Abstract: The invention relates to a process for the catalytic hydrodehalogenation of SiCl4 to HSiCl3 in the presence of hydrogen, in which at least one metal or metal salt selected from among the elements of main group 2 of the Periodic Table of the Elements (PTE) is used as catalyst at a temperature in the range from 300 to 1 000° C. In particular, the catalyst is a metal or metal salt which forms stable metal chlorides under these conditions.

Abstract: Trichlorosilane production is increased while simultaneously lowering environmental burden due to destruction and disposition of high boilers by feeding high boilers from trichlorosilane production or from polycrystalline silicon production into a fluidized bed for production of trichlorosilane from metallic silicon and hydrogen chloride.

Abstract: The present invention relates to a method for the production of trichlorosilane by reaction of silicon with HCl gas at a temperature between 250 and 1100° C., and an absolute pressure of 0.5-30 atm in a fluidized bed reactor, in a stirred bed reactor or a solid bed reactor, where the silicon supplied to the reactor contains between 30 and 10.000 ppm chromium. The invention further relates to silicon for use in the production of trichlorosilane by reaction of silicon with HCl gas, containing between 30 and 10.000 ppm 10 chromium, the remaining except for normal impurities being silicon.

Abstract: Efficient production of trichlorosilane from tetrachlorosilane and hydrogen is effected by reaction at high temperatures over short residence times followed by rapidly cooling the product mixture in a heat exchanger, recovered heat being employed to heat the reactant gases.

Abstract: The present invention provides a catalyst that may be used to facilitate the formation of dimethylchlorosilanes. A catalyst in which copper oxide and zinc oxide are in intimate contact and form agglomerated particles allows for the increased selectively of the production of dimethylchlorosilanes.

Abstract: The invention relates to a method of producing silane or hydrochlorosilanes by disproportionation of a higher chlorinated hydrochlorosilane or a mixture of said hydrochlorosilanes in the presence of a catalyst. Before the catalyst is used, it is a) washed with hyper-pure water in one or several steps; b) transferred in the water-moist state to the reactor in which the disproportionation is to proceed; c) treated in the reactor with boiling methanol or rinsed with anhydrous methanol; and d) the methanol is removed from the catalyst by evacuation and/or stripping with inert gas. The invention further relates to a method for treating disproportionation catalysts.

Abstract: A method of forming crystalline or polycrystalline layers includes providing a substrate and a patterning over the substrate. The method also includes providing nucleation material and forming the crystalline layer over the nucleation material. The crystalline material disposed over the substrate may be monocrystalline or polycrystalline.

Abstract: Chlorosilanes are continuously removed from a gas stream in an apparatus in which the gas stream is treated in a first stage with water vapor in the gas phase, and in a second stage with a liquid, aqueous phase.

Abstract: The invention concerns a silicon powder for making alkyl- or aryl-halogenosilanes, with particle-size distribution less than 350 ?m, and containing less than 3% and preferably less than 2% of particles having a size less than 5 ?m. Said powder enables to improve efficiency of synthesis reaction.

Abstract: A method for the production of inorganic aluminum substances and amorphous silica from aluminum oxide containing ores, comprising: (a) leaching of said ores with fluorosilicic acid to obtain aluminum fluosilicate solution; (b) filtering said leached solution from insoluble materials; and (c) washing said insoluble materials.

Abstract: Tetrafluorosilane is produced by a process comprising a step (1) of heating a hexafluorosilicate, a step (2-1) of reacting a tetrafluorosilane gas containing hexafluorodisiloxane produced in the step (1) with a fluorine gas, a step (2-2) of reacting a tetrafluorosilane gas containing hexafluorodisiloxane produced in the step (1) with a high valent metal fluoride, or a step (2-1) of reacting a tetrafluorosilane gas containing hexafluorodisiloxane produced in the step (1) with a fluorine gas and a step (2-3) of reacting a tetrafluorosilane gas produced in the step (2-1) with a high valent metal fluoride. Further, impurities in high-purity tetrafluorosilane are analyzed.

Abstract: The invention relates to a method for producing trichlorosilane by reacting silicon with hydrogen, silicon tetrachloride and, optionally, hydrogen chloride, whereby the silicon is provided in comminuted form, and the silicon is mixed with a catalyst during comminution.

Abstract: A process for preparing polycrystalline silicon comprising the steps of (A) reacting trichlorosilane with hydrogen thereby forming silicon and an effluent mixture comprising tetrachlorosilane and disilane described by formula HnCl6—nSi2 where n is a value of 0 to 6 and (B) co-feeding the effluent mixture and hydrogen to a reactor at a temperature within a range of about 600° C. to 1200° C. thereby effecting hydrogenation of the tetrachlorosilane and conversion of the disilane to monosilanes.

Abstract: Compositions and methods are disclosed which facilitate purification of oligomers and other compounds. The disclosed compositions are silyl compositions that can be directly coupled, or coupled through a linking group, to a compound of interest, preferably to an oligomer at the end of oligomer synthesis. The silicon atom includes between one and three sidechains that function as capture tags. In one embodiment, the capture tags are lipophilic, which allows a derivatized oligomer to be separated from failure sequences by reverse phase chromatography. In another embodiment, the capture tags are compounds with a known affinity for other compounds, which other compounds are preferably associated with a solid support to allow chromatographic separation. Examples include haptens, antibodies, and ligands. Biotin, which can bind to or interact with a streptavidin-bound solid support, is a preferred capture tag of this type.

Abstract: This invention relates to a continuous process for the preparation of silane by catalytic disproportionation of trichlorosilane in a reactive/distillative reaction zone having a catalyst bed of catalytically active solid.

Abstract: The invention provides a process for forming a low k fluorine and carbon-containing silicon oxide dielectric material by reacting with an oxidizing agent one or more silanes that include one or more organofluoro silanes selected from: (a) an organofluoro silane containing two silicon atoms linked by one oxygen atom; (b) an organofluoro silane containing two silicon atoms linked by one or more carbon atoms, where the one or more carbon atoms each are bonded to one or more fluorine atoms, or to one or more organofluoro moieties, or to a combination thereof; and (c) an organofluoro silane containing a silicon atom bonded to an oxygen atom. The invention also provides a process for forming a low k fluorine and carbon-containing silicon oxide dielectric material by reacting with an oxidizing agent one or more silanes that include one or more organofluoro silanes characterized by the presence of Si—O bonds.

Abstract: A process for producing hexachlorodisilane comprising, condensing an exhaust gas discharged from a reactor for producing polycrystalline silicon from a chlorosilane and hydrogen to separate the hydrogen, distilling the resultant condensate to separate the unreacted chlorosilane and by-product silicon tetrachloride, and then further distilling to recover hexachlorodisilane, wherein tetrachlorodisilane can be recovered together with the hexachlorodisilane, and the hexachlorodisilane and tetrachlorodisilane recovered have a far higher purity than the conventional ones produced from metallic silicon.

Abstract: Modified silica fillers are prepared by contacting silica with blends or mixtures containing diorganodihalosilanes and tetrahalosilanes in weight ratios of 1:0.1 to 1:2, respectively. While dialkyldichlorosilanes and tetrahalosilanes such as dimethyldichlorosilane and silicon tetrachloride, respectively, are most preferred, the blends or mixtures may also comprise compositions containing other silanes such as mercaptopropyltriethoxysilane.

Abstract: Tetrafluorosilane is produced by a process comprising a step (1) of heating a hexafluorosilicate, a step (2-1) of reacting a tetrafluorosilane gas containing hexafluorodisiloxane produced in the step (1) with a fluorine gas, a step (2-2) of reacting a tetrafluorosilane gas containing hexafluorodisiloxane produced in the step (1) with a highvalent metal fluoxide, or a step (2-1) of reacting a tetrafluorosilane gas containing hexafluorodisiloxane produced in the step (1) with a fluorine gas and a step (2-3) of reacting a tetrafluorosilane gas produced in the step (2-1) with a highvalent metal fluoride. Further, impurities in high-purity tetrafluorosilane are analyzed.

Abstract: A process for producing silicon tetrafluoride includes reacting at 250° C. or higher elemental silicon with hydrogen fluoride, thereby producing a gas product containing silicon tetrafluoride. This reaction can be conducted such that the gas product contains at least 0.02 volume % of the unreacted hydrogen fluoride. The process may further include bringing the gas product into contact with elemental nickel at a temperature of 600° C. or higher. Alternatively, the process may further include adding at least 0.1 volume % of hydrogen fluoride to the gas product to prepare a gas mixture; and bringing the gas mixture into contact with elemental nickel at a temperature of 400° C. or higher.

Abstract: The invention relates to a method for producing trichlorosilane, whereby silicon is reacted with hydrogen, silicon tetrachloride and optionally hydrogen chloride, said silicon containing iron in the form of homogeneously distributed iron silicide.

Abstract: The invention relates to a method for producing trichlorosilane by reacting silicon with silicon tetrachloride and hydrogen while adding hydrogen chloride, the residence time of the hydrogen chloride in the reaction chamber being less than the residence time of the silicon tetrachloride.

Abstract: The invention relates to a fluidized-bed reactor for the production of trichlorosilane by reacting silicon with silicon tetrachloride, hydrogen and optionally hydrogen chloride at a high pressure and high temperature. According to the invention, the fluidized-bed reactor, at least on the surface facing towards the reaction chamber, is made of a nickel-chrome-molybdenum-(NiCrMo)-alloy with a chrome proportion of at least 5 weight percent, an iron proportion of less than 4 weight percent and an additional proportion of 0-10 weight percent consisting of other alloy elements. The invention also relates to a method for producing trichlorosilane in said fluidized-bed reactor and to the use of said trichlorosilane.

Abstract: The invention relates to a method and a device for separating aluminium from chlorosilanes, in particular for separating aluminium trichloride from silicon tetrachloride or trichlorosilane or from mixtures of silicon tetrachloride or trichlorosilane. According to the invention, aluminium chloride is removed from the chlorosilanes silicon tetrachloride and trichlorosilane in a continuous process, without the addition of admixtures, to obtain a residual content of aluminium that is as low as required, by separating the aluminium trichloride and the chlorosilane by distillation, at a temperature approximately greater than 160° C.

Abstract: The invention relates to a method for producing trichlorosilane by reacting silicon with hydrogen, silicon tetrachloride and, optionally, hydrogen chloride, whereby the silicon is provided in comminuted form, and the silicon is mixed with a catalyst during comminution.

Abstract: The invention relates to a method for removing anhydrous acids and hydrohalogens from trichlorosilane by contacting the trichlorosilane with solid bases. The invention further relates to the use of the trichlorosilane so purified in the production of silane and/or super-pure silicon.

Abstract: The invention relates to a method for producing trichlorosilane by reacting silicon with hydrogen, silicon tetrachloride and optionally, hydrogen chloride in the presence of a catalyst, this catalyst having an average grain size that is less than the average grain size of the silicon used by a factor of 30 to 100.

Abstract: Chlorosilanes are continuously removed from a gas stream in an apparatus in which the gas stream is treated in a first stage with water vapor in the gas phase, and in a second stage with a liquid, aqueous phase.

Abstract: A process is provided for forming a low k fluorine and carbon-containing silicon oxide dielectric material by reacting with an oxidizing agent one or more silanes including one or more organofluoro silanes characterized by the absence of aliphatic C—H bonds. In one embodiment, the process is carried out using a mild oxidizing agent. Also provided is a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material for use in an integrated circuit structure containing silicon atoms bonded to oxygen atoms, silicon atoms bonded to carbon atoms, and carbon atoms bonded to fluorine atoms, where the dielectric material is characterized by the absence of aliphatic C—H bonds and where the dielectric material has a ratio of carbon atoms to silicon atoms of C:Si greater than about 1:3.

Abstract: Molecular dipolar rotors comprising a base, an axle connected to said base and oriented substantially perpendicular to said base, and a rotor portion having an electric dipole moment are provided. The molecular dipolar rotors may be attached to a surface. Arrays of molecular dipolar rotors attached to surfaces are provided. Molecular dipolar rotors are useful in preparation of small devices.

Abstract: A process for producing hexachlorodisilane comprising, condensing an exhaust gas discharged from a reactor for producing polycrystalline silicon from a chlorosilane and hydrogen to separate the hydrogen, distilling the resultant condensate to separate the unreacted chlorosilane and by-product silicon tetrachloride, and then further distilling to recover hexachlorodisilane, wherein tetrachlorodisilane can be recovered together with the hexachlorodisilane, and the hexachlorodisilane and tetrachlorodisilane recovered have a far higher purity than the conventional ones produced from metallic silicon.

Abstract: A process for separating metal chlorides from a suspension of metal chlorides in chlorosilanes, in which the suspension is filtered under pressure in the absence of air and moisture forming a filter cake, which is granulated and passed to a dissolution zone where the metal chlorides are dissolved to form an aqueous metal chloride solution. The invention also relates to a filtration and dissolution apparatus for this process, and to an apparatus for introducing the crude reaction gas into a circulated suspension of metal chlorides in chlorosilanes, thus producing a feedstock for the process.

Abstract: A process for producing silicon tetrafluoride includes reacting at 250° C. or higher elemental silicon with hydrogen fluoride, thereby producing a gas product containing silicon tetrafluoride. This reaction can be conducted such that the gas product contains at least 0.02 volume % of the unreacted hydrogen fluoride. The process may further include bringing the gas product into contact with elemental nickel at a temperature of 600° C. or higher. Alternatively, the process may further include adding at least 0.1 volume % of hydrogen fluoride to the gas product to prepare a gas mixture; and bringing the gas mixture into contact with elemental nickel at a temperature of 400° C. or higher.

Abstract: The method according to the present invention enables to suppress damaging the reaction tubes and the wafer boat made of quarts, when cleaning the reaction vessel after the completion of film forming process for a polysilicon or titanium nitride film, thus the method reduces the running cost. After forming a polysilicon film on the semiconductor wafers, the empty wafer boat is placed in the reaction vessel. The interior atmosphere of the reaction vessel is maintained at temperatures in the range of 700 to 1000° C. A mixed gas prepared by diluting chlorine gas with nitrogen gas is supplied at a predetermined flow rate into the reaction vessel to remove the polysilicon film. A titanium nitride film can also be removed in the same manner.

Abstract: A process for preparing polycrystalline silicon comprising the steps of (A) reacting trichlorosilane with hydrogen thereby forming silicon and an effluent mixture comprising tetrachlorosilane and disilane described by formula HnCl6−nSi2 where n is a value of 0 to 6 and (B) co-feeding the effluent mixture and hydrogen to a reactor at a temperature within a range of about 600° C. to 1200° C. thereby effecting hydrogenation of the tetrachlorosilane and conversion of the disilane to monosilanes.

Abstract: Halogen-substituted silicon compounds are hydrogenated by reaction with hydrogen in a chloroaluminate salt melt as a reaction medium containing a finely divided metal capable of forming interstitial hydrides which are suspended in the melt, the finely divided interstitial metal hydrides being formed in situ in the melt by reduction of a metal halide with an electropositive element as a halogen acceptor I selected from the group consisting of magnesium, calcium and aluminum.

Abstract: Methods for Heating a Fluidized Bed Silicon Deposition Apparatus with the steps of: one or more heaters and entries to the reactor for the gas or gases which can be heated without decomposition separate from one or more heaters and entries for the gas or gases which decompose to form silicon when heated, heating the gas or gases which do not decompose to temperatures between 400-2000 C., more preferably 800-1600 C., heating the gases which do decompose thermally to temperatures less than the temperature at which they decompose, typically 25-400 C., preferably 300-350 C., and alternatively or in combination with the above steps also providing a means for removal of the silicon beads, heating the beads to a temperature between 800-1200 C. and preferably to a temperature between 900-1100 C. and returning the beads to the reactor. Providing localized cooling of the entries for the thermally decomposable gases.

Abstract: A low-viscosity dental material contains a non-settling nanoscale filler. Improvements of the mechanical properties of the dental materials, including the abrasive resistance and the compressive strength are provided. Furthermore, the dental materials have increased resistance to microleakage and have increased bond strengths. The filler forms a stable sol with low-viscosity dental materials and the filler may be prepared by surface treatment of fillers having a primary particle size of from about 1 to about 100 nanometers.

Abstract: A process and an apparatus for treating an exhaust gas, in which a raw gas and high-boiling intermediate products contained in the exhaust gas let out from a CVD system employing a silicon-containing gas is brought into contact with a transition metal such as nickel or a silicide of such transition metals to decompose or convert them into stable halides, followed by detoxication treatment of the harmful components contained in the exhaust gas.

Abstract: Process for preparing trichlorosilane by reacting silicon with silicon tetrachloride, hydrogen and optionally hydrogen chloride using catalysts, where silicon is intensively mixed with the catalyst before the reaction.

Abstract: The present invention relates to an apparatus for the safe filling and emptying of a pressurized vessel charged with flammable and/or aggressive gas. The apparatus features an upper flap combination, an intermediate lock vessel having a flushing apparatus, and a lower flap combination. The present invention also relates to a pressurized reactor which is charged with flammable and/or aggressive gas and is equipped with a filling lock apparatus and an emptying lock apparatus for the simultaneous preparation of tetrachlorosilane, trichlorosilane and hydrogen. In addition, the present invention relates to a special process for filling and emptying such a reactor.

Abstract: A Method for Improving the efficiency of a silicon purification process is by controlling the temperature and composition of the effluent to a feedstock recovery composition and temperature, rapidly quenching the effluent at or near the recovery composition, separating the gases from the liquids, sending the gases to conventional hydrogen recovery and recycle facilities, separating the hydrohalosilanes from silicon tetrahalide, returning the hydrohalosilanes to the inlet of the deposition reactor, using all or some of the silicon tetrahalide to control the composition and temperature of the effluent and separately heating the hydrogen and any silicon tetrahalide returned to the decomposition reactor to a temperature greater than 400 C. and separately injecting them into the decomposition reactor.

Abstract: Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

Abstract: A process for treating NF3 useful as a dry etching gas and cleaning gas in processes for producing LSI, TFT, and solar cell and in an electron photographic processes.

Abstract: A process for separating metal chlorides from a suspension of metal chlorides in chlorosilanes, in which the suspension is filtered under pressure in the absence of air and moisture forming a filter cake, which is granulated and passed to a dissolution zone where the metal chlorides are dissolved to form an aqueous metal chloride solution. The invention also relates to a filtration and dissolution apparatus for this process, and to an apparatus for introducing the crude reaction gas into a circulated suspension of metal chlorides in chlorosilanes, thus producing a feedstock for the process.

Abstract: A process for separating metal chlorides from the hot, gaseous reaction mixture (crude gas) formed in the reaction of technical-grade silicon with hydrogen chloride, in which the crude gas is introduced into a circulated suspension of metal chlorides in chlorosilanes, the temperature of the crude gas is reduced from its introduction temperature to the temperature of the three-phase gas/liquid/solid mixture formed on introduction of the crude gas into the suspension partly by direct cooling resulting from vaporization of chlorosilanes and partly by indirect cooling, part of the resulting suspension of metal chlorides in liquid chlorosilanes is recirculated to the introduction point of the crude gas and the metal chlorides are separated from the other part of the suspension.

Abstract: The invention relates to a process for preparing vinyl chlorosilanes, that includes thermally and non-catalytically reacting chlorosilane with vinyl chloride at a temperature of 550 to 700° C. by flowing the chlorosilane and vinyl chloride through a ring-gap space in a ring-gap reactor to produce a reaction gas; the ring-gap space having a cross-sectional area and a volume; and, after the flowing, further reacting, adiabatically, the reaction gas in a second zone to produce a hot reaction gas that contains vinylchiorosilane; wherein the second zone has a cross-sectional area that is greater than the cross-sectional area of the ring-gap space; and wherein the second zone has a volume that is in a ratio to the volume of the ring-gap space of 0.15:1 to 1.5:1. The invention also provides an apparatus for carrying out the above process.

Abstract: A method for producing fumed silica and a fluorine-containing product from a source of silica in solid form and a solid material containing fluorine, the solid material selected from the group consisting of sodium aluminum tetrafluoride, cryolite, aluminum fluosilicate ammonium bifluoride, sodium aluminum silicofluoride, and sodium fluosilicate. The method comprises the steps of digesting the silica in solid form and the solid material selected from the group consisting of sodium aluminum tetrafluoride, cryolite, aluminum fluosilicate, ammonium bifluoride, sodium aluminum silicofluoride, and sodium flurosilicate in a sulfuric acid digester. The digestion step produces a first gas component comprised of silicon tetrafluoride, hydrogen fluoride and water vapor. The first gas component is removed from the digester.

Abstract: A process of treating spent potliner material from aluminum reduction cells and recovering useful products. In the process of the present invention, spent potliner material is introduced into an acid digester containing, for example, sulfuric acid. As a result of this step, a gas component is produced which includes hydrogen fluoride, silicon tetrafluoride and hydrogen cyanide. Also, a slurry component is produced which includes carbon, a refractory material including silica, alumina, sodium compounds such as sodium sulfate, aluminum compounds such as aluminum sulfate, iron compounds such as iron sulfate, magnesium and calcium compounds such as magnesium and calcium sulfate. The slurry component remains in the digester after the gas component is removed. The gas component is recovered and heated an effective amount to convert or decompose the silicon tetrafluoride to fumed silica, hydrogen cyanide to a remaining gas component including CO.sub.2, H.sub.2 O, and nitrogen oxides, as well as HF gas.

Abstract: Alkylhalosilanes are produced by first fluidizing a metallic silicon powder with an inert gas, preheating the silicon powder at a temperature between 200.degree. C. and a steady reaction temperature while keeping the silicon powder fluidized, adding a copper catalyst to the preheated silicon powder to form a contact mass, and feeding an alkyl halide into the contact mass whereby the alkylhalosilanes are formed by direct synthesis. This process prevents the copper catalyst from being sintered by thermal hysteresis and activates a high catalysis on the contact mass at the start of reaction. The desired dialkyldihalosilane can be produced at a high selectivity.