Abstract: On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. Exhaust pipes for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes.

Abstract: A system for regulating the time and temperature of a development process is provided. The system includes one or more light sources, each light source directing light to one or more gratings being developed on a wafer. Light reflected from the gratings is collected by a measuring system, which processes the collected light. Light passing through the gratings may similarly be collected by the measuring system, which processes the collected light. The collected light is indicative of the progress of development of the respective portions of the wafer. The measuring system provides progress of development related data to a processor that determines the progress of development of the respective portions of the wafer. The system also includes a plurality of heating devices, each heating device corresponds to a respective portion of the developer and provides for the heating thereof. The processor selectively controls the heating devices so as to regulate temperature of the respective portions of the wafer.

Abstract: A substrate treating apparatus includes a heat-treating unit having a cooling unit and a local transport mechanism. The local transport mechanism, in time of standby, is placed in a standby position inside the cooling unit. The local transport mechanism in the standby position influences, and is influenced by, the environment outside the heat-treating unit less than where the local transport mechanism is kept on standby outside the heat-treating unit. Variations in substrate treating precision due to such adverse influences are reduced to perform substrate treatment with high precision.

Abstract: A substrate (W) is held in an approximately horizontal position by a substrate holder (10) and is rotated by a spinning motor (13). A rinsing liquid supply nozzle (140) is rotatably supported at its one end by a second nozzle movement mechanism (150) and is rotated to pass over the substrate (W). The rinsing liquid supply nozzle (140) is rotated to pass over the substrate (W) and at the same time to discharge a rinsing liquid from its discharge unit. At this time, the rinsing liquid supply nozzle (140) and the substrate (W) are rotated so that a virtual scanning direction (La) of the substrate (W) is substantially perpendicular to a direction of extension of the rinsing liquid supply nozzle (140). That is, since the rinsing liquid supply nozzle (140) is shifted in the virtual scanning direction (La), a non-supplying area of the substrate (W) where a rinsing liquid is not supplied can successively be made up and eliminated as the scanning by the nozzle (140) proceeds.

Abstract: The developer producing equipment of the present invention is connected via piping to working equipment in which electronic circuits, on which fine working is performed, are formed, and produces an alkali type developer used in the abovementioned working equipment. This developer producing equipment comprises a preparation tank to which a developer stock solution and pure water are supplied, and in which these are agitated, first liquid amount measuring means for measuring the amount of the alkali type developer inside the preparation tank, first alkali concentration measuring means for measuring the alkali concentration of the abovementioned alkali type developer, first liquid amount control means for adjusting the amount of the alkali type developer inside the preparation tank on the basis of the measured value obtained by the abovementioned first liquid amount measuring means the abovementioned first alkali concentration measuring means, and liquid supply control means.

Abstract: In a developing method for performing developing treatment of a substrate by supplying a developing solution onto a resist film formed on a surface of the substrate, the present invention controls a zeta potential of the surface of the substrate at a predetermined potential in the same polarity as that of a zeta potential of insoluble substances floating in the developing solution, thereby preventing or reducing the adhesion of the insoluble substances to the resist film and the substrate. This remedies the occurrence of development defects. The adhesion of the insoluble substances to the resist film and the substrate can also be prevented or inhibited by supplying an acid liquid to a liquid on the substrate, or controlling a pH value of the liquid on the substrate to control an absolute value of the zeta potential of the insoluble substances.

Abstract: A positive photoresist bead is removed from an edge surface of a substrate by exposing the photoresist bead with light from an exposing source along a plurality of non-parallel paths approximately normal to the surface of the photoresist bead. The light may be simultaneously directed by a light guide along the non-parallel paths, or a mount may support the light guide adjacent the bead to move the light guide to various positions to direct the light along the non-parallel paths. Alternatively, plural light sources direct light to the bead along non-parallel paths. In any case, the exposed photoresist bead is then removed with a solvent.

Abstract: An apparatus for processing substrates according to a predetermined photolithography process is presented. The apparatus includes a loading station in which the substrates are loaded, a coating station in which the substrates are coated with a photoresist material, an exposing station in which the photoresist coating is exposed to light through a mask having a predetermined pattern to produce a latent image of the mask on the photoresist coating, a developing station in which the latent image is developed, an unloading station in which the substrates are unloaded and a monitoring station for monitoring the substrates with respect to predetermined parameters of said photolithography process before reaching the unloading station. The monitoring station comprises an optical monitoring system comprising a spectrophotometric channel, and is accommodated in a sealed enclosure, such that incident light passes through the optical system towards the substrate through a transparent window.

Abstract: A resist coating/developing system is equipped with a cassette station, a process station and an inspection station. The inspection station comprise a defect inspection unit, a dummy inspection unit, a bypass inspection unit and a main wafer transfer device. When sampling inspections on wafer W that have completed processing in the process station, if a failure has occurred in the defect inspection unit, the inspection wafer is placed in the bypass inspection unit and excluding the inspection wafer, the non-inspection wafers are placed in the dummy inspection unit in the order that they were transferred to the inspection station and the wafer W is transferred from the inspection station to the cassette station in the order transferred from the process station to the inspection station.

Abstract: A method and apparatus for producing identification (ID) cards using a photosensitive imaging system employing microcapsules is described. In accordance with one aspect of the invention, ID cards are produced by translating an image containing identifying indicia into a latent image on an appropriate photosensitive donor sheet, pressure developing the latent image, forming a full color print of the image on a developer sheet, laminating an ID card substrate in registration with the image to the developer sheet and die cutting the laminated article to produce an ID card. Self-contained imaging systems can also be used to produce identification cards. The image preferably includes unique information useful in identifying the card holder such as a photograph, fingerprint, signature, description, name, etc. The identifying indicia may be combined with non-variable information including background printing, card issuer data, logos, security features, etc.

Abstract: The present invention is a system for performing coating and developing treatment for a substrate, which comprises a treatment section having a coating treatment unit for forming a coating film on the substrate, a developing treatment unit for developing the substrate, a thermal treatment unit for performing thermal treatment for the substrate, and a first carrier unit for carrying the substrate into/out of these coating treatment unit, developing treatment unit, and thermal treatment unit. The system of the present invention further comprises an interface section having a second carrier unit for carrying the substrate through a route at least between the treatment section and an exposure processing unit provided outside the system for performing exposure processing for the substrate.

Abstract: An apparatus is disclosed for coating a semiconductor wafer with polyimide so that excess polyimide is removed from the wafer edge, back side and coating process area and is conveniently drained. A developer, such as dilute TMAH, that mixes with the excess polyimide is injected into a chamber. The soluble mixture of TMAH and excess polymide may then be drained into a bulk drain, obviating the accumulation of excess polymide in the coater cup. The method is implemented through an assembly that includes a coater cup, spin chuck disposed within the coater cup, and a pair of nozzles intruding into the coater cup at a lower portion of the cup. A fist nozzle operates to inject developing fluid onto the back side of the wafer in the cup, and a second nozzle, positioned nearer the center of the cup and the spin chuck, operates to inject rinsing fluid.

Abstract: A resist coating unit includes a coater cup surrounding a wafer W held by a spin chuck and an air supply mechanism for blowing an air into the coater cup. The air supply mechanism includes a hollow frame having a first open portion formed in the vertical wall, an air blowing device for blowing an air into the hollow frame, and a filter chamber unit into which the air within the frame is introduced. The filter chamber unit includes a first air introducing chamber having a heater arranged therein, a second air introducing chamber, an air stream control mechanism, and a filter unit. The air flowing within the frame flows into the first air introducing chamber through the first open portion so as to be uniformly heated by the heater and, then, is introduced into the second air introducing chamber. Then, the air uniformly heated by the heater is blown into the coater cup through the air stream control mechanism and the filter unit.

Abstract: An apparatus and method for developing a selectively exposed resist pattern, on an integrated circuit wafer, which avoids damage to the resist pattern and allows greater freedom in the choice of resists. Developer is placed on a selectively exposed layer of resist for a first time. The layer of resist and developer are then immersed in a cleaning liquid time for a second time to stop the developing action and remove the developer. As an option, ultrasonic power can be delivered to the wafer or the cleaning liquid while the layer of resist is immersed in the cleaning liquid. The cleaning liquid is then removed from the layer of resist, now a resist pattern, and the wafer and resist pattern is placed in a vacuum for drying. As another option, heat can be applied to the wafer and resist pattern while they are in the vacuum. The wafer and resist pattern are then removed from the vacuum for further processing.

Abstract: A photoresist developing nozzle, a photoresist developing apparatus and a photoresist developing method capable of effecting uniform development are provided even in the case of a large diameter wafer. A photoresist nozzle has a plurality of small chambers, developer supply flow passages for supplying developer to respective small chambers, and developer discharge sections for discharging developer supplied from the developer supply flow passages onto the wafer. The photoresist developing apparatus has the photoresist developing nozzle and the photoresist developing method uses the photoresist developing nozzle.

Abstract: A system for monitoring a latent image exposed in a photo resist during semiconductor manufacture is provided. The system includes one or more light sources, each light source directing light to the latent image and/or one or more gratings exposed on one or more portions of a wafer. Light reflected from the latent image and/or the gratings is collected by a signature system, which processes the collected light. Light passing through the latent image and/or gratings may similarly be collected by the signature system, which processes the collected light. The collected light is analyzed and can be employed to generate feedback information to control the exposure. The collect light is further analyzed and can be employed to generate feed forward information that can be employed to control post exposure processes including development and baking processes.

Abstract: A substrate processing apparatus includes a coating section, a developing section, a heat-treating section and a transport mechanism. The coating section has first processing units each for performing a coverage process to supply a photoresist solution to a substrate and cover a surface of the substrate with the photoresist solution, a second processing unit for spinning the substrate, after the coverage process, at high speed to make the photoresist solution into a film, dry the photoresist film, and clean the substrate. All substrates are processed with the same coating conditions to suppress differences in quality among the substrates. The first and second processing units perform the respective processes concurrently to improve the throughput of substrate processing.

Abstract: In this invention, resist patterns formed by development are dried using a supercritical fluid such that no moisture enters the patterns.

Abstract: A solution-receiving plate having solution-passing holes for passing a developer solution therethrough toward the back side of the plate is provided. Respective surfaces of the solution-receiving plate and a substrate are at the same height, and the solution-receiving plate is placed on the front-end side of the substrate and separated slightly from the front end of the substrate. A supply nozzle is moved to apply a developer solution. Accordingly, when the developer solution extended continuously between the perimeter of the substrate and the supply nozzle is severed, the severed developer solution is prevented from returning to the developer solution already spread over the substrate and thus flow and waves are prevented from occurring in the developer solution spread on the surface of the substrate. A resist pattern with a highly uniform line width is thus produced.

Abstract: A removal liquid is supplied to a substrate on which a thin film formed is patterned by dry etching using a resist film as a mask, and cleaning is made with de-ionized water, thereby removing a reaction product generated on the surface of the substrate. After that, the processed substrate is heated, thereby completely drying the substrate from which the reaction product has been eliminated.

Abstract: An apparatus for processing a substrate comprising a substrate holding mechanism for holding the substrate substantially horizontally, a chemical solution discharge/suction mechanism having a chemical solution discharge/suction portion which has a chemical solution outlet for discharging a chemical solution onto the substrate and chemical solution inlets for sucking up the chemical solution present on the substrate, and a chemical solution supply/suction system for supplying the chemical solution to the chemical solution discharge/suction mechanism simultaneously with sucking the chemical solution by the chemical solution supply/suction mechanism.

Abstract: A method and apparatus for conveying a thin, planar, flexible work piece through a work station with the work piece being held flat as it is conveyed. Specifically, a method and apparatus for developing an imaged coating on a lithographic printing plate involves the application of a thin film of developer solution to the imaged coating and allowing time for the dissolution to take place as the plate is conveyed through the developer across a flat horizontal platen. The spent developer solution is then removed and discarded to waste. Therefore, fresh developer solution of the proper composition is always being used to develop each plate. A film of water between the plate and the conveyor belt holds the plate in position and flat on the conveyor. The fresh developer solution is stored and delivered out of contact with the atmosphere to prevent atmospheric-caused degradation.

Abstract: The present invention is directed to optimization of the optical detection system for the use of optical emission spectroscopy in end-point detection. The optimization specifically addresses the needs of a radiant heated wafer system in a downstream process chamber environment. The present invention maximizes signal light from relevant reactions, maximizes signal-to noise and signal-to-background ratios, utilizes very small diagnostics access, collects light from the region of most intense light emission from endpoint processes, collects light from representative parts of an entire wafer with just one diagnostic access port to ensure complete end-point, and eliminates light signals from sources other than the wafer.

Abstract: A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.

Abstract: The present invention relates to a fender, which is used as cushioning material mainly at the time of a ship being moored, and a management system thereof. A transponder is mounted in a fender 1 that is an object to be managed, and an ID code is read by the transponder in the fender 1 being accessed by terminals 2A through 2D provided in areas where are areas to be managed and each have one or more terminals. Historical information showing an installed place and an installed period of the fender 1 and individual update information including the ID code is transferred to a control system 4 through communication networks 6A through 6D. The control system 4 not only stores manufacturing information and historical information of all the fenders 1 that are objects to be managed, but also updates the historical information on the basis of the individual update information received from the terminal 2.

Abstract: In a method for controlling a processing apparatus, an error value between an input value of the processing apparatus for processing a subject to be processed, and a measurement value obtained by measuring the subject being processed is obtained. A correction value is computed for correcting the input value of the processing apparatus in the direction of decreasing the error value, and the values are managed as processing data to be utilized in computing a next correction value. Previous processing data having a history identical to that of the subject loaded to the processing apparatus is searched, and a current bias correction value is predicted from a plurality of most recent correction values having the identical history. Also, a current random correction value is predicted by means of a neural network on the basis of a plurality of most recent random correction values. The predicted bias correction value is summed with the random correction value as a current correction value of the processing apparatus.

Abstract: In an FAB having a plurality of coating and developing processing apparatus, atmospheric pressure is measured by a barometer provided in the FAB, and a measured value is sent to each of the coating and developing processing apparatus via a host computer. In each coating and developing processing apparatus, based on the value, the rotation speed of a substrate in a resist solution coating unit is regulated only when the atmospheric pressure value exceeds a predetermined allowable value which is preset according to the type of chemical. As a result, without causing the complication of the apparatus, plant and equipment investment can be held to minimum, and the coating film thickness of a substrate can be maintained at a predetermined thickness.

Abstract: In a developing processing of a wafer having a resist film low in the dissolving rate in a developing solution formed thereon and subjected to an exposure treatment, a developing solution of a low concentration is supplied first onto a wafer and the wafer is left to stand for a prescribed time to permit a developing reaction to proceed, followed by further supplying a developing solution having a concentration higher than that of the developing solution supplied first onto the wafer, leaving the substrate to stand and subsequently rinsing the wafer, thereby improving the uniformity of the line width in the central portion and the peripheral portion of the wafer.

Abstract: A substrate processing apparatus configured to process a substrate by a photolithography process, comprising a plurality of heating sections for heating substrate, respectively, a plurality of first cooling sections, the number of which is equal to or smaller than the number of the heating sections, for cooling the substrate heated in the heating section to a first temperature, a second cooling section for further cooling the substrate cooled in the first cooling section to a second temperature lower than the first temperature, and a plurality of liquid process sections for supplying a process liquid to the substrate cooled in the second cooling section to form a liquid film of the process liquid on the substrate.

Abstract: One aspect of the present invention relates to a method and an apparatus for rinsing a substrate during a development process to mitigate pattern collapse. The apparatus includes a bath chamber; a substrate holder disposed in the bath chamber for holding the substrate having a resist pattern formed thereon; a first nozzle for dispensing a first rinsing solution having a first density and first surface tension into the bath chamber; a second nozzle for dispensing a second rinsing solution having a second density and second surface tension, which is less than the first rinsing solution, into the bath chamber; a drain disposed in a bottom portion of the bath chamber; and a controlling system operatively coupled to the first nozzle, the second nozzle and the drain designed to regulate and coordinate the operation of the first nozzle, the second nozzle and the drain.

Abstract: There is provided improvement of a light-heat conversion in a light-stimulated writing method.

Abstract: Thermal processing unit sections each with ten tiers and coating processing unit sections each with five tiers are disposed around a first main wafer transfer section and a second main wafer transfer section, and in the thermal processing unit section, the influence of the time required for substrate temperature regulation processing on a drop in throughput can be reduced greatly by transferring the wafer W while the temperature of the wafer W is being regulated by a temperature regulation and transfer device.

Abstract: A method of processing a print order in which the entire order is delivered simultaneously. An exposed sheet carrying all the latent images of the order is developed in a single processing space.

Abstract: A solvent of a resist solution is dropped from a solvent supply nozzle onto the surface of a semiconductor wafer held by a spin chuck. The semiconductor wafer is rotated by the spin chuck to spread the resist solution over the entire surface of the semiconductor wafer W. Simultaneously, the resist solution is dropped from a resist solution supply nozzle onto the semiconductor wafer and spread following the solvent. During the processing, the processing space is isolated from the outer atmosphere by closing a lid of a processing vessel and a sprayed solvent is supplied into the processing space. The processing space is thus filled with the mist of solvent. In the processing space supplied with the solvent, evaporation of the solvent from the resist solution is suppressed. A film of the resist solution is formed with a uniform film thickness to the edge of the semiconductor wafer W.

Abstract: A system for monitoring a latent image exposed in a photo resist during semiconductor manufacture is provided. The system includes one or more light sources, each light source directing light to the latent image and/or one or more gratings exposed on one or more portions of a wafer. Light reflected from the latent image and/or the gratings is collected by a signature system, which processes the collected light. Light passing through the latent image and/or gratings may similarly be collected by the signature system, which processes the collected light. The collected light is analyzed and can be employed to generate feedback information to control the exposure. The collect light is further analyzed and can be employed to generate feed forward information that can be employed to control post exposure processes including development and baking processes.

Abstract: The present invention is a method of supplying a developing solution to an entire face of a substrate to perform a developing treatment, including the steps of: moving a developing solution supply nozzle at a predetermined speed at least from one end to another end of the substrate while the developing solution is being supplied; measuring an amplitude of a wave on a solution face of the developing solution supplied on the substrate after the supply of the developing solution; and changing the predetermined speed of the developing solution supply nozzle based on a measured value. Accordingly, it is unnecessary to measure a line width or the like which is finally formed on the substrate before correction as in the conventional art, and thus the correction can be made earlier as compared with the conventional case, resulting in a reduced number of defective items and improved yield.

Abstract: A wafer processing equipment comprises a track (10) for transporting wafers, a wafer launch station (20) for launching wafers into a section of said track (10), a first wafer processing tool (30) for performing a first process to wafers in said section of said track (10), a buffer (40) for storing wafers processed by said first wafer processing tool (30), a second wafer processing tool (50) for performing a second process to wafers processed by said first wafer processing tool (30), and control means (70) for controlling said wafer launch station (20) such that every wafer launched by said launch station (20) is processed by said second processing tool (50) within a predetermined time window.

Abstract: When a resist film formed on a substrate is exposed in a predetermined pattern and thereafter an exposed pattern is developed, a substance capable of decreasing fluidity of the developing solution is added to the developing solution, the developing solution to which the substance is added is caused to become low-fluid under a predetermined condition, the developing solution is applied onto the exposed resist film on the substrate, and thereafter a predetermined trigger is given to the developing solution to cause the developing solution to become high-fluid so as to allow developing to progress. Thereby, line width can be made uniform and defects do not tend to occur during coating of the developing solution.

Abstract: A developing unit, a coating unit and a plurality of cooling plates are arranged in a process station which performs a resist coating and so on and a wafer is transferred among them by a substrate transfer device. The temperature of an area to where the wafer is transferred is detected by a temperature/humidity detector and the temperature of the wafer which is cooled by the cooling plates is adjusted accordingly based on a detected value so that the temperature of the wafer when transferred to the coating unit becomes a coating temperature of a processing solution. Thereby, the wafer is transferred to the coating unit while maintaining its temperature with high accuracy to be coated with a resist solution, so that a formation of an uneven processing due to the temperature change can be prevented and a uniform processing can be performed.

Abstract: A photographic processor having a circular processing drum is shown. The circular processing drum of the processor of the present invention includes a disk that is positioned inside the drum. In order to accommodate different types of film, the circular processing drum is adjustable to change the width and thereby, change a size of the film path within the circular processing drum.

Abstract: A coating unit for coating a substrate with a treatment solution and a peripheral aligner, which has a mounting table rotatable and movable in at least one direction and irradiates the peripheral portion of the substrate on the mounting table with light from an irradiating portion to expose a coating film on the substrate, are provided in a substrate processing system. The peripheral aligner has film thickness measuring means provided with a sensor member for measuring a film thickness of the coating film. It is not necessary to separately provide a unit for measuring the film thickness outside of the system, thus preventing the substrate from being contaminated or dropped to be damaged when the film thickness is measured.

Abstract: The present invention provides lithographic systems and lithographic processes in which conditions affecting critical dimensions are controlled based on a latent image signature. The latent image signature characterizes the latent pattern present in a resist coating after selective exposure of the resist to actinic radiation. The latent image signature is determined from the full latent pattern within a region of the resist. Conditions for subsequent processing steps (feed forward control) and/or prior processing steps (feed back control) to produce desired critical dimensions are determined from the latent image signature. In another aspect of the invention the latent pattern is logically divided into a plurality of regions. Within each region, a characteristic of the latent pattern is analyzed to determine conditions to apply to that region during previous and/or subsequent processing steps.

Abstract: The present invention is a developing method for performing developing treatment for a substrate, having the steps of moving a developing solution supply nozzle from one end of the substrate to the other end along a horizontal direction and a predetermined direction above the rotating substrate, and supplying a developing solution to the substrate from the aforementioned developing solution supply nozzle during the movement, and when the developing solution supply nozzle moves from one end of the substrate to the other end, a rotational speed of the substrate is changed. According to the present invention, the amount of the developing solution supplied to the center area of the substrate is decreased, and thereby evenness of the developing solution within the substrate surface can be improved.

Abstract: Thermal processing unit sections each with ten tiers and coating processing unit sections each with five tiers are disposed around a first main wafer transfer section and a second main wafer transfer section, and in the thermal processing unit section, the influence of the time required for substrate temperature regulation processing on a drop in throughput can be reduced greatly by transferring the wafer W while the temperature of the wafer W is being regulated by a temperature regulation and transfer device.

Abstract: The present invention has a processing zone having a coating unit for forming a coating film on a substrate, a developing unit for performing development of the substrate, a heat treatment unit for performing heat treatment of the substrate, and a first transfer device for transferring the substrate from/to the coating unit, the developing unit and the heat treatment unit, an interface section in which the substrate is transferred at least on a path between the processing zone and an exposure processing unit outside the system for performing exposure processing for the substrate, a casing for housing the processing zone and the interface section, a gas supply device for supplying an inert gas into the interface section, and an exhaust portion through which an atmosphere in the interface section is discharged, and the heat treatment unit, and a second transfer device for transferring the substrate on a path between the heat treatment unit and the exposure processing unit are disposed in the interface section.

Abstract: A substrate processing apparatus for performing processing having a plurality of processes, for example, resist coating and developing processing for a substrate, comprises a plurality of processing mechanisms each for performing predetermined processing for the substrate in correspondence with the plurality of processes and a transfer section for transferring the substrate. The transfer section includes a plurality of transfer mechanisms for carrying the substrate into or out of the plurality of processing mechanisms and a buffer mechanism provided at a position to which each of the plurality of transfer mechanisms is accessible and having a standby section for allowing the substrate to stand by thereon temporarily, and the plurality of processing mechanisms are provided around the transfer section.

Abstract: A substrate processing method for forming a resist film on a wafer with a base film being formed, and performing an exposure processing and a developing processing for the resist film to thereby form a desired resist pattern, has a base reflected light analyzing step of radiating a light of the same wavelength as an exposure light radiated during the exposure processing to the base film and analyzing a reflected light, before forming the resist film, and a processing condition control step of controlling at least one of a resist film forming condition and an exposure processing condition, based on the analysis of the reflected light. The method makes it possible to control a line width of a resist pattern with high precision.

Abstract: A semiconductor manufacturing apparatus for a photolithographic process having a coating process and a developing process is described, which includes a first port, a second port, a coating member, and a developing member. The first port and second port have a constant distance from each other, where a substrate comes in and goes out. The coating member, which couples the first port to the second port, carries the substrate between the first port and the second port and carries out the coating process. The developing member, which couples the first port to the second port and is stacked on the coating member, carries the substrate therebetween and carries out the developing process. The apparatus can stably maintain an operating ratio of equipment, and be installed in a relatively small area.

Abstract: The present invention provides a surface-treatment apparatus for forming a plurality of photoresist-isolating walls on an organic electroluminescent panel. The surface-treatment apparatus has a photoresist-coating module, a prebaking unit, an exposure unit, a post-exposure surface treatment module with an alkaline atmosphere, a development module and a hard baking unit. The photoresist-coating module coats a photoresist layer on the surface of the organic electroluminescent panel. The prebaking unit bakes the photoresist layer on the organic electroluminescent panel by a heating plate and initially drives solvents from the photoresist layer. The exposure unit performs an UV exposure process on the photoresist layer after the prebaking. The post-exposure surface treatment module with an alkaline atmosphere bakes the photoresist layer by a heating plate after the exposure process, wherein the alkaline atmosphere surfacely terminates a self-catalyzed reaction of photo-acid ions of the photoresist layer.

Abstract: A solution having a photosensitive radical is applied onto a resist film, a developing solution is applied thereonto, and the entire surface of the solution having the photosensitive radical is exposed all at once. Developing of the resist film progresses all at once after a coating film of the solution having the photosensitive radical dissolves in the developing solution, and hence time difference in the start time of developing does not occur in the surface of a substrate, thereby enabling uniform developing and an improvement in line width uniformity (CD value uniformity) in the surface of the substrate.