Abstract: It is difficult to actualize a semiconductor optical waveguide having desired properties that reflect design even when process technology for a semiconductor electronic circuit is applied as is to the production of a semiconductor optical waveguide. The present invention includes: a substrate; a semiconductor optical waveguide structure arranged on the substrate; a planar region formed around the semiconductor optical waveguide structure on the substrate; and a semiconductor dummy structure that is arranged around the planar region on the substrate and is formed of a plurality of dummy patterns, wherein the semiconductor optical waveguide structure includes a line-symmetric pattern on a plane that is parallel to the substrate; and the plurality of dummy patterns are arranged symmetrically with respect to the symmetry axis of the line-symmetric pattern.

Abstract: A method of fabricating a waveguide device is disclosed. The method includes providing a substrate having an elector-interconnection region and a waveguide region and forming a patterned dielectric layer and a patterned redistribution layer (RDL) over the substrate in the electro-interconnection region. The method also includes bonding the patterned RDL to a vertical-cavity surface-emitting laser (VCSEL) through a bonding stack. A reflecting-mirror trench is formed in the substrate in the waveguide region, and a reflecting layer is formed over a reflecting-mirror region inside the waveguide region. The method further includes forming and patterning a bottom cladding layer in a wave-tunnel region inside the waveguide region and forming and patterning a core layer and a top cladding layer in the waveguide region.

Abstract: A waveguide mode expander couples a smaller optical mode in a semiconductor waveguide to a larger optical mode in an optical fiber. The waveguide mode expander comprises a shoulder made of crystalline silicon and a ridge made of non-crystalline silicon (e.g., amorphous silicon). In some embodiments, the ridge of the waveguide mode expander has a plurality of stages, the plurality of stages have different widths and/or thicknesses at a given cross section.

Abstract: A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes a processed semiconductor substrate. The processed semiconductor substrate includes active electronic components. The semiconductor structure also includes a dielectric layer that covers, at least partially, the processed semiconductor substrate. An interface layer that is suitable for growing optically active material on the interface layer is bonded to the dielectric layer. An optical gain layer and the processed semiconductor substrate are connected through the dielectric layer by electric and/or optical contacts.

Abstract: The present invention is directed to synthetic anti-inflammatory peptides and use thereof in the treatment and prevention of inflammatory and fibrotic conditions. Specifically, the invention relates in some embodiments to short isolated peptides having the amino acid sequence Phe-Lys-Glu (FKE), Tyr-Lys-Glu (YKE) or comprising a plurality of these sequences that may be flanked by Ala/Gly (A/G) linkers. The invention further relates in some embodiments to methods for inhibiting scar formation and for treating and alleviating IL-10 dependent conditions.

Abstract: This disclosure generally relates to high-speed fiber optic networks that use light signals to transmit data over a network. The disclosed subject matter includes devices and methods relating to header subassemblies and/or optoelectronic subassemblies. In some aspects, the disclosed devices and methods may relate to a header subassembly that can include: a multi-layer substrate with a bottom layer, a top layer having top thin film signal lines, and one or more intermediate layers having thick film traces between the top layer and the bottom layer, the thick film traces electrically coupled to the top thin film signal lines; and optoelectronic components positioned over the multi-layer substrate and electrically coupled with the signal lines.

Abstract: A connector includes a ferrule assembly having a ferrule, a hub and a spring, the ferrule having a distal face accessible at a distal end of the connector housing, the ferrule being movable in a proximal direction relative to the connector housing. The distal and proximal positions are separated by an axial displacement distance. The ferrule proximal movement is against the spring's bias. The cable of the assembly includes an optical fiber contained within a jacket and also a strength layer between the fiber and the jacket that is anchored to the connector housing. The fiber extends through a fiber from the proximal end of the connector housing to the ferrule. The fiber has a distal portion potted within the ferrule. The fiber passage has a fiber take-up region configured to take-up an excess length of the fiber corresponding to the ferrule axial displacement.

Abstract: A semiconductor laser in a ridge waveguide structure includes: a semiconductor substrate; a lower cladding layer which is formed on the semiconductor substrate; an active layer and a semiconductor layer which are in parallel on the lower cladding layer and are connected with each other; a first upper cladding layer locally aligned above the active layer; a second upper cladding layer locally aligned above the semiconductor layer; and a third upper cladding layer locally aligned above the active layer to confine light which is guided in the active layer, wherein the semiconductor layer has a band gap which is larger than that of the active layer. According to this constitution, an optical semiconductor device with high reliability in which the ridge waveguide structure whose manufacturing is relatively easy is applied, and current diffusion and electrical crosstalk between lasers in the ridge waveguide structure are suppressed is enabled.

Abstract: Two semiconductor chips are optically aligned to form a hybrid semiconductor device. Both chips have optical waveguides and alignment surface positioned at precisely-defined complementary vertical offsets from optical axes of the corresponding waveguides, so that the waveguides are vertically aligned when one of the chips is placed atop the other with their alignment surface abutting each other. The position of the at least one of the alignment surface in a layer stack of its chip is precisely defined by epitaxy. The chips are bonded at offset bonding pads with the alignment surfaces abutting in the absence of bonding material therebetween.

Abstract: The embodiments of the present invention disclose a backlight module, a liquid crystal panel and a display device. The backlight module comprises: a light guide plate (5), a plurality of polarization-maintaining optical fibers (3) and a plurality of monochrome laser light sources (1) provided at a lateral portion of the light guide plate (5). The polarization-maintaining optical fibers (3) receive the monochromatic light emitted from the monochrome laser light sources (1) respectively, and transmit the monochromatic light into the light guide plate (5).

Abstract: Embodiments are directed to a coupler system having an interposer configured to couple optical signals. The interposer includes at least one optoelectronic component formed on a glass substrate. The interposer further includes at least one waveguide formed on the glass substrate and configured to couple the optical signals to or from the at least one optoelectronic component, wherein the at least one waveguide comprises a waveguide material having grain diameters greater than about one micron and an optical loss less than about one decibel per centimeter of optical propagation.

Abstract: The present invention provides a waveguide structure for optical coupling. The waveguide structure includes a first waveguide embedded in a cladding of lower refractive index than the first waveguide, and a second waveguide of higher refractive index than the cladding and distanced from the first waveguide. The waveguide structure further includes an intermediate waveguide, of which at least a part is arranged between the first waveguide and the second waveguide. The first waveguide and the second waveguide each comprise a tapered end for coupling light into and/or out of the intermediate waveguide.

Abstract: This slow light waveguide includes an initial region which extends, along an optical axis, from a start starting from which the width of a central waveguide begins to continuously decrease up to an end beyond which the width of the central waveguide no longer decreases up to the end of a slowing section, this initial region overlapping a broadening region where the length of lateral teeth continuously increases, a final region which extends, along the optical axis, from a start starting from which the width of the central waveguide begins to continuously increase up to an end beyond which the width of the central waveguide no longer increases, this final region overlapping a narrowing region where the length of the lateral teeth continuously decreases.

Abstract: In accordance with the present invention, an opto-electric hybrid board in which optical wiring is freely disposed without restriction by the arrangement of electrical elements and the like, and in which high-density mounting of electrical wiring and optical wiring is possible, and an electric device including this opto-electric hybrid board are provided. An opto-electrical hybrid board (1000) of the present invention has an optical waveguide (1), an optical connector disposed at an end section of the optical waveguide (1), and an opto-electric conversion section (4) disposed below the optical waveguide (1), and a motherboard (electrical wiring board) (5) disposed below the opto-electric conversion portion (4).

Abstract: Provided is a silicon-based electro-optic modulator which is small in size and capable of high speed operation. A first silicon semiconductor layer (120) doped to exhibit a first type of conductivity and a second semiconductor layer (160) doped to exhibit a second type of conductivity are at least partly stacked together, and a relatively thin dielectric (150) is formed at the interface between the stacked first and second silicon semiconductor layers (120, 160). The first silicon semiconductor layer (120) has a rib waveguide shape (130) comprising a rib portion (131) and slab portions (132). A first heavily doped region (140) formed by a high concentration doping process is arranged at a location, in the first silicon semiconductor layer (120), neighboring to each of the slab portions (132). The first heavily doped region (140) has almost the same height as that of the rib portion (131) of the rib waveguide (130).

Abstract: A thermal switch includes a substrate having a target region and a peripheral region. A metallization array is coupled to the substrate and is positioned adjacent the target region, the metallization array including a plurality of first temperature dependent thermally conductive metallization segments and a plurality of second temperature dependent thermally conductive metallization segments. The metallization array directs heat flux toward the target region within a first temperature range and directs heat flux away from the target region within a second temperature range.

Abstract: A heat assisted magnetic recording (HAMR) write apparatus has a media-facing surface (MFS) and includes a pole, coil(s) and a waveguide. The waveguide is optically coupled with a laser and directs energy toward the MFS. The waveguide includes an entrance, a bottom and a mode converter having a core, an inner cladding, high index layer(s) and an outer cladding. The core has sides that diverge in width. The core has a first index of refraction. The outer cladding has a second index of refraction less than the first index of refraction. The inner cladding has a third index of refraction not greater than the second index of refraction. The inner cladding is between the high index layer(s) and the core. The high index layer(s) are between the inner and outer cladding. The high index layer(s) have a high index of refraction greater than the second index of refraction.

Abstract: The invention provides a display apparatus and a method for manufacturing the same, relates to the field of display technology, and solves the problem of low display luminance due to the existing display apparatus being affected by other film layers. A display apparatus comprises a light emitting unit and further comprises several layers of thin film located in the light emission path of the light emitting unit, and at least one of the several layers of thin film has nanoparticles.

Abstract: Embodiments of the present disclosure are directed toward techniques and configurations for phase offset adjustment in an electro-optical modulator. In one embodiment, the apparatus may include an electro-optical modulator having first and second arms, to modulate light passing through the arms according to an electrical data signal provided to the electro-optical modulator, to output an optical data signal that combines first and second light portions outputted by the first and second arms respectively; and a control module to convert the first and second light portions into first and second power signals indicative of respective phases of the first and second light portions, determine a balance between the first and second power signals, and adjust a phase of one of the first or second light portions, to achieve a bias point to provide the balanced optical data signal. Other embodiments may be described and/or claimed.

Abstract: Techniques for increasing efficiency of thermo-optic phase shifters using multi-pass heaters and thermal bridges are provided. In one aspect, a thermo-optic phase shifter device includes: a plurality of optical waveguides formed in an SOI layer over a buried insulator; at least one heating element adjacent to the optical waveguides; and thermal bridges connecting at least one of the optical waveguides directly to the heating element. A method for forming a thermo-optic phase shifter device is also provided.

Abstract: A layer structure and method of fabrication of a semiconductor heterostructure containing a two-dimensional electron gas (2DEG), two-dimensional hole gas (2DHG), or a two-dimensional electron/hole gas (2DEHG). The heterostructure contains a quantum well layer with 2DEG, 2DHG, or 2DEHG embedded between two doped charge reservoir layers and at least two remote charge reservoir layers. Such scheme allows reducing the number of scattering ions in the proximity of the quantum well as well a possibility for a symmetric potential for the electron or hole wavefunction in the quantum well, leading to significant improvement in carrier mobility in a broad range of 2DEG or 2DHG concentration in the quantum well. Embodiments of the invention may be applied to the fabrication of galvano-magnetic sensors, HEMT, pHEMT, and MESFET devices.

Abstract: An optical device comprises a first optical coupler configured to receive a light signal and provide a first output and a second output, a first optical waveguide in optical communication with the first output and configured to provide a first optical path for a first portion of the light signal, and a second optical waveguide in optical communication with the second output and configured to provide a second optical path for a second portion of the light signal, wherein the first optical waveguide is configured to provide a phase differential between the first optical path and the second optical path, wherein the second optical waveguide is positioned according to a lateral thermal diffusion length associated with the first optical waveguide, and wherein the lateral thermal diffusion length is a spreading distance of a thermal effect in a direction about perpendicular to the first optical path.

Abstract: An optical coupling device including a housing, a first optical port provided on the housing, a second optical port provided on the housing and configured to couple to an optical fiber cable, an optical signal path guiding optical signals between the first and second optical port, a monitoring device provided on the housing, and an decoupling element optically coupled to the optical signal path and the monitoring device for coupling an optical monitoring signal coupled out from the optical signals guided between the first and second optical port onto the monitoring device. Furthermore, an optical communication system is provided, the system including an optical module with an optical signal processing device, the optical signal processing device being configured for at least one of receiving optical signals by a receiving device and transmitting optical signals by an optical signal source, and an optical coupling device guiding the optical signals.

Abstract: An optical modulation device includes a plasmonic nano-antenna layer, a metal layer that faces the plasmonic nano-antenna layer, and a permittivity variation layer and a dielectric material layer between the plasmonic nano-antenna layer and the metal layer. An active area formed in the permittivity variation layer according to an external signal may function as a gate that controls optical modulation performance.

Abstract: An Si/Ge SACM avalanche photo-diodes (APD) having low breakdown voltage characteristics includes an absorption region and a multiplication region having various layers of particular thicknesses and doping concentrations. An optical waveguide can guide infrared and/or optical signals or energy into the absorption region. The resulting photo-generated carriers are swept into the i-Si layer and/or multiplication region for avalanche multiplication. The APD has a breakdown bias voltage of well less than 12 V and an operating bandwidth of greater than 10 GHz, and is therefore suitable for use in consumer electronic devices, high speed communication networks, and the like.

Abstract: Optical films, and organic-light-emitting display apparatuses, include a high refractive index pattern layer including a first surface and a second surface facing each other. The first surface includes a pattern having grooves. The grooves each have a curved surface and a depth greater than a width. The high refractive index pattern layer is formed of a material having a refractive index greater than 1. Further included is a low refractive index pattern layer formed of a material having a refractive index smaller than that of the material constituting the high refractive index pattern layer. The low refractive index pattern layer includes a filling material for filling grooves. A tilt angle, ?, of each groove satisfies the following condition, 15°???75°.

Abstract: A connector includes a ferrule assembly having a ferrule, a hub and a spring, the ferrule having a distal face accessible at a distal end of the connector housing, the ferrule being movable in a proximal direction relative to the connector housing. The distal and proximal positions are separated by an axial displacement distance. The ferrule proximal movement is against the spring's bias. The cable of the assembly includes an optical fiber contained within a jacket and also a strength layer between the fiber and the jacket that is anchored to the connector housing. The fiber extends through a fiber from the proximal end of the connector housing to the ferrule. The fiber has a distal portion potted within the ferrule. The fiber passage has a fiber take-up region configured to take-up an excess length of the fiber corresponding to the ferrule axial displacement.

Abstract: In a method, a substrate is provided and is implanted with argon ions to form an argon ion modified layer. Two slots are defined and extend through the argon ion modified layer to form a ridge. The substrate is etched to change the ridge into a beveled ridge. An etching rate of the argon ion modified layer is higher than that of the substrate. The beveled ridge is diffused with metal to form a beveled ridge waveguide.

Abstract: An optic modulator may include: an optical waveguide including a ridge-shaped portion having a first region and a second region over the first region; a slab-shaped portion being in contact with a first region of the ridge-shaped portion; an optical waveguide electrode forming a Schottky contact with a second region of the ridge-shaped portion; metal plugs being in contact with the slab-shaped portion and the optical waveguide electrode, respectively; and metal pads connected to the respective metal plugs.

Abstract: An optical device includes a substrate including a waveguide array formed therein, each waveguide having a reflective surface; a lens array unit including a waveguide-side lens array arranged facing the waveguide array so each lens of the lens array is aligned with the corresponding reflective surface; and a connector unit including an optical transmission path-side lens array arranged and fixed so each lens of the lens array is aligned with the corresponding lens in the waveguide-side lens array, the plurality of inserted optical transmission paths aligned with the corresponding lens in the optical transmission path-side lens array.

Abstract: An optical waveguide component includes: an optical fiber mounting substrate provided with optical fiber alignment grooves having either, for alignment of optical fibers, V-grooves or inverted trapezoidal grooves in which inverted top sections of the V-grooves are truncated; an optical waveguide substrate in which optical waveguides are formed; a resin layer that is aligned and fixed in a state in which the optical fiber mounting substrate and the optical waveguide substrate are flush or have a predetermined amount of offset; and a transparent resin that is filled in a gap in which the optical fiber mounting substrate and the optical waveguide substrate face each other.

Abstract: Embodiments of the present invention provide an electrically controlled optical fuse. The optical fuse is activated electronically instead of by the light source itself. An applied voltage causes the fuse temperature to rise, which induces a transformation of a phase changing material from transparent to opaque. A gettering layer absorbs excess atoms released during the transformation.

Abstract: An optical waveguide device includes a wiring board, an optical waveguide, an optical path conversion mirror, a hole, and a lens component. The optical waveguide is disposed on the wiring board and includes first and second cladding layers and a core layer. The optical path conversion mirror is formed in the optical waveguide. The hole is formed in the first and second cladding layers and outside an optical waveguide formation region. The lens component is optically coupled to the optical path conversion mirror. The lens component includes a lens main body, a bump, and protrusion portions. The lens main body has a lens function. The bump is fixed to a structure including the wiring board and the optical waveguide, in the hole by a joining material. A diameter of a tip end of the bump of the lens component is smaller than a minimum diameter of the hole.

Abstract: Devices, systems, and methods for detection of an analyte in a sample are disclosed. In some embodiments, an optical sensor can include a metallic layer and a plurality of dielectric pillars extending through the metallic layer. A plurality of regions of concentrated light can be supported in proximity to the ends of the plurality of dielectric pillars when a surface of the metallic layer is illuminated. Concentrated light within one or more of these regions can interact with an analyte molecule, allowing for detection of the analyte.

Abstract: An object is to provide a light modulator capable of highly accurate bias control by maintaining main output characteristics and monitor characteristics in an appropriate relationship and matching a bias point determined using monitor output and an optimal bias point of main output. The light modulator includes an optical waveguide formed in a substrate having a thickness of 20 ?m or less, in which the optical waveguide includes a Mach-Zehnder waveguide and an output waveguide for guiding signal light from a multiplexing portion of the Mach-Zehnder waveguide and outputting the signal light outside the substrate and monitoring means that monitors signal light or radiated light. Leaked light-removing means for removing some of the radiated light propagating through the output waveguide from the output waveguide and emitting the radiated light outside the substrate is provided in the light modulator.

Abstract: The invention provides a solution for the full integration of a coherent receiver on Indium Phosphide (InP) or other material that has a number of advantages over current coherent receiver design. PIN waveguides can be reverse biased and forward biased to modify the mode effective index so as to realize an integrated polarization beam splitting function and the 90 degree optical hybrid. The fabrication tolerance is therefore greatly increased; resulting in much reduced complexity and cost for the final receiver.

Abstract: The optical includes a waveguide positioned on a base and an optical component positioned on the base. The optical component is a light sensor that includes an active medium or a modulator that includes an active medium. The waveguide is configured to guide a light signal through the component such that the light signal is guided through the active medium. The device includes one or more heat control features selected from the group consisting of: placing one or more thermal conductors over a lateral side of a ridge of the active medium; extending thermal conductors from within the active component to a location outside of the active component, and tapering the ridge of the active medium within the perimeter of the active component.

Abstract: An integrated photonic component (100) for polarization insensitive wavelength multiplexing includes an arrayed waveguide grating, AWG, (1) having a predetermined polarization splitting and a MZI-based polarization beam splitter (8) that is configured to compensate the predetermined polarization splitting of the AWG (1). The result is a fabrication tolerant integrated photonic component (100) that is operable over a wide number of limited bandwidth wavelength channels of a wavelength division multiplexing, WDM, system. A photonic integrated circuit, PIC, (200) for use in a WDM system is provided. The PIC (200) includes the integrated photonic component (100). A method of designing the integrated photonic component (100) is also described.

Abstract: A pump light pulse is generating a strain pulse in a sample that includes quantum wells. A signal is measured using a probe light pulse. The probe light pulse is delayed in relation to the pump light pulse. The signal derives from a change in an optical property of the sample, which optical property responds to the generated strain pulse. One may deduce parameters of interest of the sample, including the quantum wells, from the characteristics of the signal. For discerning between various components of the stress in the quantum wells a lead pump pulse, preceding the pump light, pulse my also be used. A system for the application of such methods is also disclosed.

Abstract: A core layer (13) of an optical waveguide (1) includes a plurality of core groups (140) disposed so as to mutually intersect on the same plane, each core group (140) being an assembly of a plurality of core portions (14), at least some of which are arranged in parallel, and side cladding portions (15) provided so as to adjoin the side surfaces of each core portion (14). A transverse cross-section of the optical waveguide (1) includes a high refractive index region (WH) in a position corresponding with each core portion (14) and having a relatively high refractive index, and a low refractive index region (WL) in a position corresponding with each side cladding portion (15) and having a lower refractive index than the high refractive index region (WH), and a refractive index distribution is formed in which the refractive index varies continuously across the entire distribution.

Abstract: A short optical pulse generator which includes an optical pulse generation portion that has a quantum well structure and generates an optical pulse, a frequency chirp portion that has a quantum well structure and chirps a frequency of the optical pulse, and a group velocity dispersion portion that includes a plurality of optical waveguides disposed in a mode coupling distance and which causes a group velocity difference corresponding to a wavelength in the optical pulse of which the frequency is chirped.

Abstract: A SOI device may include a waveguide adapter that couples light between an external light source—e.g., a fiber optic cable or laser—and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device—e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer.

Abstract: Method and transmitting node for adjusting transmission over xDSL lines connected to the transmitting node. The method involves transmitting (1006) a first signal A1 on a first line (304), and transmitting (1008) a second signal A2 on a second line (306), the second signal A2 being related to the first signal A1. The method further involves adjusting (1010) the transmission of the second signal A2 on the second line (306), such that a contribution from the second signal A2 interferes constructively with a signal A1? at the second end (304:2) of the first line (304), where the signal A1? represents the signal A1 having propagated through the first line.

Abstract: In order to obtain a ferroelectric thin film having good crystallinity and realizing high piezoelectric properties, and a production method therefor, provided is a ferroelectric thin film constituting a dielectric material having a perovskite structure that comprises Zr and Ti formed on a substrate, wherein a layer having a Zr ratio that is smaller than a predetermined ratio and having good crystallinity and a layer that realizes good piezoelectric properties and has a Zr ratio that is about as great as the predetermined ratio are combined. A production method is also provided.

Abstract: One embodiment of the present invention relates to a light-emitting device comprising an insulating surface; a lower electrode over the insulating surface; a protrusion over the insulating surface having a sidewall sloping toward the lower electrode; a light-transmitting partition overlapping with an end portion of the lower electrode and the sidewall of the protrusion; and a light-emitting element including the lower electrode, an upper electrode overlapping with the lower electrode, and a layer containing a light-emitting organic compound between the lower electrode and the upper electrode. In the light-emitting device, the sidewall of the protrusion can reflect light emitted from the light-emitting element. As a result, the light-emitting device that has reduced power consumption is provided.

Abstract: An infrared solid-state imaging device with unit detecting sections in a matrix form, wherein the unit detecting section includes: an infrared light guiding layer; a first reflecting layer on the infrared light guiding layer; an infrared light detecting section on the first reflecting layer, the infrared light detecting section including an infrared light absorbing layer and upper and lower contact layers; and first metal wiring connected to the upper contact layer, wherein a side wall of the unit detecting section is inclined at an angle smaller than 45° to a normal direction, to form a groove between the adjacent unit detecting sections, a first insulating layer is provided on the side wall of the unit detecting section and second metal wiring is provided on the first insulating layer, and a refractive index of the first reflecting layer is lower than that of the lower contact layer.

Abstract: An avalanche photodetector element is disclosed for converting an optical signal to an electrical signal, comprising an input waveguide and a photodetector region, the photodetector region comprising at least one intrinsic region, at least one p-doped region and at least one n-doped region, the doped regions and the at least one intrinsic region forming at least one PIN-junction avalanche photodiode, the input waveguide and the photodetector region being arranged with respect to each other such that the optical signal conducted by the input waveguide is substantially conducted into the photodetector region to the PIN-junction avalanche photodiode, the PIN-junction avalanche photodiode converting the optical signal to an electrical signal, characterized in that the photodetector region comprises more than one p-doped region and/or n-doped region, whereby these p-doped regions and/or n-doped regions are physically arranged as an array.

Abstract: A method of manufacturing a semiconductor device, includes forming a laser section on a portion of a substrate, the laser section including an active layer, an upper semiconductor layer on the active layer, and a mask on the upper semiconductor layer; forming a compound semiconductor layer of an indium-containing material in contact with a side of the laser section, the compound semiconductor layer having a projection immediately adjacent the laser section; and wet etching and removing the projection with an etchant containing hydrobromic acid and acetic acid, planarizing the compound semiconductor layer, and producing a (111)A surface in the upper semiconductor layer, under the mask.

Abstract: A connector includes a ferrule assembly having a ferrule, a hub and a spring, the ferrule having a distal face accessible at a distal end of the connector housing, the ferrule being movable in a proximal direction relative to the connector housing. The distal and proximal positions are separated by an axial displacement distance. The ferrule proximal movement is against the spring's bias. The cable of the assembly includes an optical fiber contained within a jacket and also a strength layer between the fiber and the jacket that is anchored to the connector housing. The fiber extends through a fiber from the proximal end of the connector housing to the ferrule. The fiber has a distal portion potted within the ferrule. The fiber passage has a fiber take-up region configured to take-up an excess length of the fiber corresponding to the ferrule axial displacement.

Abstract: A semiconductor wafer contains the following layers in the given order: a monocrystalline substrate wafer (1) consisting predominantly of silicon and having a (111) surface orientation, a monocrystalline layer (3) of Sc2O3 having a (111) surface orientation, a monocrystalline layer (4) of ScN having a (111) surface orientation, and a monocrystalline layer (6) of AlzGa1-zN with 0?z?1 having a (0001) surface orientation, the semiconductor wafers are produced by appropriate deposition of the respective layers.