Abstract: The invention provides a memory device having page select capability. The serial access memory device provided includes a first data terminal and a memory cell array having a plurality of address locations. The serial access memory device including a shift register, an address decode circuit and a page select device. The page select device, in response to the access control signal, the address clock signal and the clock signal, selectively stores a page number therein.

Abstract: A semiconductor memory device for serially outputting previously loaded data from an integral memory is disclosed herein. The device is configured to output head data from a predetermined location in the memory by latching the head data directly from a common bus. In a preferred embodiment the head data is latched by a single latch circuit. In a method of the invention, the head data is transferred directly from a predetermined memory address onto a common bus. A latch circuit then latches the head data from the common bus. The latched head data is next presented to an output buffer. Thereafter, data is presented in a serial form from a plurality of serial registers to the output buffer.

Abstract: In an FIFO memory, a word line pointer (4) sequentially specifies word lines (8) in accordance with the first clock signal (CLK1) outputted from a clock generator (3). When the last pointer (5) outputs a last line access signal (PAS3) indicating that the last word line (8E) has been accessed, a control flag generator (2) detects that the last address has been accessed on the basis of the last line access signal (PAS3) and a clock signal (COS) in synchronization with the first clock (CLK1) and outputs a clock control signal (CCNT) in accordance with a timing of the detection. The clock generator 3 stops counting a reference clock signal (CLK0) in response to the clock control signal (CCNT). Thus, the access to a memory cell array of the FIFO memory is stopped in accordance with the number of effective pixels of inputted video signals, and thereby reduction in memory capacity and in power consumption can be achieved.

Abstract: A multiport series memory component for a multiprocessor system comprising an integrated circuit having a random access memory of a predetermined width corresponding to a block of information, an assembly of shift registers each of which has a size corresponding to the width of the memory unit, an internal parallel bus connecting the access of the memory unit to the shift registers, a shift register slection logic for validating the link on the internal bus between the memory unit and a predetermined shift register, and an assembly of extrnal input/output pins for the input of addresses to the memory unit for the input and validation of transfer commands in reading and writing of a block of information between the memory unit and the shift registers, for the input of a clock signal to each shift register, for bit-by-bit input of a block of information to each shift register and for the bit by bit output of a block of information from each shift register.

Abstract: A semiconductor integrated circuit device easily finds whether an error is located in an X decoder or a Y decoder. Circuit generating full cyclic sequences (36) and (38) are disposed which correspond to an X decoder (32) and a Y decoder (33), respectively, of a memory circuit (21). A specific state detection circuit (37) detects a specific address state of the circuit generating full cyclic sequence (36) so that one of an X address and a Y address is changed only after the other one of the X address and the Y address is thoroughly changed. Since when the error was created is known, which one of the X decoder and the Y decoder is responsible for the error is easily found.

Abstract: A data transfer system, comprising: a plurality of data input/output gates arranged by k-unit group by k-unit group in a predetermined sequence; gate selector circuit each arranged for k-unit group of the gates, for selecting the gates in unit of k-unit group; a plurality of data transfer paths for transferring data via the gates selected by the gate selector circuit; a first register group composed of a-units of data registers for transferring data simultaneously to and from the data transfer paths, the a-unit data registers being serial-accessed in a constant sequence; and a scrambler circuit for designating any required data input/output gates and for further selectively connecting the data transfer paths connected to said designated data input/output gates with the data registers so that the data transfer paths connected to the designated input/output gates can be connected to the serial-accessible registers in a predetermined sequence, when the number of the data transfer paths is (L.times.

Abstract: A memory 200 is provided including a plurality of arrays 202 of memory cells 203. A plurality of registers 211 are also provided, each register 211 for exchanging parallel bits of data with a corresponding one of the arrays 202. Data transfer circuitry 210, 213 is included for transferring parallel bits of data from any selected one of the arrays 202 through the corresponding register 211 to any other selected one of the arrays 202 through the corresponding register 211.

Abstract: An improved video RAM (1) is disclosed which is capable of reading at a high speed a data signal necessary for image processing. The data signal stored in a row of memory cells designated by a row decoder (13) is held in a serial register (4). A mode decoder (8) is responsive to externally provided interval data to control a counter (7) such that the counter (7) generates internal addresses SY0 to SY7 incrementing at the designated intervals. A serial decoder (6) is responsive to the internal addresses SY0 to SY7 to designate the serial register (4) at the designated intervals. Accordingly, only required data is provided from the serial register (4), with the result that desired data can be provided in a short period of time.

Abstract: A dual-port semiconductor memory device is disclosed that includes a number of array blocks (12) having memory cells disposed in rows and local columns, with each local column having a local bit line pair (30). A sense amplifier row (28) is associated with each array block (12) and includes a sense amplifier (28) coupled to each local bit line pair (30). Each sense amplifier row (14) is commonly connected through a number of bit line gates (32) to global bit line pairs (26) disposed on a higher fabrication layer than that of the local bit lines (30). A block decode signal commonly activates all the bit line gates (32) of one array block to couple the global bit lines (26) to one sense amplifier row (14). The global bit lines (26) are also connected to a column decoding section (18) which provides random input/output selection of a global bit line pair (26). A latch row (20) is also coupled to the global bit lines ( 26) through a number of latch gates (42).

Abstract: y memory blocks are connected in series. A row select signal is output to each memory block from a row address pointer corresponding to a plurality of memory circuits in one memory block. Similarly, a column select signal is output to each memory block from a column address pointer corresponding to a plurality of memory circuits in one memory block. Therefore, the same row and column select signals are applied to each memory block, whereby data is sequentially input/output for every memory block. Thus, the circuit complexity of the row and column address pointers can be reduced.

Abstract: A high-speed data acquisition and processing system. The system includes a sequential sampler that samples an input signal at periodic intervals. The resulting samples are provided on a plurality of sample outputs. These sample outputs are received by a matrix of signal processors, each of which receives and processes at least two inputs, and provides a processor output. The first row of signal processors receives the sample outputs and processes them. Subsequent rows of signal processors receive and process the outputs of signal processors in previous rows.

Abstract: The serial access memory device provided has a first data terminal and a memory cell array having a plurality of address locations. The serial access memory device comprises a shift register and an address decode circuit. The shift register, responsive to an address clock signal, stores a first address value of a serial access memory operation. The shift register has an input terminal coupled to the first data terminal. The address decode circuit serially accesses the plurality of address locations of the memory cell array, responsive to an access control signal, the first address value, the address clock signal and the clock signal.

Abstract: A semiconductor memory device is disclosed including a main memory configured as a dynamic random access memory array having rows and columns, combined with a secondary memory having a data register file, a transferring circuit for allowing transfer of data between the main memory and secondary memory, a first parallel-by-bit interface for random accesses to the main memory and a second parallel-by-bit interface for access to the seconday memory. Concurrent and independent accesses of the main and secondary memories is achieved while maintaining the integrity of data. Further included in the secondary memory is a data register file and a corresponding mask register file wherein the latter achieves selection of any combination of words in a row of the secondary memory for the purposes of transferring the same to the main memory.

Abstract: In a semiconductor memory device comprising a plurality of memory cells which are arranged on a cell area defined by a first number of column signal lines and a second number of row signal lines, a row decoder produces a row selection signal through one of the second number of row signal lines. A serial access section includes a data register and serially accesses a part of the plurality of memory cells arranged along the one end of the second number of row signal lines. The plurality of memory cells are divided into a plurality of cell blocks. The data register is divided into a plurality of subword data registers each of which corresponds to each of the plurality of cell blocks. The serial access section accesses the plurality of cell blocks, in order, at a predetermined interval. Each of the plurality of subword data registers stores subword data in each of the plurality of cell blocks, in order, at the predetermined interval.

Abstract: A FIFO memory device includes a storage device and an address translator. The storage device contains a plurality of FIFO storage units cells connected in parallel, wherein data is input to and output from each of the FIFO storage unit cells one word at a time, and data is input to the storage device one word at a time and output from the storage device in units of a plurality of words. The address translator is disposed between a central processing unit and an input side of the storage device for translating an address specified by the central processing unit into an address specifying one of the storage unit cells of the storage device. The address translator includes a count enable signal output element responsive to addressing from the central processing unit for outputting a count enable signal, a counter responsive to the count enable signal from the count enable signal output element for counting up, and a selector responsive to a count value of the counter for selecting one of the storage unit cells.

Abstract: A semiconductor memory device includes an address register circuit for storing a plurality of address signals when an address latch enable signal is active in synchronization with a basic timing signal. When an internal operation start instructing signal is activated, a selected address signal from the address register circuit is supplied to a row decoder and a column decoder for memory cell selection. While an internal memory selection operation is performed, an address signal is stored in the address register circuit. Application of an address signal and a memory accessing is carried out asynchronously.

Abstract: A FIFO memory device includes a storage device and an address translator. The storage device contains a plurality of FIFO storage unit cells connected in parallel, wherein data is input to and output from each of the FIFO storage unit cells one word at a time, and data is input to the storage device one word at a time and output from the storage device in units of a plurality of words. The address translator is disposed between a central processing unit and an input side of the storage device for translating an address specified by the central processing unit into an address specifying one of the storage unit cells of the storage device. The address translator includes a count enable signal output element responsive to addressing from the central processing unit for outputting a count enable signal, a counter responsive to the count enable signal from the count enable signal output element for counting up, and a selector responsive to a count value of the counter for selecting one of the storage unit cells.

Abstract: A semiconductor memory device having a memory cell array (MCA) composed of a plurality of memory cells arranged in a matrix pattern including a plurality of columns, a data register section provided with two first and second registers each having "a"-units of one-bit data register; a control section for selecting two sets of "a"-units of the column from a plurality of the columns for each "a"-cycles in accordance with inputted and read addresses, and for storing the "a"-units of data of the selected 2 "a"-units of column in either one of the first and second registers alternately on the basis of a sequence of the read addresses; and a data output section for scanning and outputting data of the 2 "a"-units of the one-bit data register in sequence. Data of column bits more than the number of the registers can be accessed continuously in spite of the minimum register configuration. Further, the head column address can be selected freely.

Abstract: The memory control this invention includes a microprogram-read-only-memory (CROM) containing micro instructions for operation of an integrated-circuit memory, a program counter multiplexer (PCM) to select instructions from the control-read-only-memory, a micro-instruction decoder (MID), a test input multiplexer (TIM) to test control signals, an optional status output register (SOR) to generate control signals, and an optional subroutine stack (SS) to allow function calls. Complex program, erase, and compaction instructions for the integrated-circuit memory are implemented using a relatively small number of control-read-only-memory locations and using a relatively small surface area on the memory chip. Control instructions are easily modified to compensate for process and structure enhancements are made during the production lifetime of an integrated-circuit memory.

Abstract: A memory device for storing analog or multilevel data which is easy to produce and of a small scale. The memory device according to the present invention circulates data between a plurality of linear CCD arrays which store data as electrical charges, allows high speed memory access by reading and writing data through cache memory which stores row addresses corresponding to CCD arrays, and includes an address register for registering the address of cache memory data.

Abstract: Sense amplifiers provided for each of the bit line pairs are divided into groups to be independently driven, whereby the influence of sense amplifiers of different groups can be prevented, and therefore the destruction of data of the non-selected memory cells during data transfer can be prevented. In transferring data from the data register to the memory cell array, the sense amplifier is not activated until the stored information of the memory cells selected by the word line is fully read to the corresponding bit lines, whereby the destruction of data stored in the non-selected memory cells can be prevented.

Abstract: An elastic memory determines an amount of delay of input data relative to other input data according to a phase difference between synchronous pulses each indicating a header of a frame of the associated input data. The elastic memory thus synchronizes both input data in the channel level. Both input data are time-division multiplied by a first multiplier. On the other hand, each counter receives synchronous pulses and thereby counting up to make a ROM produce address value of which order is determined previously according to the counted value. These address values are multiplied by a second multiplier. A decoder controls a RAM, a high-impedance control unit and a flip-flop to write in and read out of the RAM the input data. The read data are divided by a signal restoring device.

Abstract: A memory 200 is provided which includes a plurality of self-contained memory units 201 for storing data. A plurality of shift registers 211 are provided, each including a first parallel port coupled to a data port of a corresponding one of the self-contained memory units 201. Interconnection circuitry 212 is coupled to a parallel data port of each of the shift registers. Control circuitry 208, 213 is provided which is operable to control the exchange of data between a selected one of the memory units and the interconnection circuitry 212 via the shift register 211 coupled to the selected memory unit 201.

Abstract: A semiconductor memory device comprises an array of memory cell units, each of which has a plurality of MOS transistors connected in series and a plurality of information storage capacitors corresponding in number to the MOS transistors and each having its one end connected to the source of a corresponding one of the MOS transistors, and a plurality of register groups each of which is adapted to temporarily store information stored in one of the memory cell units for each column of the array in order to read from and write into each memory cell unit.

Abstract: A dual port memory has a plurality of memory cell arrays. Plural bit lines for one word are divided into k groups each including m bit lines, and k data busses are commonly provided for all of the memory cell arrays. Bit selecting circuits control data transfer between the data busses and the memory cell arrays. A shift register circuit includes a plurality of partial shift registers which are serially connected with each other and each of which includes serially connected registers corresponding to the data busses. The shift register circuit carries out parallel data transfer between the data busses and each of the partial shift registers, and serial data transfer between one of the partial shift registers and an outside circuit. A dual port memory is provided in which the number of circuit elements and the surface size of memory chips can be reduced while maintaining a high speed of operation.

Abstract: A bus interfacing circuit for permitting a unilateral read/write first-in first-out memory to perform first-in first-out functions without data bumping when operated in bilateral data buses is disclosed.

Abstract: There is provided a semiconductor memory device having output ports for serially accessing memory cells connected to a plurality of select lines, comprising: a decode counter adapted to be supplied with an initial value to count up to generate a plurality of counter address signals to output first decode signals obtained by decoding the counter address signals; and a serial decoder adapted to be supplied with the first decode signals respectively outputted from the decode counter to decode them to output second decode signals for selectig any one of the select lines.

Abstract: A counter counts clock signals. When a count thereof coincides with the number of rows or columns in a memory cell array, a row or column count coincidence signal is generated and applied to a shift input of a row or column address pointer formed of shift registers. The row or column address pointer is responsive to the clock signals to sequentially shift the count coincidence signal applied to the shift input, so that row or column selecting lines in the memory cell array are sequentially set in the selected state. Since the outputs at final stages in the row and column address pointers are not fed back to the inputs at the first stage thereof, signal delay in a feed back path is not caused, and thus operations for selecting rows and columns are performed at high speed. Also, respective shift register stages in the row and column address pointers have the same construction, and thus regularity thereof is maintained.

Abstract: A sequential access memory employs a dynamic type row address pointer 2 as a row address pointer for selecting row selection lines of a memory cell array 1, and a static type column address pointer 3 as a column address pointer for selecting a column selection lines 5 of memory cell array 1.

Abstract: A circuit for programming an EEPROM 42 which is used to provide trim adjustment for an integrated circuit (IC). The programming circuit provides the capability of programming the EEPROM 42 indefinitely, employing interfaces which are available even after the IC is packaged and encapsulated. Furthermore, it provides the manufacturer or enduser the capability of disabling the programming function permanently, to thereby prevent any inadvertent modifications of the EEPROM 42 data. The programming circuit includes a one-bit EEPROM 32, a nonvolatile memory element which retains its programmed logic state whether or not it is powered up. EEPROM 32 is set during final probe test by the application of a voltage to a probe pad 30 coupled to its set input terminal. Probe pad 30 is exposed such that it may be contacted by a probe prior to IC encapsulation, but is inaccessible after encapsulation.

Abstract: A serial data port in a dual port memory device adapted to receive incoming serial data and transfer the incoming serial data to a general data register, comprising; a plurality of data latches storing a portion of the incoming serial data, each data latch comprising a plurality of shift registers, and each shift register being responsive to one of a plurality of sequentially generated shift register control signals, and a plurality of transfer gates, each transfer gate gating the incoming serial data into a corresponding data latch in responsive to a one of a plurality of sequentially generated data latch control signals, wherein each data latch control signal defines a time period, and the plurality of shift register control signals is sequentially generated within the time period.

Abstract: In a sequential-access memory device having storage registers located at consecutively addressable rows, data are accessed from odd and even banks by enabling consecutive rows during a common read cycle. In particular, by coupling data lines separately to odd and even register rows in the memory device, data may be accessed selectably from consecutive register rows with reduced access time.

Abstract: A counter counts clock signals. When a count thereof coincides with the number of rows or columns in a memory cell array, a row or column count coincidence signal is generated and applied to a shift input of a row or column address pointer formed of shift registers. The row or column address pointer is responsive to the clock signals to sequentially shift the count coincidence signal applied to the shift input, so that row or column selecting lines in the memory cell array are sequentially set in the selected state. Since the outputs at final stages in the row and column address pointers are not fed back to the inputs at the first stage thereof, signal delay in a feed back path is not caused, and thus operations for selecting rows and columns are performed at high speed. Also, respective shift register stages in the row and column address pointers have the same construction, and thus regularity thereof is maintained.

Abstract: The present invention discloses an apparatus for receiving an ordered sequence of input data and for delaying the output of a delay output item by a variable-length delay-time. The apparatus includes an input port for receiving the ordered sequence of input data and the variable-length delay-time. The apparatus further includes an integrated data storage, a random access memory (RAM) for storing the ordered sequence of input data according to a storage-order corresponding to the ordered sequence of the input data. The apparatus further includes a delay output port for accessing and outputting the delay output item in the storage means according to the variable-length delay-time and the storage-order such that the delay output item is delayed by the variable-length delay-time.

Abstract: A synchronous memory (20) has parallel data output registers (34) and a dummy path (46). The output data from a memory array (22) is provided to the parallel output registers (34). The output registers (34) provide two parallel, interleaved, output data paths. The data in each path changes every other cycle of a clock signal. Dummy path (46) contains delay elements that model a propagation delay for a data path of the memory (20) during a read cycle. Using parallel data output registers (34) increases a time in which data is valid during the read cycle. The dummy path (46) tracks the output data signal in terms of process, power supply and temperature variations to ensure that the correct data is acquired during the read cycle.

Abstract: A serial access memory has multiple memory blocks, each with a row-and-column array of memory cells for storing data. Data access is synchronized with a clock signal. A column address counter counts the clock signal to generate a column address. A block selector decodes upper bits of the column address to generate a series of block select signals, which are distributed to the memory blocks. In each memory block a shift register receives and shifts one block select signal to generate a series of column select signals.

Abstract: A FIFO memory is disclosed which includes a plurality of memory cells, a mode circuit designating a first or a second mode in response to a mode signal supplied thereto, a selection circuit for selecting a first number of the memory cells each time a clock signal is generated in the first mode and for selecting a second number of the memory cells each time the clock signal is generated in the second mode, the first number being different from the second number, and an access circuit for accessing the selected memory cells to write data thereinto and to read data therefrom, whereby the number of memory cells to accessed is changeable in the mode to be performed.

Abstract: A semiconductor memory device having a memory cell array (MCA) composed of a plurality of memory cells arranged in a matrix pattern including a plurality of columns, a data register section provided with two first and second registers each having "a"-units of one-bit data register; a control section for selecting two sets of "a"-units of the column from a plurality of the columns for each "a"-cycles in accordance with inputted and read addresses, and for storing the "a" units of data of the selected 2 "a"-units of column in either one of the first and second registers alternately on the basis of a sequence of the read addresses; and a data output section for scanning and outputting data of the 2 "a"-units of the one-bit data register in sequence. Data of column bits more than the number of the registers can be accessed continuously in spite of the minimum register configuration. Further, the head column address can be selected freely.

Abstract: A FIFO memory circuit with improved read-access time includes an output register, which is connected to the data output terminal of the FIFO. The output register is clocked to provide the output of the FIFO with only the clock-to-output delay of the register. The FIFO memory circuit is formed with a series of latches, each of which latch has a data-input terminal connected in parallel to the data input terminal of the FIFO. Each latch has a tri-state output which is connected to an output terminal for the FIFO. Write-pointers select the next-available one of the FIFO locations to be read into. Read pointers select the next FIFO location to be read from. An input storage register is also provided to improve the input access time of the FIFO.

Abstract: A semiconductor memory circuit includes a memory cell array for storing data, and a bit structure selection circuit for performing a data transfer between the memory cell array and an external device by constructing the data in units of one bit or in units of two bits. The bit structure selection circuit includes a selector for selectively modifying a phase of a first clock signal and a second clock signal in response to a mode signal, and shift register for modifying a shift width of a memory selection signal in response to the first clock signal and the second clock signal supplied through the selector.

Abstract: In a memory device, data stored in memory cells bridging memory cell columns for two lines can be read out in response to an address signal supplied only once. The memory cells (R00-R03), (R10-R13), (R10-R13), (R20-R23)m (R20-R23) and (R30-R33) for the two adjoining lines are connected to common word lines L0, L1, L2. Also, a series of bit lines are sequentially selected by a counter. The data stored in the memory cells bridging the memory cell columns for the two lines can be read out only once by supplying an address signal only one time.

Abstract: The present invention provides a memory device for preventing data circulating on a plural number of linear CCD array from being corrupted, for accessing data at a high speed, and for reducing the device's electric power consumption.A memory device according to this invention downsizes a block of a memory cell by circulating data on a plural number of linear CCD arrays which are for storing data by an electric charge on a cell and keeping analog data, which sets a clock generation means for circulating data on all arrays and another clock generation means for circulating at a high speed only the array loops having necessary data.

Abstract: A semiconductor memory device of FIFO type is disclosed. The memory device has a test function for easy analysis of irregularities. A read data register for holding read data from the memory cells and a write data register for holding write data to the cells are provided corresponding to the memory cell array of the memory device. Further, bypass switch means for directly transferring data from the write data register into the read data register is provided.

Abstract: Disclosed is a semiconductor integrated circuit wherein a logic circuit for exchanging signals with RAMS, with the RAMS being disposed centrally on the semiconductor chip or substrate, is divided into a plurality of logic circuits in accordance with the kind of signals and the divided logic circuits are disposed around the RAM in such a manner as to minimize the distance of signal transmission paths with the RAM and in order to attain high speed access to RAMS.

Abstract: An integrated circuit memory array has a data input/output, a Read/Write* signal input, a row decoder, and a column decoder. An input circuit inputs a beginning and ending address to an on-chip memory controller which then sequentially addresses the beginning address, all the cells between the beginning address and the ending address, and the ending address, causing the array to sequentially output or input data from the sequence of cells, depending on the state of the Read/Write* signal.

Abstract: In a method for data transfer between a plurality of memory cells and at least one input/output terminal of a semiconductor memory, and a semiconductor memory for carrying out the method, a memory cell address is defined by a control signal for a data transfer. A data transfer operation from or to the memory cells is controlled with an address control signal and an output enable control signal for defining a memory cell address with one of the two signals. A data transfer operation is subsequently initiated at a given logical linkage of the two control signals. An ensuing data transfer is controlled with the other of the two control signals.

Abstract: A multiport memory having a plurality of serial output ports includes a semiconductor memory for storing data in a plurality of memory elements arrayed in rows and columns and coupled by respective row and column connecting lines. A first register stores data read in parallel from the semiconductor memory via the connecting lines of one of the rows and columns of the arrayed memory elements and serves to supply the data stored therein in serial form to a first one of the serial output ports. The first register is also operative to supply the data stored therein in parallel to a second register for storage therein. The second register is operative to supply the data stored therein to a second one of the serial output ports.

Abstract: A memory apparatus includes a memory cell array for storing a data, a shift register for receiving an input serial data to be stored in the memory cell array and supplying an output serial data to be read from the memory cell array, and a transfer gate for transferring a data in parallel between the shift register and the memory cell array. In the shift register, the input serial data is shifted to an output side thereof until the first bit reaches to the final step thereof. Then, the input serial data is transferred to be stored in the memory cell array by the transfer gate. Thus, when the stored data is read therefrom, no invalid bit is supplied even at the beginning time even if the shift register is longer than the input serial data.

Abstract: A decimating memory includes a memory having addressable memory locations. The memory forms a plurality of registers, each of the registers including at least one addressable memory location. The plurality of registers form a forward shifting data section and a reverse shifting data section. A first decoder operates the registers in the forward shifting data section and all but a first of the registers in the reverse shifting data section as FIFO registers via read and write addressing of the addressable memory locations to input and output data samples. The read and write addressing of the addressable memory locations is offset with respect to one another to provide a decimation factor. A paintbrush decoder operates the first register in the reverse shifting data section as a LIFO register for reverse sequencing data samples within blocks of data samples received from the forward shifting data section. Each of the registers in the forward shifting and reverse shifting data sections provide an output.

Abstract: A memory control device for controlling writing and reading data in and from a line memory made up of a plurality of FIFO memories. Writing clocks are circularly applied to the plurality of FIFO memories of the line memory. Also, reading clocks are circularly applied to the plurality of FIFO memories. Thus, although data written in the FIFO memories are discrete, data circularly read from the plurality of FIFO memories are sequential in such order as they are written in the line memory.