Abstract: A lithographic apparatus including an illumination system configured to provide a beam of radiation; a support configured to support a patterning device, the patterning configured to impart the projection beam with a pattern in its cross-section; a substrate table configured to hold a substrate; a projection system configured to project the patterned beam onto a target portion of the substrate; at least one mounting bracket configured to couple a second part of the apparatus to a first part thereof, the mounting bracket including a first rigid part, a second rigid part, and an elastic part connecting the first and second rigid parts, wherein a fixing mechanism is provided to fix the positions of the first rigid part and the second rigid part with respect to each other, the elastic part being less rigid than each of the rigid bracket parts, and the fixing mechanism is configured to couple the first and second rigid parts of the mounting bracket substantially by form fixation.

Abstract: One embodiment of the present invention provides a system that identifies an area in a mask layout which is likely to cause manufacturing problems due to a missing or an improperly placed assist feature. During operation, the system receives an uncorrected or corrected mask layout. The system then dissects the mask layout into segments. Next, the system identifies a problem area associated with a segment using a process-sensitivity model which can be represented by a multidimensional function that captures process-sensitivity information. Note that identifying the problem area allows a new assist feature to be added or an existing assist feature to be adjusted, thereby improving the wafer manufacturability. Moreover, using the process-sensitivity model reduces the computational time required to identify the problem area.

Abstract: Disclosed is a measuring apparatus for measuring the position, size and/or shape of a light convergent point of an EUV light source. In one preferred form, the apparatus includes a light receiving device for receiving EUV light diverging from a light convergent point, an optical system for directing the EUV light toward the light receiving device, a light blocking member disposed in a portion of light path for the EUV light and having a plurality of openings, and a system for detecting a spatial distribution of the EUV light at the light convergent point, on the basis of reception of EUV light by the light receiving device.

Abstract: A multilayer mirror used for EUV light includes a substrate, a reflection layer for reflecting the EUV light, a stress compensation layer, formed between the substrate and the reflection layer, for compensating a deformation of the substrate by the reflection layer, wherein the substrate has a first area, in which the stress compensation layer is layered but no reflection layer is layered.

Abstract: A method of forming a pattern of elements is shown. In one embodiment, the method is used to create a reticle. In another embodiment, the method is used to further form a number of elements on a surface of a semiconductor wafer. A pattern on a reticle is first generated using a medium such as computer software to interconnect a number of active areas on the wafer. The pattern is then modified according to a number of rules to create a pattern where substantially all spaces between planned elements exhibit a desired gap width. Layers of elements such as trace lines can be better covered with an ILD in a simplified deposition process as a result of the novel pattern formation described herein.

Abstract: A planar pattern (11), having a plurality of apertures of the same size (Wx×Wy), is determined by a two-dimensional layout determination tool (10), and a three-dimensional structure, having a depth d and an undercut amount Uc for making the phase of the transmitted light be shifted by 180 degrees with every even-numbered aperture, is determined by a three-dimensional structure determination tool (20). Simulation of transmitted light is executed for a structural body having the planar pattern (11) and the three-dimensional structure (21) by a three-dimensional simulator (30) to determine the light intensity deviation D of transmitted light for an odd-numbered aperture without a trench and an even-numbered aperture with a trench. At a two-dimensional simulator (40), simulations using a two-dimensional model prepared based on this deviation D are performed to determine a correction amount ? for making the deviation D zero and obtain a new planar pattern (12).

Abstract: The invention relates to the manufacture of a substrate which is particularly suitable for EUV micro-lithography and comprises a base layer of low coefficient of thermal expansion (CTE) onto which at least one cover layer made of a semiconductor material is applied. Preferably, the cover layer is a silicon layer, preferably applied by ion beam sputtering. By an additional ion beam figuring treatment substrates of extremely accurate shape and extremely low roughness can be prepared.

Abstract: Adjusting a curvature of a substrate includes forming at least one deformed portion in a predetermined region of a substrate, wherein the substrate includes a curved region before forming the at least one deformed portion, and forming the at least one deformed portion includes irradiating the substrate in the predetermined region so as to fixedly displace substrate material in the predetermined region.

Abstract: The reflective photomask may include a substrate, a reflective layer formed on the substrate, an absorption pattern formed on the reflective layer and over a first portion of the substrate. A compensatory portion may be formed over at least a second portion of the substrate. The second portion is adjacent to the first portion, and the compensatory portion is thinner than the absorption pattern.

Abstract: An x-ray mask blank and an x-ray mask wherein, assuming that Ramax and Ramin are defined as a maximum value of Ra and a minimum value of Ra of a surface roughness (Ra: center-line average roughness) on a plurality of points within a predetermined area on an x-ray membrane 12, respectively, the surface of the x-ray membrane 12 has a surface condition so that it may satisfy an expression: (Ramax?Ramin)/(Ramax+Ramin)?0.15.

Abstract: A lithographic projection apparatus includes reflector assembly, a foil trap, and a housing that is constructed and arranged to contain the reflector assembly and the foil trap. The reflector assembly is connected to the housing via a first wall, and the foil trap is connected to the housing via a second wall. The apparatus also includes a chamber between the foil trap and the reflector assembly. The chamber is defined by the housing, the first wall, and the second wall. The apparatus further includes a pump that is configured to create a vacuum in the chamber.

Abstract: A reflective photomask for EUV light is disclosed. The reflective photomask may include a projecting pattern selectively formed on a substrate and a reflective layer on the substrate and the projecting pattern.

Abstract: In an immersion lithography apparatus in which, for example, immersion liquid is supplied to a localized space, a plate is provided to divide the space into two parts. Such a division of the space may facilitate reduction of stray radiation, a temperature gradient, and the transportation of contaminants.

Abstract: An exposure apparatus which exposes substrates to a pattern on a master. The apparatus includes first, second and third chucks which hold the substrates, a first fine adjustment stage which holds the first chuck to perform fine driving, a second fine adjustment stage which holds the second chuck to perform fine driving, a coarse adjustment stage on which the first and second fine adjustment stages are mounted and which can move in an X-Y plane substantially perpendicular to an optical axis, an exposure unit which performs exposure operation for the substrate held by the first chuck, a measurement unit which performs measurement operation for the substrate held by the second chuck, and a controller which drives the coarse adjustment stage and causes the measurement and exposure units to perform the measurement and exposure operations, respectively.

Abstract: A grazing incidence mirror includes a mirror substrate and a mirror surface layer, the mirror surface layer including a first layer and a second layer, the first layer being positioned between the mirror substrate and the second layer. The first layer includes a material selected from the group of Mo, Nb and combinations thereof, and the second layer includes a material selected from the group of B, C, B4C, SiC and combinations thereof. Such a grazing incidence mirror can be used in lithographic apparatus and in device manufacturing methods and provides a reflectivity that may be larger than state of the art grazing incidence mirrors based on Ru.

Abstract: The invention relates to a lithographic apparatus, a device manufacturing method and a device thus manufactured. The lithographic apparatus is of the scanning type, in which a target portion of a substrate is scanned through a patterned radiation beam. Inhomogeneities in the radiation beam may become visible in the form of stripes on the substrate. By imparting an additional movement to the substrate table and optionally to the patterning device of the apparatus, during scanning, in a direction at an angle with the scanning movement, such inhomogeneities are smeared out, and the overall homogeneity of the illumination may be improved.

Abstract: The hydrodynamic effects—which occur during immersion lithography as a result of the movement of the semiconductor wafer—in a liquid preferably provided between the last lens surface of the projection system and the semiconductor wafer can be avoided by means of a movable illumination region for illuminating a cutout of a mask containing a structure to that can be imaged onto the semiconductor wafer. A scan movement of the mask and the semiconductor wafer can be either reduced or entirely avoided by means of a movement of the illumination region.

Abstract: General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor layer of the membrane. The semiconductor membrane layer is initially formed from a substrate of standard thickness, and all but a thin surface layer of the substrate is then etched or polished away. In another version, the flexible membrane is used as support and electrical interconnect for conventional integrated circuit die bonded thereto, with the interconnect formed in multiple layers in the membrane. Multiple die can be connected to one such membrane, which is then packaged as a multi-chip module. Other applications are based on (circuit) membrane processing for bipolar and MOSFET transistor fabrication, low impedance conductor interconnecting fabrication, flat panel displays, maskless (direct write) lithography, and 3D IC fabrication.

Abstract: Disclosed is an exposure apparatus including a projection optical system for projecting a pattern of an original onto a substrate, a stage for holding the substrate, a cover for substantially surrounding an exposure light path, from an end portion of the projection optical system, at a side facing the stage, to the stage, a first supply port provided inside the cover, for supplying a purge gas into a space surrounded by the cover, and a first exhaust port provided in an end portion of said cover at a side facing the stage, for exhausting the gas.

Abstract: A holding system, provided on a movable stage, for holding an object from above, against gravity. The holding system includes at least one holding portion adapted to be in contact with the object, to hold the object from above, and at least one attracting portion for attracting a limited portion of the object upwardly, without contact thereto.

Abstract: The present invention relates to an apparatus for forming a pattern on a radiation sensitive material comprising a source to form a radiation beam, a scanning element to scan at least one beam from said radiation source over said radiation sensitive material, a modulator to modulate said at least one beam during scanning according to an input pattern data file, where said modulation of the beam creates a coherent sub-image on the workpiece and several sub-images are non-coherently superposed to create a final image. The invention also relates to a method of patterning a workpiece and a workpiece as such.

Abstract: A final element of a projection system of an immersion lithographic apparatus is configured for a liquid having a refractive index greater than a refractive index of the final element. In an embodiment, the final element comprises a convex meniscus shaped lens. Such a final element enables the effective numerical aperture of the lithographic apparatus to be increased and reduce total internal reflection of the projected beam as it passes through the final element to the liquid.

Abstract: A method of operating a computing system to determine reticle data. The reticle data is for completing a reticle for use in projecting an image to a semiconductor wafer. The method receives circuit design layer data comprising a desired circuit layer layout, and the layout comprises a plurality of lines. The method also identifies in the plurality of lines a first line portion for use as a first circuit function and a second line portion for use as a second circuit function that differs from the first circuit function. The first line portion is parallel and adjacent to the second line portion. The method also provides the reticle data in an output data file for use in forming features on the reticle.

Abstract: In fabricating an X-ray mask, a chromium oxide film serving as an etching stopper is formed on a diamond film serving as an X-ray transmitter. Then, a diamond layer serving as a first X-ray absorber is formed on the chromium oxide film. Thereafter, a tungsten layer serving as a second X-ray absorber is formed on the diamond layer. Consequently, the diamond layer and the tungsten layer form an X-ray absorber having a laminated structure. When the X-ray absorber has a laminated structure including substances having different compositions, the transmittance and the phase shift quantity of the overall X-ray absorber can be readily adjusted. Thus, a method of fabricating an X-ray mask providing improved resolution of the pattern of a semiconductor device or the like is obtained.

Abstract: An immersion optical projection system for photolithography is provided. A transparent plate is located between a last lens element and the wafer during a usage of the system. The transparent plate has a lens-side surface and a wafer-side surface. The system is adapted to have a layer of lens-side fluid located between the last lens element and the lens-side surface of the transparent plate, e.g., when the last lens element is operably located over the wafer during a photolithography process. The system is also adapted to have a layer of wafer-side fluid located between the wafer-side surface of the transparent plate and the wafer, during a usage of the system. The wafer-side fluid may or may not be fluidly connected to the lens-side fluid. The wafer-side fluid may or may not differ from the lens-side fluid.

Abstract: A lithographic projection apparatus is disclosed. The apparatus includes a substrate support constructed to support a substrate, a projection system configured to project a patterned radiation beam onto a target portion of the substrate, and a frame onto which at least a part of the projection system is mounted. A fluid provider is arranged to provide a fluid between the substrate and a downstream end of the projection system. The apparatus also includes an actuator associated with the frame and with the fluid provider and arranged to position the fluid provider, and a cushion system for cushioning vibrational forces when the actuator positions the fluid provider.

Abstract: A projection optical system for digital lithography includes an Offner imaging system with a defined optical axis. The Offner imaging system has a well-corrected region. The system includes means for shaping an optical beam having an extent too large to fit within the well-corrected region to propagate through the Offner imaging system within the well-corrected region.

Abstract: Variations are characterized in feature dimensions of an integrated circuit that is to be fabricated in accordance with a design by a process that produces topographical variation in the integrated circuit, the variations in feature dimension being caused by the topographical variations. The process includes lithography or etch. Predicted characteristics are verified to conform to the design, the characteristics including feature dimensions or electrical characteristics. A process is selected for use in fabricating the integrated circuit based on the relative predicted variations. Chip-level features of a design of an integrated circuit are verified for manufacture within focus limitations of a lithographic tool. Whether a design of a level of an integrated circuit can be lithographically imaged in accordance with the design is predicted, and if it cannot be, the design or processing parameters are adjusted so that it can be.

Abstract: A method of making a semiconductor device manufacturing mask, which makes it possible to suppress a semiconductor-device global step and simply manufacture a highly reliable semiconductor device. Square dummy patterns each having one side of, for example, 0.25 ?m or less are inserted into an area other than an actual pattern lying within a semiconductor device manufacturing mask to thereby uniformize a pattern density, enable etching processing without changing conditions set for every semiconductor device manufacturing mask an prevent an increase in global step of a post-CMP interlayer insulating film.

Abstract: A lithographic apparatus is disclosed. The apparatus includes an illumination system for providing a beam of radiation, a support structure for supporting a patterning device, a substrate support for supporting a substrate, a projection system for projecting the patterned beam of radiation onto a target portion of the substrate, and a thermal compensation deformation unit for compensating for a deformation of an element caused by a thermal load. The thermal compensation deformation unit includes at least one temperature sensor for sensing a temperature in at least one location on the element, and a processing unit for calculating the deformation of the element caused by the thermal load as a function of the temperature sensed at the location. The deformation is calculated using data from a computer-generated model of the element so that an appropriate correction for the deformation can be made or taken into account.

Abstract: The present invention provides a lithographic apparatus comprising an illumination system for providing a projection beam of radiation. The illumination system comprises at least one movable optical element (7), such that a projection beam of radiation (4) can be shifted around a central position. This ensures that inhomogeneities in the intensity distribution in the projection beam (4) will be smeared out, which in turn provides an improved homogeneity of the exposure of a surface to be illuminated by the system, such as a wafer or other substrate. The optical element (7) may comprise a motor movable mirror, prism, filter, lens, axicon, diffuser, diffractive optical array, optical integrator, etc. The invention further provides a device manufacturing method, using a lithographic apparatus according to the invention, wherein the optical element is moved, in order to provide an optimum homogeneity for the projection beam of radiation.

Abstract: An exposure apparatus includes a projection optical system for projecting a pattern on a mask onto an object to be exposed, a final surface of the projection optical system and a surface of the object immersed in a fluid, and a plane-parallel plate arranged between the projection optical system and the object. The plane-parallel plate includes a first surface and a second surface that serves as a back surface of the first surface and opposes to the object. Both the first and second surfaces are immersed in the fluid and the plane-parallel plate has an antireflection coating that is designed according to an incident light at an angle corresponding to a numerical aperture of the projection optical system.

Abstract: A method is provided for creating a phase mask for lithographic exposure operations. In this case, phase-shifting regions (10) with a different phase are defined on both sides of critical structures (6), which fall below an extent limit. At least one phase shifter correction is carried out such that at least two mutually facing phase-shifting regions (10) are joined together to form a contiguous phase-shifting region (10) if their distance from one another falls below a predetermined minimum distance.

Abstract: An automatic focusing apparatus comprises a stage holding a substrate, an objective lens disposed facing the substrate surface, an illumination optics illuminating the substrate surface with a spotted light beam from an oblique direction, a photodetector detecting reflected light from the substrate surface, a position detection circuit detecting a vertical position of the substrate surface from an electric signal obtained from the photodetector to output a position signal, a correction circuit monitoring the position signal in real time and subtracting a surplus exceeding a signal change corresponding to a surface shape change of the substrate from the position signal, when a change amount per unit time of the position signal exceeds a predetermined level and outputting a corrected position signal, and a stage control circuit controlling the vertical position of the stage based on the corrected position signal.

Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques.

Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques.

Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques.

Abstract: The present invention relates to the preparation of an x-ray photomask by exposing a free-standing film of a radiation sensitive metal/chalcogenide to an electron beam scanned in a defined pattern so as to generate areas in the film of reduced metal content in accordance with the defined pattern, as well as novel x-ray photomasks.

Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques.

Abstract: Attempting to provide an illumination optical system and an exposure apparatus using the same, which provide a more uniform angular distribution of light for illuminating a mask than the prior art, an illumination optical system for illuminating an object surface includes an optical unit that converts light from a light source section into approximately parallel light, and includes first and second mirrors, wherein the first mirror has an opening, through which light reflected by the second mirror passes.

Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques.

Abstract: A reflective mask (e.g., an EUV reflective mask) and a method of making such a mask are disclosed. The mask includes an absorbent substrate and a reflective coating overlying the substrate. The reflective coating is patterned to include a circuit design that is to be transferred onto one or more wafers, and more particularly onto one or more die on the wafers, during semiconductor fabrication processing. The mask includes no other radiation absorbent material, and the occurrence and severity of dead zones, which commonly occur in conventional reflective masks and which degrade the fidelity of pattern transfers, are thereby mitigated. A methodology for inspecting the mask via the transmission of visible, UV or deep-UV radiation through the mask is also disclosed.

Abstract: A photolithographic mask for patterning a photosensitive material, in particular on a wafer, has at least one structure region for imaging a structure on the photosensitive material, and an absorber structure for absorbing incident radiation. At least one structure region is provided and has at least one thin protective coating of only a few atomic layers made of chemically and mechanically resistive material selected from Al2O3, Ta2O5, ZrO2, and HfO2formed by atomic layer chemical vapor deposition (ALCVD) so that the protective coating constitutes a negligible alteration of nominal or critical dimensions for the structure region, and in which additional absorption or reflection losses are negligibly low. In this way, the photolithographic mask can be cleaned chemically and/or mechanically, without the structure regions being attacked and damaged by the chemical and/or mechanical cleaning media. Furthermore, a plurality of methods are possible for fabricating this photolithographic mask.

Abstract: The invention is directed to an arrangement for debris reduction in a radiation source based on a plasma, particularly for generating bundled radiation in the extreme ultraviolet (EUV) spectral region. The object of the invention, to find a novel possibility for beam shaping and debris reduction in a radiation source based on a plasma which substantially increases the life of collector optics without having to tolerate a substantial reduction in transparency or a sudden destruction of the protective mechanism, is met according to the invention in that exchangeable additional optics are arranged in the radiation path between a conventional debris filter and the collector optics, wherein a distance-increasing intermediate imaging of the source location relative to the collector optics is provided by the additional optics for further debris reduction.

Abstract: A reflection type mask includes a substrate on which a multi-layered film for reflecting X-rays is provided, a mask pattern which is formed on the multi-layered film for absorbing the X-rays, and a cover for protecting the mask pattern. The cover is detachably attached to the substrate.

Abstract: A photolithographic mask is based on a combination of a half-tone phase mask and an alternating phase mask such that when radiation passes through some of the openings, a phase difference is in each case produced between adjacent openings, and the surroundings of the openings are partly transmissive and shift the phase of the radiation. Consequently, the advantages of alternating phase masks and half-tone phase masks can be realized on one mask and, accordingly, significantly enlarged process windows for the actual lithography process result with the photolithographic mask. In particular, the advantages can be obtained with only one absorber material and the size of non-imaging auxiliary structures is approximately as large as the smallest main structure.

Abstract: An apparatus, system and method to compensate for the proximity effects in the imaging of patterns in a photolithography process. A light exposure of a photoresist layer is effectuated in predetermined patterns through an exposure mask having light-transmissive openings in correspondence to the predetermined patterns. The exposure mask has areas densely populated with the light-transmissive openings and areas sparsely populated with the light-transmissive openings. Light is attenuated through the densely populated light-transmissive openings by a different amount than through the sparsely populated light-transmissive openings.

Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques.

Abstract: An autofeeder and media object digitization system. A receptacle for media objects is coupled to align a first wall with a clip to hold the media object. A suction device forming part of the first wall sucks a media object against a suction plate. The suction plate then moves the media object into engagement with the clip. The clip is driven to move the media object past a scanning window. A release lever or the clip is triggered to release the media object after it has passed the scanning window.

Abstract: A photomask for eliminating antenna effects in an integrated circuit and integrated circuit manufactured with the photomask are disclosed. The photomask includes a substrate and a patterned layer formed on at least a portion of the substrate. The patterned layer may be formed using a mask pattern file created by analyzing a pattern in a mask layout file to identify a region including an antenna ratio less than a first design rule. A feature located in the identified region is moved based on a second design rule from a first position to a second position in the mask layout file to create a space in the identified region. A grounding feature is placed in the space and automatically connected to a gate feature in the mask layout file such that the antenna ratio is increased to greater than or approximately equal to the first design rule.