Abstract: A fuse circuit that permits a fuse to be selected and programmed using a single fuse pad. The fuse circuit includes a fuse pad to receive a first voltage, a fuse coupled in series with a voltage controlled switch between the fuse pad and a reference node, and a switch control circuit coupled in series between the fuse pad and the reference node and in parallel with the fuse and the voltage controlled switch, the switch control circuit being configured to select and program the fuse responsive to the first voltage received at the fuse pad. The fuse pad may subsequently be grounded and a sense circuit may be coupled to the fuse to measure a voltage dropped across the fuse to determine whether the fuse has been programmed.

Abstract: A storage device for performing a read operation together with a program operation includes a memory device for storing data and a memory controller for controlling the memory device. The memory device includes an allow bit setting register for storing allow bits which are compared with fail bits included in read data read in a read operation and includes a read operation controller for controlling the memory device to immediately perform the read operation after a program operation. The memory controller includes a command generator for generating a command instructing the memory device to perform an operation, includes a bad block processor for setting a bad block, based on a result of the read operation performed by the memory device, and includes a fail information controller for setting an operation mode of a next read operation, based on the result of the read operation performed by the memory device.

Abstract: A memory apparatus and method of operation is provided. The apparatus includes a block having memory cells connected to word lines and arranged in strings and is divided into a first sub-block and a second sub-block each configured to be erased as a whole in an erase operation. The apparatus has a temperature measuring circuit configured to detect an ambient temperature of the apparatus. A control circuit is configured to determine a word line inhibit voltage based on the ambient temperature. The control circuit applies an erase voltage to each of the strings while simultaneously applying a word line erase voltage to the word lines associated with a selected one of the first and second sub-blocks to encourage erasing and the word line inhibit voltage to the word lines associated with an unselected one of the first and second sub-blocks to discourage erasing in the erase operation.

Abstract: A method for performing memory access of a Flash cell of a Flash memory includes: performing a first sensing operation corresponding to a first sensing voltage to generate a first digital value of the Flash cell; according to a result of the first sensing operation, performing a plurality of second sensing operations to generate a second digital value of the Flash cell representing at least one candidate threshold voltage of the Flash cell; determining the threshold voltage of the memory Flash cell according to the at least one candidate threshold voltage; determining soft information of a bit stored in the Flash cell according to the threshold voltage of the Flash cell; and using the soft information to perform soft decoding.

Abstract: Devices and methods for sensing a memory cell are described. The memory cell may include a ferroelectric memory cell. During a read operation, a first switching component may selectively couple a sense component with the memory cell based on a logic state stored on the memory cell to transfer a charge between the memory cell and the sense component. A second switching component, which may be coupled with the first switching component, may down convert a voltage associated with the charge to another voltage that is within an operation voltage of the sense component. The sense component may operate at a lower voltage than a voltage at which the memory cell operates to reduce power consumption in some cases.

Abstract: A memory system includes: a storage device including a plurality pages for storing data; and a memory controller configured to determine, when sudden power-off occurs, whether there is a high probability of a program disturb of unselected pages sharing a word line coupled to a selected page among the pages in rebooting, and output a command to perform an over-write operation for programming data in the selected page or skip the over-write operation, based on a result of the determination.

Abstract: In a method of writing data in a nonvolatile memory device including a plurality of cell strings, each of the plurality of cell strings includes a plurality of memory cells disposed in a vertical direction. A program target page is divided into a plurality of subpages. The program target page is connected to one of a plurality of wordlines. Each of the plurality of subpages includes memory cells that are physically spaced apart from one another. A program operation is sequentially performed on the plurality of subpages. A program verification operation is performed on the program target page including the plurality of subpages at a time.

Abstract: A shared floating gate device, the device including an nFET, a pFET including a different material than that of the nFET, and a floating gate.

Abstract: Devices and methods of forming a device are disclosed. The device includes a substrate defined with at least a device region. A multi-gate transistor disposed in the device region which includes first and second gates both having first and second gate sidewalls. The multi-gate transistor also includes first source/drain (S/D) regions disposed adjacent to the first gate sidewall of the first and second gate, a common second S/D region disposed adjacent to the second gate sidewall of the first and second gate. A negative capacitance element is disposed within the second gate to reduce total overlap capacitance of the transistor. An interlevel dielectric (ILD) layer is disposed over the substrate and covering the transistor. First and second contacts are disposed in the ILD layer which are coupled to the first and second S/D regions respectively.

Abstract: A system that may reliably erase a storage device, such as a solid state drive. The system issues an erasure command to the storage device. Such a command may be issued over a bus connecting a processing unit to one or more storage devices to be erased. The system, including the storage device, may be prepared for the erasure operation via performing one or more operations. Those operations may include: using hardware of the system to initiate a hard reset of the storage device; preventing access to the storage device while the erasure operation is being performed; and/or erasing hidden areas on the storage device. The system may be configured to perform the hard reset and may be configured not to alter a command to perform secure erase. Further, the erasure process may include writing a signature to certain areas of the storage device to confirm that erasure was performed.

Abstract: Techniques for suppression of program disturb in flash memory devices are described herein. In an example embodiment, a method for suppression of program disturb in a flash memory array is provided. The flash memory array comprises rows and columns of memory cells, where the memory cells in each row are coupled to a source line and to a select-gate (SG) line, and the memory cells in each column are coupled to a respective bit line (BL). During a program memory operation, a first voltage, of a selected SG line, and a second voltage, of an unselected BL, are regulated independently of a power supply voltage of the flash memory array, where the first voltage is regulated in a first range of 0.9V to 1.1V and the second voltage is regulated in a second range of 0.4V to 1.2V.

Abstract: A semiconductor memory system comprising: a memory device including a plurality of data cells; a read/write circuit suitable for performing a write operation to a target data cell among the data cells; and a state transition recognition circuit suitable for detecting a state transition of the target data cell, and ending the write operation according to the detection result of the state transition of the target data cell.

Abstract: Discussed herein are systems and methods for protecting against transistor degradation in a high-voltage (HV) shifter to transfer an input voltage to an access line, such as a global wordline. An embodiment of a memory device comprises memory cells and a HV shifter circuit that includes a signal transfer circuit, and first and second HV control circuits. The signal transfer circuit includes a P-channel transistor to transfer a high-voltage input to an access line. The first HV control circuit couples a bias voltage to the P-channel transistor for a first time period, and the second HV control circuit couples a stress-relief signal to the P-channel transistor for a second time period, after the first time period, to reduce degradation of the P-channel transistor. The transferred high voltage can be used to charge the access line to selectively read, program, or erase memory cells.

Abstract: A semiconductor device including: a first memory section, a first peripheral circuit section, and a second peripheral circuit section that are disposed next to each other on a substrate; and a second memory section laterally spaced apart from the first memory section, the second peripheral circuit section and the second memory section disposed next to each other on the substrate, wherein the first memory section includes a plurality of first memory cells, each of the first memory cells including a cell transistor and a capacitor connected to the cell transistor, and the second memory section includes a plurality of second memory cells, each of the second memory cells including a variable resistance element and a select element coupled in series to each other, wherein the second memory cells are higher from the substrate than each of the capacitors.

Abstract: Apparatuses, systems, methods, and computer program products are disclosed for distributed program operation. One apparatus includes a non-volatile storage controller that identifies a threshold number of bit flips that can be corrected in an amount of read data and a memory die comprising a plurality of non-volatile memory cells. Here, the memory die receives the threshold number of bit flips from the non-volatile storage controller, programs data to a set of the non-volatile memory cells over a first number of program loop cycles, and programs the data to the set of non-volatile memory cells over an additional number of program loop cycles in response to the amount of bit flips in the set of memory cells exceeding the threshold number of bit flips.

Abstract: A memory device and method of erasing same that includes a substrate of semiconductor material and a plurality of memory cells formed on the substrate and arranged in an array of rows and columns. Each of the memory cells includes spaced apart source and drain regions in the substrate, with a channel region in the substrate extending there between, a floating gate disposed over and insulated from a first portion of the channel region which is adjacent the source region, a select gate disposed over and insulated from a second portion of the channel region which is adjacent the drain region, and a program-erase gate disposed over and insulated from the source region. The program-erase gate lines alone or in combination with the select gate lines, or the source lines, are arranged in the column direction so that each memory cell can be individually programmed, read and erased.

Abstract: A test control circuit includes a test mode generation circuit. The test mode generation circuit may be configured to generate, while in a fast access mode, a fast test mode signal based on information included in one of a plurality of mode signals and a fast set signal. The test mode generation circuit may be configured to generate, while in a normal mode, a normal test mode signal based on information included in two or more mode signals from the plurality of mode signals and a normal set signal.

Abstract: Provided herein is a fail bit counter. The fail bit counter includes a pass/fail data receiver receiving pass/fail data indicating whether memory cells coupled to a bit line sequentially pass or fail, and a fail bit accumulator receiving a fail bit generation signal from the pass/fail data receiver, and accumulating and counting fail bits which are generated.

Abstract: Techniques for suppression of program disturb in flash memory devices are described herein. In an example embodiment, an apparatus comprises a flash memory device coupled to a microprocessor. The flash memory device comprises rows and columns of memory cells, where the memory cells in each row are coupled to a source line and to a select-gate (SG) line, and the memory cells in each column are coupled to a respective bit line (BL). A control circuit in the flash memory device is configured to regulate both a first voltage, of a selected SG line, and a second voltage, of an unselected BL, independently of a power supply voltage of the flash memory device, and to adjust at least one of the first voltage and the second voltage based on a measure of an operating temperature of the flash memory device.

Abstract: A non-volatile memory includes a first memory cell. The first memory cell includes five transistors and a first capacitor. The first transistor includes a first gate, a first terminal and a second terminal. The second transistor includes a second gate, a third terminal and a fourth terminal. The third transistor includes a third gate, a fifth terminal and a sixth terminal. The fourth transistor includes a fourth gate, a seventh terminal and an eighth terminal. The fifth transistor includes a fifth gate, a ninth terminal and a tenth terminal. The first capacitor is connected between the third gate and a control line. The third gate is a floating gate. The second terminal is connected with the third terminal. The fourth terminal is connected with the fifth terminal. The sixth terminal is connected with the seventh terminal. The eighth terminal is connected with the ninth terminal.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a gate stack over the semiconductor substrate. The gate stack includes a first insulating layer, a charge trapping structure, a second insulating layer, and a gate electrode. The first insulating layer separates the semiconductor substrate from the charge trapping structure. The charge trapping structure is between the first insulating layer and the second insulating layer. The gate electrode is over the second insulating layer. The charge trapping structure includes a first layer and a second layer. The first layer includes zinc oxide, tin dioxide, titanium oxide, zinc tin oxide, indium oxide, indium zinc oxide, indium gallium zinc oxide, zinc oxynitride, tin oxynitride, titanium oxynitride, zinc tin oxynitride, indium oxynitride, indium zinc oxynitride, or indium gallium zinc oxynitride.

Abstract: A semiconductor memory device is disclosed that can differentially control a driving ability and current consumption of the charge pump circuit according to operation state information of other memory die. The semiconductor memory device includes a plurality of charge pump circuits installed on a plurality of memory dies, and a pump managing circuit installed on each of the memory dies to control the charge pump circuits and receive operation state information with respect to other memory die to generate control signals for controlling the charge pump circuits on its own memory die.

Abstract: A circuit having a Resistive Random Access Memory (RRAM) cell coupled between a supply voltage and a sense node; a first transistor coupled between the sense node and a source voltage; and a sub-circuit configured to have a sense voltage at the sense node be lower than a bias voltage at the gate of the first transistor.

Abstract: According to one embodiment, a data storage device includes a controller driven by a first power supply voltage, a nonvolatile memory controlled by the controller and driven by a second power supply voltage, and a switch element determining whether the second power supply voltage is applied to the nonvolatile memory. The controller is configured to turn off the switch element in a first mode and turn on the switch element in a second mode.

Abstract: Performances of a semiconductor device are improved. The semiconductor device has: a gate electrode formed on an SOI layer of an SOI substrate via a gate insulating film having a charge storage film therein; an n-type semiconductor region and a p-type semiconductor region respectively formed on SOI layers on both sides of the gate electrode. A memory cell MC serving as a non-volatile memory cell is formed of the gate insulating film, the gate electrode, the n-type semiconductor region and the p-type semiconductor region.

Abstract: Disclosed herein are processes and structures for uniform STI recessing. A method of making a semiconductor device includes initially forming a dense region of at least two fins on a substrate. The fins have a hard mask layer on a surface. The dense region with the fins is adjacent to an isolated region without fins within a distance of a pitch of the fins. An oxide is deposited on the dense and isolated regions. The oxide is polished, stopping on the hard mask layer on the fins, and removing more oxide in the isolated region. Polishing results in forming a non-uniform oxide surface. The hard mask layer is removed from the fins. An etch process is performed to further recess the oxide in the dense and isolated regions, such that a thickness of the oxide in the dense region and the isolated region is substantially uniform.

Abstract: There is provided a structure and a method of manufacturing a semiconductor package. The method includes disposing a first semiconductor device and through mold ball connectors (TMBCs) on a first surface of an interconnection structure layer, recessing a molding layer on the first surface of the interconnection structure layer to expose a portion of each of the TMBCs, attaching outer connectors to the exposed portions of the TMBCs, and mounting a second semiconductor device on a second surface of the interconnection structure layer opposite to the molding layer.

Abstract: Some embodiments include apparatuses and methods having a conductive line, a memory cell string including memory cells located in different levels the apparatus, and a select circuit including a select transistor and a coupling component coupled between the conductive line and the memory cell string. Other embodiments including additional apparatuses and methods are described.

Abstract: An OTP (One-Time Programmable) memory including OTP memory cells that utilize OTP elements fabricated in CMOS FinFET processes. The OTP memory cell can also include at least one selector built upon at least one fin structure that has at least one CMOS gate to divide the fin structure into at least a first and a second active region. The selector can be implemented as a MOS device, dummy-gate diode, or Schottky diode as selector such as by using different types of source/drain implants. The OTP element that can be implemented as polysilicon, silicided polysilicon, CMOS metal gate, any layers of metal as interconnect, or active region. In one embodiment, the OTP element can be a fin structure and can be built upon the same fin structure as the at least one of the selector. By using different source/drain implant schemes on the two active regions, the selector can be turned on as MOS device, MOS device and/or diode, dummy-gate diode, or Schottky diode.

Abstract: A memory system includes a semiconductor memory device having memory cells arranged in rows and columns, and a controller configured to issue a write command with or without a partial page program command to the semiconductor memory device. The semiconductor memory device, in response to the write command issued without the partial page command, executes a first program operation on a page of memory cells and then a first verify operation on the memory cells of the page using a first verify voltage for all of the memory cells of the page, and in response to the write command issued with the partial page command, executes a second program operation on a subset of the memory cells of the page and then a second verify operation on the memory cells of the subset using one of several different second verify voltages corresponding to the subset.

Abstract: According to one embodiment, a data storage device includes a controller driven by a first power supply voltage, a nonvolatile memory controlled by the controller and driven by a second power supply voltage, and a switch element determining whether the second power supply voltage is applied to the nonvolatile memory. The controller is configured to turn off the switch element in a first mode and turn on the switch element in a second mode.

Abstract: Methods for controlling a ramp rate of an output voltage derived from one or more charge pumps and reducing variation in the ramp rate due to process, voltage, and temperature (PVT) variations are described. In some embodiments, the ramp rate of the output voltage from one or more charge pumps may be controlled using a ramp rate control circuit that uses a digital counter to adjust (or step up) the output voltage from the one or more charge pumps based on a ramp rate schedule. The ramp rate schedule may specify varying output voltage levels for the one or more charge pumps during a time period in which the output voltage charges up from a first voltage to a second voltage greater than the first voltage.

Abstract: A method for determining an optimal voltage pulse for programming a flash memory cell, the optimal voltage pulse being defined by a voltage ramp from a non-zero initial voltage level during a programming duration, wherein the method takes into account a set of parameters including a programming window target value and a drain current target value of the memory cell.

Abstract: There are provided a semiconductor memory device and an operating method thereof. A semiconductor memory device includes a memory cell array including a plurality of memory cells connected between a source select transistor and a drain select transistor, a peripheral circuit for performing a program operation on the memory cell array, and a control logic for controlling the peripheral circuit such that the potential level of a source control voltage applied to the source select transistor as a selected memory cell is closer to the drain select transistor in a program verify operation during the program operation.

Abstract: Methods are provided for programming multi-level non-volatile memory cells, the multi-level non-volatile memory cells accessible by a plurality of word lines. The methods include using a four-pass programming technique to program a block of the multi-level non-volatile memory cells, detecting a power cycle before completing programming of the block of the multi-level non-volatile memory cells, and upon power-up initialization, resuming programming on the block of the multi-level non-volatile memory cells.

Abstract: A method of forming an OTPROM capable of storing twice the number of bits as a conventional OTPROM without increasing the overall size of the device is provided. Embodiments include forming a OTPROM, the OTPROM array having a plurality of formed devices; receiving a binary code to program the OTPROM array; separating the binary code into a first part and a second part; programming each device with one of four data storage states by: forming a gate oxide layer of each device to a thickness corresponding to the first part of the binary code, and selectively applying a TDDB stress to the gate oxide layer corresponding to the second part of the binary code; detecting a Idsat level discharged by each device with a multi-bit sense amplifier; and reading the state of each device based on the detected Idsat level.

Abstract: A logic embedded nonvolatile memory device is provided which includes a first erase gate line for erasing a plurality of first memory cells; a second erase gate line electrically separated from the first erase gate line and for erasing a plurality of second memory cells; a global erase gate line supplied with an erase voltage; and an erase gate selection switch formed between the first memory cells and the second memory cells, wherein the erase gate selection switch connects the global erase gate line to the first erase gate line or the second erase gate line according to an erase control signal.

Abstract: An improved control gate decoding design may reduce disturbances during the programming of flash memory cells. In one embodiment, a control gate line decoder is coupled to a first control gate line associated with a row of flash memory cells in a first sector and to a second control gate line associated with a row of flash memory cells in a second sector.

Abstract: The storage layer such as a nitride layer of a nonvolatile memory cell has two storage parts storing separately addressable data, typically respectively proximate to the source terminal and the drain terminal. The applied drain voltage while sensing the data of one of the storage parts depends on the data stored at the other storage part; the different parts can be in different, neighboring memory cells. If the data stored at the other storage part is represented by a threshold voltage exceeding a minimum threshold voltage, then the applied drain voltage is raised. This technology is useful in read operations and program verify operations to widen the threshold voltage window.

Abstract: Controllers, interfaces, memory devices, methods and systems are disclosed, including a controller configured to interface with a separate memory device and perform an iterative write operation to program a selected memory cell of the memory device to a target state, wherein each iteration of the write operation is configured to successively change a physical state of the selected memory cell. Other controllers, interfaces, memory device, methods and systems are also described, such as those where either a controller or a memory device can throttle a data communication operation, and/or those that utilize customized programming pulses.

Abstract: A method for programming memory cells of a selected word line has steps of: providing a first word line programming signal being at plurality of voltage levels in different programming slots of a current programming operation to the memory cells of the selected word line, wherein the first word line programming signal is a ramping voltage signal; and providing a second line programming signal being at plurality of voltage levels in different programming slots of a next programming operation to the memory cells of the selected word line, wherein the second word line programming signal is another one ramping voltage signal; wherein the highest voltage levels of the first and second word line programming signals are identical to each other, and a number of the voltage levels of the first word line programming signal is larger than that of the second word line programming signal.

Abstract: Nonvolatile memory devices utilize vertically-stacked strings of nonvolatile memory cells (e.g., NAND-type strings) that can be selectively coupled to common source lines within a substrate. This selective coupling may be provided by lateral ground select transistors having different threshold voltages that account for different lateral spacings between the vertically-stacked strings of nonvolatile memory cells and the common source lines.

Abstract: Techniques are provided for reducing program disturb in a 3D memory device. The techniques include compensating for a temperature dependence of program disturb. The techniques may include compensating for how program disturb depends on the location of the word line that is selected for programming. In one aspect, the voltage that is applied to the control gates drain side select transistors of unselected NAND strings is adjusted during programming based on temperature. Greater temperature compensation may be applied when the selected word line is closer to the drain side select transistors.

Abstract: When applying a programming voltage at one end of a word line of a non-volatile memory circuit, if the word line has a large RC constant the far end of the word line will not rise as fast as the driven end, which can adversely affect device performance. To more quickly raise the voltage on the selected word line, a voltage kick is applied to non-selected word lines, such as dummy word lines, by way of a non-selected sub-block of the selected block. The channel of NAND strings in the non-selected sub-block is used to transfer the kick to the far end of the selected word line of the selected sub-block.

Abstract: A semiconductor memory storage device includes first and second doped regions of a first type disposed in a semiconductor substrate. The first and second doped regions of the first type being laterally spaced from one another. A gate dielectric extends over the semiconductor substrate between the first and second doped regions, and a floating gate is disposed on the gate dielectric. An ultraviolet (UV) light blocking material is vertically disposed above the floating gate and has a size that covers the floating gate such that the floating gate remains electrically charged after the semiconductor memory storage device is exposed to UV light.

Abstract: The present invention provides a tunneling field effect transistor and a method for fabricating the same which refer to a field effect transistor logic device and circuit in a CMOS ultra-large integrated circuit (ULSI). The inventive concept of the invention lies in that, in a case of an N-type transistor, a side portion of a doped source region adjacent to an edge of the control gate is further implanted with P+ impurities on a basis of the doped source region being initially doped N? impurities, so that the initial N? impurities in the implanted portion are completely compensated by the P+ impurities, and in a case of a P-type transistor, a side portion of the doped source region adjacent to an edge of the control gate is implanted with N+ impurities on a basis of the doped source region being initially doped P? impurities, so that the initial P? impurities in the implanted portion are completely compensated by the N+ impurities.

Abstract: Selecting an array from among a plurality of arrays in a memory as a reference array. An exemplary method includes evaluating memory cells within the reference array to select a first reference cell associated with a first operation of the memory, and repeating the evaluating and the selecting to select a second reference cell from within the reference array, the second reference cell being associated with a second operation of the memory.

Abstract: The present invention provides an OTP memory having higher confidentiality. A memory cell has a memory transistor forming a current path between first and second nodes, a selection transistor forming a current path between third and fourth nodes, the third node being coupled to the gate of the memory transistor via a line, and a capacitor coupled to the first node. By applying high voltage which does not break but deteriorates a gate oxide film and increases gate leak current to a memory transistor, data is written. Data can be read by the presence/absence of leak of charges accumulated in the capacitor. Since the position of deterioration in the gate oxide film cannot be discriminated by a physical analysis, confidentiality is high.

Abstract: Apparatus, systems, and methods may operate to receive an external erase command at a control circuit coupled to an erasable memory array located on a substrate. A global select gate voltage may thereafter be enabled for application to wordline transistors coupled to the erasable memory array after a voltage applied to the substrate has reached a preselected initiation voltage level between about zero volts and an ultimate erase voltage.

Abstract: An apparatus includes a storage transistor. The storage transistor includes a floating gate configured to store electrical charge and a control gate. The floating gate is coupled to the control gate via capacitive coupling. The floating gate and the control gate are metal. The apparatus also includes an access transistor coupled to the storage transistor. A gate of the access transistor is coupled to a word line. The storage transistor and the access transistor are serially coupled between a bit line and a source line.