Publication number: 20030132123
Abstract: The invention encompasses methods of forming titanium-based mixed-metal materials and zirconium-based mixed-metal materials utilizing one or more of a reduction process, electrolysis process and iodide process. The invention also encompasses a sputtering target comprising zirconium and one or more elements selected from the group consisting of Al, B, Ba, Be, Ca, Ce, Co, Cs, Dy, Er, Fe, Gd, Hf, Ho, La, Mg, Mn, Mo, Nb, Nd, Ni, Pr, Sc, Sm, Sr, Ta, Ti, V, W, Y, and Yb. The invention also encompasses a sputtering target comprising titanium and boron.
Type:
Application
Filed:
January 21, 2003
Publication date:
July 17, 2003
Inventors:
Stephen P. Turner, Joseph E. Green, Rodney L. Scagline, Yun Xu
Patent number: 6500779
Abstract: This invention concerns catalysts comprising a molybdenum compound of formula I, II, III, IV or V
I VqMoAyOz
II NiMoxByOz′
III VNiwMoxCy′Oz″
IV CoNiwMoxDyOz′″
V VNiwCorMoxEyOz″″
wherein: A is at least one cation selected from the group consisting of cations of: Cr, Sb, Co, Ce and Pb; B is at least one cation selected from the group consisting of cations of: Sb, Al and W; C is at least one cation selected from the group consisting of cations of: Fe, Zn, Al, Sb, Bi, W, Li, Ba, Nb and Sn; D is at least one cation selected from the group consisting of cations of: Ba, Mn, Al, Sb, Sn, and W; E is at least one cation selected from the group consisting of cations of: Fe, Ca, Mn, Sr, Eu, La, Zr, Ga, Sn and Pb; q, r, w, x and y are each independently a number from 0.1 to 10 and y′ is a number from 0 to 10, z, z′, z″, z′″, and z″″ are determined using the amounts and oxidation states of all cations present in each formula.
Type:
Grant
Filed:
June 11, 2001
Date of Patent:
December 31, 2002
Assignee:
E. I. du Pont de Nemours and Company
Inventors:
Kostantinos Kourtakis, John Donal Sullivan
Patent number: 6461581
Abstract: The present invention provides a clathrate compound which can be used as a thermoelectric material, a hard material, or a semiconductor material. Silicon or carbon are formed into a clathrate lattice, and a clathrate compound is then formed in which specified doping atoms are encapsulated within the clathrate lattice, and a portion of the atoms of the clathrate lattice are substituted with specified substitution atoms. The clathrate lattice is, for example, a silicon clathrate 34 (Si34) mixed lattice of a Si20 cluster including a dodecahedron of Si atoms, and a Si28 cluster including a hexahedron of Si atoms. Suitable doping atoms are atoms from group 1A, group 2A, group 3A, group 1B, group 2B, group 3B, group 4A, group 5A, group 6A, and group 8, and suitable substitution atoms are atoms from group 1A, group 2A, group 3A, group 1B, group 2B, group 3B, group 5A, group 6A, group 7A, group 5B, group 6B, group 7B, and group 8 of the periodic table.
Type:
Grant
Filed:
August 2, 2000
Date of Patent:
October 8, 2002
Assignees:
Ishikawajima-Harima Heavy Industries Co., Ltd.
Inventors:
Haruki Eguchi, Akihiko Suzuki, Satoshi Takahashi, Kaoru Miyahara, Tohru Tanaka, Shigemitsu Kihara, Kazuo Tsumuraya