Particular Confinement Layer Patents (Class 372/45.01)
  • Patent number: 11127424
    Abstract: A light source-unit includes a laser diode, a sub-mount which the laser diode is joined. The laser diode includes an optical generating layer including an active layer which emits laser-light and cladding layers being formed so as to sandwich the active layer. The active layer includes a quantum dot layer including a plurality of quantum dots, which respectively confine movements of carriers in the three-dimensional directions.
    Type: Grant
    Filed: November 17, 2020
    Date of Patent: September 21, 2021
    Assignee: SAE Magnetics (H.K.) Ltd.
    Inventors: Kang Gao, Seiichi Takayama, Ryo Hosoi, Ryuji Fujii
  • Patent number: 11121523
    Abstract: A semiconductor heterostructure device includes a middle layer including an inner conducting channel and an outer current blocking region. A depleted heterojunction current blocking region (DHCBR) is within the outer current blocking region. The DHCBR includes a first depleting impurity specie including a Column II acceptor, and a second depleting impurity comprising oxygen which increases a depletion of the DHCBR so that the DHCBR forces current to flow into the conducting channel during electrical biasing under normal operation of the semiconductor heterostructure device.
    Type: Grant
    Filed: October 8, 2019
    Date of Patent: September 14, 2021
    Assignee: University of Central Florida Research Foundation, Inc.
    Inventor: Dennis G. Deppe
  • Patent number: 11121525
    Abstract: A quantum cascade laser including: a laser structure having a first region including a first facet, a second region including a second facet, an epitaxial surface, and a substrate surface; an insulating film disposed on the second facet and the epitaxial surface; an electrode disposed on the epitaxial surface and the insulating film and in contact with the epitaxial surface; and a metal film disposed over the second facet and the epitaxial surface and separated from the electrode and the substrate surface. The insulating film is disposed between the metal film and the second facet and between the metal film and the epitaxial surface. The second region includes a semiconductor mesa. The second facet is located at a boundary between the first region and the second region. The first region includes a connecting surface. The connecting surface connects the second facet to the first facet.
    Type: Grant
    Filed: September 27, 2019
    Date of Patent: September 14, 2021
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Jun-ichi Hashimoto
  • Patent number: 11114822
    Abstract: According to one embodiment, an optical semiconductor element includes a substrate, a light emitting layer, and a distributed Bragg reflector. The light emitting layer includes an AlGaAs multi quantum well layer. The distributed Bragg reflector is provided between the substrate and the light emitting layer. A pair of a first layer and a second layer is periodically stacked in the distributed Bragg reflector. The first layer includes AlxGa1-xAs. The second layer includes Inz(AlyGa1-y)1-zP. A refractive index n1 of the first layer is higher than a refractive index n2 of the second layer. The first layer has a thickness larger than ?0/(4n1) where ?0 is a center wavelength of a band on wavelength distribution of a reflectivity of the distributed Bragg reflector. The second layer has a thickness smaller than ?0/(4n2).
    Type: Grant
    Filed: February 13, 2020
    Date of Patent: September 7, 2021
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventors: Masanobu Iwamoto, Hideto Sugawara, Kenji Isomoto
  • Patent number: 11108213
    Abstract: A light modulation element according to example embodiments includes a substrate; a first lower DBR layer on the substrate including a first material layer alternately stacked with a second material layer having a different refractive index from the first material layer; a second lower DBR layer on the first lower DBR layer with a surface area less than the first lower DBR layer and including a third material layer alternately stacked with a fourth material layer having a different refractive index from the third material layer; an active layer on the second lower DBR layer, including a semiconductor material having a multi-quantum well structure and having a refractive index that varies according to an applied voltage; and an upper DBR layer on the active layer including a fifth material layer alternately stacked with a sixth material layer having a different refractive index from the fifth material layer.
    Type: Grant
    Filed: February 28, 2020
    Date of Patent: August 31, 2021
    Assignees: SAMSUNG ELECTRONICS CO., LTD., CALIFORNIA INSTITUTE OF TECHNOLOGY
    Inventors: Duhyun Lee, Muhammad Alam, Ghazaleh Kafaie Shirmanesh, Harry Atwater, Pin Chieh Wu, Ragip Pala
  • Patent number: 11085130
    Abstract: A method for producing at least one type of nanostructures comprises the following steps: partially covering a surface of a single-crystal layer or multilayer structure with a discontinuous mask, forming discrete islets having at least one submicrometric lateral dimension and made of a material having an evaporation temperature above that of the layer or multilayer structure; and heating the layer or multilayer structure under vacuum to a so-called etching temperature, above the evaporation temperature of the layer or multilayer structure but below that of the mask, so as to cause evaporation of the layer or multilayer structure outside of the regions covered by the mask. Structures that may be produced by such a method are also provided.
    Type: Grant
    Filed: June 3, 2016
    Date of Patent: August 10, 2021
    Assignee: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Stéphane Vezian, Benjamin Damilano, Julien Brault
  • Patent number: 11088512
    Abstract: This invention aims at providing a nitride semiconductor causing no element breakdown even in driving under a high current density. A nitride semiconductor element is provided with a nitride semiconductor active layer made of AlxGa(1-x)N and a composition change layer made above the nitride semiconductor active layer and made of Alx3Ga(1-x3)N in which an Al composition ratio x3 decreases in a direction away from the nitride semiconductor active layer.
    Type: Grant
    Filed: March 3, 2020
    Date of Patent: August 10, 2021
    Assignee: Asahi Kasei Kabushiki Kaisha
    Inventors: Kosuke Sato, Motoaki Iwaya, Shinji Yasue, Yuya Ogino
  • Patent number: 11073738
    Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor device having a semiconductor waveguide including a slab section, a rib section extending above the slab section, and raised ridges extending above the slab section on both sides of the rib section. The semiconductor device has a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or p-doped in each cross-section along the semiconductor waveguide. Electrical connection to the p-doped and n-doped material may be enabled by forming contacts on the raised ridges, and electrical connection may be provided to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide, where a cross-section of both the rib section and the slab section in the periodically arranged sections may be fully n-doped or fully p-doped.
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: July 27, 2021
    Assignee: Luxtera LLC
    Inventors: Attila Mekis, Subal Sahni, Yannick De Koninck, Gianlorenzo Masini, Faezeh Gholami
  • Patent number: 11060851
    Abstract: An optoelectronic device includes a semiconductor substrate and a monolithic array of light-emitting elements, including first and second sets of the light-emitting elements arranged on the substrate in respective first and second two-dimensional patterns, which are interleaved on the substrate. First and second conductors are respectively connected to separately drive the first and second sets of the light-emitting elements so that the device selectably emits light in either or both of the first and second patterns.
    Type: Grant
    Filed: September 15, 2016
    Date of Patent: July 13, 2021
    Assignee: APPLE INC.
    Inventors: Benny Pesach, Zafrir Mor
  • Patent number: 11054574
    Abstract: The methods of singulating an optical waveguide sheet that supports sheet optical waveguides include irradiating the optical waveguide sheet with a focused laser beam comprising ultrafast light pulses to form within the body of the optical waveguide sheet modified regions, which along with unmodified regions, that define a singulation line. The modified regions define modified sections that are spaced apart by the unmodified sections, which reside at locations of the sheet optical waveguides. The optical waveguide sheet is separated along the singulation line to form an optical waveguide substrate with substrate waveguides formed by sections of the sheet optical waveguides. The optical waveguide substrate has an end face with both smooth and rough sections. The substrate waveguides have end surfaces that terminate at the smooth sections, thereby enabling low-loss optical coupling to other optical components.
    Type: Grant
    Filed: May 16, 2019
    Date of Patent: July 6, 2021
    Assignee: Corning Research & Development Corporation
    Inventors: Lars Martin Otfried Brusberg, Davide Domenico Fortusini, Jason Grenier, Sergio Tsuda, Kristopher Allen Wieland
  • Patent number: 11056856
    Abstract: Embodiments of the invention relate to a plasmonic laser including a substrate and a coaxial plasmonic cavity formed on the substrate and adapted to facilitate a plasmonic mode. The plasmonic laser further includes an electrical pumping circuit configured to electrically pump the plasmonic laser. The coaxial plasmonic cavity includes a peripheral plasmonic ring structure, a central plasmonic core and a gain structure arranged between the peripheral plasmonic ring structure and the central plasmonic core. The gain structure includes one or more ring-shaped quantum wells as gain material. The one or more ring-shaped quantum wells have a surface that is aligned orthogonal to a surface of the substrate. The electrical pumping circuit is configured to pump the plasmonic laser via the peripheral plasmonic ring structure and the central plasmonic core.
    Type: Grant
    Filed: February 13, 2019
    Date of Patent: July 6, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Svenja Mauthe, Kirsten Emilie Moselund
  • Patent number: 11056857
    Abstract: A laser diode having a semiconductor layer sequence based on a nitride compound semiconductor material includes an n-type cladding layer, a first waveguide layer, a second waveguide layer and an active layer, and a p-type cladding layer including a first partial layer and a second partial layer, wherein the first partial layer includes Alx1Ga1-x1N with 0?x1?1 or Alx1Iny1Ga1-x1-y1N with 0?x1?1, 0?y1<1 and x1+y1?1, the aluminum content x1 decreases in a direction pointing away from the active layer so that the aluminum content has a maximum value x1max and a minimum value x1min<x1max, and the second partial layer includes Alx2Ga1-x2N with 0?x2?x1min or Alx2Iny2Ga1-x2-y2N with 0?x2?x1min, 0?y2<1 and x2+y2?1.
    Type: Grant
    Filed: September 19, 2018
    Date of Patent: July 6, 2021
    Assignee: OSRAM OLED GmbH
    Inventors: Christoph Eichler, Matthias Peter, Jan Wagner
  • Patent number: 11056434
    Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region, wherein the active region comprises multiple alternating well layers and barrier layers, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies at a distance of between 15 nm and 60 nm from the upper surface of the active region.
    Type: Grant
    Filed: January 19, 2018
    Date of Patent: July 6, 2021
    Assignee: EPISTAR CORPORATION
    Inventors: Yung-Chung Pan, Chang-Yu Tsai, Ching-Chung Hu, Ming-Pao Chen, Chi Shen, Wei-Chieh Lien
  • Patent number: 11035789
    Abstract: A cavity ring-down spectroscopy system and a method of modulating a light beam therein are provided. The cavity ring-down spectroscopy system includes at least one laser that generates a light beam, a first optical modulator positioned to attenuate the light beam from the at least one laser, a second optical modulator positioned to attenuate the light beam from the first optical modulator, a ring-down cavity positioned to receive the light beam from the second optical modulator, and at least one light sensor to detect an intensity of light leaked from the ring-down cavity.
    Type: Grant
    Filed: July 11, 2019
    Date of Patent: June 15, 2021
    Assignee: PICOMOLE INC.
    Inventors: Christopher Quentin Purves, Denis Dufour
  • Patent number: 11031753
    Abstract: A broad area quantum cascade laser includes an optical cavity disposed between two sidewalls, the optical cavity including an active region for producing photons when a current is applied thereto, where the optical cavity is subject to a presence of at least one high order transverse optical mode due to its broad area geometry. The broad area quantum cascade laser may also include an optically lossy material disposed on at least a first portion of one or more of the two sidewalls.
    Type: Grant
    Filed: January 26, 2018
    Date of Patent: June 8, 2021
    Assignee: The Government of the United States of America as represented by the Secretary of the Air Force
    Inventors: Ron Kaspi, Sanh Luong
  • Patent number: 11022491
    Abstract: The present disclosure describes broadband optical emission sources that include a stack of semiconductor layers, wherein each of the semiconductor layers is operable to emit light of a different respective wavelength; a light source operable to provide optical pumping for stimulated photon emission from the stack; wherein the semiconductor layers are disposed sequentially in the stack such that a first one of the semiconductor layers is closest to the light source and a last one of the semiconductor layers is furthest from the light source, and wherein each particular one of the semiconductor layers is at least partially transparent to the light generated by the other semiconductor layers that are closer to the light source than the particular semiconductor layer. The disclosure also describes various spectrometers that include a broadband optical emission device, and optionally include a tuneable wavelength filter operable to allow a selected pass through.
    Type: Grant
    Filed: April 14, 2020
    Date of Patent: June 1, 2021
    Assignee: ams Sensors Singapore Pte. Ltd
    Inventors: Peter Riel, Peter Roentgen
  • Patent number: 11016314
    Abstract: A method to configure an optical device. The method may rely on an optical device that includes two parallel mirrors extending, each, parallel to a reference plane, and an active material extending between the mirrors. An average plane of the active material is parallel to said reference plane, so as to form an optical resonator. The active material is energized so as to non-volatilely alter a refractive index and/or an optical absorption in one or more regions of said material. This results in forming one or more cavities, respectively, in which light can be laterally confined, in-plane with said average plane, in addition to being confined between the mirrors, along a direction perpendicular to said reference plane. Each of the one or more cavities has an altered mode profile compared to a non-altered region of the active material. Related methods and optical devices are also disclosed.
    Type: Grant
    Filed: August 14, 2018
    Date of Patent: May 25, 2021
    Assignee: International Business Machines Corporation
    Inventors: Darius Urbonas, Rainer F. Mahrt, Thilo H. C. Stoeferle
  • Patent number: 11011884
    Abstract: Methods for designing a mode-selective optical device including one or more optical interfaces defining an optical cavity include: defining a loss function within a simulation space encompassing the optical device, the loss function corresponding to an electromagnetic field having an operative wavelength within the optical device resulting from an interaction between an input electromagnetic field at the operative wavelength and the one or more optical interfaces of the optical device; defining an initial structure for each of the one or more optical interfaces, each initial structure being defined using a plurality of voxels; determining values for at least one structural parameter and/or at least one functional parameter of the one or more optical interfaces by solving Maxwell's equations; and defining a final structure of the one or more optical interfaces based on the values for the one or more structural and/or functional parameters.
    Type: Grant
    Filed: August 29, 2019
    Date of Patent: May 18, 2021
    Assignee: X Development LLC
    Inventors: Martin Friedrich Schubert, Brian John Adolf, Jesse Lu
  • Patent number: 10985528
    Abstract: A laser diode includes a semiconductor body having a substrate and a semiconductor layer sequence arranged on the substrate, which includes an active zone that generates electromagnetic radiation, wherein the semiconductor body has a first main surface and a second main surface opposite the first main surface and at least one first and second laser facet, which are respectively arranged transversely to the first and second main surfaces, and at least one structured facet region located at a transition between the first main surface and at least one of the first and second laser facets, and the structured facet region includes at least a strained compensation layer or a recess.
    Type: Grant
    Filed: April 14, 2020
    Date of Patent: April 20, 2021
    Assignee: OSRAM OLED GmbH
    Inventor: Sven Gerhard
  • Patent number: 10978614
    Abstract: A light-emitting device includes an emission structure, a current block layer on the emission structure, a reflective layer on the current block layer, a protection layer that covers the reflective layer, and an electrode layer on the protection layer.
    Type: Grant
    Filed: May 8, 2018
    Date of Patent: April 13, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong-in Yang, Dong-hyuk Joo, Jin-ha Kim, Joon-woo Jeon, Jung-hee Kwak
  • Patent number: 10964605
    Abstract: Disclosed herein are methods, structures, and devices for wafer scale testing of photonic integrated circuits.
    Type: Grant
    Filed: January 13, 2020
    Date of Patent: March 30, 2021
    Assignee: Acacia Communications, Inc.
    Inventors: Diedrik Vermeulen, Long Chen, Christopher Doerr
  • Patent number: 10951009
    Abstract: A design and method for introducing asymmetric crystal strain to control polarization in a tunable VCSEL, either optically or electrically pumped. The invention is especially relevant to wafer- or die-bonded tunable VCSELs. Then, mechanical stress is applied to the half VCSEL device by asymmetric arrangement of metal bond pads.
    Type: Grant
    Filed: May 10, 2019
    Date of Patent: March 16, 2021
    Assignee: Excelitas Technologies Corp.
    Inventors: Bartley C. Johnson, Mark R. Malonson, Walid A. Atia, Mark E. Kuznetsov, James W. Getz, Peter S. Whitney
  • Patent number: 10923884
    Abstract: A system includes a waveguide and an edge-emitting laser. The edge-emitting laser is configured to lase coherent light into the waveguide. The edge-emitting laser includes an optical cavity having an active gain section and a passive section. The active gain section is configured to amplify an optical power of light reflecting within the optical cavity. The passive section increases a functional length of the optical cavity such that a total length of the optical cavity reduces fringe interference of the coherent light propagating through the waveguide.
    Type: Grant
    Filed: May 15, 2019
    Date of Patent: February 16, 2021
    Assignee: Microsoft Technology Licensing, LLC
    Inventors: Shiva Shahin, Dale Eugene Zimmerman
  • Patent number: 10916915
    Abstract: A distributed feedback (DFB) semiconductor laser device includes an active layer, a first grating layer and a second grating. The first grating layer has a first grating structure with a first grating period. The second grating layer has a second grating structure with a second grating period substantially different from the first grating period. The active layer, the first grating layer and the second grating layer are vertically stacked, and the equivalent grating period of the DFB semiconductor laser device is (2×P1×P2)/(P1+P2), where P1 and P2 respectively represent the first grating period and the second grating period.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: February 9, 2021
    Assignee: NATIONAL SUN YAT-SEN UNIVERSITY
    Inventors: Yung-Jr Hung, Yen-Chieh Wang, Ping-Feng Hsieh, Wei Lin
  • Patent number: 10910530
    Abstract: An LED mounted method includes: providing a circuit substrate having a plurality of conductive pads; through a pick and place module, disposing a plurality of conductors on the conductive pads; disposing a plurality of LED chips on the circuit substrate, with each LED chip being disposed on at least two conductors; projecting a laser source generated by a laser generation module to each LED chip so that the laser source passes through the LED chip and is projected onto at least two conductors; and curing the conductor disposed between the LED chip and the circuit substrate by irradiation of the laser source so that the LED chip is mounted on the circuit substrate.
    Type: Grant
    Filed: April 15, 2019
    Date of Patent: February 2, 2021
    Assignee: ASTI GLOBAL INC., TAIWAN
    Inventor: Chien-Shou Liao
  • Patent number: 10910701
    Abstract: The radio antenna comprises a substrate formed of a dielectric material; a ground plane made of an electrically conductive material, the ground plane being arranged on a first face (F2) of the substrate; a resonator configured to convert an incident electrical signal into an electromagnetic wave. The resonator includes a first element (E1) having a first characteristic impedance and a second element (E2) having a second characteristic impedance that is higher than the first characteristic impedance. The first element (E1) is configured to receive the incident electrical signal, the first element (E1) is formed by a strip of electrically conductive material, the strip being arranged on a second face (F1) of the substrate opposite the first face (F2). The second element (E2) is formed by a rectilinear segment, cut in the ground plane and separated from the rest of the ground plane by a slot (202) of fixed width.
    Type: Grant
    Filed: October 4, 2018
    Date of Patent: February 2, 2021
    Assignees: BODYCAP, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITE DE RENNES 1
    Inventors: Denys Nikolayev, Maxim Zhadobov, Ronan Sauleau
  • Patent number: 10892600
    Abstract: A coupled-cavity vertical-cavity surface-emitting laser (VCSEL) is disclosed. The coupled-cavity VCSEL includes a passive cavity and an additional distributed Bragg Reflector (DBR) not found in conventional VCSELs, all in a monolithic device. By including these two elements, the photon lifetime may be increased by a factor of approximately ten, leading to a reduction in the laser linewidth by a factor of approximately 100 compared to conventional VCSELs. The two additional elements also serve to ensure single-mode operation of the coupled-cavity VCSEL.
    Type: Grant
    Filed: August 15, 2019
    Date of Patent: January 12, 2021
    Assignee: National Technology & Engineering Solutions of Sandia, LLC
    Inventors: Darwin K. Serkland, Michael Wood, Alejandro J. Grine, Gregory M. Peake
  • Patent number: 10892601
    Abstract: A vertical cavity light-emitting element comprises a substrate, a first multilayer reflector formed on the substrate, a semiconductor structure layer formed on the first multilayer reflector and including a light emitting layer, a second multilayer reflector formed on the semiconductor structure layer and constituting a resonator together with the first multilayer reflector, and a light guide layer configured to form a light guide structure including a center region extending in a direction perpendicular to the upper surface of said substrate between the first and second multilayer reflectors and including a light emission center of the light-emitting layer and a peripheral region provided around the center region and having a smaller optical distance between the first and second multilayer reflectors than that in the center region. The second multilayer reflector has a flatness property over the center region and the peripheral region.
    Type: Grant
    Filed: May 22, 2019
    Date of Patent: January 12, 2021
    Assignees: STANLEY ELECTRIC CO., LTD., MEIJO UNIVERSITY
    Inventors: Masaru Kuramoto, Seiichiro Kobayashi, Tetsuya Takeuchi
  • Patent number: 10892379
    Abstract: GaN-based nanowire heterostructures have been intensively studied for applications in light emitting diodes (LEDs), lasers, solar cells and solar fuel devices. Surface charge properties play a dominant role on the device performance and have been addressed within the prior art by use of a relatively thick large bandgap AlGaN shell covering the surfaces of axial InGaN nanowire LED heterostructures has been explored and shown substantial promise in reducing surface recombination leading to improved carrier injection efficiency and output power. However, these lead to increased complexity in device design, growth and fabrication processes thereby reducing yield/performance and increasing costs for devices. Accordingly, there are taught self-organising InGaN/AlGaN core-shell quaternary nanowire heterostructures wherein the In-rich core and Al-rich shell spontaneously form during the growth process.
    Type: Grant
    Filed: November 26, 2019
    Date of Patent: January 12, 2021
    Assignee: The Royal Institution for the Advancement of Learning/McGill University
    Inventors: Zetian Mi, Songrui Zhao, Renjie Wang
  • Patent number: 10873174
    Abstract: A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.
    Type: Grant
    Filed: September 1, 2017
    Date of Patent: December 22, 2020
    Assignee: Sony Corporation
    Inventors: Susumu Sato, Tatsushi Hamaguchi, Shoichiro Izumi, Noriyuki Futagawa, Masamichi Ito, Jugo Mitomo, Hiroshi Nakajima
  • Patent number: 10866482
    Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor waveguide including a slab section, a rib section extending above the slab section, raised ridges extending above the slab section on both sides of the rib section, and a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or fully p-doped in each cross-section along the semiconductor waveguide. Electrical contact may be made to the doped material via contacts on the raised ridges, and electrical contact may be made to the rib section via periodically arranged sections of the semiconductor waveguide. A cross-section of both the rib section and the slab section in the periodically arranged sections may be mostly n-doped with an undoped portion or mostly p-doped with an undoped portion.
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: December 15, 2020
    Assignee: Luxtera LLC
    Inventors: Attila Mekis, Subal Sahni, Yannick De Koninck, Gianlorenzo Masini, Faezeh Gholami
  • Patent number: 10862275
    Abstract: A semiconductor device includes a first pair of nitride semiconductor regions, and a current confinement region which includes a first portion, a second portion disposed on a side of the first portion, and a third portion disposed on another side of the first portion. A width of the second portion is larger than a width of the first portion, the width of the second portion is larger than a width between the first pair of nitride semiconductor regions, and both ends of the second portion are covered by the first pair of nitride semiconductor regions, respectively.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: December 8, 2020
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventor: Kazuo Fukagai
  • Patent number: 10852478
    Abstract: A photonic integrated circuit including a photonic device and a gain element, said gain element formed by a process including: depositing by epitaxy a first doped layer onto a substrate; depositing by epitaxy an active layer capable of optical gain onto the first doped layer; depositing by epitaxy a second doped layer onto the active layer; pattern etching at least the second doped layer and the active layer to form a first ridge; and depositing by epitaxy a current blocking layer laterally adjacent to the first ridge at least partially filling the volume of active layer that was removed by the pattern etching; wherein the current blocking layer forms a portion of the photonic device.
    Type: Grant
    Filed: May 28, 2019
    Date of Patent: December 1, 2020
    Assignee: Ciena Corporation
    Inventors: Kelvin Prosyk, Ian Woods
  • Patent number: 10855054
    Abstract: A semiconductor laser device includes a semiconductor substrate, a resonator unit formed on the semiconductor substrate and having an active layer, a diffraction grating formed on or underneath the active layer, a front facet of an inverted mesa slope, and a rear facet, an anti-reflection coating film formed on the front facet, a reflective film formed on the rear facet, an upper electrode formed on the resonator unit, and a lower electrode formed underneath the semiconductor substrate, wherein a length in a resonator direction of the resonator unit is shorter than a length in the resonator direction of the semiconductor substrate, and a laser beam is emitted from the front facet.
    Type: Grant
    Filed: January 19, 2017
    Date of Patent: December 1, 2020
    Assignee: Mitsubishi Electric Corporation
    Inventors: Ayumi Fuchida, Yuichiro Okunuki, Go Sakaino, Tetsuya Uetsuji, Naoki Nakamura
  • Patent number: 10855051
    Abstract: What is shown is a method for manufacturing a semiconductor light source. The semiconductor light source has a substrate and a layer sequence arranged above the substrate, the same having a light-emitting layer and an upper boundary layer arranged above the light-emitting layer. The layer sequence is patterned in order to form a light-emitting stripe for defining the semiconductor light source and an alignment stripe, extending in parallel thereto, as a horizontal alignment mark at the same time. Then, a cover layer is applied on the patterned layer sequence and a part of the cover layer is removed in order to expose the alignment stripe and expose a region of the layer sequence outside the light-emitting stripe and spaced apart from a light-entrance edge or a light-exit edge of the light-emitting stripe as a vertical alignment mark.
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: December 1, 2020
    Assignee: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
    Inventors: Martin Möhrle, Michael Theurer, Ariane Sigmund, Ute Troppenz
  • Patent number: 10847949
    Abstract: Some embodiments relate to a method for manufacturing a vertical cavity surface emitting laser. The method includes forming an optically active layer over a first reflective layer and forming a second reflective layer over the optically active layer. Forming a masking layer over the second reflective layer, where the masking layer leaves a sacrificial portion of the second reflective layer exposed. A first etch is performed to remove the sacrificial portion of the second reflective layer, defining a second reflector. Forming a first spacer covering outer sidewalls of the second reflector and masking layer. Performing an oxidation process to oxidize a peripheral region of the optically active layer. A second etch is performed to remove a portion of the oxidized peripheral region, defining an optically active region. Forming a second spacer covering outer sidewalls of the first spacer, the optically active region, and the first reflector.
    Type: Grant
    Filed: September 5, 2018
    Date of Patent: November 24, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chen Yu Chen, Ming Chyi Liu, Jhih-Bin Chen
  • Patent number: 10833480
    Abstract: A method of fabricating a gain medium includes growing a p-type layer doped with zinc on a substrate, growing an undoped layer including one or both of InP or InGaAsP on the p-type layer, growing a region that includes multiple quantum wells (MQWs) on the undoped layer, and growing an n-type layer on the region. The undoped layer has a thickness that is sufficient to prevent Zn diffusion from the p-type layer into the region during subsequent growth or wafer fabrication steps.
    Type: Grant
    Filed: July 3, 2019
    Date of Patent: November 10, 2020
    Assignee: Skorpios Technologies, Inc.
    Inventors: John Y. Spann, John Zyskind
  • Patent number: 10811845
    Abstract: Multi-surface emitting mid-IR multiwavelength distributed-feedback quantum cascade ring lasers laid out in a concentric circle are disclosed. The lasers utilize quantum cascade core designs to produce optical gain in the mid-infrared region and may generate several wavelengths simultaneously or sequentially. Methods of making along with methods of using such devices are also disclosed.
    Type: Grant
    Filed: February 21, 2013
    Date of Patent: October 20, 2020
    Assignee: Thorlabs Quantum Electronics, Inc.
    Inventors: Catherine Genevieve Caneau, Feng Xie, Chung-En Zah
  • Patent number: 10811562
    Abstract: A light emitting diode including: a columnar laminated structure 20 in which a first compound semiconductor layer 21, a light emitting layer 23, and a first portion 22A of a second compound semiconductor layer are laminated; a first electrode 31 electrically connected to the first compound semiconductor layer 21; and a second electrode 32. A second portion 22B of the second compound semiconductor layer is formed on the first portion 22A of the second compound semiconductor layer, apart from an edge portion 22a3 of the first portion 22A of the second compound semiconductor layer, the second electrode 32 is formed at least on a top surface of the second portion 22B of the second compound semiconductor layer, and light is outputted at least from the top surface 22b1 and a side surface 22b2 of the second portion 22B of the second compound semiconductor layer.
    Type: Grant
    Filed: October 22, 2015
    Date of Patent: October 20, 2020
    Assignee: SONY CORPORATION
    Inventors: Hidekazu Aoyagi, Takahiro Arakida, Takahiko Kawasaki, Katsutoshi Itou, Makoto Nakashima
  • Patent number: 10784648
    Abstract: A semiconductor device according to the present invention includes a substrate, a semiconductor laser that is provided on an upper surface of the substrate and emits laser light, a waveguide having a first conductive layer provided on the upper surface of the substrate, and a waveguide layer that is provided on the first conductive layer and guides the laser light and an embedment layer provided on the upper surface of the substrate and surrounding the semiconductor laser and the waveguide, wherein on both sides of an end part, of the waveguide, which is connected to the semiconductor laser, an exposed part is provided in which the substrate is exposed from the embedment layer by the embedment layer separated in a waveguide direction of the waveguide, and in the end part, a separation region is provided in which the first conductive layer is separated in the waveguide direction.
    Type: Grant
    Filed: May 29, 2017
    Date of Patent: September 22, 2020
    Assignee: Mitsubishi Electric Corporation
    Inventor: Kazushige Kawasaki
  • Patent number: 10777704
    Abstract: A manufacturing method for a group III nitride semiconductor substrate is provided with a first step of forming a second group III nitride semiconductor layer on a substrate; a second step of forming a protective layer on the second group III nitride semiconductor layer; a third step of selectively forming pits on dislocation portions of the second group III nitride semiconductor layer by gas-phase etching applied to the protective layer and the second group III nitride semiconductor layer; and a fourth step of forming a third group III nitride semiconductor layer on the second group III nitride semiconductor layer and/or the remaining protective layer so as to allow the pits to remain.
    Type: Grant
    Filed: November 1, 2016
    Date of Patent: September 15, 2020
    Assignee: SUMCO CORPORATION
    Inventors: Koji Matsumoto, Toshiaki Ono, Hiroshi Amano, Yoshio Honda
  • Patent number: 10775650
    Abstract: An optical modulator includes a p-type first semiconductor layer (102) formed on a clad layer (101), an insulating layer (103) formed on the first semiconductor layer (102), and an n-type second semiconductor layer (104) formed on the insulating layer (103). The first semiconductor layer (102) is made of silicon or silicon-germanium, and the second semiconductor layer (104) is formed from a III-V compound semiconductor made of three or more materials.
    Type: Grant
    Filed: August 25, 2017
    Date of Patent: September 15, 2020
    Assignee: NIPPON TELEGRAPH AND TELEPHONE CORPORATION
    Inventors: Tatsurou Hiraki, Shinji Matsuo
  • Patent number: 10763644
    Abstract: A lateral current injection electro-optical device includes a slab having a pair of structured, doped layers of III-V semiconductor materials arranged side-by-side in the slab, the pair including an n-doped layer and a p-doped layer, each of the p-doped layer and the n-doped layer includes a two-dimensional photonic crystal, and a separation section extending between the pair of structured layers, the separation section separates the pair of structured layers, the separation section includes current blocking trenches, and an active region of III-V semiconductor gain materials between the current blocking trenches that form a photonic crystal cavity.
    Type: Grant
    Filed: September 16, 2019
    Date of Patent: September 1, 2020
    Assignee: International Business Machines Corporation
    Inventors: Charles Caër, Lukas Czornomaz
  • Patent number: 10763643
    Abstract: An electrically-operated semiconductor laser device and method for forming the laser device are provided. The laser device includes a fin structure to which a waveguide is optically coupled. The waveguide is optically coupled to passive waveguides at either end thereof. The fin structure includes an array of fin elements, each fin element comprising Group III-V materials.
    Type: Grant
    Filed: December 13, 2017
    Date of Patent: September 1, 2020
    Assignees: IMEC VZW, Katholieke Universiteit Leuven, KU LEUVEN R& D, Universiteit Gent
    Inventors: Joris Van Campenhout, Clement Merckling, Maria Ioanna Pantouvaki, Ashwyn Srinivasan, Irina Kulkova
  • Patent number: 10719236
    Abstract: Subject matter disclosed herein may relate to buffers, and may relate more particularly to non-volatile buffers for memory operations.
    Type: Grant
    Filed: November 20, 2015
    Date of Patent: July 21, 2020
    Assignee: ARM Ltd.
    Inventors: Andreas Hansson, Stephan Diestelhorst, Wei Wang, Irenéus Johannes de Jong
  • Patent number: 10720549
    Abstract: In an embodiment a semiconductor layer sequence includes a pre-barrier layer including AlGaN, a pre-quantum well including InGaN having a first band gap, a multi-quantum well structure including a plurality of alternating main quantum wells of InGaN having a second band gap and main barrier layers of AlGaN or AlInGaN, wherein the second band gap is smaller than the first band gap and the main quantum wells are configured to generate a radiation having a wavelength of maximum intensity between 365 nm and 490 nm inclusive, a post-quantum well with a third band gap which is larger than the second band gap, a post-barrier layer including AlGaN or AlInGaN and an electron-blocking layer including AlGaN.
    Type: Grant
    Filed: September 4, 2017
    Date of Patent: July 21, 2020
    Assignee: OSRAM OLED GmbH
    Inventors: Werner Bergbauer, Joachim Hertkorn
  • Patent number: 10720758
    Abstract: An emitter array may comprise a plurality of emitters that includes two adjacent emitters. The ohmic metal layer may include a portion that is shared by, and located between, the two adjacent emitters. The emitter array may comprise a protective layer over the ohmic metal layer. The emitter array may comprise a via through the protective layer to the portion. The via is shared by, and located between, the two adjacent emitters.
    Type: Grant
    Filed: March 25, 2019
    Date of Patent: July 21, 2020
    Assignee: Lumentum Operations LLC
    Inventors: Albert Yuen, Ajit Vijay Barve
  • Patent number: 10714893
    Abstract: Disclosed is an optically pumped vertical cavity laser structure operating in the mid-infrared region, which has demonstrated room-temperature continuous wave operation. This structure uses a periodic gain active region with type I quantum wells comprised of InGaAsSb, and barrier/cladding regions which provide strong hole confinement and substantial pump absorption. A preferred embodiment includes at least one wafer bonded GaAs-based mirror. Several preferred embodiments also include means for wavelength tuning of mid-IR VCLs as disclosed, including a MEMS-tuning element. This document also includes systems for optical spectroscopy using the VCL as disclosed, including systems for detection concentrations of industrial and environmentally important gases.
    Type: Grant
    Filed: July 17, 2018
    Date of Patent: July 14, 2020
    Assignees: Thorlabs, Inc., Praevium Research, Inc.
    Inventors: Vijaysekhar Jayaraman, Kevin Lascola, Stephen Segal, Fredrick Towner, Alex Cable
  • Patent number: 10698237
    Abstract: An optical modulator and a 3D image acquisition apparatus including an optical modulator are provided. The optical modulator is disposed in a multiple quantum well including a plurality of quantum wells and a plurality of quantum barriers, and includes at least one carrier block disposed in the multiple quantum well restricting the carrier movement between the multiple quantum wells.
    Type: Grant
    Filed: February 7, 2018
    Date of Patent: June 30, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chang-young Park, Yong-hwa Park, Sang-hun Lee
  • Patent number: 10686091
    Abstract: A semiconductor device of an embodiment includes first and second semiconductor layers having different conductivity types; a third semiconductor layer interposed between the first and second semiconductor layers; and a fourth semiconductor layer interposed between the second and third semiconductor layers, having a lower doping concentration than that of the first semiconductor layer and the same conductivity type as the first semiconductor layer, wherein the difference in doping concentration between the first semiconductor layer and the fourth semiconductor layer may be greater than 4×E18 atoms/cm3.
    Type: Grant
    Filed: February 10, 2017
    Date of Patent: June 16, 2020
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Jung Hun Oh, Hyung Jo Park