Abstract: A memory device has a burst length “b”, performs “k” core accesses per command, and receives a command, where “b” is an integer of at least 2 and “k” is an integer of at least 2 and at most “b”. The memory device includes a memory cell array including a plurality of bank groups, a plurality of bank group control units respectively corresponding to the plurality of bank groups, each of the bank group control units configured to generate a multiplexer control signal for selecting part of data read from a corresponding bank group, and a multiplexer configured to sequentially output data read from the plurality of bank groups according to the multiplexer control signal output from the plurality of bank group control units. Data items included in output data of the multiplexer have a same time space.

Abstract: An apparatus includes an array of pixels, each pixel including in-cell pixel logic and a piezoelectric micromechanical ultrasonic transducer (PMUT) element, each in-cell pixel logic being communicatively coupled with at least one adjacent pixel in the array. Transceiver electronics may operate the array in a selectable one of a first mode and a second mode. In the first mode, the array may generate a substantially plane ultrasonic wave. In the second mode, the array may generate, from at least one superpixel region, a focused beam of relatively high acoustic pressure, each superpixel region including at least one inner pixel disposed in a central portion of the superpixel region and at least a first group of outer pixels disposed in an outer portion of the superpixel region. The transceiver electronics may be configured to operate the array by configuring at least one in-cell pixel logic.

Abstract: A nonvolatile random access memory including a memory cell array including banks, each bank including rows; an address latch circuit; and a control circuit receiving a first set of signals including a precharge command and a first row address, and a second set of signals including an active command and a second row address. The control circuit executes a first operation in which one of the banks is deactivated when the first set of signals is loaded, executes a second operation in which the first row address is loaded when the first set of signals is loaded, and executes a third operation in which at least one of the rows in the bank is selected and activated based on the second row address when the second set of signals is loaded after the first set of signals.

Abstract: A word line voltage generator circuit, a semiconductor device, and an electronic device are provided. The word line voltage generator circuit includes a switch circuit connected to a high-level signal and a low-level signal and configured to output the high-level signal or the low-level signal as a word line voltage signal based on an input signal, and a drive signal control circuit configured to provide a drive signal connected to the switch circuit in response to the input signal. A voltage rising speed of the word line voltage signal is controlled by the drive signal.

Abstract: A data driver includes a first data voltage generator, a data converter and a second data voltage generator. The first data voltage generator is configured to generate a first data voltage based on first pixel data and configured to output the first data voltage to a first data line, the first pixel data being generated based on a first gamma curve. The data converter is configured to convert second pixel data to first converted pixel data, the second pixel data being generated based on the first gamma curve, the first converted pixel data being generated based on a second gamma curve different from the first gamma curve. The second data voltage generator is configured to generate a second data voltage based on the first converted pixel data and configured to output the second data voltage to a second data line.

Abstract: Apparatuses and methods for controlling word lines and sense amplifiers in a semiconductor device are described. An example apparatus includes: a sub word line selection signal decoder which activates at least one of a plurality of sub word selection signals responsive to row address signals; a column segment selection signal decoder which activates at least one of a plurality of column segment signals responsive to a portion of column address signals and a portion of the row address signals; a column segment selection circuit which activates at least one of a plurality of column-subword selection signals responsive to the activated column segment signal and the activated sub word selection signal; and a sub word line driver which activates at least one of a plurality of sub word lines responsive to an activated main word line and the activated sub word selection signal.

Abstract: An address decoder circuit is designed to address and bias memory cells of a memory array of a non-volatile memory device. The address decoder circuit includes a charge-pump stage configured to generate a boosted negative voltage. A control stage is operatively coupled to the charge-pump stage for controlling switching on/off thereof as a function of a configuration signal that determines the value of the boosted negative voltage. A decoding stage is configured so as to decode address signals received at its input and generate biasing signals for addressing and biasing the memory cells. A negative voltage management module has a regulator stage, designed to receive the boosted negative voltage from the charge-pump stage and generate a regulated negative voltage for the decoding stage, having a lower ripple as compared to the boosted negative voltage generated by the charge-pump stage.

Abstract: The present disclosure describes a system, a circuit, and method for process and temperature compensation in an integrated circuit. For example, the system includes a bus, a data latch, and a voltage generator. The data latch includes a plurality of transistors coupled to the bus. The voltage generator includes a tracking transistor with one or more physical characteristics that substantially match one or more respective physical characteristics—e.g., gate width and gate length dimensions—of at least one of the plurality of transistors in the data latch. The voltage generator is configured to adjust a pre-charged voltage on the bus based on an electrical characteristic of the tracking transistor.

Abstract: A precharge control device includes a pulse generator, a bank address controller, and a precharge signal generator. The pulse generator generates a write precharge signal in response to a write burst end signal activated after a write burst operation and a read precharge signal in response to a read burst end signal activated after a read burst operation. The bank address controller generates a write address and a read address designating an address for the precharge operation in response to a write bank address and a read bank address. The precharge signal generator generates a precharge signal for performing the precharge operation in a bank selected in response to the write address when the write precharge signal is activated, or generates a precharge signal for performing the precharge operation in a bank selected in response to the read address when the read precharge signal is activated.

Abstract: A method of controlling a wordline by a driver decoder circuit includes generating a first control signal having a first logically high level and a first logically low level, and generating a second control signal having a second logically high level when the first control signal has the first logically high level and a second logically low level when the first control signal has the first logically low level. The first logically high level is different from the second logically high level, and the first logically low level is different from the second logically low level. The method includes coupling the wordline to a first node having a first voltage value in response to the first control signal having the first logically low level and decoupling the wordline from a second node having a second voltage value in response to the second control signal having the second logically low level.

Abstract: The present disclosure includes data shift apparatuses and methods. An example apparatus includes a memory device. The example memory device includes an array of memory cells and sensing circuitry coupled to the array via a plurality of sense lines. A first shared input/output (I/O) line is configured to selectably couple a first subset of the plurality of sense lines and a second shared I/O line is configured to selectably couple a second subset of the plurality of sense lines. A shift element is configured to selectably couple the first shared I/O line to the second shared I/O line to enable a data shift operation. A controller is configured to direct selectable coupling of the array, the sensing circuitry, and the shift element to enable a shift of a data value from the first shared I/O line to the second shared I/O line.

Abstract: An example ternary content addressable memory. A bit cell of the memory may include a first memristor that has a first terminal that is connected to a first data line and a second terminal that is selectively connected to a second data line via a first switching transistor. The bit cell may also include a second memristor that has a first terminal that is connected to a third data line and a second terminal that is selectively connected to a fourth data line via a second switching transistor. The bit cell may also include a first match-line transistor and a second match-line transistor that are connected in series between a first rail and a match line, with a gate of the first match-line transistor being connected to the second terminal of the first memristor, and a gate of the second match-line transistor being connected to the second terminal of the second memristor.

Abstract: A CMOS device is formed in an FDSOI integrated circuit die. By retrieving the MOS functionality for gate voltage levels higher than its stress limits, second gate availability in these devices is being used, and hence removing the additional circuitry that would have been used for protecting the devices from such stress. Implementation in an inverter includes a PMOS transistor and an NMOS transistor. The PMOS and NMOS transistors each include a first gate coupled to the respective source terminal of the transistor. The PMOS and NMOS transistors each include a back gate coupled to the input of the inverter.

Abstract: An embodiment relates to a device for a memory access, the device having a first component for conducting operations on the memory and a second component for accessing the memory in a randomized manner, wherein the first component conducts at least a portion of the operations via the second component.

Abstract: A memory apparatus includes an array of bit cells arranged in rows and columns, multiple pairs of complementary bit lines, multiple power lines, and multiple voltage control circuits. Each column of the array is selectable by a corresponding pair of complementary bit lines. Each power line is coupled to the bit cells in a corresponding column. The voltage control circuits are coupled to respective columns of the array. Each voltage control circuit is configured to set a voltage level of a respective one of the power lines responsive to logic levels of the pair of complementary bit lines corresponding to the respective column.

Abstract: The present disclosure relates to a pre-charge circuit including a first inverter which receives an early pre-charge signal and outputs an inverted early pre-charge signal, a first gate which receives a late pre-charge signal and a match line output signal and outputs an AND output signal, and a second gate which receives the inverted early pre-charge signal and the AND output signal and outputs an effective pre-charge signal.

Abstract: A semiconductor device includes an information signal conversion circuit suitable for generating a flag signal from an external control signal in response to an information signal, and an implicit precharge signal generation circuit suitable for generating an implicit precharge signal for performing a precharge operation between successive active operations, in response to the flag signal.

Abstract: A nonvolatile memory device includes a memory cell, a bit line, a page buffer, and a control logic. The page buffer is connected to the memory cell through the bit line and the page buffer is configured to precharge the bit line to perform a desired operation. The desired operation may be one of a read operation and a verify operation. The control logic is configured to control bit line development time differently according to a temperature after precharging the bit line during the desired operation. The control logic is configured to determine the bit line development time according to a period of a reference clock signal that includes a different frequency depending on the temperature and/or a temperature compensation pulse signal including a pulse width that varies based on the temperature.

Abstract: Apparatuses and methods for charging a global access line prior to accessing a memory are described. An example apparatus may include a memory array of a memory. A plurality of global access lines may be associated with the memory array. The global access line may be charged to a ready-access voltage before any access command has been received by the memory. The global access line may be maintained at the ready-access voltage during memory access operations until the receipt of a post-access command. The post-access command may reset the global access line to an inactive voltage.

Abstract: The present invention discloses a replica bit-line circuit, comprising a replica unit, the 1st inverter, the 2nd inverter, the 3rd inverter, the 4th inverter, the 5th inverter, the 6th inverter, the 7th inverter, the 8th inverter, the 9th inverter, the 1st NAND gate, the 2nd NAND gate, the 3rd NAND gate, the 1st NOR gate, the 2nd NOR gate and the 1st PMOS tube; the 2nd NOR gate is provided with the 1st input terminal, the 2nd input terminal, a set terminal and an output terminal; advantages of the present invention are stated as follows: It can inhibit feedback oscillation incurred by replica bit-line and replica wordline signal to obtain accurate wordline control signal; it can save switching power consumption of memory array by 53.7% under the power voltage of 1.2V.

Abstract: A semiconductor device includes: a sense amplifier; a branched line selectively connectable to the sense amplifier; a recycling arrangement selectively connectable to the branched line; an array of bit lines connected to corresponding memory cells; a multiplexer configured to selectively connect the branched line to a selected one of the memory cells through a corresponding line amongst the array of bit lines; and a controller. The controller is configured to: permit, during a recovery phase in which a gleaned amount of charge (gleaned charge) is recovered, flow of charge (charge-flow) between the recycling arrangement and the branched line; interrupt, during a drainage phase in which the gleaned charge is preserved, charge-flow between the recycling arrangement and the branched line; and permit, during a reuse phase in which the gleaned charge is reused, charge-flow between the recycling arrangement and the branched line.

Abstract: An integrated circuit system includes a first integrated circuit for which signal modes set to a plurality of first I/O ports in the active mode are maintained in the sleep mode and a second integrated circuit for which a plurality of second I/O ports are placed in a floating state in the sleep mode, wherein the first integrated circuit transmits a first notification signal that indicates an operation mode to the second integrated circuit, wherein the second integrated circuit transmits a second notification signal that indicates an operation mode to the first integrated circuit, and wherein the signal modes of the plurality of first I/O ports and the plurality of second I/O ports are set such as to suppress steady currents persistently flowing between the first I/O ports and the second I/O ports, and to suppress through currents flowing.

Abstract: A nonvolatile memory includes a memory cell array, a row decoder circuit, and a page buffer circuit. The row decoder circuit applies a turn-on voltage to string selection lines, which are connected to string selection transistors of a selected memory block, at a first precharge operation in response to a write command received from an external device. The page buffer circuit applies, in response to the write command, a first voltage to bit lines, which are connected to the string selection transistors, through a first precharge circuit at the first precharge operation regardless of loaded data and applies the first voltage and a second voltage to the bit lines through a second precharge circuit at a second precharge operation based on the loaded data. During the first precharge operation, write data is loaded onto the page buffer circuit.

Abstract: A semiconductor memory apparatus may include a memory cell circuit, a data latch circuit, and a first stage amplification circuit. The data latch circuit may be electrically coupled to the memory cell circuit by a bit line. The data latch circuit may latch data transferred through the bit line. The data latch circuit may output latched data to an input/output line in response to a cell select signal. The data first stage amplification circuit may generate driving data to a voltage level of an external power supply voltage in response to a voltage level of the input/output line. The data first stage amplification circuit may precharge the input/output line to a voltage level lower than the external power supply voltage and higher than a ground voltage in response to a precharge signal.

Abstract: A semiconductor device includes a word line coupled to a mask ROM memory cell, a bit line pair coupled to the memory cell, a differential sense amplifier for amplifying the potential difference of the bit line pair, and a logic circuit for detecting whether the logic states of the bit line pair match or not. In this way, when there is a failure in the memory cell, it is possible to prevent the semiconductor device from passing the test as a result of the determination that the actual value is the same as the expected value in the test even if there is no potential difference in the bit line pair.

Abstract: A memory circuit includes a memory cell, a data line configured to be coupled with the memory cell, a node, a precharge circuit, a first transistor of a first type, and a second transistor of the first type. The precharge circuit is configured to charge the node toward a predetermined voltage level. The first transistor of the first type has a drain coupled with the node and a source coupled with the data line, and the first transistor has a first threshold voltage. The second transistor of the first type has a drain coupled with the node and a source coupled with the data line, and the second transistor having a second threshold voltage different from the first threshold voltage.

Abstract: A read-amplifier circuit includes a core with a first input and a second input that are intended to receive in a measurement phase a differential signal arising from a first bit line and from a second bit line of the memory device. The circuit also includes a memory element with two inverters coupled in a crossed manner. The first and second inputs are respectively connected to two of the power supply nodes of the inverters via two transfer capacitors. A first controllable circuit is configured to temporarily render the memory element floating during an initial phase preceding the measurement phase and during the measurement phase.

Abstract: Provided herein are a power-on reset circuit and a semiconductor memory device including the same. The power-on reset circuit may include: a voltage dividing circuit suitable for dividing an external power supply voltage to output a reference voltage, an output node control circuit suitable for controlling a potential level of an output node to an external power supply voltage level or a ground power supply voltage level in response to the reference voltage, and a buffer circuit suitable for buffering the potential level of the output node to output a power-on reset signal. In the voltage dividing circuit, a potential level of the reference voltage in a power up period is different from a potential level of the reference voltage in a power down period.

Abstract: A memory device includes a first line coupled to a first terminal of a first memory cell, a second bit line coupled to a first terminal of a second memory cell, a sense amplifier coupled to a second end of the first bit line and a second end of the second bit line, a capacitor including a first terminal coupled to a first input of the sense amplifier and a second terminal coupled to a switch. The switch couples the second terminal of the capacitor to the second bit line during a calibration phase of a read operation and to the first bit line during a sense phase of the read operation. A current/voltage source drives current on the first bit line while the second line is floating during the calibration phase, and drives current on the second bit line while the first bit line is floating during the sense phase.

Abstract: A memory includes a first memory cell; and a second memory cell. A selectable current path is coupled between the first memory cell and the second memory cell. The selectable current path includes a first transistor. A first amplifier is coupled in a first feedback arrangement between the first memory cell and the first transistor. During a read operation of the first memory cell, a current through the first memory cell is substantially equal to a current through the second memory cell. The memory cell may include a magnetic tunnel junction (MTJ).

Abstract: A method of optimizing the number of output stages of a switched mode power supply features a dynamically-updated lookup table (LUT) storing historic output stage configuration data per system operating performance point (OPP). Upon entering an OPP, a margin is added to the historic optimal configuration. During operation at the OPP, the current drawn by the load is periodically monitored, and the number of output stages is dynamically adjusted, as needed (with low pass filtering to ensure stability). When the system exits the OPP, a running average of the optimal number of output stages for the OPP is updated with the actual number of output stages enabled in this iteration of the OPP. A running average of the deviation, or change in number of output stages enabled, is also maintained. The updated values are written to the LUT, for use in setting the initial output stage configuration the next time the same OPP is invoked.

Abstract: A control apparatus which controls an access to a memory acquires, for the access to the memory, a predetermined address corresponding to the order of addresses at which the memory is accessed, and determines whether the predetermined address is identical to the target address of the access. In a case where the predetermined address is identical to the target address, the control apparatus controls the access to the memory so as to perform page close after the end of the access to the target address.

Abstract: A device is disclosed that includes memory cells, a reference circuit, and a sensing unit. Each of the memory cells is configured to store bit data. The reference circuit includes reference switches and reference storage units. The reference switches are disposed. A first reference storage unit of the reference storage units is configured to generate a first signal having a first logic state when a first reference switch the reference switches is turned on. A second reference storage unit of the reference storage units is configured to generate a second signal having a second logic state when a second reference switch of the reference switches is turned on. The sensing unit is configured to determine a logic state of the bit data of one of the memory cells according to the first signal and the second signal.

Abstract: Some implementations provide techniques and arrangements for adjusting a rate at which operations are performed by a processor based on a comparison of a first indication of power consumed by the processor as a result of performing a first set of operations and a second indication of power consumed by the processor as a result of performing a second set of operations. The rate at which operations are performed by the processor may be adjusted when the comparison indicates that a difference between the first indication of power consumed by the processor and the second indication of power consumed by the processor is greater than a threshold value.

Abstract: A semiconductor memory device may include: a plurality of memory mats; and a plurality of sense amplifier arrays arranged alternately with the memory mats, each sense amplifier array being suitable for sensing and amplifying data of memory mats adjacent thereto, wherein during a data sensing operation to a memory mat among the plurality of memory mats, in addition to a sense amplifier for the memory mat and sense amplifiers positioned immediately above and below the sense amplifier for the memory mat, at least one additional sense amplifier closest to the sense amplifier for the memory mat is also activated for providing additional amplification.

Abstract: A bank control circuit includes an implicit signal generation unit suitable for activating an implicit signal when a first active signal corresponding to a bank which is in an activated state bank, among a plurality of banks; and a delay unit suitable for delaying the implicit signal by a predetermined time, wherein the bank corresponding to the first active signal is precharged based on the implicit signal and activated again based on the delayed implicit signal.

Abstract: Read-assist circuits for memory bit cells employing a P-type Field-Effect Transistor (PFET) read port(s) are disclosed. Related memory systems and methods are also disclosed. It has been observed that as node technology is scaled down in size, PFET drive current (i.e., drive strength) exceeds N-type FET (NFET) drive current for like-dimensioned FETs. In this regard, in one aspect, it is desired to provide memory bit cells having PFET read ports, as opposed to NFET read ports, to increase memory read times to the memory bit cells, and thus improve memory read performance. To mitigate or avoid a read disturb condition that could otherwise occur when reading the memory bit cell, read-assist circuits are provided for memory bit cells having PFET read ports.

Abstract: A static random access memory (SRAM) features reduced write cycle power consumption. The SRAM includes an array of static storage cells and a write controller. The array of static storage cells is accessible via a plurality of word lines and a plurality of bit lines, and is arranged to access multiple bits via each of the word lines. The write controller controls writing to the static storage cells. The write controller is configured to perform consecutive writes to a plurality of addresses associated with a same one of the word lines, and to, in conjunction with the consecutive writes, perform fewer precharges of the bit lines than consecutive writes.

Abstract: Some embodiments include apparatuses and methods to select a target memory portion in a first memory location to store information. One such method can conditionally store the information in a second memory location when the information is stored in the target memory portion. Other embodiments are described.

Abstract: A memory device includes: a memory array comprising a plurality of bits, wherein a first bit of the plurality of bits is coupled to a first assist circuit; a test engine, coupled to the memory array, and configured to examine whether each bit is functional; and an assist circuit trimming (ACT) circuit, coupled to the memory array and the test engine, and in response to the examination, configured to selectively activate the first assist circuit.

Abstract: A bitline structure for use in a memory device may be connected to a plurality of bit memory cells. The bitline may be segmented into segments connected to one-third of the plurality of bit memory cells and two-thirds of the bit memory cells, respectively. The segments may be electrically coupled to each other to provide an overall bitline output.

Abstract: A circuit includes a first driver to provide a first driver signal at an output. The first driver signal corresponds to a voltage operatively coupled to a VSS terminal of the first driver when driving a logic low. A first capacitor includes a first terminal coupled to the VSS terminal of the first driver. A boost circuit includes a first input coupled to the output of the first driver and a first output coupled to a second terminal of the first capacitor. The boost circuit is configured to cause the first capacitor to provide a boosted voltage at the VSS terminal.

Abstract: According to one embodiment, an amplifier includes a first inverter which inverts and delays a first signal to generate a second signal. A second inverter inverts and delays a third signal to generate a fourth signal. A first transistor includes a gate electrode supplied with the second signal. A second transistor includes a gate electrode supplied with the fourth signal. An output terminal is coupled to one terminal of the second transistor and outputs a fifth signal. A third inverter inverts and delays the fifth signal to generate a sixth signal. A first discharge circuit discharges one terminal of the first transistor and the one terminal of the second transistor based on the first, sixth, or fourth signal, and includes one terminal coupled to the other terminal of each of the first and second transistors.

Abstract: A technique for reducing power consumption of a content addressable memory (CAM) system is provided. In a CAM system, an equalizer circuit is coupled to a border portion between a plurality of match line parts generated by dividing each match line corresponding to a piece of entry data, and a precharge circuit precharges each of the match line parts collectively corresponding to a piece of entry data to voltage VDD or VSS. When comparing the entry data and search data, the equalizer circuit couples, in accordance with a control signal, the match line parts after the match line parts are precharged by the precharge circuit. In an equalization period, search operation through the search line is started. A search transistor for comparing search data and entry data includes an NMOS search transistor.

Abstract: Mechanisms are described by which link state “path” information can be collected from networks and shared with external components, such as routers or centralized controllers or path computation elements, using an exterior gateway protocol, such as the Border Gateway Protocol. That is, the link state information for multiple interior gateway protocol (IGP) routing domains is shared between external components using the exterior gateway protocol, such as BGP. As such, the techniques described herein allow link state information to be shared across different routing domains, such as routing and reachability information shared between different autonomous systems. The extensions described herein allow an exterior gateway protocol to be used to signal explicit path segments within IPG routing domains so as to set up an overall path that spans the multiple IPG routing domains.

Abstract: A complementary lateral bipolar SRAM device and method of operating. The device includes: a first set and second set of lateral bipolar transistors forming a respective first inverter device and second inverter device, the first and second inverter devices being cross-coupled for storing a logic state. In each said first and second set, a first bipolar transistor is an PNP type bipolar transistor, and a second bipolar transistor is an NPN type bipolar transistor, each said NPN type bipolar transistor having a base terminal, a first emitter terminal, a second emitter terminal, and a collector terminal. Emitter terminals of the PNP type transistors of each first and second inverter devices are electrically coupled together and receive a first applied wordline voltage. The first emitter terminals of each said NPN transistors of said first inverter and second inverter devices are electrically coupled together and receive a second applied voltage.

Abstract: A sense amplifier includes a first input circuit, a second input circuit and an amplification circuit. The first input circuit may receive a pair of first input signals and change voltage levels of amplification nodes. The second input circuit may receive a pair of second input signals and change voltage levels of the amplification nodes. The amplification circuit may receive a first voltage, amplify voltage level changes of the amplification nodes, and output a pair of output signals through output nodes.

Abstract: A charge pump design suitable for generating high voltages employs multiple low voltage capacitors and low voltage transfer switches, with a limited number of high voltage devices. This is designed such that during a first clock phase, capacitors are each connected between an input voltage and ground and, during a second clock phase all the capacitors are connected in series to generate the required voltage. Both the switches (PMOS) and as well the capacitors are realized as low voltage devices. The ability to use low voltage devices can significantly reduce the area and also a reduction in current consumption relative to the usual high voltage charge pumps which uses high voltage devices.

Abstract: Power supplies for electronic devices (e.g., portable ultrasound devices) are disclosed herein. In one embodiment, a stack of batteries and one or more switches between the batteries can change a voltage provided to a terminal that is connectable to a load. A charge pump comprising a number of capacitors are connected by switches. In one configuration, the switches are set so that each capacitor is charged from a common voltage source. In another mode, the switches are connected such that capacitors can be connected in series to provide a multiple of the charging voltage to the load.

Abstract: A semiconductor memory device includes a charge storage element, a read transistor, and a write transistor. The charge storage element is for preserving a first data voltage. The read transistor has a first terminal coupled to the charge storage element, a second terminal coupled to a read bit line, and a control terminal coupled to a read word line. The write transistor has a first terminal coupled to the first terminal of the read transistor, a second terminal coupled to a write bit line, and a control terminal coupled to a write word line. The semiconductor memory device is able to perform a read operation and a write operation to the charge storage element simultaneously through the read transistor and the write transistor.