Abstract: A micro-mirror array for optical coupling in a waveguide array including, a transparent body having a slanted portion, a sidewall portion, and a bottom portion, the sidewall portion and the bottom portion each respectively facing the slanted portion, and wherein a complementary shape of a conventional form off-axis mirror is arranged on the slanted portion, and a reflective coating on at least a portion of the complementary shape.

Abstract: An optical waveguide element that has improved frequency response in a high frequency region is provided. An optical waveguide element includes: a substrate that has an electro-optic effect; an optical waveguide that is formed on the substrate; a control electrode that is for modulating light waves propagating through the optical waveguide; and a reinforcing substrate that holds the substrate via an adhesion layer, and the reinforcing substrate has a low-dielectric constant portion with a lower dielectric constant than that of the reinforcing substrate at least in a part of a region in a plan view of the reinforcing substrate such that the low-dielectric constant portion partitions the reinforcing substrate in a thickness direction.

Abstract: A semiconductor device including stacked structures. The stacked structures include at least two chalcogenide materials or alternating dielectric materials and conductive materials. A liner including alucone is formed on sidewalls of the stacked structures. Methods of forming the semiconductor device are also disclosed.

Abstract: Substrates with transparency to infrared body radiation and opacity in the visible light spectrum are provided and systems and methods for creation thereof are provided. The IR radiation transparent substrate is IR radiation transparent and visible light opaque with enough breathability and softness to make it suitable for use in garments for body thermal regulation. Further, the IR radiation transparent substrate is created utilizing nanofiber technology to form specific sized micro pores between the nanofibers.

Abstract: Conventional approaches to integrating waveguides within standard electronic processes typically involve using a dielectric layer, such as polysilicon, single-crystalline silicon, or silicon nitride, within the in-foundry process or depositing and patterning a dielectric layer in the backend as a post-foundry process. In the present approach, the back-end of the silicon handle is etched away after in-foundry processing to expose voids or trenches defined using standard in-foundry processing (e.g., complementary metal-oxide-semiconductor (CMOS) processing). Depositing dielectric material into a void or trench yields an optical waveguide integrated within the front-end of the wafer. For example, a shallow trench isolation (STI) layer formed in-foundry may serve as a high-resolution patterning waveguide template in a damascene process within the front end of a die or wafer.

Abstract: A SOI device may include a waveguide adapter that couples light between an external light source—e.g., a fiber optic cable or laser—and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device—e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer.

Abstract: A connector includes a ferrule assembly having a ferrule, a hub and a spring, the ferrule having a distal face accessible at a distal end of the connector housing, the ferrule being movable in a proximal direction relative to the connector housing. The distal and proximal positions are separated by an axial displacement distance. The ferrule proximal movement is against the spring's bias. The cable of the assembly includes an optical fiber contained within a jacket and also a strength layer between the fiber and the jacket that is anchored to the connector housing. The fiber extends through a fiber from the proximal end of the connector housing to the ferrule. The fiber has a distal portion potted within the ferrule. The fiber passage has a fiber take-up region configured to take-up an excess length of the fiber corresponding to the ferrule axial displacement.

Abstract: A method of manufacturing an optical device is disclosed. The method includes forming a waveguide in a glass plate. The method further includes scanning the glass plate with a laser beam directed at an acute angle with respect to a first surface to form a mirror trench in the glass plate. Scanning the glass plate with the first laser beam includes pulses of the laser beam that have a duration between 2 and 500 femtoseconds. The method also includes filling the mirror trench with a reflective material and depositing a cladding layer over the waveguide and mirror trench.

Abstract: Provided is a resin optical waveguide containing a core, under cladding and over cladding, in which the resin optical waveguide has portions having a core width varying along a light propagation direction, the maximum core width is 4 to 10 ?m, and the minimum core width of 1 ?m or more and less than 4 ?m, when the length of a portion S at which the core width is 1 ?m or more and less than 4 ?m is LS and the length of a portion at which the core width is 4 to 10 ?m is LL, the proportion of LS to the total length is 0.1 to 40%, and the portion S contains neither a certain bubble defect nor a certain defect inside the core and in a vicinity of a core-cladding interface.

Abstract: A phase controller for controlling the phase of a light signal in a surface waveguide and a method for its fabrication are disclosed. The phase controller controls the phase of the light signal by inducing stress in the waveguide structure, thereby controlling the refractive indices of at least some of its constituent layers. The phase controller includes a phase-control element formed on topographic features of the top cladding of the waveguide, where these features (1) provide a shape to the phase-control element that matches the shape of the mode field of the light signal and (2) give rise to stress-concentration points that focus and direct induced stress into specific regions of the waveguide structure, thereby providing highly efficient phase control. As a result, the phase controller can operate at a lower voltage, lower power, and/or over a shorter interaction length than integrated-optic phase controllers of the prior art.

Abstract: A thermoelectric generator includes a perovskite dielectric substrate containing Sr and Ti and having electric conductivity by being doped to n-type; an energy filter formed on a top surface of the perovskite dielectric substrate, the energy filter including a first perovskite dielectric film, which contains Sr and Ti, has electric conductivity by being doped to n-type, and has a conduction band at an energy level higher than that of the perovskite dielectric substrate; a first electrode formed in electrical contact with a bottom surface of the perovskite dielectric substrate; and a second electrode formed in electrical contact with a top surface of the energy filter. The thermoelectric generator produces a voltage between the first and second electrodes by the top surface of the energy filter being exposed to a first temperature and the bottom surface of the perovskite dielectric substrate being exposed to a second temperature.

Abstract: In an optical waveguide section of an SIS type having a configuration of stacking a second semiconductor layer over a first semiconductor layer with a dielectric layer interposed, the first semiconductor layer is electrically coupled to a first electrode at a first lead-out section where the second semiconductor layer is not stacked. Further, the second semiconductor layer is electrically coupled to a second electrode at a second lead-out section not overlapping with the first semiconductor layer. As a result, when a contact hole for forming the second electrode is formed by dry etching, the dielectric layer between the first semiconductor layer and the second semiconductor layer is not damaged or broken and hence short-circuit failure between the first semiconductor layer and the second semiconductor layer can be prevented. The reliability of the optical waveguide section therefore can be improved.

Abstract: An apparatus includes an optical rib waveguide on a substrate, the optical rib waveguide further includes: a slab layer of silicon, a shallow rib of silicon in height that tapers laterally along a taper region, a deep rib of silicon that meets the shallow rib along the taper region of the shallow rib, and wherein the deep rib and the shallow rib have a same width, and wherein the shallow rib has a greater height than the deep rib, a core of silicon that tapers laterally in a range of 50-90% and extends on top of the deep rib and the shallow rib, and a cladding layer of silicon oxide that covers the slab, core, deep rib, and shallow rib.

Abstract: A system and method for manufacturing semiconductor devices is provided. An embodiment comprises using an etchant to remove a portion of a substrate to form an opening with a 45° angle with a major surface of the substrate. The etchant comprises a base, a surfactant, and an oxidant. The oxidant may be hydrogen peroxide.

Abstract: A waveguide mode expander couples a smaller optical mode in a semiconductor waveguide to a larger optical mode in an optical fiber. The waveguide mode expander comprises a shoulder and a ridge. In some embodiments, the ridge of the waveguide mode expander has a plurality of stages, the plurality of stages having different widths at a given cross section.

Abstract: A waveguide coupler includes a first waveguide and a second waveguide. The waveguide coupler also includes a connecting waveguide disposed between the first waveguide and the second waveguide. The connecting waveguide includes a first material having a first index of refraction and a second material having a second index of refraction higher than the first index of refraction.

Abstract: An optical device includes a waveguide on a base and a taper on the base. The waveguide and the taper are optically aligned such that the taper and the waveguide exchange light signals during operation of the device. The taper is configured to guide the light signals through a taper material and the waveguide is configured to guide the light signals through a waveguide medium. The taper material and the waveguide medium are different materials and/or have different indices of refraction.

Abstract: It is difficult to actualize a semiconductor optical waveguide having desired properties that reflect design even when process technology for a semiconductor electronic circuit is applied as is to the production of a semiconductor optical waveguide. The present invention includes: a substrate; a semiconductor optical waveguide structure arranged on the substrate; a planar region formed around the semiconductor optical waveguide structure on the substrate; and a semiconductor dummy structure that is arranged around the planar region on the substrate and is formed of a plurality of dummy patterns, wherein the semiconductor optical waveguide structure includes a line-symmetric pattern on a plane that is parallel to the substrate; and the plurality of dummy patterns are arranged symmetrically with respect to the symmetry axis of the line-symmetric pattern.

Abstract: A strip of sacrificial semiconductor material is formed on top of a non-sacrificial semiconductor material substrate layer. A conformal layer of the non-sacrificial semiconductor material is epitaxially grown to cover the substrate layer and the strip of sacrificial semiconductor material. An etch is performed to selectively remove the strip of sacrificial semiconductor material and leave a hollow channel surrounded by the conformal layer and the substrate layer. Using an anneal, the conformal layer and the substrate layer are reflowed to produce an optical waveguide structure including the hollow channel.

Abstract: An interposer chip for coupling light between an array of fibers and an array of optical waveguides on a second photonic chip. The interposer chip has an array of V-grooves for aligning the ends of the fibers to corresponding ends of an array of optical waveguides on the interposer chip. Each optical waveguide has a taper with a first end and a second end, the first end being configured to support an optical mode that couples efficiently to the mode of an optical fiber. The taper reduces the vertical mode size, so that the mode supported by the second end of the taper may be efficiently coupled to a 3-micron thick optical waveguide on the second photonic chip. The interposer chip further has a hard stop having a flat surface parallel to the optical waveguides on the interposer chip, at the interface to the second chip.

Abstract: A Mach-Zehnder modulator includes: a first arm waveguide having first to third waveguide portions, the third waveguide portion being curved to couple the first and second waveguide portions with each other; a second arm waveguide having first to third waveguide portions, the third waveguide portion being curved to couple the first and second waveguide portions with each other, and a differential signal conductor having first and second signal conductors for driving the first and second arm waveguides, respectively. The first signal conductor has a first conductor portion and a first intersecting conductor portion connected thereto. The second signal conductor has a first conductor portion and a second intersecting conductor portion connected thereto. One of the first and second intersecting conductor portions includes an upper conducting layer, and the other includes a lower conducting layer. The upper conducting layer extends on the lower conducting layer apart therefrom.

Abstract: A semiconductor nanolaser includes a rib formed by a stack of layers, in which stack central layers (33, 34, 35) forming an assembly of quantum wells are placed between a lower layer (32) of a first conductivity type and an upper layer (36) of a second conductivity type. Holes (42) are drilled right through the thickness of the rib, wherein the lower layer includes first extensions (38, 40) that extend laterally on either side of the rib, and that are coated with first metallizations (42, 44) that are located a distance away from the rib. The stack includes second extensions (45, 46) that extend longitudinally beyond said rib, and that are coated with second metallizations (47, 48).

Abstract: A slot waveguide for electro-optic modulation is provided. The slot waveguide includes a slot and Bragg gratings defined by outer walls of the slot. The Bragg gratings are configured to slow an optical signal. The slot defines a low-refractive index region and the Bragg gratings spaced apart by the slot define a high-refractive index region. The slot waveguide includes a pair of electrodes extending parallel and adjacent to the slot waveguide. The electrodes are configured to carry an electrical modulation signal to induce a change in a phase of the optical signal. The slot of the slot waveguide is at least partially filled with an electro-optic polymeric material poled in a direction orthogonal to a direction of propagation of the optical signal in the slot waveguide.

Abstract: An integrated circuit is described. This integrated circuit includes an optical waveguide defined in a semiconductor layer, and a dielectric optical waveguide disposed on the semiconductor layer and that overlaps a region of the optical waveguide. Moreover, the dielectric optical waveguide includes an optical device (such as a mirror) on a facet separating a first portion of the dielectric optical waveguide and a second portion of the dielectric optical waveguide. The facet may be at an angle relative to a plane of the dielectric optical waveguide and may include a metal layer. During operation, an optical signal conveyed by the optical waveguide is evanescent coupled to the dielectric optical waveguide. Then, the optical signal may be reflected by the optical device. For example, the angle of the facet may be 45°, so that the optical signal is reflected normal to the plane of the dielectric optical waveguide.

Abstract: Disclosed herein is a transparent glass system that includes an optical grade silicon substrate, a transparent substrate layer; a titanium dioxide transparent layer, the transparent layer having an index of refraction of 2.35 or greater; and a polycrystalline diamond layer, wherein the transparent layer is between the substrate layer and the polycrystalline diamond layer.

Abstract: An optical coupling arrangement is provided, comprising a lightwave circuit (LC), a coupling element and an optical waveguide element, wherein the lightwave circuit has a first surface area and wherein the coupling element is attached to the first surface area) such that an optical signal can be transmitted from the lightwave circuit to the coupling element. The optical waveguide element is attached to the coupling element at a first junction zone such that the optical signal can be transmitted from the coupling element to the optical waveguide element). The coupling element is configured to perform mode transformation to the optical signal transmitted from the lightwave circuit to the optical waveguide element and such that adiabatic coupling of the optical signal to the optical waveguide element is enabled. Thus, a better coupling efficiency can be achieved.

Abstract: A laser beam irradiation unit of laser processing apparatus includes a pulse laser beam oscillating unit, a condenser that condenses a pulse laser beam and emits the beam to a workpiece held by a chuck table, a dichroic mirror disposed between the pulse laser beam oscillating unit and the condenser, a strobe light irradiation unit that emits light to a path on which the dichroic mirror and the condenser are disposed, a beam splitter disposed between the strobe light irradiation unit and the dichroic mirror, and an imaging unit disposed on the path of light split by the beam splitter. A controller actuates the strobe light irradiation unit and the imaging unit according to the timing of the pulse laser beam, and detects the width of a laser-processed groove immediately after emission of the pulse laser beam on the basis of an image signal from the imaging unit.

Abstract: A laser comprising: at least one wavelength selective reflector that comprises a waveguide vertically coupled to at least one photonic crystal resonator, the waveguide and photonic crystal resonator being arranged to provide wave-vector matching between at least one mode of the photonic crystal resonator and at least one mode of the waveguide; an optical gain medium for generating light for coupling into the waveguide, and a reflector at an end of the optical gain medium, the reflector and the photonic crystal resonator defining a laser cavity. Light generated by the optical gain medium is coupled into the waveguide and coupled into the photonic crystal resonator, and partially reflected back to the optical gain medium.

Abstract: Methods of forming ion-exchanged waveguides in glass substrates are disclosed. In one embodiment, a method of forming a waveguide in an ion-exchanged glass substrate having an ion-exchanged layer extending from a surface to a depth of layer of the ion-exchanged glass substrate includes locally heating at least one band at the surface of the ion-exchanged glass substrate to diffuse ions in the ion-exchanged layer within the at least one band. A concentration of ions within the at least one band is less than a concentration of ions outside of the at least one band, and at least one waveguide is defined within the ion-exchanged layer adjacent the at least one band. In some embodiments, the at least one waveguide is embedded within the ion-exchanged glass substrate such that an upper surface of the at least one waveguide is below the surface of the glass substrate by a depth d.

Abstract: Provided are an optical-diffusion film for display which, particularly when applied to a reflective display device, can efficiently diffuse and emit an external light incident from a wide range of angles toward the front of the display device as image display light, and a reflective display device using the optical-diffusion film.

Abstract: A connector includes a ferrule assembly having a ferrule, a hub and a spring, the ferrule having a distal face accessible at a distal end of the connector housing, the ferrule being movable in a proximal direction relative to the connector housing. The distal and proximal positions are separated by an axial displacement distance. The ferrule proximal movement is against the spring's bias. The cable of the assembly includes an optical fiber contained within a jacket and also a strength layer between the fiber and the jacket that is anchored to the connector housing. The fiber extends through a fiber from the proximal end of the connector housing to the ferrule. The fiber has a distal portion potted within the ferrule. The fiber passage has a fiber take-up region configured to take-up an excess length of the fiber corresponding to the ferrule axial displacement.

Abstract: An optical Mach Zehnder modulator is described. The optical Mach Zehnder modulator may comprise a plurality of segments separated by curved waveguides. For example, an optical Mach Zehnder modulator may comprise a first waveguide arm having a first pn-junction formed therein, a second waveguide arm having a second pn-junction formed therein, a third waveguide arm coupled to the first waveguide arm via a first curved waveguide and a fourth waveguide arm coupled to the second waveguide arm via a second curved waveguide. The segments may have the same polarities. Alternatively, the segments may have opposite polarities. The different segments may be driven using different RF signals. The RF signals may be delayed from one another.

Abstract: A color changing or beam steering photonic device, which combines a high contrast metastructure (HCM) having a plurality of high index grating structures, into a low index membrane. In response to physical (or electrical) deformation of the membrane the low index gaps between adjacent grating bars changes which results in changing reflectance and transmission angles for steering a single wavelength of light and for causing a color change in said photonic device when subject to multiple light wavelengths. Deformation can result from direct physical stimulus, conversion from electrical or thermal to physical, and so forth. Refractive index change can also be initiated by carrier injection through electrodes. The apparatus is exemplified for use in color displays, beam steering, labeling micro entities, mechanical deformation sensing, camouflage, anti-counterfeiting, and other fields.

Abstract: An optical component with image compensation is formed by a plurality of optical fibers arranged and connected in the same direction. A section of the optical component includes an output face, an input face, and a lateral face. The output face is formed by sections at one end of the optical fibers respectively, and each of the sections is a perfect circle or a regular polygon. The input face is formed by sections at the other end of the optical fibers respectively, and each of the sections is noncircular or is a irregular polygonal. The lateral face extends in the same direction as the optical fibers. Thereby, images shown on display devices have preset luminous intensity no matter if users are located in front of or beside the display devices.

Abstract: A method comprises forming a plateau region and a trench region over a substrate, wherein the trench region comprises a slope and a flat bottom, depositing a reflecting layer over the flat bottom and a portion of the slope, depositing a first adhesion promoter layer over the reflecting layer, applying a first curing process to the first adhesion promoter layer, wherein, after the first curing process finishes, the reflecting layer and the first adhesion promoter layer form a first bonding interface, depositing a bottom cladding layer deposited over the first adhesion promoter layer, applying a second curing process to the bottom cladding layer to form a second bonding interface layer, depositing a core layer over the bottom cladding layer and depositing a top cladding layer over the core layer.

Abstract: A method to manufacture optoelectronic modules comprises a step of providing a first wafer comprising a plurality of first module portions, wherein each of the first module portions comprises at least one passive optical component, providing a second wafer comprising a plurality of second module portions, wherein each of the second module portions comprises at least one optoelectronic component. The wafers are disposed on each other to provide a wafer stack that is diced into individual optoelectronic modules respectively comprising one of the first and the second and the third module portions.

Abstract: An integrated circuit includes an active device for confinement of a light flux that is formed in a semiconducting substrate. A confinement rib is separated from two doped zones by two trenches. Each doped zone includes a contacting zone on an upper face. Each trench widens from a bottom wall towards the upper face of the corresponding doped zone. The widening trenches present a sidewall having a tiered profile between the trench and the doped zone. An opposite sidewall presents a straight profile.

Abstract: An organic light emitting diode display panel is disclosed, which comprises: a substrate having a light emitting region and a non-light emitting region, wherein a first electrode layer is disposed on the light emitting region, a pixel defining layer is disposed on the non-light emitting region, and the pixel defining layer has a plurality of concave structures; an organic layer disposed on the first electrode layer and the pixel defining layer; and a second electrode layer disposed on the organic layer; wherein the organic layer is discontinuous at the concave structures.

Abstract: A SOI device may include a waveguide adapter that couples light between an external light source—e.g., a fiber optic cable or laser—and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device—e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer.

Abstract: A two-dimensional photonic crystal in which are inserted four waveguides and a resonant cavity. Owing to the existence of the photonic band gap, an electromagnetic signal propagating through the device is confined within the guides and the cavity and, through the adjustment of the orientation of a dipole mode generated within the cavity, is able to function in three distinct regimes. In regime 1, subjected to an external DC magnetic field +H0, it functions as a two-way divider, with isolation of the input relative to the two outputs, and, upon reversal of the field signal, it functions as an optical key. In regime 2, with the use of a DC magnetic field ?H0, it functions as a waveguide bender, with the input isolated from the output, and, upon reversal of the field signal, functions as an optical key. In regime 3, subject to the application of an external DC magnetic field +H1, the device functions as a three-way divider.

Abstract: An optical waveguide device includes a wiring substrate, a first cladding layer formed on the wiring substrate, a base protective layer formed on the first cladding layer and formed into a certain pattern, a core layer formed on the first cladding layer and the base protective layer, a recess portion having an inclined surface and formed from the core layer to the base protective layer, an optical path conversion mirror formed on the inclined surface, and a second cladding layer formed on the first cladding layer and the core layer. A refractive index of the base protective layer is smaller than a refractive index of the core layer. A width of the base protective layer is equal to or greater than a width of the core layer.

Abstract: A heat assisted magnetic recording (HAMR) write apparatus has a media-facing surface (MFS) and includes a pole, coil(s) and a waveguide. The waveguide is optically coupled with a laser and directs energy toward the MFS. The waveguide includes an entrance, a bottom and a mode converter having a core, an inner cladding, high index layer(s) and an outer cladding. The core has sides that diverge in width. The core has a first index of refraction. The outer cladding has a second index of refraction less than the first index of refraction. The inner cladding has a third index of refraction not greater than the second index of refraction. The inner cladding is between the high index layer(s) and the core. The high index layer(s) are between the inner and outer cladding. The high index layer(s) have a high index of refraction greater than the second index of refraction.

Abstract: A reflective element for directing an optical signal into a fiber optic sensor having an optical fiber includes a plane containing a sharply defined straight line that separates between a first area of low reflectivity and a second area of high reflectivity. The plane is disposed parallel to a free end surface of the optical fiber so that the free end surface intersects the line of the reflective element, whereby relative movement between the free end surface of the optical fiber and the line in response to a physical change sensed by the fiber optic sensor induces variations in an optical signal reflected by the reflective element through the optical fiber, which variations allow measurement of the physical change.

Abstract: It is difficult to actualize a semiconductor optical waveguide having desired properties that reflect design even when process technology for a semiconductor electronic circuit is applied as is to the production of a semiconductor optical waveguide. The present invention includes: a substrate; a semiconductor optical waveguide structure arranged on the substrate; a planar region formed around the semiconductor optical waveguide structure on the substrate; and a semiconductor dummy structure that is arranged around the planar region on the substrate and is formed of a plurality of dummy patterns, wherein the semiconductor optical waveguide structure includes a line-symmetric pattern on a plane that is parallel to the substrate; and the plurality of dummy patterns are arranged symmetrically with respect to the symmetry axis of the line-symmetric pattern.

Abstract: A method of fabricating a waveguide device is disclosed. The method includes providing a substrate having an elector-interconnection region and a waveguide region and forming a patterned dielectric layer and a patterned redistribution layer (RDL) over the substrate in the electro-interconnection region. The method also includes bonding the patterned RDL to a vertical-cavity surface-emitting laser (VCSEL) through a bonding stack. A reflecting-mirror trench is formed in the substrate in the waveguide region, and a reflecting layer is formed over a reflecting-mirror region inside the waveguide region. The method further includes forming and patterning a bottom cladding layer in a wave-tunnel region inside the waveguide region and forming and patterning a core layer and a top cladding layer in the waveguide region.

Abstract: A waveguide mode expander couples a smaller optical mode in a semiconductor waveguide to a larger optical mode in an optical fiber. The waveguide mode expander comprises a shoulder made of crystalline silicon and a ridge made of non-crystalline silicon (e.g., amorphous silicon). In some embodiments, the ridge of the waveguide mode expander has a plurality of stages, the plurality of stages have different widths and/or thicknesses at a given cross section.

Abstract: A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes a processed semiconductor substrate. The processed semiconductor substrate includes active electronic components. The semiconductor structure also includes a dielectric layer that covers, at least partially, the processed semiconductor substrate. An interface layer that is suitable for growing optically active material on the interface layer is bonded to the dielectric layer. An optical gain layer and the processed semiconductor substrate are connected through the dielectric layer by electric and/or optical contacts.

Abstract: This disclosure generally relates to high-speed fiber optic networks that use light signals to transmit data over a network. The disclosed subject matter includes devices and methods relating to header subassemblies and/or optoelectronic subassemblies. In some aspects, the disclosed devices and methods may relate to a header subassembly that can include: a multi-layer substrate with a bottom layer, a top layer having top thin film signal lines, and one or more intermediate layers having thick film traces between the top layer and the bottom layer, the thick film traces electrically coupled to the top thin film signal lines; and optoelectronic components positioned over the multi-layer substrate and electrically coupled with the signal lines.

Abstract: The present invention is directed to synthetic anti-inflammatory peptides and use thereof in the treatment and prevention of inflammatory and fibrotic conditions. Specifically, the invention relates in some embodiments to short isolated peptides having the amino acid sequence Phe-Lys-Glu (FKE), Tyr-Lys-Glu (YKE) or comprising a plurality of these sequences that may be flanked by Ala/Gly (A/G) linkers. The invention further relates in some embodiments to methods for inhibiting scar formation and for treating and alleviating IL-10 dependent conditions.

Abstract: A connector includes a ferrule assembly having a ferrule, a hub and a spring, the ferrule having a distal face accessible at a distal end of the connector housing, the ferrule being movable in a proximal direction relative to the connector housing. The distal and proximal positions are separated by an axial displacement distance. The ferrule proximal movement is against the spring's bias. The cable of the assembly includes an optical fiber contained within a jacket and also a strength layer between the fiber and the jacket that is anchored to the connector housing. The fiber extends through a fiber from the proximal end of the connector housing to the ferrule. The fiber has a distal portion potted within the ferrule. The fiber passage has a fiber take-up region configured to take-up an excess length of the fiber corresponding to the ferrule axial displacement.