Abstract: Provided is a semiconductor memory circuit excellent in long-term reliability and reading characteristics and having low current consumption. The semiconductor memory circuit includes: a first inverter; a first non-volatile memory, which is electrically writable; a second inverter; and a second non-volatile memory, the first inverter having an output connected to a source of the first non-volatile memory, the first non-volatile memory having a drain connected to an input of the second inverter, the second inverter having an output connected to a source of the second non-volatile memory, the second non-volatile memory having a drain connected to an input of the first inverter, the drain of the second non-volatile memory serving as an output of the semiconductor memory circuit.

Abstract: Non-transitory computer-readable media having information embodied therein that includes a description of an integrated circuit device. The information includes descriptions of a volatile storage die having a first addressable range of storage cells and a non-volatile storage die. The description of the non-volatile storage die having a second addressable range of storage cells that defines an overlapping region with the first addressable range of storage cells. The information also includes a description of an interface circuit coupled to the volatile and non-volatile storage die to selectively transfer data stored in the overlapping region of storage cells between the die.

Abstract: A memory cell can include at least a first programmable section coupled between a supply node and a first data node; a volatile storage circuit coupled to the first data node; and the programmable section includes a programmable transistor having a first source/drain (S/D) region shared with a first transistor, and a second S/D region shared with a second transistor; wherein the first S/D region has a different dopant diffusion profile than the second S/D region, and the programmable transistor has a charge storage structure formed between its control gate and its channel. Methods of forming such a memory cell are also disclosed.

Abstract: An integrated circuit which can be switched to a resting state and can be returned from the resting state rapidly is provided. An integrated circuit whose power consumption can be reduced without the decrease in operation speed is provided. A method for driving the integrated circuit is provided. The integrated circuit includes a first flip-flop and a second flip-flop including a nonvolatile memory circuit. In an operating state in which power is supplied, the first flip-flop retains data. In a resting state in which supply of power is stopped, the second flip-flop retains data. On transition from the operating state into the resting state, the data is transferred from the first flip-flop to the second flip-flop. On return from the resting state to the operating state, the data is transferred from the second flip-flop to the first flip-flop.

Abstract: Nonvolatile memory devices can include a floating gate on a substrate, with a first tunnel insulating film therebetween. A memory gate can be on the floating gate, with a blocking insulating film therebetween. A word line can be located at a first side of both the memory gate and the floating gate, with a second tunnel insulating film therebetween. The first side of the floating gate can protrude beyond the first side of the memory gate toward the word line.

Abstract: Techniques for providing floating body memory devices are disclosed. In one particular exemplary embodiment, the techniques may be realized as a semiconductor device comprising a floating gate, a control gate disposed over the floating gate, a body region that is electrically floating, wherein the body region is configured so that material forming the body region is contained under at least one lateral boundary of the floating gate, and a source region and a drain region adjacent the body region.

Abstract: A memory device may include a plurality of cell pairs each including insulator regions interposed between opposing sides of at least one common word line gate and first and second vertical sides formed by a spacing within at least one semiconductor material; and at least one selector gate vertically aligned with the word line gate within the spacing configured to enable first and second source regions in the first and second vertical sides, respectively; wherein when the selector gate is enabled, the first and second source regions are connected to different source diffusion regions.

Abstract: The storage device includes a volatile first memory circuit and a nonvolatile second memory circuit which includes a transistor whose channel is formed in an oxide semiconductor layer. In the case of high-frequency driving, during a period when source voltage is applied, a data signal is input to and output from the first memory circuit, and during a part of a period when source voltage is supplied, which is before the supply of the source voltage is stopped, a data signal is input to the second memory circuit. In the case of low-frequency driving, during a period when source voltage is applied, a data signal is input to the second memory circuit, the data signal input to the second memory circuit is input to the first memory circuit, and the data signal input to the first memory circuit is output.

Abstract: Memory devices and methods are described that include communication circuitry between page buffers in a memory array. Examples include communication circuitry that provide status information of page buffers that are directly adjacent to a given page buffer. The exchanged information can be used to adjust a given page buffer to compensate for effects in directly adjacent data lines that are being operated at the same time.

Abstract: The present invention provides a memory circuit in which, while the power is not supplied, a data signal that has been held in a memory section corresponding to a volatile memory can be held in a capacitor in a memory section corresponding to a nonvolatile memory. In the nonvolatile memory section, a transistor whose channel is formed in an oxide semiconductor layer allows a signal to be held in the capacitor for a long period. Thus, the memory circuit can hold a logic state (data signal) even while the power supply is stopped. A potential applied to a gate of the transistor whose channel is formed in an oxide semiconductor layer is raised by a booster circuit provided between a wiring for carrying power supply potential and the gate of the transistor, allowing a data signal to be held even by one power supply potential without malfunction.

Abstract: A cache programming method for a non-volatile memory device includes programming data for a current programming operation into a memory cell array, determining whether the current programming operation has been performed to a threshold point of program completion, and receiving a data for a next programming operation when the current programming operation has been performed to the threshold point of program completion.

Abstract: According to one embodiment, there is provided a fusion memory including a first memory cell array formed of a NAND cell unit and a second memory cell array formed of a DRAM cell on a semiconductor substrate. The NAND cell unit is formed of a non-volatile memory cell having a two-layer gate structure in which a first gate and a second gate are stacked, and a selective transistor connecting the first and second gates of the non-volatile memory cell. The DRAM cell is formed of a cell transistor having a structure same as the structure of the selective transistor, and a MOS capacitor having a structure same as the structure of the non-volatile memory cell or the selective transistor.

Abstract: An electronic device according to the present technique includes a non-volatile memory in which a program is stored, a volatile memory in which the program read from the non-volatile memory is stored, a controller part for controlling operations of the non-volatile memory and the volatile memory, and a power supply controller for controlling power to the controller part and the volatile memory. The controller part includes a power supply part and a signal fixing part. The power supply part is separated from another power supply line, and power for an interface signal of the volatile memory is supplied from the power supply part thereto. A voltage is supplied from the power supply part to the signal fixing part, and the signal fixing part fixes an output logic of the signal supplied to the volatile memory according to the signal from the power supply controller.

Abstract: An electronic device of the present technique includes a controller part for controlling operations of a non-volatile memory and a volatile memory, a power supply controller for controlling power to the controller part and the volatile memory, and a register for retaining running information about a program read from the non-volatile memory. When power is supplied to the controller part from the power supply controller and the running information about the program is not retained in the register, the controller part reads the program from the non-volatile memory and stores it in the volatile memory so as to execute the program, and retains the running information about the program in the register. When the running information about the program is retained in the register, the program is read from the volatile memory so as to be executed.

Abstract: An apparatuses and methods for inferring threshold voltage distributions associated with memory cells via interpolation. A determining soft data for a group of memory cells each programmed to one of a number of data states, wherein the soft data comprises a number of different soft data values, determining a quantity of memory cells associated with each of the different soft data values, and inferring at least a portion of a threshold voltage distribution associated with the group of memory cells via an interpolation process using the determined quantities of memory cells associated with each of the different soft data values.

Abstract: A composite, hybrid memory device including a first storage die having an array of volatile storage cells and a second storage die having an array of non-volatile storage cells disposed within an integrated circuit package. The hybrid memory device includes a shared interface circuit to receive memory access commands directed to the first storage die and the second storage die and to convey read and write data between an external data path and the first and second storage dice.

Abstract: A memory storage apparatus having a rewritable non-volatile memory module, a first circuit, a memory controller and a power management circuit is provided. The first circuit outputs a state signal and keeps the state signal in a first state when the first circuit is enabled, and then the first circuit keeps the state signal in a second state after a predetermined condition is satisfied. When the memory controller receives a first signal, the power management circuit stops supplying an output voltage to the rewritable non-volatile memory module and the memory controller. Additionally, when the memory controller is enabled, the memory controller determines whether the state signal is in the first state. If true, the memory controller performs a first procedure; and if not, the memory controller performs a second procedure.

Abstract: A hybrid memory device is provided. The hybrid memory device includes a DRAM, a non-volatile memory and a control circuit. The control circuit selects one of output data of the DRAM and output data of the non-volatile memory according to a mode selecting signal and output the selected data. The control circuit outputs data requested to be output from the DRAM when the data requested to be output is in the DRAM, and may output the data requested to be output from the non-volatile memory when the data requested to be output is in the non-volatile memory. Accordingly, the hybrid memory device has a high speed in a read and write operation, and has low power consumption.

Abstract: A nonvolatile memory system is described with novel architecture coupling nonvolatile storage memory with random access volatile memory. New commands are included to enhance the read and write performance of the memory system.

Abstract: A memory circuit includes a controlled current source coupled to an input to a nonvolatile cell, and a second controlled current source coupled to a volatile cell, the volatile cell coupled to receive current from the controlled current source via the nonvolatile cell.

Abstract: A volatile memory area includes a plurality of second memory cells, a third select transistor, and a fourth select transistor. The plurality of second memory cells are electrically connected in series, and stacked above the substrate. The third select transistor is connected to one end of the plurality of second memory cells, and connected to a second bit line. The fourth select transistor is connected to the other end of the plurality of second memory cells, and unconnected to a second source line. A controller is configured to supply a first voltage to all gates of the second memory cells. The first voltage is capable of turning on the plurality of second memory cells.

Abstract: A memory device in which data can be retained for a long time is provided. The memory device includes a memory element and a transistor which functions as a switching element for controlling supply, storage, and release of electrical charge in the memory element. The transistor includes a second gate electrode for controlling the threshold voltage in addition to a normal gate electrode. Further, the off-state current of the transistor is extremely low because an active layer thereof includes an oxide semiconductor. In the memory device, data is stored not by injection of electrical charge to a floating gate surrounded by an insulating film at high voltage but by control of the amount of electrical charge of the memory element through the transistor whose off-state current is extremely low.

Abstract: According to one embodiment, a semiconductor device includes a nonvolatile memory, a volatile memory, and a controller. The controller is configured to transition a part of the volatile memory to a self-refresh mode when a request for stopping supplying of power to the nonvolatile memory is received.

Abstract: An apparatus includes a semiconductor device that includes a multi-ported three-dimensional (3D) memory. The multi-ported 3D memory includes multiple memory cells arranged in multiple physical levels above a substrate. The multi-ported 3D memory includes circuitry associated with operation of the multiple memory cells.

Abstract: A system on chip (SoC) provides a memory array of nonvolatile bitcells. Each bit cell includes two ferroelectric capacitors connected in series between a first plate line and a second plate line, such that a node Q is formed between the two ferroelectric capacitors. The first plate line and the second plate line are configured to provide a voltage approximately equal to first voltage while the bit cell is not being accessed. A clamping circuit is coupled to the node Q and is operable to clamp the node Q to a voltage approximately equal to first voltage while the bit cell is not being accessed.

Abstract: Techniques for providing floating body memory devices are disclosed. In one particular exemplary embodiment, the techniques may be realized as a semiconductor device comprising a floating gate, a control gate disposed over the floating gate, a body region that is electrically floating, wherein the body region is configured so that material forming the body region is contained under at least one lateral boundary of the floating gate, and a source region and a drain region adjacent the body region.

Abstract: A non-volatile static random access memory (NVSRAM) device includes a volatile circuit and a non-volatile circuit. Under normal operations when an external power is supplied, the volatile circuit can provide fast data access. When the power supply is somehow interrupted, the non-volatile circuit can provide data backup using an inverter circuit and a non-volatile erasable programmable memory (NVEPM) circuit, thereby retaining data previously stored in the volatile circuit.

Abstract: The storage device includes a volatile first memory circuit and a nonvolatile second memory circuit which includes a transistor whose channel is formed in an oxide semiconductor layer. In the case of high-frequency driving, during a period when source voltage is applied, a data signal is input to and output from the first memory circuit, and during a part of a period when source voltage is supplied, which is before the supply of the source voltage is stopped, a data signal is input to the second memory circuit. In the case of low-frequency driving, during a period when source voltage is applied, a data signal is input to the second memory circuit, the data signal input to the second memory circuit is input to the first memory circuit, and the data signal input to the first memory circuit is output.

Abstract: While the supply of power is stopped, a data signal that has been held in a volatile memory section can be held in a nonvolatile memory section. In the nonvolatile memory section, a transistor having an extremely low off-state current allows a data signal to be held in the capacitor for a long period of time. Thus, the nonvolatile memory section can hold the logic state even while the supply of power is stopped. When the supply of power is started again, the data signal that has been held in the capacitor while the supply of power has been stopped is set at such a potential that malfunction does not occur by turning on the reset circuit.

Abstract: Semiconductor memory having both volatile and non-volatile modes and methods of operation. A semiconductor storage device includes a plurality of memory cells each having a floating body for storing, reading and writing data as volatile memory. The device includes a floating gate or trapping layer for storing data as non-volatile memory, the device operating as volatile memory when power is applied to the device, and the device storing data from the volatile memory as non-volatile memory when power to the device is interrupted.

Abstract: A semiconductor device has a non-volatile memory cell including a write transistor which includes an oxide semiconductor and has small leakage current in an off state between a source and a drain, a read transistor including a semiconductor material different from that of the write transistor, and a capacitor. Data is written or rewritten to the memory cell by turning on the write transistor and applying a potential to a node where one of a source electrode and drain electrode of the write transistor, one electrode of the capacitor, and a gate electrode of the read transistor are electrically connected to one another, and then turning off the write transistor so that the predetermined amount of charge is held in the node.

Abstract: Provided is a nonvolatile memory device including a common source. The device includes a first active region crossing a second active region, a common source disposed in the second active region, and a source conductive line disposed on the common source in parallel to the common source. The source conductive line is electrically connected to the common source.

Abstract: The present invention provides a memory circuit in which, while the power is not supplied, a data signal that has been held in a memory section corresponding to a volatile memory can be held in a capacitor in a memory section corresponding to a nonvolatile memory. In the nonvolatile memory section, a transistor whose channel is formed in an oxide semiconductor layer allows a signal to be held in the capacitor for a long period. Thus, the memory circuit can hold a logic state (data signal) even while the power supply is stopped. A potential applied to a gate of the transistor whose channel is formed in an oxide semiconductor layer is raised by a booster circuit provided between a wiring for carrying power supply potential and the gate of the transistor, allowing a data signal to be held even by one power supply potential without malfunction.

Abstract: A hybrid solid-state memory system is provided for storing data. The solid-state memory system comprises a volatile solid-state memory, a non-volatile solid-state memory, and a memory controller. Further, a method is provided for storing data in the solid-state memory system. The method comprises the following steps. A write command is received by the memory controller. Write data is stored in the volatile memory in response to the write command. Data is transferred from the volatile memory to the non-volatile memory in response to a data transfer request.

Abstract: A method of operation of a non-volatile dynamic random access memory system including: accessing a dynamic random access memory; managing a delay-locked-loop control in the dynamic random access memory; sourcing timing inputs to the dynamic random access memory by a control logic unit with the delay-locked-loop control disabled including: selecting a back-up interface through a first multiplexer and a second multiplexer, asserting an on-board termination, and accessing data in the dynamic random access memory by the control logic unit at a lower frequency; and enabling a memory control interface by the control logic unit, with the delay-locked-loop control enabled including: selecting a host interface through the first multiplexer, the second multiplexer, or a combination thereof, disabling the on-board termination, and accessing the data in the dynamic random access memory by the memory control interface at a delay-locked-loop frequency.

Abstract: A memory includes at least one first flag cell configured to store first flag data, at least one second flag cell configured to store second flag data, at least one first sensing node having a voltage level determined by the first flag data of the first flag cell, at least one second sensing having a voltage level determined by the second flag data of the second flag cell, a selection circuit configured to select the first sensing node or the second sensing node in response to a flag address; and a determination circuit having an internal node through which current corresponding to a voltage level of a selected sensing node flows and configured to determine a logic value of flag data corresponding to the selected sensing node among the first and second flag data by using an amount of current flowing through the internal node.

Abstract: Data storage circuits are connected to the bit lines in a one-to-one correspondence. A write circuit writes the data on a first page into a plurality of 5 first memory cells selected simultaneously by a word line. Thereafter, the write circuit writes the data on a second page into the plurality of first memory cell. Then, the write circuit writes the data on the first and second pages into second memory cells adjoining 10 the first memory cells in the bit line direction.

Abstract: A storage device includes a control device that controls an access to storage, a volatile memory that stores data that is used for operation control of the control device, and a non-volatile memory is a backup destination of the data. Furthermore a storage device includes a detection unit that detects a failure occurred in the control device, a determination unit that determines whether or not backup data that is stored in the non-volatile memory is valid when the detection unit detects the failure occurred in the control device, and a control unit that causes the control device to execute a first processing of restoring the backup data of the non-volatile memory in the volatile memory after restart-up without backup of the data of the volatile memory, when the determination unit determines that the backup data of the non-volatile memory is valid.

Abstract: A RECALL process in a memory circuit includes RECALLing the state of a volatile memory cell from a nonvolatile memory cell, and inverting an output of the volatile memory cell after every other RECALL.

Abstract: The present invention discloses two preferred embodiments of a 12 T NVSRAM cell with a flash-based Charger and a pseudo 10 T NVSRAM cell with one shared Flash-based Charger. The Flash-based Charger can be made of a 2-poly floating-gate type or a 1-poly charge-trapping SONOS/MONOS flash type, regardless of PMOS type or NMOS type. In an alternative embodiment, the Store operation of above two preferred NVSRAM cell use a DRAM-like charge-sensing scheme with Flash cell configured into a voltage follower associated with Flash Charger and 2-step SRAM amplification technique to amplify the threshold level difference ?Vt stored in the paired Flash transistors. The ?Vt can be detected as low as 1V when the coupled charges through the Flash charger are sufficient by ramping a gate control of the Flash Charger as high as VPP or by increasing the channel length for the Flash Charger.

Abstract: The present invention discloses a 10T NVSRAM cell with a 6T SRAM cell with 4T Flash cell with one dedicated Flash-based Charger. In addition, a Pseudo-8T NVSRAM cell with a shared Flash-based Charger between two adjacent 8T NVSRAM cells at top and bottom in cell layout is also disclosed to further reduce cell size by 20%. As opposed to the prior art of 12T NVSRAM cell, the Store operation of the above two preferred embodiments use a DRAM-like charge-sensing scheme with Flash cell configured into a voltage follower ensured by the Flash-based Charger to obtain the final ?VQ-QB>0.2V at Q and QB nodes of each SRAM cell to cover all the mismatched of parasitic capacitance in flash cell devices and layout for a reliable amplification by ramping up SRAM's VDD line and ramping down SRAM's VSS line.

Abstract: One or more embodiments of 8T NVSRAM cell are provided for improving NVSRAM memory architecture with reduced cell size as opposed to the prior art of 12T NVSRAM cell. This novel 8T NVSRAM cell uses one step Write operation under either a FN-channel write scheme to increase a paired flash transistor Vt values in positive direction with a desired ?Vt12?1V or a FN-edge write scheme to decrease the Vt values in negative direction with a similar desired ?Vt12?1V to write the ?Vt12 into the paired flash transistors within 1-10 ms without requiring a pre-erase step. There is no need of Program-Inhibit Voltage (SBPI) to inhibit non-select flash transistor from programming. In addition, this 8T NVSRAM cell uses DRAM-like charge-sensing scheme to detect the ?V on Q and QB nodes of SRAM in which is coupled and generated from the ?Vt12 stored in MC1 and MC2 flash transistors.

Abstract: The invention provides a block selection method for a flash memory. First, a flash memory is divided into a plurality of great block groups. Each of the great block groups is then divided into a plurality of block groups. Scores corresponding to the blocks of the flash memory are then recorded in a score table. When the score of a target block selected from the blocks of the flash memory has been amended, the amended score of the target block is compared with a first extreme value and a second extreme value corresponding to the block group and the great block group comprising the target block and the total extreme value. A victim block is then determined from the blocks of the flash memory according to an extreme value table.

Abstract: One of objects is to provide a nonvolatile memory device in which the occurrence of a defect in data writing is suppressed and whose area can be suppressed, or a semiconductor device including the nonvolatile memory device. A first memory portion including a nonvolatile memory element and a second memory portion (data buffer) for temporarily storing data in verifying operation in which whether the data is correctly written into the first memory portion is verified are provided. Further, the second memory portion includes a memory element and an insulated gate field effect transistor for controlling the holding of charge in the memory element; the off-state current or the leakage current of the transistor is extremely low.

Abstract: A 10T NVSRAM cell is provided with a bottom HV NMOS Select transistor in each 3T FString removed from traditional 12T NVSRAM cell. A Recall operation by reading a stored ?Vt state of flash transistors into each SRAM cell uses a charge-sensing scheme rather than the current-sensing scheme, with all other key operations unchanged. The Recall operation works under any ramping rate of SRAM's power line voltage and Flash gate signal which can be set higher than only Vt0 or both Vt0 and Vt1. Alternatively, the Store operation can use a current charging scheme from a Fpower line to the paired Q and QB nodes of each SRAM cell through a paired Flash Voltage Follower that stored ?Vtp?1.0V. The Recall operation in this alternative embodiment is to use a 7-step approach with the FN-channel erase, FN-channel program and FN-edge program schemes, including 2-step SRAM amplification.

Abstract: An integrated circuit which can be switched to a resting state and can be returned from the resting state rapidly is provided. An integrated circuit whose power consumption can be reduced without the decrease in operation speed is provided. A method for driving the integrated circuit is provided. The integrated circuit includes a first flip-flop and a second flip-flop including a nonvolatile memory circuit. In an operating state in which power is supplied, the first flip-flop retains data. In a resting state in which supply of power is stopped, the second flip-flop retains data. On transition from the operating state into the resting state, the data is transferred from the first flip-flop to the second flip-flop. On return from the resting state to the operating state, the data is transferred from the second flip-flop to the first flip-flop.

Abstract: Silicon-oxide-nitride-oxide-silicon SONOS-type devices (or BE-SONOS) fabricated in Silicon-On-Insulator (SOI) technology for nonvolatile implementations. An ultra-thin tunnel oxide can be implemented providing for very fast program/erase operations, supported by refresh operations as used in classical DRAM technology. The memory arrays are arranged in divided bit line architectures. A gate injection, DRAM cell is described with no tunnel oxide.

Abstract: According to one embodiment, a nonvolatile semiconductor memory includes a source line connected to first and second cell units, a cell-source driver setting the source line on a fixed potential in a programming, a data latch circuit temporary storing program data, a hookup circuit connecting one of the first and second bit lines to the data latch circuit, and connecting the other one of the first and second bit lines to the source line, in the programming, a level detection circuit detecting a potential level of the source line, and a control circuit determining a completion of a charge of the first and second bit lines when the potential level of the source line is larger than a threshold value, and making a charge time of the first and second bit lines variable, in the programming.

Abstract: Two on-chip capacitors including one HV capacitor VPPcap and one LV VCC capacitor VCCcap are built over a NVSRAM memory chip as a back-up second power supplies for each NVSRAM cell, regardless of 1-poly, 2-poly, PMOS or NMOS flash cell structures therein. The on-chip HV and LV capacitors are preferably made from one or more MIM or MIP layers for achieving required capacitance. A simplified VCC power system circuit without a need of a State machine designed for performing only one NVSRAM Program operation without Erase operations is proposed for initiating NVSRAM's Auto-Store operation without using any off-chip Vbat and Vcap. During the Auto-Store operation, all HV pumps and oscillators associated with the two on-chip capacitors are shut off once VCC voltage drop is detected by a VCC detector to be below 80% of regular VDD level.

Abstract: A semiconductor integrated circuit device with reduced consumption current is provided. A first step-down circuit stationarily forms internal voltage lower than supply voltage supplied through an external terminal. A second step-down circuit is switched between first mode and second mode according to control signals. In first mode, the internal voltage is formed from the supply voltage supplied through the external terminal and is outputted through a second output terminal. In second mode, operating current for a control system that forms the internal voltage is interrupted and an output high impedance state is established. The first output terminal of the first step-down circuit and the second output terminal of the second step-down circuit are connected in common, and the internal voltage is supplied to internal circuits.