containing at least a noble metal, cuprous oxide, and glass ingredient electrically connected to internal electrodes having a noble metal. As the ceramic electronic components, for example, a multi-layer ceramic capacitor, multi-layer varistor, multi-layer dielectric resonator, multi-layer piezoelectric element, etc. may be mentioned.

Abstract: A dielectric ceramic composition comprises a compound oxide comprising barium titanate BamTiO3 as a major component and RO3/2, CaO, MgO, and SiO2, as accessory components, wherein R is at least one element selected from the group consisting of Y, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm and Yb, wherein the compound oxide satisfies the following relationship: 100BamTiO3+aRO3/2+bCaO+cMgO+dSiO2, wherein, on a molar basis, 0.990≦m≦1.030, 0.5≦a≦6.0, 0.10≦b≦5.00, 0.010≦c<1.000, and 0.05 ≦d<2.00. The dielectric ceramic composition satisfies the B characteristic defined by the Japanese Industrial Standard (JIS) and the X7R characteristic defined by the EIA standard with respect to dependence of electrostatic capacitance on temperature, and has a large CR product of the insulation resistance and the electrostatic capacitance. A monolithic ceramic capacitor which includes thin dielectric layers composed of this dielectric ceramic composition is highly reliable.

Abstract: A method for manufacturing a highly reliable laminated ceramic capacitor that hardly causes an interlayer peeling phenomenon such as delamination and hardly suffers invasion of a plating solution during plating or invasion of water and moisture during use, comprising the steps of: preparing a non-fired ceramic green chip comprising at least one layer of internal electrode containing a metallic compound comprising a metal that forms a solid solution with the internal electrode, or reacts with the internal electrode to form a compound, or segregates on the internal electrode or at the periphery of the internal electrode; firing the green chip to allow the metal in the metallic compound to form a solid solution with the internal electrode, to react with the internal electrode to form a compound, or to segregate the metallic compound on the internal electrode or at the periphery of the metallic compound, thereby enhancing the adhesion between the internal electrode and the ceramic; and forming external electrodes

Abstract: A laminated ceramic electronic component using a ceramic sintered body mainly comprising CaZrO3, which can be fired in a neutral or reducing atmosphere at a low temperature and in which inner electrodes are formed using cheap base metals. The inner electrodes Ni are disposed so as to be stacked via a ceramic layer in the ceramic sintered body having a principal component of CaZrO3 and containing a MnO2 phase and a glass phase, and forming outer electrodes on the outer surfaces of the ceramic sintered body.

Abstract: A dielectric ceramic composition exhibiting a firing temperature of 1300° C. or less, a dielectric constant of 200 or more, a low loss under a high-frequency-high-voltage alternating current, high insulation resistance at high electric field strength, characteristics satisfying the B and X7R characteristics, and excellent high-temperature load properties. It contains a barium titanate solid solution and additive components, and is represented by the formula, ABO3+aR and bM, wherein ABO3 represents the barium titanate solid solution having a perovskite structure; R represents an oxide of at least one metal, M represents an oxide of at least one other metal, a and b respectively represent the molar ratios of single metal oxides and a sintering additive, wherein 0.950≦A/B (molar ratio)≦1.050, 0.12<a≦0.30, and 0.04≦b≦0.30.

Abstract: A dielectric ceramic composition of the present invention is a mixture of barium titanate as a main component whose Ba/Ti molar ratio ranging from 1.001 to 1.05 and sub components comprising, at least 0.5 to 5.0 mol of Mg in the form of MgO, 0.1 to 3.0 mol of Dy in the form of Dy2O3, 0.01 to 0.4 mol of Mn in the form of Mn3O4, 0.01 to 0.26 mol of V in the form of V2O5, 0.3 to 3.5 mol of Si in the form of SiO2 and 0.01 to 3.0 mol of Al in the form of Al2O3 per 100 mol of the barium titanate. Even when external electrodes are made of base metal such as copper or the like, a multilayer capacitor whose dielectric layers are not reduced and have high insulation resistance can be obtained by using the dielectric ceramic composition of the present invention.

Abstract: In an electroconductive paste comprising a nickel powder for use in forming internal electrodes of a laminated ceramic capacitor, particles of nickel powder contained in the electroconductive paste have an average particle size D of about 0.5 &mgr;m or less, and the crystal particle size dc of a nickel crystal contained in each particle of the nickel powder is made to be less than about 20% of the average particle size D.

Abstract: The present invention provides a new type of thin-film capacitor which is insensitive to breakdown voltages during its mounting on a printed circuit board. Said capacitor has an insulating substrate having at least two internal electrode layers which are mutually separated by means of a dielectric layer. The substrate also has two end contacts each of which are electroconductively connected to one of said internal electrode layers. According to the invention, the capacitor also has breakable electrically conductive means, preferably formed as a metal layer, which means are electrically connected to said end contacts. The presence of said breakable electrically conductive means between said end contacts prevents damage due to electrical storage which can arise during the mounting of the capacitor on a printed circuit board.

Abstract: A dielectric ceramic composition, comprised of a main component expressed by a composition formula [SrZrO3]x+[CaTiO3](1−x) wherein the “x” satisfies 1.00≧x≧0.60, and sub components such as B2O3, SiO2, ZnO, Al2O3 and Li2O. Where the amounts of B2O3, SiO2, ZnO, Al2O3 and Li2O respectively equal “a”, “b”, “c”, “d”, and “e” parts by weight with respect to 100 parts by weight of the main component, 1.80>a≧0.25, 1.80>b≧0.20, 1.80>c≧0, 1.10>d≧0, 6.30>e≧0.05 and 10.00>a+b+c+d+e≧0.50 are satisfied. The dielectric ceramic composition can be burned at 1000° C. or less and is able to be used in a multi-layer chip capacitor suitable for high frequencies capable of using Cu or Ag as an internal conductor.

Abstract: A dielectric composition containing at least calcium titanate, strontium titanate, and barium titanate, wherein at least the molar ratios of composition of the three are such that the molar ratio of composition (P) of calcium titanate is 0.5 to 0.85, the molar ratio of composition (Q) of strontium titanate is 0.05 to 0.4, and the molar ratio of composition (R) of barium titanate is 0.1 to 0.2 (where, P+Q+R=1).

Abstract: A capacitor in a semiconductor device is constituted by a lower electrode having a laminated layer including an adhesive layer formed on an insulating film, a barrier layer formed so as to cover the upper surface of the insulating layer, a nitride side formed so as to cover the side face of the adhesive layer, and an electrode layer formed so as to cover the upper surface of the barrier layer, a capacitor insulating film formed so as to cover the upper surface and side surface of the lower electrode, and an upper electrode formed so as to cover the surface of the capacitor insulating film.

Abstract: A multi-layer ceramic capacitor is made up of a laminated body in which ceramic layers and internal electrodes are laminated on one another, and external electrodes are provided at end portions of the laminated body, in which the internal electrodes extend to either one of at least a pair of edges of the ceramic layers opposing each other, thereby leading the internal electrodes to end surfaces of the laminated body opposing each other, respectively, and connecting the internal electrodes led out to the end surfaces of the laminated body to the external electrodes, respectively, whereby internal electrodes facing each other through the ceramic layers within the laminated body through the ceramic layers are formed by conductor particles lying between the ceramic layers end-to-end, along a boundary surface between the ceramic layers, continuously.

Abstract: In conjunction with the manufacture of a multilayer ceramic capacitor having nickel-containing internal electrodes involving a polishing step for exposing the end of the internal electrodes, a non-reducible dielectric ceramic material is prepared, for the purpose of preventing the polishing step from being prolonged, by furnishing a calcined material containing a compound oxide represented by the formula (I): [(CaxSr1−x)O]m[(TiyZr1−y)O2] wherein 0≦x≦1, 0≦y≦0.10, and 0.75≦m≦1.04, as a main component, adding 0.001-10 mol % based on the main component of MgO or rare earth oxide and firing the mixture. The ceramic material contains predetermined amounts of SiO2 and BaO and/or CaO, and MnO as auxiliary components.

Abstract: A non-reducing dielectric ceramic contains Ca, Zr and Ti as metallic elements and does not contain Pb. In a CuK&agr; X-ray diffraction pattern, the ratio of the maximum peak intensity of secondary crystal phases to the maximum peak intensity at 2&thgr;=25° to 35° of a perovskite primary crystal phase is about 12% or less, the secondary crystal phases including all the crystal phases other than the perovskite primary crystal phase. The non-reducing dielectric ceramic exhibits superior insulating resistance and dielectric loss after firing in a neutral or reducing atmosphere and high reliability in a high-temperature loading lifetime test and is useful for producing compact high-capacitance monolithic ceramic capacitors.

Abstract: An upper electrode of an FRAM capacitor is connected to a diffusion layer on the surface of a semiconductor substrate via a contact hole, second interconnecting layer, contact hole, first interconnecting layer, and contact hole. The first interconnecting layer is formed at substantially the same level as the FRAM capacitor. This decreases the depth of the contact hole connecting the first interconnecting layer to the surface of the semiconductor substrate and thereby decreases the aspect ratio of this contact hole. This facilitates processing and filling this contact hole and allows micropatterning.

Abstract: A dielectric ceramic composition is composed of barium titanate (BamTiO3), a rare-earth oxide (RO3/2), where the rare-earth element is at least one of Y, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm and Yb, calcium oxide and a silicon oxide. When the dielectric ceramic composition is represented by the formula 100BamTiO3+aRO3/2+bCaO+cSiO2, where coefficients 100, a, b, and c indicate moles, the relationships 0.990≦m≦1.030, 0.5≦a≦30, 0.5≦b≦30, and 0.5≦c≦30 are satisfied. A monolithic ceramic capacitor includes a plurality of dielectric ceramic layers, internal electrodes formed between the dielectric ceramic layers and external electrodes electrically connected to the internal electrodes. The dielectric ceramic layers are composed of the dielectric ceramic composition described above, and the internal electrodes are composed of a base metal as a principal constituent.

Abstract: A circuit board having coupled multilayered ceramic capacitors mounted thereon considerably reduces the generation of sounds developed by piezoelectric effects in the capacitors. A method for mounting the capacitors on the circuit board includes the step of forming lands for mounting the capacitors thereon at substantially plane-symmetrical positions on the front surface and the back surface of the circuit board, two lands at their substantially plane-symmetrical positions being connected each other. The capacitors, which are substantially identical each other, are then mounted on the lands of the front and the back surfaces such that the capacitors are disposed at substantially plane-symmetrical positions and electrically coupled to the lands.

Abstract: A ceramic capacitor has a dielectric ceramic layer and at least one pair of electrodes. The dielectric ceramic layer has a primary phase and secondary phases, and the size of the secondary phases in the thickness direction of the dielectric ceramic layer is not more than about one-third of the thickness of the dielectric ceramic layer. A method for making the ceramic capacitor includes the steps of mixing compounds constituting secondary phases in a primary phase of a dielectric ceramic, annealing and then pulverizing the mixture to prepare a raw material for the secondary phases, mixing the raw material for the secondary phases with other materials for the dielectric ceramic shaping and sintering the mixture to form a dielectric ceramic, and forming electrodes on the dielectric ceramic. The ceramic capacitor has high insulation resistance, superior load characteristics at high temperatures or high humidity and high weather resistance, even when sintered in a reducing atmosphere.

Abstract: Various mixtures of lead magnesium niobate and lead titanate are made, each mixture having a different Curie temperature, wherein these mixtures are mixed together to form capacitor inks that can be used to make capacitors embedded in multilayer ceramic circuit boards. These capacitors have extended temperature ranges of operation as well as low loss tangents and high dielectric constants.

Abstract: A monolithic ceramic electronic component includes a laminate including a plurality of ceramic layers obtained by sintering a ceramic raw material powder, and a plurality of internal electrodes located between the ceramic layers and obtained by sintering a metallic powder. The ceramic layers have a thickness of about 3 &mgr;m or less and are composed of ceramic grains having an average particle diameter of more than about 0.5 &mgr;m, the particle diameter of the ceramic grains in the thickness direction of the ceramic layers is smaller than the thickness of the ceramic layers, and the internal electrodes have a thickness of about 0.2 to 0.7 &mgr;m.

Abstract: A dielectric material comprising: a main component represented by the composition formula (1-&agr;) {(Ba1−xCaxO)A (Ti1−yZryO2)B}·&agr;L2O3, wherein 0.0005≦&agr;≦0.015, 0.03≦x≦0.15, 0.01 ≦y≦0.25, 1.00≦A/B≦1.02, L: at least one component selected from the group consisting of lanthanide; and subsidiary components including 0.01 to 1.0% by weight of MnO and 0.005 to 0.5% by weight of an oxide containing Al2O3 as a major component; and further 0.01 to 0.4 total % by weight of at least one oxide selected from the group of oxides of V, Nb, Ta, Mo and W, and a small size, large capacitance, multi-layer ceramic chip capacitor comprising said dielectric material.