Composition Patents (Class 361/321.5)
  • Patent number: 8779047
    Abstract: There is provided a coating composition comprising (A) a thermoplastic non-fluorine-containing polymer, (B) inorganic ferroelectric particles, (C) an affinity-improving agent comprising at least one of a coupling agent, a surfactant and an epoxy group-containing compound, and (D) a solvent, and there is provided a film formed using the coating composition which has highly dielectric property and low dielectric loss, can be made thin, is excellent in winding property (flexibility) and is suitable as a highly dielectric film for a film capacitor.
    Type: Grant
    Filed: July 9, 2007
    Date of Patent: July 15, 2014
    Assignee: Daikin Industries, Ltd.
    Inventors: Meiten Koh, Nobuyuki Komatsu, Kouji Yokotani, Miharu Matsumura
  • Publication number: 20140177134
    Abstract: A laminated ceramic capacitor includes a laminate including an inner layer portion including a ceramic dielectric layer and an internal electrode, and an outer layer portion defined by a ceramic dielectric layer. At both end portions of the laminate, external electrodes are connected to the internal electrode. In the outer layer portion, a glass layer is provided. An outer ceramic dielectric layer positioned outwardly of the glass layer has a different color from the color of an inner ceramic dielectric layer positioned inwardly of the glass layer.
    Type: Application
    Filed: December 13, 2013
    Publication date: June 26, 2014
    Applicant: MURATA MANUFACTURING CO., LTD.
    Inventors: Hiroki AWATA, Sui UNO, Takatoshi SUETO
  • Patent number: 8760845
    Abstract: A capacitor structure includes a storage node; a capacitor dielectric on the storage node; and a plate electrode on the capacitor dielectric. The capacitor dielectric may include a Si-doped ZrO2 layer or crystalline ZrSiOx with a Si/(Zr+Si) content ranging between 4-9% by atomic ratio. The capacitor structure further includes an interfacial TiO2/TiON layer between the storage node and the capacitor dielectric.
    Type: Grant
    Filed: February 10, 2012
    Date of Patent: June 24, 2014
    Assignee: Nanya Technology Corp.
    Inventors: Noel Rocklein, Vishwanath Bhat, Chris Carlson
  • Patent number: 8730648
    Abstract: An electrical component includes a ceramic base body. The ceramic base body includes several ceramic layers including a function layer and a composite layer bordering the function layer. The composite layer can include a zirconium oxide-glass filler mixture.
    Type: Grant
    Filed: October 20, 2006
    Date of Patent: May 20, 2014
    Assignee: Epcos AG
    Inventors: Uwe Wozniak, Thomas Feichtinger, Hermann Gruenbichler, Pavol Dudesek, Thomas Puerstinger
  • Patent number: 8724296
    Abstract: To provide a solid electrolytic capacitor having a high capacitance and an excellent heat resistance. A solid electrolytic capacitor includes: an anode 2; a dielectric layer 3 provided on the surface of the anode 2; a first conductive polymer layer 4a provided on the dielectric layer 3; a second conductive polymer layer 4b provided on the first conductive polymer layer 4a; a third conductive polymer layer 4c provided on the second conductive polymer layer 4b; and a cathode layer provided on the third conductive polymer layer 4c, wherein the first conductive polymer layer 4a is made of a conductive polymer film formed by polymerizing pyrrole or a derivative thereof, the second conductive polymer layer 4b is made of a conductive polymer film formed by polymerizing thiophene or a derivative thereof, and the third conductive polymer layer 4c is made of a conductive polymer film formed by electropolymerizing pyrrole or a derivative thereof.
    Type: Grant
    Filed: April 27, 2010
    Date of Patent: May 13, 2014
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Toru Ishikawa, Masayuki Fujita, Takeshi Sano, Gaku Harada
  • Patent number: 8713770
    Abstract: A ceramic multilayer surface-mount capacitor with inherent crack mitigation void patterning to channel flex cracks into a safe zone, thereby negating any electrical failures.
    Type: Grant
    Filed: June 29, 2011
    Date of Patent: May 6, 2014
    Assignee: Kemet Electronics Corporation
    Inventor: John D. Prymak
  • Publication number: 20140092526
    Abstract: A dielectric ceramic that contains, as its main constituent, a perovskite-type compound containing Ba and Ti, and, with respect to the Ti content of 100 parts by mole, contains Re1 (Re1 is at least one element of La and Nd) in the range of 0.15 to 3 parts by mole, Y in the range of 0.1 to 3 parts by mole, Mg in the range of 0.3 to 13 parts by mole, and Fe in the range of 0.01 to 5 parts by mole.
    Type: Application
    Filed: December 2, 2013
    Publication date: April 3, 2014
    Applicant: MURATA MANUFACTURING CO.,LTD.
    Inventors: Kazuji Kushiro, Tatsuya Ishikawa, Tomomitsu Yamanishi, Naoki Kawara
  • Publication number: 20140063690
    Abstract: A capacitor includes a dielectric layer having a first plane, a second plane opposite to the first plane, and first and second through-holes communicated with the first plane and the second plane; a first external conductor layer disposed on the first plane; a second external conductor layer disposed on the second plane; a first internal electrode formed in the first through-hole, connected to the first external electrode layer, disposed in the second hole diameter part at a tip and separated from the second external electrode layer; and a second internal electrode formed in the second through-hole, connected to the second external electrode layer, and separated from the first external electrode layer.
    Type: Application
    Filed: August 29, 2013
    Publication date: March 6, 2014
    Applicant: Taiyo Yuden Co., Ltd.
    Inventor: Hidetoshi MASUDA
  • Patent number: 8654506
    Abstract: A laminate type semiconductor ceramic capacitor with a varistor function is achieved which allows for an improvement in product yield while ensuring such insulation performance that can withstand practical use, and is suitable for mass production with a favorable ESD withstanding voltage. The semiconductor ceramic forming the semiconductor ceramic layers has a compounding molar ratio m between the Sr site and the Ti site of 0.990?m<1.000, has a donor element such as La present as a solid solution in crystal grains, has an acceptor element such as Mn present in a grain boundary layer in the range of 0.5 mol or less (preferably 0.3 mol to 0.5 mol) with respect to 100 mol of the Ti element, and has the crystal grains with an average grain size of 1.5 ?m or less.
    Type: Grant
    Filed: July 20, 2011
    Date of Patent: February 18, 2014
    Assignee: Murata Manufacturing Co., Ltd.
    Inventor: Mitsutoshi Kawamoto
  • Publication number: 20130335882
    Abstract: The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.
    Type: Application
    Filed: June 14, 2012
    Publication date: December 19, 2013
    Applicant: UCHICAGO ARGONNE, LLC.
    Inventors: Beihai Ma, Uthamalingam Balachandran, Shanshan Liu
  • Patent number: 8576537
    Abstract: A ceramic multilayer surface-mount capacitor with inherent crack mitigation void patterning to channel flex cracks into a safe zone, thereby negating any electrical failures.
    Type: Grant
    Filed: October 17, 2008
    Date of Patent: November 5, 2013
    Assignee: Kemet Electronics Corporation
    Inventor: John D. Prymak
  • Patent number: 8553391
    Abstract: In an electronic component, a laminate includes a plurality of laminated ceramic layers and a mounting surface defined by outer edges of the plurality of laminated ceramic layers, the outer edges being continuously located adjacent to each other. Capacitor conductors are disposed on the ceramic layers and include exposed portions that are exposed at the mounting surface between the ceramic layers. An electroconductive layer defining an external electrode is arranged to directly cover the exposed portions and is formed by plating so as to be made of plated material. Another electroconductive layer covers the above-mentioned electroconductive layer and partially covers surfaces of the laminate, and it is made of a material including metal and one of glass and resin.
    Type: Grant
    Filed: September 15, 2011
    Date of Patent: October 8, 2013
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Syunsuke Takeuchi, Kiyoyasu Sakurada
  • Publication number: 20130250479
    Abstract: Systems and methods in accordance with embodiments of the invention implement micro- and nanoscale capacitors that incorporate a conductive element that conforms to the shape of an array elongated bodies. In one embodiment, a capacitor that incorporates a conductive element that conforms to the shape of an array of elongated bodies includes: a first conductive element that conforms to the shape of an array of elongated bodies; a second conductive element that conforms to the shape of an array of elongated bodies; and a dielectric material disposed in between the first conductive element and the second conductive element, and thereby physically separates them.
    Type: Application
    Filed: March 14, 2013
    Publication date: September 26, 2013
    Applicant: California Institute of Technology
    Inventors: Harish Manohara, Linda Y. Del Castillo, Mohammed M. Mojarradi
  • Patent number: 8524324
    Abstract: The invention relates to a method for a complex oxide film having a high relative dielectric constant formed on a substrate surface by wet-treatment method and a production process of the complex oxide film comprising a step of washing the complex oxide film with an acid solution of pH 5 or less to thereby reduce salts in the film. Further, the invention relates to a dielectric material and a piezoelectric material containing the complex oxide film, a capacitor and a piezoelectric element including the material, and a electronic device comprising the element.
    Type: Grant
    Filed: July 28, 2006
    Date of Patent: September 3, 2013
    Assignee: Showa Denko K.K.
    Inventors: Akihiko Shirakawa, Hirofumi Fukunaga, Chunfu Yu
  • Publication number: 20130208403
    Abstract: A capacitor structure includes a storage node; a capacitor dielectric on the storage node; and a plate electrode on the capacitor dielectric. The capacitor dielectric may include a Si-doped ZrO2 layer or crystalline ZrSiOx with a Si/(Zr+Si) content ranging between 4-9% by atomic ratio. The capacitor structure further includes an interfacial TiO2/TiON layer between the storage node and the capacitor dielectric.
    Type: Application
    Filed: February 10, 2012
    Publication date: August 15, 2013
    Inventors: Noel Rocklein, Vishwanath Bhat, Chris Carlson
  • Patent number: 8508914
    Abstract: A ceramic electronic component includes a first dielectric layer, a second dielectric layer, and an intermediate layer. The first dielectric layer is a layer containing BaO, Nd2O3, and TiO2, the second dielectric layer is a layer containing a different material from the material of the first dielectric layer, and the intermediate layer is a layer formed between the first dielectric layer and the second dielectric layer and containing main components that are not contained in the first dielectric layer and the second dielectric layer in common as the main components.
    Type: Grant
    Filed: February 11, 2011
    Date of Patent: August 13, 2013
    Assignee: TDK Corporation
    Inventors: Toshio Sakurai, Hisashi Kobuke, Tomohiro Arashi, Takahiro Nakano, Yasuharu Miyauchi
  • Patent number: 8486492
    Abstract: The invention aims at providing a complex oxide film having a high relative dielectric constant and a high voltage resistance, whose film thickness can be arbitrarily controlled, and a manufacturing method thereof, a composite body comprising the complex oxide film and a manufacturing method thereof, a dielectric or piezoelectric material comprising the complex oxide film or composite body, a capacitor or piezoelectric element comprising the complex oxide film advantageous to improve voltage resistance, and an electronic device equipped with the same, without involving any complicated or large scale equipment. The complex oxide film can be obtained by forming a metal oxide film containing a titanium element on a substrate surface and then allowing a solution containing strontium ion to react with the metal oxide film. A capacitor including the complex oxide film as dielectric material and a piezoelectric element including it as piezoelectric material can be produced.
    Type: Grant
    Filed: December 27, 2006
    Date of Patent: July 16, 2013
    Assignee: Showa Denko K.K.
    Inventor: Akihiko Shirakawa
  • Patent number: 8488298
    Abstract: A dielectric ceramic capacitor that has excellent reliability and particularly excellent life characteristics in a load test even when the thickness of a dielectric ceramic layer is reduced uses a dielectric ceramic as a dielectric ceramic layer in a laminated ceramic capacitor which is a substance containing, as the main component, (Ba, R)(Ti, V)O3 or (Ba, Ca, R)(Ti, V)O3 in which R is at least one selected from La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y, and in which both V and R are present uniformly in the main component particles.
    Type: Grant
    Filed: March 15, 2011
    Date of Patent: July 16, 2013
    Assignee: Murata Manufacturing Co., Ltd.
    Inventor: Takayuki Yao
  • Patent number: 8486493
    Abstract: A complex oxide film is provided having a high relative dielectric constant and capacitance having low temperature-dependency. The film thickness can be arbitrarily controlled. A manufacturing method thereof, a composite body comprising the complex oxide film and a manufacturing method thereof are provided. The complex oxide film containing titanium element and calcium element can be obtained by forming a metal oxide film containing titanium element on a substrate surface and then allowing a solution containing calcium ion to react with the metal oxide layer. A capacitor including the complex oxide film as dielectric material and a piezoelectric element including it as piezoelectric material can be produced.
    Type: Grant
    Filed: December 27, 2006
    Date of Patent: July 16, 2013
    Assignee: Showa Denko K.K.
    Inventor: Akihiko Shirakawa
  • Patent number: 8476179
    Abstract: A grain boundary-insulated semiconductor ceramic contains a SrTiO3-based compound as a main component, and a diffusing agent containing a grain boundary insulating agent and a glass component. The grain boundary insulating agent is composed of a material free of lead, the glass component mainly contains a SiO2—X2O-MO—TiO2-based glass material that does not contain boron or lead and in which X represents an alkali metal, and M represents at least one of barium, strontium, and calcium, and the content of the glass component is 3 to 15 parts by weight relative to 100 parts by weight of the grain boundary insulating agent. A component base is composed of the grain boundary-insulated semiconductor ceramic.
    Type: Grant
    Filed: January 26, 2012
    Date of Patent: July 2, 2013
    Assignee: Murata Manufacturing Co., Ltd.
    Inventor: Tsutomu Tatekawa
  • Patent number: 8455381
    Abstract: A ceramic material composition advantageously used as a material for a ceramic substrate containing for example a resistor such as an isolator disposed therein. includes about 10 to 45 percent by weight of a BaO—TiO2—ReO3/2 ceramic composition, the ceramic composition being represented by xBaO-yTiO2-zReO3/2 (wherein x, y, and z each represent mole percent, 8?x?18, 52.5?y?65, and 20?z?40, and x+y+z=100; and Re represents a rare-earth element); about 5 to 40 percent by weight of alumina; and about 40 to 65 percent by weight of a borosilicate glass composition containing about 4 to 17.5 percent by weight of B2O3, about 28 to 50 percent by weight of SiO2, 0 to about 20 percent by weight of Al2O3, and about 36 to 50 percent by weight of MO (wherein MO represents at least one compound selected from CaO, MgO, SrO and BaO), wherein the total content of the BaO—TiO2—ReO3/2 ceramic composition and alumina is about 35 percent by weight or more.
    Type: Grant
    Filed: October 20, 2006
    Date of Patent: June 4, 2013
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Yasutaka Sugimoto, Satoshi Ohga, Takaki Murata
  • Patent number: 8446707
    Abstract: A low loss capacitance and low loss insulating dielectric material consisting of a thermosetting resin, thermoplastic resin, a cross-linker, and containing a quantity of ferroelectric ceramic nano-particles of barium titanate within. The combined low loss insulating dielectric layer and a low loss capacitive layer resulting from the material allows one continuous layer that can form internal capacitors and permit the modifying the dielectric thickness between signal layers for impedance matching within a layer of substrate. More significantly, the applied layer of low loss capacitive materials can simultaneously act as a capacitor as well as a dielectric for separation of signal layers.
    Type: Grant
    Filed: October 10, 2011
    Date of Patent: May 21, 2013
    Assignee: Endicott Interconnect Technologies, Inc.
    Inventors: Rabindra N. Das, Konstantinos I. Papathomas, Voya R. Markovich, James J. McNamara
  • Patent number: 8411412
    Abstract: A ceramic powder composition, a ceramic material and a multi-layer ceramic capacitor fabricated thereby are presented. The ceramic powder composition includes a main component and a glassy component. A content of the glassy component is 0.2 to 2.0 mole % based on the main component. The main component includes (Ba1-xCax)mTiO3+?MgO+?Re2O3+?MnO+?B2O5, where ?, ?, ? and ? are molar ratio constants, and 0.1???3.0, 0.05???3.0, 0.001???0.2, and 0.0<??0.1; 0.99?m?1.030, and 0.005?x?0.015; element Re is selected from a group consisting of yttrium (Y), chromium (Cr), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), and ytterbium (Yb); and element B is selected from a group consisting of vanadium (V), niobium (Nb), and tantalum (Ta). The glassy component includes (BayCa1-y)SiO3, where 0<y<1.
    Type: Grant
    Filed: January 14, 2011
    Date of Patent: April 2, 2013
    Assignee: Darfon Electronics Corp.
    Inventors: Yueh-Lin Chan, Ting-An Chien, Hsiu-Hsiang Pei, Chao-Kuang Hsiao
  • Patent number: 8400755
    Abstract: There is provided a dielectric ceramic composition suitable for, for example, a car-mounted monolithic ceramic capacitor used in a high-temperature environment. It is represented by the composition formula: 100(Ba1-xCax)mTiO3+aMgO+bV2O5+cSiO2+dR2O3 wherein R represents at least one metal element selected from Y, La, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, and Yb; and a, b, c, and d each represent a moles. The dielectric ceramic composition satisfying the requirements of 0.03?x?0.20, 0.99?m?1.03, 0.10?a?5.0, 0.025?b?2.5, 0.20?c?8.0, and 2.5?d<3.5. Dielectric ceramic layers in a monolithic ceramic capacitor are formed of a sintered body of the dielectric ceramic composition.
    Type: Grant
    Filed: March 23, 2011
    Date of Patent: March 19, 2013
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Jun Ikeda, Shoichiro Suzuki
  • Patent number: 8395882
    Abstract: In a dielectric ceramic having crystal grains and containing a perovskite in which the A site contains Ba and the B site contains Ti. as a main component, the crystal orientations are aligned in substantially the same direction within the crystal grains. Some of Ba may be replaced with Ca and/or Sr, and some of Ti may be replaced with Zr and/pr Hf. This achieves a dielectric ceramic which has a high dielectric constant and has favorable AC electric field characteristics in which the change in dielectric constant is small even with changes in applied electric field.
    Type: Grant
    Filed: July 27, 2010
    Date of Patent: March 12, 2013
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Hironori Suzuki, Hideyasu Onishi, Kazuo Muto, Tomoyuki Nakamura
  • Patent number: 8389374
    Abstract: The present invention is a method for producing a capacitor. The method includes applying a dielectric substance (ex.—silicon nitride) to a first gold seed layer, the first gold seed layer being formed on a wafer. A second gold seed layer is formed upon the dielectric substance and first gold seed layer. Gold is electroplated into a photoresist to form a first set of 3-D capacitor elements on the second gold seed layer. A first copper layer is electroplated onto the second gold seed layer. Gold is electroplated into a photoresist to form a second set of 3-D capacitor elements, the second set of 3-D elements being formed at least partially within the first copper layer and being connected to the first set of 3-D elements. A second copper layer is electroplated onto the first copper layer. Then, both copper layers are removed to provide (ex.—form) the capacitor.
    Type: Grant
    Filed: August 20, 2010
    Date of Patent: March 5, 2013
    Assignee: Rockwell Collins, Inc.
    Inventors: Nathan P. Lower, Mark M. Mulbrook, Robert L. Palandech
  • Patent number: 8390985
    Abstract: A highly moisture resistant dielectric ceramic is prepared by providing a compact containing a dielectric ceramic component powder and a second powder including a compound containing an alkali metal element, and firing the compact and a second composition containing an alkali metal element at the same time. A laminated ceramic capacitor using the dielectric ceramic is described.
    Type: Grant
    Filed: July 28, 2010
    Date of Patent: March 5, 2013
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Masahiro Naito, Seiichi Jono, Tomotaka Hirata
  • Patent number: 8385052
    Abstract: A capacitor containing an electrochemical cell that includes ruthenium oxide electrodes and an aqueous electrolyte containing a polyprotic acid (e.g., sulfuric acid) is provided. More specifically, the electrodes each contain a substrate that is coated with a metal oxide film formed from a combination of ruthenium oxide and inorganic oxide particles (e.g., alumina, silica, etc.). Without intending to be limited by theory, it is believed that the inorganic oxide particles may enhance proton transfer (e.g., proton generation) in the aqueous electrolyte to form hydrated inorganic oxide complexes (e.g., [Al(H2O)63+] to [Al2(H2O)8(OH2)]4+). The inorganic oxide thus acts as a catalyst to both absorb and reversibly cleave water into protons and molecular bonded hydroxyl bridges. Because the anions (e.g.
    Type: Grant
    Filed: December 10, 2008
    Date of Patent: February 26, 2013
    Assignee: AVX Corporation
    Inventors: Jessica M. Smith, Lee Shinaberger, Bob Knopsnyder, Gang Ning, Bharat Rawal, Dirk Dreissig
  • Patent number: 8373968
    Abstract: Dielectric ceramic composition includes a hexagonal type barium titanate as a main component shown by a generic formula (Ba1-?M?)A(Ti1-?Mn?)BO3 and having hexagonal structure wherein an effective ionic radius of 12-coordinated “M” is ?20% or more to +20% or less with respect to an effective ionic radius of 12-coordinated Ba2+ and the A, B, ? and ? satisfy relations of 0.900?(A/B)?1.040, 0.003???0.05, 0.03???0.2, and as subcomponents, with respect to the main component, certain contents of alkaline earth oxide such as MgO and the like, Mn3O4 and/or Cr2O3, CuO, Al2O3, rare earth element oxide and glass component including SiO2. According to the present invention, it can be provided the hexagonal type barium titanate powder and dielectric ceramic composition which are preferable for producing electronic components such as a capacitor and the like showing high specific permittivity, having advantageous insulation property and sufficient reliability.
    Type: Grant
    Filed: November 8, 2010
    Date of Patent: February 12, 2013
    Assignees: TDK Corporation, Japan Aerospace Exploration Agency
    Inventors: Tatsuya Ishii, Hidesada Natsui, Takeo Tsukada, Shinichi Yoda, Kentei Yono
  • Publication number: 20120326561
    Abstract: Provided is a laminated ceramic electronic component which has excellent mechanical characteristics, internal electrode corrosion resistance, high degree of ceramic material design freedom, low cost, low defective rate and various properties. It includes a laminate of a plurality of laminated ceramic layers and a plurality of internal electrodes at specific interfaces between ceramic layers. The internal electrodes contain an Al/Mg alloy in which the Al/Mg ratio is 65/35 or more.
    Type: Application
    Filed: September 5, 2012
    Publication date: December 27, 2012
    Applicant: MURATA MANUFACTURING CO., LTD.
    Inventors: Akihiro Shiota, Koichi Banno, Masahiro Otsuka, Shoichiro Suzuki, Taisuke Kanzaki, Masanori Nakamura
  • Patent number: 8335073
    Abstract: A dielectric ceramic composition includes, as a main component, a compound having perovskite type crystal structure shown by a general formula ABO3, as subcomponents, in terms of respective element with respect to 100 moles of the compound, and 0.6 to 2.0 moles of an oxide of Mg, 0.010 to 0.6 mole of oxide of Mn and/or Cr, 0.010 to 0.2 mole of an oxide of at least one selected from V, Mo and W, 0.10 to 1.0 mole of an oxide of R1 (R1 is at least one selected from Y, Yb, Er and Ho), 0.10 to 1.0 mole of an oxide of R2 (R2 is at least one selected from Dy, Gd and Tb) and 0.2 to 1.5 moles of a component consisting of an oxide of Ba and/or oxide of Ca and an oxide of Si. According to the present invention, even when a dielectric layer is made thinner, a dielectric ceramic composition having good characteristics can be provided.
    Type: Grant
    Filed: March 9, 2011
    Date of Patent: December 18, 2012
    Assignee: TDK Corporation
    Inventors: Kazuhiro Komatsu, Yoichiro Hoshi, Shuhei Yoshikawa, Yuichiro Sueda
  • Patent number: 8320103
    Abstract: A dielectric ceramic which is capable of achieving a laminated ceramic capacitor with high reliability, in particular, favorable lifetime characteristics in a load test, even when a dielectric ceramic layer is reduced in thickness, contains one of Ba(Ti, Mn)O3 and (Ba, Ca)(Ti, Mn)O3 as a main component, and R (La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and/or Y), M (Fe, Co, V, W, Cr, Mo, Cu, Al, and/or Mg) and Si as accessory components. The area of a region in which at least one of R and M is present is 10% or less on average on a cross section of each main component grain.
    Type: Grant
    Filed: June 22, 2010
    Date of Patent: November 27, 2012
    Assignee: Murata Manufacturing Co., Ltd.
    Inventor: Takayuki Yao
  • Patent number: 8315037
    Abstract: A dielectric ceramic which improves the lifetime characteristics and dielectric breakdown voltage of a laminated ceramic capacitor includes core-shell crystalline grains which have a core-shell structure and homogeneous crystalline grains which have a homogeneous structure. In this dielectric ceramic, the core-shell crystalline grains and the homogeneous crystalline grains are present at an area ratio in the range of 91:9 to 99:1. Preferably, when the mean grain size for the core-shell crystalline grains is represented by R1 and the mean grain size for the homogeneous crystalline grains is represented by R2, the ratio of R2/R1 is 0.8 or more and 3 or less.
    Type: Grant
    Filed: January 20, 2010
    Date of Patent: November 20, 2012
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Masanori Nakamura, Shinichi Yamaguchi, Toshikazu Takeda
  • Patent number: 8315038
    Abstract: A thin-film capacitor has a high insulation resistance value with high reliability. The thin-film capacitor includes a dielectric thin film and electrodes opposing each other through the dielectric thin film, the dielectric thin film containing a perovskite-type composite oxide having a composition expressed by (1), Mn, and at least one kind of element M selected from V, Nb, and Ta; wherein the dielectric thin film has an Mn content of 0.05 to 0.45 mol with respect to 100 mol of the composite oxide; and wherein the dielectric thin film has a total element M content of 0.05 to 0.5 mol with respect to 100 mol of the composite oxide: AyBO3??(1) where A is at least one kind of element selected from Ba, Sr, Ca, and Pb, B is at least one kind of element selected from Ti, Zr, Hf, and Sn, and 0.97?y?0.995.
    Type: Grant
    Filed: April 8, 2010
    Date of Patent: November 20, 2012
    Assignee: TDK Corporation
    Inventors: Hitoshi Saita, Naoto Tsukamoto, Akira Shibue, Kenji Horino
  • Patent number: 8305731
    Abstract: Multilayer ceramic chip capacitors (MLCC's) which satisfy X7R TCC requirements and which are compatible with silver-palladium internal electrodes. The MLCC's exhibit desirable dielectric properties—high capacitance, low dissipation factor, high insulation resistance, stable TCC—and excellent performance on highly accelerated life testing, and good resistance to dielectric breakdown. The dielectric layers include a lead-free and cadmium-free barium titanate base material doped with other metal oxides such oxides of zinc, boron, bismuth, barium, titanium, praseodymium, cerium, tungsten, neodymium, tungsten, tin, niobium, copper, and/or manganese in various combinations. The dielectric ceramic materials herein can be fired at less than 1150° C. with an inner electrode having 70 wt % or more Ag and 30 wt % or less Pd to form an MLCC.
    Type: Grant
    Filed: October 27, 2008
    Date of Patent: November 6, 2012
    Assignee: Ferro Corporation
    Inventors: Walter J. Symes, Jr., Mike S. H. Chu
  • Publication number: 20120252657
    Abstract: A dielectric ceramic composition comprises barium titanate as a main component, and as subcomponents, 1.00 to 2.50 moles of an oxide of Mg, 0.01 to 0.20 mole of an oxide of Mn and/or Cr, 0.03 to 0.15 mole of an oxide of at least one element selected from a group consisting of V, Mo and W, 0.20 to 1.50 mole of an oxide of R1 where R1 is at least one selected from a group consisting of Y and Ho, 0.20 to 1.50 mole of an oxide of R2 where R2 is at least one selected from a group consisting of Eu, Gd and Tb and 0.30 to 1.50 mole of an oxide of Si and/or B, in terms of each oxide with respect to 100 moles of the barium titanate.
    Type: Application
    Filed: March 26, 2012
    Publication date: October 4, 2012
    Applicant: TDK CORPORATION
    Inventors: Jun SATO, Fumiaki SATOH, Saori TAKEDA, Masakazu HOSONO
  • Publication number: 20120250222
    Abstract: Provided is an anti-reductive high-frequency ceramic dielectric material sintered at low temperature and matched with copper internal electrode, which can be used for producing multi-layer ceramic capacitor with a copper internal electrode. The ceramic dielectric material consists of main crystalline phase, modifying additive and sintering flux. The formula of the main crystalline phase is MgxBa(1?x)ZrySi(1?y)O3, wherein 0.8?0.95, 0.05?y?0.2. The modifying additive is one or more of MnO2, CaO, Li2O, Bi2O3 and TiO2, and the sintering flux is one or more of B2O3, SiO2, ZnO, CuO, K2O and BaO. The ceramic dielectric material meets the requirements of COG characteristics by EIA standard, has such characteristics as uniform particle size distribution, high dispersiveness, optimized molding process, eco-friendliness and excellent dielectric properties.
    Type: Application
    Filed: December 20, 2010
    Publication date: October 4, 2012
    Inventors: Beibei Song, Yongsheng Song, Fangce Mo, Juan Li, Xiaoguo Wang, Jinghua Guo
  • Patent number: 8270144
    Abstract: The present invention relates to borosilicate glass compositions for a sintering agent, dielectric compositions containing the borosilicate glass compositions and a multilayer ceramic capacitor using the dielectric compositions. Borosilicate glass compositions for a sintering agent according to an aspect of the invention include an alkali oxide, an alkaline earth oxide and a rare earth oxide, can sinter ceramic dielectrics at low temperatures and improve the hot insulation resistance of a multilayer ceramic capacitor. Correspondingly, dielectric compositions including these borosilicate glass compositions and a multilayer ceramic capacitor using the dielectric compositions can be sintered at a low temperature of 1100° C. or less and have high hot insulation resistance, thereby ensuring high levels of reliability.
    Type: Grant
    Filed: July 16, 2009
    Date of Patent: September 18, 2012
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Sung Bum Sohn, Young Tae Kim, Kang Heon Hur, Min Hee Hong, Hew Young Kim, Doo Young Kim
  • Patent number: 8264817
    Abstract: A laminated ceramic capacitor which has a dielectric ceramic with a high dielectric constant and has excellent reliability against changes in temperature and mechanical shocks, even when dielectric ceramic layers are reduced in thickness employs a dielectric ceramic containing (Ba1-xCax)yTiO3 (where 0.045?x?0.15 and 0.98?y?1.05) as its main constituent and containing Re2O3 (where Re is at least one of Gd, Dy, Ho, Yb, and Y), MgO, MnO, V2O5, and SiO2 as accessory constituents, which is represented by the general formula: 100(Ba1-xCax)yTiO3+aRe2O3+bMgO+cMnO+dV2O5+eSiO2, and satisfies each of the following conditions: 0.65?a?1.5; 0.98?y?1.05; 0.15?b?2.0; 0.4?c?1.5; 0.02?d?0.25; and 0.2?e?3.0.
    Type: Grant
    Filed: November 3, 2010
    Date of Patent: September 11, 2012
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Masanori Nakamura, Toshihiro Okamatsu, Akira Kato, Shinya Isota
  • Patent number: 8247338
    Abstract: The present invention relates to a high dielectric constant paste composition comprising (A) inorganic particles having a perovskite crystal structure or a complex perovskite crystal structure, (B) a compound represented by any one of the general formulas (1) to (4) shown below, and (C) an organic solvent. The present invention provides a high dielectric constant paste composition for producing a high dielectric constant dielectric composition which has high insulation reliability and exhibits satisfactory resistance in a high-temperature high-humidity bias test.
    Type: Grant
    Filed: January 14, 2009
    Date of Patent: August 21, 2012
    Assignee: Toray Industries, Inc
    Inventors: Yoichi Shimba, Yoshitake Hara, Tsukuru Mizuguchi, Toshihisa Nonaka
  • Patent number: 8248754
    Abstract: A dielectric ceramic contains a barium titanate and Li. In the dielectric ceramic, the following inequalities are satisfied: 0.5?e?6.0, 0.06<Rg<0.17, and ?g<0.075, where e is the content, in molar parts, of Li with respect to 100 molar parts of the titanate; Rg is the average size, in ?m, of grains in the dielectric ceramic; and ?g is the standard deviation, in ?m, of the size of the grains.
    Type: Grant
    Filed: August 13, 2009
    Date of Patent: August 21, 2012
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Tomonori Muraki, Tomoyuki Nakamura, Makoto Matsuda, Hironori Suzuki, Takehisa Sasabayashi, Masayuki Ishihara, Akihiro Shiota
  • Patent number: 8248755
    Abstract: A polyimide resin is provided. The polyimide resin comprises the reaction product of a polyimide resin and an amine comprising a C1-10 hydrocarbon substituted with CN, F, SO2, SO, S, SO3, SO3?, PO, PO2H, PO3H, PO2?, PO3?2, CO, CO2?, CO2H, CONH, CONH2, NHCOHN, OCONH, OCO2, N, NH, NH2, NO2, CSNH, CSNH2, NHCSNH, OTi(OR4)3, or OSi(OR4)3 or combinations of these, wherein R4 is a C1-10 aliphatic or aromatic hydrocarbon. The resin may be used to provide a thin film that in turn, may advantageously be used to form, wholly or in part, articles such as capacitors, sensors, batteries, flexible printed circuit boards, keyboard membranes, motor/transformer insulations, cable wrappings, industrial tapes, interior coverage materials, and the like. In particular, a capacitor comprising the thin film and methods of making the same are also provided.
    Type: Grant
    Filed: April 30, 2010
    Date of Patent: August 21, 2012
    Assignee: General Electric Company
    Inventors: Gary William Yeager, Norberto Silvi, Patricia Chapman Irwin, Robert Colin McTigue
  • Patent number: 8248753
    Abstract: A dielectric ceramic for use in dielectric ceramic layers has a main component represented by a composition formula of (Sr1-x-ySnxBay)TiO3, wherein x is 0.005?x?0.24, y is 0?y?0.25 in the composition formula. Preferably, the dielectric ceramic includes 0.01 mol to 5 mol of M (M is at least one of Mn and V) calculated as MO and/or 0.2 mol to 5 mol of Si calculated as SiO2, with respect to 100 mols of the main component, and more preferably, further includes 0.1 mol to 25 mol of Ca calculated as CaO with respect to 100 mols of the main component. The dielectric ceramic has an increased dielectric constant permitting size reduction when used in a laminated ceramic capacitor.
    Type: Grant
    Filed: December 23, 2009
    Date of Patent: August 21, 2012
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Shoichiro Suzuki, Toshikazu Takeda
  • Patent number: 8248750
    Abstract: Dielectric elastomer or electroactive polymer film transducers configured to minimize high electrical field gradients that can lead to partial discharge and corona.
    Type: Grant
    Filed: September 19, 2008
    Date of Patent: August 21, 2012
    Assignee: Bayer MaterialScience AG
    Inventors: Silmon James Biggs, Edward F. Johnson, Gordon Russell, Luther Lawford White, III
  • Patent number: 8238077
    Abstract: A dielectric ceramic exhibiting a high dielectric constant is provided. The relative dielectric constant of the dielectric ceramic is stable with respect to temperature dependence and exhibits insulation resistance having a reduced voltage dependence. The dielectric ceramic of the invention can be used to form a multilayer ceramic capacitor that has a long life.
    Type: Grant
    Filed: September 25, 2009
    Date of Patent: August 7, 2012
    Assignee: Kyocera Corporation
    Inventors: Youichi Yamazaki, Hideyuki Osuzu, Yoshihiro Fujioka, Daisuke Fukuda
  • Publication number: 20120176726
    Abstract: Dielectric materials comprising nanocrystalline or nanoparticulate metal oxides or metal carbonates having enhanced dielectric constant values are provided. Specifically, the dielectric materials exhibit high dielectric constant values at low frequencies approaching the DC limit. The dielectric materials also exhibit low dielectric loss factors and high voltage breakdown limits making them well suited for use in capacitors, particularly high energy density capacitors.
    Type: Application
    Filed: July 13, 2007
    Publication date: July 12, 2012
    Inventors: David Jones, Slawomir Winecki, Shivanee Dargar, Justin Millette
  • Patent number: 8213153
    Abstract: A dielectric ceramic with stable insulation properties even after calcination under a reducing atmosphere, as is preferred for a laminated ceramic capacitor, is a CaTiO3 composition containing Sn. It is preferable for the dielectric ceramic to contain, as its main component, (Ca1-xBaxSny)TiO3 (0?x<0.2, 0.01?y<0.2) with a solution of Sn at the B site.
    Type: Grant
    Filed: January 28, 2010
    Date of Patent: July 3, 2012
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Megumi Morita, Shoichiro Suzuki, Toshikazu Takeda, Tomomi Koga
  • Patent number: 8213154
    Abstract: A nickel oxide that is co-doped with a first alkali metal dopant and a second metal dopant may be used, for example, to form a dielectric material in an electronic device. The dielectric material may be used, for example, in a capacitor. The second metal dopant of the nickel oxide may be, for example, tin, antimony, indium, tungsten, iridium, scandium, gallium, vanadium, chromium, gold, yttrium, lanthanum, ruthenium, rhodium, molybdenum or niobium.
    Type: Grant
    Filed: January 22, 2008
    Date of Patent: July 3, 2012
    Assignee: Agency for Science, Technology and Research
    Inventors: Michael B. Sullivan, Jian Wei Zheng, Ping Wu
  • Patent number: 8208241
    Abstract: Methods of forming an oxide are disclosed and include contacting a ruthenium-containing material with a tantalum-containing precursor and contacting the ruthenium-containing material with a vapor that includes water and optionally molecular hydrogen (H2). Articles including a first crystalline tantalum pentoxide and a second crystalline tantalum pentoxide on at least a portion of the first crystalline tantalum pentoxide, wherein the first tantalum pentoxide has a crystallographic orientation that is different than the crystallographic orientation of the second crystalline tantalum pentoxide, are also disclosed.
    Type: Grant
    Filed: June 4, 2008
    Date of Patent: June 26, 2012
    Assignee: Micron Technology, Inc.
    Inventors: Vishwanath Bhat, Vassil Antonov
  • Patent number: 8203825
    Abstract: To provide a dielectric ceramics achieving a high insulation resistance even at a low applied voltage, and minimizing insulation resistance drop when the voltage is increased, and also provide a multilayer ceramic capacitor including the dielectric ceramics as a dielectric layer, and having excellent life characteristics in a high temperature load test. The dielectric ceramics has crystal grains composed mainly of barium titanate and containing vanadium, and a grain boundary phase existing between the crystal grains. The dielectric ceramics contains 0.0005 to 0.03 moles of vanadium in terms of V2O5, with respect to 1 mole of barium constituting the barium titanate. In the X-ray diffraction chart of the dielectric ceramics, the diffraction intensity of (004) plane indicating the tetragonal system of barium titanate is larger than the diffraction intensity of (400) plane indicating the cubic system of barium titanate.
    Type: Grant
    Filed: March 21, 2008
    Date of Patent: June 19, 2012
    Assignee: Kyocera Corporation
    Inventors: Yusuke Azuma, Youichi Yamazaki