Abstract: Provided is a method for separating and recovering conversion reaction gas, wherein after a conversion reaction process for producing trichlorosilane from hydrogen gas and silicon tetrachloride comprising; condensing step of cooling discharged gas, separating step of silicon tetrachloride from the condensed liquid, and recovering disilicon hexachloride. For example, the method includes a first distillation process for distilling trichlorosilane from the condensed liquid, a second distillation process for distilling silicon tetrachloride from residual liquid of the first distillation process, and a third distillation process for distilling disilicon hexachloride from residual liquid of the second distillation process.

Abstract: High yields of trichlorosilane are achieved in the reaction of tetrachlorosilane and hydrogen at a temperature in the range of 900° C. to 1300° C. and a pressure above the critical pressure of the reactants.

Abstract: An apparatus for producing trichlorosilane includes: a decomposing furnace, a heating unit heating the inside of the decomposing furnace, a raw material supplying tube for guiding polymer and hydrogen chloride to be guided to the inner bottom portion of the decomposing furnace, and a gas discharge tube for discharging reaction gas from the top of the reaction chamber provided between the outer peripheral surface of the raw material supplying tube and the inner peripheral surface of the decomposing furnace, a fin, which guides a fluid mixture of the polymer and the hydrogen chloride supplied from the lower end opening of the raw material supplying tube to be agitated and rise upward in the reaction chamber, and is formed integrally with at least one of the outer peripheral surface of the raw material supplying tube and the inner peripheral surface of the decomposing furnace.

Abstract: An apparatus 1 for manufacturing trichlorosilane includes a decomposition furnace 2 into which polymers and hydrogen chloride are introduced, the decomposition furnace 2 includes: a heating device 11 which heats an interior of the decomposition furnace 2; a reaction chamber 4 which is formed in the decomposition furnace; a center tube 3 which is inserted in the reaction chamber 4 along a longitudinal direction of the reaction chamber and has a lower-end opening portion 3a; raw-material-supply pipes 5 and 6 which supplies the polymer and the hydrogen chloride to the reaction chamber 4 at an exterior of the center tube 3; and a gas-discharge pipe 7 which leads out reacted gas from the center tube 3, the apparatus 1 further includes a fin 14 that leads the polymer and the hydrogen chloride to the lower-end opening portion 3a of the center tube 3 so as to stir the polymer and the hydrogen chloride.

Abstract: Purified SiHCl3 and/or SiCl4 are used as a sweep gas across a permeate side of a gas separation membrane receiving effluent gas from a polysilicon reactor. The combined sweep gas and permeate is recycled to the reactor.

Abstract: The invention provides a process for thermal cleavage of the high-boiling residues of the direct Müller-Rochow synthesis to give silanes with hydrogen chloride in a fluidized bed of silicon dioxide-containing, aluminum-free particles.

Abstract: A reactor for hydrogenation of a silicon tetrahalide and metallurgical grade silicon to trihalosilane includes a bed of metallurgical silicon particles, one or more gas entry ports, one or more solids entry ports, one or more solids drains and one or more ports for removing the trihalosilane from the reactor. Fresh surfaces are generated on the bed particles by internal grinding and abrasion as a result of entraining feed silicon particles in a silicon tetrahalide/hydrogen feed stream entering the reactor and impinging that stream on the bed of silicon particles. This has the advantages of higher yield of the trihalosilane, higher burnup rate of the MGS, removal of spent MGS as a fine dust carryover in the trihalosilane effluent leaving the reactor and longer times between shutdowns for bed removal.

Abstract: Provided is an organic chlorohydrosilane, a useful starting material for preparing silicon polymers and a method for preparing the same. More particularly, the present invention enables the synthesis of various novel organic chlorohydrosilanes in high yield by an exchange reaction between an Si—H bond of a chlorosilane which can be obtained in an inexpensive and easy manner and an Si—Cl bond of an another organic chlorosilane using a quaternary organic phosphonium salt compound as a catalyst. Since the catalyst can be recovered after its use and reused, the present invention is very economical and thus effective for mass-producing silicon raw materials.

Abstract: The systems and method of the invention involve hydrochlorination by providing feed streams with suitable reaction conditions through reactant stream conditioning systems and components. The conditioning systems facilitate vaporization of silicon tetrachloride in gaseous hydrogen to produce a reactant stream comprising hydrogen that is saturated with silicon tetrachloride. Saturation can be effected without the use of superheated steam or hot oil by utilizing saturated steam that is less than about 15 bar. The saturated reactant stream can be further heated to reaction conditions that effect conversion to trichlorosilane.

Abstract: The invention relates to a method for producing oligohalogen silanes, selected from oligohalogen silanes of the general formulas (1) and (2): SixX2n+2 (1), SimX2m (2), wherein a mixture comprising silicon and metal halogenide selected from Ti, Zr, Hf, V, Nb, Mo, W, Fe, Co, Ni, Gu, Cd, In, Sn, P, Sb, Bi, S, Se, Te and Pb and mixtures thereof is converted at a temperature of ?125° C. to 1100° C. and the oligohalogen silanes formed are removed by means of a carrier gas selected from N2, noble gases, CH3Cl, HCl, CO2, CO, H2, and SiCl4, where X is selected from Cl, Br and J, n is a whole number from 2 to 10, and m is a whole number from 3 to 10.

Abstract: The present invention relates to a method for producing trichlorosilane. In this method for producing trichlorosilane, first, silicon tetrachloride and hydrogen are subjected to a conversion reaction at a temperature of equal to or higher than 1000° C. and equal to or lower than 1900° C., to produce a reaction gas containing trichlorosilane, dichlorosilylene, hydrogen chloride and high-order silane compounds, and then the reaction gas discharged from the conversion furnace is cooled to 600° C. or higher within 0.01 seconds from the initiation of cooling and to 500° C. or lower within 2 seconds. Subsequently, the reaction gas is maintained in a temperature range of equal to or higher than 500° C. and equal to or lower than 950° C. for a time period of equal to or longer than 0.01 seconds and equal to or shorter than 5 seconds. The reaction gas is further cooled to below 500° C.

Abstract: The invention relates to a method for producing neopentasilanes of the general formula (1) Si(SiR3)4 (1), wherein silicon compounds of the general formula (2) R3Si— (SiR2—)xSiR3 (2), where R is selected from Cl, Br, and I, and x is a non-negative whole number up to 5, are converted in the presence of catalytically active compounds (K), wherein the separating of the tetrahalogen silane formed thereby takes place by distilling out in the presence of a compound (L) that is liquid at room temperature having a higher boiling point than the released tetrahalogen silane.

Abstract: Method and apparatus for producing molten purified crystalline silicon from low-grade siliceous fluorspar ore, sulfur trioxide gas, and a metallic iodide salt. Method involves: (1) initially reacting silicon dioxide-bearing fluorspar ore and sulfur trioxide gas in sulfuric acid to create silicon tetrafluoride gas and fluorogypsum; (2) reacting the product gas with a heated iodide salt to form a fluoride salt and silicon tetraiodide; (3) isolating silicon tetraiodide from impurities and purifying it by washing steps and distillation in a series of distillation columns; (4) heating the silicon tetraiodide to its decomposition temperature in a silicon crystal casting machine, producing pure molten silicon metal ready for crystallization; and pure iodine gas, extracted as liquid in a cold-wall chamber. The system is batch process-based, with continuous elements. The system operates largely at atmospheric pressure, requiring limited inert gas purges during batch changes.

Abstract: The present invention relates to a method for producing trichlorosilane having a reduced amount of boron compounds. The method including: (A) reacting metallurgical grade silicon with hydrogen chloride in a fluidized-bed reactor to produce a reaction gas including trichlorosilane; (B) first distilling the reaction gas, for separating first vapor fractions and first residue fractions, by setting a distillation temperature at a top of a distillation column between about a boiling point of trichlorosilane and about a boiling point of tetrachlorosilane and feeding the first vapor fractions to a second distillation column; (C) second distilling, for separating the trichlorosilane and second vapor fractions including boron compounds, by setting a distillation temperature at a top of the distillation column between about a boiling point of dichlorosilane and about a boiling point of trichlorosilane; and (D) feeding back the second vapor fractions to the fluidized-bed reactor.

Abstract: The invention relates generally to heaters and methods of using the heaters. In certain embodiments, a heater includes a pressure shell having a cylindrical heating cavity, an annular heat shield disposed within the cylindrical heating cavity, and at least one heating element disposed within an interior volume of the annular heat shield. In another embodiment, a method of preparing a trichlorosilane includes introducing a reactant stream comprising silicon tetrachloride into a heater, passing electrical current through a heating element to heat the reactant stream, and introducing the heated reactant stream into a reactor.

Abstract: Disclosed is a method for collecting hexachlorodisilane which is produced as a by-product in the production of trichlorosilane from tetrachlorosilane and hydrogen. The method has the steps of: reacting a source gas composed of vaporized trichlorosilane and hydrogen at a temperature ranging from 700 to 1400° C. to yield a reaction product gas; cooling the reaction product gas to a temperature ranging from 30 to 60° C. to yield a cooled condensate liquid containing hexachlorodisilane; and concentrating and collecting a high boiling material containing hexachlorodisilane from the cooled condensate liquid.

Abstract: A process of producing silicon tetrafluoride from fluoride containing feedstocks. The process calcines the fluoride containing feedstock and a silica containing feedstock before reacting the mixture with sulfuric acid to produce silicon tetrafluoride. The silicon tetrafluoride is scrubbed with sulfuric acid. Excess sulfuric acid is recycled to the process. The process demonstrates an economic and environmentally friendly way to produce high quality silicon tetrafluoride.

Abstract: A process for producing silicon comprises the steps of a reduction step [1] of depositing silicon by reacting chlorosilanes and hydrogen in a reactor under heat and discharging an exhaust gas that contains hydrogen, oligomers of silanes, and a silicon powder; a carring step [2] of carrying the exhaust gas that has been exhausted in the step [1] while keeping a temperature of the exhaust gas at not less than 105° C.; a removal step [3] of supplying the exhaust gas that has been carried in the step [2] to a filter at a temperature of not less than 105° C. and discharging the exhaust gas from the filter at a temperature of not less than 105° C. to remove the silicon powder from the exhaust gas and give a mixed gas that contains the hydrogen and the oligomers of silanes; and a separation step [4] of cooling the mixed gas that has been obtained in the step [3] to separate the hydrogen as a gas phase from the mixed gas.

Abstract: Aluminum chloride from a gas containing chlorosilanes produced in a chlorination reactor is effectively removed. A container 1 is filled with sodium chloride and heated by a heating device 17, a gas containing chlorosilanes produced by a reaction between metallurgical grade silicon and hydrogen chloride passes through the sodium chloride layer 16 to generate a double salt of aluminum chloride contained in the gas and the sodium chloride, and the gas from which the double salt is separated is recovered from a gas recovery tube 26.

Abstract: An object of the invention is to provide a process for preparing a fluorine compound, which can easily give the objective fluorine compound using an oxygen-containing compound as a raw material without forming water as impurities as a by-product. The process for preparing a fluorine compound according to the invention includes reacting an oxygen-containing compound, which is at least one kind selected from the group consisting of oxides, hydroxides, hydrates, carbonic acid compounds, hydrogencarbonic acid compounds, boric acid compounds, sulfuric acid compounds, sulfurous acid compounds, phosphorous acid compounds and phosphoric acid compounds of at least any one kind selected from the group consisting of metal elements, H, B, C, N, Si, P, S, As, Se, Te and halogens, at least with carbonyl fluoride to form at least a fluorine compound and carbon dioxide without forming water as a by-product.

Abstract: The present invention relates to a method of continuously producing tetrafluorosilane (SiF4) by using various fluorinated materials, amorphous silica (SiO2) and sulfuric acid (H2SO4). According to the present invention, the yield of tetrafluorosilane can increase and it can be continuously produced in an environmentally friendly manner with low cost. In addition, the amount of hydrogen fluoride generated during the reaction is minimized and thus the corrosion of devices can be minimized, and the pipeline blockage and yield decrease of SiF4 can be prevented by passing the reaction product which is a mixture gas of SiF4 and water through an H2SO4 scrubber at a high temperature to remove water, which can prevent the generation of silica gel and hexafluorosilicic acid by the side-reaction of condensed water and SiF4.

Abstract: A process is disclosed for purification of silicon source material including trichlorosilane. First, the silicon source material in liquid state with impurities vapor and the other chlorosilane or silane are passing a first high gravity rotating packed bed with spongy metal, at a temperature lower than the boiling point of the silicon source material, the impurities vapor and the other chlorosilane or silane are separated from the liquid silicon source material; second, the silicon source material in liquid state is fed to a second high gravity rotating packed bed, oxygen is also fed to the second high gravity rotating packed bed to form impurity containing siloxane complexes with higher boiling point. Finally distilling to remove the impurity containing siloxane complexes from the silicon source material.

Abstract: Waste streams from different chloromonosilane production processes are combined and reacted in a single recovery process. Useful monosilane species may be obtained with a single recovery process.

Abstract: A process for preparing trichloromonosilane, in which silicon particles are reacted with hydrogen chloride in a fluidized bed reactor, wherein the silicon particles used are a silicon dust which is obtained as a waste product in the preparation of defined silicon particle size fractions from lump-form silicon and the silicon dust is introduced directly into the reactor.

Abstract: Provided is an apparatus for preparing silanes of the general formula HnSiCU n where n=1, 2, 3 and/or 4 by dismutation of a chlorinated silane in the presence of a catalyst, wherein the apparatus includes: a distillation column having a column bottom, a column top, at least one feed inlet, a plurality of product offtakes, and a chimney tray; and a side reactor containing a catalyst bed having an upper edge, the side reactor being connected to the distillation column via at least three pipes including a first pipe, a second pipe, and a third pipe.

Abstract: A process for reducing waste and increasing yield of chlorosilane monomers is performed by cracking polychlorosiloxane and polychlorosilane by-products generated during production of trichlorosilane useful for the manufacture of polycrystalline silicon.

Abstract: A process of converting a tetrahalosilane into a trihalosilane is provided that includes: diluting the tetrahalosilane with hydrogen (H2) to form a mixture; and passing the mixture through a bed of heated oxide particles to convert the tetrahalosilane into the trihalosilane.

Abstract: A closed loop bromosilane process is provided to provide semiconductor grade silicon through the thermal decomposition of tribromosilane. The resulting silicon tetrabromide byproduct from this thermal decomposition is recycled in a silicon tetrabromide converter to produce converted tribromosilane.

Abstract: When a disproportionated chlorosilane is to be produced by causing a starting material chlorosilane liquid to flow through a catalyst-packed layer which is packed with a weakly basic anion exchange resin as a disproportionation reaction catalyst to carry out a disproportionation reaction, before the disproportionation reaction is carried out, the disproportionation reaction catalyst is brought into contact with a processing gas obtained by diluting a chlorosilane with an inert gas to prevent the deterioration of the disproportionation reaction catalyst at the start of the reaction so as to carry out the disproportionation of the chlorosilane efficiently.

Abstract: The present invention relates to a device, to the use thereof, and to a method for the substantially energy-independent continuous production of chlorosilanes, particularly for the production of trichlorosilane as an intermediate product for yielding high-purity silicon.

Abstract: A method for producing polycrystalline silicon, including: reacting trichlorosilane and hydrogen to produce silicon and a remainder including monosilanes (formula: SiHnCl4-n, wherein n is 0 to 4) containing silicon tetrachloride, and a polymer including at least trisilanes or tetrasilanes; and supplying the remainder and hydrogen to a conversion reactor and heating at a temperature within the range of 600 to 1,400° C. to convert silicon tetrachloride into trichlorosilane and the polymer into monosilanes.

Abstract: The present invention relates to a method for producing trichlorosilane. In this method for producing trichlorosilane, first, silicon tetrachloride and hydrogen are subjected to a conversion reaction at a temperature of equal to or higher than 1000° C. and equal to or lower than 1900° C., to produce a reaction gas containing trichlorosilane, dichlorosilylene, hydrogen chloride and high-order silane compounds, and then the reaction gas discharged from the conversion furnace is cooled to 600° C. or higher within 0.01 seconds from the initiation of cooling and to 500° C. or lower within 2 seconds. Subsequently, the reaction gas is maintained in a temperature range of equal to or higher than 500° C. and equal to or lower than 950° C. for a time period of equal to or longer than 0.01 seconds and equal to or shorter than 5 seconds. The reaction gas is further cooled to below 500° C.

Abstract: An apparatus for producing trichlorosilane, including: a reaction vessel that has a substantially cylindrical wall body, a top plate, and a bottom plate, where a reaction product gas is produced from a raw gas supplied to the reaction vessel through a gas introducing passage provided to the lower section of the cylindrical wall body; and a plurality of heaters that are disposed inside the reaction vessel to heat the raw gas, wherein each of the heaters has a heating element that is elongated in a vertical direction and generates heat by electrification, and a mount that is fixed to the bottom plate and supports the heating element; a flange is provided to intermediate height of the heating element such that the flange is arranged upper than the gas introducing passage and is elongated in horizontal direction; and a passage of the raw gas formed between adjacent heaters is narrowed by the flange.

Abstract: In a process for the hydrogenation of chlorosilanes, a gas mixture of a chlorosilane gas to be hydrogenated and hydrogen gas is heated in a reactor to temperatures in the range between 500° C. and 1800° C. The chlorosilane gas is thereby at least partially hydrogenated. The reactor is heated by way of at least one flame from a fire box surrounding the reactor for the purpose of heating the gas mixture.

Abstract: The invention relates to a method for removing titanium compounds from hexachlorodisilane, wherein hexachloro-disilane is treated with an organic compound (V) which contains the structural units ?C—S— or ?C—O—.

Abstract: The invention relates to a method for producing neopentasilanes of the general formula (1) Si(SiR3)4 (1), wherein silicon compounds of the general formula (2) R3Si—(Si—)xSiR3 (2), wherein R is selected from H, Cl, Br, and I and x stands for a nonnegative integer up to 5, are reacted in the presence of ether compounds (E).

Abstract: The invention relates to a method for the catalytic hydrogenation of halogenated silanes or halogenated germanes, according to which halogenated monosilanes, oligosilanes or polysilanes, or monogermanes, oligogermanes or polygermanes, are hydrogenated or partially hydrogenated with hydrogenated Lewis acid-base pairs, and the partially halogenated Lewis acid base pairs can be rehydrogenated, especially with further addition of H2 and the heterolysis thereof on the Lewis acid-base pairs, releasing hydrogen halide.

Abstract: An object of the present invention is to provide more inexpensive high purity crystalline silicon which can satisfy not only a quality required to a raw material of silicon for a solar cell but also a part of a quality required to silicon for an up-to-date semiconductor and a production process for the same and provide high purity silicon tetrachloride used for production of high purity crystalline silicon and a production process for the same. The high purity crystalline silicon of the present invention has a boron content of 0.015 ppmw or less and a zinc content of 50 to 1000 ppbw. The production process for high purity crystalline silicon according to the present invention is characterized by that a silicon tetrachloride gas and a zinc gas are supplied to a vertical reactor to react them at 800 to 1200° C.

Abstract: A semi-continuous process for producing organohalosilanes or halosilanes in a fluidised bed reactor, from silicon-containing contact mass, comprising removing silicon-containing contact mass that has been used in said reactor by: (i) elutriation in an unreacted organohalide or hydrogen halide stream and/or an organohalosilane or halosilane product stream and (ii) direct removal using gravitational or pressure differential methods and returning removed silicon-containing contact mass to the fluidised bed reactor and/or fresh silicon-containing contact mass. When used for producing organohalosilanes (e.g. alkylhalosilanes) the silicon-containing contact mass may contain catalysts and promoters in addition to silicon.

Abstract: Fluid bed granulation process comprising the step of cooling the granules in a cooling fluid bed (F2). At least part of the fluidizing air coming out from said cooling fluid bed (F2) is fed into the granulation fluid bed (F1).

Abstract: The present invention relates to a halogenated polysilane as a pure compound or a mixture of compounds each having at least one direct Si—Si bond, whose substituents consist exclusively of halogen or of halogen and hydrogen and in the composition of which the atomic ratio of substituent to silicon is at least 1:1.

Abstract: An apparatus for producing trichlorosilane, including: a reaction vessel in which a supply gas containing silicon tetrachloride and hydrogen is supplied to an internal reaction passageway to produce a reaction product gas containing trichlorosilane and hydrogen chloride; a heating mechanism having a heater that heats the interior of the reaction vessel; a gas supply section that supplies the supply gas in the reaction vessel; and a gas discharge section that discharges the reaction product gas from the reaction vessel to the outside, wherein the heater is disposed in the center of the reaction vessel, and the reaction passageway is disposed in the periphery of the heater.

Abstract: An object of the present invention is to provide a method for purification of silicon tetrachloride which solves the problems of separating and removing organic chlorosilanes by distillation or adsorption. The method for purification of silicon tetrachloride comprises the steps of (1) bringing a mixed gas including a silicon tetrachloride gas and an oxygen-containing gas into contact with a catalyst layer which is controlled to a temperature of 200 to 450° C. and which includes at least one selected from the group consisting of activated carbon and metal-supporting activated carbon, and (2) cooling the mixed gas after brought into contact to separate and recover liquid silicon tetrachloride.

Abstract: Disclosed is a process for producing a fluoride gas that can produces fluoride gases such as BF3, SiF4, GeF4, PF5 or AsF5 at a reduced production cost in a simple manner. The process is characterized in that a compound containing an atom, which, together with a fluorine atom, can form a polyatomic ion, is added to a hydrogen fluoride solution to produce the polyatomic ion in a hydrogen fluoride solution and to evolve a fluoride gas comprising the fluorine atom and the atom that, together with the fluorine atom, can form a polyatomic ion.

Abstract: A fluidized bed reactor (FBR) for producing chlorosilane mixture containing trichlorosilane (TCS) concentration at least 50% from hydrogenation of special metallurgical silicon (MGSI), which has manganese concentration less than 35 ppmw, silicon tetra chloride (STC), and the method of producing high TCS content chlorosilane mixture is disclosed. The FBR according to current application has an expanded over head zone, whose inner diameter is at least twice bigger than that of the inner diameter of the lower straight zone. Temperature of the reaction bed is controlled between 300° C. to 600° C. within the mean temperature deviation of ±5 C. Reaction pressure is maintained between 3 to 10 bar. Retention time of the STC and hydrogen in the reaction bed is controlled to be shorter than 30 seconds. The FBR of the current application enables higher STY (space time yield; production rate/volume of the reactor) of TCS compared to any other current commercial STC cold converter, which hydrogenise STC to TCS.

Abstract: The present invention is directed to systems and methods of synthesizing trichlorosilane. The disclosed systems and methods can involve increasing the concentration of the solids in the slurry to recover or separate the volatilized metal salts and reduce the obstructions created by the solidification of the metal salts in downstream operations of the during trichlorosilane synthesis. Rather than heating to raise the temperature to vaporize chlorosilane compounds, and subsequently condensing the volatilized chlorosilane compounds, the present invention can involve increasing the solids concentration in the slurry stream by utilizing a non-condensable gas, such as hydrogen, to volatilize the chlorosilane components, which can consequently promote evaporative conditions that can reduce the slurry temperature. The lower slurry temperature results in a lower volatility of the metal salts, which reduces the likelihood of carryover to downstream unit operations.

Abstract: The invention relates to a method for reducing the content in elements of the third main group of the periodic system, especially in boron- and aluminum-containing compounds of technically pure halosilanes for producing high-purity halosilanes, especially high-purity chlorosilanes. The invention further relates to an installation for carrying out said method.

Abstract: Embodiments of the invention provide a system and process for recovering useful compounds from a byproduct composition produced in a silicon tetrafluoride production process.

Abstract: The present disclosure relates to processes and systems for purifying technical grade trichlorosilane and/or technical grade silicon tetrachloride into electronic grade trichlorosilane and/or electronic grade silicon tetrachloride.

Abstract: Silicon-containing products, such as silicon, silicon carbide and silicon nitride, containing less than 0.01 weight percent total mineral impurities and selectively determined carbon-to-silicon ratios. The products are derived from plant matter, such as rice hulls and rice straw, containing at least three weight percent silica. Methods are provided for making such high purity silicon-containing products by leaching silica-containing plant matter with aqueous sulfuric acid under controlled temperatures, pressures and reaction times to remove minerals and metals while adjusting the mole ratio of fixed carbon to silica, and then thermally treating under controlled conditions to produce the desired product.