Abstract: In a crystalline silicon formation apparatus, a quick cooling method is applied to the bottom of a crucible to control a growth orientation of a polycrystalline silicon grain, such that the crystal grain forms twin boundary, and the twin boundary is a symmetric grain boundary, and the crystal grain is solidified and grown upward in unidirection to form a complete polycrystalline silicon, such that defects or impurities will not form in the polycrystalline silicon easily.

Abstract: A system for modifying dislocation distributions in semiconductor materials is provided. The system includes one or more vibrational sources for producing at least one excitation of vibrational mode having phonon frequencies so as to enhance dislocation motion through a crystal lattice.

Abstract: A crystallizer system for forming solid crystals includes a vessel defining a cylindrical sidewall, a sparge device located at a bottom of the vessel, a plurality of impellers attached to a shaft, and a plurality of redistribution funnel assemblies vertically spaced apart. Each funnel assembly may be positioned underneath a respective impeller of the plurality of impellers. Each funnel assembly may include a funnel, a disc attached to the shaft such that the disc rotates with the impellers, and a channel extending radially inward from a location near the sidewall. The channel may be adapted to direct gas bubbles from the sidewall to a location near blade outer edges of the respective impeller A lower edge of the funnel and the disc may define a lower gap therebetween, such that solid particles falling from within the funnel are directed out of the lower gap when the disc is rotated.

Abstract: A boule formed by high rate vapor phase growth of Group III-V nitride boules (ingots) on native nitride seeds, from which wafers may be derived for fabrication of microelectronic device structures. The boule is of microelectronic device quality, e.g., having a transverse dimension greater than 1 centimeter, a length greater than 1 millimeter, and a top surface defect density of less than 107 defects cm?2. The Group III-V nitride boule may be formed by growing a Group III-V nitride material on a corresponding native Group III-V nitride seed crystal by vapor phase epitaxy at a growth rate above 20 micrometers per hour. Nuclear transmutation doping may be applied to an (Al,Ga,In)N article comprises a boule, wafer, or epitaxial layer.

Abstract: A laser crystallization apparatus includes a box main body having an interior region, a barrier wall demarcating the interior region of the box main body into first and second operation chambers, the barrier wall having a through hole connecting the first and second operation chambers, a gas inflow port at one side of the first operation chamber, and a plurality of flow control plates in the second operation chamber and adjacent to the barrier wall.

Abstract: An arrangement and a method for producing high-purity crystals, such as temperature-sensitive pharmaceutical agents, in a countercurrent crystallization process. The arrangement comprises a plurality of crystallizers, mother liquor lines, each of which has a shut-off valve, and crystallization product lines, each of which has a shut-off valve, so that a mother liquor flow can be generated which is directed from a crystallizer to the second-next crystallizer in the direction of decreasing purity, and a crystallization product flow can be generated which is directed from a to dissolved crystallization product that is about to crystallize to the next crystallizer in the direction of higher purity.

Abstract: A process for the detection of polymorphic or pseudopolymorphic forms of solid, molecular and crystallizing compounds, or of molecular, cocrystalline compounds or of solid solutions which consist of at least two solid, molecular and crystallizing compounds, in a series investigation using an apparatus for parallel investigations in vessels of an array under different conditions in each vessel, in which substantially only the amorphous form of the crystallizing compound, a solvate of the crystallizing compound or substantially only the amorphous form or a solvate of a compound in a mixture of at least two compounds is used as a suspension or solution, the solutions of amorphous compound having, at the same temperature, a higher content of crystallizable compounds than is achievable with a corresponding crystalline compound.

Abstract: A method and installation for the production of a coarse-grained ammonium sulfate product by crystallization includes firstly generating a crystal having a grain smaller than the desired grain size in a pre-crystallizer and withdrawing a suspension therefrom, from which the fine crystal was previously separated in a classification connecting piece. This suspension, which contains medium-sized grain, is then conducted with a proportion of undersaturated mother liquor, which is sufficient for further crystal growth, into a DTB product crystallizer and crystallized therein to a desired grain size. The heating of the product crystallizer is performed by the heat contained in the vapors of the pre-crystallization. The pre-crystallization may also operate according to the DTB principle, wherein the mother liquor needed for crystallization is supplied in the form of separately admixed concentrated sulfuric acid and ammonia into the external solution loop of the pre-crystallizer.

Abstract: Methods and an apparatus for producing stable crystal polymorphs are provided. Inner surfaces of glass vials with a concave bottom topography are coated with nonstick compounds to select for nucleation of stable polymorphs.

Abstract: A process for producing non-solid-stated polyester polymer particles having one or more properties similar to polyester polymer particles that have undergone solid-state processing. In one embodiment, the process comprises (a) forming polyester polymer particles from a polyester polymer melt; (b) quenching at least a portion of the particles, (c) drying at least a portion of the particles, (d) crystallizing at least a portion of the particles, (e) annealing at least a portion of the particles. At all points during and between steps (b) through (e), the average bulk temperature of the particles is maintained above 165° C.

Abstract: Provided herein are apparatuses, systems and methods for the efficient generation of gradients.

Abstract: A reaction system and a reactor which comprises of two or more reaction cells wherein said cells are separated by inter cell conduits and having a means of causing agitation within the cells which does not require a mechanical connection of the agitating mechanism within the cell to a drive mechanism which is outside the cell.

Abstract: Methods for producing multicrystalline silicon ingots by use of a Czochralski-type crystal puller and pulling assemblies that include a plurality of seed crystals for pulling multicrystalline silicon ingots.

Abstract: The invention contemplates apparatuses for recognition of proteins and other biological molecules by imaging morphology, size and distribution of crystalline and amorphous dry residues in droplets (further referred to as “crystallization patterns”) containing predetermined amount of certain crystal-forming organic compounds (reporters) to which protein to be analyzed is added. Changes in the crystallization patterns of a number of amino-acids can be used as a “signature” of a protein added. Also, changes in the crystallization patterns, as well as the character of such changes, can be used as recognition elements in analysis of protein molecules.

Abstract: A method for providing liquid silicon comprising the method steps of filling (10) at least one crucible (50; 50a, 50b, 50c, 50d) with solid silicon (52), melting (12) the solid silicon (52) situated in the at least one crucible (50; 50a, 50b, 50c, 50d), and feeding (14; 24) liquid silicon (58) to the silicon (54) situated in the at least one crucible (50; 50a, 50b, 50c, 50d), and a device for carrying out the method.

Abstract: The present invention provides an atomizer for producing finely dispersed spray of slurry/liquid and a process for the preparation of free flowing spray dried alumina powder. The jet-wheel impact atomizer based on the principle of addition of momenta has been invented and developed for spray drying. The atomizer works at significantly low slurry/liquid pressure (1-5 bar) and relatively lower speed (6000-14000 rpm). It saves a considerable amount of energy in view of above two advantages. Suspended solid in liquid is used as the feed slurry which is ejected from a nozzle in the form of a jet to hit against the toothed surface of a rotating wheel to cause atomization. The sprayed droplets are dried inside an associated drying chamber and collected through a screw conveyor at the bottom of the chamber. The feed solid at slurry stage is taken in the form of powder and includes ceramic, inorganic and organic compounds, food, drugs and Ayurvedic products.

Abstract: The invention relates to a device for the partial crystallization of a phase in a solution, comprising at least one pump for circulation of the solution in a circuit of a heat exchanger formed from at least one tube in contact with a cooling circuit, characterized in that the circuit of the exchanger includes static means to mix the solution, so that the crystallized particles of the phase are continuously mixed with the solution during the circulation of said solution. The invention also relates to an assembly including several devices according to the invention or several parts of such a device. The invention also relates to a method to use such a device.

Abstract: Process and apparatus for reducing organic content of brine comprising subjecting a brine solution to at least two purification treatments selected from electrochemical treatment, chlorinolysis, or other chemical oxidation treatment, carbon adsorption, extraction, biological treatment and chrystallizing treatment; wherein the organic content of purified brine is sufficiently low to enable sense of the purified brine in an industrial process.

Abstract: A device is provided for producing a crystallized silicon body for solar cells. The device includes a reaction vessel, a silicon container arranged within the reaction vessel for containing a raw silicon material, an upper heater arranged above the silicon container for heating the raw silicon material contained in the silicon container, a lower heater arranged below the silicon container for heating the raw silicon material contained in the silicon container, and an insulator unit arranged inside the reaction vessel for surrounding the silicon container, the upper heater and the lower heater. The insulator unit is provided with a side insulator which includes a fixed side insulation member, a plurality of movable side insulation members coupled with the fixed side insulation member and a plurality of side actuators operatively connected to the movable side insulation members for moving the movable side insulation members toward or away from the silicon container.

Abstract: Processes and apparatus for purifying brine are provided including (1) providing an aqueous brine solution comprising one or more inorganic salts and one or more organic compounds and (2) conducting at least one unit operation for removing organic compounds from the brine solution to obtain a purified brine solution.

Abstract: The present invention provides a method for producing metal-supported carbon, which includes supporting metal microparticles on the surface of carbon black, by a liquid-phase reduction method, in a thin film fluid formed between processing surfaces arranged to be opposite to each other so as to be able to approach to and separate from each other, at least one of which rotates relative to the other, as well as a method for producing crystals comprising fullerene molecules and fullerene nanowhisker/nanofiber nanotubes, which includes uniformly stirring and mixing a solution containing a first solvent having fullerene dissolved therein, and a second solvent in which fullerene is less soluble than in the first solvent, in a thin film fluid formed between processing surfaces arranged to be opposite to each other so as to be able to approach to and separate from each other, at least one of which rotates relative to the other.

Abstract: A nanovolume microcapillary crystallization system allows nanoliter-volume screening of crystallization conditions in a crystal card that allows crystals to either be removed for traditional cryoprotection or in situ X-ray diffraction studies on protein crystals that grow within. The system integrates formulation of crystallization cocktails with preparation of the crystallization experiments. The system allows the researcher to select either gradient screening in crystallization experiments for efficient exploration of crystallization phase space or a combination of sparse matrix with gradient screening to execute one comprehensive hybrid crystallization trial.

Abstract: The present invention is apparatus for, and method of, purification of silicon by electric induction heating and melting of silicon in a crucible or susceptor vessel, with subsequent directional partial cooling of the silicon melt to an initial amorphous-to-crystalline (solidification) temperature to produce a directionally solidified purified quantity of silicon and a separate quantity of high impurity silicon. The quantity of high impurity silicon is removed from the vessel and the purified quantity of silicon at solidification temperature is remelted in the vessel for removal from the vessel or further processing.

Abstract: A crystal forming apparatus and method for using the apparatus, the method including depositing a precipitant solution in a site, incubating the site, during which time volatile vapor evaporates from the precipitant solution and accumulates in the site, and pumping the accumulated volatile vapor away from the site. An exemplary apparatus includes a sealed site except for a vent on the sealed site. In one embodiment, the vent is a passive vent that inhibits vapor diffusion out of the site. In another embodiment, the vent is an active vent that opens in response to a pressure differential. The present invention accelerates and controls the crystal growth process by pumping volatile vapor away from the sealed site.

Abstract: Disclosed is a crystallization apparatus capable of locally crystallizing amorphous silicon. The crystallization apparatus includes a heat emission part, a support part and a roller. The heat emission part emits heat upon receiving a heat emission source. The support part supports the heat emission part and provides the heat emission source to the heat emission part. The roller receives the heat emission part and has at least one opening to provide heat to a target (e.g., amorphous silicon). Local crystallization is performed without causing damage to a substrate.

Abstract: A temperature gradient is established in a crystallization crucible by means of a heat source and a cooling system. The cooling system comprises a heat exchanger and an adjustable additional heat source. The cooling system is preferably formed by an induction coil cooled by a coolant liquid circulating in the induction coil and by an electrically conductive induction susceptor positioned between the crucible and induction coil. The fabrication process comprises heating the crucible via the top and controlling heat extraction from the crucible downwards by means of the heat exchanger and by means of regulation of the adjustable additional heat source.

Abstract: A directional solidification furnace includes a crucible for holding molten silicon and a lid covering the crucible and forming an enclosure over the molten silicon. The crucible also includes an inlet in the lid for introducing inert gas above the molten silicon to inhibit contamination of the molten silicon.

Abstract: In the growth of a SiC boule, a growth guide is provided inside of a growth crucible that is charged with SiC source material at a bottom of the crucible and a SiC seed crystal at a top of the crucible. The growth guide has an inner layer that defines at least part of an opening in the growth guide and an outer layer that supports the inner layer in the crucible. The opening faces the source material with the seed crystal positioned at an end of the opening opposite the source material. The inner layer is formed from a first material having a higher thermal conductivity than the second, different material forming the outer layer. The source material is sublimation grown on the seed crystal in the growth crucible via the opening in the growth guide to thereby form the SiC boule on the seed crystal.

Abstract: This invention relates to an apparatus and a method of use for an inert gas rebreather used in furnace operations, such as melting and/or casting high purity silicon for solar cells and solar modules. The apparatus includes a process chamber, a reservoir in fluid communication with the process chamber, and a motive force device in fluid communication with the process chamber and the reservoir. Recycling or reusing the inert gas reduces operating expenses of the casting process while maintaining low impurity levels in the cast silicon.

Abstract: Techniques and apparatuses for making carbon nanotube (CNT) papers are provided. In one embodiment, a method for making a CNT paper may include disposing a structure having an edge portion including a relatively sharp edge into a CNT colloidal solution and withdrawing the structure from the CNT colloidal solution.

Abstract: In one embodiment, a crystallization and screening plate comprises a plurality of cells open at a top and a bottom, a frame that defines the cells in the plate, and at least two films. The first film seals a top of the plate and the second film seals a bottom of the plate. At least one of the films is patterned to strongly pin the contact lines of drops dispensed onto it, fixing their position and shape. The present invention also includes methods and other devices for manual and high-throughput protein crystal growth.

Abstract: The present invention is directed to a device and method of controlling the phase separation of one or a mixture of two or more spider silk proteins, leading to the defined and controllable assembly of the said silk protein(s) to defined morphologies, such as spheres, nano fibrils, threads, etc.

Abstract: The present invention provides microfluidic systems and methods for the production of particles (e.g., nanoparticles) for drug delivery. The present invention provides microfluidic devices useful for production of particles by nanoprecipitation. The present invention provides highly homogenous compositions of particles produced by inventive microfluidic devices.

Abstract: In a method for crystallising plastic granules with a tendency to conglutinate, in particular PET and PU granules, the granules are subjected to vibratory excitation in a vibrating trough (1) transversely to the direction of longitudinal extension of the vibrating trough (1), at around their reaction temperature. The flow of granules follows a spiral path through the trough, achieving a narrow dwell time spectrum and a homogenous temperature gradient for the granules. Conglutination is also reliably prevented.

Abstract: The present invention relates to a microfluidic device comprising at least one crystallization chamber adapted for comprising a solution in which at least one compound is present according to a concentration gradient, and wherein the geometry of said crystallization chamber allows for convection phenomena to be limited. The invention also relates to the use of said device, in particular for crystallization by counter diffusion and to a crystallization method.

Abstract: Method and apparatus for temperature controlled processes in a vessel to provide improved process control, in particular to enable controlled temperatures to be applied to a substance in different process zones of a vessel, has a series of tubular members arranged and operatively connected in a flow system, and each process zone has temperature regulating means juxtaposed thereto for effecting temperature control therein.

Abstract: Apparatuses and methods for making a multi-crystalline silicon ingot by directional solidification comprising two or more moveable heat shields located beneath the crucible, the heat shields being opened in a controlled manner to remove heat and produce a high quality silicon ingot.

Abstract: The invention provides operating the dry or solvent fractionation of oils and fats in a crystallizer comprising a crystallization vessel (1,2), an agitator, cooling means and a drive, wherein said drive provides said agitator with an oscillating motion, and/or a rotating motion around an axis, with the proviso that each point of said agitator moves at substantially the same linear speed. The invention also provides a crystallizer comprising a crystallization vessel (1,2) having a polygonal cross-section, an agitator and a drive, wherein said drive provides said agitator with an oscillating motion, and wherein said agitator is not inclined to the moving direction.

Abstract: The invention relates to a microfluidic device for promoting crystallisation of target molecules, such as proteins. The device comprises a solid structure with a top face and an opposite bottom face and with a least one liquid channel. The liquid channel comprises a target molecule solution inlet and at least two precipitant inlets. The target molecule solution inlet is in liquid communication with each of the precipitant inlets through the liquid channel. The liquid channel comprises a branching channel section adjacent to the target molecule solution inlet, crystallisation channel sections adjacent to the respective precipitant inlets and flow break channel sections arranged between the branching channel section and each of the crystallization channel sections.

Abstract: A method of making a solar grade silicon wafer is disclosed. In at least some embodiments of this invention, the method includes the follow steps: providing a slurry including a liquid that essentially prevents the oxidation of silicon powder and a silicon powder that is essentially free of oxides; providing a solar grade wafer mold defining an interior for receiving the slurry; introducing the slurry into the solar grade wafer mold; precipitating the silicon powder from the slurry to form a preform of the solar grade silicon wafer; and crystallizing the preform to make the solar grade silicon wafer.

Abstract: This invention relates to a method for direct solidification of semiconductor grade multi-crystalline silicon ingots allowing improved control with the solidification process and reduced levels of oxygen and carbon impurities in the ingot, by crystallizing the semiconductor grade silicon ingot, optionally also including the melting of the feed silicon material, in a crucible made of silicon nitride, or in a crucible made of a composite of silicon carbide and silicon nitride, and where the wall thickness of the bottom of the crucible is dimensioned such that the thermal resistance across the bottom is reduced to a level of at least the same order as thermal resistance across the support below carrying the crucible or lower.

Abstract: A method is provided for cutting beaded fabric that includes a bead attached to cloth-like material. According to one embodiment, a continuous length of the beaded fabric is fed through a guide into a die-cutting press and is die-cut via a soft anvil die while the material is retained in the guide. A guide is also provided for retaining the beaded fabric during die-cutting operations. Pre-cut beaded fabric is also provided that is easily separated into tie-downs. A continuous cutting method is also provided for forming individual tie-downs from a combination of fabric and plastic material used to form a bead on the fabric. The continuous cutting method may include die-cutting beaded fabric, placing a mark on a bead of the beaded fabric, and severing the bead at the mark.

Abstract: ZMR apparatuses provide for controlled temperature flow through the system to reduce energy consumption while providing for desired crystal growth properties. The apparatus can include a cooling system to specifically remove a desired amount of heat from a melted film to facilitate crystallization. Furthermore, the apparatus can have heated walls to create a background temperature within the chamber that reduces energy use through the reduction or elimination of cooling for the chamber walls. The apparatuses and corresponding methods can be used with inorganic films directly or indirectly associated with a porous release layer that provides thermal insulation with respect to an underlying substrate. If the recrystallized film is removed from the substrate, the substrates can be reused. The methods can be used for large area silicon films with thicknesses from 2 microns to 100 microns, which are suitable for photovoltaic applications as well as electronics applications.

Abstract: A crystal-growing furnace having a slurry drainage duct structure includes a furnace body, a supporting table, a loading frame, a plurality of eaves elements, and a set of eaves gutters. The supporting table includes a table plate and a plurality of supporting posts. The loading frame includes a lower plate and four side plates, where four elongated eaves boards descend from sides of the lower plate. Four eaves gutters, having V-shaped grooves, are connected with one another and disposed beneath the four eaves elements correspondingly.

Abstract: The present invention generally relates to encapsulation of crystallization solutions in pierceable reservoirs in order to prevent evaporation of the crystallization solutions, thereby allowing safe transport/shipping, from a workstation to another workstation, and safe storage of pre-filled microplates used to carry large number of vapor-diffusion crystallization experiments.

Abstract: A process for purifying removal of crystals from their suspension in mother liquor by means of a washing column having forced transport in which the process chamber is encased by a metal wall which, on its side facing away from the process chamber, is heated at least along the length of the pure melt zone.

Abstract: The present invention provides a method for adiabatic cooling type crystallization of organic compound and an apparatus therefore, by which running cost and facility cost can be reduced.

Abstract: A method for treating fluoride-containing waste water is disclosed. The method includes, first, inducing fluoride-containing waste water and calcium compound into a crystallization reaction tank having a plurality of crystallizing webs so as to conduct a reaction between the fluoride-containing waste water and the calcium compound to form calcium fluoride crystals on the crystallizing webs; meanwhile, stirring the fluoride-containing waste water and the; then, discharging the fluoride-containing waste water out of the crystallization reaction tank for conducting a successive treating step.

Abstract: Reactor vessel for an apparatus for forming particles of a target substance, includes: a first tube having an inlet end for receiving a supercritical antisolvent fluid and an outlet end for transmitting particles formed within the reactor vessel, and a second tube, coaxial with the first tube and having an inlet end for receiving a solvent containing a solute of a target substance to be precipitated and an outlet end within the first tube for allowing contacting the supercritical antisolvent fluid with the solvent. The reactor vessel may be easily scaled up by connecting the outlet end of each first tube of a plurality of first tube/second tube pairs to a single container for receiving the formed particles.

Abstract: This invention intends to enable silicon compound to be removed from waste etching solution at a high removal rate and waste etching solution to be recycled without disposing it. The etching solution reproducing apparatus includes: temperature adjusting means for adjusting the temperature of taken out waste etching solution; atomizing means for atomizing waste etching solution adjusted in temperature by the temperature adjusting means; precipitating means for collecting waste etching solution atomized by the atomizing means and precipitating silicon compound in the waste etching solution; and separating means for separating silicon compound precipitated from the waste etching solution by the precipitating means so as to obtain reproduced etching solution.