Abstract: A terahertz quantum cascade laser (THz-QCL) element operable at an unexplored frequency is obtained. A crystal of a nitride semiconductor is used to fabricate a repeated set of unit structures into a super lattice. Each unit structure includes a first barrier layer, a first well layer, a second barrier layer, and a second well layer disposed in this order. An energy level structure for electrons under a bias electric field has a mediation level, an upper lasing level, and a lower lasing level. The energy value of the mediation level is close to the energy value of either an upper lasing level or a lower lasing level, each belonging to either the unit structure or the other unit structure adjacent thereto, and is separated from the energy value of the other level by at least the energy value of a longitudinal-optical (LO) phonon exhibited by the crystal.

Abstract: A semiconductor light emitting device including an active layer, a compound semiconductor layer on the active layer, a contact layer on the compound semiconductor layer, and an electrode on the contact layer, where the contact layer is substantially the same size as the electrode.

Abstract: A surface emitting laser operable to change a wavelength of emitted light includes a first reflecting mirror, a second reflecting mirror, wherein a cavity is formed between the first reflecting mirror and the second reflecting mirror along the optical axis of the surface emitting laser, an active layer formed within the cavity, a region formed within the cavity, and a movable part situated within the region, the movable part having a refractive index different from a refractive index of the region. The wavelength of emitted light is changeable by changing the position of the movable part along the direction of the optical axis in the region.

Abstract: An ohmic electrode layer is disposed on a second main surface of a silicon carbide substrate, and a metal electrode layer is disposed on the ohmic electrode layer. A notch is formed along at least one pair of sides, facing each other, of a periphery of the second main surface of the silicon carbide substrate. The cross-section of the notch orthogonal to a side of the second main surface has a corner. In the cross-section, a thickness of the silicon carbide substrate at an edge thereof under which the notch is formed is smaller than a thickness of the silicon carbide substrate in a region under which the notch is not formed, and larger than a thickness of the silicon carbide substrate in a region under which a bottom of the corner is formed.

Abstract: Provided are a high-speed superluminescent diode, a method of manufacturing the same, and a wavelength-tunable external cavity laser including the same. The superluminescent diode includes a substrate having an active region and an optical mode size conversion region, waveguides including an ridge waveguide in the active region and a deep ridge waveguide in the optical mode size conversion region connected to the active waveguide, an electrode disposed on the ridge waveguide; planarizing layers disposed on sides of the ridge waveguide and the deep ridge waveguide on the substrate, and a pad electrically connected to the electrode, the pad being disposed on the planarizing layers outside the active waveguide.

Abstract: A eutectic metal layer (e.g., gold/tin) bonds a carrier wafer structure to a device wafer structure. In one example, the device wafer structure includes a silicon substrate upon which an epitaxial LED structure is disposed. A layer of silver is disposed on the epitaxial LED structure. The carrier wafer structure includes a conductive silicon substrate covered with an adhesion layer. A layer of non-reactive barrier metal (e.g., titanium) is provided between the silver layer and the eutectic metal to prevent metal from the eutectic layer (e.g., tin) from diffusing into the silver during wafer bonding. During wafer bonding, the wafer structures are pressed together and maintained at more than 280° C. for more than one minute. Use of the non-reactive barrier metal layer allows the total amount of expensive platinum used in the manufacture of a vertical blue LED manufactured on silicon to be reduced, thereby reducing LED manufacturing cost.

Abstract: It is the object of the present invention to specify a light source with high efficiency and high eye safety at the same time. For this purpose, the active layer (10), the first cladding layer (14), the first waveguide layer (12), the second waveguide layer (16), and the second cladding layer (18) should be designed such that 0.01 ?m?dwL?1.0 ?m and ?n?0.04, where dwL is the sum total of the layer thickness of the first waveguide layer (12), the layer thickness of the active layer (10), and the layer thickness of the second waveguide layer (16) and ?n is a maximum of the refractive index difference between the first cladding layer (14) and the first waveguide layer (12) and the refractive index difference between the second waveguide layer (16) and the second cladding layer (18).

Abstract: Embodiments of present invention are directed to near infrared (IR) laser-induced vibrational absorption systems and methods for material detection. According to one embodiment, a system for detecting materials may include: at least one laser configured to output light in the near IR spectrum so as to excite at least one vibrational overtone frequency, at least one combination band frequency, or a combination thereof, of a sample comprised of one or more of materials; a detector configured to detect a physical phenomenon of the sample in response to laser excitation; and an analyzer configured to the analyze the detected physical phenomenon and to identify the one or more materials based comparison of the detected signatures with known signatures of one more materials.

Abstract: Disclosed is a light emitting device including a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising quantum well layers and quantum barrier layers, wherein each of the quantum well barrier layers comprises first barrier layers and a second barrier layer disposed between the first barrier layers, and an energy bandgaps of the second barrier layer is larger than energy bandgaps of the quantum well layers and smaller than energy bandgaps of the first barrier layers.

Abstract: Dilute nitride III-V semiconductor materials may be formed by substituting As atoms for some N atoms within a previously formed nitride material to transform at least a portion of the previously formed nitride material into a dilute nitride III-V semiconductor material that includes arsenic. Such methods may be employed in the fabrication of photoactive devices, such as photovoltaic cells and photoemitters. The methods may be carried out within a deposition chamber, such as a metalorganic chemical vapor deposition (MOCVD) or a hydride vapor phase epitaxy (HVPE) chamber.

Abstract: An edge-emitting etched-facet optical semiconductor structure includes a substrate, an active multiple quantum well (MQW) region formed on the substrate, a ridge waveguide formed over the MQW region extending in substantially a longitudinal direction between a waveguide first etched end facet disposed in a first window and a waveguide second etched end facet disposed in a second window, and first and second trenches having non-uniform widths extending in substantially the longitudinal direction between the first and second windows.

Abstract: A light-emitting element includes a light-emitting layer, and an optical function film. The light-emitting layer is configured to include a first plane with a first electrode, a second plane with a second electrode, and a circumferential plane connecting the first and second planes, the second plane being opposing to the first plane, and the light-emitting layer being made of a semiconductor. The optical function film is configured to include a reflection layer being able to reflect light coming from the light-emitting layer, the reflection layer being provided with first and second regions, the first region covering the second plane and the circumferential plane, the second region protruding from the first region to an outside of the light-emitting layer to expose an end plane thereof.

Abstract: A method for realizing a semiconductor waveguide and an ultra-low-loss dielectric waveguide disposed on the same substrate is disclosed. The method includes forming a partial dielectric waveguide structure on the substrate, wherein the dielectric waveguide is annealed to reduce hydrogen incorporation, and wherein the top cladding of the dielectric waveguide is only partially formed by a first dielectric layer. A second substrate comprising a semiconductor layer having a second dielectric layer disposed on its top surface is bonded to the first substrate such that the first and second dielectric layers collectively form the complete top cladding for the dielectric waveguide. The second substrate is then removed and the semiconductor layer is patterned to define the semiconductor waveguide core.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; an intermediate layer formed on the substrate; a transparent bonding layer; a first semiconductor window layer bonded to the semiconductor layer through the transparent bonding layer; and a light-emitting stack formed on the first semiconductor window layer. The intermediate layer has a refractive index between the refractive index of the substrate and the refractive index of the first semiconductor window layer.

Abstract: A method of removing at least one oxide from a surface of a body of semiconductor material is disclosed. The method includes arranging the body in a vacuum chamber and maintaining a temperature of the body in the vacuum chamber within a predetermined range, or substantially at a predetermined value, while exposing said surface to a flux of indium atoms. Corresponding methods of processing an oxidized surface of a body of semiconductor material to prepare the surface for epitaxial growth of at least one epitaxial layer or film over said surface, and methods of manufacturing a semiconductor device are also disclosed.

Abstract: A vertical cavity surface emitting laser includes: a substrate; a first mirror layer; an active layer; a second mirror layer; a first electrode which is electrically connected to the first mirror layer; a second electrode which is electrically connected to the second mirror layer; and a pad which is electrically connected to the second electrode, in which the first mirror layer, the active layer, and the second mirror layer configure a laminated body, the laminated body includes a resonance portion, an insulation layer is provided on a side surface of the laminated body, in a plan view, the insulation layer has a shape line-symmetrical with respect to a virtual straight line passing through a center of the resonance portion, the pad is provided over the insulation layer, and in the plan view, the pad is only provided on one side of the virtual straight line.

Abstract: A method of fabrication of a micro-optics device included providing a layer of material; patterning the layer of material by one or more of: locally unzipping and desorbing molecules thereof, with a nano-scale dimensioned probe, to obtain a curved surface for the layer of material, the curved surface having a curved profile in a plane section; and completing a layer structure perpendicular to the plane section by providing one or more additional layers of material in contact with the curved surface to obtain the micro-optics device, wherein the micro-optics device has the layer structure, with a given layer thereof comprising a defect delimited by two surfaces, wherein one of the two surfaces is the curved surface.

Abstract: The present invention uses vertical-cavity surface-emitting lasers (VCSELs) as illumination source for simultaneous imaging of blood flow and tissue oxygenation dynamics in vivo, or a means to monitor neural activity in brain slices ex vivo. The speckle pattern on the brain tissue due to a VCSEL's coherence properties is the main challenge to producing low-noise high-brightness illumination, required for evaluating tissue oxygenation. Moreover, using oxide-confined VCSELs we show a fast switching from a single-mode operation scheme to a special multi-modal, multi-wavelength rapid sweep scheme. The multi-modal, multi-wavelength rapid sweep scheme reduces noise values to within a factor of 40% compared to non-coherent LED illumination, enabling high-brightness VCSELs to act as efficient miniature light sources for various brain imaging modalities and other imaging applications. These VCSELs are promising for long-term portable continuous monitoring of brain dynamics in freely moving animals.

Abstract: A vertical cavity surface emitting laser includes: a substrate; and a laminated body which is provided over the substrate, wherein the laminated body includes a first mirror layer, an active layer, and a second mirror layer, in a plan view, the laminated body includes a first distortion imparting portion, a second distortion imparting portion, and a resonance portion which is provided between the first distortion imparting portion and the second distortion imparting portion and resonates light generated by the active layer, and an angle formed by a side surface of the first distortion imparting portion and an upper surface of the substrate, and an angle formed by a side surface of the second distortion imparting portion and the upper surface of the substrate are greater than an angle formed by a side surface of the resonance portion and the upper surface of the substrate.

Abstract: In an embodiment, a laser chip includes a laser, an optical amplifier, a first electrode, and a second electrode. The laser includes an active region. The optical amplifier is integrated in the laser chip in front of and in optical communication with the laser. The first electrode is electrically coupled to the active region. The second electrode is electrically coupled to the optical amplifier. The first electrode and the second electrode are configured to be electrically coupled to a common direct modulation source.

Abstract: A surface emitting laser element includes plural surface emitting lasers provided on a substrate. Each of the plural surface emitting lasers includes a first reflection mirror provided on the substrate; an active layer provided on the first reflection mirror; a wavelength adjustment region provided on the active layer; and a second reflection mirror provided on the wavelength adjustment region. The wavelength adjustment region includes a phase adjustment layer and a wavelength adjustment layer provided on the phase adjustment layer. A thickness of the wavelength adjustment region is approximately an odd multiple of a wavelength of emitted light divided by four. A thickness of the phase adjustment layer is approximately an even multiple of the wavelength of the emitted light divided by four. A thickness of the wavelength adjustment layer is different from a thickness of a wavelength adjustment layer of at least one of the other surface emitting lasers.

Abstract: A method of manufacturing a light-emitting diode package is illustrated. A light-emitting diode chip is manufactured. A material layer is formed on side surfaces and a rear surface of the light-emitting diode chip. The material layer is then oxidized to convert the material layer into an oxidized layer to form a reflective layer on the side surfaces and the rear surface of the light-emitting diode chip. The light-emitting diode chip is packaged.

Abstract: A semiconductor light emitting element includes a substrate including GaN, a first cladding layer provided over the substrate, a quantum well active layer provided over the first cladding layer, a second cladding layer provided over the quantum well active layer, and a first refractive index correction layer provided between the substrate and the first cladding layer. The first refractive index correction layer includes a layer of In1-x-yAlyGaxN (where x+y<1), and x and y satisfy the relations x/1.05+y/0.69>1, x/1.13+y/0.49>1, or x/1.54+y/0.24>1, and the relations x/0.91+y/0.75?1 and x/1.08+y/0.91?1.

Abstract: A method for producing a thin-film semiconductor body is provided. A growth substrate is provided. A semiconductor layer with funnel-shaped and/or inverted pyramid-shaped recesses is epitaxially grown onto the growth substrate. The recesses are filled with a semiconductor material in such a way that pyramid-shaped outcoupling structures arise. A semiconductor layer sequence with an active layer is applied on the outcoupled structures. The active layer is suitable for generating electromagnetic radiation. A carrier is applied onto the semiconductor layer sequence. At least the semiconductor layer with the funnel-shaped and/or inverted pyramid-shaped recesses is detached, such that the pyramid-shaped outcoupling structures are configured as projections on a radiation exit face of the thin-film semiconductor body.

Abstract: A semiconductor laser device includes an n-type semiconductor substrate, an n-type cladding layer laminated on the semiconductor substrate, an n-side light guiding layer laminated on the n-type cladding layer, an active layer laminated on the n-side light guiding layer, a p-side light guiding layer laminated on the active layer, and a p-type cladding layer laminated on the p-side light guiding layer. The sum of the thicknesses of the n-side and p-side light guiding layers is such that the first and higher order modes of oscillation can occur in the crystal growth direction. A low refractive index layer having a lower refractive index than the n-type cladding layer is located between the n-side light guiding layer and the n-type cladding layer, and the active layer is displaced from the lateral center plane of the light guiding layer structure toward the p-type cladding layer.

Abstract: An optoelectronic semiconductor chip, based on a nitride material system, comprising at least one active quantum well, wherein during operation electromagnetic radiation is generated in the active quantum well, the active quantum well comprises N successive zones in a direction parallel to a growth direction z of the semiconductor chip, N being a natural number greater than or equal to 2, the zones are numbered consecutively in a direction parallel to the growth direction z, at least two of the zones have average aluminium contents k which differ from one another, and the active quantum well fulfils the condition: 50??(35?k(z))dz?2.5N?1.5?dz?120.

Abstract: A semiconductor laser device includes an n-type clad layer, a first p-type clad layer and a ridge stripe. The device also includes an active layer interposed between the n-type clad layer and the first p-type clad layer, and a current-blocking layer formed on side surfaces of the ridge stripe. The ridge stripe of the device includes a second p-type clad layer formed into a ridge stripe shape on the opposite surface of the first p-type clad layer from the n-type clad layer. The ridge stripe is formed such that a first ridge width as the width of a surface of the second p-type clad layer exists on the same side as the first p-type clad layer and a second ridge width as the width of a surface of the second p-type clad layer exists on the opposite side from the first p-type clad layer.

Abstract: [Object] [Means for Solving Problem] A method for manufacturing of a semiconductor light emitting element has; forming a semiconductor layer laminated of a first conductivity type semiconductor layer, a light emitting layer and a second conductivity type semiconductor layer, in this order, forming an electrode including a silver-containing layer in contact with an upper surface of the second conductivity type semiconductor layer, forming an insulating layer coating over at least a side surface of the silver-containing layer from the upper surface of the second conductivity type semiconductor layer by an atomic layer deposition method.

Abstract: One example includes a laser system. The system can include a first electrode to transmit first electrical carriers into an active region via a first waveguide region in response to a current signal. The system also includes a second electrode to transmit second electrical carriers into the active region via a second waveguide region in response to the current signal. The first and second electrical carriers can be combined in the active region to emit photons to generate an optical signal. The system further includes a third electrode responsive to a signal to affect a concentration of third electrical carriers in a device layer located proximal to the second waveguide region to modulate an optical characteristic of the optical signal.

Abstract: A light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, an active layer, a dielectric layer and an electrode. The active layer disposed between the first type semiconductor layer and the second type semiconductor layer. The active layer has at least one threading dislocation therein. The dielectric layer is disposed on the second type semiconductor layer. The dielectric layer has at least one first opening therein to expose a part of the second type semiconductor layer. The vertical projection of the threading dislocation on the dielectric layer is separated from the first opening. The electrode partially disposed on the dielectric layer and electrically coupled with the exposed part of the second type semiconductor layer through the opening.

Abstract: The embodiment relates to a light emitting device and a light emitting device package, wherein the light emitting device includes a first conduction type semiconductor layer, an active layer formed on the first conduction type semiconductor layer, and a second conduction type semiconductor layer formed on the active layer, wherein the active layer includes a quantum well layer and a quantum barrier layer, and a face direction lattice constant of the first conduction type semiconductor layer or the second conduction type semiconductor layer is greater than the face direction lattice constant of the quantum barrier layer and smaller than the face direction lattice constant of the quantum well layer.

Abstract: A light emitting diode (LED) comprises an n-type Group III-V semiconductor layer, an active layer adjacent to the n-type Group III-V semiconductor layer, and a p-type Group III-V semiconductor layer adjacent to the active layer. The active layer includes one or more V-pits. A portion of the p-type Group III-V semiconductor layer is in the V-pits. A p-type dopant injection layer provided during the formation of the p-type Group III-V layer aids in providing a predetermined concentration, distribution and/or uniformity of the p-type dopant in the V-pits.

Abstract: Three-dimensional electrostatic discharge (ESD) semiconductor devices are fabricated together with three-dimensional non-ESD semiconductor devices. For example, an ESD diode and FinFET are fabricated on the same bulk semiconductor substrate. A spacer merger technique is used in the ESD portion of a substrate to create double-width fins on which the ESD devices can be made larger to handle more current.

Abstract: A strain-balanced photodetector is provided for detecting infrared light at an extended cutoff wavelength in the range of 4.5 ?m or more. An InAsSb absorber layer has an Sb content is grown in a lattice-mismatched condition to a GaSb substrate, and a plurality of GaAs strain-compensating layers are interspersed within the absorber layer to balance the strain of the absorber layer due to the lattice mismatch. The strain-compensation layers allow the absorber to achieve a thickness exhibiting sufficient absorption efficiency while extending the cutoff wavelength beyond that possible in a lattice-matched state. Additionally, the strain-compensation layers are sufficiently thin to be substantially quantum-mechanically transparent such that they do not substantially affect the transmission efficiency of the absorber. The photodetector is preferably formed as a majority carrier filter photodetector exhibiting minimal dark current, and may be provided individually or in a focal plane array.

Abstract: A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.

Abstract: A vertical GaN-based blue LED has an n-type GaN layer that was grown over a ZnS layer that in turn was grown directly on a silicon substrate. In one example, the ZnS layer is a transitional buffer layer that is 50 nm thick, and the n-type GaN layer is at least 2000 nm thick. Growing the n-type GaN layer on the ZnS buffer layer reduces lattice defect density in the n-type layer. The ZnS buffer layer provides a good lattice constant match with the silicon substrate and provides a compound polar template for subsequent GaN growth. After the epitaxial layers of the LED are formed, a conductive carrier is wafer bonded to the structure. The silicon substrate and the ZnS buffer layer are then removed. Electrodes are added and the structure is singulated to form finished LED devices.

Abstract: A light-emitting array comprises a plurality of light-emitting elements, wherein each of the plurality of light-emitting elements comprises a first semiconductor stack; and a plurality of bridge structures connected to the plurality of light-emitting elements, wherein the plurality of light-emitting elements are spaced apart by the plurality of bridge structures, wherein each of the plurality of bridge structures comprise a second semiconductor stack which has the same epitaxial stack as the first semiconductor stack.

Abstract: A light receiving element includes a core configured to propagate a signal light, a first semiconductor layer having a first conductivity type, the first semiconductor layer being configured to receive the signal light from the core along a first direction in which the core extends, an absorbing layer configured to absorb the signal light received by the first semiconductor layer, and a second semiconductor layer having a second conductivity type opposite to the first conductivity type.

Abstract: A semiconductor light-emitting element formed of a semiconductor layer includes a multilayer reflecting mirror, a light-emitting layer, a resonator, and a phase shift layer. The multilayer reflecting mirror is formed on a substrate. The light-emitting layer is formed on the multilayer reflecting mirror. The resonator uses the multilayer reflecting mirror as a lower reflecting mirror and resonates light emitted from the light-emitting layer. The phase shift layer shifts a phase of a resonance spectrum of the resonator to generate a standing wave having plural principal modes.

Abstract: A vertical GaN-based LED is made by growing an epitaxial LED structure on a silicon wafer. A silver layer is added and annealed to withstand >450° C. temperatures. A barrier layer (e.g., Ni/Ti) is provided that is effective for five minutes at >450° C. at preventing bond metal from diffusing into the silver. The resulting device wafer structure is then wafer bonded to a carrier wafer structure using a high temperature bond metal (e.g., AlGe) that melts at >380° C. After wafer bonding, the silicon is removed, gold-free electrodes (e.g., Al) are added, and the structure is singulated. High temperature solder (e.g., ZnAl) that is compatible with the electrode metal is used for die attach. Die attach occurs at >380° C. for ten seconds without melting the bond metal or otherwise damaging the device. The entire LED contains no gold, and consequently is manufacturable in a high-volume gold-free semiconductor fabrication facility.

Abstract: A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate, and a periodically doped conduction layer is coupled to the undoped top minor. A periodically doped spacer layer is coupled to an active region. An undoped bottom minor coupled to the periodically doped spacer layer. A first intracavity contact is coupled to the periodically doped conduction layer and a second intracavity contact is coupled to the periodically doped spacer layer.

Abstract: A vertical cavity surface emitting laser includes an active layer that includes a quantum well, a first cladding layer and a second cladding layer between which the active layer is interposed. A first multilayer reflector layer is arranged on a side of the first cladding layer opposite to that on which the active layer is arranged. A second multilayer reflector layer is arranged on a side of the second cladding layer opposite to that on which the active layer is arranged. At least one of the first cladding layer and the second cladding layer includes a low activity energy layer having a band gap that is smaller than a smallest band gap of an optical confinement layer for forming the quantum well of the active layer and larger than a band gap of the quantum well.

Abstract: A laser diode with an improved kink level in the L-I characteristic and capable of obtaining a stable high output in a horizontal transverse mode is provided. The laser diode includes an active layer made of nitride III-V compound semiconductor containing at least gallium (Ga) in 3B-group elements and at least nitrogen (N) in 5B-group elements, an n-type compound semiconductor layer provided on one of faces of the active layer, and a p-type compound semiconductor layer provided on the other face of the active layer. A region closest to the active layer, in the n-type compound semiconductor layer is a high-concentration region whose impurity concentration is higher than that of the other n-type regions.

Abstract: The present invention relates to a single photon source 1800 comprising a tapered nanowire 1802, where the nanowire 1802 is made of a semiconductor material, a first electrode 1828 and second electrode 1814, where the electrodes are electrically coupled to a photon emitter 1804 embedded in the nanowire 1802 and wherein the photon emitter 1804 is capable of emitting a single photon when an activation voltage is applied between the electrodes. In advantageous embodiments of the invention, the nanowire is encircled by air or vacuum, such that advantage can be taken of the resultant large ratio between a refractive index of the nanowire and the encircling material, air. Another advantageous feature might be that the first and second electrodes are optically transparent, such that they can be used as part of a reflective element or anti-reflective element.

Abstract: A method for flip chip bonding a GaN device formed on a silicon substrate is described. The method includes providing a silicon substrate having a GaN device thereon, the GaN device comprising at least one gallium-nitride layer near the silicon substrate and remote from the silicon substrate a dielectric layer comprising at least one via configured to electrically contact the at least one gallium-nitride layer, forming a stiffener layer over the GaN device leaving the at least one via exposed, flip chip bonding the GaN device to a submount, wherein the stiffener layer physically contacts the submount and the submount is electrically connected to the at least gallium-nitride layer through the via, and completely removing the silicon substrate exposing the GaN device. Preferably, the material of the stiffener layer comprises silicon, such as silicon, silicon-germanium, or silicon-carbide.

Abstract: A light emitting diode (LED) chip includes an N-type semiconductor layer, a compensation layer arranged on the N-type semiconductor layer, an active layer arranged on the compensation layer; and a P-type semiconductor layer arranged on the active layer. During growth of the compensation layer, atoms of an element (i.e., Al) of the compensation layer move to fill epitaxial defects in the N-type semiconductor layer, wherein the epitaxial defects are formed due to lattice mismatch when growing the N-type semiconductor. A method for manufacturing the chip is also disclosed. The compensation layer is made of a compound having a composition of AlxGa1-xN.

Abstract: A light-emitting device comprises a first type semiconductor layer, a multi-quantum well structure on the first type semiconductor layer, and a second type semiconductor layer on the multi-quantum well structure, wherein the multi-quantum well structure comprises a first portion near the first type semiconductor layer, a second portion near the second type semiconductor layer, and a strain releasing layer between the first portion and the second portion and comprising a first layer including Indium, a second layer including Aluminum on the first layer, and a third layer including Indium on the second layer, wherein the Indium concentration of the third layer is higher than that of the first layer.

Abstract: Disclosed is a light emitting device including a substrate, a buffer layer on the substrate, and a light-emitting structure on the buffer layer. The buffer layer has a refractive index decreased toward the substrate from the light-emitting structure.

Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.

Abstract: An LED device includes a strip-shaped electrode, a strip-shaped current blocking structure and a plurality of distributed current blocking structures. The current blocking structures are formed of an insulating material such as silicon dioxide. The strip-shaped current blocking structure is located directly underneath the strip-shaped electrode. The plurality of current blocking structures may be disc shaped portions disposed in rows adjacent the strip-shaped current blocking structure. Distribution of the current blocking structures is such that current is prevented from concentrating in regions immediately adjacent the electrode, thereby facilitating uniform current flow into the active layer and facilitating uniform light generation in areas not underneath the electrode. In another aspect, current blocking structures are created by damaging regions of a p-GaN layer to form resistive regions.