Abstract: The invention discloses a developing apparatus and a developing process. Wherein the developing process comprises following steps. First, a developing apparatus and a substrate are provided, wherein the developing apparatus comprises a conveyer and a nozzle. Then, the substrate is conveyed along a first direction by the conveyer, and the nozzle is driven to move along a second direction opposite to the first direction, wherein the nozzle sprays a developer over the substrate as moving. As mentioned above, the non-uniformity of development can be reduced.

Abstract: A coating and developing system is capable of preventing the contamination of a substrate with particles while the same coats a surface of a substrate with a resist film and develops the resist film after the substrate has been processed by immersion exposure. The coating and developing system includes: a processing block including coating units for forming a resist film on a surface of a substrate and developing units for processing the resist film formed on the substrate with a developer, and an interface block connected to the processing block and an exposure system for carrying out an immersion exposure process. The interface block includes: substrate cleaning units for cleaning the substrate processed by the immersion exposure process, a first carrying mechanism and a second carrying mechanism. The first carrying mechanism carries a substrate processed by immersion exposure to the substrate cleaning unit. The second carrying mechanism carries the substrate cleaned by the substrate cleaning unit.

Abstract: A coating and developing system includes a resist film forming unit block and antireflection film forming unit blocks stacked up in layers to form a resist film and an antireflection film underlying the resist film and an antireflection film overlying the resist film in a small space. The coating and developing system can cope with a case where antireflection films are formed and a case where any antireflection film is not formed. Film forming unit blocks, namely, a TCT layer, a COT layer and a BCT layer, and developing unit blocks, namely, DEV layers, are stacked up in layers in a processing block. The TCT layer, the COT layer and the BCT layer are used selectively in the case where antireflection films are formed and where no antireflection film is formed. The coating and developing system is controlled by a simple carrying program.

Abstract: In a substrate processing apparatus of the present invention, a buffer bath is provided at any point in a supplying passage of a processing solution supplying part, and a micro bubble generator is provided in the buffer bath. When a substrate is processed, large quantities of micro bubbles can be generated and stored in the buffer bath, and the micro bubbles can be supplied from the buffer bath to a processing bath. This enables the large quantities of micro bubbles to be supplied to the surrounding of the substrate, while the use of the small micro bubble generator avoids an increase in the size of the substrate processing apparatus.

Abstract: An integrated lithographic fabrication cluster system, as presented herein, comprises an exposure apparatus to expose a pattern onto a substrate with an associated exposure controller to control the exposure apparatus and a track apparatus interconnecting a plurality of processing modules with an associated track controller to control the track apparatus. The cluster system also comprises a wafer handling apparatus coupled to the exposure apparatus and track apparatus that is configured to transfer substrates between the processing modules utilized by the exposure apparatus and track apparatus and a wafer handling controller to control the wafer handling apparatus. The cluster system further comprises a cluster controller that communicates control information to at least one of the exposure controller, the track controller, and the wafer handling controller to manage operations of the exposure apparatus, the track apparatus, and the wafer handling apparatus during the lithographic fabrication process.

Abstract: A system for photolithography may include an exposure chamber providing a first isolated environment, an exposure stage in the exposure chamber, a radiation source, an interface chamber providing a second isolated environment, a port, a post exposure bake heater in the interface chamber, and a wafer handler. The exposure stage may be configured to receive a wafer having photoresist thereon to be exposed, and the radiation source may be configured to provide exposing radiation to the wafer being exposed. The port may be configured to allow wafer transport between the first and second isolated environments of the exposure and interface chambers, and the post exposure bake heater may be configured to bake the wafer after exposure.

Abstract: A coating and developing system includes a resist film forming unit block and antireflection film forming unit blocks stacked in layers to form a resist film and an antireflection film underlying the resist film and an antireflection film overlying the resist film in a small space. The coating and developing system can cope with either of a case where antireflection films are formed and where any antireflection film is not formed. Film forming unit blocks: TCT layer B3, a COT layer B4 and a BCT layer B5, and developing unit blocks: DEV layers B1 and B2, are stacked up in layers in a processing block S2. The TCT layer B3, the COT layer B4 and the BCT layer B5 are used selectively where antireflection films are formed and any antireflection film is not formed. The coating and developing system is controlled by a carrying program and software.

Abstract: A coating and developing apparatus includes a process block which includes a unit block for coating-film formation which applies a resist, and a unit block for development which performs a developing process, and is separately provided with a coating-film-formation-unit-block transfer mechanism and a developing-process-unit-block transfer mechanism. After a substrate after exposure is transferred to a transfer stage from the interface-block transfer mechanism, the timing for the developing-process-unit-block transfer mechanism to receive the substrate is adjusted in such a way that the time from exposure of the substrate to transfer of the substrate to a heating unit becomes a preset time.

Abstract: Disclosed is a method for replacing a process instrument in a processing apparatus, in which an target object is loaded by transfer means into a processing unit and is subjected to a process by use of the process instrument. The method includes confirming that a process on the target object is finished in a processing unit designated as a process instrument replacement target, and providing information that a process instrument replacing operation is permitted to start. The method further includes, when a shutter of the processing unit designated as the process instrument replacement target is closed to perform a process instrument replacing operation and an operation prohibition state is thereby applied to the transfer means, canceling the operation prohibition state to allow the transfer means to perform a load/unload operation relative to a processing unit not designated as a process instrument replacement target.

Abstract: A substrate processing apparatus comprises an interface block. An exposure device is arranged adjacent to the interface block. The interface block includes a placement/bake unit. A substrate that has been subjected to exposure processing in the exposure device is subjected to cleaning and drying processing in a second cleaning/drying processing unit, and is then transported to a placement/heating unit. In the placement/heating unit, the substrate is subjected to post-exposure bake processing.

Abstract: A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, a resist cover film processing block, a resist cover film removal block, and an interface block. An exposure device is arranged adjacent to the interface block. The interface block includes a substrate replacement group. The substrate replacement group has a stack of three cleaning/drying processing units. The cleaning/drying processing unit subjects the substrate after exposure processing to cleaning and drying processing.

Abstract: A stage cleaning substrate for use in the operation of cleaning a substrate stage within an exposure unit compatible with immersion exposure and a dummy substrate for use during the adjustment of an exposure position of a pattern image are held in a cleaning substrate housing part and a dummy substrate housing part, respectively, provided in a substrate processing apparatus. For the operation of cleaning the substrate stage or an alignment operation within the exposure unit, the stage cleaning substrate or the dummy substrate is transported from the substrate processing apparatus to the exposure unit. The process of cleaning the stage cleaning substrate or the dummy substrate is performed in a cleaning processing unit of the substrate processing apparatus immediately before or immediately after the operation of cleaning the substrate stage or the alignment operation.

Abstract: A substrate processing apparatus comprises an interface block. An exposure device is arranged adjacent to the interface block. The interface block comprises first and second cleaning/drying processing units. A substrate W is subjected to cleaning and drying processing before exposure processing in the first cleaning/drying processing unit, while being subjected to cleaning and drying processing after the exposure processing in the second cleaning/drying processing unit.

Abstract: Semiconductor device fabrication equipment and a method of using the same minimize the total time that a wafer spends being transferred through the equipment and the number of times the wafer is transferred between respective parts of the equipment. The semiconductor fabrication equipment includes a first apparatus used for performing a first process on a wafer, a second apparatus linked in-line to the first apparatus and used for performing a second process consecutive to the first process with respect to the fabrication of a semiconductor device from the wafer, and a speed regulator connected to the first and second apparatuses. The speed regulator detects durations of the first and second processes, respectively, compares the durations, and makes a determination as to whether the duration of the first process is shorter than the duration of the second process.

Abstract: A coating and developing system includes a resist film forming unit block and antireflection film forming unit blocks stacked up in layers to form a resist film and an antireflection film underlying the resist film and an antireflection film overlying the resist film in a small space. The coating and developing system is capable of coping with either of a case where antireflection films are formed and a case where any antireflection film is not formed and needs simple software. Film forming unit blocks, namely, a TCT layer B3, a COT layer B4 and a BCT layer B5, and developing unit blocks, namely, DEV layers B1 and B2, are stacked up in layers in a processing block S2. The TCT layer B3, the COT layer B4 and the BCT layer B5 are used selectively in the case where antireflection films are formed and the case where any antireflection film is not formed. The coating and developing system is controlled by a simple carrying program and simple software.

Abstract: A developing apparatus and method is provided in which the use amount of a developing solution can be reduced without deteriorating the accuracy of development. The developing apparatus comprises a new solution tank for storing an unused developing solution and a used solution tank for storing a used developing solution which is withdrawn from a material to be treated. A new solution feeding nozzle extends from the new solution tank, and the tip end of the nozzle faces toward the upper portion of the cup of each developing unit. A used solution feeding nozzle extends from the used solution tank, and the tip end of the nozzle faces toward the upper portion of the cup of each developing unit.

Abstract: A wafer flow recipe is prepared. Based on this wafer flow recipe, there are estimated and calculated respectively a PCD time from a time point at which a process for coating a resist liquid on a substrate by a coating unit has been terminated to a time point at which a first heating process is started at a first heating unit, a PAD time from a time point at which the first heating process has been terminated at the first heating unit to a time point at which an exposure process is started, and a PED time from a time point at which the exposure has been terminated to a time point at which a second heating process is started at a second heating unit. Then, these estimated times are displayed.

Abstract: A method of controlling a track apparatus in a lithocell apparatus arrangement, is presented herein. The lithocell includes a lithographic exposure apparatus configured to expose substrates and a track apparatus configured to prepare substrates before exposure and develop substrates after exposure. The method includes predicting times at which the lithographic exposure apparatus will be available to accept a prepared substrate for exposure from the track apparatus, and adjusting a rate at which the track apparatus prepares substrates so that a substrate is prepared in time for acceptance by the lithographic exposure apparatus.

Abstract: In this developing method and apparatus, a concentration measuring unit 222 picks part of developing fluid in a blending tank 186 to measure the resist concentration by an absorption photometry and feeds the detected resist concentration to a control unit 240. The control unit 240 controls respective valves 210, 212, 216 of a TMAH concentrate solution 200, a solvent pipe 204 and a drain pipe 208 in a manner that the developing fluid in the blending tank 186 has a TMAH concentration corresponding to a measured resist-concentration value to accomplish a constant developing rate, performing component control of the developing fluid. The developing fluid transferred from the blending tank 186 to a supply tank 188 is fed to a developer nozzle DN in a developing section 126 through a developer pipe 224 owing to the drive of a pump 228. Accordingly, even if the developing fluid is reused in the developing process in multiple times, it is possible to make sure of the uniformity in development.

Abstract: The present invention provides a resist development processor consisting of a development processing chamber for storing a resist substrate having an exposed resist on the substrate and for developing the exposed resist by means of a development solvent consisting of a supercritical fluid; and a supercritical fluid container for storing a supercritical fluid, where the supercritical fluid container is connected to the development processing chamber through a valve.

Abstract: An interface unit for transferring objects, such as substrates, is presented. The interface unit includes a first object transfer path to transfer objects between a track configured to process objects and a lithographic exposure unit configured to expose objects, wherein the interface unit is also provided with a second object transfer path extending through a closable transfer opening to an external space to transfer objects between the external space and the lithographic exposure unit. Furthermore, the invention relates to a lithographic apparatus provided with a lithographic exposure unit and an interface unit according to the invention.

Abstract: During a series of processes performed on a substrate in a substrate processing apparatus, processing history data containing items such as transport time, processing time, plate temperature, revolution per minute of spin motors and flow rate of solutions is obtained for each substrate. When a substrate with a process defect is detected in an inspection block, the processing history data on that substrate is compared with reference data. A processing unit or transport robot in which processing history data falls outside a predetermined range set as the reference data is judged as abnormal, whereby a defective processing unit or defective transport robot is identified. Thus provided is a substrate processing apparatus capable of identifying a defective processing unit or defective transport robot quickly and accurately.

Abstract: A method, apparatus and computer product for processing of substrates in at least a part of a substrate processing system is provided. In an embodiment, the method includes obtaining, using a processing unit, at least one of a rate of processing and a time of processing of a plurality of substrate lots to be introduced into a part of the substrate processing system and determining, using the processing unit, an order of introduction of the plurality of substrate lots into the part of the substrate processing system to at least one of increase the rate of processing and decrease the time of processing of the plurality of substrate lots.

Abstract: A lithography equipment is provided, which includes: a coater coating a substrate with resist; a first buffer storing the substrate supplied from the coater; a baker baking the substrate supplied from the first buffer; a first turn table rotating the substrate supplied from the baker; a first transferor communicating the substrate with the coater, the first buffer, the baker, and the first turntable; an exposer exposing light to the substrate supplied from the first turntable; a developer developing the resist on the substrate supplied from the exposer; and a second transferor communicating the substrate with the first turntable, the exposer, and the developer.

Abstract: Since it is possible to exhaust air from a first peripheral region ? around a substrate undergoing processing and further exhaust air from a second peripheral region ? between the first peripheral region and the substrate, it is possible to reduce the effects of air flow on a developing solution on a substrate, and to enable the developing solution used in development processing to act effectively on the exposed resist on the substrate.

Abstract: An apparatus for developing a polymeric film without the need for a water rinse step is disclosed. An object having a surface supporting a polymeric film is placed onto a support region within a pressure chamber of the apparatus. A fluid and developer is introduced into the pressure chamber and the object is processed at supercritical conditions to develop the polymeric film such that the polymeric film is not substantially deformed. The pressure chamber is then vented.

Abstract: Disclosed herein is an apparatus for conveying substrates, which is capable of efficiently conveying large substrates and has a function to temporarily store the substrate in a buffer unit. The apparatus includes a substrate support unit, a conveying unit, and the buffer unit. The substrate support unit supports the substrate thereon. The conveying unit sequentially conveys the substrate support unit to a plurality of processing units. The buffer unit is provided at a predetermined portion of the conveying unit to move the substrate support unit upward away from the conveying unit in a vertical direction, thus temporarily storing the substrate support unit therein while spacing the substrate support unit apart from the conveying unit. The substrate conveying apparatus thus efficiently conveys the substrates, regardless of sizes of the substrates, while temporarily storing the substrates to buffer a difference in the processing time.

Abstract: The present invention provides a resist development processor consisting of a development processing chamber for storing a resist substrate having an exposed resist on the substrate and for developing the exposed resist by means of a development solvent consisting of a supercritical fluid; and a supercritical fluid container for storing a supercritical fluid, where the supercritical fluid container is connected to the development processing chamber through a valve.

Abstract: Apparatus for processing substrates according to a predetermined photolithography process includes a loading station in which the substrates are loaded, a coating station in which the substrates are coated with a photoresist material, an exposing station in which the photoresist coating is exposed to light through a mask having a predetermined pattern to produce a latent image of the mask on the photoresist coating, a developing station in which the latent image is developed, an unloading station in which the substrates are unloaded and a monitoring station for monitoring the substrates with respect to predetermined parameters of said photolithography process before reaching the unloading station.

Abstract: A development apparatus for discharging a developer onto a surface of a semiconductor substrate (15) comprises a nozzle pipe (13) for supplying the developer, and a nozzle (14) having a shape of a spoon with a taper and discharging the developer supplied by the nozzle pipe onto the surface of the substrate. The nozzle sprays the developer onto the surface of the substrate at any spray angle under a low and constant pressure.

Abstract: There is disclosed a substrate treating method comprising supplying a treating solution onto a substrate, and continuously discharging a first cleaning solution to the substrate from a first discharge region disposed in a nozzle, while moving the nozzle and substrate with respect to each other in one direction, wherein a length of a direction crossing at right angles to the direction of the first discharge region is equal to or more than a maximum diameter or longest side of the substrate, the nozzle continuously spouts a first gas to the substrate from a first jet region, and the length of a direction crossing at right angles to the direction of the first jet region is equal to or more than the maximum diameter or longest side of the substrate.

Abstract: A system is provided for adjusting a photo-exposure time of a manufacturing apparatus for semiconductor devices. The system for adjusting the photo-exposure time includes a photo-exposure unit whose photo-exposure time is adjustable according to one or more adjustment signals, a pre-exposure step influence prediction unit that obtains pre-exposure step processing information and extracts parameters that may influence a resulting pattern during photo-exposure, and provides this information as feed forward data, an inspection unit that checks processed steps during a certain period after photo-exposure and provides an inspection value as a feed back data, and a central processing unit that receives the feed forward and feedback data and, by means of a predetermined calculation method, generates the one or more adjustment signals, which are used to adjust the photo-exposure time.

Abstract: A substrate which has been subjected to heat processing in any of hot plate units is transferred to a normal cooling unit by a transfer device and subjected to cooling processing to some extent, and then transferred to a high accuracy cooling unit and subjected to cooling processing with high accuracy, and thereafter transferred to any of coating units or a developing units. Thereby, the substrate can be subjected to the cooling processing with high accuracy and thereafter to coating processing with no increase in apparatus cost and with no decrease in throughput.

Abstract: A substrate processing method comprises stopping the transfer of a head substrate of a succeeding lot for a period which is an integral multiple of a cycle time after a last substrate of a preceding lot is transferred from a cassette section to a processing section by a transfer mechanism, executing dummy dispense of a predetermined time by a solution processing unit during the substrate transfer stop period, and transferring the head substrate of the succeeding lot to the processing section by the transfer mechanism after the dummy dispense.

Abstract: A developing method comprises determining in advance the relation of resist dissolution concentration in a developing solution and resist dissolution speed by the developing solution, estimating in advance the resist dissolution concentration where the resist dissolution speed is a desired speed or more from the relation, and developing in a state in which the resist dissolution concentration in the developing solution is the estimated dissolution concentration or less.

Abstract: In a developing processing of a wafer having a resist film low in the dissolving rate in a developing solution formed thereon and subjected to an exposure treatment, a developing solution of a low concentration is supplied first onto a wafer and the wafer is left to stand for a prescribed time to permit a developing reaction to proceed, followed by further supplying a developing solution having a concentration higher than that of the developing solution supplied first onto the wafer, leaving the substrate to stand and subsequently rinsing the wafer, thereby improving the uniformity of the line width in the central portion and the peripheral portion of the wafer.

Abstract: A resist coating/developing system comprises a cassette station, a process station, and an interface station. A second wafer transfer member for transferring the wafer from a high precision temperature control unit mounted to the interface station to an in-stage of a light exposure device provisionally disposes the wafer held by the second wafer transfer member on a restoration unit in the case where the wafer was taken out from the high precision temperature control unit because it was possible to transfer the wafer onto the in-stage, but it was rendered impossible later to transfer the wafer W onto the in-stage.

Abstract: The present invention relates to a method for heat processing a substrate. After a coating film is formed on the substrate, the substrate is baked at a predetermined high temperature. The baking step is performed by first increasing the substrate temperature from a predetermined low temperature to a predetermined intermediate temperature that is lower than a predetermined reaction temperature at which the coating film reacts. Next, a second baking step maintains the substrate at the predetermined intermediate temperature for a predetermined period of time, and is followed by a third step of increasing the temperature of the substrate to the predetermined high temperature that is higher than the predetermined reaction temperature. This results in uniform temperature within the surface of the substrate when the temperature of the substrate reaches the reaction temperature. Consequently, a chemical reaction due to heat processing of the coating film within the surface of the substrate is performed uniformly.

Abstract: A resist film is formed out of a resist material on a substrate, and then pre-baked. Next, the pre-baked resist film is exposed to extreme ultraviolet radiation through a photomask. Then, the exposed resist film is developed, thereby defining a resist pattern on the substrate. The pre-baking and exposing steps are carried out in a vacuum without subjecting the resist film to the air.

Abstract: In a developing method for performing developing treatment of a substrate by supplying a developing solution onto a resist film formed on a surface of the substrate, the present invention controls a zeta potential of the surface of the substrate at a predetermined potential in the same polarity as that of a zeta potential of insoluble substances floating in the developing solution, thereby preventing or reducing the adhesion of the insoluble substances to the resist film and the substrate. This remedies the occurrence of development defects. The adhesion of the insoluble substances to the resist film and the substrate can also be prevented or inhibited by supplying an acid liquid to a liquid on the substrate, or controlling a pH value of the liquid on the substrate to control an absolute value of the zeta potential of the insoluble substances.

Abstract: Embodiments of the present invention provide a developing method, which can efficiently prevent the developing solution from remaining on the backside surface of the wafer, so as to avoid the influence of the contamination on the subsequent processes. In one embodiment, a developing method comprises providing a wafer in a reaction space, wherein the wafer has an exposed photoresist thereon; coating a developing solution on a surface of the wafer; rotating the wafer; rinsing a normal surface and a backside surface of the wafer; and stopping rinsing the normal surface of the wafer while keeping rinsing the backside surface of the wafer for a specific time period.

Abstract: Improved index prints for photofinishing services are provided where the imagettes are grouped by event or subject matter. Permanently attached index print labels incorporating these and other features are provided for digital still image storage devices are also provided. A magnifying storage case which allows easier viewing of the index prints is also provided.

Abstract: Disclosed herein are a method and apparatus for efficiently processing workpieces which are developed using a liquid developer. According to the invention a first set of workpieces is obtained from an imaging station, a second set of workpieces is obtained from a workpiece collection device, and the workpieces from the first and second sets are aligned in a contiguous arrangement, with the workpieces from the first set preferably being interspersed with those from the second set. Developer is then applied to the group of contiguous workpleces, thereby reducing the amount of overrun or overspray of developer that would otherwise result from individual processing of workpieces. The invention is particularly well-suited for use in preparing lithographic printing plates.

Abstract: Robotic reticle manipulators are disclosed for use in holding and conveying, with good stability, thin, circular reticles as used in charged-particle-beam microlithography. A manipulator embodiment includes at least one arm configured for executing movements in the X-, Y-, and Z-directions. Connected distally to the at least one arm is a U-shaped fork (as an exemplary reticle-support member) defining recessed surfaces and vacuum ports for holding the reticle at the reticle's narrow handling zone located along the periphery of the reticle. Each vacuum port includes an upwardly extending lip that defines, on its “upward”-facing surface, a respective reticle-contact surface. Three such vacuum ports are provided on the fork and are nearly equidistantly separated from one another. Thus, as the reticle is being held and conveyed by the manipulator, the reticle is securely held to prevent reticle damage.

Abstract: A developing apparatus which enables the time necessary for a development reaction to be shortened and permits uniform development includes a chuck device with a support portion whose top surface is a horizontal surface and a spinner disposed in the middle of this support portion. The support portion and the spinner are provided within an antiscattering cup. A groove which vacuum adsorbs a substrate W to be treated is formed on the top surface of the spinner, a pipe which forms a circulation path is disposed within the groove formed on the top surface of the support portion, and a cleaning nozzle which cleans a developing solution which has flown behind the rear surface of the substrate W is disposed in a position which is nearest to the inside diameter of the top surface of the support portion. On the other hand, in a nozzle device, a spray nozzle is attached to a horizontally reciprocating arm via a columnar support.

Abstract: A substrate treating apparatus disclosed herein realizes improved throughput. The substrate treating apparatus according to this invention includes an antireflection film forming block, a resist film forming block and a developing block arranged in juxtaposition. Each block includes chemical treating modules, heat-treating modules and a single main transport mechanism. The main transport mechanism transports substrates within each block. Transfer of the substrates between adjacent blocks is carried out through substrate rests. The main transport mechanism of each block is not affected by movement of the main transport mechanisms of the adjoining blocks. Consequently, the substrates may be transported efficiently to improve the throughput of the substrate treating apparatus.

Abstract: A process tool, preferably a spin coater, includes a set of at least three arms and an adjustable rinse nozzle. The arms lift a substrate, e.g. a semiconductor wafer, from a chuck inside the process chamber after having performed the corresponding manufacturing step, e.g. coating. The contact area between the arms and the substrate is as small as possible. The rinse nozzle dispenses a solvent liquid onto the backside of the substrate, thereby removing contaminating particles located at the area of contact between the vacuum channels of the chuck and the substrate. The set of arms rotates for a homogeneous cleaning. A gas flowing out of vacuum ports of the chuck prevents the vacuum ports from being obstructed with particles. While the substrate is being lifted, the chuck can also be cleaned by dispensing the solvent liquid onto the chuck.

Abstract: The present invention relates to a method for developing a photoresist pattern. The method consists of mixing a concentrated chemical solution with a solvent to obtain a diluted chemical solution of a predetermined concentration. In this method, the mixing is done in a fabrication facility where the substrates are processed. The diluted chemical solution is then applied onto the photoresist pattern. Analysis of the pattern is then carried out to detect any defects or pattern collapse on the substrate. In the event that defects and/or pattern collapse occur, the predetermined concentration is adjusted to reduce the phenomenon.

Abstract: A substrate (SW) is rotatably held in an approximately horizontal position by a wafer holding and rotation mechanism (810). One end of a rinsing liquid supply nozzle (840) is rotatably supported by a rinsing liquid supply nozzle rotation supporting mechanism (850) to pass over the substrate (SW). In response to rotation of the rinsing liquid supply nozzle (840), the rotation axis of the rinsing liquid supply nozzle (840) moves in a direction closer to or away from the rotation axis of the substrate (SW), whereby the amount of projection of a tip portion of the rinsing liquid supply nozzle (840) is reduced.

Abstract: A developing apparatus for organic electroluminescent display panels comprises a developing unit for supplying a developing solution to be uniformly dispensed to the surface of an organic electroluminescent display panel by immersing the organic electroluminescent display panel into the developing solution or spreading the developing solution over the organic electroluminescent display panel, a cleaning unit having at least a bath connected to the end of the developing unit for spraying a recycled cleaning liquid or cleaning liquid over the organic electroluminescent display panel, a drying unit having at least an airflow driers, and a transporting unit for transporting the electroluminescent display panel; wherein the organic electroluminescent display panel is transported at a constant speed by the transporting unit of the developing apparatus.