Abstract: A non-volatile memory device can include a plurality of immediately adjacent offset vertical NAND channels that are electrically coupled to a single upper select gate line or to a single lower select gate line of the non-volatile memory device.

Abstract: The presently claimed invention manages memory in a multi-processor system. The presently claimed invention may use a combination of global and local locks when allocating memory and de-allocating memory in a multi-processor system. A method consistent with the presently claimed invention may first receive an allocation of a first memory space in the system memory of a multi-core processing system. The allocation of the first memory space may globally locks the first memory space where the memory space may administered by a software module using one or more local locks.

Abstract: A first portion of an asymmetric memory is configured as temporary storage for application data units with sizes corresponding to a small memory block that is smaller than the size of a logical write unit associated with the asymmetric memory. A portion of the remaining asymmetric memory is configured as a reconciled storage for application data units with varying sizes. A first application data unit is received for writing to the asymmetric memory. Based on computing the size of the first application data unit as corresponding to the small memory block, the first application data unit is written to the temporary storage. Upon determining that a threshold is reached, a memory write operation is performed for writing the application data units from the temporary storage to the reconciled storage. The application data units written to the reconciled storage are removed from the temporary storage.

Abstract: A multi-processor includes a pool of processors and a common packet buffer memory. Bytes of packet data of a packet are stored in the packet buffer memory. Each of the processors has an intelligent packet data register file. One processor is tasked with processing the packet data, and its packet data register file caches a subset of the bytes of packet data. Some instructions when executed require that the packet data register file supply the execute stage of the processor with certain bytes of the packet data. If during instruction execution the intelligent packet data register file determines that it does not store some of the necessary bytes, then the register file asserts a stall signal thereby stalling the processor, and retrieves the bytes from the packet buffer memory, and then supplies the retrieved bytes to the execute stage, and de-asserts the stall signal to unstall the processor.

Abstract: A method for transmitting and receiving data between a micro processing unit (MPU) and a memory operating with different operating voltages in a programmable logic controller (PLC) is provided. In one embodiment, the method includes outputting, by the MPU, a chip select (CS) signal and an address signal to read requested data from the memory, outputting, by an OR gate, an activation signal for activating a data input buffer, the OR gate receiving the CS signal and the address signal, and outputting, by an access signal output buffer, a memory access signal for operation of the memory, the access signal output buffer receiving the CS signal and the address signal. The method further includes outputting the requested data to the data input buffer, and outputting, by the data input buffer, the requested data to the MPU when the requested data is received by the data input buffer from the memory.

Abstract: A semiconductor device includes a 3-input NAND decoder having six MOS transistors arranged in a line. The MOS transistors of the decoder are formed in a planar silicon layer disposed on a substrate and each have a structure in which a drain, a gate, and a source are arranged vertically and the gate surrounds a silicon pillar. The planar silicon layer includes a first active region having a first conductivity type and a second active region having a second conductivity type. The first and second active regions are connected to each other via a silicon layer on a surface of the planar silicon layer.

Abstract: An electronic device includes a semiconductor memory device. The semiconductor memory device includes: a word line driving unit for driving a plurality of word lines; a first circuit area including a first cell array arranged at one side of the word line driving unit; a second circuit area including a second cell array arranged at the other side of the word line driving unit; a bias voltage generation unit arranged between the first cell array and the second cell array; a first read control unit; and a second read control unit. The first and second cell arrays include storage cells having variable resistance elements, and the bias voltage generation unit generates a bias voltage based on currents flowing through a first reference resistance element included in the first cell array and a second reference resistance element included in the second cell array.

Abstract: A computer, serving as a high-density server, includes a substrate, a plurality of connectors each including a plurality of electrodes, and a plurality of modules detachably attached to the substrate via connectors. The modules are attached to the connectors via different combinations of electrodes such that a first module (e.g. a CPU) is attached to one connector via a first combination of electrodes while a second module (e.g. a storage module or an attachment module) is attached to another connector via a second combination of electrodes. The connectors are aligned in a first direction on the substrate or in an array defined by first and second directions perpendicular to each other, wherein the connectors are selectively and electrically connected together with electrodes.

Abstract: Sensing techniques and associated circuitry are provided for use with a memory device. The techniques are suited for sensing operations involving even-numbered or odd-numbered bit lines. In one approach, a mapping between caches and sense amplifiers in a sensing circuit is modified by using dual data buses. One bus is used for same-tier transfers and the other is used for cross-tier transfers. Each tier comprises a set of sense amplifiers and a corresponding set of caches. This approach does not require a modification of the input/output path which is connected to the sensing circuitry.

Abstract: Provided herein is a semiconductor memory device and an operating method thereof. The semiconductor memory device may include a memory cell array, a peripheral circuit, and a control logic. The memory cell array may include a plurality of memory blocks. The peripheral circuit may perform a program operation or read operation on a selected memory block of the memory cell array. The control logic may select between a first program method and a second program method depending on program mode information for the selected memory block, and may control the peripheral circuit to perform the program operation on the selected memory block using the selected program method.

Abstract: The present disclosure provides embodiments for methods and memory devices. One embodiment of a memory device includes a first volatile memory cell having a first volatile access transistor with a current electrode coupled with a first volatile bit line; a first non-volatile memory cell having a first non-volatile access transistor with a current electrode coupled with a first non-volatile bit line; and a transfer circuit coupled between the first volatile bit line and the first non-volatile bit line. The transfer circuit is configured to: couple data latched from the first volatile bit line with the first non-volatile bit line during a store operation, and couple the first volatile bit line with the first non-volatile bit line during a restore operation.

Abstract: A memory device may include: a plurality of cell mats arranged in a plurality of rows and columns; a plurality of first drivers, each first driver being disposed on a left side of a corresponding cell mat of the plurality of cell mats and configured to drive a first sub-word line of the corresponding cell mat; and a plurality of second drivers, each second driver being disposed on a right side of the corresponding cell mat of the plurality of cell mats and configured to drive a second sub-word line of the corresponding cell mat, wherein, during an active operation, among the plurality of cell mats, sub-word lines of cell mats disposed in odd-numbered columns or sub-word lines of cell mats disposed in even-numbered columns are selectively activated.

Abstract: An apparatus includes a storage resource to store data. The data can be accessible by a host computer system. The apparatus includes a set of dynamically powered volatile memory devices that are configured to store mapping information. The mapping information maps logical addresses of received access requests to corresponding physical addresses of the storage resource to which the access requests pertain. In accordance with received mode setting information, the controller logic adaptively controls power settings of the volatile memory devices storing the mapping information. If an abundance of power such as 120 VAC power is available, more of volatile memory devices can be powered to store a greater portion of the mapping information. If only battery power is available, fewer than all of the volatile memory devices can be powered to store a smaller portion of the mapping information.

Abstract: A memory device includes a nonvolatile memory unit a volatile memory unit, and a memory controller. When the memory controller receives a first read command designating a first address range of the nonvolatile memory from a host, the memory controller reads data of a second address range that includes and is longer than the first address range from the nonvolatile memory unit, stores the data of the second address range in the volatile memory unit, and then transfers the data of the first address range from the volatile memory unit to the host. When the memory controller receives a second read command designating a third address range that follows the first address range and is within the second address range, after receiving the first read command, the memory controller transfers corresponding data that has been already stored in the volatile memory unit to the host.

Abstract: The present disclosure includes apparatuses and methods related to performing logical operations using sensing circuitry. An example apparatus comprises an array of memory cells and sensing circuitry coupled to the array. The sensing circuitry includes a plurality of sensing components coupled to a controller. The controller is configured to selectively activate a first control line and a second control line to invert signals stored on a latch.

Abstract: Techniques are presented for determining current levels based on the behavior of a charge pump system while driving a load under regulation. While driving the load under regulation, the number of pump clocks during a set interval is counted. This can be compared to a reference that can be obtained, for example, from the numbers of cycles needed to drive a known load current over an interval of the duration. By comparing the counts, the amount of current being drawn by the load can be determined. This technique can be applied to determining leakage from circuit elements, such as word lines in a non-volatile memory.

Abstract: An autonomous memory device in a distributed memory sub-system can receive a database downloaded from a host controller. The autonomous memory device can pass configuration routing information and initiate instructions to disperse portions of the database to neighboring die using an interface that handles inter-die communication. Information is then extracted from the pool of autonomous memory and passed through a host interface to the host controller.

Abstract: A memory configured to have data read therefrom is provided. The memory includes a data port including B transmitters disposed in parallel and for transferring data on both rising and falling edges of a clock, a first memory including a first data bus including N lines on which N bits can be transferred, and a second memory including a second data bus including N lines on which N bits can be transferred. The memory includes a data path controller including a data distributor disposed between the first and second memories and being connected to the data port, wherein, on the rising edge, the data distributor distributes a first data segment comprised of B bits from the first data bus to the data port and, on the falling edge, the data distributor distributes a second data segment comprised of B bits from the second data bus to the data port.

Abstract: An electronic device is provided to comprise a semiconductor memory unit that comprises: a substrate including active regions, which are extended in a second direction and disposed from each other in a first direction; a plurality of gates extended in the first direction and across with the active regions; a lower contact disposed in both sides of gates and coupling the active regions in the first direction; an upper contact of the lower contact overlapping with the active region out of the active regions in a side of each gate, and overlapping with the active regions in the other side of each gate; and first and second interconnection lines coupled to the upper contact, extended in the second direction, and being alternately disposed from each other in the first direction, wherein the upper contact of a side of the gates has a zigzag shape in a first oblique direction.

Abstract: Apparatus and methods are disclosed, including a method that raises an electrical potential of a plurality of access lines to a raised electrical potential, where each access line is associated with a respective charge storage device of a string of charge storage devices. The electrical potential of a selected one of the access lines is lowered, and a data state of the charge storage device associated with the selected access line is sensed while the electrical potential of the selected access line is being lowered. Additional apparatus and methods are described.

Abstract: A block memory device and method of transferring data to a block memory device are described. Various embodiments provide methods for transferring data to a block memory device by adaptive chunking. The data transfer method comprises receiving data in a data chunk. The data transfer method then determines that the data chunk is ready to be transferred to a block memory and transfers the data chunk to the block memory. The transfer occurs over duration, repeating the above steps until the transfer is complete. The data transfer method determines that the data chunk is ready to be transferred to the block memory based on at least in part on a duration of a previous transfer.

Abstract: A system for write-once memory (WOM) code emulation of EEPROM-type devices includes, for example, a host processor for sending data words for storing in a WOM (Write-Only Memory) device. A host interface receives the data words for encoding by a WOM controller. An emulator programs the WOM-encoded data and an address identifier as an entry of the WOM device. The emulator overwrites previously programmed WOM-encoded data by searching entries of a current active page of a WOM device to locate a programmed WOM entry that includes the searched-for address identifier and the previously written WOM-encoded data word. When the previously written WOM-encoded word cannot be correctly overwritten, the contents of the second WOM-encoded word are stored in a new entry. When the current active page is substantially full, the new entry is stored a new page and the current active page is block-erased.

Abstract: A system in a package (SIP) has a first die with a first internal voltage level, first die-to-die output circuitry, first die-to-die input circuitry, and first internal logic and a second die with a second internal voltage level, second die-to-die output circuitry, second die-to-die input circuitry, and second internal logic. A first signal is provided to the second internal logic via the first die-to-die output circuitry and the second die-to-die input circuitry, wherein each of the first die-to-die output circuitry and second die-to-die input circuitry selectively level shift the first signal based on the first and second internal voltage levels. A second signal is provided to the first internal logic via the second die-to-die output circuitry and the first die-to-die input circuitry, wherein each of the second die-to-die output circuitry and first die-to-die input circuitry selectively level shift the second signal based on the first and second internal voltage levels.

Abstract: Techniques are disclosed relating to configuring an interlock memory system. In one embodiment, a method includes determining a sequence of memory access requests for a program and generating information specifying memory access constraints based on the sequence of memory accesses, where the information is usable to avoid memory access hazards for the sequence of memory accesses. In this embodiment, the method further includes configuring first circuitry using the information, where the first circuitry is included in or coupled to a memory. In this embodiment, after the configuring, the first circuitry is operable to perform memory access requests to the memory corresponding to the sequence of memory accesses while avoiding the memory access hazards, without receiving other information indicating the memory access hazards.

Abstract: Examples of the present disclosure provide apparatuses and methods for performing shift operations in a memory. An example method comprises performing a shift operation a first element stored in a first group of memory cells coupled to a first access line and a number of sense lines of a memory array and a second element stored in a second group of memory cells coupled to a second access line and the number of sense lines of the memory array. The method can include shifting the first element by a number of bit positions defined by the second element by performing a number of AND operations, OR operations, SHIFT operations, and INVERT operations performed without transferring data via an input/output (I/O) line.

Abstract: It is an object to provide a semiconductor display device with high reliability. Further, it is an object to provide a semiconductor display device which can reduce power consumption. A decoder is provided for a scan line driver circuit and operates such that, in accordance with a signal input to the scan line driver circuit, a pulse is sequentially input only to scan lines included in pixels of rows performing display and a pulse is not input to scan lines included in pixels of rows at which display is not performed. Then, all pixels or part of pixels in the line selected by the pulse is supplied with a video signal from a signal line driver circuit, whereby display of an image is performed in pixels arranged in the specific area of the pixel portion.

Abstract: A semiconductor device with low power consumption or a semiconductor device with a reduced area is provided. The semiconductor device includes a cell array including a first memory cell and a second memory cell; and a sense amplifier circuit including a first sense amplifier and a second sense amplifier. The cell array is over the sense amplifier circuit. The first sense amplifier is electrically connected to the first memory cell through a first wiring BL. The second sense amplifier is electrically connected to the second memory cell through a second wiring BL. The first sense amplifier and the second sense amplifier are electrically connected to a wiring GBL. The sense amplifier circuit is configured to select one of a potential of the first wiring BL and a potential of the second wiring BL and output the selected potential to the wiring GBL.

Abstract: Provided is an electronic device including a switching element, wherein the switching element may include a first electrode, a second electrode, a switching layer interposed between the first and second electrodes, and a first amorphous semiconductor layer interposed between the first electrode and the switching layer.

Abstract: Exemplary embodiments provide access to an updated file performed by at least one processor, wherein responsive to receiving a first list of logical block addresses (LBAs) and a second list of LBAs for an update, wherein the first list of LBAs is mapped to a first list of physical block addresses (PBAs), and the second list of LBAs is mapped to a second list of PBAs, the method, comprising: atomically remapping the first list of LBAs so that the first list of LBAs is mapped to the second list of PBAs; trimming a mapping of the first list of LBAs to the first list of PBAs; and unmapping the mapping of the second list of LBAs to the second list of PBAs.

Abstract: Example embodiments provide access to an updated file performed by at least one processor, wherein responsive to receiving a first list of logical page numbers (LPNs) and a second list of LPNs for an update, wherein the first list of LPNs is mapped to a first list of physical page numbers (PPNs), and the second list of LPNs is mapped to a second list of PPNs, the method, comprising: atomically remapping the first list of LPNs so that the first list of LPNs is mapped to the second list of PPNs; and trimming a mapping of the first list of LPNs to the first list of PPNs.

Abstract: Exemplary embodiments provide access to an updated file performed by a computer having at least one processor, wherein responsive to an application receiving an update comprising modified content of an old file, a new file is created into which the modified content is copied, while access to the old file is maintained, wherein old file logical block addresses (LBAs) are mapped to old file physical block addresses (PBAs), and new file LBAs are mapped to new file PBAs, the method, comprising: atomically swapping the mapping of the old file LBAs from the old file PBAs to the new file PBAs; trimming the mapping of the old file LBAs to the old file PBAs; and clearing the mapping of the new file LBAs to the new file PBAs.

Abstract: A memory stack includes a number of memory dies including a master die and one or more slave dies. The slave die can be converted to a master die by further processing. The slave die includes a memory core having memory cell arrays. The slave die also includes first and second metal layers that form first and second distribution lines in the memory core, respectively. An interface circuit in the slave die is decoupled from the first and second metal layers.

Abstract: According to one embodiment, a storage system includes a plurality of memory units including a nonvolatile memory and a control unit which controls the nonvolatile memory, a routing unit which controls transfer of a packet between the memory units. The routing unit uses a partial address described in the packet and not the full address.

Abstract: A data storage device with flash memory and a flash memory control method are disclosed, in which the flash memory includes multi-level cells (MLCs) and single-level cells (SLCs). A microcontroller is configured to establish a first physical-to-logical address mapping table (F2H table) in a random access memory (RAM) for a first run-time write block containing MLCs. The microcontroller is further configured to establish a second F2H table in the RAM for a second run-time write block containing SLCs. When data that was previously stored in the first run-time write block with un-uploaded mapping information in the first F2H table is updated into the second run-time write block, the microcontroller is configured to update a logical-to-physical address mapping table (H2F table) in accordance with the first F2H table. The H2F table is provided within the flash memory.

Abstract: A memory device may include a plurality of memory banks, a row control signal input unit suitable for receiving a plurality of row control signals, a column control signal input unit suitable for receiving a plurality of column control signals, a row control unit suitable for selecting a memory bank and a row in response to the row control signals, and controlling a row operation for the selected row, and a column control unit suitable for selecting a memory bank and column in response to the column control signals, and controlling a column operation for the selected column.

Abstract: A non-volatile memory device can include a plurality of immediately adjacent offset vertical NAND channels that are electrically coupled to a single upper select gate line or to a single lower select gate line of the non-volatile memory device.

Abstract: Phase change memory apparatuses include memory cells including phase change material, bit lines electrically coupled to aligned groups of at least some of the memory cells, and heating elements electrically coupled to the phase change material of the memory cells. The heating elements include vertical portions extending in a bit line direction. Additional phase change memory apparatuses include dummy columns positioned between memory columns and base contact columns. The dummy columns include phase change memory cells and lack heating elements coupled to the phase change memory cells thereof. Additional phase change memory apparatuses include heating elements operably coupled to phase change memory cells. An interfacial area between the heating elements and the phase change memory cells has a length that is independent of a bit line width. Methods relate to forming such phase change memory apparatuses.

Abstract: A logic circuit includes a setting circuit which holds and outputs setting information, a first flip-flop which holds data written to the setting circuit and outputs it in synchronization with an inputted clock, a second flip-flop which holds a write address for selecting the setting circuit and outputs it in synchronization with the inputted clock, and a third flip-flop which holds write enable which allows writing to the setting circuit and outputs it in synchronization with the inputted clock, wherein the setting circuit includes a fourth flip-flop which holds the setting information in synchronization with a given timing signal, and a fifth flip-flop which holds the output of the third flip-flop and outputs a write clock to the fourth flip-flop as the timing signal in synchronization with the inputted clock.

Abstract: A semiconductor memory cell includes a floating body region configured to be charged to a level indicative of a state of the memory cell; a first region in electrical contact with said floating body region; a second region in electrical contact with said floating body region and spaced apart from said first region; and a gate positioned between said first and second regions. The cell may be a multi-level cell. Arrays of memory cells are disclosed for making a memory device. Methods of operating memory cells are also provided.

Abstract: Multi-bank SRAM devices, systems, methods of operating multi-bank SRAMs, and/or methods of fabricating multi-bank SRAM systems are disclosed. For example, illustrative multi-bank SRAMs and methods may include or involve features for capturing read and write addresses at a particular frequency, splitting and/or combining them via one or more splitting/combining processes, and bussing them to each SRAM bank, where they may be split and/or combined via one or more splitting/combining processes to read and write to a particular bank. Some implementations herein may also involve features for capturing two beats of write data at a particular frequency, splitting and/or combining them via one or more splitting/combining processes, and bussing them to each SRAM bank, where they may be split and/or combined via one or more splitting/combining processes for writing to a particular bank. Reading and writing to banks may occur at less than or equal to half the frequency of capture.

Abstract: A static random access memory (SRAM) includes an array of storage cells arranged as rows and columns and a read controller to manage reading from the storage cells. The array of storage cells includes word lines that correspond to the rows and bit lines that correspond to the columns. The read controller is configured to receive a precharge signal and a word line signal and identify consecutive reads from storage cells accessed via a same one of the word lines. The read controller is further configured to, based on the precharge signal and the word line pulse signal indicating that the SRAM is to operate in a partial burst mode, precharge the bit lines no more than once during the consecutive reads and charge the same one of the word lines after each read of the consecutive reads.

Abstract: A semiconductor memory device includes data path circuits and control circuits alternately disposed along a first direction. A first metal layer is disposed on the data path circuits and control circuits. Each of data path circuits includes a memory cells disposed in rows along the first direction and columns along a second direction crossing the first direction and a read/write circuit disposed at an end of the columns of memory cells. At least one pair of adjacent columns of memory cells has an electrical separation between the gate polysilicon layer the pair of adjacent memory cell columns—that is, gate conductor layer of the adjacent memory columns are electrically distinct. A word line in the first metal layer is segmented along the first direction into separately addressable portions.

Abstract: Devices, systems, and methods of communicating information directly to a sequencer or a buffer in a memory device are provided. In some embodiments, instructions are sent directly from an external processor to a sequencer in the memory device, and the sequencer configures the instructions for an internal processor, such as one or more arithmetic logic units (ALUs) embedded on the memory device. Further, data to be operated on by the internal processor can be sent directly from the external processor to a buffer, and the sequencer can copy the data from the buffer to the internal processor. As power can be consumed each time a memory array is written to or read from, the direct communication of instructions and/or data can reduce the power consumed in writing to or reading from the memory array.

Abstract: Examples of the present disclosure provide apparatuses and methods for performing shift operations in a memory. An example method comprises performing a shift operation a first element stored in a first group of memory cells coupled to a first access line and a number of sense lines of a memory array and a second element stored in a second group of memory cells coupled to a second access line and the number of sense lines of the memory array. The method can include shifting the first element by a number of bit positions defined by the second element by performing a number of AND operations, OR operations, SHIFT operations, and INVERT operations performed without transferring data via an input/output (I/O) line.

Abstract: Apparatuses and methods for controlling word lines and sense amplifiers in a semiconductor device are described. An example apparatus includes: a sub word line selection signal decoder which activates at least one of a plurality of sub word selection signals responsive to row address signals; a column segment selection signal decoder which activates at least one of a plurality of column segment signals responsive to a portion of column address signals and a portion of the row address signals; a column segment selection circuit which activates at least one of a plurality of column-subword selection signals responsive to the activated column segment signal and the activated sub word selection signal; and a sub word line driver which activates at least one of a plurality of sub word lines responsive to an activated main word line and the activated sub word selection signal.

Abstract: A semiconductor memory apparatus may include a decoding unit configured to enable one of a plurality of sub word line driver enable signals by decoding a plurality of addresses while the decoding unit operates in a normal mode, and enables specific sub word line driver enable signals among the plurality of sub word line driver enable signals regardless of the plurality of addresses while the decoding unit is operating in a test mode. The semiconductor memory apparatus may include a sub word line driver group configured to include a plurality of sub word line drivers, the plurality of sub word line drivers configured for activation in response to the plurality of sub word line driver enable signals. The sub word line driver group is configured so that inactivated sub word line drivers are arranged between activated sub word line drivers while the decoding unit is operating in the test mode.

Abstract: The embodiments described herein provide an antifuse that includes a substrate material and an isolation trench formed in the substrate material, where the isolation trench has a first side and a second side opposite the first side. An electrode is positioned above the substrate material and proximate to the first side of the isolation trench. An insulating layer is disposed between the electrode and the substrate material. So configured, a voltage or current applied between the electrode and the substrate material causes a rupture in the insulating layer and creates a current path through the insulating layer and under the isolation trench to the substrate material proximate the second side of the isolation trench.

Abstract: A semiconductor memory device includes a first page buffer block and a second page buffer block corresponding to a first memory bank and a second memory bank, respectively, an input/output control circuit suitable for transferring input data to data lines, a first column decoder and a second column decoder suitable for latching the input data transferred through the data lines to the first page buffer block and the second page buffer block, respectively, based on a column address transferred through address lines that are shared by the first and second column decoders, and a control signal generation circuit suitable for generating a plurality of page buffer selection signals to control the first and second column decoders to selectively perform data latch operations on the first and second page buffer blocks.

Abstract: A memory apparatus includes a first memory bank, a second memory bank, a row decoder and repair circuit, and an input/output driver controller. The row decoder and repair circuit is coupled to the first and second memory banks in common. The row decoder and repair circuit generates a shared repair signal according to whether a word line disposed in a first memory bank is replaced with a word line disposed in a second memory bank. The input/output driver controller allows read or write operations for one of the first and second memory banks to be performed based on the shared repair signal and an operation signal.

Abstract: A rack server system and an auto-addressing method thereof are disclosed. The rack server system comprises a plurality of backplanes and a rack management controller (RMC). The backplanes comprise a plurality of inter-integrated circuit (I2C) switches. The RMC comprises an I2C channel connected to the backplanes. When the RMC initializes the backplanes, the RMC controls a plurality of reset signals to be an enable level to reset the I2C switches, and automatically addresses a plurality of different I2C device addresses to the I2C switches. The RMC changes the reset signals to be a disable level from the enable level after the RMC addressed the I2C switches.