Abstract: A shift register system is disclosed wherein shift registers buffering memory data perform shift operations in response to a set of sub-clock signals. The set of sub-clock signals comprise nested sub-clock signals having non-overlapping transitions formed from a system clock signal or power on reset signal. Each shift register (or bank of shift registers) responds to a different sub-clock signal. As a result, shift operations are spread out over a period of time rather than occurring simultaneously. Thus, the current drawn during each shift operation is similarly spread out over a period of time. The maximum current drawn during any one shift operation is inversely proportional to the number of non-overlapping sub-clock signal. Therefore, the maximum current drawn (i.e., current spike) drawn during memory operations is minimized.

Abstract: A memory comprising an addressing circuit is provided. The addressing circuit comprises at least one sequential shift register and at least one corresponding logic gate and at least one corresponding word flag cell coupled to each of the memory word lines. Enablement of the each memory word line depends upon the state of the word flag cell. In an alternate embodiment, a method for accessing a nonvolatile writeable memory is provided. The method comprises determining at least one non-operational memory bit cell of a nonvolatile writeable memory. At least one non-operational word line of the nonvolatile writeable memory is masked out, wherein the at least one non-operational word line contains the at least one non-operational memory bit cell. The nonvolatile writeable memory is sequentially addressed in read and write cycles, wherein the at least one non-operational word line is bypassed.

Abstract: A synchronous DRAM (SDRAM) having a posted column access strobe (CAS) latency and a method of controlling CAS latency are provided. In order to control a delay time from the application of a CAS command and a column address to the beginning of memory, reading or writing operations in units of clock cycles, a first method of programing the delay time as a mode register set (MRS) and a second method of detecting the delay time using an internal signal and an external signal, are provided. In the second method, the SDRAM can include a counter for controlling the CAS latency. This counter controls the CAS latency of the SDRAM by generating a signal for controlling the CAS latency according to the number of clock cycles of a clock signal from the generation of a row access command to a column access command in the same memory bank and reading the signal.

Abstract: A redundant circuit and method for a semiconductor memory device is disclosed. The redundant circuit includes a programmable circuit for selectively generating at least one first address corresponding to a defective memory row or column line, and shifter circuitry for remapping second addresses which are greater than the first address to row/column lines. For each second address which is greater than the first address, the shifter circuitry remaps the second address to a row/column line which was initially mapped to an immediately higher address relative to the second address. The programmable circuit is capable of generating a plurality of first addresses corresponding to a plurality of defective memory row or column lines.

Abstract: A semiconductor memory device includes an address register circuit for storing a plurality of address signals when an address latch enable signal is active in synchronization with a basic timing signal. When an internal operation start instructing signal is activated, a selected address signal from the address register circuit is supplied to a row decoder and a column decoder for memory cell selection. While an internal memory selection operation is performed, an address signal is stored in the address register circuit. Application of an address signal and a memory accessing is carried out asynchronously.

Abstract: The present invention relates to a command latency circuit for a programmable SynchLink Dynamic Random Access Memory (SLDRAM) which is an ultrahigh speed memory device. The command latency circuit for the SLDRAM includes: a command decoder unit for decoding and outputting an input of a command address; an internal clock generating unit for outputting an internal clock according to an input of a master clock while a latency is operated; a register decoder unit for receiving and decoding a register data; a burst control unit for receiving the output signal from the command decoder unit and the internal clock, and outputting a command pulse; a shift register unit for shift-outputting the output signal from the burst control unit according to an input of the internal clock; and an output unit for receiving the output signals from the shift register unit and the register decoder unit, and outputting a command signal having a wanted delay.

Abstract: A method for refreshing data in a circuit element included in a dynamic register. A static loop is coupled to the circuit element as a feedback path from the output terminal to the input terminal of the circuit element. A control signal is provided to the static loop. The static loop is activated via the control signal to refresh the data in the circuit element.

Abstract: An address generating circuit of a semiconductor memory device includes address buffers, multiplexers, shift registers and latches by which high-bit and low-bit write/read addresses in a normal mode and in a burst mode are routed through separate paths. A control circuit routes the high-bit read address data through a different path than the high bit write address data. The paths are joined to a common output latch, and include differential delays for the data. Similarly, the low-bit read continuing burst address data is routed through a different path than the low bit continuing burst write address data.

Abstract: A structure for providing clearing/programming includes a plurality of synchronous flip-flops, and a plurality of associated two-input multiplexers. A control signal in a first logic state provided to the multiplexers provides a first signal propagation direction through the flip-flops, whereas the control signal in a second logic state provides a second signal propagation direction through the flip-flops. One method for clearing and programming a programmable logic device includes arranging a plurality of memory cells in sets, clearing the sets in a first spatial sequence, and programming the sets in a second spatial sequence. Sets of memory cells could include columns of memory cells, each column having an associated storage element. In this manner, a plurality of columns of memory cells can be cleared or programmed in any predetermined order.

Abstract: A dual-port memory includes a dummy memory cell associated with a dummy output line and with a precharge transistor, the output of the dummy cell being at "0". A dummy read transistor is turned on by the active state of the read selection signal and connects the output of the dummy cell to the dummy output line. Circuitry is provided for turning on the output transistors of the memory when the state of the dummy output line reaches a predetermined switching threshold of an inverter.

Abstract: A digital memory matrix having memory cells in rows and columns, addressing of the memory cells is accomplished by control devices which perform arbitrary jumps of address, thereby avoiding addressing on adjacent lines. The jump increment is selectable. The control devices are control chains, two of which are provided, and the outputs of the control chains are connected to linking elements that in turn are connected to the memory lines. The linking elements are provided in groups.

Abstract: A memory circuit for operating synchronously with a system clock signal is designed with a memory array (250, 252, 254, 256) having a plurality of memory cells arranged in rows and columns. Each column decode circuit of a plurality of column decode circuits (502) produces a select signal at a respective column select line (108) in response to a first column address signal. A plurality of sense amplifier circuits (202) is arranged in groups. Each sense amplifier circuit is coupled to a respective column of memory cells. Each sense amplifier circuit includes a select transistor for coupling the sense amplifier to a respective data line (203). A control terminal of each select transistor of a group of sense amplifier circuits is connected to the respective column select line. A data sequence circuit (218) is coupled to receive four data bits from four respective data lines (210, 212, 214, 216) in response to a first cycle of the system clock signal.

Abstract: A synchronous semiconductor burst nonvolatile semiconductor memory includes first and second address counter circuits and a counter selection circuit in order to output an address signal to a first latch circuit for storing therein data from a memory cell. Either the first address counter circuit or the second address counter circuit is alternately selected by the counter selection circuit in response to a burst control signal. According to the invention, either the first address counter circuit or the second address counter circuit is always selected, and a burst address signal is outputted to the latch circuit on the basis of an externally supplied address signal (first signal of the burst address signal) before the burst control signal is generated.

Abstract: An analog delay circuit which includes an analog memory circuit wherein a plurality of memory cells each including a memory capacitor and a selection switch for the memory capacitor are arranged in a matrix includes row switches provided for the individual columns for individually being driven by row selection signals. A same clock signal from a clock generation circuit is supplied commonly to an X direction scanning circuit and a Y direction scanning circuit. The number of stages of registers of the X direction scanning circuit and the number of stages of registers of the Y direction scanning circuit are set so that they have no common divisor other than 1 Consequently, when the memory cells are to be selectively scanned, a same selection condition can be provided to all of the memory cells without relying upon the positions of the memory cells, and the parasitic capacitance connected to a signal write/read terminal is reduced.

Abstract: A clock control circuit receives an external clock signal and generates an internal clock signal. Through use of internal programming and an external trigger signal, the clock control circuit blocks out one or more of the clock cycles of the external clock signal to generate the internal clock signal. The clock control circuit can be used in any semiconductor device, and especially in synchronous flash memory devices with a burst operation. In the synchronous flash memory devices, one or more of the internal clock cycles are blocked out to account for increased delays during certain data sensing operations such as word line switching during data reading. In the synchronous flash memory devices, the sensed data is stored in input/output buffers and transferred out synchronously to the external clock signal.

Abstract: A semiconductor memory circuit comprises a memory array including an X decoder and column units. Each of the column units has a Y decoder, memory cells and bit line pairs. The semiconductor memory circuit further comprises switching circuits each having an input connected to one of the Y decoders and outputs. The switching circuit is connected to the input and one of the outputs in response to a control signal. The semiconductor memory circuit further comprises buffers each of which is connected to one of the outputs of the switching circuits, ports each of which is connected to one of the buffers and a memory control signal generating circuit outputting the X address and Y address.

Abstract: A memory cell array is divided into a plurality of blocks and sense amplifiers and shift registers are provided for the respective blocks. After a plurality of data sets are read out in the first random access cycle and transferred to each of the shift registers, column switching is made and a plurality of next data sets are read out. Then, the pipeline processing for the data items is effected to serially read out data in the serial access cycle.

Abstract: A command buffer for use in packetized DRAM includes a two stage shift register for shifting for sequentially storing two of the four 10-bit command words in each packet. After the first two words of each packet have been shifted into the shift register, they are transferred to a first storage register and output from the first storage register. After the final two words of each packet have been shifted into the shift register, they are transferred to a second storage register and output from the second storage register. The first two command words are output from the first storage register before the last two command words are applied to the command buffer. As a result, the DRAM can start processing the first two command words of the command packet before the entire command packet has been received. The command buffer also includes circuitry for determining whether a command packet is intended for the memory device containing the command buffer or whether it is intended for another memory device.

Abstract: A clock-synchronous semiconductor memory device includes many memory cells arranged in matrix, a count section for counting the actual number of cycles of a continuous, externally-supplied basic clock signal, a control section for inputting a row enable control signal (/RE) and the column enable control signal (/CE) provided from an external device, other than the basic clock signal, for which the control signals are at a specified level, synchronized with the basic control signal, and for setting the initial address for data access of the memory cells, and a data I/O section for executing a data access operation for the address set by the control section. In the device, the output of data from the memory cells through the data I/O section is started after the setting of the initial address by the control sections and after a specified number of basic clock signals has been counted by the count section.

Abstract: A sequential access memory comprises N register elements each storing an information bit. These N register elements are divided into P groups each comprising L elements. In a first phase of operation whose duration corresponds to P-1 consecutive periods of the clock signal, only the last elements of each group are activated and are furthermore series-connected. In a second phase of operation whose duration corresponds to a single period of the clock signal, all the elements are activated simultaneously, the groups of elements being furthermore series-connected. The advantage is that it enables a reduction in the dynamic consumption of the memory.

Abstract: A sequential access memory working at the rate of a clock signal CK includes N register elements N, each storing an information bit. These register elements are divided into L groups, each comprising P elements that are series-connected and simultaneously activated or not activated (with P.times.L=N). The register elements of a given group are activated at least P times consecutively during a part of the time, and are not activated for the rest of the time. Accordingly, each group stores P consecutive information bits each from among the N bits arriving in serial form at the input of the memory. The advantage of the memory is that it enables a reduction in the dynamic energy consumption.

Abstract: A system for adjusting the phase of an internal clock signal relative to an external clock signal in a packetized dynamic random access memory device. The system applies a plurality of initialization packets to the memory device that are captured in a shift register responsive to a transition of the internal clock signal. However, the phase of the internal clock signal is sequentially incremented after each initialization packet has been captured in the shift register. After a plurality of initialization packets have been captured, an evaluation circuit identifies which phases of the internal clock signal clocked the shift register at the proper time to accurately capture each initialization packet. A single phase of the internal clock signal is then selected from within the range of internal clock signal phases that successfully captured initialization packets. This selected phase of the internal clock signal is used during normal operation of the memory device.

Abstract: A semiconductor memory device which has a plurality of main word lines, a plurality of sub-word lines connected to the main word lines, and memory blocks connected to the sub-word lines, and can read/write memory information in one memory block by supplying a block selection signal to one memory block includes an initial address memory means, a block count memory means, a read/write completion detecting means, a block selecting means, and a data transfer completion means. The initial address memory means stores the initial address of a read/write memory block. The block count memory means stores the number of read/write memory blocks. The read/write completion detecting means detects completion of a read/write for one memory block.

Abstract: A dynamic random access memory DRAM includes banks which are driven to active or inactive states independently of each other. Activation/inactivation of these banks are controlled by row controllers operating independently of each other, whereby a page or word line can be selected in each of the banks, a page hit rate can be increased, and the number of array precharge operation times in a page error as well as power consumption can be reduced in response. Thus, the cache hit rate of a processor having a built-in DRAM is increased and power consumption is reduced.

Abstract: A method for the resetting of a group of series-connected non-transparent synchronous memory cells. The method includes modifying the clock signals that control the transfer gates of these cells on the activation of a resetting signal to set all the transfer gates in the on state. The method is particularly suited to the resetting of long shift registers such as those used in cryptographic applications, especially in micro-circuit cards, and the reset circuitry can be implemented using conventional logic gates.

Abstract: A method and apparatus for maximizing the data transmission rate from a source data path to selected channels of a destination data path having a different width from the source data path. In a preferred embodiment, the data transfer circuit includes at least one transfer register that is typically of the same width as the data source. Each bit from the transfer register is input to a plurality of multiplexers, each of which typically selects a single bit and outputs the selected bit to the destination.

Abstract: Disclosed is a semiconductor memory having a main memory cell array and redundant memory cells, with a plurality of fuses that can be physically separated from their associated fuse latches. Physical separation is possible by incorporating serial transfer circuitry to serially transfer fuse data from the fuses towards the latches. As a result, only a small number of wires are needed to connect the fuses to the fuse latches, allowing for flexible fuse placement within the memory.

Abstract: A semiconductor memory device has a main word decoder for selecting a cluster from a memory cell block, and the main word decoder stores pieces of control data information each representative of whether the cluster is defective or non-defective; while an external device is sequentially accessing the clusters, the main word decoder skips the defective clusters on the basis of the piece of control data information, and accelerates the data access to the clusters.

Abstract: A semiconductor memory device includes an address register circuit for storing a plurality of address signals when an address latch enable signal is active in synchronization with a basic timing signal. When an internal operation start instructing signal is activated, a selected address signal from the address register circuit is supplied to a row decoder and a column decoder for memory cell selection. While an internal memory selection operation is performed, an address signal is stored in the address register circuit. Application of an address signal and a memory accessing is carried out asynchronously.

Abstract: An improved burst address generator that is coupled to a memory array receives as its inputs a N-bit start address and dynamically generates a burst sequence of 2.sup.N decoded addresses. The burst address generator is responsive to a mode-select signal that determines whether the burst address generator operates in a linear mode or a non-linear mode. A decoder is provided for decoding the start address. A wrap-around up-down 2.sup.N -bit shift register, coupled to the address decoder, receives the decoded start address from the address decoder and dynamically provides the proper burst address sequences in accordance to the selected mode. A start address storage element is also coupled to the shift register and the address decoder to keep track of the start address.

Abstract: In a DRAM, an upper address is assigned to each of ways W0 and W1, and a lower address is assigned to each word line WL in each of ways W0 and W1. A self-refresh start trigger generating circuit senses start of self-refresh, and a refresh address change sensing circuit senses change in an upper address. Based on the result of sensing, way selection signals RX0 and RX1 will not be reset and held at an active level while ways W0 and W1 are selected, respectively. Consequently, power consumption can be reduced compared to a conventional example in which signals RX0 and RX1 are reset every time a single word line WL is selected.

Abstract: The present invention discloses a synchronous memory device capable of processing data at a high speed in a read path of the memory device, by decreasing the timing margin of the external clock signal which is input into the input registers, of the pipeline structure the memory device comprises: a) an address pad receiving an address signal; b) a first input register coupled to the address pad, wherein the first input registers including:, 1) a first switching device coupled to the address pad, wherein the first switching device is controlled by a first control signal; 2) a first latch device for storing the address signal from the first switching device; and 3) a second switching device coupled to the first latch device, wherein the second switching device is controlled by a second control signal, and wherein-the second control signal is 180.degree.

Abstract: The present invention provides a semiconductor memory circuit capable of high-speed access to a predetermined column portion by a simplified high-speed addressing circuit. The memory circuit in a DRAM is such that a portion of a column addressing circuit normally comprising a counter constitutes a shift register in a column addressing circuit at a preceding stage of a column address buffer so that a plurality of address signal wrappings are realized for accessing the predetermined column portion.

Abstract: A compression reading switch circuit is provided between a data equality/inequality determination circuit and compressed one data input/output terminal in a DRAM. In the I/O compression mode, desired data can be read out among output data DOT from the determination circuit and read data D01-D04 thereby specifying a defective memory cell among four memory cells.

Abstract: A method of eliminating signal contention during reconfiguration of a programmable logic device includes the steps of: arranging a plurality of memory cells in sets and selectively programming the memory cells one set at a time, either in a first direction or a second direction. A structure for providing that selective programming includes a plurality of synchronous flip-flops, and a plurality of associated two-input multiplexers. A control signal in a first logic state provided to the multiplexers provides a first signal propagation direction through the flip-flops, whereas the control signal in a second logic state provides a second signal propagation direction through the flip-flops.

Abstract: In a serially working memory unit with a memory matrix, a row selection unit and a column selection unit are configured such that, given faulty rows or columns, only correctable, single errors or errors of few successive bits occur. This memory unit offers advantages particularly for read-only memories since, due to the memory contents that are already determined during manufacture, substitute rows or columns can thereby not be provided.

Abstract: The present invention provides a circuit for programming a logic device comprising a first register for shifting data to a memory array, a second register for decoding an address space for a particular word within the logic device. The memory array has an address input and a data input coupled to the first and second registers. One of the registers is implemented as a registered counter block while the other register can be implemented as either a shift register, for a low pin count design, and/or a parallel load register for a higher pin counter and higher performance design.

Abstract: A memory device with a dynamic random access memory (DRAM) having an array of a plurality of rows and columns of memory elements; a cache memory formed integrally with the DRAM and includinmg at least one register with a plurality of memory elements and connected in pitch-matched relation to the DRAM array, the number of memory elements in a row of the DRAM being n times the number of memory elements in the at least one register, n being an integer greater than or equal to 2; and a connector for connecting the at least one register to the DRAM, the connector for the at least one register being a bus having a width corresponding to the number of memory elements therein.

Abstract: A plurality of static memory cells including CMOS flip-flops and switching MOS transistors are connected in series, thereby forming a memory cell unit in which one end of data reading is connected to bit lines. A series of the memory cell units are arranged, thereby forming a memory cell array. Reset terminals are provided for releasing cell data and causing the cell to function temporarily as a transfer gate of data.

Abstract: A signal input buffer attains a through state when an external clock signal Ka is in an inactive state and generates an internal signal in response to an external signal, and attains a latch state when the external clock signal is in an inactive state. Data transfer from a master data register which stores data in an DRAM array through a slave data register is executed in response to a detection of the slave data register of being in use. The slave data register stores data to be transferred to an SRAM array or data to be externally accessed. Thus, a synchronous semiconductor memory device accessible at a high speed and with no wait is provided. In addition, internal clock signal is activated for a predetermined time in response to activation of an external clock signal to secure a precise internal operating timing.

Abstract: A data transfer system, comprising: a plurality of data input/output gates arranged by k-unit group by k-unit group in a predetermined sequence; gate selecter circuit each arranged for k-unit group of the gates, for selecting the gates in unit of k-unit group; a plurality of data transfer paths for transferring data via the gates selected by the gate selecting means; a first register group composed of a-units of data registers for transferring data simultaneously to and from the data transfer paths, the a-unit data registers being serial-accessed in a constant sequence; and a scrambler circuit for designating any required data input/output gates and for further selectively connecting the data transfer paths connected to said designated data input/output gates with the data registers so that the data transfer paths connected to the designated input/output gates can be connected to the serial-accessible registers in a predetermined sequence, when the number of the data transfer paths is (L.times.

Abstract: A semiconductor memory device includes an address register circuit for storing a plurality of address signals when an address latch enable signal is active in synchronization with a basic timing signal. When an internal operation start instructing signal is activated, a selected address signal from the address register circuit is supplied to a row decoder and a column decoder for memory cell selection. While an internal memory selection operation is performed, an address signal is stored in the address register circuit. Application of an address signal and a memory accessing is carried out asynchronously.

Abstract: A method and apparatus for writing data onto the read bitline when a FIFO buffer memory is nearly empty that includes circuitry detecting when a memory is nearly empty, when the read pointer and the write pointer are on the same line with the read pointer behind the write pointer. Another circuit writes data onto the read bitline as the data is written into the buffer memory.

Abstract: A semiconductor memory device comprising a memory cell array includes a plurality of memory cells. The device includes: a predecoder for dividing a plurality of bits of an address signal into at least two bit strings so as to decode each bit string and output predecoded results of each bit string in parallel; a series of shift registers, each shift register being provided for a respective bit string, receiving the predecoded results of the corresponding bit string as shift data, shifting the received shift data, thereby generating and outputting predecoded signal bits; and a main decoder for decoding the predecoded signal bits output from the plurality of shift registers and selecting a memory cell in the memory cell array in accordance with the results of the decoding.

Abstract: A method and apparatus for reading a memory, such that the address decoding is started when the address bits have not yet all been received. All the information elements corresponding to the partially decoded address are extracted and, when the last address bits have been received, the information element corresponding to the complete address is selected. The maximum permissible time for extracting an information element is thus increased internally, while this period of time external to the memory remains the same for a given frequency.

Abstract: A computer memory device has a predetermined number of individually addressable storage cells and an internal addressing mechanism for storing a full address that determines which of the predetermined number of individually addressable storage cells will be accessed during a next memory access operation. The internal addressing mechanism includes a number of address segment registers whose concatenated outputs represent the full address. The width of each of the address segment registers is equal to the size of the address bus that couples the memory device to a processor. Mode control signals, sent by the processor, instruct the memory device to load a particular one of the address segment registers, thereby eliminating the need to include a number of address pins equal to the number of bits in the full address.

Abstract: Instructions of a program are stored at addresses sequentially designated in accordance with an M series pseudo-random number sequence in an instruction memory in the order of program addresses. A pseudo-random number program counter has a feedback shift register for generating the same M series pseudo-random number sequence and applies an address of an instruction to be read from the instruction memory to the instruction memory based on a generated pseudo-random number, and a jump address and a select signal from an instruction decoder. As a result, instructions are read from the instruction memory and executed in the order of program addresses. The feedback shift register can be implemented as a small-scale circuit and operable at high speed.

Abstract: A method and apparatus for processing moving picture signals on a real time basis using flash memories, in which the moving picture signals can be recorded and reproduced on the real time basis according to time division technology using multi-stage flash memories. The moving picture signal real-time processing apparatus using the flash memories provide a data output with which the moving picture signal can be processed on a real time basis, by a time division technology which uses an overlappingly multi-stage register portion, a multi-stage FIFO memory portion and a multi-stage flash memory portion.

Abstract: In order to improve the degree of storage data integration, side walls (32) are selectively formed on side surfaces of word lines (22) to serve as masks for changing ON-state current values of memory cells by changing widths or lengths of active regions (24) of the memory cells, thereby forming a plurality of types of memory cells having different electrical properties. Thus, storage data per memory cell is so multivalued that the number of memory cells is reduced.

Abstract: A serial access memory device is disclosed in which order of access to writing and reading memory cell columns can be controlled. A writing column selecting circuit and a reading column selecting circuit are each comprised of ring pointers with a controllable number of stages. The number of stages of the ring pointers is controlled in response to control signals stored in a serial interface circuit. As a result, two ring pointers each having two stages are formed in the writing column selecting circuit while one ring pointer having four stages is formed in the reading column selecting circuit. After two data signals are written in selected two memory cell columns in parallel, written data signals are read out from serially selected four memory cell columns at a speed twice that in the writing. This serial access memory device is applied to a progressive scan conversion circuit for video signal processing.