Abstract: Just after resist solution is coated on a substrate, it is dried substantially in a non-heating state. In reality, inertia gas or the like is blown from a shower head to the substrate. Thus, the resist solution coated on the substrate is dried. Consequently, transfer marks that cause the film thickness of resist film to be unequal and the line width of a circuit pattern to fluctuate can be prevented.

Abstract: A lithography system includes a spinner, a first controller, a stepper and a second controller. The spinner coats a photoresist film on a semiconductor substrate. The first controller sets a first optimal process parameter according to external information regarding the semiconductor wafer and controls the spinner according to the first optimal process parameter, when the semiconductor wafer is loaded into the spinner. The stepper exposes the semiconductor wafer, which is coated with the photoresist film, to light of a predetermined wavelength. The second controller sets a second optimal process parameter according to the external information regarding the semiconductor wafer and controls the stepper according to the second optimal process parameter, when the semiconductor wafer coated with the photoresist film is loaded into the stepper.

Abstract: Thermal processing unit sections each with ten tiers and coating processing unit sections each with five tiers are disposed around a first main wafer transfer section and a second main wafer transfer section, and in the thermal processing unit section, the influence of the time required for substrate temperature regulation processing on a drop in throughput can be reduced greatly by transferring the wafer W while the temperature of the wafer W is being regulated by a temperature regulation and transfer device.

Abstract: The present invention is a substrate processing apparatus for performing processing of a substrate including: a heat treatment unit provided in a casing of the processing apparatus and having a heating section in which a heat treatment of the substrate is performed; a duct provided on a side part on the heating section side of the casing; and a cooling flow passage provided in the duct for allowing a cooling fluid to flow therethrough. Heat generated from the heating section is prevented from conducting by an air current flowing in the duct, and further the heat is absorbed by the cooling fluid. Therefore, it is possible to prevent the heat from conducting to the outside of the casing.

Abstract: An apparatus and method are provided for developing photoresist patterns on electronic component substrates such as semiconductor wafers. The method and apparatus use a specially defined developer composition in sequence with a specially defined rinse composition to develop an exposed photoresist pattern and then to rinse the developed pattern. Both the developer composition and rinse composition contain an anionic surfactant and, when the solutions are used in sequence, have been found to provide a resist pattern which avoids pattern collapse even when small features such as line widths less than 150 nm with aspect ratios of greater than about 3 are formed. It is preferred to use a puddle developing and puddle rinsing process to develop and rinse the exposed wafer. Preferred anionic surfactants are ammonium perfluoroalkyl sulfonate and ammonium perfluoroalkyl carboxylate.

Abstract: A coating unit for coating a substrate with a treatment solution and a peripheral aligner, which has a mounting table rotatable and movable in at least one direction and irradiates the peripheral portion of the substrate on the mounting table with light from an irradiating portion to expose a coating film on the substrate, are provided in a substrate processing system. The peripheral aligner has film thickness measuring means provided with a sensor member for measuring a film thickness of the coating film. It is not necessary to separately provide a unit for measuring the film thickness outside of the system, thus preventing the substrate from being contaminated or dropped to be damaged when the film thickness is measured.

Abstract: The invention concerns an apparatus for developing films, particularly movie films, comprising a plurality of substantially vertical frames (1), for supporting and winding the film (3), placed within the different treatment rooms, each one of said frames (1) providing a plurality of transmission turns for the film, each one of said turns substantially comprising an upper pulley (2) and a lower pulley (4), and tensioning means of the film acting on the lower pulley (4), said apparatus being characterised in that said tensioning means of the film (3) in the single turns are comprised of piston means (11), provided under the lower pulley (4) of said turn, a single feeding system being provided for the piston means (11) of each frame (1).

Abstract: When a developing process is performed, a mixture of developing solution and pure water is supplied while the ratio of developing solution and pure water is gradually increased from pure water to developing solution. Thus, a developing solution component and a resist component gradually react. Even if a resist component dissolves in the mixture of pure water and developing solution, the equality of the concentration of the developing solution can be maintained. Thus, the developing process can be suppressed from being unequally performed. When a rinsing process is performed, a mixture of developing solution and pure water is supplied while the ratio of developing solution against pure water is gradually decreased from developing solution to pure water. Consequently, the substitution from developing solution to pure water can be gradually performed. As a result, particles due to the solidification of unsolved resist can be prevented.

Abstract: The invention relates to a system and a method for manufacturing semiconductor devices on a wafer with the steps of: coating (201) a photoresist onto said wafer, heating (202) said wafer to a prebake temperature for outgassing the solvent of the photoresist, exposing (203) said wafer to deep UV light for chemically modifying said photoresist in predetermined areas, heating (204) said wafer to a post exposure bake temperature for activating a chemical reaction, developing (205) said photoresist, stabilizing (206) said photoresist, meteorology inspection (207), etching, wet processing or implanting ion, wherein said stabilizing (206) of said photoresist occurs before the beginning of the etch process and comprises a controlled chemical contamination of said photoresist surface by ammonia/amine chemicals.

Abstract: There is disclosed an exposure control method in a lithography system having a resist coating and developing apparatus, a wafer transferring mechanism and an exposure control apparatus. The exposure control method in the lithography system includes the steps of transmitting data of temperature for heat-treating a resist film in the resist coating and developing apparatus to the exposure control apparatus; determining and controlling exposure time based on the temperature data; and exposing the resist film on a wafer which is moved or transferred by the wafer transferring mechanism during the determined exposure time.

Abstract: A film assemblage of the self-developing type comprising a pair of upper and lower carrier sheets in juxtaposed relationship to one another. A pair of openings is provided in each of the carrier sheets. A photosensitive sheet and a positive receiving sheet are joined to outer surfaces of the upper and lower carrier sheets; respectively, so as to cover the respective openings. The pair of upper and lower carrier sheets is fixedly joined together in overlapping relationship, whereby the photosensitive and receiving sheets are in superimposed and spaced apart relationship thereby torming, in combination, an image area of the film.

Abstract: It is one objective of the invention to provide a thermal development apparatus and a cooling method that can suppress the deterioration of image quality due to development time variances.

Abstract: Thermal processing unit sections each with ten tiers and coating processing unit sections each with five tiers are disposed around a first main wafer transfer section and a second main wafer transfer section, and in the thermal processing unit section, the influence of the time required for substrate temperature regulation processing on a drop in throughput can be reduced greatly by transferring the wafer W while the temperature of the wafer W is being regulated by a temperature regulation and transfer device.

Abstract: A first processing unit group for performing solution processing and a second processing unit group including heat and cooling processing units each having a heat processing unit and a cooling processing unit are arranged adjacent to each other such that the cooling processing unit is located on the first processing unit group side. This makes it possible to conduct temperature control precisely in a solution processing unit for performing solution processing for a substrate at about room temperature.

Abstract: A developing method comprising, a step of holding a substrate in substantially a horizontal position, the substrate coated with a photoresist film which has a pattern-exposed region where a predetermined circuit pattern is formed by light exposure, and a step of developing the photoresist film by starting to apply, at a time, a developing solution to the entire pattern-exposed region of the photoresist film.

Abstract: A solution having a photosensitive radical is applied onto a resist film, a developing solution is applied thereonto, and the entire surface of the solution having the photosensitive radical is exposed all at once. Developing of the resist film progresses all at once after a coating film of the solution having the photosensitive radical dissolves in the developing solution, and hence time difference in the start time of developing does not occur in the surface of a substrate, thereby enabling uniform developing and an improvement in line width uniformity (CD value uniformity) in the surface of the substrate.

Abstract: A semiconductor device fabrication system for carrying out a UV-bake on a photoresist pattern in the semiconductor device pattern formation, includes a photoresist coating unit coating a wafer with a specific photoresist; a developing unit forming a photoresist pattern on the wafer coated with the photoresist; and a cross-linking and flow baking unit for cross-linking the photoresist pattern and subsequently flow baking the cross-linked photoresist pattern, wherein the cross-linking and flow baking unit thermally stabilizes the photoresist pattern prior to flow baking.

Abstract: A system comprises a first maintenance interval storage for storing a first maintenance interval of each component which is not related to an actual utilization of an apparatus, a second maintenance interval storage storing a second maintenance interval of each component which is related to the actual utilization of the apparatus, a maintenance demander for demanding maintenance of some component based on the passing of the first maintenance interval of this component; and a maintenance interval prolonger for judging the second maintenance interval has passed or not based on the passing of the first maintenance interval, and when the second maintenance interval has not yet passed, suspending the demand for maintenance by the maintenance demander and prolonging the first maintenance interval. Consequently, it becomes possible to manage a maintenance timing of each component and give notice thereof on the side of the apparatus composed of a plurality of components.

Abstract: In a developing processing to apply the developing solution onto the substrate after the light exposure, a developing solution supply nozzle scans a substrate more than once while discharging the developing solution on the substrate in a band shape to coat the substrate with the developing solution. Thus, it is possible to perform a developing processing with a small variation and high uniformity of the line width.

Abstract: The present invention is a method for developing a substrate by supplying a developing solution from a developing solution supply nozzle onto a surface of the substrate mounted on a predetermined position, and comprises the steps of moving the developing solution supply nozzle from a standby position of the developing solution supply nozzle outside one end of the substrate to at least the other end of the substrate without supplying the developing solution, and thereafter, moving the developing solution supply nozzle from the other end to at least the one end while supplying the developing solution. Therefore, the developing solution supply nozzle which is used once and has a possibility of a drip of the developing solution does not pass above the substrate, so that the developing solution never drips from the developing solution supply nozzle onto the substrate before and after supplying the developing solution for some reason or other.

Abstract: A developing process for obtaining a resist pattern on a semiconductor wafer includes puddling a developer on a wafer and holding a wafer inclined at a predetermined tilt angle in the puddled condition and repeating alternately stoppage and slow rotation plural times. This can make the central pattern width narrower selectively simply by apparatus adjustment, in case where, otherwise the pattern width of a wafer's central portion becomes wide, thereby achieving an increased pattern uniformity of the wafer and serve as improving the performances.

Abstract: A first processing unit group for performing processing for a substrate at a temperature close to room temperature and a second processing unit group for performing heat processing for the substrate are disposed in divided different areas. Between the first processing unit group and the second processing unit group, the substrate is transferred only by means of a main transport apparatus and not directly. Thereby, temperature control can be precisely performed in the first processing unit group for performing processing for the substrate at a temperature close to room temperature.

Abstract: A device and method for delivering various substrates into a high-precision measuring instrument. The device comprises a magazine in which are configured several compartments in which substrate holders for different substrates can be deposited. Also provided is a loading station in which the substrate holders can be loaded with the substrate that matches the substrate holder. An automatic transfer device removes substrate holders from the magazine and introduces them into the loading station, or removes the substrate holders together with the introduced substrate from the loading station. The automatic transport device is configured as a robot arm at whose front end sits a fork.

Abstract: A resist solution discharge nozzle for discharging a resist solution to a wafer is moved at a constant speed along a radial direction of the wafer while the wafer is being rotated. During this movement, the amount of the resist solution to be discharged from the resist solution discharge nozzle is gradually decreased. The resist solution discharged to the wafer is applied to the front surface of the wafer drawing a spiral track, and coating amounts of the resist solution per unit area with respect to a central portion and a peripheral portion of the wafer can be made equal. Accordingly, waste of a processing solution supplied onto a substrate can be eliminated, and a uniform processing solution film can be formed on the substrate.

Abstract: An apparatus for processing semiconductor wafers includes a single imaging stepper for exposing wafers processed on a first track and a second track. A method for processing semiconductor wafers includes selecting one of a first coater and a second coater for coating a first wafer with a photoresist. The coated wafer is exposed in a single stepper to form an exposed wafer. An operator selects one of a first developer and second developer to develop the exposed wafer.

Abstract: Discharge ports of a supply nozzle are structured to be able to discharge a processing solution in a horizontal direction, and a guide plate for reducing the discharge pressure of the processing solution and guiding the processing solution to an under substrate is provided at a position facing the discharge ports. Thus, the appearance of micro bubbles at the time of the supply of the processing solution to the surface of the substrate can be inhibited, thereby reducing poor developing.

Abstract: A coating and developing process system is described. The system includes a chuck for mounting a substrate, at least one process solution spray nozzle for sending out coating solution and developing solution onto the substrate mounted by the chuck, a cleaning solution spray nozzle for sending out cleaning solution onto the mounted substrate, an actuator for selecting one of the process solution spray nozzle and the cleaning solution spray nozzle and then moving the selected one to a top of the substrate, and a controller for controlling the actuator. One actuator can drive the different spray nozzles, thereby saving a space and production cost of the system.

Abstract: A laser unit is arranged in an area of a floor surface, the width of which area is defined by maintenance areas, on both sides of an exposure-apparatus main body, inclusive. Furthermore, the exposure-apparatus main body and the laser unit are arranged on the floor surface such that maintenance areas of the both overlap each other at least partially. Moreover, a C/D is connected in-line with the front surface of the exposure-apparatus main body, and in the side of the exposure-apparatus main body, which side is in front of the optical axis of the projection optical system and which is connected with the C/D, a housing is provided which has a delivery port into and from which a mask container is loaded and unloaded by a ceiling-transport system that moves along a rail.

Abstract: An apparatus for developing a pixel-defining layer of an organic light emitting diode (OLED) display panel. The apparatus has a developing unit, a cleaning unit, a drying unit, a conveying unit and a control unit. The conveying unit transports the display panel to each of the connected units. The control unit determines a conveying order and a conveying time of the conveying unit so as to precisely control a processing time of the display panel in each of the units connected with the conveying unit. The conveying unit continuously transports the display panel to the developing unit, the cleaning unit and the drying unit in sequence to complete the developing process. Thereby, the apparatus can precisely control the predetermined developing time, the quality of pixel-defining layers and effectively reduce the period of the developing process and the labor cost.

Abstract: First, second, and third processing stations are connected to a cassette station into/out of which a wafer cassette is carried. Each of the processing stations is divided into a processing block including a processing unit for performing resist coating processing or developing processing and a second cooling section, and a transfer block including a wafer transfer unit, and heating section, and a first cooling section. The processing block has very precisely regulated atmosphere whose temperature is controlled. The wafer is very precisely controlled in temperature in the second cooling section and transferred to the processing unit in a very precisely regulated atmosphere so that a change in temperature during transfer is prevented and coating processing of a coating solution is performed while the temperature of the wafer is maintained very precisely.

Abstract: The present invention is a method of supplying a developing solution to an entire face of a substrate to perform a developing treatment, including the steps of: moving a developing solution supply nozzle at a predetermined speed at least from one end to another end of the substrate while the developing solution is being supplied; measuring an amplitude of a wave on a solution face of the developing solution supplied on the substrate after the supply of the developing solution; and changing the predetermined speed of the developing solution supply nozzle based on a measured value. Accordingly, it is unnecessary to measure a line width or the like which is finally formed on the substrate before correction as in the conventional art, and thus the correction can be made earlier as compared with the conventional case, resulting in a reduced number of defective items and improved yield.

Abstract: A resist peeling system includes a peeling solution tank for storing a resist peeling solution; an electric conductivity monitor for monitoring the electric conductivity of a resist peeling solution; and a additive components tank for estimating the components ratio in the resist peeling solution on the basis of the electric conductivity thereof and adding, when a component of the resist peeling solution is estimated to be insufficient on the basis of the estimated result, the component lacking for the resist peeling solution to the resist peeling solution by a suitable amount.

Abstract: In an interface section, a transfer device is disposed to face a second cooling processing unit group in a processing station, and a thermal processing unit group in which thermal processing units are multi-tiered is disposed on one side and a peripheral aligner, a buffer cassette, and a wafer holding section which are vertically tiered from the top in order are disposed on the other side so that the transfer device is put between them. A secondary transfer body is disposed between the wafer holding section and an aligner, and a wafer is carried into/out of an in-stage and an out-stage in the aligner by means of this secondary transfer body. Thus, a period of time until the wafer W which has undergone exposure undergoes heat processing can be precisely managed, thereby enabling the formation of uniform line width.

Abstract: In a state where a wafer is held by a wafer holding section and a temperature controlled liquid is discharged to a rim area on a rear face of the wafer from flow channels, a developing solution is heaped on a front face of the wafer. Thereafter, the wafer is rotated for a predetermined period of time in a state where the temperature controlled liquid is discharged to the rim area on the rear face of the wafer from the flow channels, whereby developing is performed. The wafer is heated by the wafer holding section with a large heat capacity in an area close to a center of the wafer, and a liquid film of the temperature controlled liquid is formed in the rim area of the wafer, whereby the wafer is heated. At this time, the wafer is rotated, so that the developing solution is stirred.

Abstract: Outside air taken in from the outside is cooled to a predetermined temperature by a cooler, and the air cooled by the cooler flows through a low temperature side flow path in a heat exchanger, whereas outside air flows through a high temperature side flow path in the heat exchanger, which allows heat to be exchanged between the cooled air and the outside air. The air, flowing through the low temperature side flow path in the heat exchanger and warmed up by the outside air flowing through the high temperature side flow path, is warmed and humidified by a warmer and a humidifier, and the air with predetermined temperature and humidity is supplied to a coating processing unit. Moreover, the outside air, flowing through the high temperature side flow path in the heat exchanger and cooled by the air flowing through the low temperature side flow path, is warmed by a warmer, and the air with a predetermined temperature is supplied to a developing processing unit.

Abstract: In centering a transfer device so that tweezers of the transfer device transfer a substrate to a predetermined delivery position on a spin chuck when the substrate is delivered to a coating unit by means of the transfer device, the substrate is transferred onto the spin chuck in the coating unit by means of the tweezers, a positional deviation amount of the substrate with respect to the delivery position on the chuck is detected by a detecting device, a positional deviation amount of the tweezers is computed based on this detection value, and a position at which the tweezers deliver the substrate is corrected based on the positional deviation amount of the tweezers. Thus, centering of the substrate transfer device can be performed automatically in a short time.

Abstract: Embodiments of the invention comprise a new device and technique to realize an improved temperature control for a chemical photoresist developer utilizing a preexisting integrated single reservoir. This improvement is achieved by providing for a modified temperature control unit and procedure. The temperature control unit preferably comprises a plurality of heat exchanger conduits that are each supplied by an inlet manifold, and then exhausted via an outlet manifold. The temperature control unit preferably extends fully within the modified nozzle unit. By utilizing the improved temperature control unit, a first and second volumetric allocation of developer may be issued so that both may be dispensed within a relatively short period of time upon a photoresist layer surface in a temperature controlled state.

Abstract: A method for developing a material having a photosensitive resin composition or a photosensitive lithographic printing original plate is disclosed, comprising developing a material having a plurality of photosensitive resin composition sheets in sequence with a developer or developing a photosensitive lithographic printing plate precursor with an alkaline developer, wherein the activity of developer is maintained by detecting the exhaustion of developer occurring with the development and passing a current between two electrodes through a developer according to the degree of exhaustion detected.

Abstract: A current member is disposed above a wafer holding section for holding a wafer and a top plate and a bottom plate of the current member are positioned so that respective air holes are overlapped each other in a vertical direction, and a developing solution is heaped on a front face of the wafer. Thereafter, the developing is performed with the bottom plate of the current member slid in a lateral direction so that the air holes are not overlapped each other in the vertical direction. In this configuration, air streams to the wafer are obstructed during the developing because the air holes in the current member are obstructed in the vertical direction, whereby occurrence of temperature distribution of the developing solution within the plane of the wafer caused by flows of air currents to the wafer is prevented and uniform developing processing can be performed.

Abstract: A substrate processing system for processing a substrate in accordance with a photolithographic process, comprising a cassette section, a process section having a plurality of process units each processing a substrate, main transfer arm mechanism arranged in a transfer space surrounded by the process section and the cassette section, for transporting substrates one by one not only between a cassette of the cassette section and each of the plurality of process units but also between the plurality of process units, and a loop transfer path movably supporting the main transfer arm means in a lower portion of the transfer space and guiding the main transfer arm means so as to face each of the process units and the cassette section.

Abstract: Just after resist solution is coated on a substrate, it is dried substantially in a non-heating state. In reality, inertia gas or the like is blown from a shower head to the substrate. Thus, the resist solution coated on the substrate is dried. Consequently, transfer marks that cause the film thickness of resist film to be unequal and the line width of a circuit pattern to fluctuate can be prevented.

Abstract: The apparatus for treating surface of boards includes treating means for treating surface of boards by supplying sequentially a treating solution and a rinse liquid on boards placed on a treating table; solution collecting means for collecting waste treating solution separately from waste rinse liquid; waste solution storing, concentrating detecting and solution supplementing means for storing the waste treating solution, detecting the concentration of at least one ingredient in the waste treating solution by an electric conductivity meter and/or an absorption photometer, supplementing treating solution for adjusting containing necessary ingredients depending on the detected value, and adjusting the treating solution; and treating solution feed means for feeding the adjusted treating solution into the treating means. By thus constructing, the treating solution can be recycled, and if recycling is repeated, the performance of the treating solution itself can be maintained.

Abstract: An exposure apparatus includes a chamber surrounding a predetermined space, a first gas supply unit for supplying a first gas into the chamber, a second gas supply unit for supplying a second gas, different from the first gas into the chamber, and a switching mechanism for supplying one of the first and second gases by switching between the first and second gas supply units.

Abstract: A processing station, an interface station, and an aligner are connected in this order to a cassette station in which a wafer cassette is carried in and out. In the processing station, shelf units on the cassette station side, processing sections including an antireflection film forming unit, a coating unit, and a developing unit on the interface station side, and wafer transfer means between the shelf units and the processing sections are all arranged parallel to the direction of arrangement of cassettes. In such a layout, processing sections can be added without changing the length from the cassette station of the processing station.

Abstract: Just after resist solution is coated on a substrate, it is dried substantially in a non-heating state. In reality, inertia gas or the like is blown from a shower head to the substrate. Thus, the resist solution coated on the substrate is dried. Consequently, transfer marks that cause the film thickness of resist film to be unequal and the line width of a circuit pattern to fluctuate can be prevented.

Abstract: A substrate processing apparatus comprising a substrate carrying section which carries in and out the substrate, a processing section including a plurality of processing units which are vertically stacked and subject the substrate to various kinds of processing, a main transfer machine which freely moves in a vertical direction in the processing section, for transferring the substrate from one of the processing units to another of the processing units, and a secondary transfer machine which freely moves in a vertical direction in the substrate carrying section, for delivering the substrate between the substrate carrying section and the processing section and transferring the substrate from one processing unit to another processing unit in the processing section when not delivering the substrate.

Abstract: A first cooling unit group and a second cooling unit group are disposed in the vicinity of a resist coating unit group. Each of the first cooling unit group and the second cooling unit group is composed of various cooling units. Each of the cooling units cools a wafer. A first heating unit group and a second heating unit group are disposed in the vicinity of a developing unit group. Each of the first heating unit group and the second heating unit group is composed of various heating units. Each of the heating units heats a wafer. A first conveying unit is disposed between the cooling unit groups. A second conveying unit is disposed between the heating unit groups. A transfer table is disposed between the conveying units. The transfer table temporarily holds a wafer. The first conveying unit conveys a wafer among the resist coating unit group, the transfer table, and the cooling unit groups.

Abstract: A processing station for performing coating of a resist and heaping up a developing solution is connected to a cassette station into/out of which a wafer cassette is carried. In this processing station, when seen from the cassette station, a first processing unit in which antireflection film forming units and coating units are arranged with two tiers is disposed on the left side, and a second processing unit in which developing units and a peripheral edge aligner are arranged with two tiers is disposed on the right side so as to face the first processing unit. Two wafer transfer means are arranged in an area facing onto the row of each of the processing units. In such a layout, working spaces can be secured in an area between the first and second processing units.

Abstract: Temperature control of heaters 8a and 8b for heating a printing original plate 2 is performed with an atmosphere temperature sensor 11, etc., and stably generated heat is shielded by controlling the rotation angles of reflecting plates 9a and 9b. The leading end of the printing original plate 2 is detected by a position detection sensor 26 and the transport speed of the printing original plate 2 is controlled. As the trailing end of the printing original plate 2 is detected, the rotation angles of the reflecting plates 9a and 9b are controlled and the heating amount is controlled in response to the parts of the printing original plate 2. Accordingly, it is possibly to heat the whole printing original plate while preventing uneven heating, when the printing original plate is heated and transported.

Abstract: A wafer processing apparatus includes a common path, extending in a Y-axis direction, in which one wafer or a plurality of wafers are conveyed, a plurality of process units stacked on both sides of the common path to constitute multi-stage structures, a main handler moved in the common path in the Y-axis direction and rotated about a Z axis at an angle &thgr; to load/unload the wafer into/from the process units, an arm section arranged to move in the main handler in the Z-axis direction, a plurality of holding arms arranged in the arm section to constitute a multi-stage structure so as to respectively hold the wafers, each holding arm being advanced and retreated on an X-Y plane from the arm section, an optical sensor, arranged in the arm section, for detecting a holding state of the wafer in each of the plurality of holding arms, and a controller for controlling an operation of the main handler, an operation of the arm section, and operations of the plurality of holding arms on the basis of a detection resul