Abstract: A process for the synthesis of a high purity corrosive gas generated by decomposition of a precursor solid at high temperature deploys a dry vacuum pump and a compressor in series so that the corrosive gas is pressured as it fills storage containers.

Abstract: This method for manufacturing trichlorosilane, includes: reacting metallurgical grade silicon with silicon tetrachloride and hydrogen so as to obtain a reaction gas; condensing the reaction gas so as to obtain a condensate; and distilling the condensate using a distillation system including a first distillation column and a secondary distillation column so as to refine trichlorosilane. While maintaining the condensate in a high temperature state so that a concentration of aluminum chloride in the condensate becomes in a range of a saturation solubility or less, the condensate flows to the first distillation column. A liquid distilled in the first distillation column is distilled by the secondary distillation column so as to refine trichlorosilane. A liquid in which aluminum chloride is concentrated is extracted from a bottom portion of the first distillation column. The extracted liquid is concentrated and dried, and then aluminum chloride is exhausted.

Abstract: Disclosed is a method for producing chloropolysilane by which the yield of a fluid reaction to produce the chloropolysilane is improved while blockage in a reactor caused by attachment of higher-order silicon chloride as a by-product is prevented. In producing the chloropolysilane by reacting fluidized silicon particles or silicon alloy particles with a chlorine gas, an outlet filter is provided, upstream from a product outlet that releases a reaction product, above the area in which the silicon particles or silicon alloy particles are fluidized inside a reaction tank. The outlet filter prevents fine particles blown up by fluidization from flowing out of the reaction tank through the product outlet. A temperature of the outlet filter is set in a range of 210 to 350° C.

Abstract: Granular polycrystalline silicon is disclosed, which has a convexity of 0.850-1.000 and a chlorine content of 10-40 ppmw. Also disclosed is a process for producing granular polycrystalline silicon in a fluidized bed reactor, which includes: (a) fluidization of silicon seed particles by gas flow in a fluidized bed heated by a heating apparatus, (b) addition of a silicon- and halogen-containing reaction gas resulting in pyrolytic deposition of elemental silicon on heated seed particle surfaces, (c) forming the granular polycrystalline silicon, (d) removing from the reactor particles and offgas containing hydrogen halide, and (e) metered addition of fresh seed particles. The hydrogen halide concentration in the offgas is determined as the controlled variable. The rate of metered addition of fresh seed particles and heating output of the heating apparatus are controlled as manipulated variables to keep the hydrogen halide concentration in the offgas within an above-defined range during operation.

Abstract: The invention relates to a process for producing a product gas mixture containing hydrogen-containing chlorosilanes within an integrated process by hydrogenating integrated process by-product silicon tetrachloride and organochlorosilane, more particularly methyltrichlorosilane, with hydrogen in a pressurized hydrogenation reactor comprising one or more reaction spaces each consisting of a reactor tube of gastight ceramic material, wherein the product gas mixture is worked up and at least a portion of at least one product of the product gas mixture is used as starting material for the hydrogenation or as starting material for some other process within the integrated process. The invention further relates to an integrated system useful for practising the integrated process.

Abstract: A multi-stage fluidized bed synthesizer and process for synthesizing trichlorosilane wherein silicon particles can be fed into one of multiple intercommunicating fluidizing zones in a fluidized bed reactor supplied with fluidizing gas comprising hydrogen chloride. The fluidizing zones can be disposed laterally adjacent one to another, for example side-by-side, or in a horizontal line. Useful embodiments include: feeding the fluidizing gas at different rates and/or compositions to the different fluidizing zones; filtration apparatus to filter the gaseous product and return silicon particles to the reactor and cooling systems for cooling the fluidized bed and the gas volumes above the fluidized beds, if present.

Abstract: The invention relates to a method for producing dimeric and/or trimeric silicon compounds, in particular silicon halogen compounds. The claimed method is also suitable for producing corresponding germanium compounds. The invention also relates to a device for carrying out said method to the use of the produced silicon compounds.

Abstract: A method of preparing a trihalosilane comprising the separate and consecutive steps of (i) contacting a copper catalyst with hydrogen gas and a silicon tetrahalide at a temperature of from 500 to 1400° C. to form a silicon-containing copper catalyst comprising at least 0.1% (w/w) of silicon, wherein the copper catalyst comprises a metal selected from copper and a mixture comprising copper and at least one element selected from gold, magnesium, and platinum; and (ii) contacting the silicon-containing copper catalyst with a hydrogen halide at a temperature of from 100 to 600° C. to form a trihalosilane.

Abstract: The invention relates to a method for producing hexachlorodisilane or Ge2CI6, which is characterized in that, in a gas containing SiCI4 or GeCI4, a) a non-thermal plasma is generated by means of an alternating voltage of the frequency f, and wherein at least one electromagnetic pulse having the repetition rate g is coupled into the plasma, the voltage component of which pulse has an edge steepness in the rising edge of 10 V ns-1 to 1 kV ns-1 and a pulse width b of 500 ns to 100 ?s, wherein a liquid phase is obtained, and b) pure hexachlorodisilane or Ge2Cl6 is obtained from the liquid phase.

Abstract: The invention relates to a process for preparing trichlorosilane, characterized in that hydrogen and at least one organic chlorosilane are reacted in a reactor which is operated under superatmospheric pressure and comprises one or more reactor tubes which consist of a gastight ceramic material.

Abstract: The invention relates to a process for converting silicon tetrachloride (STC) to trichlorosilane (TCS), by introducing reactant gas containing STC and hydrogen into a reaction zone of a reactor in which the temperature is 1000-1600° C., wherein the reaction zone is heated by a heater located outside the reaction zone and the product gas containing TCS which forms is then cooled, with the proviso that it is cooled to a temperature of 700-900° C. within 0.1-35 ms, wherein the reactant gas is heated by the product gas by means of a heat exchanger working in countercurrent, wherein reactor and heat exchanger form a single, gas-tight component, wherein the component includes one or more ceramic materials selected from the group consisting of silicon carbide, silicon nitride, graphite, SiC-coated graphite and quartz glass.

Abstract: The invention relates to a process for preparing chlorosilanes of the general formula H4-nSiCln with n=1, 2, 3, and/or 4, the process being characterized in that silicon in a silicon bed is reacted with Cl2 or HCl and with at least one silicon-containing compound in a reactor.

Abstract: Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon.

Abstract: The present invention relates generally to production of a fluoride gas and equivalents thereof, and fluorine-doped sodium silicate glass, glass ceramics, vitro ceramics and equivalents thereof. In one embodiment, the method includes providing a salt and an oxide in a reactor, heating the reactor to produce a vapor and the vitro ceramic and removing the vapor.

Abstract: The invention provides a process for endothermic gas phase reaction in a reactor, in which reactant gases are introduced into the reactor via a gas inlet apparatus and distributed homogeneously into a heating zone by means of a gas distribution apparatus, wherein the reactant gases are heated in the heating zone to a mean temperature of 500-1500° C. by means of heating elements and then conducted into a reaction zone, the reactant gases reacting in the reaction zone to give a product gas which is conducted out of the reactor via a gas outlet apparatus. Further subject matter of the invention relates to a process for endothermic gas phase reaction in a reactor, wherein the heating of the heating elements is controlled by temperature measurements in the reaction zone, at least two temperature sensors being present in the reaction zone for this purpose, and reactor for performance of the process.

Abstract: The invention provides a process for hydrogenating silicon tetrachloride in a reactor, in which reactant gas containing hydrogen and silicon tetrachloride is heated to a temperature of greater than 900° C. at a pressure between 4 and 15 bar, first by means of at least one heat exchanger made from graphite and then by means of at least one heating element made from SiC-coated graphite, the temperature of the heating elements being between 1150° C. and 1250° C., wherein the reactant gas includes at least one boron compound selected from the group consisting of diborane, higher boranes, boron-halogen compounds and boron-silyl compounds, the sum of the concentrations of all boron compounds being greater than 1 ppmv based on the reactant gas stream.

Abstract: A method of making a trihalosilane comprising contacting an organotrihalosilane according to the formula RS1X3 (I), wherein R is C1-C10 hydrocarbyl and each X independently is halo, with hydrogen, wherein the mole ratio of the organotrihalosilane to hydrogen is from 0.009:1 to 1:2300, in the presence of a catalyst comprising a metal selected from (i) Re, (ii) a mixture comprising Re and at least one element selected from Pd, Ru, Mn, Cu, and Rh, (iii) a mixture comprising Ir and at least one element selected from Pd and Rh, (iv) Mn, (v) a mixture comprising Mn and Rh, (vi) Ag, (vii) Mg, and (viii) Rh at from 300 to 800° C. to form a trihalosilane.

Abstract: The invention relates to a process for the catalytic hydrodehalogenation of SiCl4 to form HSiCl3, which comprises bringing a gaseous feed mixture comprising hydrogen and silicon tetrachloride into direct contact with at least one heating element of a resistance heating device, with the heating element being composed of a metal or a metal alloy and being heated to carry out the reaction.

Abstract: The present disclosure relates to processes and systems for purifying technical grade trichlorosilane and/or technical grade silicon tetrachloride into electronic grade trichlorosilane and/or electronic grade silicon tetrachloride.

Abstract: The invention relates to the use of a ceramic tube composed of silicon carbide variants in processes for converting chlorosilanes, wherein the tube has a flange or a flare at one end and is closed at the other end.

Abstract: The invention provides for the use of a particular burner design to heat reactors for conversion of chlorosilanes, wherein the burner has a jet tube and the jet tube surrounds the flame and the flame tube in a gastight manner, as a result of which the combustion air, the gaseous and/or liquid fuels, and also the flue gases cannot get into the reaction furnace space. The advantage is the complete separation of the flue gas from the actual interior of the reaction furnace, which prevents critical interactions between flue gas moisture and chlorosilanes in the case of fracture of the arrangement accommodating the chlorosilanes. This in turn makes it possible to use gaseous or liquid fuels to heat such a reaction furnace. Excessive local input of heat as a result of direct flame contact is prevented; the heat input is homogenized.

Abstract: An apparatus for producing trichlorosilane, including: a reaction vessel that has a substantially cylindrical wall body, a top plate, and a bottom plate, where a reaction product gas is produced from a raw gas supplied to the reaction vessel through a gas introducing passage provided to the lower section of the cylindrical wall body; and a plurality of heaters that are disposed inside the reaction vessel to heat the raw gas, wherein each of the heaters has a heating element that is elongated in a vertical direction and generates heat by electrification, and a mount that is fixed to the bottom plate and supports the heating element; a flange is provided to intermediate height of the heating element such that the flange is arranged upper than the gas introducing passage and is elongated in horizontal direction; and a passage of the raw gas formed between adjacent heaters is narrowed by the flange.

Abstract: An object of the present invention is to provide more inexpensive high purity crystalline silicon which can satisfy not only a quality required to a raw material of silicon for a solar cell but also a part of a quality required to silicon for an up-to-date semiconductor and a production process for the same and provide high purity silicon tetrachloride used for production of high purity crystalline silicon and a production process for the same. The high purity crystalline silicon of the present invention has a boron content of 0.015 ppmw or less and a zinc content of 50 to 1000 ppbw. The production process for high purity crystalline silicon according to the present invention is characterized by that a silicon tetrachloride gas and a zinc gas are supplied to a vertical reactor to react them at 800 to 1200° C.

Abstract: A solar energy utilization device wherein the surface of the incident light side of the transparent base material 1 is covered by water-and-oil-shedding transparent fine particles 5 being bound and fixed to the surface. A method for manufacturing a solar energy utilization device comprising process A of manufacturing reactive transparent fine particles 9 with the first functional group at one end; process B of manufacturing reactive transparent base material 4 with the second functional group at one end forming a covalent bond with the first functional group; process C of manufacturing transparent base material 10 by reacting the reactive transparent fine particles 9 with the reactive transparent base material 4 for binding and fixing the reactive transparent fine particles 9 to the surface; and process D of forming water-and-oil-shedding coating 16 on the surface of the transparent fine particles 5 being bound and fixed to the surface of the transparent base material 10.

Abstract: The invention provides a process and apparatus for preparing chlorosilane from the reaction of very finely divided ultra-pure silicon with hydrogen chloride, the very finely divided ultra-pure silicon being fed into a solid bed of metallurgical silicon, the feed line for ultra-pure silicon and the fixed bed having a certain minimum temperature.

Abstract: The present invention relates to a process for preparing trichlorosilane and optionally, if required, HCDS and OCTS, by a) in a first step, allowing silicon tetrachloride and silicon to react at a temperature of >800 to 1450° C.

Abstract: Heteroatom doped silane compounds, e.g., phosphorus-containing silane compounds, are provided. The application also provides methods of producing the heteroatom doped silane compounds from halogen substituted silanes via reaction with a heteroatom-containing nucleophile.

Abstract: The invention relates to a process for preparing monochlorosilane by reaction of monosilane and dichlorosilane in the presence of a catalyst. In the process of the invention, monochlorosilane is formed by comproportionation of monosilane and dichlorosilane. The invention further relates to the use of the monochlorosilane produced and also a plant for carrying out the process.

Abstract: A method for treating substrates to render them hydrophobic includes penetrating the substrate with a halosilane vapor.

Abstract: The invention relates to a process for preparing monomeric and/or dimeric halogen- and/or hydrogen-containing silicon compounds from oligomeric inorganic silanes having three or more directly covalently interconnected silicon atoms substituted by substituents selected from halogen, hydrogen and/or oxygen by reacting the oligomeric silane over a nitrogen-containing catalyst in the presence of hydrogen halide.

Abstract: A process for hydrogenating chlorosilanes in a reactor, wherein at least two reactant gas streams are introduced separately from one another into a reaction zone, wherein the first reactant gas stream comprising silicon tetrachloride is conducted via a first heat exchanger unit in which it is heated and is then conducted through a heating unit which heats it to a first temperature before the first reactant gas stream reaches the reaction zone, and wherein the second reactant gas stream comprising hydrogen is heated by a second heat exchanger unit to a second temperature, wherein the first temperature is greater than the second temperature, and then introduced into the reaction zone, such that the mixing temperature of the two reactant gas streams in the reaction zone is between 850° C. and 1300° C.

Abstract: There is provided a hydrogen chrolide gas ejecting nozzle 1 used in a reaction apparatus for producing trichlorosilane in which metal silicon powder is reacted with hydrogen chloride gas to generate trichlorosilane. The member is provided with a shaft portion extending in the longitudinal direction and a head portion that is provided on an end of the shaft portion and extends in a direction intersecting the longitudinal direction of the shaft portion. A supply hole extending in the longitudinal direction is formed in the shaft portion, a plurality of ejection holes are formed in the head portion, and each of the ejection holes is communicatively connected to the supply hole and opened on the outer surface of the head portion toward a direction intersecting the direction to which the supply hole extends.

Abstract: A reaction apparatus for producing trichlorosilane in which metal silicon powder M is reacted with hydrogen chloride gas, thus generating trichlorosilane, includes: an apparatus body into which the metal silicon powder is supplied; and an ejection port for ejecting the hydrogen chloride gas into the apparatus body from the bottom part of the apparatus body, wherein a plurality of holed pieces having a through hole penetrating in the thickness direction and a plurality of pellets interposed between these holed pieces are stacked in a mixed state on the upper side of the ejection port.

Abstract: Trichlorosilane production is increased while simultaneously lowering environmental burden due to destruction and disposition of high boilers by feeding high boilers from trichlorosilane production or from polycrystalline silicon production into a fluidized bed for production of trichlorosilane from metallic silicon and hydrogen chloride.

Abstract: Ultra high purity hexachlorodisilane is prepared from hexachlorodisilane-containing mixtures from numerous sources by distillation wherein water is present at less than 10 ppbw.

Abstract: The present invention relates to a process for preparing hydridosilanes from halosilanes, in which a) i) at least one halosilane of the generic formula SinX2n+2 (where n?3 and X=F, Cl, Br and/or I) and ii) at least one catalyst are converted to form a mixture comprising at least one halosilane of the generic formula SimX2m+2 (where m>n and X=F, Cl, Br and/or I) and SiX4 (where X=F, Cl, Br and/or I), and b) the at least one halosilane of the generic formula SimX2m+2 is hydrogenated to form a hydridosilane of the generic formula SimH2m+2, the hydridosilane of the generic formula SimH2m+2 is separated from partially halogenated hydridosilanes of the general formula SimH(2m+2?y)Xy (where 1<y<2m+1), and the separated partially halogenated hydridosilanes of the general formula SimH(2m+2?y)Xy (where 1<y<2m+1) are hydrogenated again.

Abstract: The invention relates to a process for preparing higher halosilanes by disproportionation of lower halosilanes. The invention further relates to a process for preparing higher hydridosilanes from the higher halosilanes prepared by disproportionation. The invention further relates to mixtures containing at least one higher halosilane or at least one higher hydridosilane prepared by the process described. Finally, the invention relates to the use of such a mixture containing at least one higher hydridosilane for producing electronic or optoelectronic component layers or for producing silicon-containing layers.

Abstract: A method of making a trihalosilane comprising contacting an organotrihalosilane according to the formula RS1X3 (I), wherein R is C1-C10 hydrocarbyl and each X independently is halo, with hydrogen, wherein the mole ratio of the organotrihalosilane to hydrogen is from 0.009:1 to 1:2300, in the presence of a catalyst comprising a metal selected from (i) Re, (ii) a mixture comprising Re and at least one element selected from Pd, Ru, Mn, Cu, and Rh, (iii) a mixture comprising Ir and at least one element selected from Pd and Rh, (iv) Mn, (v) a mixture comprising Mn and Rh, (vi) Ag, (vii) Mg, and (viii) Rh at from 300 to 800° C. to form a trihalosilane.

Abstract: There is provided a method for a purification of trichlorosilane, the method including: performing a pretreatment for separating a chlorosilane mixture from reaction products of a trichlorosilane production reaction; performing a first purification for separating the chlorosilane mixture into a first top stream and a first bottom stream; performing a second purification for separating the first top stream into a second top stream and a second bottom stream; and performing a third purification for separating the second bottom stream into a third top stream and a third bottom stream, wherein the performing of the third purification is carried out under pressure conditions higher than those of the performing of the second purification, and a heat exchange is generated between the second bottom stream and the third top stream.

Abstract: An apparatus for producing trichlorosilane includes: a decomposing furnace, a heating unit heating the inside of the decomposing furnace, a raw material supplying tube for guiding polymer and hydrogen chloride to be guided to the inner bottom portion of the decomposing furnace, and a gas discharge tube for discharging reaction gas from the top of the reaction chamber provided between the outer peripheral surface of the raw material supplying tube and the inner peripheral surface of the decomposing furnace, a fin, which guides a fluid mixture of the polymer and the hydrogen chloride supplied from the lower end opening of the raw material supplying tube to be agitated and rise upward in the reaction chamber, and is formed integrally with at least one of the outer peripheral surface of the raw material supplying tube and the inner peripheral surface of the decomposing furnace.

Abstract: Methods for producing silicon tetrafluoride by acid digestion of fluoride salts of alkali metal or alkaline earth metal and aluminum, optionally, in the presence of a source of silicon; methods for producing silane that include acid digestion of by-products of silane production to produce silicon tetrafluoride.

Abstract: Shell and tube heat exchangers that include a baffle arrangement that improves the temperature profile and flow pattern throughout the exchanger and/or that are integral with a reaction vessel are disclosed. Methods for using the exchangers including methods that involve use of the exchanger and a reaction vessel to produce a reaction product gas containing trichlorosilane are also disclosed.

Abstract: The invention relates to a method for converting silicon tetrachloride by means of hydrogen to form trichlorosilane in a modified hydrodechlorination reactor. The invention further relates to a the use of such a modified hydrodechlorination reactor as an integrated component of a system for producing trichlorosilane from metallurgical silicon.

Abstract: The invention relates to an improved method for converting silicon tetrachloride having hydrogen in a hydrodechlorination reactor comprising a catalyst. The invention further relates to a catalytic system for such a hydrodechlorination reactor.

Abstract: Polysilanes of medium chain length as pure compounds or a mixture of compounds, each having at least one direct Si—Si bond, the substituents of the polysilanes consisting exclusively of halogen and/or hydrogen, the medium chain length n thereof being greater than 3 and smaller than 50, and the atomic ratio of substituent:silicon in the composition thereof being at least 1:1.

Abstract: The invention relates to a method for producing neopentasilanes of the general formula (1) Si(SiR3)4 (1), wherein silicon compounds of the general formula (2) R3Si— (SiR2—)xSiR3 (2), where R is selected from Cl, Br, and I, and x is a non-negative whole number up to 5, are converted in the presence of catalytically active compounds (K), wherein the separating of the tetrahalogen silane formed thereby takes place by distilling out in the presence of a compound (L) that is liquid at room temperature having a higher boiling point than the released tetrahalogen silane.

Abstract: An apparatus and a method for producing trichlorosilane are provided, which effectively suppresses the reaction converting trichlorosilane to tetrachlorosilane and the formation of polymers, thereby achieving a high recovery ratio of trichlorosilane. The apparatus for producing trichlorosilane includes: a converter reactor for converting a raw material gas containing tetrachlorosilane and hydrogen into a reaction product gas; a cooler for cooling the reaction product gas fed from the converter reactor; and a plurality of provided in the cooler for spraying cooling liquids. Average droplet diameters of the cooling liquids sprayed from a plurality of the nozzles are different from each other, and a cooling liquids volume sprayed from each of the plurality of nozzles is able to be individually adjusted.

Abstract: There is provided a hydrogen chrolide gas ejecting nozzle 1 used in a reaction apparatus for producing trichlorosilane in which metal silicon powder is reacted with hydrogen chloride gas to generate trichlorosilane. The member is provided with a shaft portion extending in the longitudinal direction and a head portion that is provided on an end of the shaft portion and extends in a direction intersecting the longitudinal direction of the shaft portion. A supply hole extending in the longitudinal direction is formed in the shaft portion, a plurality of ejection holes are formed in the head portion, and each of the ejection holes is communicatively connected to the supply hole and opened on the outer surface of the head portion toward a direction intersecting the direction to which the supply hole extends.

Abstract: Dry dust removal method in organic chlorosilane production is provided, in which the detailed steps are as follows: delivering high-temperature flue gas (a) from fluidized bed reactor (I) into inorganic film cross-flow filter (E) to remove dust for the first time; delivering the concentrated dust gas (c) trapped by inorganic film cross-flow filter (II) into bag filter (III) to remove dust for the second time; returning the gas mixture (f) of passing through bag filter (EI) to the air intake of inorganic film cross-flow filter (II); condensing the residual clean gas (b) from the osmotic side of inorganic film in condenser (A), and then rectifying in rectifying column (B) to separate the products of chloromethane (g) and methyl chlorosilane (h) to obtain the product of methyl chlorosilane (h); returning chloromethane to fluidized bed reactor to take part in reaction; retreating the dust (e) trapped by inorganic film cross-flow filter and bag filter, and then returning it to fluidized bed reactor (I) to take par

Abstract: The method comprises at least three steps of a hydrogenation step (101) and/or a chlorination step (102), an impurity conversion step (103), and a purification step (104). In the impurity conversion step (103), an aldehyde compound represented by the general formula Ar—R—CHO (Ar; denotes a substituted or unsubstituted aryl group, R; denotes an organic group having two or more carbon atoms) is added to convert donor impurities and acceptor impurities contained in a chlorosilane distillate to a high-boiling substance. The chlorosilane distillate after the donor impurities and acceptor impurities have been converted to a high-boiling substance is sent to the purification step (104). In the purification step (104), high purity chlorosilanes from which the donor impurities and acceptor impurities have been thoroughly removed are obtained by using a distillation column or the like, where the high purity chlorosilanes are recovered outside the system from the top of the column.