Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region, wherein the active region comprises multiple alternating well layers and barrier layers, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies at a distance of between 15 nm and 60 nm from the upper surface of the active region.

Abstract: Embodiments of the invention relate to a plasmonic laser including a substrate and a coaxial plasmonic cavity formed on the substrate and adapted to facilitate a plasmonic mode. The plasmonic laser further includes an electrical pumping circuit configured to electrically pump the plasmonic laser. The coaxial plasmonic cavity includes a peripheral plasmonic ring structure, a central plasmonic core and a gain structure arranged between the peripheral plasmonic ring structure and the central plasmonic core. The gain structure includes one or more ring-shaped quantum wells as gain material. The one or more ring-shaped quantum wells have a surface that is aligned orthogonal to a surface of the substrate. The electrical pumping circuit is configured to pump the plasmonic laser via the peripheral plasmonic ring structure and the central plasmonic core.

Abstract: A cavity ring-down spectroscopy system and a method of modulating a light beam therein are provided. The cavity ring-down spectroscopy system includes at least one laser that generates a light beam, a first optical modulator positioned to attenuate the light beam from the at least one laser, a second optical modulator positioned to attenuate the light beam from the first optical modulator, a ring-down cavity positioned to receive the light beam from the second optical modulator, and at least one light sensor to detect an intensity of light leaked from the ring-down cavity.

Abstract: A broad area quantum cascade laser includes an optical cavity disposed between two sidewalls, the optical cavity including an active region for producing photons when a current is applied thereto, where the optical cavity is subject to a presence of at least one high order transverse optical mode due to its broad area geometry. The broad area quantum cascade laser may also include an optically lossy material disposed on at least a first portion of one or more of the two sidewalls.

Abstract: The present disclosure describes broadband optical emission sources that include a stack of semiconductor layers, wherein each of the semiconductor layers is operable to emit light of a different respective wavelength; a light source operable to provide optical pumping for stimulated photon emission from the stack; wherein the semiconductor layers are disposed sequentially in the stack such that a first one of the semiconductor layers is closest to the light source and a last one of the semiconductor layers is furthest from the light source, and wherein each particular one of the semiconductor layers is at least partially transparent to the light generated by the other semiconductor layers that are closer to the light source than the particular semiconductor layer. The disclosure also describes various spectrometers that include a broadband optical emission device, and optionally include a tuneable wavelength filter operable to allow a selected pass through.

Abstract: A method to configure an optical device. The method may rely on an optical device that includes two parallel mirrors extending, each, parallel to a reference plane, and an active material extending between the mirrors. An average plane of the active material is parallel to said reference plane, so as to form an optical resonator. The active material is energized so as to non-volatilely alter a refractive index and/or an optical absorption in one or more regions of said material. This results in forming one or more cavities, respectively, in which light can be laterally confined, in-plane with said average plane, in addition to being confined between the mirrors, along a direction perpendicular to said reference plane. Each of the one or more cavities has an altered mode profile compared to a non-altered region of the active material. Related methods and optical devices are also disclosed.

Abstract: Methods for designing a mode-selective optical device including one or more optical interfaces defining an optical cavity include: defining a loss function within a simulation space encompassing the optical device, the loss function corresponding to an electromagnetic field having an operative wavelength within the optical device resulting from an interaction between an input electromagnetic field at the operative wavelength and the one or more optical interfaces of the optical device; defining an initial structure for each of the one or more optical interfaces, each initial structure being defined using a plurality of voxels; determining values for at least one structural parameter and/or at least one functional parameter of the one or more optical interfaces by solving Maxwell's equations; and defining a final structure of the one or more optical interfaces based on the values for the one or more structural and/or functional parameters.

Abstract: A laser diode includes a semiconductor body having a substrate and a semiconductor layer sequence arranged on the substrate, which includes an active zone that generates electromagnetic radiation, wherein the semiconductor body has a first main surface and a second main surface opposite the first main surface and at least one first and second laser facet, which are respectively arranged transversely to the first and second main surfaces, and at least one structured facet region located at a transition between the first main surface and at least one of the first and second laser facets, and the structured facet region includes at least a strained compensation layer or a recess.

Abstract: A light-emitting device includes an emission structure, a current block layer on the emission structure, a reflective layer on the current block layer, a protection layer that covers the reflective layer, and an electrode layer on the protection layer.

Abstract: Disclosed herein are methods, structures, and devices for wafer scale testing of photonic integrated circuits.

Abstract: A design and method for introducing asymmetric crystal strain to control polarization in a tunable VCSEL, either optically or electrically pumped. The invention is especially relevant to wafer- or die-bonded tunable VCSELs. Then, mechanical stress is applied to the half VCSEL device by asymmetric arrangement of metal bond pads.

Abstract: A system includes a waveguide and an edge-emitting laser. The edge-emitting laser is configured to lase coherent light into the waveguide. The edge-emitting laser includes an optical cavity having an active gain section and a passive section. The active gain section is configured to amplify an optical power of light reflecting within the optical cavity. The passive section increases a functional length of the optical cavity such that a total length of the optical cavity reduces fringe interference of the coherent light propagating through the waveguide.

Abstract: A distributed feedback (DFB) semiconductor laser device includes an active layer, a first grating layer and a second grating. The first grating layer has a first grating structure with a first grating period. The second grating layer has a second grating structure with a second grating period substantially different from the first grating period. The active layer, the first grating layer and the second grating layer are vertically stacked, and the equivalent grating period of the DFB semiconductor laser device is (2×P1×P2)/(P1+P2), where P1 and P2 respectively represent the first grating period and the second grating period.

Abstract: The radio antenna comprises a substrate formed of a dielectric material; a ground plane made of an electrically conductive material, the ground plane being arranged on a first face (F2) of the substrate; a resonator configured to convert an incident electrical signal into an electromagnetic wave. The resonator includes a first element (E1) having a first characteristic impedance and a second element (E2) having a second characteristic impedance that is higher than the first characteristic impedance. The first element (E1) is configured to receive the incident electrical signal, the first element (E1) is formed by a strip of electrically conductive material, the strip being arranged on a second face (F1) of the substrate opposite the first face (F2). The second element (E2) is formed by a rectilinear segment, cut in the ground plane and separated from the rest of the ground plane by a slot (202) of fixed width.

Abstract: An LED mounted method includes: providing a circuit substrate having a plurality of conductive pads; through a pick and place module, disposing a plurality of conductors on the conductive pads; disposing a plurality of LED chips on the circuit substrate, with each LED chip being disposed on at least two conductors; projecting a laser source generated by a laser generation module to each LED chip so that the laser source passes through the LED chip and is projected onto at least two conductors; and curing the conductor disposed between the LED chip and the circuit substrate by irradiation of the laser source so that the LED chip is mounted on the circuit substrate.

Abstract: GaN-based nanowire heterostructures have been intensively studied for applications in light emitting diodes (LEDs), lasers, solar cells and solar fuel devices. Surface charge properties play a dominant role on the device performance and have been addressed within the prior art by use of a relatively thick large bandgap AlGaN shell covering the surfaces of axial InGaN nanowire LED heterostructures has been explored and shown substantial promise in reducing surface recombination leading to improved carrier injection efficiency and output power. However, these lead to increased complexity in device design, growth and fabrication processes thereby reducing yield/performance and increasing costs for devices. Accordingly, there are taught self-organising InGaN/AlGaN core-shell quaternary nanowire heterostructures wherein the In-rich core and Al-rich shell spontaneously form during the growth process.

Abstract: A vertical cavity light-emitting element comprises a substrate, a first multilayer reflector formed on the substrate, a semiconductor structure layer formed on the first multilayer reflector and including a light emitting layer, a second multilayer reflector formed on the semiconductor structure layer and constituting a resonator together with the first multilayer reflector, and a light guide layer configured to form a light guide structure including a center region extending in a direction perpendicular to the upper surface of said substrate between the first and second multilayer reflectors and including a light emission center of the light-emitting layer and a peripheral region provided around the center region and having a smaller optical distance between the first and second multilayer reflectors than that in the center region. The second multilayer reflector has a flatness property over the center region and the peripheral region.

Abstract: A coupled-cavity vertical-cavity surface-emitting laser (VCSEL) is disclosed. The coupled-cavity VCSEL includes a passive cavity and an additional distributed Bragg Reflector (DBR) not found in conventional VCSELs, all in a monolithic device. By including these two elements, the photon lifetime may be increased by a factor of approximately ten, leading to a reduction in the laser linewidth by a factor of approximately 100 compared to conventional VCSELs. The two additional elements also serve to ensure single-mode operation of the coupled-cavity VCSEL.

Abstract: A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.

Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor waveguide including a slab section, a rib section extending above the slab section, raised ridges extending above the slab section on both sides of the rib section, and a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or fully p-doped in each cross-section along the semiconductor waveguide. Electrical contact may be made to the doped material via contacts on the raised ridges, and electrical contact may be made to the rib section via periodically arranged sections of the semiconductor waveguide. A cross-section of both the rib section and the slab section in the periodically arranged sections may be mostly n-doped with an undoped portion or mostly p-doped with an undoped portion.

Abstract: A semiconductor device includes a first pair of nitride semiconductor regions, and a current confinement region which includes a first portion, a second portion disposed on a side of the first portion, and a third portion disposed on another side of the first portion. A width of the second portion is larger than a width of the first portion, the width of the second portion is larger than a width between the first pair of nitride semiconductor regions, and both ends of the second portion are covered by the first pair of nitride semiconductor regions, respectively.

Abstract: A photonic integrated circuit including a photonic device and a gain element, said gain element formed by a process including: depositing by epitaxy a first doped layer onto a substrate; depositing by epitaxy an active layer capable of optical gain onto the first doped layer; depositing by epitaxy a second doped layer onto the active layer; pattern etching at least the second doped layer and the active layer to form a first ridge; and depositing by epitaxy a current blocking layer laterally adjacent to the first ridge at least partially filling the volume of active layer that was removed by the pattern etching; wherein the current blocking layer forms a portion of the photonic device.

Abstract: What is shown is a method for manufacturing a semiconductor light source. The semiconductor light source has a substrate and a layer sequence arranged above the substrate, the same having a light-emitting layer and an upper boundary layer arranged above the light-emitting layer. The layer sequence is patterned in order to form a light-emitting stripe for defining the semiconductor light source and an alignment stripe, extending in parallel thereto, as a horizontal alignment mark at the same time. Then, a cover layer is applied on the patterned layer sequence and a part of the cover layer is removed in order to expose the alignment stripe and expose a region of the layer sequence outside the light-emitting stripe and spaced apart from a light-entrance edge or a light-exit edge of the light-emitting stripe as a vertical alignment mark.

Abstract: A semiconductor laser device includes a semiconductor substrate, a resonator unit formed on the semiconductor substrate and having an active layer, a diffraction grating formed on or underneath the active layer, a front facet of an inverted mesa slope, and a rear facet, an anti-reflection coating film formed on the front facet, a reflective film formed on the rear facet, an upper electrode formed on the resonator unit, and a lower electrode formed underneath the semiconductor substrate, wherein a length in a resonator direction of the resonator unit is shorter than a length in the resonator direction of the semiconductor substrate, and a laser beam is emitted from the front facet.

Abstract: Some embodiments relate to a method for manufacturing a vertical cavity surface emitting laser. The method includes forming an optically active layer over a first reflective layer and forming a second reflective layer over the optically active layer. Forming a masking layer over the second reflective layer, where the masking layer leaves a sacrificial portion of the second reflective layer exposed. A first etch is performed to remove the sacrificial portion of the second reflective layer, defining a second reflector. Forming a first spacer covering outer sidewalls of the second reflector and masking layer. Performing an oxidation process to oxidize a peripheral region of the optically active layer. A second etch is performed to remove a portion of the oxidized peripheral region, defining an optically active region. Forming a second spacer covering outer sidewalls of the first spacer, the optically active region, and the first reflector.

Abstract: A method of fabricating a gain medium includes growing a p-type layer doped with zinc on a substrate, growing an undoped layer including one or both of InP or InGaAsP on the p-type layer, growing a region that includes multiple quantum wells (MQWs) on the undoped layer, and growing an n-type layer on the region. The undoped layer has a thickness that is sufficient to prevent Zn diffusion from the p-type layer into the region during subsequent growth or wafer fabrication steps.

Abstract: Multi-surface emitting mid-IR multiwavelength distributed-feedback quantum cascade ring lasers laid out in a concentric circle are disclosed. The lasers utilize quantum cascade core designs to produce optical gain in the mid-infrared region and may generate several wavelengths simultaneously or sequentially. Methods of making along with methods of using such devices are also disclosed.

Abstract: A light emitting diode including: a columnar laminated structure 20 in which a first compound semiconductor layer 21, a light emitting layer 23, and a first portion 22A of a second compound semiconductor layer are laminated; a first electrode 31 electrically connected to the first compound semiconductor layer 21; and a second electrode 32. A second portion 22B of the second compound semiconductor layer is formed on the first portion 22A of the second compound semiconductor layer, apart from an edge portion 22a3 of the first portion 22A of the second compound semiconductor layer, the second electrode 32 is formed at least on a top surface of the second portion 22B of the second compound semiconductor layer, and light is outputted at least from the top surface 22b1 and a side surface 22b2 of the second portion 22B of the second compound semiconductor layer.

Abstract: A semiconductor device according to the present invention includes a substrate, a semiconductor laser that is provided on an upper surface of the substrate and emits laser light, a waveguide having a first conductive layer provided on the upper surface of the substrate, and a waveguide layer that is provided on the first conductive layer and guides the laser light and an embedment layer provided on the upper surface of the substrate and surrounding the semiconductor laser and the waveguide, wherein on both sides of an end part, of the waveguide, which is connected to the semiconductor laser, an exposed part is provided in which the substrate is exposed from the embedment layer by the embedment layer separated in a waveguide direction of the waveguide, and in the end part, a separation region is provided in which the first conductive layer is separated in the waveguide direction.

Abstract: An optical modulator includes a p-type first semiconductor layer (102) formed on a clad layer (101), an insulating layer (103) formed on the first semiconductor layer (102), and an n-type second semiconductor layer (104) formed on the insulating layer (103). The first semiconductor layer (102) is made of silicon or silicon-germanium, and the second semiconductor layer (104) is formed from a III-V compound semiconductor made of three or more materials.

Abstract: A manufacturing method for a group III nitride semiconductor substrate is provided with a first step of forming a second group III nitride semiconductor layer on a substrate; a second step of forming a protective layer on the second group III nitride semiconductor layer; a third step of selectively forming pits on dislocation portions of the second group III nitride semiconductor layer by gas-phase etching applied to the protective layer and the second group III nitride semiconductor layer; and a fourth step of forming a third group III nitride semiconductor layer on the second group III nitride semiconductor layer and/or the remaining protective layer so as to allow the pits to remain.

Abstract: An electrically-operated semiconductor laser device and method for forming the laser device are provided. The laser device includes a fin structure to which a waveguide is optically coupled. The waveguide is optically coupled to passive waveguides at either end thereof. The fin structure includes an array of fin elements, each fin element comprising Group III-V materials.

Abstract: A lateral current injection electro-optical device includes a slab having a pair of structured, doped layers of III-V semiconductor materials arranged side-by-side in the slab, the pair including an n-doped layer and a p-doped layer, each of the p-doped layer and the n-doped layer includes a two-dimensional photonic crystal, and a separation section extending between the pair of structured layers, the separation section separates the pair of structured layers, the separation section includes current blocking trenches, and an active region of III-V semiconductor gain materials between the current blocking trenches that form a photonic crystal cavity.

Abstract: An emitter array may comprise a plurality of emitters that includes two adjacent emitters. The ohmic metal layer may include a portion that is shared by, and located between, the two adjacent emitters. The emitter array may comprise a protective layer over the ohmic metal layer. The emitter array may comprise a via through the protective layer to the portion. The via is shared by, and located between, the two adjacent emitters.

Abstract: In an embodiment a semiconductor layer sequence includes a pre-barrier layer including AlGaN, a pre-quantum well including InGaN having a first band gap, a multi-quantum well structure including a plurality of alternating main quantum wells of InGaN having a second band gap and main barrier layers of AlGaN or AlInGaN, wherein the second band gap is smaller than the first band gap and the main quantum wells are configured to generate a radiation having a wavelength of maximum intensity between 365 nm and 490 nm inclusive, a post-quantum well with a third band gap which is larger than the second band gap, a post-barrier layer including AlGaN or AlInGaN and an electron-blocking layer including AlGaN.

Abstract: Subject matter disclosed herein may relate to buffers, and may relate more particularly to non-volatile buffers for memory operations.

Abstract: Disclosed is an optically pumped vertical cavity laser structure operating in the mid-infrared region, which has demonstrated room-temperature continuous wave operation. This structure uses a periodic gain active region with type I quantum wells comprised of InGaAsSb, and barrier/cladding regions which provide strong hole confinement and substantial pump absorption. A preferred embodiment includes at least one wafer bonded GaAs-based mirror. Several preferred embodiments also include means for wavelength tuning of mid-IR VCLs as disclosed, including a MEMS-tuning element. This document also includes systems for optical spectroscopy using the VCL as disclosed, including systems for detection concentrations of industrial and environmentally important gases.

Abstract: An optical modulator and a 3D image acquisition apparatus including an optical modulator are provided. The optical modulator is disposed in a multiple quantum well including a plurality of quantum wells and a plurality of quantum barriers, and includes at least one carrier block disposed in the multiple quantum well restricting the carrier movement between the multiple quantum wells.

Abstract: A semiconductor device of an embodiment includes first and second semiconductor layers having different conductivity types; a third semiconductor layer interposed between the first and second semiconductor layers; and a fourth semiconductor layer interposed between the second and third semiconductor layers, having a lower doping concentration than that of the first semiconductor layer and the same conductivity type as the first semiconductor layer, wherein the difference in doping concentration between the first semiconductor layer and the fourth semiconductor layer may be greater than 4×E18 atoms/cm3.

Abstract: In a semiconductor laser according to an embodiment of the present disclosure, a ridge part has a structure in which a plurality of gain regions and a plurality of Q-switch regions are each disposed alternately with each of separation regions being interposed therebetween in an extending direction of the ridge part. The separation regions each have a separation groove that separates from each other, by a space, the gain region and the Q-switch region adjacent to each other. The separation groove has a bottom surface at a position, in a second semiconductor layer, higher than a part corresponding to a foot of each of both sides of the ridge part.

Abstract: A nitride-based light-emitting device includes, on a GaN substrate: a first-conductivity-side first semiconductor layer; an active layer; and a second-conductivity-side first semiconductor layer, in the stated order, and further includes an electron barrier layer of a second conductivity type between the active layer and the second-conductivity-side first semiconductor layer, the electron barrier layer including a nitride-based semiconductor containing at least Al. The electron barrier layer has a first region in which an Al composition changes. The Al composition in the first region monotonically increases in a direction from the active layer to the second-conductivity-side first semiconductor layer. An impurity concentration in the second-conductivity-side first semiconductor layer is lower in a region nearer the electron barrier layer than in a region farther from the electron barrier layer.

Abstract: A semiconductor device includes an upper and lower mirror. At least one active region for light generation is between the upper and lower mirror. At least one cavity spacer layer is between at least one of the upper and lower mirror and the active region. The device includes an inner mode confinement region and an outer current blocking region. A depleted heterojunction current blocking region (DHCBR) including a depleting impurity is within the outer current blocking region of ?1 of the upper mirror, lower mirror, and the first active region. A middle layer including a conducting channel is within the inner mode confinement region that is framed by the DHCBR. The DHCBR forces current flow into the conducting channel during normal operation of the light source.

Abstract: A semiconductor light emitting element includes a first conductive layer, a second conductive layer, and an active layer provided between the first conductive layer and the second conductive layer. The first conductive layer has a current constriction structure, a current injection region being constricted in the current constriction structure. The active layer includes a plurality of quantum well layers, a first light emission wavelength being in a wavelength range of an intensity peak of an entire light emission spectrum, the first light emission wavelength corresponding to a light emission recombination level energy gap of a first quantum well layer of the plurality of quantum well layers, the first quantum well layer being provided at a position closest to the current constriction structure.

Abstract: A nitride semiconductor light-emitting device comprises a substrate; a first conductivity type semiconductor layer formed on the substrate; a high-resistance semiconductor layer formed on the first conductivity type semiconductor layer; an active layer formed on the high-resistance semiconductor layer and having multiple quantum wells; and a second conductivity type semiconductor layer formed on the active layer. A first v-pit structure is formed between the high-resistance semiconductor layer and the first conductivity type semiconductor layer, and a second v-pit structure is formed between the active layer and the second conductivity type semiconductor layer. The second v-pit structure is formed such that a lowest part of the second conductivity type semiconductor layer contacts a lowest quantum well of the multiple quantum wells of the active layer through the second v-pit structure.

Abstract: Apparatus comprise a semiconductor waveguide extending along a longitudinal axis and including a first waveguide section and a second waveguide section, wherein a lateral refractive index difference defining the semiconductor waveguide is larger for the first waveguide section than for the second waveguide section, and an output facet situated on the longitudinal axis of the semiconductor waveguide so as to emit a laser beam propagating in the semiconductor waveguide, wherein the first waveguide section is situated between the second waveguide section and the output facet and wherein the lateral refractive index difference suppresses emission of higher order transverse modes in the laser beam emitted by the output facet.

Abstract: A method of producing a plurality of laser diodes includes providing a plurality of laser bars in a compound, wherein the laser bars each include a plurality of laser diode elements arranged side by side, the laser diode elements each have a common substrate and a semiconductor layer sequence arranged on the substrate, and a splitting of the compound at a longitudinal separation line running between two adjacent laser bars in each case leads to formation of laser facets of the laser diodes to be produced, and structuring the compound at at least one longitudinal separation line, wherein a strained compensation layer is applied to the semiconductor layer sequence at least at the longitudinal separation line or the semiconductor layer sequence is at least partially removed.

Abstract: A device including an absorber layer that can be deposited on top of a bottom contact layer. Furthermore, a semi-intrinsic layer with an energy gap wider than that of the absorber layer can be deposited on top of the absorber layer. A top contact layer can be deposited on top of the semi-intrinsic layer. A conduction band and a valence band energy alignment can be positioned between the absorber layer and the top contact layer, and configured to allow photoexcited minority carriers to be collected while the flow of majority carriers from the absorber are blocked. At least one mesa can be formed by processing and removing layered materials to a depth at least near the bottom of the absorber layer. Finally, a shoulder can be formed in the at least one mesa within the semi-intrinsic layer by processing and removing the layered materials.

Abstract: Test equipment that is able to concurrently evaluate two or more optical modules each processing a wavelength multiplexed signal that multiplexes optical signals attributed to wavelengths different from each other. The test equipment provides a first test station and a second test station. After selecting one of the wavelengths, the first test station performs a first evaluation for an optical signal attributed to the one of the wavelengths and coming from the first optical module, and the second station concurrently performs a second evaluation for an optical single with the one of the wavelengths and coming from the second optical module. Thereafter, the first test station performs the first evaluation for the optical signal coming from the second optical module, while, the second test station performs the second evaluation for the optical signal coming from the first optical module.

Abstract: A group III-nitride semiconductor device comprises a light emitting semiconductor structure comprising a p-type layer and an n-type layer operable as a light emitting diode or laser. On top of the p-type layer there is arranged an n+ or n++-type layer of a group III-nitride, which is transparent to the light emitted from the underlying semiconductor structure and of sufficiently high electrical conductivity to provide lateral spreading of injection current for the light-emitting semiconductor structure.

Abstract: A lateral current injection electro-optical device includes a slab having a pair of structured, doped layers of III-V semiconductor materials arranged side-by-side in the slab, the pair including an n-doped layer and a p-doped layer, each of the p-doped layer and the n-doped layer includes a two-dimensional photonic crystal, and a separation section extending between the pair of structured layers, the separation section separates the pair of structured layers, the separation section includes current blocking trenches, and an active region of III-V semiconductor gain materials between the current blocking trenches that form a photonic crystal cavity.