Abstract: A method and an apparatus for removing an organic film, such as a resist film, from a substrate surface are provided wherein a treatment liquid containing dissolved ozone, and preferably formed from liquid ethylene or propylene carbonate, or both, is contacted with the substrate having the organic film, and the organic film removed, wherein the apparatus contains (A) a treatment liquid delivery device, (B) a film contact device, (C) a liquid circulation device and (D) an ozone dissolution device.

Abstract: Transferring apparatus control means movement of a transferring apparatus for transferring a wafer to a resist liquid coating unit from a cooling process unit. A storage section of the transferring apparatus controller stores a coating time required for a resist film coating and a moving time required for the transfer of the wafer. When a coating start time of a resist film is inputted, the control section calculates a coating end time from the stored coating time. Further, the control section calculates time of taking out a wafer W, which is next subjected to a coating process from the cooling process unit, from the coating end time and the stored moving time. Based on the calculated time, the transferring apparatus controller instructs the transferring apparatus about timing to take out the wafer. This makes it possible to improve the throughput.

Abstract: A method for in process monitoring of the parameters of a substrate undergoing a processing within a photolithography tools arrangement which includes substrate loading and unloading stations, and substrate coating, exposure and developing stations. The method includes the step of supplying the substrate after being developed to a monitoring station and analyzing the monitoring data to estimate the photolithography process to be used for controlling thereof.

Abstract: A developing process of the photo-resist coated on the wafer is performed, cleaning the developing solution by a cleaning solution then transferring the wafer to the electron beam radiation unit before the rinsing solution and the resist dries out. The radiation chamber is replaced with a helium gas to form a predetermined degree of vacuum or atmospheric pressure. An electron beam is radiated and the front face of the wafer is heated for a predetermined period of time. In this method, deformation and breaking of a pattern caused by drying after the development can be prevented.

Abstract: A substrate treating apparatus has an antireflection film forming block, a resist film forming block and a developing block arranged in juxtaposition, each of these blocks including treating modules and a single main transport mechanism. The main transport mechanism transports substrates within each block, and transfers the substrates between the blocks through inlet substrate rests and outlet substrate rests provided as separate components. This construction realizes improved throughput of the substrate treating apparatus.

Abstract: A series of substrate transport paths for transporting substrates is arranged on upper and lower stories. Substrates are transferable between the substrate transport path on the first story and the substrate transport path on the second story. The paths include a going-only path for transporting the substrates forward, and a return-only path for transporting the substrates in the opposite direction, these paths being arranged on the upper and lower stories. An indexer connects one end of the substrate transport path on one story to one end of the substrate transport path on the other story. An interface connects the other end of the substrate transport path on one story to the other end of the substrate transport path on the other story. This construction efficiently reduces a waiting time due to interference between the substrates transported along the going-only path and the substrates transported along the return-only path.

Abstract: A coating method for a coating liquid includes preparing a coating surface which has a plurality of regions that are to be coated with said coating liquid; providing a plurality of storage chambers under atmospheric pressure in which said coating liquid is stored in respective amounts that enable the coating surfaces of said corresponding regions being coated to be coated to substantially the same coating thickness; disposing said corresponding regions being coated on the undersides of said storage chambers; and applying said coating liquid on the coating surfaces of said regions being coated by pushing said coating liquid stored in said storage chambers by said atmospheric pressure.

Abstract: A system and method is provided for applying a developer to a photoresist material layer disposed on a semiconductor substrate. The developer system and method employ a developer plate having a plurality of a apertures for dispensing developer. Preferably, the developer plate has a bottom surface with a shape that is similar to the wafer. The developer plate is disposed above the wafer and substantially and/or completely surrounds the top surface of the wafer during application of the developer. A small gap is formed between the wafer and the bottom surface of the developer plate. The wafer and the developer plate form a parallel plate pair, such that the gap can be made small enough so that the developer fluid quickly fills the gap. A differential voltage is applied to the developer plate and the wafer causing an electric field to be formed in the gap. Transportation of negatively charge photoresist material is facilitated by exposure to the electric field during the development process.

Abstract: A system is provided for adjusting a photo-exposure time of a manufacturing apparatus for semiconductor devices. The system for adjusting the photo-exposure time includes a photo-exposure unit whose photo-exposure time is adjustable according to one or more adjustment signals, a pre-exposure step influence prediction unit that obtains pre-exposure step processing information and extracts parameters that may influence a resulting pattern during photo-exposure, and provides this information as feed forward data, an inspection unit that checks processed steps during a certain period after photo-exposure and provides an inspection value as a feed back data, and a central processing unit that receives the feed forward and feedback data and, by means of a predetermined calculation method, generates the one or more adjustment signals, which are used to adjust the photo-exposure time.

Abstract: On the occasion of developing processing, a mixed solution produced by stirring a developing solution and a solution with a specific gravity smaller than the developing solution is supplied to the front surface of a substrate and left as it is for a fixed period of time. After the mixed solution is separated into two layers of which the lower layer is the developing solution and the upper layer is the solution, developing progresses all at once in the entire surface of the substrate. Hence, time difference in start time of developing does not occur in the surface of the substrate, thereby enabling uniform developing and an improvement in line width uniformity of a resist pattern film in the surface of the substrate.

Abstract: A substrate treating apparatus includes a heat-treating unit having a cooling unit and a local transport mechanism. The local transport mechanism, in time of standby, is placed in a standby position inside the cooling unit. The local transport mechanism in the standby position influences, and is influenced by, the environment outside the heat-treating unit less than where the local transport mechanism is kept on standby outside the heat-treating unit. Variations in substrate treating precision due to such adverse influences are reduced to perform substrate treatment with high precision.

Abstract: In a developing processing of a wafer having a resist film low in the dissolving rate in a developing solution formed thereon and subjected to an exposure treatment, a developing solution of a low concentration is supplied first onto a wafer and the wafer is left to stand for a prescribed time to permit a developing reaction to proceed, followed by further supplying a developing solution having a concentration higher than that of the developing solution supplied first onto the wafer, leaving the substrate to stand and subsequently rinsing the wafer, thereby improving the uniformity of the line width in the central portion and the peripheral portion of the wafer.

Abstract: A resist film is formed out of a resist material on a substrate, and then pre-baked. Next, the pre-baked resist film is exposed to extreme ultraviolet radiation through a photomask. Then, the exposed resist film is developed, thereby defining a resist pattern on the substrate. The pre-baking and exposing steps are carried out in a vacuum without subjecting the resist film to the air.

Abstract: After the first workpieces have been processed in the first process portion while the second workpieces are being processed in the second process portion, the first process portion in which the first process condition has been set for the third process condition. By repeating such processes, a plurality of workpieces can be successively processed in different types of process conditions.

Abstract: A method of providing fully automated processing of a Split Lot of wafers to manufacture semiconductor devices is provided. The method processes a test Lot of wafers with a production Lot. Processing of both Lots continue as a single Lot along the production processing path up to a split condition process. Processing of the production Lot is put on hold until the alternate processing or test Lot processing is completed. The two Lots are then merged and processed according to the original predefined process steps continue on both Lots.

Abstract: Provided is a method for increasing an etching selectivity of photoresist material. The method initiates with providing a substrate with a developed photoresist layer. The developed photoresist layer on the substrate is formulated to contain a hardening agent. Next, the substrate is exposed to a gas, where the gas is formulated to interact with the hardening agent. A portion of the developed photoresist layer is then converted to a hardened layer where the hardened layer is created by an interaction of the hardening agent with the gas. Some notable advantages of the discussed methods of increasing the selectivity of a photoresist include improved etch profile control. Additionally, by combining fabrication steps such as the hardening of the photoresist in an etch chamber, downstream etching processes may be performed without having to transfer the wafer to an additional chamber, thereby improving wafer throughput while minimizing handling.

Abstract: Provided is a developing apparatus which enables the time necessary for a development reaction to be shortened and permits uniform development. A chuck device 2 comprises a support portion 21 whose top surface is a horizontal surface and a spinner 22 disposed in the middle of this support portion 21. The support portion and the spinner are provided within an antiscattering cup 23. A groove which vacuum adsorbs a substrate W to be treated is formed on the top surface of the above-described spinner 22, a pipe which forms a circulation path 9 is disposed within the groove formed on the top surface of the support portion 21, and a cleaning nozzle 24 which cleans a developing solution which has flown behind the rear surface of the substrate W to be treated is disposed in a position which is nearest to the inside diameter of the top surface of the support portion 21. On the other hand, in a nozzle device 3, a spray nozzle 33 is attached to a horizontally reciprocating arm 31 via a columnar support 32.

Abstract: Methods and apparatus for controllably dispensing fluids within wafer track modules using rotatable liquid dispense arms and nozzles. The fluid dispense apparatus may be specifically selected for developing a photoresist-coated substrate. A series of one or more rotatable arms can be mounted adjacent to a mounted substrate within a develop module, wherein each arm supports a dispense nozzle that is connected to a fluid source. The dispense nozzle may be formed with a plurality of nozzle tips for dispensing selected developer and rinse fluids. Each rotatable arm can be configured to rotate about its longitudinal axis to selectively position the dispense nozzle between various dispense positions and non-dispense positions to reduce risk of dripping solution onto the substrate. Methods for developing photoresist-coated semiconductor wafers are also provided herein using developer and rinse fluid dispense apparatus with a dispense arm that is rotatable about its longitudinal axis.

Abstract: A substrate manager for a substrate exposure machine is used, in one example, as a platesetter. As such, it comprises a substrate storage system, containing one or more stacks of substrates, such as plates in one implementation. A substrate picker is provided for picking substrates from the stack of substrates. The substrates are then handed to a transfer system that conveys the substrates to an imaging engine. According to the invention, a substrate registration system is provided upstream of the imaging engine. At least one engaging member is provided for pushing the substrates on the substrate transfer system to a desired position. Preferably, two sets of engaging members are used, one on either side of the plates. This allows angular as well as positional registration.

Abstract: A system for regulating (e.g., terminating) a development process is provided. The system includes one or more light sources, each light source directing light to one or more patterns and/or gratings on a wafer. Light reflected from the patterns and/or gratings is collected by a measuring system, which processes the collected light. The collected light is indicative of the dimensions achieved at respective portions of the wafer. The measuring system provides development related data to a processor that determines the acceptability of the development of the respective portions of the wafer. The collected light may be analyzed by scatterometry and/or reflectometry systems to produce development related data and the development related data may be examined to determine whether a development process end point has been reached, at which time the system can control the development process and terminate development.

Abstract: A developer and a method of a developing process which improve upon uniformity in a size of a resist pattern are provided. The developer includes a wafer rotating system (10) and a wafer oscillating system (20) which oscillates whole of the wafer rotating system (10) in one-dimensional direction, and the wafer oscillating system (20) has a motor supporting part (4) which mounts and fixes a motor part (1), a rail (5) which engages a rail groove (41) formed on a bottom side of the motor supporting part (4) and also enables the motor supporting part (4) to slide smoothly in one-dimensional direction, a guide bar (6) which is coupled with the motor part (1) and transmits a propulsion which enables the motor part (1) to slide along the rail (5) and a linear motor part (7) which engages the guide bar (6) and is a propulsion supplying source which supplies the propulsion with the wafer rotating system (10) by sliding the guide bar (6) in the axial direction of the guide bar (6).

Abstract: A treating liquid adjusting equipment for adjusting an alkali-based treating liquid for use in treating an organic film applied onto a substrate, which includes an adjusting portion. The adjusting portion for adjusting an alkalinity of the alkali-based treating liquid is such that a concentration of a first component contained in the alkali-based treating liquid and constituting an organic film of a same type as or different type from the organic film is in a range of 0.0001 to 2.0 mass %, and a concentration of an alkali component contained in the alkali-based treating liquid is in a range of 0.05 to 2.5 mass %.

Abstract: A substrate (W) is held in an approximately horizontal position by a substrate holder (10) and is rotated by a spinning motor (13). A rinsing liquid supply nozzle (140) is rotatably supported at its one end by a second nozzle movement mechanism (150) and is rotated to pass over the substrate (W). The rinsing liquid supply nozzle (140) is rotated to pass over the substrate (W) and at the same time to discharge a rinsing liquid from its discharge unit. At this time, the rinsing liquid supply nozzle (140) and the substrate (W) are rotated so that a virtual scanning direction (La) of the substrate (W) is substantially perpendicular to a direction of extension of the rinsing liquid supply nozzle (140). That is, since the rinsing liquid supply nozzle (140) is shifted in the virtual scanning direction (La), a non-supplying area of the substrate (W) where a rinsing liquid is not supplied can successively be made up and eliminated as the scanning by the nozzle (140) proceeds.

Abstract: A manifold communicatively connects a plurality of coating processing units with an air conditioning unit. The manifold is formed by branching a common pipe into a plurality of distributing pipes. The air conditioning unit performs temperature control to set air passing through a branch point of the manifold to a temperature slightly lower than a target temperature in processing units. Secondary heaters secondarily heat air passing through joints between the distributing pipes and the processing units to the target temperature thereby supplying accurately temperature-controlled air to processing parts. Air from the air conditioning unit is diverted thereby suppressing the height of the overall apparatus. Thus, a substrate processing apparatus capable of inhibiting the height of the overall apparatus from remarkable increase also when vertically stacking processing parts in multiple stages and supplying temperature-controlled air to the processing parts with sufficient accuracy.

Abstract: Embodiments of the invention provide a liquid delivery system. The liquid delivery system generally includes a plurality of vessels flexibly coupled to a frame to provide vibration isolation therefrom. In one embodiment, the liquid delivery system includes tubing coupling liquids to/from the plurality of vessels, wherein the tubing is selected to minimize the transmission of mechanical noise to the plurality of vessels. In another embodiment, the liquid delivery system includes a controller adapted to monitor and control the delivery of the liquids throughout the system. In another embodiment, a method is provided to deliver liquids from storage vessels to substrate processing systems.

Abstract: Methods and apparatus for controllably dispensing fluids within wafer track modules using rotatable liquid dispense arms and nozzles. The fluid dispense apparatus may be specifically selected for developing a photoresist-coated substrate. A series of one or more rotatable arms can be mounted adjacent to a mounted substrate within a develop module, wherein each arm supports a dispense nozzle that is connected to a fluid source. The dispense nozzle may be formed with a plurality of nozzle tips for dispensing selected developer and rinse fluids. Each rotatable arm can be configured to rotate about its longitudinal axis to selectively position the dispense nozzle between various dispense positions and non-dispense positions to reduce risk of dripping solution onto the substrate. Methods for developing photoresist-coated semiconductor wafers are also provided herein using developer and rinse fluid dispense apparatus with a dispense arm that is rotatable about its longitudinal axis.

Abstract: A developer supply nozzle moves from a first end toward a second end of a substrate for supplying a developer to the overall main surface of the substrate. After a lapse of a required developing time, a rinse discharge nozzle moves from the first end toward the second end of the substrate for supplying a rinse to the overall main surface of the substrate. A partition plate is provided for preventing the rinse discharged from a slit discharge port of the rinse discharge nozzle onto the substrate from flowing frontward in the direction of movement of the rinse discharge nozzle or washing away the developer supplied onto the substrate frontward.

Abstract: A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.

Abstract: In this developing method and apparatus, a concentration measuring unit 222 picks part of developing fluid in a blending tank 186 to measure the resist concentration by an absorption photometry and feeds the detected resist concentration to a control unit 240. The control unit 240 controls respective valves 210, 212, 216 of a TMAH concentrate solution 200, a solvent pipe 204 and a drain pipe 208 in a manner that the developing fluid in the blending tank 186 has a TMAH concentration corresponding to a measured resist-concentration value to accomplish a constant developing rate, performing component control of the developing fluid. The developing fluid transferred from the blending tank 186 to a supply tank 188 is fed to a developer nozzle DN in a developing section 126 through a developer pipe 224 owing to the drive of a pump 228. Accordingly, even if the developing fluid is reused in the developing process in multiple times, it is possible to make sure of the uniformity in development.

Abstract: A resist coating unit includes a coater cup surrounding a wafer W held by a spin chuck and an air supply mechanism for blowing an air into the coater cup. The air supply mechanism includes a hollow frame having a first open portion formed in the vertical wall, an air blowing device for blowing an air into the hollow frame, and a filter chamber unit into which the air within the frame is introduced. The filter chamber unit includes a first air introducing chamber having a heater arranged therein, a second air introducing chamber, an air stream control mechanism, and a filter unit. The air flowing within the frame flows into the first air introducing chamber through the first open portion so as to be uniformly heated by the heater and, then, is introduced into the second air introducing chamber. Then, the air uniformly heated by the heater is blown into the coater cup through the air stream control mechanism and the filter unit.

Abstract: Embodiments of the invention provide a liquid delivery system. The liquid delivery system generally includes a plurality of vessels flexibly coupled to a frame to provide vibration isolation therefrom. In one embodiment, the liquid delivery system includes tubing coupling liquids to/from the plurality of vessels, wherein the tubing is selected to minimize the transmission of mechanical noise to the plurality of vessels. In another embodiment, the liquid delivery system includes a controller adapted to monitor and control the delivery of the liquids throughout the system. In another embodiment, a method is provided to deliver liquids from storage vessels to substrate processing systems.

Abstract: The apparatus comprises a substrate stage (WST) to mount a substrate (W) and a substrate carriage system (100) to carry a substrate to the substrate stage. The substrate carriage system includes a rotation table (42) that holds and moves the substrate in the X direction and a control system that detects the positional deviation of the substrate W rotating together with the rotation table (42) by using sensors (48) while moving in the X direction. Since the detection of the positional deviation of the substrate overlaps with the time the substrate is being carried, it improves the throughput, as well as improves the space efficiency since exclusive space for detection of the positional deviation is not required. Accordingly, this can reduce the manufacturing cost of devices such as semiconductor devices.

Abstract: A resist coating/developing system is equipped with a cassette station, a process station and an inspection station. The inspection station comprise a defect inspection unit, a dummy inspection unit, a bypass inspection unit and a main wafer transfer device. When sampling inspections on wafer W that have completed processing in the process station, if a failure has occurred in the defect inspection unit, the inspection wafer is placed in the bypass inspection unit and excluding the inspection wafer, the non-inspection wafers are placed in the dummy inspection unit in the order that they were transferred to the inspection station and the wafer W is transferred from the inspection station to the cassette station in the order transferred from the process station to the inspection station.

Abstract: The present invention is a solution treatment unit for supplying a treatment solution to a substrate and treating the substrate inside an accommodating vessel, comprising a frame for having the accommodating vessel mounted therein. The accommodating vessel has a structure which enables it to be pulled out in a predetermined direction from the frame. Therefore, the accommodating vessel can be pulled out from the frame at the time of maintenance, which makes it possible to secure sufficient work space for performing the maintenance and to appropriately perform the maintenance operation.

Abstract: Images being processed in a photographic laboratory system into different forms of output are automatically evaluated to determine for each image whether it is of sufficient quality to merit processing into a selected form of output.

Abstract: A solution-receiving plate having solution-passing holes for passing a developer solution therethrough toward the back side of the plate is provided. Respective surfaces of the solution-receiving plate and a substrate are at the same height, and the solution-receiving plate is placed on the front-end side of the substrate and separated slightly from the front end of the substrate. A supply nozzle is moved to apply a developer solution. Accordingly, when the developer solution extended continuously between the perimeter of the substrate and the supply nozzle is severed, the severed developer solution is prevented from returning to the developer solution already spread over the substrate and thus flow and waves are prevented from occurring in the developer solution spread on the surface of the substrate. A resist pattern with a highly uniform line width is thus produced.

Abstract: Since it is possible to exhaust air from a first peripheral region &agr; around a substrate undergoing processing and further exhaust air from a second peripheral region &bgr; between the first peripheral region and substrate, it is possible to reduce effects of the current of air on a developing solution on a substrate and to cause the developing solution used in development processing to act on the exposed resist on the substrate properly.

Abstract: On the occasion of developing processing, a mixed solution produced by stirring a developing solution and a solution with a specific gravity smaller than the developing solution is supplied to the front surface of a substrate and left as it is for a fixed period of time. After the mixed solution is separated into two layers of which the lower layer is the developing solution and the upper layer is the solution, developing progresses all at once in the entire surface of the substrate. Hence, time difference in start time of developing does not occur in the surface of the substrate, thereby enabling uniform developing and an improvement in line width uniformity of a resist pattern film in the surface of the substrate.

Abstract: The exposure apparatus and the substrate processing unit is connected via an in-line I/F portion. In addition, information on the substrate carriage is communicated in between the control unit of the exposure apparatus side and the control unit of the substrate processing unit, and both units decide their next operation that contribute to improving the processing capacity related to the wafer carriage, before actually starting the operation. Therefore, the throughput of the series of wafer processing performed by the substrate processing unit and the exposure apparatus can be improved, and as a consequence, becomes possible to improve the productivity of the device. In this case, for example, information on the predicted time or the expected time when the substrate can be received or sent out is reciprocally communicated between both units.

Abstract: A developer is supplied onto a substrate and thereafter a rinse discharge nozzle is moved toward an operating direction. The rinse discharge nozzle is so moved on the substrate as to continuously supply pure water onto the substrate from a slit discharge port of the rinse discharge nozzle while sucking and recovering the pure water from the surface of the substrate through a slit suction port, and a series of development is performed in a stationary state of the substrate.

Abstract: A method of forming a resist pattern on a substrate, comprises the steps of: forming a resist film on the substrate, supplying a developing solution onto the resist film, submerging the substrate and the resist film formed thereon in a rinsing liquid kept in a rinsing tank, and applying ultrasonic vibration to the rinsing liquid to rinse the developing solution from the resist film submerged in the rinsing liquid.

Abstract: There is disclosed a substrate treating method comprising supplying a treating solution onto a substrate, and continuously discharging a first cleaning solution to the substrate from a first discharge region disposed in a nozzle, while moving the nozzle and substrate with respect to each other in one direction, wherein a length of a direction crossing at right angles to the direction of the first discharge region is equal to or more than a maximum diameter or longest side of the substrate, the nozzle continuously spouts a first gas to the substrate from a first jet region, and the length of a direction crossing at right angles to the direction of the first jet region is equal to or more than the maximum diameter or longest side of the substrate.

Abstract: A substrate (SW) is rotatably held in an approximately horizontal position by a wafer holding and rotation mechanism (810). One end of a rinsing liquid supply nozzle (840) is rotatably supported by a rinsing liquid supply nozzle rotation supporting mechanism (850) to pass over the substrate (SW). In response to rotation of the rinsing liquid supply nozzle (840), the rotation axis of the rinsing liquid supply nozzle (840) moves in a direction closer to or away from the rotation axis of the substrate (SW), whereby the amount of projection of a tip portion of the rinsing liquid supply nozzle (840) is reduced.

Abstract: A system and method is provided for applying a developer to a photoresist material layer disposed on a semiconductor substrate. The developer system and method employ a developer plate having a plurality of a application apertures for dispensing developer and a plurality of exit apertures for allowing excess developer to be removed from between the developer plate and the photoresist material layer. Preferably, the developer plate has a bottom surface with a shape that is similar to the wafer. The developer plate is disposed above the wafer and substantially and/or completely surrounds the top surface of the wafer during application of the developer. A small gap is formed between the wafer and the bottom surface of the developer plate. The wafer and the developer plate form a parallel plate pair, such that the gap can be made small enough so that the developer fluid quickly fills the gap with excess developer exiting through the exit apertures.

Abstract: The mask guiding device of the present invention has a mask guiding device that guides a substrate received from the outside. The mask guiding device is provided with a plurality of receiving portions that receives said mask from the outside.

Abstract: A developer and a method of a developing process which improve upon uniformity in a size of a resist pattern are provided.

Abstract: Thermal processing unit sections each with ten tiers and coating processing unit sections each with five tiers are disposed around a first main wafer transfer section and a second main wafer transfer section, and in the thermal processing unit section, the influence of the time required for substrate temperature regulation processing on a drop in throughput can be reduced greatly by transferring the wafer W while the temperature of the wafer W is being regulated by a temperature regulation and transfer device.

Abstract: The present invention is a substrate processing apparatus for performing processing of a substrate including: a heat treatment unit provided in a casing of the processing apparatus and having a heating section in which a heat treatment of the substrate is performed; a duct provided on a side part on the heating section side of the casing; and a cooling flow passage provided in the duct for allowing a cooling fluid to flow therethrough. Heat generated from the heating section is prevented from conducting by an air current flowing in the duct, and further the heat is absorbed by the cooling fluid. Therefore, it is possible to prevent the heat from conducting to the outside of the casing.

Abstract: A system and method is provided for applying a developer to a photoresist material wafer disposed on a semiconductor substrate. The developer system and method employ a developer plate having a plurality of a apertures for dispensing developer. Preferably, the developer plate has a bottom surface with a shape that is similar to the wafer. The developer plate is disposed above the wafer and substantially and/or completely surrounds the top surface of the wafer during application of the developer. A small gap is formed between the wafer and the bottom surface of the developer plate. The wafer and the developer plate form a parallel plate pair, such that the gap can be made small enough so that the developer fluid quickly fills the gap. The developer plate is disposed in very close proximity with respect to the wafer, such that the developer is squeezed between the two plates thereby spreading evenly the developer over the wafer.

Abstract: On the occasion of developing processing, a mixed solution produced by stirring a developing solution and a solution with a specific gravity smaller than the developing solution is supplied to the front surface of a substrate and left as it is for a fixed period of time. After the mixed solution is separated into two layers of which the lower layer is the developing solution and the upper layer is the solution, developing progresses all at once in the entire surface of the substrate. Hence, time difference in start time of developing does not occur in the surface of the substrate, thereby enabling uniform developing and an improvement in line width uniformity of a resist pattern film in the surface of the substrate.